JPH1048819A - Positive type photoresist composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a photoresist compsn. excellent in a sensitivity, a resolution, an exposure latitude and the depth of a focus by incorporating an alkali-soluble resin, a quinonediazido group-contg. compd. and a specified polyhydroxy compd. SOLUTION: This photoresist compsn. contains an alkali-soluble resin (A), a quinonediazido group-contg. compd. (B) and at least one (C) of polyhydroxy compds. represented by formula I-III. The component (A) is, e.g. phenolic resin, a hydroxystyrene polymer or its deriv. known as the film forming resin of a photoresist compsn. A completely or partially esterified product of a hydroxy compd. with quinonediazidosulfonic acid is used as the component (B). The amts. of the components (B), (C) are 1-50 pts.wt. preferably 5-35 pts.wt. and 5-100 pts.wt., preferably 10-50 pts.wt., respectively, based on 100 pts.wt. of the component (A).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive photoresist composition, and more particularly to a positive photoresist composition useful for producing electronic parts such as semiconductor devices and liquid crystal display devices.

[0002]

2. Description of the Related Art Hitherto, a method of forming a pattern on a substrate by photolithography has been adopted for manufacturing electronic components such as semiconductor devices such as ICs and LSIs and liquid crystal devices such as LCDs. In the photolithography, a photoresist is applied on a substrate such as a silicon wafer or glass using a spinner or the like, dried, and then irradiated or drawn with an actinic ray or a particle beam through a mask to form a latent image. This is a method of forming a pattern on a substrate by developing. As a photoresist used in this photolithography, various resist compositions having excellent resolution, heat resistance, and the like have been developed and proposed, and among them, a positive resist containing an alkali-soluble novolak resin and a quinonediazide group-containing compound has been proposed. Photoresist compositions are preferred. The novolak resin dissolves in an aqueous alkali solution without swelling, has excellent developability, and exhibits excellent heat resistance to plasma etching. In addition, the quinonediazide group-containing compound itself has an action of suppressing the alkali solubility of the novolak resin.
Radiation), irradiation of electromagnetic waves such as deep ultraviolet rays including excimer laser, or particle beams such as electron beams, and drawing.
It has the property of changing to alkali solubility and also promoting the alkali solubility of the novolak resin. However, it is desired that the positive photoresist composition used in the production of ICs in recent years be excellent in heat resistance, resolution, profile shape, etc., and much research and development has been carried out, for example, US Pat. No. 4,377,631. Specification, JP-A-62-35349, JP-A-1-142548, JP-A-1-179147, Japanese Patent Publication No. 3-489
No. 7 has proposed a positive photoresist composition.

[0003]

However, the positive photoresist composition described in the above-mentioned publication has sufficient properties in response to the demands for miniaturization of semiconductors which are increasing year by year, such as heat resistance, resolution, profile shape and the like. However, as a positive photoresist composition which responds to the demand, for example, Japanese Patent Application Laid-Open No. 2-275555 discloses bis (2,5-dimethyl-4-hydroxyphenyl)-
Positive photoresist compositions to which polyphenols such as 2-hydroxyphenylmethane and bis (3,5-dimethyl-4-hydroxyphenyl) -2-hydroxyphenylmethane are added have been proposed, but they meet today's demands. Still has enough sensitivity, resolution, depth of focus characteristics,
There is a strong demand for the development of a positive photoresist composition which does not have an exposure margin or the like and has these characteristics improved in a well-balanced manner.

In view of this situation, the present inventors have conducted intensive studies and found that a specific polyhydroxy compound is blended with a positive resist composition containing an alkali-soluble resin fat and a compound containing a quinonediazide group to obtain high sensitivity. The inventors have found that a positive photoresist composition having high resolution, excellent exposure latitude, excellent focal depth characteristics, and excellent storage stability of a resist solution can be obtained, and the present invention has been completed.

That is, an object of the present invention is to provide a positive photoresist composition which has high sensitivity, high resolution, excellent exposure latitude, and excellent focal depth width characteristics.

Another object of the present invention is to provide a positive photoresist composition having excellent solubility in a resist solution and excellent storage stability.

