JPH1050788A - Semiconductor device manufacture system and semiconductor device manufacture method using the system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently manufacture semiconductor devices even when a number of processes are continuously performed by electrically connecting a processor and a testing unit to an information managing unit and by processing workpieces by the processor and the testing unit on the basis of information from the information managing unit. SOLUTION: When a workpiece 95 is loaded into a processor 96, the processor 96 recognizes the workpiece 95, process information 91 is transferred to the processor 96 on the basis of recognized contents, and the workpiece 95 is processed on the basis of the process information 91. Subsequently, when the workpeice 95 is carried to a testing unit 97, the processed workpiece 95 is recognized and standard information 92 based on the recognized contents is transferred to the tester 97. The workpiece 95 is tested on the basis of the standard information 92. The contents of the test are transferred as test information together with the process information 91 obtained by the processor 96 to an information managing unit 90. Consequently, even when a number of processes are continuously performed, devices can be efficiently manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device manufacturing system capable of performing efficient manufacturing and a semiconductor device manufacturing method using the same.

[0002]

2. Description of the Related Art A semiconductor device is conventionally manufactured by a process shown in FIG. 19 in a photomechanical process in its manufacturing process. A semiconductor substrate (hereinafter, referred to as a wafer) made of silicon or the like that has been subjected to a predetermined underlayer treatment in a previous step is subjected to a resist application step (11) in which a resist is applied to the surface thereof.
1) an exposure step (112) of irradiating ultraviolet rays through a reticle or a mask (hereinafter, these are referred to as masks) on which a predetermined circuit pattern is formed, and transferring the pattern to a resist; Is formed through a developing step (113). Usually, 24 wafers are regarded as one lot, and a lot number is determined for management. In the mass production process, these lots are continuously supplied, and each processed lot is subjected to the development process (11
They are temporarily stored in the order in which 3) is completed, and are on standby for work in the next process.

The inspection step includes a dimension inspection step (114) in which the pattern dimension of the resist pattern is measured, and an overlay inspection step (115) for observing the state of overlay with the underlying pattern formed in the previous step. First, as shown in FIG. 20, each lot (125) on which a resist pattern is formed
Means batch (125) batches or multiple lots (12
Every 5), it is carried to the dimension inspection (120), and the dimension inspection worker performs the dimension inspection (120). Each lot (1
25) Sampling inspection is carried out by extracting several sheets from inside,
Inspection lots are classified and temporarily stored as pass lots (125a) if the dimensional accuracy is within the standard, and as reject lots (125b) if the dimensional accuracy is out of the standard. Here, the rejected lot (125b) is regarded as a rework lot, and the resist removal step (116) and the resist removal confirmation step (11)
Proceed to 7). Then, again, a new condition check, for example, from the result of resetting the exposure time and focus offset value of the exposure apparatus in the exposure step, appropriate revision condition setting is performed, again, as described above, It is put into a resist coating step (111). In addition, the passing lot (125a) is transferred from the temporary storage location to the lot (125a).
a) It is carried to the overlay inspection (115) collectively or for each of a plurality of lots (125a), and the overlay inspection (121) is performed by the overlay inspection operator.

[0004] Sampling inspection is performed by extracting a few sheets from each lot (125a). If the overlay accuracy is within the standard, it is regarded as a passed lot (125a), and if the overlay accuracy is out of the standard, it is regarded as a failed lot (125b). Inspection lots are sorted and temporarily stored. Thus, from the viewpoint of workability, the dimension inspection worker and the overlay inspection worker are separate, and each inspection processes a plurality of lots collectively.
This is a so-called batch processing mode. Here, the rejected lot (125b) proceeds to the redo process (116) and (117) in the same manner as the rejected lot (125b) in the dimensional inspection (120). And again,
From the result of checking new conditions, for example, resetting the stage offset value of the exposure apparatus in the exposure step (112), appropriate revised conditions are set, and the resist coating step ( 111). Dimension inspection process (114), overlay inspection process (11
As a result of the inspection in 5), all the lots (1
25a) is collectively advanced to the next process as a non-defective product.

