JPH1032159A - Method of manufacturing aligner, reflection mask and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an aligner, capable of facilitating the design modification at low manufacturing cost also expanding the exposure area. SOLUTION: An aligner is provided with a light source part 11 capable of pulse-irradiating with the light with a wavelength fit for exposure at a proper interval, an illuminating optical system 12 arranged underneath the light source part 11, a transmission-type mask 13, whereon a plurality of basic pattern figures are drawn arranged underneath the illuminating optical system 12, an image-forming optical system 14 for image-forming the transmission light from the transmission-type mask 13, as well as a wafer stage 18 movably holding a waver 15 as a sensing substrate transferable of a mask pattern through the image-forming optical system 14. Furthermore, the illuminating optical system 12 can illuminate the position of a specific basic pattern figure only on the transmission type mask 13, and the position capable of being illuminated is also to be controlled by an illuminating optical system controller 17.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an exposure apparatus, a reflection mask and a device manufacturing method for manufacturing a device such as a semiconductor device or a micro device.

[0002]

2. Description of the Related Art FIG. 18 is a schematic view showing a conventional exposure apparatus and a manufacturing method using the same. The conventional exposure apparatus shown in FIG. 1 depicts a light source unit 101, an imaging optical system 103 disposed immediately below the light source unit 101, and a circuit and the like that can be arranged at an object position of the imaging optical system 103. A certain mask 10
2 and a wafer 104 that can be arranged at the image plane position of the imaging optical system 103. In addition, this device includes a light source 101
And a transfer system 107 for transferring the mask 102 from the mask library 108 holding a large number of masks to a position between the light source unit 101 and the imaging optical system 103. A controller 105 is provided.

In such a conventional exposure apparatus, first, a wafer 104 coated with a resist is transferred to a wafer stage 110 by a wafer transfer system 107, and the wafer stage 10 is moved to an image plane position of the image forming optical system 3 to perform exposure. The position is determined. Next, the mask 102 on which the desired circuit is drawn is placed at the object position of the imaging optical system 103, and the mask library 10
8 and transported by the transport system 107. The mask 102 is illuminated with light from the light source unit 101, and a circuit drawn on the mask 102 forms an image on the wafer 104. Reference numeral 109 denotes a mask projection image projected on the wafer 104. After one portion of the wafer 104 is exposed, the wafer is moved by one exposure area by the wafer stage 110, and exposure is performed again after positioning. After the same circuit is repeatedly exposed on the entire surface of the wafer by repeating this, the wafer transfer system 107 transfers the next wafer.

[0004] The wafer on which the circuit is transferred over the entire surface is transferred from the exposure apparatus to another processing apparatus, and undergoes a development step and the like. In order to superimpose a large number of circuit patterns when manufacturing one IC, the wafer is subjected to various steps, coated with a resist again, and transferred to an exposure apparatus.

In the exposure apparatus, each time a mask on which a circuit pattern necessary for the layer is drawn is selected from a mask library, and the wafer is exposed.

FIG. 19 shows a wafer exposed using a conventional exposure apparatus and mask. Reference numeral 511 denotes a mask, reference numeral 512 denotes a wafer, and reference numeral 513 denotes an exposed device pattern. Thus, when exposure is performed using the conventional exposure apparatus and mask, one mask can expose only the same pattern.

[0007]

However, in the above-mentioned exposure apparatus, the production of a mask as a circuit original is expensive, and a large number of masks are required to produce one IC. Only some mass-produced manufacturers for mass production can produce ICs, and it is difficult to produce a small number of special ICs and devices. There is also a problem that the design is not easily changed because the mask is expensive.

In addition, every time a mask is replaced, the precision of holding the mask must be controlled to a high degree, and a high degree of alignment is repeatedly performed, resulting in a decrease in throughput.

Further, there is a problem that fine dust, dust and the like are easily generated when the mask is replaced.

In view of the above-mentioned problems of the prior art, the present invention provides an exposure apparatus, a reflection mask, and a device manufacturing method which are inexpensive in manufacturing cost, can be easily changed in design, and can enlarge an exposure area. It is in. That is, it is an object of the present invention to provide an exposure apparatus, a reflection mask, and a device manufacturing method capable of exposing many different circuit patterns with a mask having a basic pattern figure.

[0011]

According to a first aspect of the present invention, there is provided an illumination optical system, an imaging optical system disposed opposite to the illumination optical system, and an object position of the imaging optical system. A transmission mask on which a plurality of basic pattern figures are drawn,
A stage fixedly holding a photosensitive substrate at an image plane position of the imaging optical system and moving in a first direction perpendicular to an optical axis of the imaging optical system; This is an exposure apparatus configured so that only the position of a desired basic pattern figure on a mold mask can be illuminated. More preferably, the photosensitive substrate at the image plane position of the imaging optical system is moved in the first direction by the stage, and a position on the photosensitive substrate where a desired basic pattern graphic is to be transferred is the desired basic pattern. When it matches the imaging position of the pattern figure,
The illumination optical system is an exposure device configured to enable illumination only at the position of the desired basic pattern graphic.

In the exposure apparatus according to the first invention,
The transmission type mask has a plurality of the same basic pattern figures,
The same basic pattern figure is formed on the transmission mask such that the transmission mask is aligned in a second direction orthogonal to the first direction on an image plane when the transmission mask is imaged by the imaging optical system. It is characterized by being arranged.

According to a second aspect of the present invention, there is provided an illumination optical system, a transmissive mask arranged opposite to the illumination optical system and having a plurality of basic pattern figures drawn thereon, and a close proximity to the transmissive mask. A stage that opposes and holds the photosensitive substrate and moves in a first direction parallel to the substrate surface of the photosensitive substrate;
And the illumination optical system is an exposure apparatus configured to enable illumination of a position of a desired basic pattern figure on the transmission type mask. More preferably, the photosensitive substrate is moved in the first direction by the stage, and a position on the photosensitive substrate at which a desired basic pattern graphic is to be transferred coincides with an imaging position of the desired basic pattern graphic. In some cases, the illumination optical system is an exposure apparatus configured to enable illumination only at the position of the desired basic pattern graphic.

