JPH106047A - Laser beam melt-irradiating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To set the irradiating range taking into consideration the size of an IC chip in executing a laser beam irradiation for melting by dividing it into plural irradiating ranges and to enable the laser beam irradiation for melt ing in the same irradiating condition to the IC chip near the boundary of the irradiating range. SOLUTION: In a picture input device 20, an input data file composed of irradiation range positional data is made according to the size of each IC chip 4 of a semi-conductor wafer 3. Further, a control data file for executing the irradiation of pulse laser beam under almost uniform irradiating condition to each irradiating range of the semi-conductor wafer 3 in a control device 40, is made based on this input data file and a recipe data file showing the size of each IC chip 4. A laser beam device 5 and an XY stage 8 are operated according to this control data file and the semi-conductor wafer 3 is irradiated with the pulse laser beam 6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser melting irradiation apparatus for irradiating, for example, a semiconductor wafer surface with a laser beam to melt Cu and Al on the semiconductor wafer surface.

[0002]

2. Description of the Related Art In a semiconductor wafer manufacturing process, FIG.
As shown in FIG. 2A, a Cu or Al film 2 is formed on a wafer substrate 1 by sputtering, and then, as shown in FIG. Is performed.

Thereafter, the surface of the wafer substrate 1 is flattened by shaving the film 2 on the wafer substrate 1 as shown in FIG. By the way, in order to manufacture such a semiconductor wafer, one semiconductor wafer is used before manufacturing the semiconductor wafer, and each semiconductor chip (hereinafter, referred to as an IC chip) for a plurality of laser melting irradiation conditions on the semiconductor wafer surface. Test production.

In this test production, a wafer area (an area on which an IC chip is formed) on a semiconductor wafer surface is divided into a plurality of irradiation areas, and each of the irradiation areas is subjected to laser melting irradiation with a different laser melting irradiation energy output. ing.

FIG. 15 is a block diagram of such a laser melting and irradiating apparatus. A plurality of IC chips 4 are formed on a semiconductor wafer 3 in the vertical and horizontal directions. An optical system 7 is arranged on the optical path of the pulsed laser light 6 output from the laser device 5, and the laser light is irradiated onto the surface of the semiconductor wafer 3 by the optical system 7.

The optical system 7 is mounted on an XY table 8 and scans the surface of the semiconductor wafer 3 with the pulse laser beam 6 by driving the XY table 8 in the XY directions. The XY table 8 includes an X-direction motor 8a and a Y-direction motor 8b.

The operations of the laser device 5 and the XY table 8 are controlled by a control device 9. In this case, the control device 9 divides the surface of the semiconductor wafer into a plurality of irradiation regions, and sets different laser melting irradiation energy outputs for each of the irradiation regions.

Therefore, in such an apparatus, when the pulse laser beam 6 is output from the laser device 5, the pulse laser beam 6 is reflected by the optical system 7 and is irradiated on the surface of the semiconductor wafer 3. Reference numeral 6a denotes a laser irradiation aperture of the pulse laser beam 6.

At this time, the optical system 7 is controlled to move on the XY plane by driving the XY table 8, and the pulse laser beam 6 is scanned and irradiated on the wafer region of the semiconductor wafer 3. Then, each IC chip 4 on the surface of the semiconductor wafer 3 is
Each of the CI chips 4 arranged in the X direction is divided into irradiation areas, and the irradiation areas are numbered from "1" to "2".
Add “4”. Then, these irradiation area numbers “1”
The pulse laser beam 6 is irradiated while changing the laser melting irradiation energy output every "2" to "4".

[0010]

However, when the surface of the semiconductor wafer 3 is divided into a plurality of irradiation areas, each position data of these irradiation areas is usually a fixed value.
The size of the IC chip 4 is not taken into consideration.

For this reason, if the size of each IC chip 4 on the surface of the semiconductor wafer 3 matches the size of each irradiation area,
As shown in FIG. 16, the row of each IC chip 4 in the X direction overlaps with each irradiation area (numbers “1”, “2” to “5”). However, as shown in FIG. If the size of each irradiation area (numbers “1”, “2” to “4”) does not match, when the semiconductor wafer 3 is irradiated with the pulse laser beam 6, the IC chip 4 near the boundary of each irradiation area Is not melt-irradiated, or is melt-irradiated by the pulsed laser beam 6 of another laser-irradiation energy output in another irradiation region, and many IC chips 4 that do not satisfy the irradiation conditions are generated.