[0005]

However, in such a method of manufacturing a semiconductor device, when a large number of lots are processed, the dimensional inspection (120) and the overlay inspection (12) are performed.
1) means that the labor is separated and the inspection work is a batch process. Therefore, even if there is no problem in the dimension inspection (120), if the overlay inspection (121) is not completed, the pass / fail is determined. A pass decision cannot be made, the decision is made earlier and inefficient. In addition, since the rejection of the rejected lot (125b) cannot be performed immediately and re-input is performed while checking the revised conditions, the re-execution process frequently occurs, the construction period becomes longer, and quality problems arise. Both inspections (1)
When trying to carry out 20) and (121) continuously, the inspection operator has no choice but to carry around and work, which is complicated.
There is also a cost problem. Furthermore, due to the recent increase in the degree of integration and miniaturization of devices, the difficulty of inspection contents has increased, and the inspection time has tended to increase. As a result, if the construction period is prolonged, the product yield and characteristics may be affected. There is a need for an effective treatment method.

SUMMARY OF THE INVENTION Therefore, a main object of the present invention is to provide a semiconductor device manufacturing system and a semiconductor device manufacturing method using the semiconductor device, which can perform efficient manufacturing even when a large number of processes are continuously performed. is there.

[0007]

A system for manufacturing a semiconductor device according to the present invention includes an information management unit having standard information, measurement information, processing information, and reproduction history information, and capable of transmitting and receiving information. A processing device that is electrically connected to the information processing unit and processes the object to be processed based on the processing information from the information management unit; and a processing information and a standard that is electrically connected to the information management unit and received from the information management unit. An inspection device that inspects the object to be processed based on the information and transmits measurement information and processing information or reproduction information to the information management unit according to the result.

The processing information is for extracting an optimum condition from the processing conditions tabulated based on information from the inspection device, and transmitting the optimum condition information to the processing device.

The information management section is electrically connected to the inspection apparatus, receives information on rejection of the inspection result in the inspection apparatus, and, based on processing information from the information management section,
Alternatively, a reproduction processing device for reproducing the object to be processed based on an external setting is provided.

A method of manufacturing a semiconductor device using the semiconductor device manufacturing system according to the present invention includes an information management step having standard information, measurement information, processing information, and reproduction history information, and capable of transmitting and receiving information. A process in which an object to be processed is processed by a processing device in which conditions are set based on processing information from the information management process, and an inspection device in which conditions are set in accordance with processing information and standard information from the information management process. An inspection step of inspecting the object to be processed and determining an inspection result based on the standard information.

[0011] Further, the method includes a step of receiving the rejection information of the inspection step, and regenerating the object to be processed by the reproduction processing apparatus whose condition is set based on the processing information from the information management step or based on external setting.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. FIG. 1 is a diagram showing a functional configuration of a manufacturing system in a photoengraving process in a manufacturing process of a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a diagram illustrating an example of an apparatus used for manufacturing the semiconductor device shown in FIG. FIG. 3 is a diagram illustrating a configuration of a processing apparatus / inspection apparatus in which some parts are omitted. In this manufacturing system, a file (1) serving as an information management unit, a processing device (10), and an inspection device (20) are electrically connected between the processing device (10) and the inspection device (20), It has a function of giving and receiving.

When a lot to be processed is put into the slot (14), the lot number is read, transmitted to the file (1), collated with the information in the file (1), and the processing conditions are searched. The processing conditions of the processing device (10) are extracted. The extracted condition information is transmitted to each processing device (10) via the information line (6), and each received processing device (1
In (0), condition setting is performed. Here, the main contents of the transmission information are: (a) lot to be processed: lot number (b) resist coating device: type of resist (positive type / negative type, viscosity), amount of resist drop (drop time), wafer (C) Exposure device: mask used, exposure amount (exposure time), focus offset value, stage offset value (d) Developing device: type of developer, injection amount (injection time),
The rotation number and rotation time of the wafer, the injection time of the rinsing liquid, the rotation number and the rotation time of the wafer during rinsing, and the like are included.