[0007]

To achieve the above object, the present invention provides (A) an alkali-soluble resin, (B) a quinonediazide group-containing compound, and (C) a polyhydroxy compound represented by the following formulas (4) to (6).

[0008]

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[0009]

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[0010]

Embedded image A positive photoresist composition comprising at least one selected from the group consisting of:

The alkali-soluble resin of the component (A) used in the present invention includes phenolic resins, hydroxystyrene polymers and their derivatives, acrylic resins and styrene, which are known as film-forming resins for positive photoresist compositions. And a copolymer of acrylic acid and the like.
Examples of the phenol resin include condensation reaction products of phenols and aldehydes, condensation reaction products of phenols and ketones, hydrogenation products of these phenol resins, among which phenol novolak resin, cresol Novolak resins are preferred because of their good developability and excellent plasma resistance. Examples of the phenols include phenol, m-cresol, p-cresol, 2,3-xylenol, 2,5-xylenol, 2,6-xylenol, 3,5-xylenol,
Monohydric phenols such as 2,3,5-trimethylphenol, ethylphenol, propylphenol, butylphenol, and phenylphenol; polyhydric phenols such as resorcinol, pyrocatechol, hydroquinone, bisphenol A, and pyrogallol; , As aldehydes, formaldehyde,
Acetaldehyde, benzaldehyde, hydroxybenzaldehyde, terephthalaldehyde and the like, and ketones include acetone, methyl ethyl ketone, diethyl ketone, diphenyl ketone and the like. One or more of these phenols are mixed with one or more of aldehydes or ketones in the presence of an acidic catalyst such as hydrochloric acid, sulfuric acid, p-toluenesulfonic acid, formic acid or oxalic acid. A phenol resin is synthesized by reacting the mixture with a conventional method. The hydrogenation reaction product of the phenolic resin can be produced by dissolving the resin in an organic solvent and introducing hydrogen in a homogeneous or heterogeneous system in the presence of a hydrogenation catalyst. Among them, m-cresol, p-cresol,
2,5-xylenol, 3,5-xylenol, 2,
A novolak resin obtained by condensation of several kinds of mixed phenols selected from 3,5-trimethylphenols with formaldehyde is preferred.

The hydroxystyrene polymer and its derivative include a homopolymer of hydroxystyrene and a component copolymerizable with hydroxystyrene, for example, acrylic acid derivative, methacrylic acid derivative, styrene derivative, maleic anhydride, vinyl acetate, acrylonitrile. And the like. Further, as the acrylic resin and the copolymer of styrene and acrylic acid, commercially available alkali-soluble resins are used.

The molecular weight of the alkali-soluble resin is 1,000 to 30,000, preferably 2,3, as a weight average molecular weight measured by gel permeation chromatography.
A range of 000 to 25,000 is selected. When the weight average molecular weight is less than 1,000, the film loss after development is large, and the pattern shape is deteriorated. When the weight average molecular weight exceeds 30,000, the development speed is reduced and the resolution is poor.

As the quinonediazide group-containing compound as the component (B) of the present invention, a completely or partially esterified product of a hydroxy compound and quinonediazidesulfonic acid is used. Examples of the hydroxy compound include polyhydroxybenzophenones, hydroxyaryls, bis (hydroxyphenyl) alkanes and phenols, and (i) polyhydroxybenzophenones include
Specifically, 2,3,4-trihydroxybenzophenone,
2,4,4'-trihydroxybenzophenone, 2,
4,6-trihydroxybenzophenone, 2,3,4
4'-tetrahydroxybenzophenone, 2,2 ',
4,4′-tetrahydroxybenzophenone, 2,
3 ′, 4,4 ′, 6-pentahydroxybenzophenone, 2,2 ′, 3,4,4′-pentahydroxybenzophenone, 2,2 ′, 3,4,5′-pentahydroxybenzophenone, 2,3 ′ , 4,5,5'-pentahydroxybenzophenone and 2,3,3 ', 4,4',
5′-hexahydroxybenzophenone and the like (i
i) As hydroxyaryls, compounds represented by general formula 7

[0015]

