JP3255378B2 - Positive photoresist composition - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel positive photoresist composition, and more particularly, to a composition having excellent characteristics such as sensitivity, resolution, depth of focus and heat resistance. The present invention relates to a positive photoresist composition having an excellent pattern shape in which the influence of interference is suppressed, that is, a standing wave effect and a notching phenomenon are suppressed.

[0002]

2. Description of the Related Art The degree of integration in the manufacture of semiconductor devices has rapidly increased in recent years, and in the manufacture of VLSIs and the like, the processing accuracy of submicron and half-micron ultrafine patterns is required. Therefore, for the positive photoresist composition used, excellent sensitivity, resolution,
It is desired to have properties such as depth of focus and heat resistance.

Further, in today's production of VLSI using optical lithography, development of a photoresist composition in which a standing wave effect is suppressed in addition to the above-mentioned resist characteristics is demanded.

However, a positive photoresist satisfying all these requirements has not been found so far.

For example, there has been proposed a method of forming a resist pattern using a photoresist having an increased esterification rate of hydroxybenzophenone for the purpose of suppressing the multiple reflection effect, the bulk effect, and the standing wave effect in a film (Japanese Patent Laid-Open No. HEI 9-163568). With this positive photoresist, although the suppression of the multiple reflection effect in the film, the bulk effect and the standing wave effect can be achieved to some extent, it is still insufficient and the sensitivity and resolution are not satisfactory. No, today ’s super LS
It cannot cope with the manufacture of the I element.

[0006]

SUMMARY OF THE INVENTION Under such circumstances, the present invention provides excellent characteristics such as sensitivity, resolution, depth of focus, heat resistance, etc., and makes it possible to reduce the difference between irradiation light and light reflected from a substrate. An object of the present invention is to provide a positive photoresist composition which suppresses the influence of interference, that is, the standing wave effect and the notching phenomenon, and gives an excellent pattern shape.

[0007]

The present inventors have conducted intensive studies to develop a high-quality positive photoresist composition. As a result, the quinonediazide group-containing compound and the specific benzophenone-based compound were added to the alkali-soluble novolak resin. It has been found that a compound containing the compound has good physical properties such as sensitivity, resolution, depth of focus, heat resistance, and optical characteristics and gives an excellent pattern shape, and based on this finding, the present invention has been completed.

That is, the present invention provides (A) an alkali-soluble novolak resin, (B) a quinonediazide group-containing compound, and (C) a compound represented by the general formula:

Embedded image (Wherein R ¹ and R ² in the formula are each a hydrogen atom or a lower alkyl group, which may be the same or different, and m is an integer of 1 to 3). A positive photoresist composition comprising a compound.

In the positive photoresist composition of the present invention, an alkali-soluble novolak resin is used as the film-forming substance of the component (A). There is no particular limitation on the alkali-soluble novolak resin, and in a conventional positive photoresist composition, an alkali-soluble novolak resin commonly used as a film-forming substance,
For example, a compound obtained by condensing an aromatic hydroxy compound such as phenol, cresol or xylenol with an aldehyde such as formaldehyde in the presence of an acidic catalyst can be used.

In the composition of the present invention, the alkali-soluble novolak type resin having a weight average molecular weight of 2,000 to 20,000, preferably 5,000 to 15,000, obtained by cutting a low molecular weight region, is preferably used. This is advantageous for obtaining things.

