JPH1041428A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide at low cost a semiconductor device which has a good radiation characteristic and high operation speed usable for various electronic apparatus by preventing semiconductor elements from malfunctioning by the switching noise increasing with the increase of the number of outputs and operation speed. SOLUTION: To power terminals and ground terminals of semiconductor elements 1 are connected to a conductor wiring 3 on which an insulative film 2 is formed. The film 2 has previously formed through-holes 6 charged with a conductive material 7, and metal plate 5 is electrically connected to the wiring 3 to thereby reduce the inductance of the power terminal and ground terminal of the semiconductor element 1 and suppress the switching noise to allow the semiconductor element to operate at high speed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used for various electronic devices.

[0002]

2. Description of the Related Art In recent years, with an increase in the number of outputs of a semiconductor element and an increase in operation speed, switching noise which is increased by performing a large number of switching processes at the same time causes a malfunction of the semiconductor element. In order to reduce the simultaneous switching noise, it has been conventionally proposed to reduce the inductance of the power supply terminal and the ground terminal of the semiconductor device.

Hereinafter, such a conventional semiconductor device will be described. FIG. 5 is a sectional view showing the structure of a conventional semiconductor device according to U.S. Pat. No. 4,937,707. In FIG. 5, reference numeral 1 denotes a semiconductor element;
Is connected to the semiconductor element 1 by conductor wiring patterned on the insulating film 2. 4 is a sealing resin for protecting the semiconductor element 1, 5 is a metal plate, 8 is a solder ball,
Reference numeral 10 denotes a conductor layer formed by vapor deposition and plating on the surface facing the conductor wiring 3 on the insulating film 2, and 11 denotes a through hole provided in the insulating film 2 by etching.
At the same time as the formation of the conductor layer 10, a conductive material is plated after being deposited. The conductor wiring 3 connected to the ground terminal of the semiconductor element 1 is electrically connected to the conductor layer 10 through the through hole 11.

With this configuration, the inductance of the power supply terminal and the ground terminal of the semiconductor element 1 can be reduced, the simultaneous switching noise can be reduced, and the speed of the semiconductor device can be increased.

[0005]

However, in the above-described conventional configuration, the tape carrier including the insulating film 2, the conductor wiring 3, the conductor layer 10, and the through hole 11 is copper-clad on both sides, and the manufacturing process involves etching and Because of the complicated steps such as vapor deposition, the tape carrier becomes very expensive, and as a result, there is a problem that the tape carrier can be used only for a limited number of semiconductor devices such as expensive semiconductor devices.

The present invention solves such a conventional problem,
It is an object of the present invention to provide an inexpensive semiconductor device capable of reducing simultaneous switching noise and enabling high-speed operation.

[0007]

According to the present invention, there is provided a semiconductor device according to the present invention, comprising: a tape carrier provided with a conductor wiring pattern-formed on a conductor layer adhered on an insulating film; A semiconductor element connected to
Electrically connecting the metal plate adhered to the insulating film, the solder balls formed on the conductor wiring, and the conductor wiring connected to the power supply terminal and the ground terminal of the semiconductor element and the metal plate; It is constituted by a through hole provided in the insulating film and a conductive material filled in the through hole.

According to the present invention, the inductance of the power supply terminal and the ground terminal of the semiconductor element can be easily reduced by using an inexpensive single-sided copper-clad tape carrier with a simple manufacturing process, and simultaneous switching noise can be reduced. A semiconductor device capable of suppressing a high-speed operation while suppressing it can be obtained.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is directed to a tape carrier having conductor wiring patterned on a conductor layer adhered on an insulating film, and a tape carrier connected to the conductor wiring. A semiconductor element, a metal plate adhered to the insulating film, a solder ball formed on the conductor wiring, and electrically connecting the conductor wiring and the metal plate connected to a power terminal and a ground terminal of the semiconductor element. A through hole provided in the insulating film to be electrically connected, and a conductive material filled in the through hole, and a power supply terminal and a ground terminal of the semiconductor element are connected to the connected conductor wiring. Is connected to the metal plate through the conductive material of the through-hole, the inductance of the power supply terminal and the ground terminal of the semiconductor element can be reduced, and the manufacturing process can be reduced. It has the effect of being able to Ryakuka.

According to a second aspect of the present invention, in the first aspect of the present invention, the semiconductor device has a configuration in which the solder balls are disposed immediately below the connection between the conductor wiring and the metal plate, and the connection length is shortest. Therefore, the inductance of the power supply terminal and the ground terminal of the semiconductor element can be reduced, the degree of freedom in designing the conductor wiring can be increased, the wiring density can be reduced, and the manufacturing yield can be improved, and an inexpensive semiconductor device can be realized. It has the action of:

According to a third aspect of the present invention, in the first or second aspect, the metal plate covers the semiconductor element.
The semiconductor element and the metal plate are made of a heat radiating material, and have an effect of suppressing a temperature rise during operation of the semiconductor element and realizing a higher speed operation of the semiconductor element. .

An embodiment of the present invention will be described below with reference to FIGS. (Embodiment 1) FIG. 1 is a cross-sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention. In FIG. 2 is a conductor wiring formed on 2, 4 is a sealing resin, 5
Is a metal plate, 6 is a through hole provided in the insulating film 2, 7 is a conductive material filled in the through hole 6, 8
Is a solder ball formed on the conductor wiring 3 as an external electrode of the semiconductor device. Note that the conductor wiring 3 is connected to the semiconductor element 1. The sealing resin 4 is for protecting the semiconductor element 1.

Hereinafter, a description will be given of a manufacturing process of the semiconductor device according to the present embodiment configured as described above.