FIG. 3 is a view showing a photoengraving process of the semiconductor device manufactured according to the first embodiment of the present invention. The wafer (9) to be processed is processed by the process shown in FIG. First, when the wafer (9) is transferred and set by the transfer means (16) to the resist coating device (11), a specified resist (41), for example, a positive resist is dropped on the wafer (9) by a specified amount. (FIG. 3A). After this,
The wafer (9) is rotated at the designated number of revolutions for the designated time, and a resist film (42) having a predetermined thickness is formed on the wafer (9) (FIG. 3B). Next, the wafer (9) is placed on the designated mask (1).
The transporting means (1) is transferred to the exposure apparatus (12) in which
It is transported in 6). When the wafer (9) is set on the stage, the mask (17) is aligned in the X (horizontal) direction, the Y (vertical) direction, and the θ (rotation) direction based on the stage offset setting of the wafer (9). , And a focus offset setting in the Z (vertical) direction. Note that there is a method of completing the alignment when the wafer (9) is moved to a predetermined position by a preset offset value, and the alignment is not limited to these methods. Here, the focus offset value and the stage offset value are factors that greatly affect the dimensional accuracy and the overlay accuracy. When the alignment is completed, exposure for a designated exposure time (exposure amount) is started from a start position on the wafer (9). In this exposure, ultraviolet light (18) is irradiated through a mask (17), and a pattern on the mask (17) is reduced and projected to about 1/5, and a wafer (9) is formed by a step-and-repeat method. Pattern transfer is performed sequentially over the upper predetermined area (see FIG. 3).
(C)). Next, the wafer (9) is transferred to the developing device (13) by the transfer means (16), and the exposed wafer (9) is transferred.
The specified developer (43) is injected for a specified time, the wafer (9) is rotated at a specified number of rotations for a specified time (or may be an intermittent rotation / stop process), and a rinsing liquid is further injected. The cleaning process of the developer (43) is performed according to the specified number of rotations and the specified time (FIG. 3D). Thus, a resist pattern (40) is formed on the wafer (9) (FIG. 3E). The above processing is repeated, and wafers (9) in the lot are sequentially processed, and the discharge port (1) is processed.
The sheet is transported by the transport means (16) to 5). When the processing of the lot is completed, the next lot is put into the processing device (10).

Next, the processed lot is inspected by the inspection device (2
0) by the conveying means (25), and the dimensional inspection and the overlay inspection are continuously performed. When the lot to be inspected is set in the input port (24) of the inspection apparatus (20), the lot number is recognized from the file (1), and the standard information (2) for the dimension inspection and overlay inspection corresponding to the process of the lot is recognized. ) Is transmitted to the storage unit (not shown) of each inspection device (20) via the information line (7). As this device (20), a device using a measuring SEM (Scanning Electron Microscope) or a system using an electron beam is used. First,
In the dimensional inspection, five designated sheets are extracted from 24 sheets of the lot, and as shown in FIG. 4A, designated resist patterns (42) of designated five chips (41) of each wafer (9). Is measured. The first wafer (9) is transferred to the measuring stage of the dimension inspection device (21) by the transfer means (2).
When transported and set by 6), one chip (41
a) The measured pattern (42) of the eye is detected. The pattern width L is measured, and sequentially the next measurement chip (41b)
To (41e) are measured. The measured value is stored in the dimensional inspection device (2) together with the position information of the measuring chip (41).
Stored in the storage unit of 1). When the measurement of the first wafer (9) is completed, the wafer (9) is returned to the original position. Similarly, the next wafer (9) is sequentially taken out and measured. When the measurement of the five wafers (9) is completed, the measurement data of each wafer (9) stored in the storage unit is transmitted to the comparison / arithmetic circuit (50) via the information line (8) together with the lot number. Here, it is compared and collated with the standard value, and pass / fail is determined. If all of the measurement data are within the standard, the lot passes, and if any of the measurement data is out of the standard, the lot fails. Incidentally, the minimum line width of the pattern width L is about 0.2 μm to 0.4 μm in the 64 MDRAM and the 256 MDRAM, and the standard value is set to an allowable value of about 1/10 accuracy with respect to these line widths. .

In the comparison / arithmetic circuit (50), the measurement data is compared and collated in accordance with the processing flow shown in FIG. That is, the measured values of the five chips (41) in the wafer (9), the measured values of the five wafers (9) in the lot, and the average of their dimensions are compared. Further, as shown in FIG. 6, the transition of the average value of the data of the past five lots and the deviation amount with respect to the data of the previous month and one month are compared and collated as shown in the chart of FIG. Here, in FIG. 6, the lot number LB00
Sample No. 8 is regarded as a rejected lot because the average value shows a downward trend from the previous four lots and a part of the measurement data is below the lower limit of the specification. This rejected lot is advanced to the re-starting process continuously without stagnation according to the determination.
If the measurement data indicates rejection or a tendency toward rejection, an alarm or information to be corrected is displayed on the CRT (5) or automatically transmitted to the file (1). And let them know about the anomaly. Note that, in order to maintain quality, the above-mentioned standard value may be determined from the absolute value of the dimension, or may be determined from the transition of the previous month's data.