In the composition of the present invention, a quinonediazide group-containing compound is used as the photosensitive component of the component (B). Examples of the photosensitive component comprising the quinonediazide group-containing compound include (a) polyhydroxybenzophenones such as 2,3,4-trihydroxybenzophenone and 2,3,4,4'-tetrahydroxybenzophenone; -[1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene, (c) tris (4-hydroxyphenyl) methane, bis (4-hydroxy-3 , 5-
Dimethylphenyl) -4-hydroxyphenylmethane,
Bis (4-hydroxy-2,5-dimethylphenyl)-
Tris (hydroxy) such as 4-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -2-hydroxyphenylmethane and bis (4-hydroxy-2,5-dimethylphenyl) -2-hydroxyphenylmethane Phenyl) methanes or methyl-substituted products thereof, (d) bis (3-cyclohexyl-4-hydroxyphenyl) -3-hydroxyphenylmethane, bis (3
-Cyclohexyl-4-hydroxyphenyl) -2-hydroxyphenylmethane, bis (3-cyclohexyl-
4-hydroxyphenyl) -4-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2)
-Methylphenyl) -2-hydroxyphenylmethane,
Bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -3-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -4-hydroxyphenylmethane, bis (3-
Cyclohexyl-2-hydroxyphenyl) -3-hydroxyphenylmethane, bis (3-cyclohexyl-2)
-Hydroxyphenyl) -4-hydroxyphenylmethane, bis (3-cyclohexyl-2-hydroxyphenyl) -2-hydroxyphenylmethane, bis (5-cyclohexyl-2-hydroxy-4-methylphenyl)-
Tris (hydroxyphenyl) methanes such as 2-hydroxyphenylmethane, bis (5-cyclohexyl-2-hydroxy-4-methylphenyl) -4-hydroxyphenylmethane or a methyl-substituted product thereof, and naphthoquinone-1,2- Examples thereof include a completely esterified product and a partially esterified product with diazide-5-sulfonic acid or naphthoquinone-1,2-diazido-4-sulfonic acid.

Further, other quinonediazide group-containing compounds,
For example, ortho-benzoquinone diazide, ortho-naphthoquinone diazide, ortho-anthraquinone diazide or ortho-naphthoquinone diazidesulfonic acid esters and the like, and their core-substituted derivatives, further, ortho-quinone diazide sulfonium chloride and a compound having a hydroxyl group or an amino group,
For example, phenol, p-methoxyphenol, dimethylphenol, hydroquinone, bisphenol A, naphthol, pyrocatechol, pyrogallol, pyrogallol monomethyl ether, pyrogallol-1,3-dimethylether, gallic acid, esterified or etherified with a partial leaving of hydroxyl groups Reaction products with gallic acid, aniline, p-aminodiphenylamine and the like can also be used as the photosensitive component.

In the composition of the present invention, as the component (B), one kind of the above-mentioned quinonediazide group-containing compound may be contained, or two or more kinds thereof may be contained. The photosensitive component of the component (B) is the same as the component (A)
It is desirable to blend the component in an amount of 5 to 200 parts by weight, preferably 16 to 100 parts by weight, based on 100 parts by weight of the alkali-soluble novolak resin. If the compounding amount is less than 5 parts by weight, an image faithful to the pattern cannot be obtained, and the transferability decreases. If the compounding amount exceeds 200 parts by weight, the uniformity of the formed resist film decreases and the resolution deteriorates. There is a tendency.

In the composition of the present invention, a benzophenone compound represented by the above general formula (I) is used as the component (C). The benzophenone compounds represented by the general formula (I) are aminohydroxybenzophenones, for example, 4-amino-2'-hydroxybenzophenone, 4-amino-4'-hydroxybenzophenone, 4-amino-6'-hydroxybenzophenone , 4
-Dimethylamino-2'-hydroxybenzophenone,
4-dimethylamino-4'-hydroxybenzophenone, 4-dimethylamino-6'-hydroxybenzophenone, 2-dimethylamino-2 ', 4'-dihydroxybenzophenone, 4-dimethylamino-2', 4'-dihydroxybenzophenone, 6-dimethylamino-
2 ', 4'-dihydroxybenzophenone, 2-diethylamino-2', 4'-dihydroxybenzophenone,
4-diethylamino-2 ', 4'-dihydroxybenzophenone, 6-diethylamino-2', 4'-dihydroxybenzophenone, 2-dimethylamino-2 ',
4 ', 6'-trihydroxybenzophenone, 4-dimethylamino-2', 4 ', 6'-trihydroxybenzophenone, 6-dimethylamino-2', 4 ', 6'-trihydroxybenzophenone and the like. Also,
These may be used alone or in combination of two or more. Of these, particularly preferred is 4-dimethylamino-2 ', 4'-dihydroxybenzophenone.

In the composition of the present invention, the benzophenone compound as the component (C) is used in an amount of 0.1 to 1 based on 100 parts by weight of the alkali-soluble novolak resin as the component (A).
0 parts by weight, preferably 1 to 5 parts by weight. When the amount is less than 0.1 part by weight, the suppression of the reflected light is not sufficient, and when the amount exceeds 10 parts by weight, the effect is not improved for the amount, and the storage stability is rather lowered. Absent.

