JPH1074795A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the electric characteristic of the grounding wiring of a package and to reduce the manufacturing cost of the wiring by reducing the length of the wiring and, at the same time, to improve the heat radiating property of the wiring by radiating the heat generated form the wiring to a printed board. SOLUTION: ATAEI (tape automated bonding) tape carrying a ground layer 3 connected to a grounding conductor is provided in the device hole l of a base film 4 and a resin sealing hole 28 is provided at the center of the layer 3 for fixing a semiconductor chip 2 and the base film 4. Then a package in which ground wiring 8 is connected to a ground pad electrode 13 is sealed with a resin 6. The inductance of the wiring 8 is reduced and the heat radiating property of the wiring 8 is improved by shorting the length of the wiring 8 by forming the wiring 8 in the chip 2 by cutting the package after heat radiating and grourlding bumps 5 are formed in a hole f6rmed in the cover resist 9 of the ground layer 3 and arranging and sticking each cut package on and to a mounting substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device mounted on a substrate by bumps using a TAB tape and a method of manufacturing the same.

[0002]

2. Description of the Related Art A conventional semiconductor device of this type is disclosed in Japanese Patent Application Laid-Open No. 8-31869 proposed by the present inventors. This semiconductor device, as shown in FIG.
It is manufactured by fixing the semiconductor chip 2 to an insulating base film 4 such as polyimide. Specifically, the base film 4 is provided on both sides in the width direction of the base film 4.
Sprocket hole 15 for conveying and positioning
The base film 4 can be transported in the longitudinal direction by using the sprocket holes 15. An opening for positioning the semiconductor chip 2, that is, a device hole 1 is provided inside the base film 4, and a cut hole 16 is formed outside the device hole 1.

The device hole 1 and the cut hole 16
Land 17 on base film 4 between
Are formed, and are wired to the inner leads 18 electrically connected to the semiconductor chip 2. On the land 17, a ball-shaped bump 10 formed of solder or the like is formed as an external connection electrode member.

As shown by the broken lines in the figure, the peripheral region defined other than the bumps 10 is covered with a cover resist 9 to prevent the inner leads 18 and the like from being contaminated by the cover resist 9. . Note that the semiconductor chip 2 is resin-sealed together with the inner leads 18 at the periphery thereof. Finally, by cutting the base film 4 from the cut hole 16, a semiconductor device including the semiconductor chip 2 and the base film member can be formed.

In the semiconductor device having this configuration, since the bumps 10 on the lands 17 can be directly mounted on the printed circuit board 20, a base film member can be substantially used for the package portion. Therefore, there is an advantage that the cost is lower than that of a semiconductor device including a ceramic package or the like. In addition, since the wiring area of the inner lead 18 can be limited only to the inside of the cut hole 16, it is advantageous for miniaturization.

FIG. 4 shows another conventional example in which heat dissipation is improved. This is because the heat dissipation bumps 25 are formed on the suspension leads 22 suspended by the wiring on the same surface as the inner leads 18 in the device hole 1 to dissipate heat to the printed circuit board 20 side. The heat dissipation was improved by attaching.

[0007]

In the above-described semiconductor device, since the inner leads 18 and the solder bumps 10 are arranged on the same surface, for example, terminals arranged outside the package have long wiring lengths. As a result, electrical characteristics such as inductance (L) are deteriorated. In particular, there is a problem that a malfunction of the ground wiring, in which the speed is increased, may occur unless the influence of noise is reduced by short wiring. For this reason, it is necessary to make the wiring length as short as possible to improve its electrical characteristics. Therefore, for example, there is a method of using a two-metal TAB tape in which metal is provided on the back surface of a base film, connecting ground wiring by through holes, and strengthening the ground to improve electrical characteristics. However, using this two-metal tape increases the cost of the TAB tape,
There is a problem that its practical use is difficult.

An object of the present invention is to provide a semiconductor device which solves such a problem, has an inexpensive configuration, has a short wiring length as much as possible, and has improved electrical characteristics, and a method of manufacturing the same.

[0009]

SUMMARY OF THE INVENTION The present invention is directed to a film carrier tape having a device hole for connecting a semiconductor chip, an inner lead to which an electrode of the semiconductor chip is joined, and an external lead on the same plane as the inner lead. In a semiconductor device using a TAB tape having lands provided for connection, a first grounding wiring is provided inside the device hole on the same plane as the inner lead.
And a pad electrode of the semiconductor chip is connected to the inner lead, and the land and the first metal foil are joined to a mounting board via bumps.

The method of manufacturing a semiconductor device according to the present invention is characterized in that a TA having a ground wire connected to the ground is provided in a device hole of a film carrier tape on which a semiconductor chip is mounted.
Forming a B tape, forming a resin sealing hole at the center of the ground wiring, connecting a ground wiring to a ground pad electrode, injecting resin from the resin sealing hole, and sealing the semiconductor chip with a resin; After forming bumps in the holes formed by opening the cover resist of the ground wiring, the package is cut into packages for each of the semiconductor chips, and this package is bonded to a mounting substrate to form the ground wirings inside the semiconductor chip. It is characterized by having done.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing a semiconductor device according to an embodiment of the present invention, and a sectional view taken along line AA of FIG. In the manufacturing process of the present embodiment, first, a TAB tape having a ground layer 3 connected to a ground line (ground line) is formed inside the device hole 1 of the base film 4. Here, a resin encapsulating hole 28 for fixing the semiconductor chip 2 and the base film 4 and coating the resin 6 for protecting the surface of the semiconductor chip 2 is formed in the center of the ground layer 3.
However, when the semiconductor chip 2 is small, for example, about 5 mmsq, if the resin is injected from the opening of the inner lead 18 in the device hole 1, the ground layer 3 is formed by capillary action.
Since the resin 6 can be injected between the semiconductor chip 2 and the semiconductor chip 2, the sealing hole 28 may not be required.