A lot that has passed the dimensional inspection is continuously subjected to an overlay inspection. As shown in FIG. 4C, five wafers (9) are extracted in the same manner as in the dimension inspection, and the specified pattern (4) on five chips (41) of each wafer (9) is extracted.
The overlay inspection according to 4) is performed. In this inspection, the amount of deviation in the X direction, the Y direction, and the θ direction with respect to the pattern (43) formed in the previous process is measured by an apparatus using an optical system. Here, only the X direction and the Y direction are illustrated. The first wafer (9) is transport means (26)
Is set on the stage of the overlay inspection device (22), after the focusing process, the designated chips (41a) to (41e) in the wafer (9) are sequentially measured, and the measurement data is It is stored in a storage unit (not shown) of the overlay inspection device (22). When the measurement of the first wafer (9) is completed, it is returned to the original position, and the next wafer (9) is sequentially taken out and measured. When the measurement of the five wafers (9) is completed, the measurement data stored in the storage unit is transmitted to the comparison / arithmetic circuit (50) via the information line (8) together with the lot number. Here, as in the above-described dimension inspection, the measured data is compared and collated with the standard, and pass / fail is determined. In this case, as the standard value, an allowable value is set up to a deviation amount of about 0.1 μm with respect to the minimum dimension. This can also change the standard value depending on the case. The rejected lot (31) proceeds to the redo step continuously without stagnation, and displays an alarm or correction information on the CRT (5) or file (1) in the same manner as in the above dimension inspection. To be sent and fed back.
The passing lot (30) has the lot number, the processing conditions in the processing device (10), the dimension measurement data, and the overlay measurement data. For example, as shown in FIG.
The information is transmitted to the file (1) via the information line (8), is recorded as the pass information (2) in the file (1), and proceeds to the next process as a pass lot (30). Thus, according to this system, it is processed continuously,
Efficient processing corresponding to high integration and miniaturization can be performed.

On the other hand, a lot (3
1) is proceeded to the redo step continuously without stagnation, and the measurement data of the lot (31) is
The processing conditions in the processing device (10) are given, transmitted as reject information to the file (1) via the information line (8), and recorded as reject history information (4). In the redo process, after the defective resist pattern is removed, an inspection of the removed state is performed. This redo process is normally performed automatically under the set conditions based on the process conditions from the file (1). Apart from this, a worker intervenes to set the process conditions to the apparatus, or It is also possible to adopt a processing mode for confirming the removal state. FIG. 9 is a diagram showing a partially omitted device configuration of the redo process according to the first embodiment of the present invention. When the rework lot (31) is put into the slot (66), the lot number is read and the processing unit (6) is read from the file (1) via the information line (65).
The processing condition is transmitted to 0), and the condition setting is performed in the processing device (60). The wafer (68a) is transferred by the transfer means (6
When transported by 3) and set in the resist removing device (61), processing is started under specified conditions. The resist is removed by plasma ashing or liquid processing. In this case, the plasma ashing is performed. After the processing for the designated time, the processed wafer (68b) is subjected to the foreign substance inspection device (62) for inspection of the resist removal state.
And a surface inspection for the presence or absence of foreign matter remains.
The apparatus (62) employs a method using a laser beam, a principle utilizing a combination of a spatial filter and a chip comparison, and the like, whereby a 100% inspection of the wafer (68b) or a sampling inspection of a predetermined wafer (68b) is performed. Is performed. After the inspection, the wafer (68c) is transferred to the drain port (67) by the transfer means (63). As a result of this inspection, a wafer having the number of foreign substances on the wafer (68c), the surface condition, and the like satisfying the standard is re-taken to be a passed lot. Redo processing device (6
The processing information and measurement information in 0) are recorded in the reproduction history information (4) of the file (1) via the information line (65) together with the processing conditions, and are accumulated. In this way, even in the redo processing, continuous processing is possible,
In a short construction period, an effective process in which the frequency of redo is suppressed is performed.

