JPH10336874A - Overcurrent protection device in semiconductor circuit breaker - Google Patents

Overcurrent protection device in semiconductor circuit breaker

Info

Publication number
JPH10336874A
JPH10336874A JP14696497A JP14696497A JPH10336874A JP H10336874 A JPH10336874 A JP H10336874A JP 14696497 A JP14696497 A JP 14696497A JP 14696497 A JP14696497 A JP 14696497A JP H10336874 A JPH10336874 A JP H10336874A
Authority
JP
Japan
Prior art keywords
overcurrent
circuit
level
detection
circuit breaker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14696497A
Other languages
Japanese (ja)
Inventor
Kunio Matsushita
邦雄 松下
Masaaki Ono
正明 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Shikoku Research Institute Inc
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Shikoku Research Institute Inc
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Shikoku Research Institute Inc, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP14696497A priority Critical patent/JPH10336874A/en
Publication of JPH10336874A publication Critical patent/JPH10336874A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To eliminate the unnecessary operation of overcurrent protection due to di/dt detection. SOLUTION: A device has a first overcurrent detection circuit 1 where an overcurrent is detected by a first overcurrent level that is determined by the amount of resistance of a semiconductor circuit, a second overcurrent detection circuit 2 where the overcurrent is detected by a second overcurrent detection circuit 2 that is obtained by subtracting the increment of a circuit break current being generated due to a device delay on the maximum di/dt to be predicted from the first overcurrent level, and a di/dt detection/level judgment circuit 3 where the di/dt level is compared with a specific set value. In this case, when the second overcurrent detection circuit 2 detects the covercurrent, the di/dt detection/level judgment circuit 3 breaks the semiconductor circuit breaker at a point in time when it is judged that the di/dt level is equal to or higher than the set value, thus eliminating an unnecessary operation in the case of circuit break only when the di/dt level is equal to or more than a set value. When the first overcurrent detection circuit 1 detects the overcurrent, the semiconductor circuit breaker is unconditionally breaks.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電源系統に使用さ
れる半導体遮断器、特に電源系統と自家発電機を連系す
る半導体遮断器の過電流保護装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor circuit breaker used for a power supply system, and more particularly to an overcurrent protection device for a semiconductor circuit breaker that connects a power supply system to a private power generator.

【0002】[0002]

【従来の技術】電力系統と連系運転する自家発電システ
ムは、図2に示すように、電力系統側の瞬時電圧低下に
よる発電機あるいは負荷機器のダウンを防止するため、
連系遮断器52Bと直列に半導体遮断器SSを接続し、
瞬時電圧低下検出回路11により系統の瞬時電圧低下を
検出し遮断回路13を介して半導体遮断器SSをオフ制
御し、連系を瞬時に遮断するように構成されている。
2. Description of the Related Art As shown in FIG. 2, an in-house power generation system connected to an electric power system operates to prevent a generator or a load device from being down due to an instantaneous voltage drop on the electric power system side.
Semiconductor breaker SS is connected in series with interconnection breaker 52B,
The instantaneous voltage drop detection circuit 11 detects an instantaneous voltage drop of the system, controls the semiconductor circuit breaker SS to be turned off via the interruption circuit 13, and instantaneously interrupts the interconnection.

【0003】このように電力系統に使用される半導体遮
断器SSは過電流耐量が小さいため、過電流を検出して
半導体遮断器SSをオフ制御する過電流保護回路12を
備えている。この過電流保護回路としては次のような装
置がある。
[0003] Since the semiconductor circuit breaker SS used in the power system has a small overcurrent withstand capability, the semiconductor circuit breaker SS is provided with an overcurrent protection circuit 12 for detecting an overcurrent and controlling the semiconductor circuit breaker SS to turn off. As the overcurrent protection circuit, there are the following devices.

