JPH1051047A - Hall element - Google Patents
Hall elementInfo
- Publication number
- JPH1051047A JPH1051047A JP8205938A JP20593896A JPH1051047A JP H1051047 A JPH1051047 A JP H1051047A JP 8205938 A JP8205938 A JP 8205938A JP 20593896 A JP20593896 A JP 20593896A JP H1051047 A JPH1051047 A JP H1051047A
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- JP
- Japan
- Prior art keywords
- thin film
- hall element
- magnetic sensing
- boundary
- unbalanced voltage
- Prior art date
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- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はホール素子に関し、
特に不平衡電圧が小さく、その素子間のばらつきが小さ
いホール素子に関する。TECHNICAL FIELD The present invention relates to a Hall element,
In particular, the present invention relates to a Hall element having a small unbalanced voltage and a small variation between the elements.
【０００２】[0002]
【従来の技術】ホール素子は、ＶＴＲ、フロッピーディ
スク、ＣＤ−ＲＯＭ等のドライブモータ用の回転位置検
出センサとして広く用いられている。モータの小型化に
伴って、Ｓ／Ｎ比の大きいホール素子の要求が益々強ま
っている。2. Description of the Related Art Hall elements are widely used as rotational position detection sensors for drive motors such as VTRs, floppy disks and CD-ROMs. With the miniaturization of motors, the demand for Hall elements having a large S / N ratio has been increasing.
【０００３】高感度にすれば自ずとＳ／Ｎ比が高くな
る。そうした高感度ホール素子のペレットは、高透磁率
強磁性体基板の上に移動度の高い半導体薄膜が配置さ
れ、さらにその上にほぼ直方体の磁気集束用磁性体チッ
プが載せられている構造体をなしている。例えば、特公
昭５１−４５２３４号公報には、ホール移動度の高い薄
膜をこの構造体中に配置するための方法が示されてい
る。すなわち、まず雲母などの結晶性基板上に化合物半
導体薄膜を形成し、この化合物半導体薄膜をエポキシ等
の接着剤を用いて高透磁率強磁性体基板に接着した後、
結晶性基板を除去し、半導体薄膜に所望のパターンを形
成し、次いで接着剤で半導体薄膜の感磁部の上に磁気集
束用磁性体チップを載せることによって積層構造体を形
成する方法である。When the sensitivity is increased, the S / N ratio naturally increases. The pellet of such a high-sensitivity Hall element is a structure in which a high-mobility semiconductor thin film is disposed on a high-permeability ferromagnetic substrate, and a substantially rectangular parallelepiped magnetic chip for magnetic focusing is mounted thereon. No. For example, Japanese Patent Publication No. 51-45234 discloses a method for disposing a thin film having high hole mobility in this structure. That is, first, a compound semiconductor thin film is formed on a crystalline substrate such as mica, and the compound semiconductor thin film is bonded to a high-permeability ferromagnetic substrate using an adhesive such as epoxy,
This is a method in which a crystalline substrate is removed, a desired pattern is formed on a semiconductor thin film, and a magnetic chip for magnetic focusing is mounted on a magnetically sensitive portion of the semiconductor thin film with an adhesive to form a laminated structure.
【０００４】一方、高透磁率強磁性体基板の表面に特定
の絶縁層を形成した後、半導体薄形成法を改良して半導
体薄膜を形成し、感磁部上に同様に磁気集束用磁性体チ
ップを付けて上述した構造体とする方法も提案されてい
る。On the other hand, after a specific insulating layer is formed on the surface of a high-permeability ferromagnetic substrate, a semiconductor thin film is formed by improving the semiconductor thin film forming method, and a magnetic material for magnetic focusing is similarly formed on the magnetic sensing portion. There has also been proposed a method of attaching the chip to the above-described structure.
【０００５】また、近年、ホール素子の高感度化の要求
と相まって、ノイズレベル低減化の要求が強まってきて
いる。ここで、ホール素子でのノイズレベルは不平衡電
圧の値によって決まる。[0005] In recent years, along with the demand for higher sensitivity of the Hall element, the demand for lowering the noise level has been increasing. Here, the noise level in the Hall element is determined by the value of the unbalanced voltage.
