JPH1056057A - Thin board holder - Google Patents

Abstract

PROBLEM TO BE SOLVED: To impart a thin board holder with in abrasive resistance function and anti-static measures. SOLUTION: A wafer carrier 1 is capable of supporting a large number of wafers at the same time, wherein a function thin film 15 is formed on all or a part of the surface of the wafer carrier main body. The function thin film 15 is formed of one or more elements selected out of Si, Ti, Sn, In, Al, Au, Ag, Cu, Sb, W, Ge, PPV or PPP. By this constitution, the wafer carrier 1 formed of single material can be given several functions.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-plate support for simultaneously supporting a plurality of thin plates such as semiconductor wafers and performing storage, transport, cleaning, and the like.

[0002]

2. Description of the Related Art A semiconductor wafer carrier using a semiconductor wafer as a thin plate, for example, is known as a thin plate support for simultaneously storing and transporting a plurality of thin plates. This semiconductor wafer carrier is formed by injection molding or the like using a single synthetic resin as a material. As this material, plastics having a high dielectric strength may be used, but in this case, it is necessary to impart conductivity or to take measures against static electricity for modification.

[0003] As an example of this, there is one that performs the following treatment on a base resin.

(1) A molded article is prepared by compounding a conductive filler (mainly carbon particles, carbon fibers, and other inorganic substances).

(2) A molded product is prepared by kneading a synthetic resin with a surfactant such as an organic fatty acid.

(3) A synthetic resin having high hydrophilicity or high water absorbency is selected as a filler, and a fatty acid or a metal salt is impregnated into a polymer alloy to form a molded article.

(4) A conductive material is applied to the molded product.

[0008]

However, when the above measures are taken, the molding efficiency is poor and there is a problem in dimensional stability during molding. Further, in the case of application, there is a problem that the material applied at the time of cleaning melts out and the effect is not maintained.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide a thin plate support capable of taking measures against static electricity and providing a function such as abrasion resistance regardless of the type of material. With the goal.

[0010]

According to a first aspect of the present invention, there is provided a thin-plate support for simultaneously supporting a large number of thin plates, wherein a functional thin film is formed on the entire surface of the main body or partially. It is characterized by having done.

[0011] With the above structure, the thin plate support made of a single material can have various functions.
In other words, the structure of a single member and the properties of the surface were also determined by the material, but by adjusting the material of the functional thin film, various functions such as conductivity, durability, and abrasion resistance were achieved. Can be demonstrated.

According to a second aspect of the present invention, the functional thin film comprises Si,
Ti, Sn, In, Al, Au, Ag, Cu, Sb,
It is characterized by comprising one or more of W, Ge, PPV and PPP.

These materials are formed as thin films on the surface of a thin plate support by a method such as a vacuum evaporation method. By forming a thin film from these materials, a thin film having characteristics and functions of each material can be obtained. Thereby, excellent effects can be obtained in an environment such as a clean room where a precise element such as a semiconductor wafer is formed.

[0014]

Embodiments of the present invention will be described below with reference to the accompanying drawings. The thin plate support of the present invention supports a plurality of thin plates such as a semiconductor wafer, a storage disk, and a liquid crystal plate in parallel. The thin plate supports include those in the form of a container and those in the form of no container (divided into a support base and a support claw). Hereinafter, an example in which a semiconductor wafer is used as a thin plate and a semiconductor wafer carrier in the form of a container is used as a thin plate support will be described.

[First Embodiment] As shown in FIG. 1, a semiconductor wafer carrier 1 according to the present embodiment has an opening on one side, and a wafer introduction / exiting port 2A for introducing and leading out a semiconductor wafer (not shown). And a plurality of semiconductor wafers provided in multiple stages on the inner surface of two opposing side walls 3 (only one is shown in FIG. 1) of the housing 2. And supporting ribs 4 that are stored and supported in multiple stages.

