JPH1065488A - Surface acoustic wave substrate - Google Patents
Surface acoustic wave substrateInfo
- Publication number
- JPH1065488A JPH1065488A JP25077796A JP25077796A JPH1065488A JP H1065488 A JPH1065488 A JP H1065488A JP 25077796 A JP25077796 A JP 25077796A JP 25077796 A JP25077796 A JP 25077796A JP H1065488 A JPH1065488 A JP H1065488A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- acoustic wave
- surface acoustic
- substrates
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【産業上の利用分野】 本特許はポタジュームナイオベ
ート単結晶及び薄膜を用いた大きな電気機械結合係数を
もつ弾性表面波基板、及び擬似弾性表面波基板、及び弾
性波変換器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave substrate having a large electromechanical coupling coefficient, a pseudo surface acoustic wave substrate, and a surface acoustic wave converter using a single crystal and a thin film of potassium niobate.
【従来技術】 圧電性の基板表面にインターディジタル
変換器を用いて弾性表面波を励振・受信するデバイスで
は、大きな電気機械結合係数の基板が要求されている。
また、圧電性単結晶、及び圧電性薄膜を用いた弾性波変
換器では、大きな電気機械結合係数をもつ変換器が要求
されている。2. Description of the Related Art In a device for exciting and receiving a surface acoustic wave by using an interdigital converter on a piezoelectric substrate surface, a substrate having a large electromechanical coupling coefficient is required.
Further, in an elastic wave converter using a piezoelectric single crystal and a piezoelectric thin film, a converter having a large electromechanical coupling coefficient is required.
【発明が解決しようとする課題】 これまでは、大きな
圧電定数をもつニオブ酸リチュウム単結晶が用いられて
いるが、更に大きな圧電定数をもつ単結晶、及び薄膜が
得られるならば、高性能機能素子が得られる。Until now, a single crystal of lithium niobate having a large piezoelectric constant has been used. However, if a single crystal having a larger piezoelectric constant and a thin film can be obtained, a high performance function can be obtained. An element is obtained.
【課題を解決するための手段】 本特許では、ニオブ酸
リチュウム単結晶より大きな圧電定数をもつポタジュー
ムナイオベート（ＫＮｂＯ３）単結晶、及び薄膜を用い
た弾性表面波基板、及び弾性波変換器に関するものであ
り、高性能の弾性表面波機能素子、及び弾性波機能素子
を得ること目的としている。。また、ポタジュームナイ
オベート単結晶上を伝搬する擬似弾性表面波を用いるこ
とにより、更に大きな電気機械結合係数の基板が得られ
ることに関する特許である。In this patent, a surface acoustic wave substrate using a single crystal of potassium niobate (KNbO 3 ) having a larger piezoelectric constant than a single crystal of lithium niobate, and a thin film, and an elastic wave converter It is an object of the present invention to obtain a high-performance surface acoustic wave device and a high-performance surface acoustic wave device. . Further, it is a patent relating to obtaining a substrate having a larger electromechanical coupling coefficient by using a pseudo-surface acoustic wave propagating on a potassium niobate single crystal.
【実施例１】ポタジュームナイオベート（ＫＮｂＯ３）
単結晶を用いた弾性表面波基板、及び擬似弾性表面波基
板、及びこの単結晶を用いた圧電性弾性波変換器、及び
これらの基板、及び変換器を用いた電子装置が、実施例
の１である。[Example 1] Potassium juice Muna Io-Bate (KNbO 3)
A surface acoustic wave substrate and a pseudo surface acoustic wave substrate using a single crystal, a piezoelectric elastic wave converter using this single crystal, and an electronic device using these substrates and the converter are described in Example 1. It is.