The difference between the size of the IC chip 4 and the size of each irradiation area is partly due to the difference in the size of the IC chip 4 on each semiconductor wafer 3. Therefore, with such an IC chip 4, it is difficult to obtain accurate laser fusion irradiation results even in test production.

Therefore, according to the present invention, when irradiating a laser beam by dividing it into a plurality of irradiation regions, the irradiation region can be set in consideration of the size of the IC chip. An object of the present invention is to provide a laser melting irradiation device capable of melting irradiation.

[0014]

According to a first aspect of the present invention, there is provided a laser melting irradiation apparatus for irradiating a processing object having a plurality of regions with a laser beam to melt the processing object. Input means for creating an input data file consisting of irradiation area position data according to the size of the area of each area irradiated with the laser light of at least the object to be processed;
Based on the input data file created by the input means and the recipe data file indicating at least the size of each area of the object to be irradiated with the laser light, the laser light is substantially applied to each area of the object to be processed. Control data file creating means for creating a control data file for uniform irradiation conditions, and irradiating means for irradiating the object with laser light in accordance with the control data file created by the control data file creating means Laser melting irradiation device.

With such a laser melting irradiation apparatus,
Create an input data file consisting of irradiation area position data corresponding to at least the size of each area of the object to be processed by laser melting and irradiating the object to be processed, and input the input data file and at least the size of each area of the object. On the basis of the recipe data file shown, a control data file is created for setting the laser light to substantially uniform irradiation conditions for each region of the object to be processed. Then, the object to be processed is irradiated with a laser beam according to the control data file.

As described above, the object is irradiated with the laser beam based on the irradiation area position data corresponding to the size of each area of the object to be processed. For example, the irradiation region can be set in consideration of the size of the IC chip, and the IC chip near the boundary of the irradiation region can be irradiated by laser melting under the same irradiation condition.

According to a second aspect of the present invention, in the laser melting and irradiating apparatus according to the first aspect, the input means superimposes and displays an outline drawing of the object to be processed and a coordinate system indicating each region of the object to be processed. A function is provided for setting, for each region where the object to be processed is laser-melted and irradiated according to the outline drawing and the coordinate system, at least an irradiation area position data including a starting point and an end point for laser-irradiating the object to be processed and output data for melting and irradiation energy. .

According to a third aspect of the present invention, in the laser melting and irradiating apparatus according to the first aspect, the control data file creating means is based on the input data file and a recipe data file indicating at least the size of each region of the object to be processed. Start coordinates, end coordinates for irradiating the object with laser light,
A function of creating a control data file including intervals at which laser light is irradiated onto the object to be processed and the number of laser light irradiations;

According to a fourth aspect of the present invention, there is provided a laser melting and irradiating apparatus for irradiating a semiconductor wafer on which a plurality of semiconductor chips are formed with a pulse laser beam to melt the semiconductor wafer. A coordinate system corresponding to the size of the area irradiated with the laser light is superimposed and displayed, and at least each semiconductor wafer is laser-melted and irradiated according to these outline drawings and the coordinate system. An input unit having a function of setting irradiation area position data including a start point and an end point, and fusion irradiation energy output data; and an input data file and a recipe data file indicating at least a size of a semiconductor chip irradiated with laser light. Coordinates, end coordinates, pulse rate for irradiating the semiconductor wafer with pulsed laser light A control data file creating means for creating a control data file comprising an interval at which the light is irradiated onto the semiconductor wafer surface and the number of pulsed laser beam irradiations; and a pulse laser beam according to the control data file created by the control data file creating means. And a irradiating unit for irradiating the semiconductor wafer with the laser beam.

With such a laser melting irradiation apparatus,
The outline drawing of the semiconductor wafer and the coordinate system corresponding to the size of each semiconductor chip are superimposed and displayed, and according to this display, at least for each region where the semiconductor wafer is laser-melted and irradiated, at least a starting point for laser-melting and irradiating the semiconductor wafer and The irradiation area position data including the end point and the fusion irradiation energy output data are set.