The two opposing side walls 3 of the housing 2 are connected and supported by an upper end wall 6 and a lower end wall 7. The housing 2 is placed vertically with the lower end wall 7 side down.
On one side of each side wall 3 (left side in FIG. 1), there is provided a horizontal support plate portion 8 for supporting the housing 2 so that the semiconductor wafer supported inside is horizontal. The rear end of the side wall 3 (FIG. 1)
A foot 3A is provided at the lower end in the middle).

The supporting ribs 4 are composed of a large number of rib pieces 4A provided in parallel at regular intervals inside the side wall 3. The support rib 4 is provided with an introduction portion 10 located on the wafer introduction exit 2A side, a matching portion 11 located on the back side of the introduction portion 10, and a rearmost position, which regulates a wafer insertion limit. Back support 1 for supporting the wafer from the back
And 2.

The accuracy between the opposing side surfaces of each rib piece 4A located at the introduction portion 10 is formed so as to be largely open. This is to make it possible to easily introduce or take out the wafer.

In the semiconductor wafer carrier 1 having the above structure,
The functional thin film 15 is applied to the entire surface or a part thereof. This functional thin film 15 has conductivity, abrasion resistance,
It is applied to give various functions according to each use, place, etc. such as durability, heat resistance, chemical resistance and the like. Materials for the functional thin film 15 include Si, Ti, Sn, In, and A.
Conductive metals such as l, Au, Ag, Cu, Sb, W, and Ge are used alone or in combination. Also,
A conductive synthetic resin such as PPV (polyphenylene pinylene) or PPP (polyparaphenylene) may be used.

The functional thin film 15 is formed by various thin film forming methods such as a vacuum evaporation method, a sputtering method, an ion plating method, a CVD method, and a chemical plating method. In particular, when the functional thin film 15 is formed by the ion plating method, a good functional thin film 15 can be formed by using a “gas-free ion plating apparatus” described in Japanese Patent Publication No. Hei. Can be.

In the case where the functional thin film 15 is partially applied and the conductivity and wear resistance are intended, particularly, the support rib 4 which is a portion which is in direct contact with other members, the horizontal support plate The portion 8 is applied to a place such as the foot 3A of the side wall 3.

In the semiconductor wafer carrier 1 configured as described above, when the semiconductor wafer is taken in and out in a clean room, and when the semiconductor wafer carrier 1 itself is transported by a robot, the functional thin film 15 is applied to the semiconductor wafer carrier 1 to prevent static electricity. To solve the problem. That is, when the functional thin film 15 is not applied, the surface of the semiconductor wafer carrier 1 is charged with static electricity and adsorbs impurities, and the impurities may adhere to the surface of the internal semiconductor wafer. When the functional thin film 15 is applied, the intrinsic resistance of the surface of the semiconductor wafer carrier 1 decreases, the accumulation of static electricity decreases, and the semiconductor wafer carrier 1 adsorbs impurities such as ultrafine particles on the surface. Disappears.

Even if the semiconductor wafer carrier 1 comes into contact with another member, generation of impurities due to abrasion at the contact portion hardly occurs. As a result, the yield of the semiconductor wafer is also improved.

When the functional thin film 15 is applied to the surface of the semiconductor wafer carrier 1 by a vacuum evaporation method or the like, the type of the synthetic resin serving as the base is not limited. For this reason, the functional thin film 15 can be applied to a synthetic resin which is easy to use in a production site such as a semiconductor, and the performance can be freely controlled to a required performance (for example, a surface resistance of 10 ⁵ to 10 ¹⁰ Ωcm). Can be.

Since the material of the semiconductor wafer carrier 1 can be selected in consideration of the originally required functions and ease of use without considering the modification of the material itself, the molding efficiency is greatly improved. And the dimensional stability is also greatly improved.

According to the vacuum evaporation method or the like, since the adhesion between the synthetic resin of the substrate and the functional thin film 15 is high, the thin film 15 does not fall off or dissolve into the cleaning liquid or the like.