【０００６】ところが、上述のようにして形成したペレ
ットを使用してホール素子を作製し、その不平衡電圧を
調べたところ、素子によってばらつきがあり、不平衡電
圧が極めて小さいものからかなり大きなものまで種々存
在した。However, when a Hall element was manufactured using the pellets formed as described above and the unbalanced voltage thereof was examined, there was a variation depending on the element, and the unbalanced voltage varied from extremely small to extremely large. There were various.
【０００７】[0007]
【発明が解決しようとする課題】図３は、通常使用され
るペレットの感磁部パターンの一例を示すものである。
基板１上に絶縁膜２が形成され、その上に、十字状の感
磁部３とその４隅に電極部４を有するパターンが形成さ
れ、電極部４にはボンディング電極層が形成されてい
る。感磁部３と電極部４の境界は直線状になっている。FIG. 3 shows an example of a pattern of a magnetic sensing part of a commonly used pellet.
An insulating film 2 is formed on a substrate 1, and a pattern having a cross-shaped magnetic sensing portion 3 and electrode portions 4 at four corners thereof is formed thereon, and a bonding electrode layer is formed on the electrode portion 4. . The boundary between the magnetic sensing part 3 and the electrode part 4 is linear.
【０００８】このような通常のホール素子において、不
平衡電圧は、半導体薄膜の組成や膜厚が均一でない時や
パターンがいびつなときに発生することは知られてい
る。しかし、そうでない時にも大きな不平衡電圧を示す
ものがあることが分かった。It is known that in such ordinary Hall elements, an unbalanced voltage is generated when the composition and thickness of the semiconductor thin film are not uniform or when the pattern is irregular. However, it has been found that even when this is not the case, some devices exhibit a large unbalanced voltage.
【０００９】そこで、本発明は不平衡電圧が小さく、し
かもそのばらつきの範囲が狭いホール素子を提供するこ
とを目的とする。Accordingly, an object of the present invention is to provide a Hall element having a small unbalanced voltage and a narrow range of variation.
【００１０】[0010]
【課題を解決するための手段】本発明者らは、上記不平
衡電圧のばらつきがなぜ起こるのかを、種々のパターの
マスクを試作して種々の形状の感磁部を有するペレット
を作製し、感磁部パターンと不平衡電圧のばらつきとの
対応関係を調査した。その結果、感磁部と電極部との境
界の形状が不平衡電圧のばらつきを決定する一つの重要
な因子であることを見出した。図３に示したように直線
であった感磁部と電極部の形状を変えると不平衡電圧の
ばらつきが変わること、およびそのばらつきの範囲が狭
くなる条件があることを見出して本発明をなすに至った
ものである。Means for Solving the Problems The inventors of the present invention prepared a prototype of masks of various putters and produced pellets having magneto-sensitive portions of various shapes by examining why the unbalanced voltage variation occurred. The correspondence between the magneto-sensitive pattern and the variation of the unbalanced voltage was investigated. As a result, it has been found that the shape of the boundary between the magnetic sensing part and the electrode part is one important factor that determines the variation of the unbalanced voltage. When the shapes of the magnetic sensing part and the electrode part, which are linear as shown in FIG. 3, are changed, the variation of the unbalanced voltage is changed, and the present invention is found to have a condition that the range of the variation is narrowed. It has been reached.
【００１１】即ち、本発明によるホール素子は、基板
と、該基板上に形成されパターニングされた感磁部と電
極部を有する半導体薄膜とを有するホール素子であっ
て、前記感磁部と前記電極部の境界の形状が該感磁部の
中心から見て凸状になっていることを特徴とする。That is, a Hall element according to the present invention is a Hall element having a substrate, a patterned magnetically sensitive portion formed on the substrate, and a semiconductor thin film having an electrode portion. The shape of the boundary of the part is convex when viewed from the center of the magnetically sensitive part.