In the composition of the present invention, the above-mentioned polyhydroxybenzophenones and the above-mentioned 1- [1--
(4-Hydroxyphenyl) isopropyl] -4-
[1,1-bis (4-hydroxyphenyl) ethyl] benzene, or the above-mentioned tris (hydroxyphenyl) methanes and their methyl-substituted products can be used in combination. By using these compounds in combination,
A practical photoresist composition having excellent sensitizing effect, high sensitivity, and small dimensional change with respect to exposure can be provided.

Further, if desired, other sensitizers such as mercaptooxazole, mercaptobenzoxazole, mercaptooxazoline, mercaptobenzothiazole, benzoxazoline, benzothiazolone, mercaptobenzimidazole, and the like, as long as the object of the present invention is not impaired. Urazole, thiouracil, mercaptopyrimidine, imidazolone and derivatives thereof can be used in combination. These sensitizers may be used alone or in combination of two or more.

The compounding ratio is usually selected in the range of 0.1 to 30 parts by weight, preferably 0.5 to 25 parts by weight, based on 100 parts by weight of the alkali-soluble novolak resin.
If the amount is less than 0.1 part by weight, the sensitizing effect is not sufficiently exerted, and if it exceeds 30 parts by weight, the sensitizing effect cannot be obtained in spite of the amount, which is rather uneconomical.
The optimal use amount is appropriately selected according to the type of the photosensitive component.

Further, in the composition of the present invention, an isocyanurate compound may be blended as an auxiliary agent for improving the resolution and the residual film ratio. As the isocyanurate compound, for example, 1,3,5-tris (4-tert-butyl-3-hydroxy-2,6-
Dimethylbenzyl) isocyanurate, 1,3,5-tris (4-tert-butyl-3-hydroxy-2,6
-Diethylbenzyl) isocyanurate, 1,3,5-
Tris (3,5-di-tert-butyl-4-hydroxybenzyl) isocyanurate and the like can be mentioned. These may be used alone or in combination of two or more. The compounding ratio is usually 0.5 to 100 parts by weight of the alkali-soluble novolak resin.
15 parts by weight, preferably in the range of 1.0 to 10 parts by weight.

The composition of the present invention may further contain, if necessary, compatible additives such as an additional resin, a plasticizer, a stabilizer or a developed image for improving the performance of the resist film. A commonly used material such as a coloring agent for visualization can be added and contained.

The composition of the present invention comprises the alkali-soluble novolak resin (A), the photosensitive component (B), the benzophenone compound (C), and various additives used as required. Is preferably dissolved in a suitable solvent and used in the form of a solution.

Examples of the solvent used at this time include ketones such as acetone, methyl ethyl ketone, cyclohexanone and methyl isoamyl ketone, polyhydric alcohols such as ethylene glycol, diethylene glycol and propylene glycol, ethylene glycol monomethyl ether and diethylene glycol monomethyl ether. Alcohol ethers such as propylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, and propylene glycol monoethyl ether; ethers such as ethylene glycol dimethyl ether, diethylene glycol dimethyl ether and propylene glycol dimethyl ether; ethylene glycol monomethyl ether acetate and diethylene Polyhydric alcohol derivatives such as alcohol monomethyl ether acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene glycol monoethyl ether acetate, cyclic ethers such as dioxane, ethyl lactate, acetic acid Esters such as methyl, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate and ethyl methoxypropionate can be mentioned. These may be used alone or as a mixture of two or more.

Regarding the preferred method of using the composition of the present invention,
As an example, first, on a support such as a silicon wafer, the components (A), (B), (C) and optional components used as necessary were dissolved in the above-mentioned appropriate solvent. The solution is applied with a spinner or the like, dried to form a photosensitive layer, and then, using a light source that generates ultraviolet light, for example, a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, an arc lamp, a xenon lamp, or the like, through a desired mask pattern. Exposure, or irradiation while scanning an electron beam.
Next, when this is immersed in a developing solution, for example, a weakly alkaline aqueous solution such as a 1 to 10% by weight aqueous solution of tetramethylammonium hydroxide, the exposed portion is dissolved and removed, and an image faithful to the mask pattern can be obtained.