When the functional thin film 15 is applied to the semiconductor wafer carrier 1 used in a clean room where generation of slight impurities is not allowed, there is an excellent effect which cannot be expected in a normal use state. For example,
When the functional thin film 15 having excellent wear resistance is applied, abrasion of the semiconductor wafer carrier 1 itself can be prevented, and generation of impurities due to abrasion can be suppressed. As a result, the yield of semiconductor wafers can be improved while suppressing the generation of impurities.

The relationship between the material used for the functional thin film 15 and its function is as follows.

"Si" Thin film 15 formed of this Si
Is a thin film 1 formed by oxidation
Since the oxide on the surface of the semiconductor wafer carrier 5 is also semiconductive, if the Si thin film 15 is formed on the surface of the semiconductor wafer carrier 1, the specific resistance of the surface of the semiconductor wafer carrier 1 is reduced, and the accumulation of static electricity is reduced. . As a result, it is possible to prevent the semiconductor wafer carrier 1 from adsorbing ultrafine particles on its surface and to adhere to the semiconductor wafer surface.

Further, when a thin film 15 of Si is formed on a portion of the semiconductor wafer carrier 1 which is in contact with the semiconductor wafer, those which are in contact with each other are made of the same material. The phenomenon of abrasion can be eliminated and generation of impurities can be suppressed.

[Ti] In the case of Ti, similarly to the case of Si, the thin film 15 formed by this is a good electrical conductor, and the oxide on the surface of the thin film 15 formed by oxidation is also semiconductive. When the thin film 15 of Ti is formed, the specific resistance value is reduced and the accumulation of static electricity is reduced. As a result, the attachment of the ultrafine particles to the surface of the semiconductor wafer can be suppressed.

In the case of Ti, the wear resistance is excellent. If the semiconductor wafer carrier is applied to a portion where the arm of the robot comes in contact with the robot when the semiconductor wafer carrier is transferred by the robot, the portions come into contact with each other and become worn. Thus, generation of impurities can be suppressed. As a result, it is possible to prevent impurities from adhering to the surface of the semiconductor wafer.

"Sn" In the case of Sn, as in the case of the Si, the thin film 15 formed by this is a good electrical conductor, and the oxide on the surface of the thin film 15 is also semiconductive.
When the n thin film 15 is formed, the specific resistance value is reduced and the accumulation of static electricity is reduced. As a result, the attachment of the ultrafine particles to the surface of the semiconductor wafer can be suppressed.

"In" The case of In is the same as that of Si. Since the thin film 15 formed of In is an electric conductor and the oxide on the surface of the thin film 15 is also semiconductive, if the In thin film 15 is formed, the specific resistance value decreases and the accumulation of static electricity is reduced. It is possible to reduce the number of particles and to prevent the ultrafine particles from adhering to the surface of the semiconductor wafer.

"Al" The case of Al is the same as that of Si. Since the thin film 15 formed of Al is a good electrical conductor and the oxide on the surface of the thin film 15 is also semiconductive, forming the Al thin film 15 lowers the specific resistance and reduces the accumulation of static electricity. It is possible to reduce the number of particles and to prevent the ultrafine particles from adhering to the surface of the semiconductor wafer.

In the process of processing the semiconductor wafer, various acidic or alkaline chemicals are used, so that the oxide film is removed by these chemicals, leaving only the thin film 15 which is a good electrical conductor. As a result, the accumulation of static electricity can be reduced more efficiently.

[Au] Thin film 15 formed of this Au
Is a good electrical conductor, no oxide is formed on the surface of the thin film 15, and it is not eroded by various acidic or alkaline chemicals used in the semiconductor wafer processing step. A on the surface of
When a thin film 15 of u is formed, a stable film having excellent corrosion resistance is obtained. As a result, the semiconductor wafer carrier 1 can be used in the entire process, and the specific resistance of the surface of the semiconductor wafer carrier 1 is reduced, and the accumulation of static electricity is reduced. As a result, it is possible to prevent the semiconductor wafer carrier 1 from adsorbing ultrafine particles on its surface and to adhere to the semiconductor wafer surface.