【００１２】感磁部を構成する半導体薄膜は、インジウ
ムアンチモン、インジウム砒素、ガリウム砒素等の化合
物半導体から選択できる。これらのうち、高感度ホール
素子に特に適しているのは移動度の高いインジウムアン
チモン系化合物半導体薄膜である。ここで、インジウム
アンチモン系化合物半導体とは、一般式Ｉｎ1-x ＶXＳ
ｂ1-y Ｗy （ただし、ＶはＧａ、Ａｌの１種または２
種、Ｗは燐、砒素の１種または２種、ｘおよびｙはそれ
ぞれ０〜０．５）で表される化合物半導体である。これ
らの化合物半導体を感磁部とするホール素子がセンサと
して機能するためには、実用上の抵抗値を確保する必要
があり、厚みを０．５〜１．５μｍ程度に薄膜化するこ
とが必須の要件である。もちろん、高感度を確保するた
めに、高い移動度も当然必要である。本発明者らは、こ
の系の高移動度化の方法を種々提案してきたが、これら
の方法により作成した半導体薄膜を本発明に好適に適用
できる（特公平１−１３２１１号公報、特公平１−１５
１３５号公報、特公平２−４７８４９号公報、特公平２
−４７８５０号公報、特公平３−５９５７１号公報参
照）。The semiconductor thin film constituting the magnetic sensing portion can be selected from compound semiconductors such as indium antimony, indium arsenide, and gallium arsenide. Among these, an indium-antimony-based compound semiconductor thin film having high mobility is particularly suitable for the high-sensitivity Hall element. Here, the indium-antimony-based compound semiconductor is represented by a general formula In 1-x V X S
b 1-y W y (where V is one or two of Ga and Al)
The species, W, is one or two of phosphorus and arsenic, and x and y are each a compound semiconductor represented by 0 to 0.5). In order for a Hall element having such a compound semiconductor as a magnetic sensing part to function as a sensor, it is necessary to secure a practical resistance value, and it is essential to reduce the thickness to about 0.5 to 1.5 μm. Requirements. Of course, a high mobility is naturally necessary to ensure high sensitivity. The present inventors have proposed various methods of increasing the mobility of this system, but a semiconductor thin film formed by these methods can be suitably applied to the present invention (Japanese Patent Publication No. 1-13211, Japanese Patent Publication No. -15
No. 135, Japanese Patent Publication No. 2-47849, Japanese Patent Publication No. 2
-47850, JP-B-3-59571).
【００１３】非常に高感度なホール素子にするには、前
述したように、基板に高透磁率強磁性体を用い、半導体
薄膜の感磁部の上にさらに磁気集束用磁性体チップを載
せる構造にするのが一つの態様である。この場合にも本
発明の感磁部パターンが有効であって、非常に高いＳ／
Ｎ比を有するホール素子とすることができる。As described above, in order to make a Hall element with extremely high sensitivity, a structure in which a high magnetic permeability ferromagnetic material is used for a substrate and a magnetic material chip for magnetic focusing is further mounted on a magnetically sensitive portion of a semiconductor thin film. Is one embodiment. Also in this case, the magnetic sensing portion pattern of the present invention is effective, and has a very high S /
A Hall element having an N ratio can be obtained.
【００１４】基板の材料としては、パーマロイ、鉄珪素
合金、Ｍｎ−Ｚｎフェライト等の高透磁率磁性体、ある
いはアルミナその他のセラミックス等の非磁性体を用い
ることができる。As a material of the substrate, a high magnetic permeability material such as permalloy, iron-silicon alloy, Mn-Zn ferrite, or a non-magnetic material such as alumina or other ceramics can be used.
【００１５】[0015]
【発明の実施の形態】図１および図２は、本発明の実施
例としてのホール素子の平面図である。1 and 2 are plan views of a Hall element according to an embodiment of the present invention.