First, in order to form a through hole 6 having a diameter of about 0.05 mm to 1 mm for connecting a power terminal and a ground terminal of the semiconductor element 1 to the metal plate 5 in the insulating film 2, a die punching is performed. Alternatively, it is formed by etching, laser processing, drill processing, or the like.

Next, a copper foil is adhered to the insulating film 2 as a conductor layer, and the conductor wiring 3 is formed by exposure and etching. This method is a general manufacturing method, and the description is omitted. One end of the wiring 3 and the semiconductor element 1 are electrically and mechanically TAB (Tape Automated).
d Bonding) method and the semiconductor element 1
The connection between the conductor wiring 3 and the conductor wiring 3 is protected by sealing with an insulating resin 4.

Next, the through hole 6 is filled with a conductive material 7. As the conductive material 7, a conductive resin obtained by adding a conductive filler such as copper particles, silver particles, and nickel particles to an insulating resin such as an epoxy resin or a silicone resin, or a metal such as solder is used.

Next, the power supply terminal and the ground terminal of the semiconductor element 1 are connected to the conductor wiring 3 by bonding the metal plate 5 to the insulating film 2, and the metal terminal 5 is connected to the metal via the conductive material 7 in the through hole 6. It is electrically connected to the plate 5.

As described above, according to the present embodiment, an inexpensive single-sided copper-clad tape carrier can be used with a simple manufacturing process, and the inductance of the power supply terminal and the ground terminal of the semiconductor element 1 is greatly reduced. And a semiconductor device in which simultaneous switching noise is suppressed can be realized by a simple process at a lower cost.

(Embodiment 2) FIG. 2 is a cross-sectional view showing a configuration of a semiconductor device according to a second embodiment of the present invention. In FIG. However, what is different from FIG. 1 is that the method of connecting the conductor wiring 3 and the semiconductor element 1 is a solder flip chip, C
4, SBB (stud bump bonding), MBB
(Micro-bump bonding) or the like is adopted and configured.

As described above, according to the present embodiment, the effect of greatly reducing the inductance of the power supply terminal and the ground terminal of the semiconductor element 1 is obtained, and a semiconductor device in which simultaneous switching noise is suppressed can be manufactured in a simple process. Moreover, it can be realized at a lower cost.

(Embodiment 3) FIG. 3 is a cross-sectional view showing the configuration of a semiconductor device according to a third embodiment of the present invention. In FIG. However, what is different from FIG. 1 is that a solder ball 8 is provided as an external electrode immediately below a through hole 6 connecting the conductor wiring 3 and the metal plate 5.

As described above, according to the present embodiment, since the wiring length of the power supply terminal and the ground terminal to the motherboard is the shortest, the effect of greatly reducing the inductance of the power supply terminal and the ground terminal of the semiconductor element is obtained. Is obtained,
Simultaneous switching noise is suppressed, and higher-speed operation of the semiconductor device can be realized.

Furthermore, the degree of freedom in designing the conductor wiring is increased, the wiring density can be reduced, and the manufacturing process can be simplified.

(Embodiment 4) FIG. 4 is a cross-sectional view showing a configuration of a semiconductor device according to a fourth embodiment of the present invention. In FIG. However, the difference from FIG. 1 is that the metal plate 5 has a shape that covers the semiconductor element 1 and the semiconductor element 1 and the metal plate 5 are bonded by a heat dissipating resin 9 that is a heat dissipating material. Is a point.

Although the semiconductor element 1 generally generates heat during operation, the higher the operation speed, the greater the amount of heat generated. As a result, the temperature of the semiconductor element 1 rises and causes a malfunction. The semiconductor element 1 and the metal plate 5 are bonded to each other with the heat radiation resin 9 in this manner, so that the heat of the semiconductor element 1 is transferred to the metal plate 5 through the heat radiation resin 9.
The effect that heat is radiated more directly is obtained.
Can be operated at a higher speed.

[0026]

As described above, the semiconductor device according to the present invention is provided on a single-sided copper-clad insulating film with a simple manufacturing process and is provided with a through-hole filled with a conductive material. Inductance can be reduced by electrically connecting the conductor wiring connected to the terminal and the ground terminal to the metal plate, and further by providing a solder ball as an external electrode immediately below the through hole. The length is the shortest and the inductance can be further reduced, and the semiconductor element is bonded to the metal plate with a heat-radiating resin. Nature,
The effect that a more stable high-speed operation can be obtained is obtained.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a cross-sectional view showing a configuration of a semiconductor device in Embodiment 2;

FIG. 3 is a cross-sectional view showing a configuration of the semiconductor device in Embodiment 3;

FIG. 4 is a cross-sectional view showing a configuration of a semiconductor device in Embodiment 4;

FIG. 5 is a cross-sectional view illustrating a configuration of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Insulating film 3 Conductor wiring 4 Sealing resin 5 Metal plate 6 Through hole 7 Conductive material 8 Solder ball 9 Heat dissipation resin

Claims (3)

[Claims] 1. A tape carrier having conductor wiring patterned on a conductor layer adhered on an insulating film, a semiconductor element connected to the conductor wiring, and a metal plate adhered to the insulating film A solder ball formed on the conductor wiring; and a through hole provided in the insulating film for electrically connecting the conductor wiring and the metal plate connected to a power terminal and a ground terminal of the semiconductor element. And a semiconductor device comprising a conductive material filled in the through hole. 2. The semiconductor device according to claim 1, wherein the solder balls are disposed immediately below a connection point between the conductor wiring and the metal plate. 3. The semiconductor device according to claim 1, wherein the metal plate covers the semiconductor element, and the semiconductor element and the metal plate are connected by a heat radiation material.
Or the semiconductor device according to 2.