"Ag" The case of Ag is the same as that of Si. Since the thin film 15 formed of Ag is a good electrical conductor and the oxide on the surface of the thin film 15 is also semiconductive, the formation of the Ag thin film 15 lowers the specific resistance value and the accumulation of static electricity. It is possible to reduce the number of particles and to prevent the ultrafine particles from adhering to the surface of the semiconductor wafer.

"Cu" The case of Cu is the same as that of Si. Since the thin film 15 formed of Cu is an electric conductor and the oxide on the surface of the thin film 15 is also semiconductive, the formation of the Cu thin film 15 lowers the specific resistance and reduces the accumulation of static electricity. It is possible to reduce the number of particles and to prevent the ultrafine particles from adhering to the semiconductor wafer surface.

"Sb" The case of Sb is the same as that of Si. Since the thin film 15 formed of Sb is a good electrical conductor and the oxide on the surface of the thin film 15 is also semiconductive, forming the thin film 15 of Sb reduces the specific resistance value and the accumulation of static electricity. It is possible to reduce the number of particles and to prevent the ultrafine particles from adhering to the surface of the semiconductor wafer.

"W" The case of W is the same as that of Si. The thin film 15 formed of W is a good electrical conductor, and the oxide on the surface of the thin film 15 is also semiconductive.
When the thin film 15 is formed, the specific resistance value is reduced, the accumulation of static electricity is reduced, and the attachment of ultrafine particles to the surface of the semiconductor wafer can be suppressed.

In the case of W, the abrasion resistance is excellent. If the semiconductor wafer carrier is applied to a portion where the arm of the robot comes into contact with the robot when the semiconductor wafer carrier is transferred by the robot, the portions come into contact with each other and become worn. Thus, generation of impurities can be suppressed. As a result, it is possible to prevent impurities from adhering to the surface of the semiconductor wafer.

"Ge" The case of Ge is the same as that of Si. Since the thin film 15 formed of Ge is an electric conductor and the oxide on the surface of the thin film 15 is also semiconductive, the formation of the Ge thin film 15 reduces the specific resistance value and the accumulation of static electricity. It is possible to reduce the number of particles and to prevent the ultrafine particles from adhering to the surface of the semiconductor wafer.

"PPV, PPP" This PPV or PPP
Since the thin film 15 formed by the method described above is an electric conductor, the PPV or PPP thin film 1 is formed on the surface of the semiconductor wafer carrier 1.
When 5 is formed, the specific resistance value on the surface of the semiconductor wafer carrier 1 decreases, and the accumulation of static electricity decreases. As a result,
It is possible to prevent the semiconductor wafer carrier 1 from adsorbing ultrafine particles on its surface and to adhere to the surface of the semiconductor wafer.

Further, since the thin film 15 formed of PPV or PPP is flexible, there is little possibility that the surface or a part of the thin film 15 will be peeled off or detached by accidental impact such as contact. Generation is suppressed.

[Second Embodiment] Next, a second embodiment of the present invention will be described. The thin-plate support of the present invention does not take the form of a container for accommodating a semiconductor wafer, but includes a claw for supporting and transporting the semiconductor wafer, and a base for supporting the semiconductor wafer in a chemical tank or the like. . That is, the thin plate support of the present embodiment includes a pair of thin plate supporting claws, an apparatus main body to which the thin plate supporting claws are attached, and a thin plate supporting base (none of them is shown).

The thin plate supporting claws are for simultaneously supporting and transporting a plurality of semiconductor wafers (not shown) arranged in parallel. A large number of notches for supporting at the same time are provided in parallel.

