JPH1083889A - Electroluminescent element and its manufacture - Google Patents
Electroluminescent element and its manufactureInfo
- Publication number
- JPH1083889A JPH1083889A JP8257566A JP25756696A JPH1083889A JP H1083889 A JPH1083889 A JP H1083889A JP 8257566 A JP8257566 A JP 8257566A JP 25756696 A JP25756696 A JP 25756696A JP H1083889 A JPH1083889 A JP H1083889A
- Authority
- JP
- Japan
- Prior art keywords
- cathode layer
- laminated
- layer
- purity
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000007772 electrode material Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 19
- 239000011241 protective layer Substances 0.000 claims description 13
- 230000005525 hole transport Effects 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 5
- 239000012876 carrier material Substances 0.000 abstract 2
- 108091006149 Electron carriers Proteins 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000733 Li alloy Inorganic materials 0.000 description 2
- -1 aluminum chelate complex Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000001989 lithium alloy Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 125000006617 triphenylamine group Chemical group 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- ZMLPKJYZRQZLDA-UHFFFAOYSA-N 1-(2-phenylethenyl)-4-[4-(2-phenylethenyl)phenyl]benzene Chemical group C=1C=CC=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC1=CC=CC=C1 ZMLPKJYZRQZLDA-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、平面光源やディ
スプレイに用いられるＥＬ素子とその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an EL element used for a flat light source or a display and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来、例えば有機ＥＬ（エレクトロルミ
ネッセンス）素子は、図２に示すように、ガラス基板１
に透光性のＩＴＯ膜の陽極２を形成し、その上面にトリ
フェニルアミン誘導体（ＴＰＤ）等のホール輸送材料３
を設け、その上にアルミキレート錯体（Ａｌｑ3）等の
電子輸送材料４を積層している。そしてその上面に、Ａ
ｌ，Ｌｉ，Ａｇ，Ｍｇ，Ｉｎ等の陰極５を形成してい
る。この有機ＥＬ素子は、陽極２と陰極５間に所定の電
圧が印加され、発光を生じるものである。そして、この
有機ＥＬ素子の製造に際しては、ガラス基板１上に電極
材料及びＥＬ材料を真空蒸着により形成している。2. Description of the Related Art Conventionally, for example, an organic EL (electroluminescence) element is, as shown in FIG.
A light-transmissive ITO film anode 2 is formed on the surface, and a hole transport material 3 such as a triphenylamine derivative (TPD) is formed on the upper surface thereof.
And an electron transport material 4 such as an aluminum chelate complex (Alq 3 ) is laminated thereon. And on the upper surface, A
A cathode 5 of 1, Li, Ag, Mg, In or the like is formed. In this organic EL element, a predetermined voltage is applied between the anode 2 and the cathode 5 to emit light. In manufacturing the organic EL element, an electrode material and an EL material are formed on the glass substrate 1 by vacuum deposition.
【０００３】[0003]
【発明が解決しようとする課題】ここで、陰極５は、電
子輸送材料４に電子を供給する電子供与性が高いことが
望まれ、その指標としてはその材料の仕事関数あり、こ
の仕事願数が低いことが要求される。この仕事関数の低
い材料としてはＮａ，Ｌｉ，Ｍｇ，Ｃａなどがあるが、
取り扱いの容易性からＥＬ素子に使用可能な材料は、Ｌ
ｉ，Ｍｇ等に限られている。Here, it is desired that the cathode 5 has a high electron donating property for supplying electrons to the electron transporting material 4, and the index is the work function of the material. Is required to be low. Materials with a low work function include Na, Li, Mg, Ca, etc.
The material that can be used for the EL element is L
i, Mg, etc.
【０００４】しかし、上記従来の技術の陰極５を構成す
る材料であるＬｉ，Ｍｇ等の電子供与性の高い材料、即
ち仕事関数の低い材料は、反応性が高く一般に高純度の
ものが得られにくく、またそれらの合金においても同様
であり、通常９９％程度の純度が限界であった。そし
て、不純物の存在は、ＥＬ素子のダークスポットの原因
となり、純度９９％程度では、ダークスポットの存在面
積が発光面の３０％に達する場合がり、実用上問題とな
っていた。一方、これら以外のＡｌ等の材料は高純度の
ものが得られるが、電子供与性が劣り、ＥＬ素子の発光
効率や寿命が落ちるという問題があった。However, materials having a high electron-donating property, such as Li and Mg, that is, materials having a low work function, such as Li and Mg, which constitute the cathode 5 of the above-mentioned prior art, have high reactivity and generally have high purity. The same is true for these alloys, and the purity of the alloy is usually limited to about 99%. The presence of impurities causes a dark spot in the EL element. At a purity of about 99%, the area where the dark spot exists may reach 30% of the light emitting surface, which is a practical problem. On the other hand, materials other than these, such as Al, can be obtained with high purity, but have a problem in that the electron donating property is inferior, and the luminous efficiency and life of the EL element are reduced.