[0024]

As described above, the positive photoresist composition of the present invention comprises:
It has excellent characteristics such as sensitivity, resolution, depth of focus, and heat resistance, while suppressing the standing wave effect and the notching phenomenon.
Since it can provide a resist pattern having an excellent cross-sectional shape, it is particularly suitable as a resist for ultrafine processing in the manufacture of semiconductor devices such as ICs and LSIs.

[0025]

Next, the present invention will be described in more detail by way of examples, but the present invention is not limited to these examples.

The physical properties of the photoresist composition were determined as follows.

(1) Sensitivity: A sample was applied on a silicon wafer using a spinner and dried on a hot plate at 110 ° C. for 90 seconds to obtain a resist film having a thickness of 1.05 μm. A reduction projection exposure apparatus NSR-1755i7A (manufactured by Nikon Corporation, NA =
0.50) at 0.1-0.01 second intervals, and then developed with a 2.38 wt% aqueous solution of tetramethylammonium hydroxide for 1 minute, washed with water for 30 seconds and dried. Was measured in milliseconds (ms) as the minimum exposure time at which the film thickness of the exposed portion became zero.

(2) Resolution: The minimum size of the resist pattern that was resolved when exposed at the optimum exposure time was measured.

(3) Heat resistance: When a 5 μm resist pattern formed on a silicon wafer is baked on a hot plate at 125 ° C., 130 ° C., 135 ° C., and 140 ° C. for 5 minutes, the resist pattern becomes The temperature at which the deformation occurs is indicated.

(4) Pattern shape: The cross-sectional shape of the resist pattern having a width of 0.4 μm is determined by SEM (scanning electron microscope).
Observed in the photograph, the side was cut almost vertically, and the effect of the standing wave was suppressed was marked as ◎, and the tapered shape, but the effect of the standing wave was suppressed, was ○.
In addition, those having a wavy side surface and exhibiting the effect of the standing wave were evaluated as x.

(5) Notching: Several linear resist patterns formed in parallel on the plane of the sample were observed. O was observed when no deformation was observed, and X was obtained when each straight line was distorted. .

(6) Depth of focus width: Reduction projection exposure apparatus NS
Using R-1755i7A (manufactured by Nikon Corporation, NA = 0.50), Eop (minimum exposure time at which a 0.4 μm line and space is formed one-to-one) is set as a reference focus, and the focus from that point is set as the focus. Observation of the SEM photograph when it was shifted up and down as appropriate was performed. From the SEM photograph, the maximum value of defocus (μ
m) was defined as the depth of focus width. If A is 1.2 or more, 0.8
Above 1.1 or less is represented by B, 0.4 or more and 0.7 or less is represented by C, and 0.3 or less is represented by D.

Production Example 1 m-cresol and p-cresol were mixed in a weight ratio of 40: 6.
0, mixed with formalin, and subjected to a fractionation treatment on a cresol novolak resin obtained by condensation using an oxalic acid catalyst according to a conventional method. The low molecular weight region was cut to obtain a weight average molecular weight of 6,000. A cresol novolak resin was obtained.

Production Example 2 m-cresol and p-cresol in a weight ratio of 40: 6
0, mixed with formalin, and subjected to a fractionation treatment on a cresol novolak resin obtained by condensation using an oxalic acid catalyst according to a conventional method. The low molecular weight region was cut to obtain a resin having a weight average molecular weight of 12,000. A cresol novolak resin was obtained.

Production Example 3 m-cresol and p-cresol in a weight ratio of 60: 4
0, mixed with formalin, and subjected to a fractionation treatment on a cresol novolak resin obtained by condensation using an oxalic acid catalyst according to a conventional method. The low molecular weight region was cut to obtain a weight average molecular weight of 6,000. A cresol novolak resin was obtained.

