JPH1062281A - Pressure detector of film forming device - Google Patents
Pressure detector of film forming deviceInfo
- Publication number
- JPH1062281A JPH1062281A JP23135296A JP23135296A JPH1062281A JP H1062281 A JPH1062281 A JP H1062281A JP 23135296 A JP23135296 A JP 23135296A JP 23135296 A JP23135296 A JP 23135296A JP H1062281 A JPH1062281 A JP H1062281A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- pipe
- temperature
- heater
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明はCVD装置等の成
膜装置に用いる圧力検出器、特に、被検知部の圧力を圧
力取出管により取り出してダイアフラムセンサ等の圧力
検知部により検出する圧力検出器であって、圧力取出管
やダイアフラムセンサ等を加熱して副生成物の付着の防
止を図る圧力検出器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure detector for use in a film forming apparatus such as a CVD apparatus, and more particularly to a pressure detector which extracts a pressure of a detected part by a pressure extraction pipe and detects the pressure by a pressure detection part such as a diaphragm sensor. In addition, the present invention relates to a pressure detector that heats a pressure extraction pipe, a diaphragm sensor, and the like to prevent adhesion of by-products.
【0002】[0002]
【従来の技術】成膜装置、例えば、CVD装置にあって
は、処理炉内を所定の真空度に維持して反応ガスを導入
し、基板等のワーク表面にポリシリコン等の薄膜を形成
する。このようなCVD装置は、温度や濃度とともに圧
力が重要な制御要素であり、炉内部の圧力や炉内に導入
する反応ガスの圧力等を圧力検出器により検出して適正
値に制御することが行われている。2. Description of the Related Art In a film forming apparatus, for example, a CVD apparatus, a reaction gas is introduced while maintaining the inside of a processing furnace at a predetermined degree of vacuum, and a thin film such as polysilicon is formed on the surface of a work such as a substrate. . In such a CVD apparatus, pressure as well as temperature and concentration are important control elements, and the pressure inside the furnace and the pressure of the reaction gas introduced into the furnace can be detected by a pressure detector and controlled to an appropriate value. Is being done.
【0003】従来、上述した圧力検出器としては、図2
に示すようなものが知られる。図2中、1は図示しない
処理炉に接続された反応ガス供給管(被検知部)であ
り、この反応ガス供給管1には、メインバルブ2が介設
され、また、この発明の対象である圧力検出器10が設
けられる。圧力検出器10は、反応ガス供給管1の途中
に圧力取出配管11を接続し、この圧力取出配管11の
先端にダイアフラムセンサ(圧力検知部)12を取り付
けて構成される。なお、18は圧力取出配管11に設け
られたエアバルブである。Conventionally, as the above-mentioned pressure detector, FIG.
The following are known. In FIG. 2, reference numeral 1 denotes a reaction gas supply pipe (detected portion) connected to a processing furnace (not shown). The reaction gas supply pipe 1 has a main valve 2 interposed therebetween. A pressure detector 10 is provided. The pressure detector 10 is configured by connecting a pressure extraction pipe 11 in the middle of the reaction gas supply pipe 1 and attaching a diaphragm sensor (pressure detection unit) 12 to the tip of the pressure extraction pipe 11. Reference numeral 18 denotes an air valve provided on the pressure extraction pipe 11.
【0004】圧力取出配管11には、配管11を加熱す
る配管加熱ヒータ13と、配管11の温度を検出する配
管温度センサ14が設けられる。これら配管加熱ヒータ
13と配管温度センサ14は温度調節器20に接続さ
れ、配管温度センサ14が配管11の温度検知信号を温
度調節器20に出力し、また、配管加熱ヒータ13が配
管11の温度に基づき温度調節器20により制御され
る。[0004] The pressure extraction pipe 11 is provided with a pipe heater 13 for heating the pipe 11 and a pipe temperature sensor 14 for detecting the temperature of the pipe 11. The pipe heater 13 and the pipe temperature sensor 14 are connected to a temperature controller 20, and the pipe temperature sensor 14 outputs a temperature detection signal of the pipe 11 to the temperature controller 20. Is controlled by the temperature controller 20 based on
【0005】ダイアフラムセンサ12は、圧力取出配管
11により導入された圧力により弾性変形するダイアフ
ラムを有し、また、加熱ヒータを内蔵する。このダイア
フラムセンサ12は、上述した温度調節器20に接続さ
れ、ダイアフラムの変形を電気信号に変換して温度調節
器20に出力し、また、加熱ヒータが上述した配管11
の温度に基づき温度調節器20により制御されてダイア
フラム等を加熱する。[0005] The diaphragm sensor 12 has a diaphragm that is elastically deformed by the pressure introduced through the pressure extraction pipe 11, and has a built-in heater. The diaphragm sensor 12 is connected to the above-mentioned temperature controller 20, converts the deformation of the diaphragm into an electric signal and outputs the electric signal to the temperature controller 20, and the heating heater is connected to the above-mentioned pipe 11
Is heated by the temperature controller 20 based on the temperature of the diaphragm.