When these data are set, start coordinates and end coordinates for irradiating pulse laser light, intervals for irradiating pulse laser light based on an input data file composed of these data and at least a recipe data file indicating the size of the semiconductor chip. Then, a control data file including the number of irradiations of the pulse laser light is created.

Then, the semiconductor wafer is irradiated with a pulse laser beam according to the control data file. Since the semiconductor wafer is irradiated with the laser beam based on the irradiation area position data corresponding to the size of the IC chip, the size of the IC chip is taken into consideration when dividing into a plurality of irradiation areas and performing laser melting irradiation. An irradiation area can be set, and an IC chip near the boundary of the irradiation area can be subjected to laser melting irradiation under the same irradiation conditions.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION

(1) Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 15 are denoted by the same reference numerals, and detailed description thereof will be omitted. FIG. 1 is a configuration diagram of a laser melting irradiation apparatus.

The screen input device 20 has a function of creating an input data file (hereinafter referred to as a screen input data file) including irradiation area position data corresponding to at least the size of the IC chip 4 for irradiating the semiconductor wafer 3 with the laser beam. have.

More specifically, the screen input device 2
0 indicates a CRT display 21 and a keyboard 22
An operation screen 24 shown in FIG. 2 is displayed on the display screen of the CRT display. The operation input of the keyboard 22 and the mouse 23 according to the operation screen 24 causes the irradiation area position data and the fusion irradiation energy output to be displayed. Has a function of creating a screen input data file.

FIG. 2 is a schematic diagram of the operation screen 24. On the operation screen 24, a wafer diagram 25 which is an outline view of the semiconductor wafer 3 is displayed, and an IC chip matrix coordinate system 26 corresponding to the size of each IC chip 4 is displayed so as to be superimposed on the wafer diagram 25. Have been.

Of these, the IC chip matrix coordinate system 26 is represented by X
(Column) and Y (column) to form a coordinate system.
The size of the unit frame defined by (row) and Y (row) and the size of the IC chip 4 match.

On the operation screen 24, an irradiation area data setting column 27 is displayed. The irradiation region data setting column 27 includes an irradiation region number column 28 for setting each irradiation region for setting a different laser melting irradiation energy output for each IC chip 4 of the semiconductor wafer 3.
A start point matrix coordinate column 29 indicating a start point of irradiating the pulsed laser beam 6 to these irradiation regions, an end point matrix coordinate column 30 indicating an end point of laser beam irradiation to these irradiation regions, and a laser melting irradiation energy output are set. It is formed from a column 31 for the energy output of the fusion irradiation.

The irradiation area number column 28 contains irradiation area numbers "1" to "n", for example, irradiation area numbers "1" to "5".
For example, [01] is set for the irradiation area number "1" shown in FIG. 2, and [02] is set for the irradiation area number "2" shown in FIG.

In the starting point matrix coordinate field 29, for example, if the irradiation area number "1" is set, the starting point coordinates [03] [02] of the irradiation area number "1" in the IC chip matrix coordinate system 26 are set. Is done.

In the column 30 of the end point matrix coordinates, for example, if the irradiation area number "1" is set, the end point coordinates [07] [02] of the irradiation area number "1" in the IC chip matrix coordinate system 26 are set. Is done.

Each of the irradiation areas numbered “1” to “5” corresponds to, for example, the IC chip matrix coordinate system 3 shown in FIG.
In 2, the area is set as a quadrilateral area that is diagonal to the start point matrix coordinates 33 and the end point matrix coordinates 34. In this IC chip matrix coordinate system 32, the starting point matrix coordinates 33 are [02]
[02], and the end point matrix coordinates 34 are [06] [05]
It is.

The fusion irradiation energy output column 31 contains a fusion irradiation energy output by the pulse laser beam 6, for example, 120.
J / cm ² is set. Also, the screen input device 20 reads each data of the irradiation area number, the start point matrix coordinates, the end point matrix coordinates, and the fusion irradiation energy output set on the operation screen 24, and reads a screen input data file shown in FIG. Has the function of creating

This screen input data file is formed of an irradiation area number, a start point matrix coordinate, an end point matrix coordinate, a fusion irradiation energy output, and a return line feed character CR for each of the irradiation area numbers "1" to "n". . Note that this screen input data file includes the irradiation area numbers “1” to “n”.
Each is formed of 14 bytes in ASCII format.