【００１６】基板１上に樹脂あるいはガラス、ＳｉＯ2
等の無機物からなる絶縁層２を介して、感磁部となる半
導体層が形成され、この半導体層の所定部分に所定パタ
ーンの感磁部３が形成され、感磁部３とつながる半導体
層上に電極部４として金属膜が形成されている。電極部
４の一部にはさらにボンディング用電極層５が付けられ
ている態様となっている。ただし、絶縁層２は必須の要
件ではなく、基板１が例えばセラミックスからなる場合
には省略することができる。感磁部３と電極部４の境界
の形状が図３に示した従来例と異なり、感磁部の中心か
ら見て凸状になっているのが特徴である。こうした形状
にすることによって、不平衡電圧の素子間のばらつきを
小さくすることができる。興味深いことに、感磁部３と
電極部４の境界の形状が図１および図２とは逆に感磁部
の中心から見て凹状になると、直線状の場合より不平衡
電圧のばらつきが悪くなった。Resin or glass, SiO 2 on substrate 1
A semiconductor layer serving as a magnetic sensing portion is formed via an insulating layer 2 made of an inorganic material such as an inorganic material. A magnetic sensing portion 3 having a predetermined pattern is formed in a predetermined portion of the semiconductor layer. In addition, a metal film is formed as the electrode part 4. In this embodiment, a bonding electrode layer 5 is further provided on a part of the electrode portion 4. However, the insulating layer 2 is not an essential requirement, and can be omitted when the substrate 1 is made of, for example, ceramics. Unlike the conventional example shown in FIG. 3, the shape of the boundary between the magnetically sensitive portion 3 and the electrode portion 4 is characterized by being convex when viewed from the center of the magnetically sensitive portion. By adopting such a shape, the variation of the unbalanced voltage between the elements can be reduced. Interestingly, when the shape of the boundary between the magnetic sensing part 3 and the electrode part 4 is concave as viewed from the center of the magnetic sensing part, contrary to FIGS. became.
【００１７】ところで、感磁部の長さとその幅が素子の
抵抗値と感度を決める。例えば、厚みが大きく抵抗値の
低い半導体薄膜を基準の抵抗値にするためには、長さを
長く幅を小さくしなければならないが、そうすると感度
が低くなる。本発明のように、感磁部と電極部の境界が
曲線状の場合には、直線状の場合とは当然異なってく
る。この場合の長さは、最長（感磁部幅の中央の長さ）
と最短（感磁部幅方向端部の長さ）のほぼ中間の値を用
いてパターンを設計することができる。正確には、感磁
部と電極部の境界の形状に依存するので、試作によって
マスクパターンを決定することが必要である。Incidentally, the length and width of the magnetic sensing portion determine the resistance value and sensitivity of the element. For example, in order to set a semiconductor thin film having a large thickness and a low resistance value as a reference resistance value, it is necessary to increase the length and reduce the width, but this lowers the sensitivity. When the boundary between the magnetic sensing part and the electrode part is curved as in the present invention, the boundary is naturally different from the case where the boundary is linear. The length in this case is the longest (the length of the center of the magnetic sensing part width)
And the shortest (length of the end in the width direction of the magnetic sensing portion) can be used to design the pattern. Precisely, it depends on the shape of the boundary between the magnetic sensing part and the electrode part, so it is necessary to determine the mask pattern by trial manufacture.
【００１８】基板上に形成された半導体薄膜を、パター
ニング工程において、所望の特性のでる長さと幅のマス
クを用い、多数の素子を一括してパターン形成を行う。
その際、電極部の形成も併せて行う。その後、ダイシン
グ工程により、個別のペレットとし、これらのペレット
をダイボンダー等でリードフレームに固着し、ペレット
の電極とリードフレームとをワイヤーボンダー等でつな
ぎ、さらにモールド工程などによりホール素子とするの
が製造の一つの態様である。A semiconductor thin film formed on a substrate is patterned in a patterning step using a mask having a desired length and width to obtain desired characteristics.
At this time, the formation of the electrode portion is also performed. After that, individual pellets are formed by a dicing process, these pellets are fixed to a lead frame by a die bonder or the like, the electrodes of the pellet are connected to the lead frame by a wire bonder or the like, and a hall element is formed by a molding process or the like. This is one embodiment of the present invention.
【００１９】このようにして作ったホール素子は、不平
衡電圧の素子間のばらつきが少ない。In the Hall element manufactured in this way, the variation of the unbalanced voltage between the elements is small.
【００２０】[0020]
【実施例】以下に、実施例によって本発明をさらに詳細
に説明する。The present invention will be described in more detail with reference to the following examples.