【０００５】この発明は、上記従来の技術に鑑みてなさ
れたもので、簡単な構成で、発光効率が良く、寿命が長
く、ダークスポットのない均一な発光を可能にするＥＬ
素子とその製造方法を提供することを目的とする。The present invention has been made in view of the above-mentioned conventional technology, and has a simple structure, a high luminous efficiency, a long life, and an EL which enables uniform light emission without dark spots.
An object is to provide an element and a method for manufacturing the element.
【０００６】[0006]
【課題を解決するための手段】この発明は、ガラス等の
透明基板上にＩＴＯ等の透明な電極材料により陽極が形
成され、その透明電極の陽極の上面にホール輸送材料及
び電子輸送材料のＥＬ材料が積層され、さらに上記ＥＬ
材料の表面に、相対的に高純度の第一陰極層が積層さ
れ、さらにその表面に相対的に純度が低いが電子供与性
の高い第二陰極層を積層したＥＬ素子である。さらに、
上記第二陰極層の上に、この第二陰極層を外気と遮断す
る保護層を、金属薄膜または樹脂により形成したもので
ある。According to the present invention, an anode is formed of a transparent electrode material such as ITO on a transparent substrate such as glass, and a hole transporting material and an EL transporting material are formed on the upper surface of the anode of the transparent electrode. The materials are laminated, and the EL
An EL device in which a first cathode layer having a relatively high purity is laminated on a surface of a material, and a second cathode layer having a relatively low purity and a high electron donating property is further laminated on the surface. further,
On the second cathode layer, a protective layer for shielding the second cathode layer from outside air is formed by a metal thin film or a resin.
【０００７】またこの発明は、ガラス等の透明基板上
に、真空蒸着やスパッタリング、その他の真空薄膜形成
技術により、ＩＴＯ等の透明な電極材料の陽極を形成
し、その透明電極の陽極の上面に上記真空薄膜形成技術
によりホール輸送材料及び電子輸送材料のＥＬ材料を積
層し、さらに上記ＥＬ材料の表面に、相対的に高純度の
第一陰極層を上記真空薄膜形成技術によりが積層され、
さらにその表面に相対的に純度が低いが電子供与性の高
い第二陰極層を上記真空薄膜形成技術により積層するＥ
Ｌ素子の製造方法である。さらに、上記第二陰極層の上
に、この第二陰極層を外気と遮断する保護層を上記真空
薄膜形成技術により形成し、その表面に樹脂の保護層を
塗布するものである。Further, according to the present invention, an anode made of a transparent electrode material such as ITO is formed on a transparent substrate made of glass or the like by vacuum evaporation, sputtering, or other vacuum thin film forming techniques, and is formed on the upper surface of the anode of the transparent electrode. An EL material of a hole transport material and an electron transport material is laminated by the vacuum thin film forming technique, and a relatively high-purity first cathode layer is further laminated on the surface of the EL material by the vacuum thin film forming technique.
Further, a second cathode layer having relatively low purity but high electron donating property is laminated on the surface by the above-mentioned vacuum thin film forming technique.
This is a method for manufacturing an L element. Further, a protective layer for blocking the second cathode layer from the outside air is formed on the second cathode layer by the above-mentioned vacuum thin film forming technique, and a resin protective layer is applied to the surface thereof.
【０００８】この発明のＥＬ素子は、陰極として純度の
高い第一陰極層と、電子供与性の高い第二陰極層とを積
層したので、純度の高い第一陰極層によりダークスポッ
トがなく、第一陰極層に第二陰極層の電子供与性の高い
金属原子が拡散若しくはドープし、第一陰極層の電子供
与性が高められ、発光効率が良く、寿命も長いものにす
ることができるものである。In the EL device of the present invention, the first cathode layer having high purity as the cathode and the second cathode layer having high electron donating property are laminated. A metal atom having a high electron-donating property of the second cathode layer is diffused or doped into the one cathode layer, the electron-donating property of the first cathode layer is enhanced, and the luminous efficiency is good and the life can be extended. is there.