【0004】(1)一般の過電流保護と同様に検出電流
がある設定値に達した時点で半導体遮断器をオフする過
電流検出方式。設定値は半導体遮断器の耐量により決め
る。 (2)電流の変化(di/dt)を検出し、di/dt
値が設定値より大きい時半導体遮断器をオフするdi/
dt検出方式。
(1) As in general overcurrent protection, an overcurrent detection method in which a semiconductor circuit breaker is turned off when a detection current reaches a certain set value. The set value is determined by the tolerance of the semiconductor circuit breaker. (2) detecting a change in current (di / dt),
When the value is larger than the set value, the semiconductor circuit breaker is turned off di /
dt detection method.

【0005】上記(1)の過電流検出方式では、検出電
流が設定値に達してから半導体遮断器をオフするため、
短絡時のようにdi/dt値が大きい場合は、その動作
遅れにより設定値よりも大きな電流を遮断することにな
る。di/dtを△I,動作遅れをtdとすると、図3
に示すように△I×tdだけ設定値ISよりも大きな電
流を切ることになり不都合がある。そのため、現在は上
記(2)のdi/dt検出方式が用いられている。
In the overcurrent detection method (1), the semiconductor circuit breaker is turned off after the detection current reaches a set value.
When the di / dt value is large as in the case of a short circuit, a current larger than the set value is cut off due to the operation delay. Assuming that di / dt is ΔI and the operation delay is td, FIG.
As shown in (1), a current larger than the set value I S by ΔI × td is cut off, which is inconvenient. Therefore, the di / dt detection method of (2) is used at present.

【0006】[0006]

【発明が解決しようとする課題】上記従来(2)のdi
/dt検出方式では、保護しなければならない短絡事故
時だけでなく、力率補償用のコンデンサの投入時のよう
に、電流値が半導体遮断器の耐量以内であってもdi/
dt値が大きい場合には半導体遮断器がオフされてしま
う。
The above-mentioned conventional (2) di
In the / dt detection method, not only in the event of a short circuit that must be protected but also when the current value is within the tolerance of the semiconductor circuit breaker, such as when a power factor compensation capacitor is turned on.
If the dt value is large, the semiconductor circuit breaker will be turned off.

【0007】本発明は、従来のこのような問題点に鑑み
てなされたものであり、その目的とするところは、di
/dt検出方式の過電流保護で生ずる不要動作を防止で
きる半導体遮断器の過電流保護装置を提供することにあ
る。
The present invention has been made in view of such conventional problems, and has as its object the purpose of di.
An object of the present invention is to provide an overcurrent protection device for a semiconductor circuit breaker that can prevent unnecessary operation caused by overcurrent protection of the / dt detection method.

【0008】[0008]

【課題を解決するための手段】本発明の半導体遮断器の
過電流保護装置は、装置通過電流の過電流を半導体遮断
器の耐量で決まる第1の過電流レベルで検出する第1の
過電流検出回路と、装置通過電流の過電流を前記第1の
過電流レベルから予想される最大di/dt時に装置の
動作遅れにより発生する遮断電流の増加分を差し引いた
第2の過電流レベルで検出する第2の過電流検出回路
と、装置通過電流のdi/dtを検出しそのdi/dt
レベルが所定の設定値以上かどうかを判定するdi/d
t検出・レベル判定回路とを有し、第2の過電流検出回
路が過電流を検出した場合、di/dt検出・判定回路
がdi/dtレベルが設定値以上と判定した時点で遮断
し、第1の過電流検出回路が過電流を検出した場合、無
条件に即時に遮断することを特徴とするものである。
According to the present invention, there is provided an overcurrent protection apparatus for a semiconductor circuit breaker, wherein a first overcurrent is detected at a first overcurrent level determined by a withstand voltage of the semiconductor circuit breaker. A detection circuit for detecting an overcurrent of the device passing current at a second overcurrent level obtained by subtracting an increase in a cutoff current caused by an operation delay of the device at a maximum di / dt expected from the first overcurrent level; A second overcurrent detecting circuit for detecting the di / dt of the device passing current and detecting the di / dt
Di / d for determining whether the level is equal to or higher than a predetermined set value
If the second overcurrent detection circuit detects an overcurrent, the di / dt detection / determination circuit shuts down when the di / dt level determines that the di / dt level is equal to or higher than a set value. When the first overcurrent detection circuit detects an overcurrent, the circuit is immediately unconditionally shut off.