Next, the ground wiring 8 is connected to the ground pad electrode 13 and resin sealing is performed with the resin 6. With such a configuration, since the ground wiring is included in the semiconductor chip 2, the wiring length can be shortened, and the inductance of the line can be reduced. When the resin 6 cures, the ground layer 3 may be slightly bent if the ground layer 3 is made of only a metal foil. In this case, a reinforcing resist 29 is preferably formed in advance under the metal foil. If the resist 29 is the same as the resist formed on the upper surface of the ground layer 3, the thermal expansion can be balanced.

Next, a cover resist 9 is formed on the ground layer 3.
Heat radiation and ground bumps 5
To form At this time, bump 1 outside device hole 1
It can be formed simultaneously with 0. Here, when the package is completed without forming the heat radiation and ground bumps 5 and mounted on a printed circuit board, a structure in which a conductive heat-radiating adhesive resin is formed between the ground layer 3 and the printed circuit board may be used. . Specifically, an adhesive resin is dispensed on the printed circuit board, and then the package is placed thereon and reflowed for joining.

Here, if the reinforcing resist 29 described above is used, it is easy to independently form a pattern connected to the inner lead 18 on the metal foil of the ground layer 3, so that all the internal lands of the ground layer 3 are grounded. There is no need to wire. That is, land 1 outside device hole 1
7, the ground, power and signal lines can also be independently routed on the ground layer 3 inside the device hole 1.
The degree of freedom is increased and optimization is achieved.

The package thus formed can be manufactured at low cost while improving the electrical characteristics. By mounting this package on a mounting substrate, there is also a feature that heat generated from the semiconductor chip 2 can be more effectively radiated to the printed circuit board side.

FIG. 2 is a plan view of a second embodiment of the present invention and sectional views taken along lines BB, CC, and DD. In the present embodiment, as shown in FIG.
The ground layer 11 is also formed on the outer peripheral portion of the land 17 outside, and is connected to the ground layer 3 inside the device hole 1. Further, the ground layer 11 outside the device hole 1 has a structure in which the ground layer 11 is entirely passed between wirings extending to the inner leads 18. With this structure, it was confirmed by experiments that the inductance of the wiring could be remarkably reduced, and this was reduced to half or less. For example, 40m
msn package, up to 25nH with conventional structure
However, in the present embodiment, it was possible to reduce the maximum to 7 nH.

As shown in FIG. 2B, the base film 4 is left under the ground layer 3 inside the device hole 1, and the semiconductor chip 2 is attached to the adhesive layer 12 provided thereunder.
May be bonded so that only the inner leads 18 are coated with the resin 6. In this structure, the resin 6 is connected to the ground layer 3
Since there is no need to implant from inside, stable flatness can be obtained.

[0018]

As described above, according to the present invention, the length of the ground wiring can be shortened, so that its electric characteristics can be improved, and it can be manufactured at a lower cost than a conventional package. In addition, since heat can be radiated to the printed circuit board, heat radiation can be significantly improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing a first embodiment of the present invention and a cross-sectional view taken along the line AA of FIG.

FIG. 2 is a plan view showing a second embodiment of the present invention and a cross-sectional view taken along the lines BB, CC, and DD.

FIG. 3 is a plan view illustrating a conventional semiconductor device and a cross-sectional view taken along the line AA of FIG.

FIG. 4 is a sectional view and a plan view illustrating another conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Device hole 2 Semiconductor chip 3 Internal ground layer (ground wiring) 4 Base film 5 Bump (for heat radiation and grounding) 6 Resin 7 Adhesive material 8 Ground wiring 9 Cover resist 10 Bump 11 External ground layer (ground wiring) 12 Adhesive layer 13 Pad electrode 14 Cover resist coating line 15 Sprocket hole 16 Cut hole 17 Land 18 Inner lead 19 OLB pad 20 Printed circuit board 21 Heat sink 22 Suspended lead 23 Heat dissipation adhesive 24 Heat sink 25 Heat dissipation bump 26 Heat dissipation OLB pad 27 Through hole 28 Resin sealing hole 29 Reinforcement resist

Claims (4)

[Claims] 1. A film carrier tape having a device hole for connecting a semiconductor chip, a TAB having an inner lead to which an electrode of the semiconductor chip is joined and a land provided for external connection on the same plane as the inner lead. In a semiconductor device using a tape, a first metal foil serving as a ground wiring is provided on the same plane as the inner lead inside the device hole, and a pad electrode of the semiconductor chip is connected to the inner lead; A semiconductor device, wherein the land and the first metal foil are joined to a mounting board via bumps. 2. The semiconductor device according to claim 1, wherein the first metal foil inside the device hole and the substrate on which the semiconductor chip is mounted are connected by a conductive member. 3. A ground wiring second metal foil is formed around the land, and the second metal foil is wired so as to be connected to the metal foil inside the device hole.
13. The semiconductor device according to claim 1. 4. A TAB tape having a ground wire connected to the ground is formed in a device hole of a film carrier tape on which a semiconductor chip is mounted, a resin sealing hole is formed in the center of the ground wire, and a ground pad electrode is formed. After connecting a ground wiring and injecting a resin from the resin sealing hole to seal the semiconductor chip with a resin and forming a bump in the hole where the cover resist of the ground wiring is opened, a package for each of the semiconductor chips is formed. And bonding the package to a mounting substrate to form the ground wiring inside the semiconductor chip.