【0006】この圧力検出器10は、圧力取出配管11
を配管加熱ヒータ13により、また、ダイアフラムセン
サ12が内蔵ヒータによりダイアフラム等を加熱し、配
管11やダイアフラムなどに副生成物が付着することを
防止している。そして、ダイアフラムセンサ12の検知
精度がダイアフラムの温度等により影響を受けるため、
温度調節器20においてダイアフラムの検知信号を配管
温度センサ14の検知出力等に基づき補正している。[0006] The pressure detector 10 includes a pressure extraction pipe 11.
The diaphragm and the like are heated by the piping heater 13 and the diaphragm sensor 12 by the built-in heater to prevent by-products from adhering to the piping 11 and the diaphragm. Since the detection accuracy of the diaphragm sensor 12 is affected by the temperature of the diaphragm, etc.
The temperature controller 20 corrects the diaphragm detection signal based on the detection output of the pipe temperature sensor 14 and the like.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、上述し
た従来の圧力検出器10にあっては、配管温度センサ1
4により検出された圧力取出配管11の温度に基づき配
管加熱ヒータ13とダイアフラムセンサ12内蔵の加熱
ヒータとの双方を制御するため、ダイアフラムセンサ1
2の温度が圧力取出配管の温度と一致せず制御目標値か
ら変動することがあり、この温度変動に起因した検知誤
差が生じるという問題があった。この発明は、上記問題
に鑑みなされたもので、ダイアフラムセンサの温度変動
に起因した誤差の発生を防止でき、高精度な圧力検出が
可能な圧力検出器を提供することを目的とする。However, in the conventional pressure detector 10 described above, the pipe temperature sensor 1
In order to control both the pipe heater 13 and the heater with the built-in diaphragm sensor 12 based on the temperature of the pressure extraction pipe 11 detected by the diaphragm sensor 1,
In some cases, the temperature of No. 2 does not match the temperature of the pressure extraction pipe and fluctuates from the control target value, causing a problem that a detection error due to this temperature fluctuation occurs. The present invention has been made in view of the above problems, and has as its object to provide a pressure detector capable of preventing occurrence of an error due to temperature fluctuation of a diaphragm sensor and capable of detecting pressure with high accuracy.
【0008】[0008]
【課題を解決するための手段】上記目的を達成するた
め、この発明は、成膜装置の被検知部に圧力取出配管を
接続し、該圧力取出配管に圧力検知部を取り付けるとと
もに、前記圧力取出配管を加熱する配管加熱ヒータと前
記圧力検知部を加熱する検知部加熱ヒータとを設けた成
膜装置の圧力検出器において、前記圧力取出配管の温度
を検出する配管温度センサと、前記圧力検知部の温度を
検出する検知部温度センサと、前記検知部温度センサお
よび配管温度センサの検知出力に基づき前記配管加熱ヒ
ータと前記検知部加熱ヒータとを制御して前記圧力取出
配管の温度と前記圧力検知部の温度との温度差を所定値
以下に保持する温度調節器とを設けた。In order to achieve the above object, the present invention relates to a method for connecting a pressure extraction pipe to a detected portion of a film forming apparatus, attaching a pressure detection section to the pressure extraction pipe, In a pressure detector of a film forming apparatus provided with a pipe heater for heating a pipe and a detector heater for heating the pressure detector, a pipe temperature sensor for detecting the temperature of the pressure extraction pipe, and the pressure detector Temperature of the pressure extraction pipe and the pressure detection by controlling the pipe heating heater and the detection section heater based on the detection outputs of the detection section temperature sensor and the pipe temperature sensor. And a temperature controller for maintaining a temperature difference from the temperature of the section at a predetermined value or less.