The control device 40 sends the pulse laser beam 6 to the semiconductor wafer 3 based on the screen input data file created by the screen input device 20 and at least the recipe data file indicating the size of each IC chip 4 of the semiconductor wafer 3. A control data file for generating substantially uniform irradiation conditions is created, and the operation of the laser device 5 and the XY table 8 is controlled according to the control data file.
It has two functions.

Among them, the control data file creating means 41
Holds a recipe data file indicating the size and the like of each IC chip 4 of the semiconductor wafer 3. As shown in FIG. 5, the recipe data file indicates the size of the IC chip 4 in the X direction (ch_x) and the Y direction (ch_y), the laser irradiation aperture s, and the absolute coordinates of the matrix coordinate reference point of the IC chip matrix coordinate system 26. (X coordinate: Ox, Y coordinate: Oy).
The size of the IC chip 4, the laser irradiation aperture s, and the absolute coordinates of the matrix coordinate reference point are each formed by 6 bytes.

The control data file creating means 41 includes:
The flow chart for converting the screen input data file into the control data file shown in FIG. 6 is executed to read the screen input data file and the recipe data, and the control data file shown in FIG. 7 is read based on the screen input data file and the recipe data. Has the ability to create.

This control data file is formed from the irradiation area number, the number of data, each data (1) to (m), and the fusion irradiation energy output for each of the irradiation area numbers "1" to "n".

The data (1) to (m) are irradiation start coordinates (X coordinate, Y coordinate), irradiation end coordinates (X coordinate, Y coordinate) for irradiating the semiconductor wafer 3 with the pulse laser beam, and X for irradiating a pulsed laser beam onto a semiconductor wafer surface
It is formed from the direction interval (X direction distance) and the number of irradiations of the pulse laser beam.

It should be noted that this control data file is ASC
The irradiation area number is 2 bytes, the number of data is 2 bytes, each data (1) to (m) is 32 bytes, and the fusion irradiation energy output is 3 bytes.

The irradiation start coordinates (X coordinate, Y coordinate) are each 6 bytes, the irradiation end coordinates (X coordinate, Y coordinate) are each 6 bytes, the distance in the X direction is 5 bytes, and the irradiation number of the pulse laser light is 3 bytes. It is formed by a tool.

The irradiation control execution means 42 executes the flow chart of the irradiation control shown in FIG.
1 has a function of controlling the operation of the laser device 5 and the XY table 8 in accordance with the control data file created by 1 and irradiating the semiconductor wafer 3 with the pulse laser beam 6.

Next, the operation of the device configured as described above will be described. The screen input device 20 displays an operation screen 24 shown in FIG. 2 on the display screen of the CRT display 21.

This operation screen 24 displays an IC chip matrix coordinate system 26 corresponding to the size of each IC chip 4 superimposed on a wafer diagram 25 showing an outline view of the semiconductor wafer 3 and displays irradiation area data. A setting column 27 is displayed.

In this state, the keyboard 22 and the mouse 23
Is operated, each data is set in the irradiation area data setting column 27 by these operation inputs. For example, in the irradiation region number column 28, irradiation region numbers "1" to "n", for example, irradiation region numbers "1" are set.

If, for example, "1" is set in the irradiation area number in the starting point matrix coordinate field 29, the starting point coordinates [03] [03] of the irradiation area number "1" in the IC chip matrix coordinate system 26 are set. 02] is set, and the end point matrix coordinate column 30 is set.
Is set to the end point coordinates [07] [02].

Each of these irradiation areas is set as a quadrilateral area which is diagonal to the start point matrix coordinates 33 and the end point matrix coordinates 34 in the IC chip matrix coordinate system 32 as shown in FIG. 3, for example.

Further, in the column 31 of the fusion irradiation energy output, the fusion irradiation energy output by the pulse laser beam 6, for example, 120 J / cm ² is set. Hereinafter, similarly, a start point matrix coordinate, an end point matrix coordinate, and a fusion irradiation energy output are set for each of the irradiation region numbers “2” to “5”.