Example 1 100 parts by weight of the cresol novolak resin obtained in Production Example 1, 1 mol of 2,3,4,4'-tetrahydroxybenzophenone and 3.5 mol of naphthoquinone-1,2-diazide-5-sulfonyl chloride Esterification reaction product 2
0 part by weight, formation of esterification reaction between bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -2-hydroxyphenylmethane 1 mol and naphthoquinone-1,2-diazido-5-sulfonyl chloride 2.0 mol Thing 6
20 parts by weight of 1- [1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene as a sensitizer
3,5-Tris (4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl) isocyanurate
After dissolving 2 parts by weight and 2 parts by weight of 4-dimethylamino-2 ', 4'-dihydroxybenzophenone in 350 parts by weight of ethylene glycol monoethyl ether acetate, the solution was filtered using a membrane filter having a pore size of 0.2 μm. A photosensitive composition was prepared. Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Example 2 In Example 1, 4-dimethylamino-2 ', 4'-
A photosensitive composition was obtained in the same manner as in Example 1, except that the amount of dihydroxybenzophenone was changed to 4.5 parts by weight. Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.
Shown in

Example 3 Using 100 parts by weight of the cresol novolak resin obtained in Production Example 2, 1 mol of 2,3,4,4'-tetrahydroxybenzophenone and naphthoquinone-1,2-diazide-
13 parts by weight of an esterification reaction product with 3.5 mol of 5-sulfonyl chloride, 1 mol of bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -2-hydroxyphenylmethane and naphthoquinone-1,2-diazide -
A photosensitive composition was obtained in the same manner as in Example 1, except that 13 parts by weight of an esterification reaction product with 2.0 mol of 5-sulfonyl chloride was used. Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Example 4 A photosensitive composition was prepared in the same manner as in Example 3 except that the amount of 4-dimethylamino-2 ', 4'-dihydroxybenzophenone was changed to 4.5 parts by weight. Obtained.
Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Example 5 A photosensitive composition was obtained in the same manner as in Example 3, except that the cresol novolak resin was changed to the resin obtained in Production Example 3. Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Example 6 A photosensitive composition was prepared in the same manner as in Example 5 except that the amount of 4-dimethylamino-2 ', 4'-dihydroxybenzophenone was changed to 4.5 parts by weight. Obtained.
Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Comparative Example 1 A photosensitive composition was obtained in the same manner as in Example 1 except that 4-dimethylamino-2 ', 4'-dihydroxybenzophenone was not added. Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Example 7 100 parts by weight of the cresol novolak resin obtained in Production Example 1, 1 mol of 2,3,4,4'-tetrahydroxybenzophenone and 3.5 mol of naphthoquinone-1,2-diazide-5-sulfonyl chloride Esterification reaction product 2
6 parts by weight, 1- [1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-
Hydroxyphenyl) ethyl] benzene 20 parts by weight,
1.2 parts by weight of 1,3,5-tris (4-tert-butyl 3-hydroxy-2,6-dimethylbenzyl) isocyanurate, 4-dimethylamino-2 ', 4'-dihydroxybenzophenone and 2 parts by weight After dissolving in 350 parts by weight of ethylene glycol monoethyl ether acetate, this was filtered using a membrane filter having a pore size of 0.2 μm to prepare a photosensitive composition. Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Example 8 A photosensitive composition was prepared in the same manner as in Example 7, except that the amount of 4-dimethylamino-2 ', 4'-dihydroxybenzophenone was changed to 4.5 parts by weight. Obtained.
Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Example 9 100 parts by weight of the cresol novolak resin obtained in Production Example 1 was mixed with bis (5-cyclohexyl-4-hydroxy-2-hydroxy).
26 parts by weight of an esterification reaction product of 1 mol of methylphenyl) -2-hydroxyphenylmethane and 2.0 mol of naphthoquinone-1,2-diazide-5-sulfonyl chloride, 1- [1- ( 4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene 20 parts by weight,
5-tris (4-tert-butyl 3-hydroxy-
After dissolving 1.2 parts by weight of (2,6-dimethylbenzyl) isocyanurate and 2 parts by weight of 4-dimethylamino-2 ', 4'-dihydroxybenzophenone in 350 parts by weight of ethylene glycol monoethyl ether acetate,
This was filtered using a membrane filter having a pore size of 0.2 μm to prepare a photosensitive composition. Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Example 10 A photosensitive composition was prepared in the same manner as in Example 9 except that the amount of 4-dimethylamino-2 ', 4'-dihydroxybenzophenone was changed to 4.5 parts by weight. Obtained.
Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Comparative Example 2 A photosensitive composition was obtained in the same manner as in Example 7, except that 4-dimethylamino-2 ', 4'-dihydroxybenzophenone was not added. Table 1 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

