JPH1064780A - Electron beam exposuring device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance a through put by constituting of a blanking aperture having a first blanker for main exposure and a second blanker for auxiliary exposure with a defocus mechanism and a controlling circuit which delays a lithography signal impressing the first blanker and impresses the second blanker by inverting the signal. SOLUTION: A blanking aperture 31 has a conductive substrate 32 made of silicone which includes p type or n type impurities, blankers 33-35 are formed at the upper part, a blanker 36 is formed at the lower part and the blankers 33-36 are so allayed as to be the same direction as a deflection direction by a deflector. By the blanking aperture 31 electron beams which pass through openings 33c-35c of the blankers 33-35 are practically just focused EB resist on testing material and on the other hand electron beams which pass through an opening 36c of the blanker 36 are so provided at the position where these are defocused on the EB resist.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an electron beam exposure apparatus, and more particularly, to an electron beam exposure apparatus for performing auxiliary exposure for preventing a decrease in pattern accuracy caused by a proximity effect.

[0002]

2. Description of the Related Art At present, an optical transfer technique using ultraviolet rays is used to form various patterns constituting a semiconductor device on a wafer. As the original for exposure,
A mask is used, or a reticle whose original drawing is magnified 4 to 5 times is used. When producing a mask or a reticle, a dry plate is first produced. The dry plate is obtained by forming a light-shielding metal film on a glass substrate by sprinkling or vapor deposition, applying a resist for an electron beam on the metal film, and further baking the resist. Then, the resist on the dry plate is selectively irradiated with an electron beam,
Then, after developing the resist, the metal film is etched and patterned using the resist as a mask. After a process such as resist stripping, a metal film pattern left on a glass substrate is used as a mask or a reticle.

Irradiation of a resist with an electron beam is performed using an electron beam exposure apparatus. However, a problem during exposure is that electrons incident on a dry plate are scattered and spread in a glass substrate or a resist. This is a phenomenon called “proximity effect”. This is because the overlap due to electron scattering in a region with a high pattern density increases more than in a region with a low pattern density, resulting in an increase in the effective irradiation amount in a region with a high pattern density. is there. The scattering by the proximity effect includes so-called forward scattering in which light is scattered in the resist, and so-called backward scattering in which light transmitted through the resist is reflected and scattered on the surface of the workpiece.

For example, the charged particles of the irradiation pattern P1 radiated in a rectangular shape shown in FIG. 9A spread to the periphery of the irradiation pattern P1 due to the proximity effect as shown in FIG. In the area A where the density is small, the electrons spread from the adjacent irradiation pattern P1 are added to each other between the irradiation patterns P1 to increase the amount of electron irradiation around the irradiation pattern P1. As a result, the irradiation energy of the electron beam has a profile as shown by the broken line in FIG. 9B, and the electron irradiation pattern P1 becomes substantially thick. On the other hand, the area B where the irradiation pattern P1 is sparse
Since the influence of electron scattering between the irradiation patterns P1 is small, the width of the irradiation pattern P1 does not substantially increase.

[0005] One method of correcting the influence of such a proximity effect is a method called a "ghost (GHOST) exposure method". This ghost exposure method performs "main exposure" for irradiating the irradiation pattern P1 with electrons, and furthermore, before or after the main exposure, a region other than the irradiation pattern P1 has a dose of 30 to 40% of the main exposure. This is an exposure method for performing “auxiliary exposure” of irradiating an electron beam with a certain amount of light.

According to the auxiliary exposure, as shown in a hatched area in FIG.
In the vicinity of the irradiation pattern P1, the electrons are also irradiated with a small dose, but as shown in FIG. 10B, the electron dose in the sparse region B due to the electron scattering is larger than that in the dense region A. As shown in FIG. 10C, the main point of the proximity effect correction method is that the background energy of the main exposure is kept constant and the desired pattern size becomes uniform.