In the exposure apparatus according to the second invention,
The transmission type mask has a plurality of the same basic pattern figures,
The same basic pattern graphic is arranged on the transmissive mask so as to be arranged in a second direction orthogonal to the first direction.

In the exposure apparatus according to the first and second aspects of the present invention, the light source emits a pulsed light, or the light source emits a continuous light. The state in which the position of the desired basic pattern graphic can be illuminated is controlled in a pulsed manner.

Further, the transmission type mask is exchangeable.

According to a third aspect of the present invention, there is provided a reflection mask in which minute light deflecting surfaces capable of controlling displacement are arranged in an array, and a basic pattern figure for device exposure is formed on the deflecting surface. It is.

In this reflection mask, the minute light deflecting surface is formed of a light reflector, and the basic pattern figure is formed of a light absorber, or the minute light deflecting surface is formed of a light absorber. The basic pattern figure may be formed by a light reflector.

Also, the reflection mask has two or more minute light deflecting surfaces having the same basic pattern figure, and the minute light deflecting surface having the same basic pattern figure in the first direction on the reflection mask. The second minute light beams are arranged so as to correspond to the positions of the gaps between the minute light deflecting surfaces in the row of the first minute light deflecting surfaces arranged in the first direction. It is also characterized in that the rows of deflection surfaces are arranged.

Further, in order to achieve the above object, a fourth aspect of the present invention provides a light source unit, a reflection mask having the above configuration illuminated by the light source unit, and an image forming optical system arranged to face the reflection mask. A stage that fixedly holds a photosensitive substrate at an image plane position of the imaging optical system and moves in a second direction perpendicular to the optical axis of the imaging optical system and orthogonal to the first direction;
And the reflection mask is an exposure apparatus configured so that only a desired minute light deflection surface on the mask is exposed. More preferably, the stage moves the photosensitive substrate at the image plane position of the imaging optical system in the second direction, and the position on the photosensitive substrate where a desired basic pattern graphic is to be transferred is the desired basic pattern. The reflection mask is an exposure apparatus configured to bring only the minute light deflecting surface on which the desired basic pattern figure is formed, into an exposure state, when the position coincides with the imaging position of the pattern figure.

The exposure apparatus according to the fourth aspect of the present invention comprises:
The light source emits pulsed light, and includes one in which the reflection mask is replaceable.

The present invention also includes a device manufacturing method for manufacturing a device using the exposure apparatus having the above configuration.

(Operation) In the invention configured as described above, it is desired to use a mask on which basic pattern figures are arranged, move a photosensitive substrate facing the mask, and transfer a desired basic pattern figure on the photosensitive substrate. When the position coincides with the exposure position of the desired basic pattern graphic, only the position on the mask where the desired basic pattern graphic is arranged is controlled to be illuminable or exposed, and the light source is directed toward the mask. By emitting light, desired basic pattern figures are sequentially exposed at desired positions on the photosensitive substrate. In this case, the exposure area can be increased by arranging the same basic pattern figure in one direction of the mask and exposing while moving the mask and the photosensitive substrate relatively in-plane in the direction perpendicular to the arrangement direction of the same pattern. become.

As described above, since a plurality of different circuit patterns can be exposed by combining the basic pattern figures, a large number of expensive masks are not required, the design can be easily changed, and the exposure area can be reduced. An exposure apparatus capable of expanding without being restricted by the aberration correction range can be provided.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments without departing from the technical scope of the present invention.

(First Embodiment) FIG. 1 is a schematic diagram showing the overall configuration of a first embodiment of the exposure apparatus of the present invention.

As shown in FIG. 1, the exposure apparatus of the present embodiment includes a light source unit 11 capable of irradiating light of a wavelength suitable for exposure with a pulse with a proper time width, and an illumination optical system disposed immediately below the light source unit 11. 12 and a transmissive mask 13 disposed immediately below the illumination optical system 12 and depicting a plurality of basic pattern figures (FIG. 3B).
), An imaging optical system 14 for imaging transmitted light of the transmission mask 13, and a wafer weight 18 capable of moving and holding a wafer 15 as a photosensitive substrate onto which a mask pattern is transferred through the imaging optical system 14. , Is provided. The transmission mask 13 is set at the object position of the imaging optical system 14, and the wafer 15 is set at the image plane position of the imaging optical system 15. Also,
The illumination optical system 12 enables illumination only at the position of a desired basic pattern figure on the transmission mask, and the illumination possible position is controlled by the illumination optical system control device 17. Further, such an exposure apparatus includes a light source unit 11,
It has a controller 16 for giving desired operation commands to the wafer stage 18 and the illumination optical system controller 17 respectively.

The operation of the above apparatus will be described below. First, a wafer 15 coated with a resist is placed on a wafer stage 18 by a wafer transfer system (not shown), and then the wafer 15 is imaged by the wafer stage 18. It is moved to the image plane position of the optical system 14 and positioned at the exposure start position.

The wafer stage 1 is controlled by the controller 16.
8 is started. The wafer 15 moves, and the illumination optical system controller 17 is controlled by a command from the controller 16.
Controls the illumination optical system 12 so that only a desired position on the transmission mask 13 corresponding to the current wafer position can be illuminated. Similarly, the light source unit 11 emits pulsed light according to a command from the controller 16, and only the basic pattern graphic at the illuminated position on the transmission mask 13 is imaged on the wafer 15 by the imaging optical system 14, and one of the circuit patterns It is transferred onto the wafer 15 as a part. When the position at which the desired basic pattern is to be transferred coincides with the image forming position of the desired basic pattern on the wafer 15, the illumination optical system control device 17 The illumination optical system 12 is controlled so that only the position of the desired basic pattern can be illuminated, and when the light source unit 11 emits pulse light, the desired basic pattern is imaged by the imaging optical system 14.

When this operation is repeated, the pattern constituted by the basic pattern is exposed on the wafer when the wafer has passed through the image forming area of the transmission mask, and one exposure is completed.