Embedded image (Wherein, R ^{1 to} R ³ are a hydrogen atom or a lower alkyl group, R ⁴
R ⁹ is a hydrogen atom, a halogen atom, a lower alkyl group, a lower alkoxy group, a lower alkenyl group or a cycloalkyl group, R ¹⁰ and R ¹¹ are a hydrogen atom, a halogen atom or a lower alkyl group, and X, Y and Z are 1 to An integer of 3 and n ′ is 0 or 1
It is. Specifically, tris (4-hydroxyphenyl) methane, bis (4-hydroxy-3,5)
-Dimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -3-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -2-hydroxyphenylmethane , Bis (4-hydroxy-2,5-dimethylphenyl) -3-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -4-
Hydroxyphenylmethane, bis (4-hydroxy-
2,5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -3,4-dihydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl)- 3,
4-dihydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -2,4-dihydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -2,4-dihydroxyphenylmethane, Bis (4-hydroxyphenyl) -3-methoxy-
4-hydroxyphenylmethane, bis (3-cyclohexyl-4-hydroxyphenyl) -3-hydroxyphenylmethane, bis (3-cyclohexyl-4-hydroxyphenyl) -2-hydroxyphenylmethane, bis (3-cyclohexyl-4- Hydroxyphenyl) -4
-Hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -2-hydroxyphenylmethane, bis (5-cyclohexyl-4)
-Hydroxy-2-methylphenyl) -3-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -4-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methyl) Phenyl) -3,4-dihydroxyphenylmethane, bis (3-cyclohexyl-6-hydroxyphenyl) -3-hydroxyphenylmethane, bis (3
-Cyclohexyl-6-hydroxyphenyl) -4-hydroxyphenylmethane, bis (3-cyclohexyl-
6-hydroxyphenyl) -2-hydroxyphenylmethane, bis (5-cyclohexyl-2-hydroxy-4)
-Methylphenyl) -2-hydroxyphenylmethane,
Bis (5-cyclohexyl-2-hydroxy-4-methylphenyl) -4-hydroxyphenylmethane, bis (5-cyclohexyl-2-hydroxy-4-methylphenyl) -3,4-dihydroxyphenylmethane, 1-
[1- (4-hydroxyphenyl) isopropyl] -4
-[1,1-bis (4-hydroxyphenyl) ethyl]
Benzene, 1- [1- (3-methyl-4-hydroxyphenyl) isopropyl] -4- [1,1-bis (3-methyl-4-hydroxyphenyl) ethyl] benzene and the like are also represented by general formula 8 Compound represented by

[0016]

Embedded image (Wherein T is a methoxy group or a hydroxyl group, a is 0 or 1), and specifically, bis (4-hydroxy-2,3,5-trimethylphenyl) -2-hydroxy Phenylmethane, bis (4-hydroxy-2,
3,5-trimethylphenyl) -3-hydroxyphenylmethane, bis (4-hydroxy-2,3,5-trimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-2,3,5-trimethylphenyl )
-3,4-dihydroxyphenylmethane, bis (4-hydroxy-2,3,5-trimethylphenyl) -4-hydroxy-3-methoxyphenylmethane and the like, and (iii) bis (hydroxyphenyl) alkanes A compound represented by the general formula 9

[0017]

Embedded image (Wherein R ¹² and R ¹³ represent a hydrogen atom or a lower alkyl group, X
^'And Y' are integers of 1 to 3), specifically, 2- (2,3,4-trihydroxyphenyl) -2.
-(2 ', 3', 4'-trihydroxyphenyl) propane, 2- (2,4-dihydroxyphenyl) -2-
(2 ′, 4′-dihydroxyphenyl) propane, 2-
(4-hydroxyphenyl) -2- (4′-hydroxyphenyl) propane, bis (2,3,4-trihydroxyphenyl) methane, bis (2,4-dihydroxyphenyl) methane and the like are (iv) phenols as,
Phenol, p-methoxyphenol, dimethylphenol, hydroquinone, naphthol, pyrocatechol, pyrogallol monomethyl ether, pyrogallol-1,3
-Dimethyl ether, gallic acid, partially esterified or partially etherified gallic acid and the like.