As described above, each of the irradiation area numbers "1" to "5"
When the setting of the irradiation area data and the fusion irradiation energy output for the irradiation is completed, the screen input device 20 outputs a screen input data file obtained by dividing the data for each of the irradiation area numbers “1” to “n”, for example, the irradiation area number “1”. Then, the starting point matrix coordinates [03] [02] and the ending point matrix coordinates [07] [0
2] Read the melting irradiation energy output 120 J / cm ² and create a screen input data file shown in FIG. 4 from these data.

This screen input data file is data set in accordance with the operation screen 24 using the IC chip matrix coordinate system 26 corresponding to the size of each IC chip 4 on the semiconductor wafer 3. 4 is the position data of the irradiation area in consideration of the size of “4”.

Next, the control data file creation means 41
The flow chart for converting the screen input data file shown in FIG. 6 into the control data file is executed, and the control data file shown in FIG. 7 is created based on the screen input data file and the recipe data.

That is, the control data file creating means 4
1 reads the screen input data file created by the screen input device 20 in step # 1, and reads the recipe data file shown in FIG. 5 held by itself in the next step # 2.

Next, the control data file creation means 41
In step # 3, the data of the irradiation area number "1" in the screen input data file is read, and in the next step # 4, the absolute position coordinates of the start point and the end point in the irradiation area number "1" are obtained.

For example, as shown in FIG. 9, the starting point absolute position coordinates (Xs, Ys) and the ending point absolute position coordinates (Xe, Ye).
Are the start point matrix coordinates 33, the end point matrix coordinates 34 of the irradiation area,
It is obtained from the matrix coordinate reference points (Ox, Oy) by the following equation.

The size of the IC chip 4 in the X direction is (ch_
x), the size of the IC chip 4 in the Y direction is (ch_y), the X absolute position coordinate of the matrix coordinate reference point of the IC chip matrix coordinate system 26 is Ox the Y absolute position of the matrix coordinate reference point of the IC chip matrix coordinate system 26 If the coordinates are Oy and S is the laser irradiation aperture (laser pulse width applied to the semiconductor wafer 3), Xs = (starting point matrix X coordinate-1) × (ch_x) + Ox (1) Ys = (starting point matrix X coordinate −1) × (ch_y) + Oy (2) Xe = (end point matrix X coordinate) × (ch_x) + Ox (3) Ye = (end point matrix X coordinate) × (ch_y) + Oy (4) The control data file creator 41 determines in step # 5
, The number of shot rows sn_x in the X direction and the shot row interval sh_x in the X direction are calculated by the following equation.

Sn_x = (Xe−Xs) / S (5) sh_x = (Xe−Xs) / sn_x (6) The number of shot lines sn_x may be rounded up to the decimal point.

Next, the control data file creating means 41
In step # 6, the number of shot lines sn_y in the Y direction
The shot row interval sh_y in the X direction is calculated by the following equation. sn_y = (Ye−Ys) / S (7) sh_y = (Ye−Ys) / sn_y (8) The number of shot lines sn_y may be rounded up to the decimal point.

Next, the control data file creating means 41
In step # 7, a control data file shown in FIG. 7 is created. The control data file is a data file for one irradiation area, and includes an irradiation area number, the number of data, irradiation start coordinates (X coordinates, Y coordinates), irradiation end coordinates (X coordinates, Y coordinates), and an interval in the X direction ( X distance), the number of irradiations of the pulsed laser beam, and the energy output of the melting irradiation.

Here, the number of data for one irradiation area, for example, the irradiation area number “1”, is the number of shot lines sn
_Y data, and the elements of each data are obtained as follows. The laser irradiation direction is alternately reversed to shorten the laser irradiation direction moving time.

Irradiation start position X coordinate: Xs (Xs when m is an even number, Xe when m is an odd number) Irradiation start position Y coordinate: Ys + (sh_y) × m (m: 0 to sn)
_Y -1) Irradiation end position X coordinate: Xe (Xe when m is an even number, Xs when m is an odd number) Irradiation end position Y coordinate: Ye + (sh_y) × m (m: 0 to sn)
_Y -1) X direction distance: (sh_x) Number of irradiations: (sn_x) Melting irradiation energy output is data set on the operation screen 24.