【実施例２】特許請求の範囲第１項において、ポタジュ
ームナイオベート（ＫＮｂＯ３）単結晶の回転Ｙカット
Ｘ伝搬弾性表面波基板において、ポタジュームナイオベ
ート（ＫＮｂＯ３）単結晶のＹ−面を０度カット面とし
て、０度から１８０度迄の範囲のカット面の弾性表面波
基板、及び伝搬方向がＸ軸から±２０度の範囲にある弾
性表面波基板及びこの基板を用いた電子装置が実施例の
２である。In Example 2 claimed paragraph 1 range, Y- surface of the rotating Y-cut X-propagation SAW substrate of Potassium jeux Muna Io pyruvate (KNbO 3) single crystal, Potassium jeux Muna Io pyruvate (KNbO 3) single crystal A surface acoustic wave substrate having a cut surface in the range of 0 to 180 degrees, a surface acoustic wave substrate having a propagation direction in a range of ± 20 degrees from the X axis, and an electronic device using the substrate. Is the second embodiment.
【実施例３】特許請求の範囲第１項、第２項において、
これらの基板上に作製された短絡或いは開放型の浮き電
極をもつ一方向性弾性表面波電極をもつ基板或いはグル
ープ型の一方向性弾性表面波電極をもつ基板、及びこの
基板を用いた電子装置が、実施例の３である。[Embodiment 3] In claims 1 and 2,
A substrate having a unidirectional surface acoustic wave electrode having a short-circuited or open-type floating electrode formed on these substrates or a substrate having a group-type unidirectional surface acoustic wave electrode, and an electronic device using the substrate Is the third embodiment.
【実施例４】特許請求の範囲第１項、第２項、第３項に
おいて、ポタジュームナイオベート基板上に作製された
半導体薄膜をもつ弾性表面波基板、及び擬似弾性表面波
基板、及びこれらの基板を用いた電子装置が実施例の４
である。Embodiment 4 In the first, second and third claims, a surface acoustic wave substrate and a pseudo surface acoustic wave substrate having a semiconductor thin film formed on a potassium niobate substrate are disclosed. The electronic device using the substrate of Example 4
It is.
【実施例５】基板上に作製されたポタジュームナイオベ
ート（ＫＮｂＯ３）圧電性薄膜を用いた弾性表面波基
板、及び擬似弾性表面波基板、及びこの薄膜を用いた圧
電性弾性波変換器、及びこれらの基板、及び変換器を用
いた用いた電子装置が実施例の５である。Embodiment 5 A surface acoustic wave substrate using a potadium niobate (KNbO 3 ) piezoelectric thin film manufactured on a substrate, a pseudo-surface acoustic wave substrate, and a piezoelectric elastic wave converter using this thin film, Embodiment 5 and an electronic device using these substrates and a converter are Embodiment 5.
【実施例６】特許請求の範囲第５項において、基板とし
て、サファイヤ、水晶、熔融石英、シリコン半導体、Ｉ
ｎＰ，ＩｎＡｓ，ＩｎＳｂを用いた弾性表面波基板、擬
似弾性表面波基板、及びポタジュームナイオベート薄膜
とこれらの基板との間に薄膜をもつ弾性表面波基板、及
び擬似弾性表面波基板、及びこれらの基板を用いた電子
装置が実施例の６である。[Embodiment 6] In claim 5, sapphire, quartz, fused quartz, silicon semiconductor, I
A surface acoustic wave substrate using nP, InAs, InSb, a pseudo surface acoustic wave substrate, a surface acoustic wave substrate having a potadium niobate thin film and a thin film between these substrates, a pseudo surface acoustic wave substrate, and the like An electronic device using the substrate of Example 6 is Example 6.
【実施例７】特許請求の薄膜第１項から第６項におい
て、これらの基板を用いた非線形機能素子、及び弾性表
面波コンボルバ、及びこれらの基板を用いた電子装置が
実施例の７である。Seventh Embodiment In the first to sixth thin films of the present invention, a non-linear functional element and a surface acoustic wave convolver using these substrates, and an electronic device using these substrates are the seventh embodiment. .