Such a ghost exposure is described in the paper "Proxim
ity effect correction for electron beam lithograph
y by equalization of background dose ", G. Owen and
P. Rissman, J. Appl. Phys. 54,3573 (1983), and according to this paper, the following two equations (1) and (2) hold. Q _c = Q _e × η _e × (1 + η _e ) ^-1 (1) d _C = 2σ _b × (1 + η _e ) (2) where η _e is accumulated in the resist by the backscattered electrons. that the ratio between the energy and the energy accumulated in the resist during by forward scattering electrons, Q _e is the pattern exposure dose, Q _c is the dose giving onto the pattern reverse image for proximity effect correction, sigma _b are rear 1 / e of the energy stored in the resist during due to scattered electrons is the peak value (e: Bulerl constant) to become the radius, d _c is the agape the beam radius at the time of exposure of the reverse image for correction.

Incidentally, as an example in the above-mentioned paper, η _{e
= 0.78, Q c / Q e} = 0.48, d c = 3.2μm
Is required. Such exposure is performed using, for example, an electron beam exposure apparatus as shown in FIG. In a drawing unit 1 of the electron beam exposure apparatus, an electron beam (charged particles) emitted from an electron gun having a cathode 2, a grid 3, and an anode 4 is shaped by an aperture array 5, and further a blanker 6, a reduction lens 7 The sample on the XY stage 10 is irradiated through the objective aperture 8 and the objective lens 9. The trajectory of the electron beam shaped by the aperture array 5 is deflected by the change in the electric field in the blanker 6, and selection is made as to whether or not the electron beam passes through the opening of the objective aperture 8. The electron beam passing through the opening of the objective aperture 8 is scanned over the sample W by controlling the electric field of the deflector 11. Furthermore, the defocus of the auxiliary exposure is
It is caused by the objective lens 9.

The data processing unit 1 of the electron beam exposure apparatus
2, the exposure data is stored on a magnetic disk 13 and a central processing unit (CPU) 14 at the time of exposure.
Thus, the data is input to the buffer memory 15, the stage control circuit 16, and the electron optical system control circuit 19. The exposure data taken into the buffer memory 15 is developed into a bit map by a bit map developing circuit 17. The bitmap development circuit 17 controls the bunraka 6 based on the bitmap to instruct whether or not to irradiate the sample W with the electron beam. Further, the scanning of the electron beam on the sample W based on the exposure data is performed by the deflection of the electron beam by the deflection control circuit 18 to which the drawing data is input from the buffer memory 15, while the irradiation area of the electron beam is changed. Is performed by moving the XY stage 10 controlled by the stage control circuit 16.

The electron emission control of the electron gun, the control of the aperture of the reduction lens 7, and the control of the aperture of the objective lens 9 are performed by C
It is controlled by an electronic optical system control circuit 19 connected to the PU 14.

[0011]

Conventionally, in order to obtain a beam energy distribution at the time of the above-mentioned auxiliary exposure using the above-mentioned electron beam exposure apparatus, the electron beam is radiated out of focus. Was. However, the beam deflection characteristics are generally affected when the electron beam is scattered.
The main exposure and the auxiliary exposure must be performed separately, and it is necessary to reset the apparatus parameters every time the main exposure and the auxiliary exposure are switched. In addition, since the auxiliary exposure is performed before or after the main exposure is completed, the XY stage also needs to be moved twice. When the auxiliary exposure is performed, the processing time is about twice as long as that of the main exposure. Has declined.

The present invention has been made in view of such a problem, and an object of the present invention is to provide an electron beam exposure apparatus which suppresses a decrease in throughput due to auxiliary exposure.

[0013]

[Means for Solving the Problems]

(Means) As shown in FIGS. 1 and 2,
In an electron beam exposure apparatus having a blanking aperture, a first blanker 33 to 35 for main exposure and a second blanker 36 for auxiliary exposure having a defocus mechanism are provided.
And a control circuit 45 for delaying and inverting the drawing signal applied to the first blankers 33 to 35 and applying the delayed and inverted drawing signals to the second blanker 36. It is solved by a beam exposure device.

In the electron beam exposure apparatus, as shown in FIG. 3, there are a plurality of the first blankers 33 to 36, and the control circuit 45 further controls the plurality of the first blankers 33 to 36. It is characterized by having delay means for sequentially delaying the input drawing signal by a fixed time. In the electron beam exposure apparatus, the defocus mechanism is a support mechanism 32 that makes a distance from an electron beam irradiation target different between the first blankers 33 to 35 and the second blanker 36.