When the re-passed lot is re-input, the new processing condition is set in the processing unit (10) from the file (1).
Via the information line (6). In this case, the cause analysis of the measurement data in the inspection apparatus (20) which failed in the initial processing is performed, and the revised condition is different from the previous one. For example, as in the case of the lot number LB008 shown in FIG.
For a part of the measured data that has become smaller than the lower limit of the specification, the condition for increasing the required size is extracted from the condition table in the file (1), for example, the condition table shown in FIG. You. Here, the dimension width L
Is required to be increased by 0.05 μm, the mask drawing data in the standard information (2), the finished mask dimension data, and the actual measurement data are compared, and whether the data is caused by the mask or the processing device (10) Are collated and determined. If the shape of the resist pattern (40) is normal due to the processing apparatus (10), as shown in FIG. 11, the exposure time in the exposure apparatus (12) is set to 30 msec. The shortened condition is extracted as the optimum condition and given as the revised condition. Or,
If the side inclination angle of the resist pattern (40) does not satisfy the set angle based on the information from the measurement signal waveform at the time of the dimension inspection, the exposure apparatus (1) increases the inclination angle.
The condition in which the focus offset value is increased in 2) is extracted as the optimum condition, and given as the revised condition.

The lot to be reprocessed is processed by the processing apparatus (1).
0), the lot number is read and the processing device (10) set in the new condition (revision condition) transmitted from the file (1) via the information line (6). When the wafer (9) is conveyed, resist coating, exposure, and development are performed in the same manner as described above, and a resist pattern (40) is formed. After this,
In the same manner as described above, the dimensional inspection and the overlay inspection are performed, and pass / fail judgment is made. If you pass,
The lot is advanced to the next process.
Along with the lot number, in addition to the new processing condition, the new measurement data, the old processing condition, and the old measurement data, a condition change event (what has been changed and what has been changed) is attached to the file (1) via the line (8). Transmitted and recorded as pass information (3). These data are divided into monthly correspondences, accumulated and updated together with the recorded data, and the latest trend charts are created as shown in FIGS. 6, 7, 10 and 11, and the rejection of defective products is prevented. Will be used.
As described above, according to this system, the processing conditions, inspection data, and the like are accumulated, so that the learning effect obtained by accumulating the processing conditions and the redo conditions can be used, and the optimal condition setting can be easily performed. High-precision and efficient processing is performed.

Embodiment 2 FIG. In the above description, the inlet (14) and the outlet (1)
5), the resist coating device (11), the exposure device (12), and the developing device (13) are integrated, but the independent arrangement type in which these are automatically conveyed and connected. There may be. The inspection device (20) also has a configuration in which the dimension inspection device (21) and the overlay inspection device (22) are arranged side by side. It is a form connected via the transport unit (26), and if it is electrically connected to the file (1), the form can be appropriately selected, and efficient production can be performed. .

Embodiment 3 FIG. In the inspection process, the dimension inspection and the overlay inspection are performed continuously.
These operations may be performed continuously in the reverse order. It is also possible to set a so-called parallel processing mode in which another wafer (9) is superimposed and inspected during the dimension inspection. Not done. This can also shorten the inspection period. In the above-described inspection, in both the dimension inspection and the overlay inspection, a description is given of a case where 24 wafers / lot are taken out, 5 wafers are taken out, and the same wafer (9) and the same chip (41) are measured for 5 chips / wafer. However, depending on the required accuracy, process, etc., the number of samples, the number of wafers, the number of measurement chips,
Is the choice.

Embodiment 4 Also, a dimension inspection device (2
1) The overlay inspection device (22) has a storage unit to store the measurement data. The storage unit is configured to store the comparison / arithmetic circuit (50) or the file (1).
It may be one built in. The comparison / arithmetic circuit (50) includes a file (1) and a dimension inspection device (2).
1) Although it is provided independently of the overlay inspection device (22), it is made to correspond to the function of the file (1) built-in or the dimension inspection device (21) and the overlay inspection device (22). It may be a built-in type. This also allows efficient production.

Embodiment 5 Also, the embodiment in which the redo processing device (60) is arranged independently of the processing device (10) and the inspection device (20) is shown, but the redo processing device (60) is connected to the inspection device (20) and is automatically conveyed. Things,
Alternatively, various combinations are possible, such as a form in which the processing device (10), the inspection device (20), and the redo processing device (60) are integrated to perform continuous processing. By being integrated, a series of processes can be continuously performed, and more efficient production can be performed.

The point is that information can be stored and recorded, or it has a comparison / arithmetic function, can exchange processing conditions with a file (1) for selecting and instructing information, and can convey information without delay. This is a system in which the processing is performed, and the processing wafer (9) can be inspected continuously or in parallel, and the result is immediately judged. Based on the judgment, the lot to be processed is transferred to the next step or the re-starting step. It is only necessary that the system be configured so that the actual processing / inspection information is reflected as the revised conditions of the next processed lot or the lot that has been redone, and the form of each processing unit is appropriately selected. It is.