【0009】この発明にかかる圧力検出器の適用対象で
ある成膜装置は、CVD装置に代表されるが、その他の
成膜装置、例えば、エピタキシャル成長装置等に適用す
ることも可能である。また、成膜装置の被検知部として
は、処理炉、処理炉へ反応ガスを供給する反応ガス供給
配管あるいは処理炉からガスを排出する排出管等が挙げ
られるが、被検知部は任意に選択される。The film forming apparatus to which the pressure detector according to the present invention is applied is represented by a CVD apparatus, but can be applied to other film forming apparatuses, for example, an epitaxial growth apparatus. Examples of the detected part of the film forming apparatus include a processing furnace, a reaction gas supply pipe for supplying a reaction gas to the processing furnace, and a discharge pipe for discharging a gas from the processing furnace. Is done.
【0010】圧力検知部はダイアフラムセンサ等の圧力
センサが用いられるが、特に、この発明は、圧力を部材
の変形に置換して検出する圧力検知部に有効である。配
管加熱ヒータおよび検知部加熱ヒータはジュール熱を生
じる電気ヒータ等で代表されるが、赤外線ランプ等の他
の加熱手段を用いることも可能である。配管温度センサ
および検知部温度センサは、周知の熱伝対等が用いら
れ、それぞれが別個独立に温度調節器に接続される。Although a pressure sensor such as a diaphragm sensor is used as the pressure detecting unit, the present invention is particularly effective for a pressure detecting unit that detects a pressure by replacing the pressure with a deformation of a member. The pipe heater and the detector heater are typified by an electric heater that generates Joule heat, but other heating means such as an infrared lamp can be used. A well-known thermocouple or the like is used for the pipe temperature sensor and the detection unit temperature sensor, and each of them is separately and independently connected to the temperature controller.
【0011】温度調節器は、CVD装置等のマシンコン
トローラ、あるいは、圧力検出装置に専用のコントロー
ラが用いられる。この温度調節器は、圧力取出配管の温
度と圧力検知部の温度との温度差が所定値以下になるよ
うに、望ましくは、温度が一致するように各ヒータを制
御する。As the temperature controller, a machine controller such as a CVD device or a controller dedicated to a pressure detecting device is used. This temperature controller controls each heater so that the temperature difference between the temperature of the pressure extraction pipe and the temperature of the pressure detection unit is equal to or less than a predetermined value, and desirably, the temperatures match.
【0012】この発明にかかる成膜装置の圧力検出器
は、圧力取出配管が配管温度センサの検知出力に基づき
制御される配管加熱ヒータにより加熱され、また、圧力
検知部が検知部温度センサの検知出力に基づき制御され
る検知部加熱ヒータにより加熱され、圧力取出配管と圧
力検知部の温度差が所定値以下に維持される。このた
め、圧力取出配管のみならず圧力検知部の温度を正確に
管理でき、温度変動に起因した誤差の発生が防止でき、
圧力を高い精度で検出できる。In the pressure detector of the film forming apparatus according to the present invention, the pressure extraction pipe is heated by a pipe heater controlled based on the detection output of the pipe temperature sensor, and the pressure detection section is detected by the detection section temperature sensor. The temperature is heated by the detector heater controlled based on the output, and the temperature difference between the pressure extraction pipe and the pressure detector is maintained at a predetermined value or less. For this reason, the temperature of not only the pressure extraction pipe but also the pressure detection section can be accurately managed, and the occurrence of errors due to temperature fluctuations can be prevented.
Pressure can be detected with high accuracy.
【0013】[0013]
【発明の実施の形態】以下、この発明の実施の形態を図
面を参照して説明する。図1はこの発明の一の実施の形
態にかかる成膜装置の圧力検出器を示す模式構成図であ
る。なお、前述した図2の従来の圧力検出器と同一の部
分には同一の番号を付して説明を省略する。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a pressure detector of a film forming apparatus according to one embodiment of the present invention. Note that the same parts as those of the conventional pressure detector of FIG. 2 described above are denoted by the same reference numerals, and description thereof will be omitted.