The light source unit 11 may be composed of a light source that performs controlled pulse oscillation, or may be a unit that has a shutter installed in front of a light source that continuously oscillates and controls oscillation at predetermined time intervals. In the above-described apparatus, the wafer stage 18 is moved at a constant speed. However, the wafer stage 18 may be moved in a step or a movement including acceleration.

In order to realize the object of the present invention, the image forming optical system may be a refractive optical system, a reflective optical system, or a catadioptric optical system.

Next, the configuration of the illumination optical system 12 will be described in detail.

FIG. 2 shows an illumination optical system used in the first embodiment of the present invention. As shown in FIG.
Is a homogenizer 22, a relay lens 23, and a transmission shutter 2 between the light source 11 and the transmission mask 13.
4, a configuration in which a relay lens 25 and a relay lens 26 are combined in this order.

The transmission type shutter 24 is a relay lens 2
The relay lenses 25 and 26 are arranged at positions conjugate with the transmission mask 13 in the range of the light flux limited by the pupils 3 and 25. It can be controlled dimensionally.

The light from the light source 11 is turned into an infinite number of point light sources by the homogenizer 22 and is incident on a lens group including the relay lens 23. The countless point light sources are imaged by the relay lenses 23 and 25 at the position indicated by the arrow a. The relay lens 26 has an effect of irradiating the transmission mask 13 uniformly from each point light source formed as an image. Further, since the transmitted light of the transmission type shutter 24 is imaged on the transmission type mask 13 by the relay lenses 25 and 26, the light blocked by the shutter 24 does not reach the transmission type mask 13, and the transmission type mask 13 A light beam having a shape transmitted through the transmission type shutter 24 is exposed. Therefore, it is possible to irradiate an arbitrary basic pattern of the transmission mask 13.

Although the transmission type shutter is shown here, a reflection type shutter can be used as long as it can be controlled two-dimensionally.

Next, the transmission mask 13 used in the above-described exposure apparatus will be described. FIG. 3 is a schematic diagram of a transmission mask used in the first embodiment of the present invention. This figure 3
(A) shows the size of a basic pattern figure as one circuit component, and is several mm depending on the circuit to be exposed.
A size of several tens μm square from a corner is possible. FIG. 3 (b)
Is a transmission type mask composed of 9 × 6 basic pattern figures, in which figures which are basic patterns of the device as indicated by reference numerals 31 to 36 are arranged in a grid pattern. In FIG. 3B, a plurality of the same basic patterns are arranged in the horizontal direction. Here, for the sake of convenience in the drawing, the number of cells, that is, the number of basic pattern figures is only 9 × 6, but in actuality, several thousand × thousands of basic pattern figures are drawn on a transmission mask depending on the size of the basic pattern. It is possible to FIG. 3C shows a circuit composed of basic pattern figures 31 to 37.

Next, with reference to FIGS. 4 and 5, the procedure of exposure by the above-described exposure apparatus will be described in detail.

FIG. 4 is a view showing the image plane position of the above-mentioned image forming optical system 14. As shown in FIG. In this figure, reference numeral 41 denotes an exposure area and an exposure pattern at the image plane position of the imaging optical system 14 when the entire transmission mask is exposed. Since the same basic pattern is arranged in the longitudinal direction on the transmission mask, the arrow 46
As shown in the figure, the image forming positions of the same basic pattern are arranged in the longitudinal direction of the exposure area. Reference numeral 42 indicates a region of the wafer to be exposed, and reference numeral 43 indicates a region where exposure has been completed, which indicates a circuit. The wafer moves on the wafer stage so as to pass through the exposure area 41 in the directions of arrows 44 and 45.

FIG. 5 shows how the circuits shown in FIGS. 3C and 4 are formed by exposure. Exposure is completed in nine steps of moving downward in the figure from the left end (a) to the right end (i) in the drawing. A black pattern indicates a pattern that has already been exposed, and a dotted pattern indicates a pattern that has been exposed in that step. Reference numeral 47,
Reference numerals 48, 49, 410, 411, and 412 denote basic patterns exposed in each step, and a two-dot chain line shows an area where each basic pattern is exposed.

First, when the wafer advances to the position (a) in the drawing, there is a position on the wafer where the basic pattern 47 is desired to be transferred. The illumination optical system 12 is controlled so as to irradiate only the cells in the area and not to irradiate the other cells,
The light source emits pulse light. Thereby, a part 413 of the pattern is exposed.

Further, when the wafer advances to the position (b) in the figure, since there is a position where the basic pattern 47 is to be transferred again, the desired mesh on the transmission type mask is controlled to be in the irradiation state, and the light source unit is controlled. Part 4 of the pattern by the pulse emission of
14 is exposed.

Next, when the wafer advances to the position (c) in the figure, since there is no position where the basic pattern is to be transferred at the image forming position of the basic pattern, the illumination optical system 12 is controlled so that the transmission mask is not irradiated at all. Is controlled.

The wafer further advances, and at the position (d) in the figure, the image formation position of the basic patterns 48 and 49 coincides with the position where the respective basic patterns 48 and 49 are to be transferred. Are controlled to be in an irradiation state, and a part 41 of the pattern is
5,416 are exposed.

As described above, when the wafer is sequentially advanced, the wafer passes through the exposure regions of all the basic patterns.
When passing through the exposure area 41 shown in FIG. 4, the exposure of the circuit is completed as shown in FIG.

The time width of the light emission pulse of the light source is determined by the fineness of the exposure pattern when the wafer is exposed while moving at a constant speed or a constant acceleration. And In the case of performing exposure by step movement, the wafer is stepped, and a time width shorter than the time during which the wafer is stationary is set as a pulse width.

When the exposure apparatus of this embodiment is used for mass production of the same circuit, after exposing one circuit, the wafer is moved and positioned by the wafer stage to the next exposure position, and then the same circuit is transferred.

When mass production of the same circuit is not intended, but a large number of different circuits are to be manufactured, for example, the wafer is moved and positioned by the wafer stage to the next exposure position, and then the controller sends a command to the illumination optical system controller. The illumination optical system is controlled according to another circuit pattern. In this way, a circuit different from the first is transferred to the second exposure position. By repeatedly transferring different circuits onto the wafer in this manner, many different circuits are transferred onto one wafer.