【００２１】（実施例１、比較例１、２）雲母を蒸着基
板にして、初めにＩｎ過剰のＩｎＳｂ複合結晶（ＩｎＳ
ｂ結晶とＩｎＳｂ膜から析出するＩｎから形成される複
合結晶）薄膜を蒸着により形成し、次いで過剰のＩｎと
化合物を形成するＳｂを過剰に蒸着する方法によって化
学量論組成の移動度４３，０００ｃｍ2 ／Ｖ／ｓｅｃの
ＩｎＳｂ薄膜を雲母基板上に作製した。(Example 1, Comparative Examples 1 and 2) First, mica was used as a deposition substrate, and an In-rich InSb composite crystal (InS
composite crystal formed from b crystal and In deposited from InSb film) A thin film is formed by vapor deposition, and then the excess stoichiometric mobility 43,000 cm is obtained by vapor deposition of excess Sb to form a compound with excess In. A 2 / V / sec InSb thin film was formed on a mica substrate.
【００２２】次に、５０ｍｍ角で厚みが０．１５ｍｍの
アルミナ製セラミック基板を準備し、上記のＩｎＳｂ薄
膜上にポリイミド樹脂を滴下し、セラミック基板をその
上に重ね、重しを置いて２００℃で１２時間放置した。
次に室温に戻し、雲母を剥ぎ取った。こうしてセラミッ
ク基板上に担持されたＩｎＳｂ薄膜に、フォトリソグラ
フィーの手法によって感磁部パターンを形成した。Next, a 50 mm square ceramic substrate made of alumina and having a thickness of 0.15 mm is prepared, a polyimide resin is dropped on the above-mentioned InSb thin film, the ceramic substrate is overlaid thereon, and a weight is placed at 200 ° C. For 12 hours.
Next, the temperature was returned to room temperature, and the mica was peeled off. Thus, a magneto-sensitive portion pattern was formed on the InSb thin film carried on the ceramic substrate by a photolithography technique.
【００２３】感磁部の幅が１４０μｍ、長さが最長部分
５４０μｍ、最短部分４９０μｍで、図１に示すように
感磁部と電極部の境界の形状が感磁部の中心から見て凸
状のパターン（実施例１用）、感磁部の幅が１４０μ
ｍ、長さが４９０μｍで、感磁部と電極部の境界の形状
が図３に示すように直線状のパターン（比較例１用）、
および感磁部の幅が１４０μｍ、長さが最長部分５４０
μｍ、最短部分４９０μｍで、ただし感磁部と電極部の
境界の形状が感磁部の中心から見て凹状のパターン（比
較例２用）の３種類のパターンをその順に繰り返して配
列させたマスクを用いて３種類のそれぞれのパターンの
感磁部を多数パターニングした。電極部はＣｕで、ボン
ディング電極部はＮｉとＡｕの積層構造とした。このよ
うにして、上述したマスクパターンに相当する感磁部パ
ターンを有する実施例１、比較例２、３のホール素子を
同一の工程で同時に作製した。このようにすることによ
って、半導体薄膜の組成、厚みの変動等の要因による不
平衡電圧のばらつきを一定化することができ、感磁部と
電極部の境界の形状の影響を正しく評価することができ
る。実施例１、および比較例１、２のホール素子をそれ
ぞれ３００個づつランダムに抜き取って、不平衡電圧を
測定してその素子間のばらつきの分布を計算した。ばら
つきの分布はいずれの場合も０ｍＶを中心とした正規分
布と仮定できる。The width of the magnetic sensing part is 140 μm, the length is the longest part 540 μm, and the shortest part is 490 μm. As shown in FIG. 1, the shape of the boundary between the magnetic sensing part and the electrode part is convex when viewed from the center of the magnetic sensing part. Pattern (for Example 1), the width of the magnetically sensitive part is 140 μm
m, the length is 490 μm, and the shape of the boundary between the magnetosensitive part and the electrode part is a linear pattern (for Comparative Example 1) as shown in FIG.
And the width of the magnetic sensing part is 140 μm and the length is the longest part 540.