【0009】[0009]

【発明の実施の形態】図1に実施の形態にかかる半導体
遮断器の過電流保護回路を示す。図1において、1及び
2はそれぞれ電流を設定値IS1及びIS2と比較し、電流
が大きくなったとき出力する第1及び第2の過電流検出
回路で、設定値IS1は従来過電流検出方式と同様に半導
体遮断器SSの耐量により決定され、設定値IS2はIS1
よりやや低く設定される。その設定値IS2は、予想され
る事故時の最大di/dtの場合に半導体遮断器SSの
動作遅れにより発生する遮断電流の増加分を半導体遮断
器SSの耐量から決められる設定値IS1から差し引いた
ものとする。
FIG. 1 shows an overcurrent protection circuit of a semiconductor circuit breaker according to an embodiment. In Figure 1, 1 and 2 are compared with the set value I S1 and I S2 of the current, respectively, the first and second overcurrent detection circuit that outputs when the current is increased, the set value I S1 conventional overcurrent are determined as detection method by tolerance of the semiconductor circuit breaker SS, set value I S2 is I S1
Set slightly lower. The set value I S2 is obtained by calculating the increase in the breaking current caused by the operation delay of the semiconductor circuit breaker SS in the case of the expected maximum di / dt at the time of an accident from the set value I S1 determined from the withstand capacity of the semiconductor circuit breaker SS. Shall be deducted.

【0010】3はdi/dt検出・レベル判定回路で、
di/dt検出回路31とその検出したdi/dt値を
設定値IS3と比較し、di/dt値が大きくなったとき
出力するレベル判定回路32からなり、その設定値IS3
は従来のdi/dt検出方式の設定値と同じくしてあ
る。
Reference numeral 3 denotes a di / dt detection / level judgment circuit.
It comprises a di / dt detection circuit 31 and a level judgment circuit 32 which compares the detected di / dt value with a set value I S3 and outputs when the di / dt value increases, and the set value I S3.
Is the same as the set value of the conventional di / dt detection method.

【0011】5は第2の過電流検出回路2が過電流検出
出力していることを条件にdi/dt検出・レベル判定
回路3の出力を通す論理積回路、6は第1の過電流検出
回路1の出力又は論理積回路5の信号を半導体遮断器S
Sの遮断回路13に出力させる論理和回路である。
Reference numeral 5 denotes an AND circuit for passing the output of the di / dt detection / level judgment circuit 3 on condition that the second overcurrent detection circuit 2 outputs an overcurrent detection, and 6 denotes a first overcurrent detection. The output of the circuit 1 or the signal of the AND circuit 5 is connected to the semiconductor circuit breaker S
This is a logical sum circuit to be output to the S cutoff circuit 13.

【0012】上記過電流保護回路の動作について説明す
る。常時、過電流検出回路1,2及びdi/dt検出・
レベル判定回路3で半導体遮断器SSの過電流及びdi
/dtを監視する。
The operation of the overcurrent protection circuit will be described. Always, overcurrent detection circuits 1 and 2 and di / dt detection
In the level judgment circuit 3, the overcurrent and di of the semiconductor circuit breaker SS
/ Dt is monitored.