In the electron beam exposure apparatus, as shown in FIG. 7, the defocus mechanism is an electromagnetic mechanism for defocusing an electron beam passing through the second blanker 36 near the second blanker 36. Alternatively, it is the electrostatic mechanism 53. In the electron beam exposure apparatus, the first blankers 33 to 35 and the second blanker 36 are arranged in the same direction as the deflection direction of electrons passing through the first blankers 33 to 35 and the second blanker 36. The second blanker 36 is arranged, and is located rearmost in the deflection direction.

In the electron beam exposure apparatus, FIG.
As shown in (a), the control circuit 45 has a modulation circuit that modulates the inverted drawing signal to shorten the passage time of the electron beam. (Operation) Next, the operation of the present invention will be described.

According to the present invention, one blanking aperture is provided with a first blanker for main exposure and a second blanker for auxiliary exposure, and the second blanker is provided with a defocus mechanism. Was connected to a control circuit for delaying and inverting the drawing signal applied to the first blanker. With this, while irradiating the main exposure area with the electron beam through the first blanker, it is possible to irradiate the defocused electron beam to other than the main exposure area through the second blanker, thereby performing auxiliary exposure, By performing the auxiliary exposure and the main exposure almost simultaneously, the throughput is improved. In addition, since the auxiliary exposure and the main exposure are performed simultaneously or successively while the stage is moved, the exposure is completed by one stage movement, and the exposure performed again during the auxiliary exposure is performed. This eliminates the need to set parameters for use, further improving throughput.

When a plurality of first blankers exist in series, one pattern is exposed by an electron beam sequentially passing through the plurality of first blankers. Therefore, the electron beam passing through the second blanker for auxiliary exposure is used. Auxiliary exposure can be performed without changing the number of electrons. If only one first blanker is used, the signal applied to the second blanker is modulated to make the electron transit time shorter than the first blanker. Decrease.

As a defocus mechanism of the second blanker, a support mechanism having a structure in which the distance from the object to be exposed is different from that of the first blanker, or
Uses an electrostatic mechanism and an electromagnetic mechanism to change the focus. It should be noted that the first blanker and the second blanker are arranged in the same direction as the electron beam deflection direction, so that a continuous pattern can be formed in one line.

[0020]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of the present invention. (First Embodiment) FIG. 1 is a configuration diagram showing an electron beam exposure apparatus of the present invention. First, the drawing unit 21 of the electron beam exposure apparatus of the present embodiment will be described.

In FIG. 1, an electron gun 22 that emits an electron beam includes a grid 22a that emits electrons (charged particles).
And a cathode 22b having an opening and an anode 22c having an opening. Further, a condenser lens 24, a zoom lens 25, a condenser lens 24, a zoom lens 25, and the like are provided on a traveling path of the electron beam from the electron gun 22 to the XY stage 23.
A blanking aperture 31, a reduction lens 26, an objective aperture 27, and an objective lens 28 are sequentially arranged, and a first deflector 29 is provided between the condenser lens 24 and the zoom lens 25.
Is disposed, and a second deflector 30 is disposed between the objective aperture 27 and the deflector 29.

The blanking aperture 31 is shown in FIG.
As shown in (b), a conductive substrate 32 made of silicon containing p-type or n-type impurities is provided, and first to third blankers 33 to 35 are formed on the upper part thereof. , A fourth blanker 36 is formed, and the first to fourth blankers 33 to 36 are arranged in the same direction as the direction of deflection by the second deflector 30.

The blanking electrodes of the first to third blankers 33 to 35 are respectively formed directly on the upper surface of the substrate 32 and have a U-shaped shielding electrode 33 to which a predetermined substrate voltage is applied.
a, 34a, and 35a, and signal electrodes 33b, 34b, and 35b formed on the substrate 32 via the insulating layer 37 made of SiO ₂ and to which a main exposure signal is input. 35a and the first to third openings 33c, 34c of the substrate 32 by the signal electrodes 33b to 35b,
35c.

[0024] The fourth blanker 36, the substrate 32 through a flat U-shaped shield electrode 36a which is formed directly on the substrate 32 lower surface a predetermined voltage is applied, an insulating layer 38 made of SiO ₂ And a signal electrode 36b to which an auxiliary exposure signal is applied, and surrounds the opening 36c of the substrate 32. Further, the substrate 32 is applied with a constant voltage Vg such as a ground potential.