The quinonediazidesulfonic acid is represented by an ester moiety, and is represented by benzoquinone-1,2-diazido-4-sulfonic acid ester, naphthoquinone-1,2.
-Diazide-4-sulfonic acid ester, naphthoquinone-
Examples thereof include 1,2-diazide-5-sulfonic acid esters and other sulfonic acid esters of quinonediazide derivatives. Particularly, naphthoquinone-1,2-diazide-4 (or 5) -sulfonic acid ester is preferable. The quinonediazide group-containing compound as the component (B) of the present invention can be obtained by mixing the above-mentioned polyhydroxy compound and, for example, 1,2-naphthoquinonediazide-4 (or 5) -sulfonic acid halide with an organic solvent such as dioxane, N-methylpyrrolidone, It is synthesized by dissolving a predetermined amount in dimethylacetamide, dimethylformamide, tetrahydrofuran or the like, and performing an esterification reaction in the presence of a basic catalyst such as triethanolamine, triethylamine, pyridine, alkali carbonate or alkali hydrogen carbonate. The esterification rate based on the esterification reaction is preferably at least 50 mol%, and more preferably at least 60 mol% of the total number of hydroxyl groups of the hydroxy compound. If the esterification ratio is less than the above range, high resolution cannot be obtained.

The component (B) is contained in an amount of 1 to 50 parts by weight, preferably 5 to 35 parts by weight, based on 100 parts by weight of the component (A). When the content of the component (B) is less than 1 part by weight, an image cannot be formed, and when it exceeds 50 parts by weight, resolution and resist pattern shape are deteriorated, and sensitivity is lowered.

The positive photoresist composition of the present invention contains the component (C) polyhydroxy compound in addition to the above components (A) and (B). As the component (C), a polyhydroxy compound represented by the following formulas 10 to 12

[0021]

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[0022]

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[0023]

Embedded image At least one member selected from the group consisting of: (C)
By containing the components, the positive photoresist of the present invention is
It excels in sensitivity and resolution, and also exhibits excellent characteristics in exposure latitude and depth of focus. Among these components (C), the polyhydroxy compound represented by Chemical Formula 11 is preferable because it has particularly excellent resolution, improves the limit resolution, and has a wide depth of focus characteristic. Also, Chemical 1
The polyhydroxy compound represented by 2 is particularly excellent in sensitivity, has high solubility in a resist solvent, has no risk of forming a precipitate during storage as a resist solution, and is excellent in storage stability and is preferable.

The component (C) is contained in an amount of 5 to 100 parts by weight, preferably 10 to 50 parts by weight, based on 100 parts by weight of the component (A). If the amount of the component (C) is less than 5 parts by weight, the effect of the compounding will not be obtained.

Further, the positive photoresist composition of the present invention contains a compatible additive, an ultraviolet absorber for preventing halation, for example, 2,2 ', 4,4'-tetrahydroxybenzophenone, 4-dimethyl Amino-2 ',
4'-dihydroxybenzophenone, 5-amino-3-
Methyl-1-phenyl-4- (4-hydroxyphenylazo) pyrazole, 4-dimethylamino-4'-hydroxyazobenzene, 4-diethylamino-4'-ethoxyazobenzene, 4-diethylaminoazobenzene, curcumin, etc., and striation prevention Surfactants such as Florad FC-430, FC-43
1 (trade name, manufactured by 3M), F-top EF122
A, a fluorinated surfactant such as EF122B, EF122C, and EF126 (trade name, manufactured by Tochem Products Co., Ltd.) can be added and contained as long as the object of the present invention is not hindered. If necessary, conventional additives such as an additional resin, a plasticizer, a stabilizer, a colorant, a sensitizer, and a contrast improver can be added as long as the performance of the composition is not impaired.