【0013】半導体遮断器SSに事故電流が流れると、
まず低い方の過電流検出レベル(IS2)に達する。この
ときdi/dt検出回路31で検出されるdi/dtの
レベルをレベル判定回路32で判定し、そのレベルが設
定値IS3以上の場合は、この時点で保護が必要と判定し
論理積回路5,6を介して遮断回路13へ出力して半導
体遮断器SSを遮断し保護する。
When an accident current flows through the semiconductor circuit breaker SS,
First, it reaches the lower overcurrent detection level (I S2 ). At this time, the level of di / dt detected by the di / dt detection circuit 31 is determined by the level determination circuit 32. If the level is equal to or higher than the set value IS3 , it is determined that protection is necessary at this time, and the logical product circuit The signal is output to the shutoff circuit 13 via the switches 5 and 6 to shut off and protect the semiconductor circuit breaker SS.

【0014】事故電流が低い方の過電流検出レベル(I
S2)に達して過電流検出回路2が出力してもdi/dt
が小さい場合、di/dt検出・レベル判定回路3は出
力しないので、論理積回路5から出力されない。また、
この場合、動作遅れによる遮断電流(図3)の増加が少
なく、遮断電流が高い方の過電流検出レベル(IS1)に
達しないため、過電流検出回路1が出力することもない
ので、半導体遮断器SSが不要遮断されない。
The overcurrent detection level (I
S2 ) and the overcurrent detection circuit 2 outputs di / dt
Is small, the di / dt detection and level determination circuit 3 does not output, and therefore, is not output from the AND circuit 5. Also,
In this case, the increase in the cutoff current (FIG. 3) due to the operation delay is small, and the cutoff current does not reach the higher overcurrent detection level (I S1 ). The circuit breaker SS is not unnecessarily shut off.

【0015】また、力率補償用のコンデンサが投入され
た場合、di/dt検出・レベル判定回路3が出力して
も、その場合の電流は低い方の過電流レベル(IS2)に
達しないため、論理積回路5から出力されず、半導体遮
断器SSが不要遮断されることはない。
When the power factor compensating capacitor is turned on, even if the di / dt detection / level judgment circuit 3 outputs, the current in that case does not reach the lower overcurrent level (I S2 ). Therefore, the output is not output from the AND circuit 5, and the semiconductor circuit breaker SS is not unnecessarily interrupted.

【0016】事故電流が高い方の過電流検出レベル(I
S1)に達すると、過電流検出回路1が短絡事故と判断し
て動作し、論理和回路6を介して無条件で遮断回路13
に出力し、半導体遮断器SSを遮断し、保護する。
The overcurrent detection level (I
When S1 ) is reached, the overcurrent detection circuit 1 operates by judging that a short circuit has occurred, and unconditionally operates the cutoff circuit 13 via the OR circuit 6.
, To shut off and protect the semiconductor circuit breaker SS.

【0017】[0017]

【発明の効果】本発明は、上述のとおり構成されている
ので、次に記載する効果を奏する。
Since the present invention is configured as described above, the following effects can be obtained.

【0018】(1)短絡事故のようにdi/dtが高い
場合でも装置の動作遅れによる遮断電流の増加を防ぐこ
とができる。
(1) Even when di / dt is high as in the case of a short circuit, an increase in the breaking current due to the operation delay of the device can be prevented.

【0019】(2)コンデンサ投入時のようにdi/d
tが高いが電流値が低い場合の不要動作を防ぐことがで
きる。
(2) di / d as when a capacitor is turned on
Unnecessary operation when t is high but the current value is low can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施の形態にかかる半導体遮断器の保護回路構
成を示すブロック図。
FIG. 1 is a block diagram showing a protection circuit configuration of a semiconductor circuit breaker according to an embodiment.

【図2】半導体遮断器の接続例を示すブロック図。FIG. 2 is a block diagram showing a connection example of a semiconductor circuit breaker.

【図3】装置動作遅れによる電流増加を説明する線図。FIG. 3 is a diagram illustrating a current increase due to a device operation delay.