The signal electrodes 33b to 36b of the first to fourth blankers 33 to 36 are respectively shielded electrodes 33a to 36b.
and are formed at positions shielded from each other via a. The signal electrodes 33b to 36b are individually connected to first to fourth signal wirings 33d, 34d, 35d, and 36d formed on the substrate 32 via an insulating layer 37, respectively.

In such a blanking aperture 31, the electron beam that has passed through the first to third openings 33c to 35c of the first to third blankers 33 to 35 becomes substantially just focused, and The electron beam is applied to the EB resist R on the W while being positioned at a position where the electron beam passing through the fourth opening 36c of the fourth blanker 36 is defocused on the EB resist R. That is, the defocus of the fourth blanker 36 causes blurring in the EB resist R by the thickness of the substrate 32.

The first of the blanking apertures 31
The fourth to fourth signal wirings 33d to 36d are connected to the output terminal of the bitmap developing circuit 44 via a delay time control circuit 45 described later. Next, the data processing unit 40 of the electron beam exposure apparatus will be described. The data processing unit 40
A magnetic disk (data storage unit) 42 for outputting the compressed drawing data to a data bus of the CPU 41, a buffer memory 43 for inputting the drawing data from the data bus, and a compressed bit map of the buffer memory 43 A bit map expansion circuit 44 for expansion, a delay time control circuit 45 for delaying the expanded bit map data by a predetermined time, and an optical system control circuit for controlling the emission, convergence and trajectory of the electron beam by a signal from the CPU 41 46, a stage control circuit 47 for controlling the movement of the XY stage 23 in the X and Y directions based on the drawing data, and a predetermined range on the wafer W mounted on the XY stage 23 based on the drawing data. And a deflection control circuit 48 for deflecting and scanning the electron beam.

As shown in FIG. 3A, the delay time control circuit 45 has four wirings 45b to 45e branched from an input terminal 45a connected to the bit map development circuit 44. Is connected to the first output terminal 45f without going through the delay timer, and the second wiring 45c
Is the second output terminal 4 via one delay timer 49
5g, the third wiring 45d is drawn to the third output terminal 45h via two delay timers 49, and the fourth wiring 45e is connected to the three delay timers 49 and one impeller 50. Via the fourth output terminal 4
5i, thereby outputting, for example, four signal waveforms as shown in FIG. 3 (b). The first to them
The fourth output terminals 45b to 45e are connected to the first to fourth signal wirings 33d to 36d of the blanking aperture 31, respectively.
It is connected to the.

The deflection control circuit 48 includes first and second deflection control circuits.
Are connected to the deflectors 29 and 30 of the
Is configured to control the deflection direction of the electron beam passing through the first and second deflectors 29 and 30 based on the image data output from. The electron optical system control circuit 46 includes:
Electron gun 22, condenser lens 24, zoom lens 2
5, connected to a reduction lens 26 and an objective lens 27 to control the emission, convergence, and trajectory of the electron beam.

In the electron beam exposure apparatus as described above, with the wafer W mounted on the XY stage 23, an electron beam is irradiated on the EB resist R on the surface of the wafer W by a raster scan method to draw a predetermined pattern. .
In the raster scan method, for example, as shown by an arrow in FIG. 4A, after the electron beam is scanned by the second deflector 30 in the X direction by a predetermined width, the XY stage 23 is moved to the Y direction.
The operation of moving the electron beam by the irradiation width of the electron beam in the direction is repeated, thereby scanning the electron beam from the start point to the end point in the Y direction area. Next, the XY stage 23 is moved by a predetermined width (electron beam scanning width) in the X direction, and then the electron beam is scanned. By performing the scanning of the electron beam and the movement of the stage 23, the exposure is performed on all the exposure regions on the wafer W as shown in FIG. In this case, the movement of the XY stage 23 in the X and Y directions is controlled by the stage control circuit 47.