In this method, since the exposure area is not restricted by the mask, the exposure width is determined by the width of the mask and the magnification of the imaging optical system regardless of the size of one chip. Scanning exposure is possible.

In both the case of mass production of the same circuit and the case of mass production of different kinds of circuits, after one wafer is exposed, the exposed wafer is transferred to the next processing apparatus by the wafer transfer system, and a new wafer is carried to the wafer stage. .

Generally, in order to manufacture one IC, many layers are exposed by using a large number of circuit originals. However, according to the present embodiment, a large number of layers can be obtained simply by changing the control routine of the illumination optical system each time. Can also be used for the exposure of the layer.

(Second Embodiment) FIG. 6 is a schematic diagram showing the overall configuration of a second embodiment of the exposure apparatus of the present invention.

As shown in FIG. 6, the exposure apparatus of the present embodiment has a light source section 51 capable of irradiating light of a wavelength suitable for exposure with a pulse with an appropriate time width, and an illumination optical system disposed immediately below the light source section 51. 52, a transmissive mask 53 (see FIG. 3B) disposed immediately below the illumination optical system 52 and having a plurality of basic pattern figures, and a wafer 55 as a photosensitive substrate that is moved and held, and the transmissive mask 53 On the other hand, the wafer 55
And a wafer wedge 58 that can be arranged at intervals of. The illumination optical system 52 enables illumination only at the position of a desired basic pattern figure on the transmission type mask, and the illumination enabled position is controlled by the illumination optical system controller 57. Further, such an exposure apparatus has a controller 16 for giving desired operation commands to the light source 51, the wafer stage 58, and the illumination optical system controller 57, respectively.

The operation of the above-described apparatus will be described below. First, a resist-coated wafer 55 is placed on a wafer stage 58 by a wafer transfer system (not shown), and then the transmission type mask 53 is moved by the wafer stage 58. Is moved to a position close to the position, and is positioned at the exposure start position.

The controller 56 controls the wafer stage 5
8 is started. The wafer 55 moves, and the illumination optical system controller 57 is controlled by a command from the controller 56.
Controls the illumination optical system 52 so that only a desired position on the transmission mask corresponding to the current wafer position can be illuminated. Similarly, the light source unit 51 is controlled by a command from the controller 56.
Emits a pulse light, and only the basic pattern figure at the illuminated position on the transmission mask 55 is imaged on the wafer by the imaging optical system 54, and is transferred onto the wafer as a part of the circuit pattern. When the position at which the desired basic pattern is to be transferred coincides with the image forming position of the desired basic pattern on the wafer 55, the illumination optical system controller 57 When the illumination optical system 52 is controlled so that only the position of the desired basic pattern can be illuminated, and the light source unit 51 emits pulsed light, the desired basic pattern is imaged.

When this operation is repeated, when the wafer has passed through the image forming area of the transmission mask, the pattern constituted by the basic pattern is exposed on the wafer, and one exposure is completed.

The light source section 51 may be composed of a light source that performs controlled pulse oscillation, or may be one that has a shutter installed in front of a light source that continuously oscillates and controls oscillation at predetermined time intervals. In the above-described apparatus, the wafer stage 58 is moved at a constant speed. However, the wafer stage 58 may be moved in a step or a movement including acceleration.

The illumination optical system 52 in the exposure apparatus of the above embodiment is the same as that described in the first embodiment with reference to FIG. The procedure for exposing by the exposure apparatus of the present embodiment using the transmission mask shown in FIG. 3 as the transmission mask 53 will be described with reference to FIGS. 4 and 5 in the first embodiment. Same as described.

In this embodiment, light is used, but if a photosensitive resist material can be exposed, electromagnetic waves such as X-rays and electron beams can be used.

(Third Embodiment) The exposure apparatus of this embodiment uses a continuous emission light source instead of the pulse oscillation light source section described in the first and second embodiments, and uses a pulse of an illumination optical system. Exposure is performed by control. In such an apparatus, when the image formation position of the desired basic pattern on the transmission mask coincides with the position on the wafer where the desired basic pattern is to be transferred, only the desired basic pattern is moved for a certain time width. By controlling the illumination optical system so that the irradiation can be performed in a pulsed manner, exposure of the basic pattern figure becomes possible. When the image forming position of the desired basic pattern on the transmission mask does not coincide with the position on the wafer where the desired basic pattern is to be transferred, the entire shutter of the illumination optical system is kept in a light-shielding state. .

When the exposure is performed while the wafer is moving at a constant speed or a constant acceleration, the pulse time of the control of the illumination optical system is determined by the fineness of the exposure pattern, and is determined by the time width that can be regarded as substantially stationary in time. Width. When the exposure is performed by the step movement, the pulse width is set to a time width shorter than the wafer rest time between the steps.

The procedure for exposing with the exposure apparatus of this embodiment is the same as that described in the first embodiment with reference to FIGS.

(Fourth Embodiment) In the first to third embodiments described above, the exposure apparatus capable of exposing many different circuit patterns with a mask having a plurality of basic patterns has been described. The exposure apparatus described above may be capable of exchanging various types of masks. According to such an exposure apparatus, it is possible to cope with a larger number of different ICs by making the basic patterns interchangeable so as to use different basic patterns depending on the stage of the IC manufacturing process.

(Fifth Embodiment) FIG. 7 is a schematic diagram showing the overall configuration of an exposure apparatus according to a fifth embodiment of the present invention.

As shown in FIG. 7, the exposure apparatus of this embodiment is provided with a light source section 61 capable of irradiating light of a wavelength suitable for exposure at an appropriate time width and a large number of minute light deflection surfaces capable of controlling displacement. In addition, a reflection mask 62 (see FIG. 8) irradiated from the light source unit 61, an imaging optical system 63 for imaging the reflected light of the reflection mask 62, and a mask pattern is transferred through the imaging optical system 63. The wafer stage 69 includes a wafer stage 69 capable of moving and holding a wafer 64 as a photosensitive substrate, and a wafer transfer system 67 for transferring the wafer onto the wafer stage 69. The displacement of the minute light deflection surface (see FIG. 8) of the reflection mask is controlled by the reflection mask control device 66 of the reflection mask 62. The apparatus has a controller 65 for giving desired operation commands to the light source 61, the wafer stage 69, the wafer transfer system 67, and the reflection mask controller 66, respectively.