【０００９】[0009]
【発明の実施の形態】以下、この発明の実施の形態につ
いて図面を基にして説明する。図１はこの発明のＥＬ素
子の一実施形態を示すもので、この実施形態のＥＬ素子
は、有機薄膜ＥＬ素子であり、図示するように、ガラ
ス、透明樹脂、石英等の透明基板１０の表面に、ＩＴＯ
等の透明な電極である陽極１２が形成されている。陽極
１２の表面には、ＥＬ材料による発光層１４が形成され
ている。そして、発光層１４の表面には、９９．９９９
％以上の純度のＡｌによる第一陰極層１８が２００Å程
度の厚さに形成され、その上面に、Ａｌ−Ｌｉ合金の第
２層の陰極２０が５００Å程度の厚さに形成されてい
る。第二陰極層２０は、純度が９９％、Ｌｉ比率が０．
０５％程度である。なお、第一、第二陰極層１８，２０
は、各々厚さが５０Åから５００Å程度の厚さで適宜変
更可能なものである。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an embodiment of an EL element of the present invention. The EL element of this embodiment is an organic thin-film EL element, and as shown, a surface of a transparent substrate 10 made of glass, transparent resin, quartz or the like. And ITO
The anode 12 is a transparent electrode. A light emitting layer 14 made of an EL material is formed on the surface of the anode 12. Then, 99.999 is provided on the surface of the light emitting layer 14.
A first cathode layer 18 of Al having a purity of at least 200% is formed to a thickness of about 200 °, and a second layer cathode 20 of an Al—Li alloy is formed to a thickness of about 500 ° on the upper surface thereof. The second cathode layer 20 has a purity of 99% and a Li ratio of 0.2.
It is about 05%. The first and second cathode layers 18, 20
Have a thickness of about 50 ° to 500 ° and can be appropriately changed.
【００１０】ＥＬ材料の発光層１４は、母体材料のうち
ホール輸送材料１５としては、トリフェニルアミン誘導
体（ＴＰＤ）、ヒドラゾン誘導体、アリールアミン誘導
体等がある。また、電子輸送材料１６としては、アルミ
キレート錯体（Ａｌｑ3）、ジスチリルビフェニル誘導
体（ＤＰＶＢｉ）、オキサジアゾール誘導体、ビスチリ
ルアントラセン誘導体、ベンゾオキサゾールチオフェン
誘導体、ペリレン類、チアゾール類等を用いる。上記ホ
ール輸送材料１５と電子輸送材料１６の比は、１０：９
０乃至９０：１０の範囲で適宜変更可能である。In the light emitting layer 14 of the EL material, the hole transporting material 15 of the base material includes a triphenylamine derivative (TPD), a hydrazone derivative, an arylamine derivative and the like. As the electron transporting material 16, an aluminum chelate complex (Alq 3 ), a distyrylbiphenyl derivative (DPVBi), an oxadiazole derivative, a bistyrylanthracene derivative, a benzoxazolethiophene derivative, a perylene, a thiazole, or the like is used. The ratio of the hole transport material 15 to the electron transport material 16 is 10: 9
It can be changed as appropriate within the range of 0 to 90:10.
【００１１】第二陰極層２０の上面には、保護層２２が
積層されている。保護層２２は、Ａｇ、Ａｌ等の金属薄
膜により形成され、第一，第二陰極層１８，２０及び発
光層１４を外気から遮断するものである。そして、フェ
ノール、エポキシ等の樹脂や、導電性塗料により保護層
２４を形成する。On the upper surface of the second cathode layer 20, a protective layer 22 is laminated. The protection layer 22 is formed of a metal thin film such as Ag or Al, and shields the first and second cathode layers 18 and 20 and the light emitting layer 14 from the outside air. Then, the protective layer 24 is formed of a resin such as phenol or epoxy or a conductive paint.
【００１２】この実施形態の有機薄膜ＥＬ素子の製造方
法は、先ず基板１０上に一面にＩＴＯ等による陽極１２
を蒸着やフラッシュ蒸着、スパッタリングその他の真空
中の薄膜形成技術により形成する。次に、ＥＬ材料の発
光層１４を、ホール輸送材料１５、電子輸送材料１６の
順に、上記薄膜形成技術の任意の方法により順次形成す
る。ＥＬ材料１４の層の表面には導電性材料１５の層を
一面に、上記真空薄膜形成技術のうちの任意の方法によ
り形成する。この後、第一陰極層１８を蒸着等の上記真
空薄膜形成技術で所定の厚さに形成する。次に第二陰極
層２０を、同様に形成する。In the method of manufacturing an organic thin film EL device according to this embodiment, an anode 12 made of ITO or the like
Is formed by vapor deposition, flash vapor deposition, sputtering or other thin film forming technology in vacuum. Next, the light-emitting layer 14 of the EL material is formed in this order by the hole transporting material 15 and the electron transporting material 16 by an arbitrary method of the thin film forming technique. A layer of the conductive material 15 is formed on the entire surface of the layer of the EL material 14 by any of the above-described vacuum thin film forming techniques. Thereafter, the first cathode layer 18 is formed to a predetermined thickness by the above-described vacuum thin film forming technique such as vapor deposition. Next, the second cathode layer 20 is formed in the same manner.