Embodiment 6 FIG. FIG. 12 is a cross-sectional view of a semiconductor device manufactured according to the sixth embodiment of the present invention, and FIG. 13 is a cross-sectional view of a pre-process of the semiconductor device shown in FIG. The semiconductor device shown in FIG. 13 has an isolation insulating film (104), a gate electrode (101), a source (102), and a drain (10) on a wafer (100) made of silicon or the like.
After 3) is formed, BPSG (B
oron PhosphoSilicate Glas
s) Obtained by forming the film (105). This BPSG
In the formation of the film (105), the system shown in FIG. 14 is applied. The BPSG film (105) is formed by a film forming apparatus (7
1) For example, for example, CVD (Chemical Vapor)
At this time, designated processing conditions (gas type, gas pressure, processing time, etc.) are transmitted from the file (1), and the film is processed based thereon. The processed wafer is subjected to a film thickness inspection device (72), for example, an optical or electrical device, an impurity measurement device (73), for example, a laser for inspecting the electrical and physical characteristics of the BPSG film (105). Inspection is performed in parallel or continuously by a scanning or electrical system, a foreign matter / defect measuring device (74), for example, a laser scanning or electron beam scanning system, and the same processing and determination as described above are performed. Thereby, efficient and high-quality B
The PSG film (105) can be formed. Depending on this system, it can be applied not only to the production of the BPSG film (105) but also to the production of other insulating films.

Embodiment 7 FIG. 15 shows a semiconductor device according to the seventh embodiment, and is a cross-sectional view of a pre-process of the semiconductor device shown in FIG. The one shown in FIG.
00) and the gate electrode (10).
1) After the BPSG film (105) coated on the source (102) and the drain (103) is patterned,
An Al film (106) electrically connected to the source (102) and the drain (103) is formed thereon. The system shown in FIG. 16 is also applied to the formation of the Al film (106). The Al film (106) is formed by a film forming device (81), for example, a sputtering device or a CVD device. At this time, processing conditions (output, degree of vacuum, sputtering material, etc.) specified by a file (1) are used. Is transmitted and processed based on it. The processed wafer has a film thickness measuring device (82) for inspecting electrical and physical characteristics of the Al film (106).
For example, an electrical or optical device, a sheet resistance measuring device (83), for example, an electrical device, a foreign matter / defect measuring device, for example, a laser scanning or electron beam scanning device, parallel or continuous. Inspection is performed, and the same processing and determination as described above are performed. Thereby, an efficient and high quality Al film (1
06) can be performed. Note that this system uses Al
Not only the film (106) but also other metal films such as a W film and a Mo film, alloy films of these metal films, and alloy films of these metal films and Si can be applied.

Embodiment 8 The above-described embodiment is generally shown as follows. FIG. 17 is a diagram showing a configuration of a semiconductor device manufacturing system according to an eighth embodiment of the present invention, and shows the system of the above embodiment with a focus on information flow. Information Management Department (9
0) includes processing information (91), standard information (92), measurement information (93), and reproduction history information (94), and these pieces of information (91) to (94) exchange information mutually. ,
It is configured to be able to be updated. Further, the information management unit (90) is electrically connected to the processing device (96) and the inspection device (97) so that information can be exchanged. When an object to be processed (95), for example, a wafer on which a semiconductor device is to be formed is loaded, it is processed by a processing device (96), and the processing state is inspected by an inspection device (97). First, when the object to be processed (95) is put into the processing device (96), the processing device (96) recognizes the object to be processed (95), and the processing information (91) is converted into the processing device (91) based on the recognition content. (9
Transmitted to 6). Here, the processing information (91) includes the details of the recognition of the object to be processed (95) and the processing conditions of the processing device (96). The object to be processed (95) is processed based on the processing information (91). When the processing in the processing device (96) is completed, the object to be processed (95)
Is transported to the inspection device (97), where the object to be processed (95) is recognized, and the standard information (9)
2) is transmitted to the inspection device (97). Here, the standard information (92) includes necessary information regarding inspection such as measurement conditions of the object (95) and standard conditions for pass / fail determination.
The object to be processed (95) is inspected based on the standard information (92). The recognition of the object to be processed (95) is performed between the information management unit (90) and the inspection device (97). However, information from the processing device (96) in the previous process may be used. It is possible and can be applied by the configuration.