The operation of the above apparatus will be described below. First, a wafer 64 coated with a resist is placed on a wafer stage 69 by a wafer transfer system (not shown), and then the wafer 64 is imaged by the wafer stage 69. It is moved to the image plane position of the optical system 63 and positioned at the exposure start position.

The wafer stage 6 is controlled by the controller 65.
9 is started. The wafer 64 moves, the light source unit 61 emits pulse light according to a command from the controller 65, and the basic pattern drawing reflected by the minute light deflecting surface in the exposed state of the reflection mask is imaged by the imaging optical system 63, and the circuit It is transferred onto the wafer as part of the pattern.
The uniform movement of the wafer 64 is continued as it is,
When the position at which the basic pattern of the desired minute light deflection surface is desired to be transferred coincides with the image forming position of the desired basic pattern of the minute light deflection surface, the reflection mask control device 66 sets the desired minute light deflection surface to the desired minute light deflection surface. When only the light deflecting surface is controlled to the exposure state and the light source 61 emits pulsed light, the imaging optical system 63
Thereby, the basic pattern of the desired minute light deflection surface is imaged.

When this operation is repeated, when the wafer has passed through the image forming area of the reflection mask, the pattern constituted by the basic pattern is exposed on the wafer, and one exposure is completed.

The light source section 61 may be composed of a light source that performs controlled pulse oscillation, or may be a type that has a shutter installed in front of a light source that continuously oscillates and controls oscillation at predetermined time intervals. In the above-described apparatus, the wafer stage 69 is moved at a constant speed. However, the wafer stage 69 may be moved in a step or a movement including acceleration.

In order to realize the object of the present invention, the image forming optical system 63 may be a refractive optical system, a reflective optical system, or a catadioptric optical system.

Next, the configuration of the above-described reflection mask 62 will be described in detail.

FIG. 8 is a perspective view showing a part of the reflection mask 62 used in the exposure apparatus described above. As shown in this figure, the reflection mask 62 is a substrate on which a plurality of minute light deflecting surfaces 72 each composed of a basic pattern figure for device exposure are arranged in a plurality of rows. A deflection surface 72 is provided in the direction of arrow 73 in the figure.

FIG. 9 is an enlarged perspective view of one minute light deflecting surface 72 of the reflection mask 62. As shown in this figure, the minute light deflection surface 72 is supported by a torsion bar 74 so as to pass through the center. An electrode (not shown) is provided below the minute light deflecting surface 72. When one side of the deflecting surface 72 is electrostatically attracted to the electrode, the deflecting surface 72 is centered on the twist rod 74. It rotates at a small angle as an axis. By controlling the displacement of the deflecting surface 72, the deflecting surface 72 is exposed to light from the light source unit or is not exposed. Such a minute light deflection mechanism is described in detail in, for example, Japanese Patent Application Laid-Open No. 2-8812.

FIGS. 10 and 11 are cross-sectional views for explaining examples of constituent members of the above-mentioned minute light deflecting surface 72. FIG. In these figures, reference numeral 81 denotes a deflecting layer of a minute light deflecting surface. The deflecting layer 81 is connected to the substrate by a torsion bar or a cantilever, and is a portion which is inclined or displaced by the electrostatic force of the electrode. The electrode layer below the deflection layer 81 and the spacer layer for displacement are omitted.

On the minute light deflecting surface shown in FIG.
A reflective layer 82 made of a reflective member that reflects the wavelength used at the time of exposure is formed on 1. As the reflection member, the member itself of the deflection layer 81, a metal, a dielectric multilayer film, or the like is used according to the wavelength. On this reflection layer 82, an absorption layer 83 made of an absorption member that absorbs a wavelength used at the time of exposure is formed.
As the absorption layer 83, a metal, a dielectric multilayer film, or the like is used according to the wavelength. The basic pattern is formed by exposing the lower reflective layer 82 by patterning the absorption layer 83 to form a desired basic pattern by photolithography or the like.
Is formed. A basic pattern figure is formed by the exposed reflection part 84. On the minute light deflecting surface shown in FIG. 11, an absorbing layer 85 is formed on the deflecting layer 81 by an absorbing member that absorbs a wavelength used at the time of exposure. As the absorbing member, the member itself of the deflection layer 81, a metal, a dielectric multilayer film, or the like is used according to the wavelength. On this absorption layer 85, a reflection layer 86 made of a reflection member that reflects a wavelength used at the time of exposure is formed. As the reflection layer 86, a metal, a dielectric multilayer film, or the like is used according to the wavelength.
The basic pattern is formed by patterning the reflective layer 86 by photolithography or the like so as to form a desired basic pattern, thereby exposing the lower absorbing layer 85. A basic pattern figure is constituted by the absorbing portion 87 exposed in this way.

FIG. 12A shows the reflection mask 61 viewed from above, and FIG. 12B shows an example of a pattern to be exposed. In FIG. 12A, a vertical stripe basic pattern is formed in column A. Due to the fabrication of the minute light deflecting surface, there is a gap between the adjacent minute light deflecting surfaces 72a and 72b.
In column B, a vertical stripe basic pattern is also formed,
It is arranged at a position corresponding to the gap in row A. By arranging in this manner, it is possible to control the minute light deflecting surfaces in the rows A and B while shifting the mask and the wafer relatively in the direction orthogonal to the pattern arrangement direction 73 so as to shift to an exposure state. As shown in FIG. 12B, a vertical stripe pattern having no gap is exposed.

In this embodiment, as shown in FIG. 9, a torsion bar type minute light deflecting surface is used. However, if the minute light deflecting surfaces are arranged as described above and a basic pattern is formed on the minute light deflecting surface. As the configuration of the minute light deflection surface, other shapes such as a cantilever type and a film deformation type are also possible.