【００１３】ここで蒸着条件は、例えば、真空度が６×
１０-6Ｔｏｒｒで、ＥＬ材料の場合５０Å／ｓｅｃの蒸
着速度で成膜する。フラッシュ蒸着法は、予め所定の比
率で混合した有機ＥＬ材料を、３００〜６００℃好まし
くは、４００〜５００℃に加熱した蒸着源に落下させ、
有機ＥＬ材料を一気に蒸発させるものである。また、そ
の有機ＥＬ材料を容器中に収容し、急速にその容器を加
熱し、一気に蒸着させるものでも良い。Here, the deposition conditions are, for example, that the degree of vacuum is 6 ×
At 10 -6 Torr, in the case of an EL material, a film is formed at a deposition rate of 50 ° / sec. In the flash vapor deposition method, an organic EL material previously mixed at a predetermined ratio is dropped to a vapor deposition source heated to 300 to 600 ° C., preferably 400 to 500 ° C.,
The organic EL material is evaporated at a stretch. Alternatively, the organic EL material may be housed in a container, and the container may be rapidly heated and vapor-deposited at once.
【００１４】次に、第二陰極層２０の表面に、保護層２
２を形成する。保護層２２の形成は、ＡｌやＡｇを上記
真空薄膜形成技術により形成する。この保護層２２の形
成までを真空炉中で一連に行なうものである。そして、
さらに、電極の取出し部を除いて、樹脂による保護層２
４を塗布により形成しても良い。保護層２２はハンダ付
け性を考慮すると、Ａｇが好ましい。Next, a protective layer 2 is formed on the surface of the second cathode layer 20.
Form 2 The protection layer 22 is formed of Al or Ag by the above-described vacuum thin film forming technique. The steps up to the formation of the protective layer 22 are sequentially performed in a vacuum furnace. And
Further, except for the electrode extraction portion, the protective layer 2 made of resin is used.
4 may be formed by coating. Ag is preferable for the protective layer 22 in consideration of solderability.
【００１５】この実施形態のＥＬ素子は、陰極として純
度の高いＡｌの第一陰極層１８と、電子供与性の高いＡ
Ｌ−Ｌｉ合金の第二陰極層２０とを積層したので、純度
の高い第一陰極層１８により発光時のダークスポットが
なく、しかも第一陰極層１８に第二陰極層２０のＬｉが
拡散若し、第一陰極層１８の電子供与性が高められ、発
光効率が良くなるものである。The EL device of this embodiment has a high purity Al first cathode layer 18 as a cathode and an A
Since the second cathode layer 20 of the L-Li alloy is laminated, there is no dark spot at the time of light emission due to the first cathode layer 18 having high purity, and Li of the second cathode layer 20 is diffused into the first cathode layer 18 by diffusion. In addition, the electron donating property of the first cathode layer 18 is enhanced, and the luminous efficiency is improved.
【００１６】なお、この発明のＥＬ素子の第一陰極層
は、高純度のＡｌ以外に、高純度が得られ発光層に悪影
響を与えないＡｇ，Ｉｎでも良い。また、第二陰極層
は、Ａｉ−Ｌｉ合金の成分比率は適宜変更可能であり、
他のＭｇ等の合金や、その他電子供与性の高い金属材料
単体でも良い。さらに、第二陰極層を形成後、温度を１
００℃程度に保って、拡散を促進することにより、さら
に効率を上げることができる。また、ＥＬ材料も、ホー
ル輸送材料と電子輸送材料を積層したものの他、これら
を混合して蒸着したもの等、適宜選択可能なものであ
り、発光色も任意に選択可能である。The first cathode layer of the EL device of the present invention may be made of Ag or In which has high purity and does not adversely affect the light emitting layer, in addition to high purity Al. In the second cathode layer, the component ratio of the Ai-Li alloy can be appropriately changed,
Other alloys such as Mg and other simple metal materials having a high electron donating property may be used. Further, after forming the second cathode layer, the temperature is set to 1
Efficiency can be further increased by promoting diffusion while maintaining the temperature at about 00 ° C. In addition, the EL material can be appropriately selected, such as a material in which a hole transport material and an electron transport material are laminated, a material in which these materials are mixed and vapor-deposited, and the emission color can be arbitrarily selected.