Note that (m: 0 to sn_y -1) means that m is 0 to
sn_y -1. For example, assuming that the irradiation area number “1” shown in FIG. 10 is subjected to the melting irradiation of the pulse laser beam 6, in the data (1) of the control data file shown in FIG. Y
The coordinates indicate (Xa, Ya), and the X and Y coordinates of the irradiation end position indicate (Xb, Yb).

The distance in the X direction indicates Xc, and the number of irradiations indicates the number of irradiations of one line in the X direction “6”. Therefore, the control data file creation means 41 executes step # 3
By repeating # 9, each irradiation area "1"-
Irradiation area number, data number, irradiation start coordinate (X coordinate, Y coordinate), irradiation end coordinate (X coordinate, Y coordinate), interval in X direction (X direction distance), number of irradiations of pulsed laser light for each "n" Then, the melt irradiation energy output and the like are obtained and arranged, and a control data file shown in FIG. 7 is created.

Next, the irradiation control execution means 42 executes the flow chart of the irradiation control shown in FIG. 8, and controls the operation of the laser device 5 and the XY table 8 according to the control data file created by the control data file creation means 41. Then, the semiconductor wafer 3 is irradiated with the pulse laser beam 6.

That is, the irradiation control execution means 42 first sets the irradiation area number “1” in step # 10,
In the next step # 11, the control data file created by the control data file creating means 41 is read, and in the next step # 12, the fusion irradiation energy output is read from the control data file and the data is set.

Next, the irradiation control execution means 42 executes step #
In step 13, data m is set to (1), and the following step #
At 14, data (1) in the control data file is read, and the operation of the XY table 8 is controlled according to the irradiation start position X coordinate and the irradiation start position Y coordinate of the data (1).
The pulsed laser light 6 output from the laser device 5 is applied to, for example, the X, Y coordinates (Xa, Ya) of the irradiation start position on the surface of the semiconductor wafer 3 shown in FIG.

Next, the irradiation control execution means 42 executes step #
At 15, the laser device 5 is operated, and the pulse laser 6
Output. The pulse laser 6 is reflected by the optical system 7 and irradiated to the X and Y coordinates (Xa, Ya) of the irradiation start position on the surface of the semiconductor wafer 3.

Next, the irradiation control execution means 42 executes step #
At 16, the XY table 8 is moved by one step in the X direction according to the distance in the X direction of the control data file. For example, as shown in FIG.
Move only one step.

Then, the irradiation control execution means 42 determines in step # 17 whether the number of irradiations of the pulse laser beam is larger than the file data, and if not, repeats the above steps # 15 and # 16, thereby rewriting the XY table 8. While moving one step in the X direction, the pulse laser beam 6 is irradiated on the surface of the semiconductor wafer 3 one shot at a time.

As described above, the pulsed laser beam 6 is irradiated on the surface of the semiconductor wafer 3 while the irradiation position of the pulsed laser beam 6 is moved step by step in the X direction by one shot, and the pulsed laser beam 6 is irradiated as shown in FIG. When the number reaches "6", the control for data (1) ends and the next data (2)
Move on to control.

As a result, the control for the data (2) is completed, and the control proceeds to the next data (2). As described above, the irradiation position of the pulse laser beam 6 on the semiconductor wafer 3 is step-moved in the X direction, is moved one step in the Y direction, and is step-moved again in the X direction. The locus of the area is, for example, as shown in FIG.
As shown in FIG. 0, they overlap in the X direction evenly by the width ΔX, and in the Y direction evenly overlap by the width ΔY.

When the laser fusion irradiation for the irradiation area number "1" is completed in this way, the laser fusion irradiation for the next irradiation area number "1" is executed in the same manner as described above.
Laser melting irradiation is performed on all irradiation region numbers “1” to “n”.

As described above, in the first embodiment, an input data file consisting of irradiation area position data corresponding to the size of each IC chip 4 of the semiconductor wafer 3 is created, and this input data file and each IC Based on the recipe data file indicating the size of the chip 4, a control data file for making the irradiation area of the semiconductor wafer 3 a substantially uniform irradiation condition with the pulse laser beam is created, and the pulse laser beam is generated according to the control data file. Since the semiconductor wafer 3 is irradiated with light, the position data of the irradiation area can be created in consideration of the size of each IC chip 4 on the semiconductor wafer 3, and divided into the irradiation area numbers “1” to “n”. When performing the fusion irradiation, for example, the irradiation area can be set in consideration of the size of the IC chip 4, and the IC chips 4 near the boundary of these irradiation areas are set to the same. Can laser fuse irradiation at morphism conditions.