The inspection content includes standard information (92) as inspection information together with processing information (91) in the processing device (96).
And the information measured by the inspection device (97) is stored in the information management unit (9).
0). The transmitted information is associated with management information such as the lot number of the object to be processed (95), and standard information (92) and information such as measurement results are recorded and stored in the measurement information (93) section. A processing device (9
The processing information, standard information and measurement information in 6) are recorded and accumulated in the reproduction history information (94) as history information. Here, the measurement information includes pass / fail information of the object to be processed (95). The reproduction history information (94) records and accumulates information of the object (95) in the processing device (96) and information in the inspection device (97). 9
The optimum condition for 6) can be easily extracted, and when the information in the inspection device (97) is rejected or tends to be rejected, prompt processing information (91) is obtained.
To the next object to be processed (9
It is possible to respond to the change of the processing information (91) to 5). Therefore, generation of rejected products is suppressed, and highly accurate processing of the object to be processed (95) can be realized.

Embodiment 9 FIG. 18 is a diagram showing a configuration of a semiconductor device manufacturing system according to a ninth embodiment of the present invention. This is different from the eighth embodiment in that a reproduction processing device (98) is added, and is electrically connected to an information management unit (90) to exchange information.
The processing up to the inspection device (97) is the same as that of the eighth embodiment, and the description of the processing and the flow of information is omitted. Object to be processed (95)
In the inspection device (96), if it passes, it proceeds to the next step, and if it does not pass, it is reproduced in the reproduction processing device (98). In the case of the reproduction process, when the reproduction processing device (98) recognizes the object to be processed (95), the reproduction processing information (94)
Processing conditions for the reproduction process are transmitted to the reproduction processing device (98). The reproduction processing device (98) processes the object (95) according to the processing conditions. After the processing, information such as processing conditions, actual processing information, inspection results, etc.
Is transmitted to the reproduction history information (94) in association with the management information, and is recorded and accumulated. This recorded and accumulated information is
An internal table is formed, and the next object to be processed (95)
When the reproduction process is performed, it is also used for extracting the optimum conditions for the reproduction process. In the processing by the reproduction processing device (98), as a result of the inspection, the regenerated processed object that has passed is newly input to the processing device (96). in this way,
The object (95) to be regenerated is inspected by the inspection device (9).
Since the optimum reproduction processing conditions can be extracted continuously from the processing in 7), efficient and high-precision processing can be performed.

Embodiment 10 FIG. In each of the above embodiments, the case where the object to be processed (95) is a semiconductor device and is manufactured by the manufacturing system has been described. However, the present invention is not limited to this. Objects other than semiconductors may be used, and the present invention can be applied to a manufacturing system used for manufacturing the same. In this case, the same effect as described above can be obtained.

[0032]

As described above, according to the present invention, the processing device and the inspection device are electrically connected to the information management unit to exchange information, so that a large number of continuous processes can be performed. The object to be processed is processed by the processing device and inspection device based on the information from the information management unit, so that the processing result can be determined quickly, and it can respond to high integration and miniaturization, with a short construction period and high accuracy. Semiconductor device can be manufactured.

Further, various information such as processing information and measurement information can be recorded and stored in the information management unit, and not only can learning effects be utilized, but also tabled processing conditions are provided. Since the information is easily transmitted and the information is transmitted to the processing device as processing information, the amount of reproduction is suppressed, and an efficient and highly accurate semiconductor device can be manufactured.

Further, since the information processing section and the reproduction processing device electrically connected to the inspection device are provided, the reproduction processing can be continuously performed based on the information of the inspection result, and can be performed efficiently and with high accuracy. A semiconductor device that has been subjected to a regeneration process can be manufactured.

[0035] Further, since there is provided a processing step of processing the object to be processed and an inspection step of inspecting the object based on the information from the information management step having the respective information, the object to be processed is processed following the processing step. In addition, parallel or continuous inspection can be performed, and a semiconductor device can be manufactured efficiently with a short construction period and with a high degree of integration and miniaturization.

In addition, since the apparatus has a step of performing a reproduction process by a reproduction processing device set based on information from the information management step and the inspection step, the reproduction processing can be continuously performed based on the result of the inspection step. In addition, a semiconductor device can be manufactured efficiently and with high accuracy.

