JPH1050670A - Method for removing org. compd. - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent foreign matters from becoming involved at lowering of a stage by feeding a gas from outside a treating chamber by a vol. increased on the stage owing lowering of the stage. SOLUTION: A substrate 3 is carried on a stage 4, vacuumchucked and heated. The stage is lifted near to a partition plate 5 to hold a specified gap between the substrate surface and partition plate surface. A nozzle 6 is provided on the partition plate for feeding an ozone gas during ashing, and the gas is exhausted from an exhaust hole 7. After the ashing is ended, the stage is lowered with feeding N gas from the nozzle 6 to prevent the gas from being involved in the treating chamber, thereby preventing foreign matters from depositing onto the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for removing organic substances on a substrate.

[0002]

2. Description of the Related Art A single-wafer type organic substance removing apparatus has a processing chamber structure as shown in a known example (Hitachi Review, Vol. 71, No. 5, P43 May 1989), and a resist (organic substance) is used.
The substrate coated with is placed on a stage and supplied with ozone gas while being heated by a heater to oxidize and decompose and volatilize organic substances. This is called ashing and is a process that is repeatedly performed in the semiconductor manufacturing process.

In order to enhance the resist removal ability during ashing by this apparatus, a stage is brought close to a partition plate made of a quartz plate, and a gap is usually set to 1 mm or less. After ashing is completed, the stage is lowered, and the substrate is carried out by the robot.

[0004]

Here, in the conventional apparatus, when the stage is lowered, the narrow gap space between the stage and the partition plate becomes negative pressure, and foreign matter in the stage lower mechanism portion and the exhaust duct portion is caught on the substrate. There was a fear of doing.

An object of the present invention is to prevent foreign matter from being caught when the stage is lowered.

[0006]

In the method of the present invention, entrainment of the contaminants is prevented by supplying a gas corresponding to the increase in volume generated on the stage when the stage is lowered from outside the processing chamber.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIG.

The processing chamber 1 has a substrate entrance 2 from which a substrate 3 is loaded onto a stage 4 and vacuum-adsorbed.
Heated. The stage rises and approaches the partition plate 5, so that the gap between the substrate surface and the partition plate surface is kept at 0.3 mm. The partition plate has a nozzle 6 for supplying ozone gas during ashing. Then, the waste gas is discharged from the exhaust port 7. After the ashing, the nitrogen gas is supplied from the nozzle when the stage descends. The flow rate of the nitrogen gas is equal to or more than the product of the stage area and the stage descent speed.

[0009]

According to the present invention, by introducing nitrogen gas at a flow rate equal to or more than the product of the stage area and the stage descent speed when the stage is lowered, entrainment of gas in the processing chamber can be prevented, and consequently foreign substances on the substrate can be prevented. Can be prevented from adhering to the surface.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a processing chamber structure according to an embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Processing room, 2 ... Doorway, 3 ... Substrate, 4 ... Stage, 5
... Partition plate, 6 ... Nozzle, 7 ... Exhaust port, 8 ... Switching valve.

Claims (2)

[Claims] An organic substance on a substrate is removed by flowing a gas of approximately 1 atm in a single-wafer system, a gap between the substrate and an upper partition plate during processing is 1 mm or less, and the substrate is placed at the end of processing. An organic substance removing apparatus for lowering a stage, wherein a gas is supplied from outside the processing chamber to a gap between the substrate and the partition plate when the stage is lowered. 2. The organic substance removing method according to claim 1, wherein the gas supply amount is equal to or more than the product of a stage area and a stage descent speed.