Next, with reference to FIGS. 13 and 14, the procedure of exposure by the above-described exposure apparatus will be described in detail.

FIG. 13 is a view showing the image plane position of the above-mentioned image forming optical system 63. In this drawing, reference numeral 311 denotes an exposure area and an exposure pattern at the image plane position of the imaging optical system 63 when the entire reflection mask is in an exposure state. Since the same basic pattern is arranged on the reflection mask in the longitudinal direction, the arrow 7
As shown in FIG. 3, the image forming positions of the same basic pattern are arranged in the longitudinal direction of the exposure region. Reference numeral 310 indicates a region of the wafer to be exposed, and reference numeral 312 indicates a region after exposure, which is a circuit. Dotted lines 315 and 316 indicate the width of exposure. The wafer moves on the wafer stage so as to pass through the exposure region 311 in the directions indicated by arrows 313 and 314.

FIG. 14 shows how the circuit shown in FIG. 13 is formed by exposure. Exposure is completed in six steps of moving downward in the figure from the left end (a) to the right end (f). A black pattern indicates a pattern that has already been exposed, and a dotted pattern indicates a pattern that has been exposed in that step. An alternate long and short dash line indicates a region where the basic pattern is exposed.

First, when the wafer advances to the position (a) in the figure, there is a position on the wafer where the vertical stripe basic pattern is to be transferred. The reflection mask is controlled so that only the minute light deflecting surface is in the exposure state and the other minute light deflecting surfaces are not in the exposure state, and the light source unit emits pulse light. As a result, part of the pattern 315, 316, 31
7 is exposed on the wafer.

Further, when the wafer advances to the position (b) in the figure, the position where the vertical stripe basic pattern is to be transferred, that is, (a)
The position of the gap, which could not be exposed at the position, coincides with the image forming position of the vertical stripe basic pattern on the minute light deflection surface in the second row, so that the minute light deflection surface on which the vertical stripe basic pattern is formed is exposed. The reflection mask is controlled as described above, and portions 318 and 319 of the pattern are exposed by pulse light emission of the light source unit.

Next, when the wafer advances to the position (c) in the figure, since there is no portion where the basic pattern is to be transferred at the image forming position of the basic pattern, all the minute light deflection surfaces are in the non-exposure state. The reflection mask is controlled as described above.

The wafer further advances, and at the position (d) in the figure, the position where the vertical stripe basic pattern and the horizontal stripe basic pattern are to be transferred coincides with the image forming position of each basic pattern, so that each basic pattern is formed. The reflection mask is controlled so that the minute light deflecting surface is exposed,
Part of the pattern 320, 32 by pulse light emission of the light source unit
1 is exposed.

As described above, when the wafer is sequentially advanced, the wafer passes through the exposure regions of all the basic patterns.
When passing through the exposure area 311 shown in FIG.
The exposure of the circuit is completed as shown in FIG.

When the exposure apparatus of this embodiment is used for mass production of the same circuit, after exposing one circuit, the wafer is moved to the next exposure position by the wafer stage, and after positioning, the same circuit is controlled by the same reflection mask control. Is transferred.

If the same circuit is not mass-produced and, for example, a large number of different circuits are to be manufactured, the controller moves the wafer to the next exposure position by the wafer stage and positions it. The reflection mask is controlled in accordance with the circuit pattern of (1). In this way, a circuit different from the first is transferred to the second exposure position. By repeatedly transferring different circuits onto the wafer in this manner, many different circuits are transferred onto one wafer.

In this method, since the exposure area is not limited by the mask, the exposure width is determined by the width of the mask and the magnification of the image forming optical system regardless of the size of one chip, and is one direction as long as the wafer continues. Scanning exposure is possible.

In both the case of mass production of the same circuit and the case of production of various kinds of circuits, after exposing one wafer, the exposed wafer is transferred to the next process device by the wafer transfer system, and a new wafer is carried to the wafer stage. .

Generally, in order to manufacture one IC, many layers are exposed by using a large number of circuit originals. However, according to this embodiment, a large number of layers are exposed only by changing the control routine of the reflection mask each time. It can also handle exposure of layers.

(Sixth Embodiment) Next, another embodiment of the mask of each example described above will be described. In FIG. 15, reference numeral 151 denotes a micromirror device for forming a basic pattern, reference numeral 152 denotes a peripheral portion such as a wiring, reference numeral 153 denotes a device width, reference numeral 154 denotes a gap between devices, and reference numeral 1 denotes a device.
Reference numeral 55 denotes the entire exposure width, reference numeral 156 denotes the same pattern arrangement direction, and reference numeral 157 denotes an exposure scanning direction. This embodiment is characterized in that a mirror device as a reflection mask is used and the exposure area is further increased. The microdeformable mirror device has a size of about 10 mm square, and the device width 153 is about 10 mm. The exposure area obtained by reducing and forming the image becomes smaller, but in the present embodiment, a plurality of minute deformation devices are arranged and the exposure area is enlarged. Since an actual micro-deformation mirror device is surrounded by wiring and the like for controlling a large number of micro-mirrors, even if a plurality of devices are arranged, a device interval 154 can be formed. In the present embodiment, a plurality of the same micro-deformation mirror devices as those of the fifth embodiment are arranged in the same pattern arrangement direction, and two or more rows are arranged in the exposure scanning direction. The mirror devices are arranged while being shifted in the arrangement direction. When the device interval 154 is wider than the device width 153, three or more columns are arranged, and the columns are sequentially shifted by the device width for each column so that the device occupies the entire range of the exposure width 155.

The exposure procedure is almost the same as in the above-described embodiment. At the image plane position, the wafer is scanned in the direction of exposure scanning, and when a desired position on the wafer reaches an exposure position of a desired basic pattern, a desired micromirror of a desired device is controlled to an exposure state. Since a plurality of micro-deformation mirror devices occupy the entire exposure width, the same basic pattern is arranged in the entire exposure width, and exists in any of the rows of devices. However, when exposing the same basic pattern, the row of devices differs depending on the position in the exposure width direction.