For example, as shown in FIG. 10, the trajectories of the irradiation areas of the pulsed laser beam 6 for each shot overlap each other in the X direction by a width ΔX and in Y directions, respectively. Thus, the respective IC chips 4 can be irradiated with the same melting irradiation energy output within the same irradiation area.

In addition, according to the size of each IC chip 4, I
If the size of the unit frame of the C chip matrix coordinate system 26 is changed and set, it is possible to easily cope with test production of laser melting irradiation for various IC chips 4 and the like. (2) Next, a second embodiment of the present invention will be described.
The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

The control data file creating means 50 of the control device 40 is adapted to store the screen input data file shown in FIG.
Has a function of reading the recipe data shown in FIG. 12 and creating a control data file shown in FIG. 12 based on the screen input data file and the recipe data.

This control data file, as described above,
It is formed from the irradiation area number, the number of data, each data (1) to (m) and the melting irradiation energy output, and each data (1) to
(m) is formed from irradiation start coordinates (X coordinate, Y coordinate), irradiation end coordinates (X coordinate, Y coordinate), X direction distance, and the number of irradiations of the pulse laser beam.

For example, if the irradiation area shown in FIG.
In the laser melting irradiation of the line, the data (1) and (2) of the control data file shown in FIG. 12 are used.

In the data (1), the X and Y coordinates of the irradiation start position indicate (Xf, Yf), the X and Y coordinates of the irradiation end position indicate (Xg, Yg), and the distance in the X direction is Xh, and the number of irradiations indicates the number of irradiations “5” for one line in the X direction.

Further, in data (2), the X and Y coordinates of the irradiation start position indicate (Xg, Yg), the X and Y coordinates of the irradiation end position indicate (Xi, Yi), and the distance in the X direction is Xj, and the number of irradiations indicates the number of irradiations “1” in the X direction.

In the data (3), the X coordinate and the Y coordinate of the irradiation start position indicate (Xk, Yk). Next, the operation of laser melting irradiation according to the control data file created by the control data file creating means 50 will be described.

The pulse laser beam 6 is irradiated from the irradiation start position (Xf, Yf) on the surface of the semiconductor wafer 3 to the irradiation end position (X
g, Yg) X direction distance X including the irradiation start position
Irradiation is performed on the surface of the semiconductor wafer 3 one shot at a time every step movement of h.

When reaching the irradiation end positions (Xg, Yg) and (Xi, Yi) near one end of the irradiation region in the X direction, the pulse laser light 6 The positions of the irradiation regions in the directions (Xg, Yg) and (Xi, Yi) are partially overlapped and irradiation is performed.

Next, the pulsed laser beam 6 has a distance Yk in the Y direction.
From the irradiation start position (Xk, Yk), which has been moved only stepwise, the semiconductor wafer 3 is irradiated one shot at a time every step movement by the X-direction distance Xh, including the irradiation start position.

As described above, also in the second embodiment, the position data of the irradiation area can be created in consideration of the size of each IC chip 4 on the semiconductor wafer 3, and the irradiation area numbers "1" to "n" When performing laser melting irradiation
For example, the irradiation area can be set in consideration of the size of the IC chip 4, and the IC chip 4 near the boundary of these irradiation areas can be laser-irradiated under the same irradiation conditions.

The present invention is not limited to the first and second embodiments, but may be modified as follows. For example, the present invention is not limited to laser melting irradiation on the semiconductor wafer 3, but can be applied to any object to be irradiated with pulsed laser light evenly.

[0086]

As described in detail above, claims 1 to 5 of the present invention.
According to No. 4, the irradiation area can be set in consideration of the size of the IC chip when the laser irradiation is divided into a plurality of irradiation areas, and the IC chip near the boundary of the irradiation area can be irradiated by the laser irradiation under the same irradiation condition. A laser melting irradiation device can be provided.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of a laser melting irradiation apparatus according to the present invention.