μm, the shortest part is 490 μm, but the shape of the boundary between the magnetic sensing part and the electrode part is a concave pattern (for Comparative Example 2) when viewed from the center of the magnetic sensing part. A large number of magnetically sensitive parts of each of the three types of patterns were patterned by using. The electrode portion was made of Cu, and the bonding electrode portion was made of a laminated structure of Ni and Au. In this way, the Hall elements of Example 1, Comparative Examples 2, and 3 having the magneto-sensitive portion pattern corresponding to the above-described mask pattern were simultaneously manufactured in the same process. By doing so, it is possible to stabilize the variation of the unbalanced voltage due to factors such as the composition and thickness of the semiconductor thin film, and to correctly evaluate the influence of the shape of the boundary between the magnetic sensing part and the electrode part. it can. 300 Hall elements of Example 1 and Comparative Examples 1 and 2 were each randomly sampled, the unbalanced voltage was measured, and the distribution of variation between the elements was calculated. In any case, the distribution of the variation can be assumed to be a normal distribution centered on 0 mV.
【００２４】感磁部と電極部の境界の形状が感磁部中心
から見て凸状の実施例１の素子の場合、入力電圧１Ｖ印
加時の不平衡電圧のばらつきの分布の偏差σは１．１ｍ
Ｖであった。それに対して、感磁部と電極部の境界の形
状が直線状の比較例１、および境界の形状が感磁部中心
から見て凹状の比較例２の場合は、不平衡電圧のばらつ
きの分布の偏差σはそれぞれ１．９ｍＶおよび２．６ｍ
Ｖで、実施例１より大きかった。In the case of the device of Example 1 in which the shape of the boundary between the magnetic sensing part and the electrode part is convex when viewed from the center of the magnetic sensing part, the deviation σ of the distribution of the unbalanced voltage variation when an input voltage of 1 V is applied is 1 .1m
V. On the other hand, in Comparative Example 1 in which the shape of the boundary between the magnetic sensing part and the electrode part is linear, and in Comparative Example 2 in which the shape of the boundary is concave when viewed from the center of the magnetic sensing part, the distribution of the unbalanced voltage variation is Are 1.9 mV and 2.6 m, respectively.
V was larger than that of Example 1.
【００２５】（実施例２、比較例３、４）図２に示した
いわゆる対角パターンの感磁部を有するホール素子を作
製した。図２における参照符号は図１と同様であり、説
明を省略する。図２の対角パターンを有し、感磁部の寸
法および感磁部と電極部の境界の形状が実施例１、比較
例１および比較例２と同じ素子をそれぞれ実施例２、比
較例３、比較例４としてそれぞれ３００個の素子につい
て不平衡電圧を測定し、そのばらつきの分布を計算し
た。Example 2, Comparative Examples 3 and 4 A Hall element having a so-called diagonal pattern magneto-sensitive portion shown in FIG. 2 was produced. The reference numerals in FIG. 2 are the same as those in FIG. Elements having the diagonal pattern shown in FIG. 2 and having the same size of the magneto-sensitive portion and the shape of the boundary between the magneto-sensitive portion and the electrode portion as in Example 1, Comparative Example 1, and Comparative Example 2 were obtained in Example 2 and Comparative Example 3, respectively. As Comparative Example 4, the unbalanced voltage was measured for each of 300 devices, and the distribution of the variation was calculated.
【００２６】１Ｖ印加時の、実施例２、比較例３および
比較例４の不平衡電圧のばらつきの分布の偏差σは、そ
れぞれ実施例１、比較例１および比較例２とほぼ同様で
あった。The deviation σ of the distribution of the unbalanced voltage variation in Example 2, Comparative Example 3 and Comparative Example 4 when 1 V was applied was almost the same as Example 1, Comparative Example 1 and Comparative Example 2, respectively. .