The thin plate support is immersed in a chemical bath, a pure water bath, or the like, and supports a large number of semiconductor wafers transported by a pair of thin plate support claws while being immersed in the chemical bath or the like. . On the thin plate support, four support rods are arranged in parallel and along the arc shape of the outer peripheral edge of the semiconductor wafer. These four support bars are provided with support notches similar to those described above.

The thin plate supporting claws and the thin plate supporting base are formed of a synthetic resin. As the synthetic resin, the same fluororesin as the ordinary semiconductor wafer carrier 1, PEEK (polyetheretherketone) capable of maintaining sufficient strength for a large semiconductor wafer, or the like is used.

As in the first embodiment, the functional thin film 15 is applied to the entire surface of the thin plate supporting claw and the thin plate supporting base or only to the support notch. Is done. Here, in order to make the functional thin film 15 have conductivity, abrasion resistance and chemical resistance, Ti and Au or W or W are used.
And Au are used as a mixture.

In the thin plate support constructed as described above,
In a semiconductor wafer manufacturing line or the like, a thin plate support is immersed in a chemical solution tank, a pure water tank, or the like. A pair of thin plate supporting claws attached to the apparatus body fit and support a large number of semiconductor wafers and transfer them.

The semiconductor wafer transferred by the pair of thin plate supporting claws is directly immersed in the chemical solution tank or the like and placed on the four supporting rods of the thin plate supporting table. Each semiconductor wafer is fitted and supported in a support notch of each support rod and immersed in a chemical solution tank or the like for a predetermined time. Thereafter, the sheet is supported by the thin plate supporting claws, lifted, and transferred to the next processing step.

At this time, the semiconductor wafer comes into contact with the support notch of the thin plate supporting claw and the support notch of the four support rods, respectively. However, since the functional thin film 15 has abrasion resistance,
The same operation and effect as in the above embodiment can be obtained by suppressing generation of impurities.

Further, since the functional thin film 15 is provided with chemical resistance, even if the thin plate supporting claw or the thin plate supporting base is immersed in the chemical solution tank, the chemical solution will not be attacked.

By the way, the thin plate supporting claw and the thin plate supporting base are connected to PE.
When molded with EK, the PEEK itself has abrasion resistance and chemical resistance, so there is little need to apply the functional thin film 15. However, when molded with another synthetic resin, the functional thin film 15 is not required. By performing the above, it is possible to obtain excellent wear resistance and chemical resistance, and the above-described excellent effects can be obtained when used in a clean room or the like.

[0056]

As described in detail above, according to the thin-plate support of the present invention, the following effects can be obtained.

Since the functional thin film is applied to the entire surface of the main body surface of the thin plate support or partially, a thin plate support excellent in the functions of the thin film, for example, conductivity, durability, chemical resistance, etc. Can be provided.

As a result, even when the thin-layer support provided with the functional thin film is used in a clean room or the like in which generation of very small particles is not allowed, even if the function is a common function in general use. An excellent effect which cannot be expected in ordinary use can be obtained. That is, since the functional thin film has conductivity, even a slight accumulation of static electricity can be eliminated, and adsorption of ultrafine particles can be suppressed. When a functional thin film having excellent wear resistance is applied, the wear of the thin plate support itself can be prevented, and the generation of ultrafine particles due to the wear can be suppressed. As a result, apart from the original function of the functional thin film, a function of improving the yield of the semiconductor wafer is provided.

[Brief description of the drawings]

FIG. 1 is a partial perspective view showing a semiconductor wafer carrier according to the present invention.

[Explanation of symbols]

1: semiconductor wafer carrier, 2: housing, 3: side wall, 4:
Supporting rib, 15: functional thin film.

Claims (2)

[Claims] 1. A thin plate support for simultaneously supporting a large number of thin plates, wherein a functional thin film is provided on the entire surface of the main body or partially. 2. The support for a thin plate according to claim 1, wherein the functional thin film is made of Si, Ti, Sn, In, Al, A.
A support for a thin plate, comprising at least one of u, Ag, Cu, Sb, W, Ge, PPV and PPP.