Whether or not the electron beam is irradiated on the wafer W by the blanking aperture 31 is selected. The electron beam whose trajectory is deflected by the blanking aperture 31 is irradiated around the opening of the objective aperture 28. You. The trajectory control of the electron beam by the blanking aperture 31 is performed based on the drawing data developed by the bitmap developing circuit 44. For example, FIG.
In the case of irradiating an electron beam to a region as shown in (1), the blanking aperture is controlled as follows. FIG.
3A, the hatched area is a main exposure area (irradiation pattern area) C, the area surrounded by a broken line is an auxiliary exposure area D, and the desired dose of electrons to be obtained in those areas. Fig. 5 shows the distribution (irradiation energy distribution) of
(b).

In order to obtain such an exposure pattern, when the first signal shown in FIG. 3B is output from the bit map development circuit 44 to the input terminal 45a of the delay time control circuit 45,
First to fourth output terminals 45f to 45f of delay time control circuit 45
5i outputs first to fourth signals as shown in FIG. 3 (b). In FIG. 3A, a first signal is output from a first output terminal 45f. Also, the second output terminal 45
g and the second and third signals output from the third output terminal 45h are delayed by the delay timer 49 by t seconds and 2t seconds, respectively, as compared with the first signal from the first output terminal 45f. Is output. Further, the fourth signal output from the fourth output terminal 45i is output with a delay of 3t seconds as compared with the first signal, and the output signal waveform is obtained by converting the first signal by the inverter 50. It has an inverted shape.

In FIG. 3B, Vg is a "low" level voltage such as a ground voltage, and Vh is a "high" level voltage. The voltage Vg is applied to the first to fourth shielding electrodes 33a to 33a through the conductive substrate 32 in FIG.
6a. The first to fourth signals output from the delay time control circuit 45 are the first to fourth blankers 3.
3 to 36 are applied to the first to fourth signal wirings 33d to 33d.

When the first to fourth signals have the voltage Vg, the first to fourth signal electrodes 33b to 36b and the first to fourth shielding electrodes 33a to 36a have the same potential. The electron beam passing through the first to fourth openings 33c to 36c of the first to fourth blankers 33 to 36 is irradiated on the EB resist R through the opening of the objective stop 28 without being deflected. Become. The electron beam passing through the opening of the objective aperture 28 is deflected by the second deflector 30 in the direction shown by the arrow in FIG.

When the first to fourth signals have the voltage Vh, the potentials of the first to fourth signal electrodes 33b to 36b are different from the potentials of the first to fourth shielding electrodes 33a to 36a. So that the first to fourth blankers 33 to 36
The electron beams passing through the openings 33c to 36c are deflected and applied to the objective aperture 28, and are not applied to the EB resist R.

From these, based on the signal waveform diagram of FIG. 3B, the first to fourth blanking apertures 31
By sending the first to fourth signals to the blankers 33 to 36 and shot the electron beam on the EB resist R, the dose distribution of electrons as shown in FIGS. 6A to 6D can be obtained. In FIG. 6, scanning of the electron beam by the second deflector 30 is shown as movement of the blanking aperture 31 for easy understanding.

FIG. 6A shows the irradiation amount of electrons when the elapsed time T from the start of irradiation in FIG. 3B becomes 2t seconds, and shows the electron beam passing through the first blanker 33. Only the light is irradiated on the wafer. The irradiation of the electron beam is performed for two shots in t seconds. When the elapsed time T from the start of the irradiation becomes 3 t seconds, the electron beam passing through the second blanker 34 is irradiated at the position irradiated with the electrons through the first blanker, so that the electron dose is emitted. The distribution of the quantities is as shown in FIG.

Further, when the elapsed time T becomes 4 t seconds, the electron beam having passed through the third blanker 35 is irradiated again by passing through the first and second blankers 33 and 34 to the irradiated position. Therefore, the distribution of the dose of electrons is shown in FIG.
(c). Moreover, blanking aperture 3
Since an L-level signal is input to the first fourth signal wiring 36d, the electron beam passing through the opening 36c of the fourth blanker 36 is applied to the EB resist R through the opening of the objective stop 28. . The irradiation positions of the electron beam passing through the fourth blanker 36 are the first to third blankers 33 to 3.
This is a region adjacent to the irradiation position of the electron beam that has passed through No. 5 and has not yet been irradiated with the electron beam.