In using the positive photoresist composition of the present invention, it is preferable to use the composition as a coating solution dissolved in an organic solvent in the same manner as in the conventional resist pattern forming method of the photoresist technique. Examples of the organic solvent include ketones such as acetone, methyl ethyl ketone, cyclohexane, methyl isoamyl ketone, and 2-heptanone; ethylene glycol, propylene glycol, diethylene glycol, ethylene glycol monoacetate, propylene glycol monoacetate, diethylene glycol monoacetate, or a mixture thereof. Polyhydric alcohols such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether and derivatives thereof; cyclic ethers such as dioxane; and methyl lactate, ethyl lactate, methyl acetate, methyl acetate, ethyl acetate, and acetic acid Esters such as butyl, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate and ethyl ethoxypropionate. Can. One or more of these organic solvents can be used in combination. A coating solution prepared by dissolving in these solvents is applied to a substrate such as a silicon wafer or glass by an arbitrary coating method such as a spinner, and dried to form a photosensitive layer.
Then, an electromagnetic wave such as far ultraviolet ray, excimer laser, X-ray or the like is irradiated through a mask pattern, or irradiation is performed while scanning a particle beam such as an electron beam. Immerse in an alkaline aqueous solution such as a methyl ammonium hydroxide aqueous solution,
The exposed part is selectively dissolved and removed to produce an image faithful to the mask pattern.

The above-described pattern forming method is not limited to processing of semiconductor devices and liquid crystal display devices, but is applied to fields of processing using lithography, for example, LCD, TAB, PC
B, chemical milling, printing, etc.

[0028]

Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

The numerical values shown in Examples and Comparative Examples are numerical values obtained by the following measuring methods. (1) Sensitivity: A sample was applied on a silicon wafer using a spinner, and this was applied on a hot plate at 90 ° C. and 90 ° C.
After drying for 1.0 second, a resist film having a thickness of 1.05 μm was obtained. The resist film was reduced to 0.1 to 0.1 μm using a reduction projection exposure apparatus NSR-2005i10D (manufactured by Nikon Corporation, NA = 0.57).
It was exposed at an interval of 01 seconds, developed with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide at 23 ° C. for 60 seconds, washed with water for 30 seconds, and dried. A measurement method that expresses the minimum exposure time in milliseconds (ms).

(2) Resolution: A measuring method for measuring a limit resolution at an exposure amount for reproducing a mask pattern of 0.45 μm.

(3) Exposure margin: Eop for sensitivity
(Exposure amount required to form a 0.45 μm line and space in a one-to-one relationship) is a measurement method in which an exposure margin is used.

(4) Depth of focus width 1: Reduction projection exposure apparatus N
SR-2005i10D (manufactured by Nikon Corporation, NA = 0.5
Using 7), Eop (exposure amount required to form a 0.45 μm line and space one-to-one) is set as a reference exposure amount, and the focus at the exposure amount is appropriately shifted up and down to expose and develop. And a SEM photograph of the obtained resist pattern is observed, and the maximum value (μm) of defocus at which a 0.45 μm rectangular resist pattern is obtained is defined as a depth of focus width 1.

(5) Depth of focus width 2: A measurement method in which the maximum value (μm) of defocus at which a rectangular resist pattern of 0.40 μm is obtained in the depth of focus width 1 is set to the depth of focus width 2.

(6) Depth of focus width 3: A measurement method in which the maximum value (μm) of defocus at which a rectangular resist pattern of 0.38 μm is obtained at the depth of focus width 1 is set to the depth of focus width 3.

(7) Depth of focus width 4: A measurement method in which the maximum value (μm) of defocus at which a rectangular resist pattern of 0.35 μm is obtained at the depth of focus width 1 is set to the depth of focus width 4.

Example 1 An alkali-soluble novolak resin having a weight average molecular weight of 8,000 was produced by condensing a mixture of m-cresol and p-cresol in a molar ratio of 4: 6 with formalin using an oxalic acid catalyst in a conventional manner. Then, the low molecular weight fraction was removed to obtain an alkali-soluble novolak resin having a weight average molecular weight of 10,000. 100 parts by weight of this novolak resin, bis (4-hydroxy-3,5-dimethylphenyl) -2
-1 mol of hydroxyphenylmethane and naphthoquinone-
30 parts by weight of an esterified product with 2.5 mol of 1,2-diazide-5-sulfonyl chloride and 20 parts by weight of a polyhydroxy compound represented by the following formula (13) were added to ethyl lactate 360
Dissolved in a mixed solvent of 40 parts by weight of butyl acetate and 40 parts by weight of butyl acetate, and filtered through a membrane filter having a pore size of 0.2 μm,
A positive photoresist composition was prepared.