【実施例８】特許請求の範囲第１項から第５項におい
て、これらの基板に熔融石英膜を付着させた弾性表面波
基板、及び擬似弾性表面波基板、及びこれらの基板を用
いた電子装置が実施例の８である。ポタジュームナイオ
ベート（ＫＮｂＯ３単結晶の回転ＹカットＸ伝搬弾性表
面波基板において、ポタジュームナイオベート（ＫＮｂ
Ｏ３）単結晶のＹ−面を０度カット面として、６０度回
転した面上Ｘ−軸伝搬の弾性表面波の基板表面を開放、
及び基板表面を短絡した場合の深さ方向の振幅特性を図
１及び図２に示す。図から深さ１．５波長以内に振幅が
集中した弾性表面波になっていることがが判る。ポタジ
ュームナイオベート（ＫＮｂＯ３）単結晶の回転Ｙカッ
トＸ伝搬弾性表面波基板において、ポタジュームナイオ
ベート（ＫＮｂＯ３）単結晶のＹ−面を０度カット面と
して、０度面から１８０度面まで回転した、Ｘ−軸伝搬
の弾性表面波の表面開放の場合の伝搬速度Ｖｆ、表面短
絡の場合の伝搬速度Ｖｓを図３に示す。また、図３から
計算される電気機械結合係数Ｋ２（＝２（Ｖｆ−Ｖｓ）
／Ｖｆ）を図４にに示す。図４から非常に大きな電気機
械結合係数が得られることが判る。Eighth Embodiment In the first to fifth embodiments, a surface acoustic wave substrate having a fused quartz film adhered to these substrates, a pseudo surface acoustic wave substrate, and an electronic device using these substrates Is Example 8 of the present invention. Potadium niobate (KNbO 3 single crystal in a rotating Y-cut X-propagating surface acoustic wave substrate, potadium niobate (KNbO 3
O 3 ) With the Y-plane of the single crystal as the 0-degree cut plane, the substrate surface of the surface acoustic wave propagated in the X-axis direction on the plane rotated by 60 degrees is opened.
FIGS. 1 and 2 show amplitude characteristics in the depth direction when the substrate surface is short-circuited. From the figure, it can be seen that the surface acoustic wave has an amplitude concentrated within a depth of 1.5 wavelength. In rotated Y-cut X-propagation SAW substrate of Potassium jeux Muna Io pyruvate (KNbO 3) single crystal, a Y- plane of Potassium jeux Muna Io pyruvate (KNbO 3) single crystal as the 0-degree cut face, 180 ° surface from 0 ° plane It rotated to show the propagation velocity V f when the surface opening of the surface acoustic wave X- axis propagation, the propagation velocity V s of the case of the surface shorted in FIG. Further, the electromechanical coupling coefficient K 2 calculated from FIG. 3 (= 2 (V f -V s)
/ V f ) is shown in FIG. FIG. 4 shows that a very large electromechanical coupling coefficient can be obtained.
【発明の効果】 非常にに大きな圧電性をもつポタジュ
ームナイオベートを弾性表面波基板として用いることに
より、効率の良い弾性表面波変換器が得られると共に、
帯域の広いフィルタが得られる。また、大きな非線形を
もつ基板であることから、効率の良いコンボルバが得ら
れる。By using potadium niobate having a very large piezoelectricity as a surface acoustic wave substrate, an efficient surface acoustic wave converter can be obtained,
A wide band filter can be obtained. Further, since the substrate has a large nonlinearity, an efficient convolver can be obtained.
【図１】回転Ｙ板の６０度カット面、Ｘ−軸方向伝搬基
板の表面開放の場合の弾性表面波の深さ方向の振幅分布
を示す図である。FIG. 1 is a diagram showing the amplitude distribution in the depth direction of a surface acoustic wave when a 60-degree cut surface of a rotating Y plate and a surface of an X-axis direction propagation substrate are open.
【図２】回転Ｙ板の６０度カット面、Ｘ−軸方向伝搬基
板の表面短絡の場合の弾性表面波の深さ方向の振幅分布
を示す図である。FIG. 2 is a diagram showing the amplitude distribution in the depth direction of surface acoustic waves in the case of a 60-degree cut surface of a rotating Y plate and a surface short circuit of an X-axis direction propagation substrate.
【図３】回転Ｙ板、Ｘ−軸伝搬の弾性表面波の伝搬速度
を示す図である。FIG. 3 is a diagram showing a propagation speed of a surface acoustic wave propagated on a rotating Y plate and X-axis.
【図４】回転Ｙ板、Ｘ−軸伝搬の弾性表面波の電気機械
結合係数を示す図である。FIG. 4 is a diagram showing an electromechanical coupling coefficient of a surface acoustic wave propagated on a rotating Y plate and X-axis.