[0048]

[Table 1]

(Note) (1) m / p ratio: weight ratio of m-cresol and p-cresol (2) BP-1: 1 mol of 2,3,4,4'-tetrahydroxybenzophenone and naphthoquinone- Esterified product with 3.5 mol of 1,2-diazide-5-sulfonyl chloride (3) TP-1: 1 mol of bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -2-hydroxyphenylmethane and naphthoquinone -1,2-diazide-5
-Esterified product with 2 mol of sulfonyl chloride (4) ADD-1: 4-dimethylamino-2 ', 4'-
Dihydroxybenzophenone

Examples 11 to 14 The procedure of Example 7 was repeated, except that the photosensitive components, 4-dimethylamino-2 ', 4'-dihydroxybenzophenone and the amounts thereof were changed as shown in Table 2. hand,
A photosensitive composition was obtained. Table 2 shows the sensitivity, resolution, heat resistance, depth of focus, pattern shape, and physical properties of the notching phenomenon.

Comparative Example 3 A photosensitive composition was obtained in the same manner as in Example 11, except that 4-amino-2'-hydroxybenzophenone was not added. The sensitivity about this one,
Table 2 shows the physical properties of resolution, heat resistance, depth of focus, pattern shape and notching phenomenon.

[0052]

[Table 2]

(Note) (1) m / p ratio: blending weight ratio of m-cresol and p-cresol (2) BP-2: 1 mol of 2,3,4-trihydroxybenzophenone and naphthoquinone-1,2 -Diazide-5-
Esterified with 2.5 mol of sulfonyl chloride (3) TP-2: 1 mol of 1- [1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene (4) TP-3: 1 mol of bis (4-hydroxy-2,5-dimethylphenyl) -2-hydroxyphenylmethane and naphthoquinone- with 3 mol of naphthoquinone-1,2-diazide-5-sulfonyl chloride Esterified product with 2 mol of 1,2-diazide-5-sulfonyl chloride (5) TP-4: 1 mol of bis (4-hydroxy-3,5-dimethylphenyl) -2-hydroxyphenylmethane and naphthoquinone-1,2 -Diazide-5-sulfonyl chloride esterified with 2 mol (6) ADD-2: 4-amino-2'-hydroxybenzo Phenone (7) ADD-3: 4-diethylamino-2 ', 4'-
Dihydroxybenzophenone (8) ADD-4: 2-dimethylamino-2 ', 4'-
Dihydroxybenzophenone (9) ADD-5: 4-dimethylamino-2 ', 4',
6'-trihydroxybenzophenone

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Nobuo Tokutake 150 Nakamurako Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside Tokyo Oka Kogyo Co., Ltd. (72) Inventor Hidekatsu Ohara 150 Nakamaruko Nakahara-ku Kawasaki-shi Kanagawa Prefecture Tokyo Oka Kogyo Incorporated (72) Inventor Toshimasa Nakayama 150 Nakamaruko, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Within Tokyo Ohka Kogyo Co., Ltd. (56) References JP-A-5-119474 (JP, A) JP-A-2-248951 (JP) JP-A-2-132442 (JP, A) JP-A-2-84654 (JP, A) JP-A-2-24855 (JP, A) JP-A-64-44439 (JP, A) 4-214563 (JP, A) JP-A-1-15449 (JP, A) JP-A-61-241759 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G03F 7/00 -7/42

Claims (3)

(57) [Claims] 1. An alkali-soluble novolak resin (A), a quinonediazide group-containing compound (B), and (C) a general formula: (Wherein R ¹ and R ² in the formula are each a hydrogen atom or a lower alkyl group, which may be the same or different, and m is an integer of 1 to 3). And a compound. 2. The content of the benzophenone compound as the component (C) is 0.1 to 10 parts by weight per 100 parts by weight of the alkali-soluble novolak resin as the component (A).
The positive photoresist composition according to the above. 3. The positive photoresist composition according to claim 2, wherein the content of the benzophenone compound as the component (C) is 1 to 5 parts by weight per 100 parts by weight of the alkali-soluble novolak resin as the component (A).