When the elapsed time T reaches 10.5 t seconds, scanning and irradiation of the electron beam in a predetermined area in the X direction are completed. In this case, the distribution of the dose of the electrons is as shown in FIG. 6D, and the electron beam that has passed through the first to third blankers 33 to 35 and applied to the EB resist R is applied to the same region. However, the electron beam passing through the fourth blanker 36 and irradiating the EB resist R is the first to third blankers 3.
According to 3 to 35, the region not irradiated with the electrons is irradiated.

Therefore, the dose of the electrons irradiated by the fourth blanker 36 becomes ３ of that of the other regions, and the electron beam passing through the fourth blanker is
Since the focus is defocused, the irradiation range is substantially widened, which is the same as the auxiliary exposure described with reference to FIG. From the above, the main exposure is performed by the first to third blankers 33 to 36 and the fourth blanker 3
6, the auxiliary exposure is performed, and the main exposure and the auxiliary exposure are performed almost at the same time. Therefore, according to the above-described exposure apparatus, the XY stage as in the prior art is required to be 2
Throughput is improved as compared with the ghost exposure method in which the ghost is moved twice.

However, since three blankers 33 to 35 are used to form one irradiation pattern,
Focusing on only one irradiation pattern, the exposure time is three times longer than in the past. However, in practice, the first and second blankers 34 and 35 are not moved while the electron beam is passing through the first and second blankers 34 and 35.
Since the electron beam that has passed through the blanker 33 exposes another area, the number of shots of the electron beam actually increases only by two in one deflection scanning of the electron beam. The time required for each exposure is about half that of the conventional ghost exposure method. In addition, the setting of the device parameters performed during the auxiliary exposure becomes unnecessary. (Second Embodiment) In the first embodiment, the first to third blankers 3 are used as the blanking apertures 31.
3 to 35 are formed on the upper surface of the substrate 32 and the fourth blanker 3 is formed.
By adopting a structure in which 6 is formed on the lower surface of the substrate 32, the focus of the electron beam that has passed through the fourth blanker 36 is blurred.

However, in order to defocus, a structure as shown in FIG. 7 may be adopted. In FIG. 7, the fourth blanker 36 is formed on the upper surface of the substrate 32, and on the lower surface thereof, an annular insulating layer 51 and a conductive layer 52 surrounding the opening 36c are alternately stacked in three layers. An electrostatic lens 53 is formed. The uppermost and lowermost conductive films 52 of the electrostatic lens 50 are positively charged by the first amplifier 54, and the central conductive film 52 is negatively charged by the second amplifier 55.

According to such a configuration, while the electron beam is deflected by the fourth blanker 36, the electron beam passing through the fourth blanker 36 can be defocused by the electrostatic lens 53. In addition, the defocus amount of the electron beam can be appropriately adjusted, and the control of the auxiliary exposure becomes easy. Note that an electromagnetic lens may be used instead of the electrostatic lens 53. (Third Embodiment) In the first embodiment, the blanking aperture 31 has four blankers 33 to 36, but one blanker for just focus and one blanker for defocus are provided. Is also good.

Therefore, FIG.
The case where the third blanker 35 shown in FIG. 2 is used and the fourth blanker 36 shown in FIG. 2 is used for defocus will be described. In this case, when the third signal shown in FIG. 3B is applied to the third blanker 35 and the fourth signal is applied to the fourth blanker 36, the dose of the main exposure and the dose of the auxiliary exposure are obtained. Will be the same.

Therefore, the third and fourth blankers 35, 3
The amount of electrons of the electron beam incident on the electron beam 6 is made three times as large as that of the first embodiment, and the fourth electron beam as shown in FIG.
The fourth signal is modulated in synchronization with the time when the voltage Vg is applied to the blanker 36. The modulation is performed by applying a modulation signal that reduces the irradiation time of the voltage Vg to 1/3. The application of the modulation signal is performed by a modulation circuit (not shown) inserted on the output side of the inverter 50 in FIG.

According to this, as shown in FIG. 8 (b), the amount of electrons in one shot which passes through the fourth blanker 36 and irradiates the EB resist R is reduced to 1/3. The electron dose distribution similar to that described above is obtained. Since the number of blankers for main exposure is one, the throughput is slightly higher than in the first embodiment.