FIG. 2 is a schematic diagram showing an operation screen of a screen input device in the same device.

FIG. 3 is a view showing setting of a laser beam irradiation area in the apparatus.

FIG. 4 is a schematic diagram of a screen input data file.

FIG. 5 is a schematic diagram of a recipe data file.

FIG. 6 is a flowchart for converting a screen input data file into a control data file.

FIG. 7 is a schematic diagram of a control data file.

FIG. 8 is a flowchart of irradiation control.

FIG. 9 is a diagram illustrating an operation of obtaining start point absolute position coordinates and end point absolute position coordinates.

FIG. 10 is a diagram showing correspondence between each data of a control data file and pulse laser irradiation.

FIG. 11 is a configuration diagram showing a second embodiment of the laser fusion irradiation apparatus according to the present invention.

FIG. 12 is a schematic diagram of a control data file.

FIG. 13 is a diagram showing correspondence between each data of a control data file and pulse laser irradiation.

FIG. 14 is a view showing a part of the manufacturing process of the semiconductor wafer;

FIG. 15 is a configuration diagram of a conventional laser melting irradiation apparatus.

FIG. 16 is a diagram showing a case where the size of each of the divided irradiation areas and the size of the IC chip match.

FIG. 17 is a diagram showing a case where the sizes of the divided irradiation areas and the IC chip do not match.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 3 ... Semiconductor wafer, 4 ... IC chip, 5 ... Laser device, 7 ... Optical system, 8 ... XY table, 20 ... Screen input device, 40 ... Control device, 41,50 ... Control data file creation means, 42 ... Irradiation control Execution means.

Claims (4)

[Claims] 1. A laser melting irradiation apparatus for irradiating a laser beam to a processing object on which a plurality of regions are set to melt the processing object, wherein the laser melting irradiation apparatus irradiates the processing object with a laser beam. Input means for creating an input data file consisting of irradiation area position data corresponding to the size of the area of each area irradiated with the laser light; and an input data file created by the input means and at least the object to be processed. Based on a recipe data file indicating the size of the area of each region irradiated with the laser light, a control data file for setting the laser light to substantially uniform irradiation conditions on each region of the object to be processed is created. A control data file creating unit that performs the control of the laser beam according to the control data file created by the control data file creating unit. An irradiation means for irradiating the processing object with a laser melting irradiation apparatus. 2. The input means displays an outline of the object to be processed and a coordinate system indicating each region of the object to be superimposed on each other, and laser-processes the object according to the outline and the coordinate system. 2. The apparatus according to claim 1, further comprising a function of setting irradiation area position data including at least a start point and an end point for laser melting irradiation of the object to be processed and the melting irradiation energy output data for each of the areas to be melted and irradiated. Laser melting irradiation equipment. 3. The control data file creating means irradiates the object with the laser beam based on the input data file and a recipe data file indicating at least the size of each area of the object. Start coordinates,
2. The laser melting and irradiating apparatus according to claim 1, further comprising a function of creating a control data file including an end coordinate, an interval of irradiating the laser beam onto the object to be processed, and an irradiation number of the laser beam. 4. A laser melting and irradiating apparatus for irradiating a semiconductor wafer on which a plurality of semiconductor chips are formed with a pulsed laser beam to melt the semiconductor wafer with a laser beam, wherein an outline drawing of the semiconductor wafer and the laser of each of the semiconductor chips are provided. A coordinate system corresponding to the size of the area irradiated with light is displayed in a superimposed manner, and for each region where the semiconductor wafer is subjected to laser melting irradiation according to these outline drawings and the coordinate system,
An input means having at least a function of setting irradiation area position data including a start point and an end point of laser melting irradiation of the semiconductor wafer and the melting irradiation energy output data; and irradiating the input data file and at least the semiconductor chip with the laser light. Start coordinates, end coordinates, intervals for irradiating the pulsed laser light on the semiconductor wafer surface, and the pulse for irradiating the semiconductor wafer with the pulsed laser light based on the recipe data file indicating the size of the area to be irradiated. Control data file creating means for creating a control data file comprising the number of laser light irradiations; irradiating means for irradiating the semiconductor wafer with the pulse laser light according to the control data file created by the control data file creating means; Laser melting characterized by having Irradiation apparatus.