【００２７】（実施例３、比較例５、６）３インチ（約
７．６ｃｍ）角で厚みが０．３ｍｍの高透磁率フェライ
ト、例えばＭｎ−Ｚｎフェライトを強磁性体基板とし、
その上にスパッタリングによってコーニング社製の７０
５９ガラスを０．５μｍの厚さに付着し、初めにＩｎ過
剰のＩｎＳｂ複合結晶薄膜を蒸着によってガラス膜上に
形成し、次いで、過剰のＳｂを蒸着してＩｎＳｂ薄膜を
形成し、その後、ＩｎＳｂ薄膜を所望の抵抗値になるま
で研磨する方法で半導体薄膜がガラス膜を介して強磁性
体上に担時された構造を作製した。この半導体薄膜に実
施例１、比較例１および比較例２と同じパターンのマス
クを用いてパターニングを行い、実施例３、比較例５お
よび比較例６の素子を同時に作製した。先の実施例と同
様に、それぞれ３００個の素子について不平衡電圧を測
定し、その素子間のばらつきを計算した。ばらつきの分
布はいずれの場合も０ｍＶを中心とした正規分布と仮定
できる。(Example 3, Comparative Examples 5 and 6) A high permeability ferrite, for example, Mn-Zn ferrite having a thickness of 0.3 mm and a thickness of 0.3 mm (about 7.6 cm) square is used as a ferromagnetic substrate.
On top of this, a Corning 70
59 glass was deposited to a thickness of 0.5 μm, an In-excess InSb composite crystal thin film was first formed on the glass film by vapor deposition, and then excess Sb was vapor-deposited to form an InSb thin film. A structure in which a semiconductor thin film was supported on a ferromagnetic material via a glass film by a method of polishing the thin film to a desired resistance value was produced. This semiconductor thin film was patterned by using the same pattern mask as in Example 1, Comparative Example 1 and Comparative Example 2, and devices of Example 3, Comparative Example 5 and Comparative Example 6 were simultaneously manufactured. As in the previous example, the unbalanced voltage was measured for each of 300 elements, and the variation between the elements was calculated. In any case, the distribution of the variation can be assumed to be a normal distribution centered on 0 mV.
【００２８】感磁部と電極部の境界の形状が感磁部中心
から見て凸状の実施例３の素子は、１Ｖ印加時の不平衡
電圧のばらつきの分布の偏差σは１．６ｍＶであった。
それに対して、境界の形状が直線状の比較例５および境
界の形状が感磁部の中心から見て凹状の比較例６の不平
衡電圧のばらつきの分布の偏差σはそれぞれ２．３ｍＶ
および２．７ｍＶで実施例３より大きかった。。In the device of Example 3 in which the shape of the boundary between the magnetic sensing portion and the electrode portion is convex when viewed from the center of the magnetic sensing portion, the deviation σ of the distribution of the unbalanced voltage variation when 1 V is applied is 1.6 mV. there were.
On the other hand, the deviation σ of the distribution of the unbalanced voltage variation in Comparative Example 5 in which the shape of the boundary is linear and Comparative Example 6 in which the shape of the boundary is concave when viewed from the center of the magnetosensitive portion is 2.3 mV, respectively.
And 2.7 mV, which was larger than that of Example 3. .
【００２９】（実施例４、比較例７、８）実施例３、比
較例５、６で説明した感磁部パターンを有する半導体薄
膜の感磁部のほぼ中心上に、特公平７−１３９８７号公
報に記載の方法で、一辺の長さが３００μｍの立方体の
高透磁率フェライトチップを、シリコーン樹脂を接着剤
として載せた。(Example 4, Comparative Examples 7 and 8) On substantially the center of the magnetic sensing portion of the semiconductor thin film having the magnetic sensing portion pattern described in Example 3, Comparative Examples 5 and 6, According to the method described in the publication, a cubic high-permeability ferrite chip having a side length of 300 μm was mounted with a silicone resin as an adhesive.
【００３０】ダイシング、ダイボンディング、ワイヤー
ボンディング、モールドなどの工程を経て、実施例４、
比較例７および比較例８の素子を同時に作製した。それ
ぞれ３００個の素子について感度を測定したところ、感
磁部と電極部の境界の形状が直線状の比較例７の素子の
感度は、入力電圧１Ｖ、磁界５００Ｇで平均２８０ｍＶ
であった。感磁部と電極部の境界の形状が感磁部中心か
ら見て凸状の実施例４の素子は約６％これより小さく、
境界の形状が感磁部中心から見て凹状の比較例８の素子
の場合は約６％比較例７より大きかった。Through the steps of dicing, die bonding, wire bonding, molding, etc.,
The devices of Comparative Examples 7 and 8 were simultaneously manufactured. When the sensitivity was measured for each of 300 devices, the sensitivity of the device of Comparative Example 7 in which the shape of the boundary between the magnetically sensitive portion and the electrode portion was linear was 280 mV on average at an input voltage of 1 V and a magnetic field of 500 G.