[Brief description of the drawings]

FIG. 1 is a diagram showing a functional configuration of a manufacturing system in a photomechanical process in a manufacturing process of a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a diagram illustrating a configuration of a partially omitted processing apparatus / inspection apparatus illustrating an apparatus used for manufacturing the semiconductor device illustrated in FIG. 1;

FIG. 3 is a diagram illustrating a photoengraving process of the semiconductor device manufactured according to the first embodiment of the present invention;

FIG. 4 is a diagram illustrating a pattern measured by the inspection device shown in FIG.

FIG. 5 is a diagram showing a processing flow for determining measurement data by the inspection device shown in FIG. 2;

FIG. 6 is a diagram showing an example in which measurement data obtained by the inspection device shown in FIG. 2 is charted.

FIG. 7 is a diagram showing an example in which measurement data obtained by the inspection apparatus shown in FIG. 2 is charted.

FIG. 8 is a diagram illustrating transmission information by the processing device / inspection device illustrated in FIG. 2;

FIG. 9 is a diagram illustrating a partially omitted device configuration illustrating a redo processing device according to the first embodiment of the present invention;

FIG. 10 is a diagram illustrating processing information tabulated in FIG. 1;

FIG. 11 is a diagram for explaining the processing information charted as shown in FIG. 1;

FIG. 12 is a diagram showing a cross section of a semiconductor device manufactured according to the sixth and seventh embodiments of the present invention.

FIG. 13 is a diagram showing a cross section in a film forming step of a semiconductor device manufactured according to a sixth embodiment of the present invention;

FIG. 14 is a diagram showing a functional configuration of a semiconductor device manufacturing system according to a sixth embodiment of the present invention;

FIG. 15 is a diagram showing a cross section in a film forming step of the semiconductor device manufactured according to the seventh embodiment of the present invention;

FIG. 16 is a diagram illustrating a functional configuration of a semiconductor device manufacturing system according to a seventh embodiment of the present invention;

FIG. 17 is a diagram mainly showing information transmission of a semiconductor device manufacturing system according to an eighth embodiment of the present invention;

FIG. 18 is a diagram showing a configuration of a semiconductor device manufacturing system according to a ninth embodiment of the present invention, focusing on information transmission.

FIG. 19 is a diagram showing a manufacturing system in a photolithography process in a conventional semiconductor device manufacturing process.

20 is a diagram illustrating a processing flow of an inspection process illustrated in FIG. 17;

[Explanation of symbols]

1 file 2 standard information 3 pass information 4 reject / reproduction history information 5 CRT 6, 7, 8 information line 9 wafer 10 processing device 11 resist coating device 12 exposure device 13 developing device 13 inspection device 21 dimension inspection device 22 overlay inspection Apparatus 60 Redo processing device 61 Resist removal device 62 Foreign material inspection device 65 Information line 90 Information management unit 91 Processing information 92 Standard information 93 Measurement information 94 Playback history information 95 Object to be processed 96 Processing device 97 Inspection device 98 Reproduction processing device

Claims (5)

[Claims] An information management unit having standard information, measurement information, processing information, and reproduction history information, and capable of transmitting and receiving information;
A processing device that is electrically connected to the information management unit and processes the object to be processed based on the processing information from the information management unit; and a processing device that is electrically connected to the information management unit and performs processing from the information management unit. An inspection apparatus for inspecting the object to be processed based on the information and the standard information, and transmitting measurement information, processing information or reproduction information to the information management unit in accordance with a result of the inspection. . 2. The processing information according to claim 1, wherein an optimum condition is extracted from the processing conditions tabulated based on information from the inspection device, and the optimum condition information is transmitted to the processing device. Semiconductor device manufacturing system. 3. An information management unit, which is electrically connected to the inspection device, receives information on rejection of the inspection result in the inspection device, and receives the information based on processing information from the information management unit or based on an external setting. 3. The semiconductor device manufacturing system according to claim 1, further comprising a reproduction processing device for reproducing the processed body. 4. An information management process having standard information, measurement information, processing information, and reproduction history information, and capable of transmitting and receiving information, and a processing device having conditions set based on the processing information from the information management process. Based on the process in which the object is processed and the process information and the standard information from the information management process,
A method of manufacturing a semiconductor device using a semiconductor device manufacturing system, comprising: an inspection process in which an object to be processed is inspected by an inspection apparatus in which conditions are set, and an inspection result is determined based on standard information. 5. A process comprising: receiving a rejection information of an inspection process; regenerating an object to be processed by a reproduction processing device set on condition based on process information from an information management process or external setting. Item 5. A method for manufacturing a semiconductor device using the system for manufacturing a semiconductor device according to Item 4.