[0037]

Embedded image A coating film was formed using the positive photoresist composition prepared above, and the sensitivity, resolution, exposure margin and depth of focus width characteristics 1 to 4 at that time were measured. Table 1 shows the results.
Shown in

Example 2 A positive photoresist composition was prepared in the same manner as in Example 1 except that the polyhydroxy compound represented by Chemical Formula 13 was replaced with a polyhydroxy compound represented by Chemical Formula 14 below. The coating film prepared and formed using the coating film was measured for its sensitivity, resolution, exposure margin and depth of focus width characteristics 1 to 4. Table 1 shows the results.

[0039]

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COMPARATIVE EXAMPLE 1 In Example 1, bis (2-hydroxy-4,6-dimethylphenyl) -2-hydroxyphenylmethane represented by Chemical Formula 13 was replaced with bis (4-hydroxy-2,5-dimethylphenyl)- A coating solution was prepared in the same manner as in Example 1 except that 2-hydroxyphenylmethane was used instead. The sensitivity, resolution, exposure latitude and depth of focus width characteristics 1 to 4 of the coating film formed using the prepared coating solution were measured. Table 1 shows the results.

COMPARATIVE EXAMPLE 2 In Example 1, bis (2-hydroxy-4,6-dimethylphenyl) -2-hydroxyphenylmethane represented by Chemical Formula 13 was replaced with bis (4-hydroxy-3,5-dimethylphenyl)- A coating solution was prepared in the same manner as in Example 1 except that 2-hydroxyphenylmethane was used instead. With respect to the coating film formed using the prepared coating solution, its sensitivity, resolution, exposure margin, and depth of focus width characteristics 1 to 4 were measured. Table 1 shows the results.

[0042]

[Table 1] Note) "No resolution" in the table name means that the resist pattern was not formed, and "Resolution only" means that the resist pattern was obtained but there was no depth of focus.

As can be seen from Table 1 above, the positive photoresist composition of the present invention is excellent in sensitivity, resolution, exposure latitude and depth of focus.

Example 3 The solubility of the polyhydroxy compounds used in Examples 1 and 2 and Comparative Examples 1 and 2 in a resist solvent was examined. Table 2 shows the results. The solubility was evaluated by the time required to form a 10 wt% solution of the polyhydroxy compound and stirring at room temperature to obtain a uniform solution.
の も の for less than 0 seconds, △ for 10-30 seconds
Those exceeding 0 seconds were evaluated as x.

[0045]

[Table 2] Note) ECA: Ethylene glycol monoethyl ether acetate

As apparent from Table 2 above, bis (4-hydroxy-3-methylphenyl) -2-hydroxyphenylmethane as the component (C) of the present invention has excellent solubility in a resist solvent and a photoresist composition containing the same. It can be seen that the product has excellent storage stability.

[0047]

As described above, the positive photoresist composition of the present invention comprises:
Excellent sensitivity, resolution, exposure margin and depth of focus characteristics,
In addition, it exhibits excellent storage stability and is suitable as a positive photoresist composition for manufacturing semiconductor devices, liquid crystal display devices, and the like.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kosuke Doi 150 Nakamaruko, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside Tokyo Keika Kogyo Co., Ltd. (72) Inventor Hidekatsu Ohara 150 Nakamaruko, Nakahara-ku, Kawasaki City, Kanagawa Prefecture (72) Inventor Toshimasa Nakayama 150 Nakamurako, Nakahara-ku, Kawasaki City, Kanagawa Prefecture

Claims (1)

[Claims] 1. It comprises at least one selected from the group consisting of (A) an alkali-soluble resin, (B) a quinonediazide group-containing compound, and (C) a polyhydroxy compound represented by the following formulas (1) to (3). Positive photoresist composition. Embedded image Embedded image Embedded image