【0014】図1に示すように、ダイアフラムセンサ1
2にはダイアフラム等の温度を検出する検知部温度セン
サ19が設けられる。この検知部温度センサ19は、熱
伝対等からなり、温度調節器20に接続される。As shown in FIG. 1, the diaphragm sensor 1
A detection unit temperature sensor 19 for detecting the temperature of the diaphragm or the like is provided at 2. The detection unit temperature sensor 19 is formed of a thermocouple or the like, and is connected to the temperature controller 20.
【0015】この実施の形態にあっては、圧力取出配管
11の温度を配管温度センサ14により検出し、また、
ダイアフラムセンサ12の温度を検知部温度センサ19
により検出する。そして、温度調節器20が配管温度セ
ンサ14の検知出力に基づき配管加熱ヒータ13を駆動
制御し、また、検知部温度センサ19の検知出力に基づ
きダイアフラムセンサ12の内蔵ヒータを駆動制御し、
圧力取出配管11とダイアフラムセンサ12を加熱す
る。このため、これら圧力取出配管11やダイアフラム
センサ12に副生成物が付着することが防止できる。In this embodiment, the temperature of the pressure extraction pipe 11 is detected by a pipe temperature sensor 14;
Temperature sensor 19 for detecting the temperature of diaphragm sensor 12
Is detected by Then, the temperature controller 20 controls the drive of the pipe heater 13 based on the detection output of the pipe temperature sensor 14, and controls the drive of the built-in heater of the diaphragm sensor 12 based on the detection output of the detection unit temperature sensor 19.
The pressure extraction pipe 11 and the diaphragm sensor 12 are heated. For this reason, by-products can be prevented from adhering to the pressure extraction pipe 11 and the diaphragm sensor 12.
【0016】そして、温度調節器20は、圧力取出配管
11とダイアフラム12の温度差が所定値、例えば、5
°C以下になるように配管加熱ヒータ13とダイアフラ
ムセンサ12内蔵のヒータを制御する。このため、圧力
取出配管11とダイアフラムセンサ12をほぼ同一の温
度に維持でき、また、ダイアフラムセンサ12の温度を
正確に管理できその温度が変動することが無い。このた
め、温度変動に起因した誤差の発生も無く、高い精度で
圧力を検出できる。The temperature controller 20 determines that the temperature difference between the pressure extraction pipe 11 and the diaphragm 12 is a predetermined value, for example, 5
The temperature of the piping heater 13 and the built-in heater of the diaphragm sensor 12 are controlled so as to be equal to or lower than ° C. For this reason, the pressure extraction pipe 11 and the diaphragm sensor 12 can be maintained at substantially the same temperature, and the temperature of the diaphragm sensor 12 can be accurately managed, so that the temperature does not fluctuate. Therefore, the pressure can be detected with high accuracy without occurrence of an error due to temperature fluctuation.
【0017】すなわち、ダイアフラムセンサ12は圧力
取出配管11を経て導入された圧力でダイアフラムが変
形し、このダイアフラムの変形を圧力値として出力する
ため、ダイアフラムに熱変形を生じさせる温度の影響を
受けやすいが、温度が正確に管理されるため、温度調節
器20における補正も正確に行え、圧力を高精度で検出
できる。That is, the diaphragm sensor 12 is deformed by the pressure introduced through the pressure extraction pipe 11, and outputs the deformation of the diaphragm as a pressure value. Therefore, the diaphragm sensor 12 is easily affected by the temperature at which the diaphragm is thermally deformed. However, since the temperature is accurately managed, the correction in the temperature controller 20 can be performed accurately, and the pressure can be detected with high accuracy.
【0018】[0018]
【発明の効果】以上説明したように、この発明にかかる
成膜装置の圧力検出器によれば、圧力検知部および該圧
力検知部に圧力を導く圧力取出配管にそれぞれ温度セン
サと加熱ヒータを個別に設け、これら圧力検知部と圧力
取出配管とをそれぞれのセンサに基づき加熱ヒータで別
個独立に加熱し、かつ、圧力検知部と圧力取出配管の温
度差が所定値以下になるように制御するため、圧力検知
部や圧力取出配管に副生成物が付着することを防止で
き、また、圧力検知部の温度変動に起因した圧力検知誤
差の発生も防止でき、圧力を高精度で検出できる。As described above, according to the pressure detector of the film forming apparatus according to the present invention, the temperature sensor and the heater are individually provided in the pressure detecting section and the pressure extracting pipe for guiding the pressure to the pressure detecting section. The pressure detection unit and the pressure extraction pipe are separately and independently heated by a heater based on the respective sensors, and the temperature difference between the pressure detection unit and the pressure extraction pipe is controlled to be equal to or less than a predetermined value. In addition, by-products can be prevented from adhering to the pressure detection unit and the pressure extraction pipe, and a pressure detection error caused by a temperature change in the pressure detection unit can be prevented, so that the pressure can be detected with high accuracy.