１…波長で規格化した深さ方向、２…振幅分布、３…波
長で規格化した深さ方向、４…振幅分布、５…回転Ｙ板
のＹカット面から１８０度までのカット面の角度、６…
伝搬速度、７…表面短絡の速度、８表面開放の速度、９
…回転Ｙ板のＹカット面から１８０度まで回転した場合
のカット面の角度、１０…電気機械結合係数、1 ... depth direction normalized by wavelength, 2 ... amplitude distribution, 3 ... depth direction normalized by wavelength, 4 ... amplitude distribution, 5 ... angle of the cut surface from the Y cut surface of the rotating Y plate to 180 degrees. , 6 ...
Propagation speed, 7: speed of surface short circuit, 8 speed of surface opening, 9
... the angle of the cut surface when rotated from the Y-cut surface of the rotating Y-plate to 180 degrees, 10 ... electromechanical coupling coefficient,
Claims (8)
単結晶を用いた弾性表面波基板、及び擬似弾性表面波基
板、及びこの単結晶を用いた圧電性変換器、及びこれら
の基板、及び変換器を用いた用いた電子装置。1. Potadium niobate (KNbO 3 )
A surface acoustic wave substrate and a pseudo surface acoustic wave substrate using a single crystal, a piezoelectric transducer using the single crystal, and an electronic device using these substrates and the transducer.
ームナイオベート（ＫＮｂＯ３）単結晶の回転Ｙカット
Ｘ伝搬弾性表面波基板において、ポタジュームナイオベ
ート（ＫＮｂＯ３）単結晶のＹ−面を０度カット面とし
て、０度から１８０度迄の範囲のカット面のＸ−軸伝搬
の弾性表面波基板、及び伝搬方向がＸ軸から±２０度の
範囲にある弾性表面波基板及びこの基板を用いた電子装
置。2. A range first term of the claims, Y- surface of the rotating Y-cut X-propagation SAW substrate of Potassium jeux Muna Io pyruvate (KNbO 3) single crystal, Potassium jeux Muna Io pyruvate (KNbO 3) single crystal Is a 0-degree cut plane, a surface acoustic wave substrate of X-axis propagation in a cut plane in the range of 0 to 180 degrees, a surface acoustic wave substrate having a propagation direction in a range of ± 20 degrees from the X axis, and this substrate Electronic device using.
これらの基板上に作製された短絡或いは開放型の浮き電
極をもつ一方向性弾性表面波電極をもつ基板或いはグル
ープ型の一方向性弾性表面波電極をもつ基板、及びこの
基板を用いた電子装置。3. In Claims 1 and 2,
A substrate having a unidirectional surface acoustic wave electrode having a short-circuited or open-type floating electrode formed on these substrates or a substrate having a group-type unidirectional surface acoustic wave electrode, and an electronic device using the substrate .
おいて、ポタジュームナイオベート基板上に作製された
半導体薄膜をもつ弾性表面波基板、及び擬似弾性表面波
基板、及びこれらの基板を用いた電子装置。4. A surface acoustic wave substrate having a semiconductor thin film formed on a potadium niobate substrate, a quasi-surface acoustic wave substrate, and the like. Electronic device using a substrate.
ート（ＫＮｂＯ３）圧電性薄膜を用いた弾性表面波基板
及び擬似弾性表面波基板、及びこの薄膜を用いた圧電性
弾性波変換器、及びこれらの基板、及び変換器を用いた
電子装置。5. A surface acoustic wave substrate and a pseudo-surface acoustic wave substrate using a potadium niobate (KNbO 3 ) piezoelectric thin film formed on a substrate, a piezoelectric elastic wave converter using the thin film, and Electronic devices using these substrates and converters.