As another modified example, a continuous light source may be used to perform exposure by pulse control of a micro mirror. In this case, when the imaging position of the basic pattern to be exposed on the wafer and the desired basic pattern of the micro-deformable mirror coincide with each other, the desired micro-mirror is turned on in a pulsed manner only for a certain time width. Exposure of the basic pattern figure becomes possible. Except for the micromirror in the exposure state, the off state is always maintained.

When the exposure is performed while the wafer is moving at a constant speed or a constant acceleration, the pulse time of the micromirror control is determined by the fineness of the exposure pattern and the time width that can be regarded as being substantially stationary in time. And When the exposure is performed by the step movement, the step is performed, and a time width shorter than the time during which the exposure is stationary is set as a pulse width.

(Seventh Embodiment) Next, a method for manufacturing a device using the mask and the exposure apparatus described in the first to sixth embodiments will be described.

FIG. 16 shows a micro device (a semiconductor chip such as an IC or an LSI, a liquid crystal panel, a CCD, a thin film magnetic head,
15 is a flowchart illustrating a manufacturing process of a micromachine or the like). In this figure, in step S71 (circuit design), a circuit of a semiconductor device is designed. Step S72
In (mask production), a mask having a plurality of basic pattern figures as described above is produced. This mask is a transmissive mask or a reflective mask, and has the features described above. On the other hand, in step S73 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step S7
4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. Next step S75
The (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step S74, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). In step S76 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step S75 are performed. Through these steps, a semiconductor device is completed and shipped (step S77).

FIG. 17 is a flowchart showing detailed steps of the wafer process. Step S81 (oxidation)
Then, the surface of the wafer is oxidized. Step S82 (CV
In D), an insulating film is formed on the wafer surface. Step S8
In 3 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step S84 (ion implantation), ions are implanted into the wafer. In step S85 (resist processing), a photosensitive agent is applied to the wafer. In step S86 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the mask and the exposure apparatus described above. In step S87 (developing), the exposed wafer is developed. Step S88
In (etching), portions other than the developed resist image are scraped off. In step S89 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using such a manufacturing method, it is possible to manufacture a semiconductor device of a highly integrated circuit which was conventionally difficult to manufacture.

[0099]

According to the present invention described above, a mask on which basic pattern figures are arranged is used, a photosensitive substrate facing the mask is moved, and a position on the photosensitive substrate at which a desired basic pattern figure is to be transferred is determined by the desired position. When the exposure apparatus is configured to control such that only the position on the mask where the desired basic pattern graphic is arranged can be illuminated or exposed when the exposure position of the basic pattern graphic matches, A large number of different circuit patterns can be transferred without the need for a mask. That is, the design can be easily changed, and a large variety and small quantity can be produced. In addition, the same basic pattern is arranged in one direction on the mask, and the wafer is exposed while moving in a plane perpendicular to the pattern arrangement direction, so that the exposure area can be increased.

In the reflection mask and the exposure apparatus using the same according to the present invention, since one basic pattern is formed on one micro-light changing surface, the amount of information contained on one micro-light deflection surface is large. In other words, the in-plane information integration rate increases. The use of block exposure also increases the throughput. Further, by arranging the minute light deflecting surfaces in the second row at the positions of the gaps in the first direction on the minute light deflecting surfaces arranged in the first direction, a continuous pattern can be exposed.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an overall configuration of a first embodiment of an exposure apparatus of the present invention.

FIG. 2 is a diagram showing an illumination optical system used in a first embodiment of the exposure apparatus of the present invention.

FIG. 3 is a schematic view of a mask used in a first embodiment of the exposure apparatus of the present invention.

FIG. 4 is a diagram showing an image plane position of an image forming optical system in a first embodiment of the exposure apparatus of the present invention.

FIG. 5 is a diagram showing how the circuits shown in FIGS. 3C and 4 are configured by the exposure apparatus according to the first embodiment of the present invention.

FIG. 6 is a schematic diagram showing an overall configuration of a second embodiment of the exposure apparatus of the present invention.

FIG. 7 is a schematic diagram showing an overall configuration of a fifth embodiment of the exposure apparatus of the present invention.

FIG. 8 is a perspective view showing a part of a reflection mask used in a fifth embodiment of the exposure apparatus of the present invention.

FIG. 9 is an enlarged perspective view of one minute light deflecting surface of the reflection mask shown in FIG. 8;

FIG. 10 is a cross-sectional view illustrating an example of a component on the minute light deflection surface shown in FIG. 9;

FIG. 11 is a cross-sectional view for explaining an example of a component on the minute light deflection surface shown in FIG. 9;

12 is a diagram illustrating the reflection mask illustrated in FIG. 8 as viewed from above, and a diagram illustrating an example of a pattern exposed by the reflection mask.

FIG. 13 is a diagram illustrating an image plane position of an imaging optical system in a fifth embodiment of the exposure apparatus of the present invention.

FIG. 14 is a diagram showing how the circuit shown in FIG. 13 is configured by a fifth embodiment of the exposure apparatus of the present invention.

FIG. 15 is a view showing a structure of a reflection mask according to a sixth embodiment of the exposure apparatus of the present invention.

FIG. 16 is a flowchart showing an example of a micro device manufacturing process using the exposure apparatus of the present invention.

FIG. 17 is a flowchart showing an example of detailed steps of a wafer process using the exposure apparatus of the present invention.

FIG. 18 is a schematic view showing a conventional exposure apparatus and a manufacturing method using the same.

FIG. 19 is a view showing a wafer exposed using a conventional exposure apparatus and a mask.