【００１７】[0017]
【発明の効果】この発明のＥＬ素子とその製造方法は、
陰極として、発光層に純度の高い材料を積層し、その上
に電子供与性の高い材料を積層したのでＥＬ素子に、ダ
ークスポットがなく、しかも発光効率が良く、寿命も長
いものである。According to the present invention, the EL device and the method for manufacturing the same are as follows.
As the cathode, a high-purity material is stacked on the light-emitting layer, and a material having a high electron-donating property is stacked thereon, so that the EL element has no dark spots, has high luminous efficiency, and has a long life.
【図１】この発明の一実施形態のＥＬ素子の断面図であ
る。FIG. 1 is a cross-sectional view of an EL device according to an embodiment of the present invention.
【図２】従来ののＥＬ素子の断面図である。FIG. 2 is a cross-sectional view of a conventional EL element.
１０ 基板 １２ 陽極 １４ 発光層 １５ ホール輸送材料 １６ 電子輸送材料 １８ 第一陰極層 ２０ 第二陰極層 ２２，２４ 保護層 DESCRIPTION OF SYMBOLS 10 Substrate 12 Anode 14 Light emitting layer 15 Hole transport material 16 Electron transport material 18 First cathode layer 20 Second cathode layer 22, 24 Protective layer
Claims (5)
が形成され、その透明な陽極の上面にホール輸送材料及
び電子輸送材料のＥＬ材料が積層され、上記ＥＬ材料の
表面に、相対的に高純度の第一陰極層が積層され、その
表面に相対的に純度が低いが電子供与性の高い第二陰極
層を積層したＥＬ素子。An anode is formed of a transparent electrode material on a transparent substrate, and an EL material of a hole transport material and an electron transport material is laminated on an upper surface of the transparent anode. An EL element in which a high-purity first cathode layer is laminated, and a second cathode layer having relatively low purity but high electron donating property is laminated on the surface thereof.
求項１記載のＥＬ素子。2. The EL device according to claim 1, wherein said EL material is an organic EL material.
を外気と遮断する保護層を形成した請求項１または２記
載のＥＬ素子。3. The EL device according to claim 1, wherein a protective layer for blocking the second cathode layer from outside air is formed on the second cathode layer.
透明な電極材料の陽極を形成し、その透明陽極の上面に
上記真空薄膜形成技術によりＥＬ材料を積層し、さらに
上記ＥＬ材料の表面に、相対的に高純度の第一陰極層を
上記真空薄膜形成技術により積層し、その表面に相対的
に純度が低いが電子供与性の高い第二陰極層を上記真空
薄膜形成技術により積層するＥＬ素子の製造方法。4. An anode made of a transparent electrode material is formed on a transparent substrate by a vacuum thin film forming technique, an EL material is laminated on the transparent anode by the vacuum thin film forming technique, and an EL material is further formed on the surface of the EL material. EL in which a relatively high-purity first cathode layer is laminated by the above-described vacuum thin film forming technique, and a second cathode layer having relatively low purity but high electron donating property is laminated on the surface thereof by the above-described vacuum thin film forming technique. Device manufacturing method.
を外気と遮断する保護層を上記真空薄膜形成技術により
形成し、その表面に樹脂の保護層を塗布する請求項４記
載のＥＬ素子の製造方法。5. A protective layer for blocking said second cathode layer from outside air is formed on said second cathode layer by said vacuum thin film forming technique, and a resin protective layer is applied to the surface thereof. Method for manufacturing an EL element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8257566A JPH1083889A (en) | 1996-09-06 | 1996-09-06 | Electroluminescent element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8257566A JPH1083889A (en) | 1996-09-06 | 1996-09-06 | Electroluminescent element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1083889A true JPH1083889A (en) | 1998-03-31 |
Family
ID=17308058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8257566A Pending JPH1083889A (en) | 1996-09-06 | 1996-09-06 | Electroluminescent element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1083889A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004111324A (en) * | 2002-09-20 | 2004-04-08 | Fuji Photo Film Co Ltd | Light emitting element |
| US7410402B2 (en) | 2002-03-25 | 2008-08-12 | Dai Nippon Printing Co., Ltd. | Electrode for electroluminescence and electroluminescent device using the same |
-
1996
- 1996-09-06 JP JP8257566A patent/JPH1083889A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7410402B2 (en) | 2002-03-25 | 2008-08-12 | Dai Nippon Printing Co., Ltd. | Electrode for electroluminescence and electroluminescent device using the same |
| JP2004111324A (en) * | 2002-09-20 | 2004-04-08 | Fuji Photo Film Co Ltd | Light emitting element |
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