て、サファイヤ、水晶、熔融石英、シリコン半導体、Ｉ
ｎＰ，ＩｎＡｓ，ＩｎＳｂを用いた弾性表面波基板、擬
似弾性表面波基板、及びポタジュームナイオベート薄膜
とこれらの基板との間に薄膜をもつ弾性表面波基板、及
び擬似弾性表面波基板、及びこれらの基板を用いた電子
装置。6. A semiconductor device according to claim 5, wherein said substrate is sapphire, quartz, fused quartz, silicon semiconductor,
A surface acoustic wave substrate using nP, InAs, InSb, a pseudo surface acoustic wave substrate, a surface acoustic wave substrate having a potadium niobate thin film and a thin film between these substrates, a pseudo surface acoustic wave substrate, and the like Electronic device using a substrate.
て、これらの基板を用いた非線形機能素子、及び弾性表
面波コンボルバ、及びこれらの基板を用いた電子装置。7. A nonlinear functional element and a surface acoustic wave convolver using these substrates according to any one of claims 1 to 6, and an electronic device using these substrates.
て、これらの基板に熔融石英膜を付着させた弾性表面波
基板、及び擬似弾性表面波基板、及びこれらの基板を用
いた電子装置。8. A surface acoustic wave substrate having a fused quartz film adhered to these substrates, a pseudo surface acoustic wave substrate, and an electronic device using these substrates according to claims 1 to 5. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25077796A JP3735759B2 (en) | 1996-08-17 | 1996-08-17 | Surface acoustic wave substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25077796A JP3735759B2 (en) | 1996-08-17 | 1996-08-17 | Surface acoustic wave substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1065488A true JPH1065488A (en) | 1998-03-06 |
| JP3735759B2 JP3735759B2 (en) | 2006-01-18 |
Family
ID=17212896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25077796A Expired - Fee Related JP3735759B2 (en) | 1996-08-17 | 1996-08-17 | Surface acoustic wave substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3735759B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000278084A (en) * | 1999-03-24 | 2000-10-06 | Yamaha Corp | Surface acoustic wave element |
| US6538359B1 (en) | 1999-03-24 | 2003-03-25 | Yamaha Corporation | Surface acoustic wave device |
| US6720846B2 (en) | 2001-03-21 | 2004-04-13 | Seiko Epson Corporation | Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus |
| EP1708289A2 (en) | 2005-03-29 | 2006-10-04 | Seiko Epson Corporation | Piezoelectric film laminate and method of manufacturing the same, surface acoustic wave device, frequency filter, oscillator, electronic circuit, and electronic instrument |
| US7258742B2 (en) | 2003-03-26 | 2007-08-21 | Seiko Epson Corporation | Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
| US7482736B2 (en) | 2005-12-06 | 2009-01-27 | Seiko Epson Corporation | Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator |
| JP2009038602A (en) * | 2007-08-01 | 2009-02-19 | Fujitsu Media Devices Products Kk | Surface acoustic wave device and surface acoustic wave filter |
-
1996
- 1996-08-17 JP JP25077796A patent/JP3735759B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000278084A (en) * | 1999-03-24 | 2000-10-06 | Yamaha Corp | Surface acoustic wave element |
| US6538359B1 (en) | 1999-03-24 | 2003-03-25 | Yamaha Corporation | Surface acoustic wave device |
| US6720846B2 (en) | 2001-03-21 | 2004-04-13 | Seiko Epson Corporation | Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus |
| US7258742B2 (en) | 2003-03-26 | 2007-08-21 | Seiko Epson Corporation | Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
| EP1708289A2 (en) | 2005-03-29 | 2006-10-04 | Seiko Epson Corporation | Piezoelectric film laminate and method of manufacturing the same, surface acoustic wave device, frequency filter, oscillator, electronic circuit, and electronic instrument |
| US7601387B2 (en) | 2005-03-29 | 2009-10-13 | Seiko Epson Corporation | Piezoelectric film laminate and method of manufacturing the same |
| US7482736B2 (en) | 2005-12-06 | 2009-01-27 | Seiko Epson Corporation | Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator |
| US9148116B2 (en) | 2005-12-06 | 2015-09-29 | Seiko Epson Corporation | Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator |
| US9431597B2 (en) | 2005-12-06 | 2016-08-30 | Seiko Epson Corporation | Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator |
| JP2009038602A (en) * | 2007-08-01 | 2009-02-19 | Fujitsu Media Devices Products Kk | Surface acoustic wave device and surface acoustic wave filter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3735759B2 (en) | 2006-01-18 |
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