[0047]

As described above, according to the present invention, one blanking aperture is provided with a first blanker for main exposure and a second blanker for auxiliary exposure, and a defocus mechanism is provided on the second blanker. And a control circuit for delaying and inverting the drawing signal applied to the first blanker is connected to the second blanker.Thus, while irradiating the main exposure area with the electron beam through the first blanker, Since the defocused electron beam is irradiated to the area other than the main exposure area through the second blanker, thereby performing the auxiliary exposure, the auxiliary exposure and the main exposure can be performed almost simultaneously to improve the throughput.

In addition, since the auxiliary exposure and the main exposure are performed continuously or continuously while the stage is moved,
Exposure will be completed in the stage movement of times,
It is not necessary to set exposure parameters that have been performed again during the auxiliary exposure, and the throughput can be further improved. When a plurality of first blankers are present, one pattern is exposed by the electron beam sequentially passing through the plurality of first blankers, so that the number of electrons of the electron beam passing through the second blanker for auxiliary exposure is reduced. Without the need for auxiliary exposure.

When there is only one first blanker, if the signal applied to the second blanker is modulated to shorten the electron passage time, the number of electrons passing through the second blanker decreases. Auxiliary exposure becomes possible.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an electron beam exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view and a sectional view showing a blanking aperture applied to the electron beam exposure apparatus according to the first embodiment of the present invention.

FIG. 3 is a diagram illustrating a configuration of a bitmap signal delay time control circuit applied to the electron beam exposure apparatus according to the first embodiment of the present invention, and a waveform diagram of a drawing signal output from the circuit.

FIG. 4 is a plan view showing a direction and a region irradiated with an electron beam in the electron beam exposure apparatus according to the first embodiment of the present invention.

FIG. 5 is a plan view showing an exposure state to be obtained by the electron beam exposure apparatus according to the first embodiment of the present invention, and a distribution diagram of the number of electrons.

FIG. 6 is an electron distribution diagram showing an exposure state by the electron beam exposure apparatus according to the first embodiment of the present invention.

FIG. 7 is a plan view and a sectional view showing a blanking aperture applied to an electron beam exposure apparatus according to a second embodiment of the present invention.

FIG. 8 is a waveform diagram of a signal applied to a blanking aperture applied to an electron beam exposure apparatus according to a second embodiment of the present invention, and an electron distribution diagram by exposure.

FIG. 9 is a plan view and an electron distribution diagram showing an exposure result by a conventional exposure method.

FIG. 10 is a plan view and an electron distribution diagram showing an exposure result by a conventional ghost exposure method.

FIG. 11 is a configuration diagram of an electron beam exposure apparatus for performing a conventional ghost exposure method.

[Explanation of symbols]

 21 Drawing Unit 22 Electron Gun 23 XY Stage 31 Blanking Aperture 32 Substrate 33, 34, 35 First to Third Blanker 36 Fourth Blanker 43 Buffer Memory 44 Bit Map Expansion Circuit 45 Delay Time Control Circuit 53 Electrostatic Lens

Claims (6)

[Claims] 1. An electron beam exposure apparatus having a blanking aperture, comprising: a blanking aperture having a first blanker for main exposure, and a second blanker for auxiliary exposure having a defocus mechanism; A control circuit for delaying and inverting a drawing signal applied to one blanker and applying the delayed signal to the second blanker. 2. The apparatus according to claim 1, wherein a plurality of said first blankers are provided, and said control circuit has a delay means for sequentially delaying said drawing signals inputted to said plurality of said first blankers by a predetermined time. The electron beam exposure apparatus according to claim 1. 3. An electron beam exposure apparatus according to claim 1, wherein said defocus mechanism is a support mechanism for making a distance from an electron beam irradiation target different between said first blanker and said second blanker. apparatus. 4. The apparatus according to claim 1, wherein said defocusing mechanism is an electromagnetic mechanism or an electrostatic mechanism for defocusing an electron beam passing through said second blanker near said second blanker. Electron beam exposure equipment. 5. The first blanker and the second blanker are arranged in the same direction as the direction of deflection of electrons passing through the first blanker and the second blanker, and the second blanker is 2. The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus is located at the rearmost position with respect to the deflection direction. 6. An electron beam exposure apparatus according to claim 1, wherein said control circuit has a modulation circuit for modulating an inverted drawing signal to shorten a passage time of an electron beam.