【符号の説明】[Explanation of symbols]

1,2…過電流検出回路 3…di/dt検出・レベル判定回路 11…瞬時電圧低下検出回路 12…過電流保護回路 13…遮断回路 SS…半導体遮断器 52B…連系遮断器 1, 2, overcurrent detection circuit 3, di / dt detection / level determination circuit 11, instantaneous voltage drop detection circuit 12, overcurrent protection circuit 13, interruption circuit SS, semiconductor circuit breaker 52B, interconnected circuit breaker

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 装置通過電流の過電流を半導体遮断器の
耐量で決まる第1の過電流レベルで検出する第1の過電
流検出回路と、 装置通過電流の過電流を前記第1の過電流レベルから予
想される最大di/dt時に装置の動作遅れにより発生
する遮断電流の増加分を差し引いた第2の過電流レベル
で検出する第2の過電流検出回路と、 装置通過電流のdi/dtを検出しそのdi/dtレベ
ルが所定の設定値以上かどうかを判定するdi/dt検
出・レベル判定回路とを有し、 第2の過電流検出回路が過電流を検出した場合、di/
dt検出・判定回路がdi/dtレベルが設定値以上と
判定した時点で遮断し、第1の過電流検出回路が過電流
を検出した場合、無条件に即時に遮断することを特徴と
する半導体遮断器の過電流保護装置。
1. A first overcurrent detection circuit for detecting an overcurrent of a device passing current at a first overcurrent level determined by a withstand voltage of a semiconductor circuit breaker, and detecting the overcurrent of the device passing current with the first overcurrent. A second overcurrent detection circuit for detecting at a second overcurrent level obtained by subtracting an increase in a breaking current caused by an operation delay of the device at the time of maximum di / dt expected from the level, and a di / dt of a device passing current. And a di / dt detection / level judgment circuit for judging whether or not the di / dt level is equal to or more than a predetermined set value. When the second overcurrent detection circuit detects an overcurrent, di / dt
A semiconductor device characterized in that when the dt detection / judgment circuit judges that the di / dt level is equal to or higher than a set value, the dt detection / judgment circuit shuts off the current. Circuit breaker overcurrent protection device.
JP14696497A 1997-06-05 1997-06-05 Overcurrent protection device in semiconductor circuit breaker Pending JPH10336874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14696497A JPH10336874A (en) 1997-06-05 1997-06-05 Overcurrent protection device in semiconductor circuit breaker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14696497A JPH10336874A (en) 1997-06-05 1997-06-05 Overcurrent protection device in semiconductor circuit breaker

Publications (1)

Publication Number Publication Date
JPH10336874A true JPH10336874A (en) 1998-12-18

Family

ID=15419573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14696497A Pending JPH10336874A (en) 1997-06-05 1997-06-05 Overcurrent protection device in semiconductor circuit breaker

Country Status (1)

Country Link
JP (1) JPH10336874A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010063231A (en) * 1999-12-22 2001-07-09 이형도 Over voltage protection
CN103078520A (en) * 2011-10-26 2013-05-01 乐星产电(无锡)有限公司 Frequency converter device and over-current protection method thereof
JP2016021859A (en) * 2014-07-15 2016-02-04 エルエス産電株式会社Lsis Co., Ltd. High-speed accident current detection circuit
FR3089707A1 (en) * 2018-12-11 2020-06-12 Safran Electrical & Power Electronic power outage system with a quick outage solution.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010063231A (en) * 1999-12-22 2001-07-09 이형도 Over voltage protection
CN103078520A (en) * 2011-10-26 2013-05-01 乐星产电(无锡)有限公司 Frequency converter device and over-current protection method thereof
JP2016021859A (en) * 2014-07-15 2016-02-04 エルエス産電株式会社Lsis Co., Ltd. High-speed accident current detection circuit
US9599654B2 (en) 2014-07-15 2017-03-21 Lsis Co., Ltd. Fault current detecting circuit
FR3089707A1 (en) * 2018-12-11 2020-06-12 Safran Electrical & Power Electronic power outage system with a quick outage solution.

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