【図1】この発明の一の実施の形態にかかる成膜装置の
圧力検出器を示す模式構成図である。FIG. 1 is a schematic configuration diagram showing a pressure detector of a film forming apparatus according to one embodiment of the present invention.
【図2】従来の成膜装置の圧力検出器を示す模式構成図
である。FIG. 2 is a schematic configuration diagram showing a pressure detector of a conventional film forming apparatus.
1 反応ガス供給管(被検知部) 10 圧力検出器 11 圧力取出配管 12 ダイアフラムセンサ(圧力検知部、検知部加熱ヒ
ータ) 13 配管加熱ヒータ 14 配管温度センサ 19 検知部温度センサ 20 温度調節器DESCRIPTION OF SYMBOLS 1 Reaction gas supply pipe (detection part) 10 Pressure detector 11 Pressure extraction pipe 12 Diaphragm sensor (pressure detection part, detection part heating heater) 13 Pipe heating heater 14 Pipe temperature sensor 19 Detection part temperature sensor 20 Temperature controller
Claims (1)
続し、該圧力取出配管に圧力検知部を取り付けるととも
に、前記圧力取出配管を加熱する配管加熱ヒータと前記
圧力検知部を加熱する検知部加熱ヒータとを設けた成膜
装置の圧力検出器において、 前記圧力取出配管の温度を検出する配管温度センサと、
前記圧力検知部の温度を検出する検知部温度センサと、
前記検知部温度センサおよび配管温度センサの検知出力
に基づき前記配管加熱ヒータと前記検知部加熱ヒータと
を制御して前記圧力取出配管の温度と前記圧力検知部の
温度との温度差を所定値以下に保持する温度調節器とを
備えることを特徴とする成膜装置の圧力検出器。1. A pressure extraction pipe is connected to a detected section of a film forming apparatus, a pressure detection section is attached to the pressure extraction pipe, and a pipe heater for heating the pressure extraction pipe and the pressure detection section are heated. In a pressure detector of a film forming apparatus provided with a detection unit heater, a pipe temperature sensor for detecting a temperature of the pressure extraction pipe,
A detector temperature sensor for detecting the temperature of the pressure detector,
The pipe heater and the detector heater are controlled based on the detection outputs of the detector temperature sensor and the pipe temperature sensor, and the temperature difference between the temperature of the pressure extraction pipe and the temperature of the pressure detector is equal to or less than a predetermined value. And a temperature controller for holding the pressure in the film forming apparatus.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23135296A JPH1062281A (en) | 1996-08-13 | 1996-08-13 | Pressure detector of film forming device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23135296A JPH1062281A (en) | 1996-08-13 | 1996-08-13 | Pressure detector of film forming device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1062281A true JPH1062281A (en) | 1998-03-06 |
Family
ID=16922283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23135296A Pending JPH1062281A (en) | 1996-08-13 | 1996-08-13 | Pressure detector of film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1062281A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005530141A (en) * | 2002-06-13 | 2005-10-06 | マイクロリス コーポレイション | Temperature regulator for use with pressure sensors |
JP2009510626A (en) * | 2005-09-29 | 2009-03-12 | ローズマウント インコーポレイテッド | Process field device temperature control |
KR101252925B1 (en) | 2010-10-18 | 2013-04-09 | 주식회사 엘지실트론 | Exhaust System for Single Crystal Grower and Single Crystal Grower including the same |
-
1996
- 1996-08-13 JP JP23135296A patent/JPH1062281A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005530141A (en) * | 2002-06-13 | 2005-10-06 | マイクロリス コーポレイション | Temperature regulator for use with pressure sensors |
JP2009510626A (en) * | 2005-09-29 | 2009-03-12 | ローズマウント インコーポレイテッド | Process field device temperature control |
KR101252925B1 (en) | 2010-10-18 | 2013-04-09 | 주식회사 엘지실트론 | Exhaust System for Single Crystal Grower and Single Crystal Grower including the same |
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