Met. The device of Example 4 in which the shape of the boundary between the magnetically sensitive portion and the electrode portion is convex when viewed from the center of the magnetically sensitive portion is about 6% smaller than this,
In the case of the device of Comparative Example 8 in which the shape of the boundary was concave when viewed from the center of the magnetic sensing portion, the value was about 6% larger than that of Comparative Example 7.
【００３１】また、先の実施例と同様にそれぞれ３００
個の素子について不平衡電圧を測定した。不平衡電圧の
ばらつきの分布はいずれの場合も正規分布と仮定でき
る。実施例４の場合の不平衡電圧の素子間のばらつきの
分布の偏差σは２．１ｍＶであった。それに対して、比
較例７および比較例８の不平衡電圧のばらつきの分布の
偏差σはそれぞれ２．５ｍＶおよび２．９ｍＶで実施例
４より大きかった。In the same manner as in the previous embodiment, 300
The unbalanced voltage was measured for each of the devices. The distribution of the unbalanced voltage variation can be assumed to be a normal distribution in any case. In the case of Example 4, the deviation σ of the distribution of the unbalanced voltage among the devices was 2.1 mV. On the other hand, the deviation σ of the distribution of the variation of the unbalanced voltage in Comparative Examples 7 and 8 was 2.5 mV and 2.9 mV, respectively, which was larger than that in Example 4.
【００３２】[0032]
【発明の効果】以上説明したように、本発明によれば、
高感度で、不平衡電圧が小さく、しかもその素子間のば
らつきの小さいホール素子を得ることができる。As described above, according to the present invention,
It is possible to obtain a Hall element with high sensitivity, low unbalanced voltage, and small variation among the elements.
【図１】本発明によるホール素子の一実施例の平面図で
ある。FIG. 1 is a plan view of an embodiment of a Hall element according to the present invention.
【図２】本発明によるホール素子の他の実施例の平面図
である。FIG. 2 is a plan view of another embodiment of the Hall element according to the present invention.
【図３】従来のホール素子の一例の平面図である。FIG. 3 is a plan view of an example of a conventional Hall element.
１ 基板 ２ 絶縁層 ３ 化合物半導体層の感磁部 ４ 電極部 ５ ボンディング電極部 DESCRIPTION OF SYMBOLS 1 Substrate 2 Insulating layer 3 Magnetic sensing part of compound semiconductor layer 4 Electrode part 5 Bonding electrode part
Claims (3)
グされた感磁部と電極部を有する半導体薄膜とを有する
ホール素子であって、前記感磁部と前記電極部の境界の
形状が該感磁部の中心から見て凸状になっていることを
特徴とするホール素子。1. A Hall element comprising a substrate, a patterned magnetically sensitive portion formed on the substrate, and a semiconductor thin film having an electrode portion, wherein a shape of a boundary between the magnetically sensitive portion and the electrode portion is the same. A Hall element having a convex shape as viewed from the center of the magnetic sensing portion.
系化合物半導体薄膜であることを特徴とする請求項１に
記載のホール素子。2. The Hall element according to claim 1, wherein the semiconductor thin film is an indium-antimony-based compound semiconductor thin film.
特徴とする請求項１または２に記載のホール素子。3. The Hall element according to claim 1, wherein the substrate is a ceramic substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20593896A JP3715380B2 (en) | 1996-08-05 | 1996-08-05 | Hall element |
| US09/352,872 US6141133A (en) | 1995-10-25 | 1999-07-13 | Optical scanning device and a scanning lens therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20593896A JP3715380B2 (en) | 1996-08-05 | 1996-08-05 | Hall element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1051047A true JPH1051047A (en) | 1998-02-20 |
| JP3715380B2 JP3715380B2 (en) | 2005-11-09 |
Family
ID=16515216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20593896A Expired - Lifetime JP3715380B2 (en) | 1995-10-25 | 1996-08-05 | Hall element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3715380B2 (en) |
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1996
- 1996-08-05 JP JP20593896A patent/JP3715380B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JP3715380B2 (en) | 2005-11-09 |
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