[Explanation of symbols]

11, 51, 61 Light source unit 12, 52 Illumination optical system 13, 53 Transmissive mask 14, 63 Imaging optical system 15, 55, 64 Wafer 16, 56, 65 Controller 17, 57 Illumination optical system controller 18, 58, 69 Wafer stage 19, 59, 157 Exposure scanning direction 22 Homogenizer 23, 25, 26 Relay lens 24 Transmission shutter 31-36 Basic pattern graphic 41, 311 Exposure area 42, 310 Area to be exposed 43, 312 After exposure is completed Areas 44, 45, 313, 314 Wafer transfer directions 46, 73, 156 Same pattern arrangement directions 47, 48, 49, 410, 411, 412 Basic pattern figures 315 to 321, 413 to 416 Basic pattern during exposure 62 Reflection mask 66 Reflection mask control device 67 Wafer transfer system 72, 72a, 72b Microscopic light deflecting surface 74 Torsion rod 81 Deflection layer 82, 86 Reflection layer 83, 85 Absorption layer 84 Exposed reflection part 87 Exposed absorption part 315, 316 Line showing the width of exposure 151 Micromirror device part 152 Peripheral parts such as wiring 153 Device width 154 Device gap 155 Exposure width

Claims (20)

[Claims] 1. An illumination optical system, an imaging optical system arranged opposite to the illumination optical system, a transmission mask arranged at an object position of the imaging optical system and depicting a plurality of basic pattern figures,
A stage that holds a photosensitive substrate at an image plane position of the imaging optical system and moves in a first direction perpendicular to the optical axis of the imaging optical system; An exposure apparatus configured to enable illumination of a position of a desired basic pattern figure on a mold mask. 2. An illumination optical system, an imaging optical system arranged opposite to the illumination optical system, a transmission mask arranged at an object position of the imaging optical system and having a plurality of basic pattern figures drawn thereon,
A stage which fixedly holds a photosensitive substrate at an image plane position of the image forming optical system and moves in a first direction perpendicular to an optical axis of the image forming optical system; When the photosensitive substrate at the image plane position of the system is moved in the first direction, the position on the photosensitive substrate where the desired basic pattern graphic is to be transferred coincides with the imaging position of the desired basic pattern graphic. An exposure apparatus configured to enable the illumination optical system to illuminate only the position of the desired basic pattern graphic. 3. The transmission type mask has a plurality of the same basic pattern figures, and the same basic pattern figures are formed on the first plane on the image plane when the transmission type mask is imaged by the imaging optical system. 3. The exposure apparatus according to claim 1, wherein the exposure apparatus is arranged on the transmission mask so as to be arranged in a second direction orthogonal to the direction. 4. An illuminating optical system, a transmissive mask disposed opposite to the illuminating optical system and having a plurality of basic pattern figures drawn thereon, and a photosensitive substrate fixedly held and opposed close to the transmissive mask. A stage moving in a first direction parallel to the substrate surface of the exposure mask, wherein the illumination optical system is configured to illuminate a position of a desired basic pattern figure on the transmission mask. . 5. An illumination optical system, a transmissive mask disposed opposite to the illumination optical system and having a plurality of basic pattern figures drawn thereon, and a photosensitive substrate fixedly held and opposed to the transmissive mask in close proximity to the transmissive mask. Moving the photosensitive substrate in the first direction by the stage, and transferring a desired basic pattern graphic on the photosensitive substrate. An exposure apparatus configured such that, when a position coincides with an imaging position of the desired basic pattern graphic, the illumination optical system can illuminate only the position of the desired basic pattern graphic. 6. The transmission type mask has a plurality of the same basic pattern figures, and the same basic pattern figures are the first basic pattern figures.
6. The exposure apparatus according to claim 4, wherein the exposure apparatus is arranged on the transmissive mask so as to be arranged in a second direction orthogonal to the direction of. 7. The exposure apparatus according to claim 1, wherein the light source emits pulsed light. 8. The light source emits light continuously, and the illumination optical system is controlled in a pulse-like manner to enable illumination of a position of a desired basic pattern graphic on the transmission mask. The exposure apparatus according to claim 1, wherein: 9. The exposure apparatus according to claim 1, wherein the transmission type mask is exchangeable. 10. A reflection mask in which minute light deflecting surfaces capable of controlling displacement are arranged in an array, and a basic pattern figure for device exposure is formed on the deflecting surface. 11. The reflection mask according to claim 10, wherein the minute light deflecting surface is formed of a light reflector, and the basic pattern figure is formed of a light absorber. 12. The reflection mask according to claim 10, wherein the minute light deflection surface is formed by a light absorber, and the basic pattern figure is formed by a light reflector. 13. The reflection mask has two or more minute light deflecting surfaces having the same basic pattern figure, and the minute light deflecting surface having the same basic pattern figure in the first direction on the reflection mask. The reflection mask according to claim 10, wherein the reflection masks are arranged in a line. 14. The second array of minute light deflecting surfaces is arranged so as to correspond to the position of the gap between the minute light deflecting surfaces in the array of the first minute light deflecting surfaces arranged in the first direction. The reflection mask according to claim 10, wherein the reflection mask is formed. 15. The light source unit, the reflection mask according to claim 10, which is illuminated by the light source unit, an imaging optical system disposed to face the reflection mask, and the image formation. A stage that fixedly holds the photosensitive substrate at an image plane position of the optical system and moves in a second direction perpendicular to the optical axis of the imaging optical system and orthogonal to the first direction; An exposure apparatus, wherein the reflection mask is configured such that only a desired minute light deflection surface on the mask is exposed. 16. A light source unit, the reflection mask according to claim 10, which is illuminated by the light source unit, an imaging optical system disposed to face the reflection mask, and the image formation. A stage that fixedly holds the photosensitive substrate at an image plane position of the optical system and moves in a second direction perpendicular to the optical axis of the imaging optical system and orthogonal to the first direction; The stage moves the photosensitive substrate at the image plane position of the imaging optical system in the second direction, and the position on the photosensitive substrate where the desired basic pattern graphic is to be transferred is formed by the desired basic pattern graphic. An exposure apparatus configured such that when the image coincides with an image position, the reflection mask exposes only the minute light deflection surface on which the desired basic pattern figure is formed. 17. The exposure apparatus according to claim 15, wherein the light source emits pulsed light. 18. The light source emits light continuously,
17. The exposure apparatus according to claim 15, wherein the minute light deflecting surface of the reflection mask is controlled in a pulsed manner. 19. The exposure apparatus according to claim 15, wherein the reflection mask is replaceable. 20. Claims 1 to 10, 15 to 1
A device manufacturing method, wherein the device is manufactured using the exposure apparatus according to any one of claims 9 to 10.