JPH10321513A - Electron beam transfer device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron beam reduction transfer device, which can execute various kinds of correction for providing a high-accuracy pattern at quick response speed, without generating aberrations. SOLUTION: This device is provided with an optical illumination system for illuminating a patterned reticle with electron beams and an optical projection system for reducing and transferring the patterned electron beams passing through the reticle onto the surface of a sample to be exposed. Moreover, the device is equipped with a rectile stage 11 for moving the reticle inside a vertical optical axis plane and a wafer stage 15 for moving the sample inside the vertical optical axis plane. The optical projection system is provided at least with a 1st electrostatic deflector 34, having parallel planar electrodes extended in parallel in the lengthwise direction of the pattern in the main field of view and a 2nd electrostatic deflector 35 having at least parallel planar electrodes extended perpendicular to the lengthwise direction in the main field of view.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transfer apparatus for transferring a reticle (mask) pattern onto a sample (eg, a wafer) using an electron beam. In particular, the present invention relates to an electron beam transfer apparatus capable of forming a high-density and fine pattern of 4G DRAM or later with high throughput.

[0002]

2. Description of the Related Art An electron beam exposure apparatus has a drawback that it has high accuracy but low throughput, and various techniques have been developed to solve the drawback. At present, a technique called character projection has been put to practical use. In the character projection exposure, a repetitive circuit small pattern (about 10 μm square on a wafer) is transferred onto a wafer using a mask in which a plurality of similar small patterns are formed. However, even with this character projection, the throughput is about one digit lower for application to wafer exposure in actual production of a full-scale semiconductor integrated circuit device (DRAM or the like).

On the other hand, as one type of electron beam exposure apparatus for printing an integrated circuit pattern on a semiconductor wafer, an electron beam is irradiated on a mask having a circuit pattern of one semiconductor chip as a whole, and an image of the pattern in the irradiation area is formed in two steps. An electron beam reduction transfer apparatus for performing reduction transfer by a projection lens is known (for example, see JP-A-5-160012). In this type of apparatus, if the entire area of the mask is irradiated with an electron beam at once, the pattern cannot be transferred with high accuracy.
The field of view of the optical system is divided into a number of small areas (main field and subfield), and a pattern image is transferred while changing the conditions of the electron optical system for each subfield (division transfer method, for example, US Pat.
260151). It is also known that in a split transfer type electron beam exposure apparatus, off-axis aberrations can be reduced by using an axially moving electromagnetic lens such as MOL or VAL (MOL (Moving Objective Lens, H. Ohm).
Iwa et al., Electron Commun. Jpn, 54-B, 44 (1971)), V
AL (Variable Axis Lens, HC Pfeiffer et al., Appl.
Phys. Lett. Vol. 39, No. 9.1 Nov. 1981)). But,
Such a full-scale electron beam reduction transfer apparatus is currently under development.

In this type of electron beam transfer device, a deflector for deflecting an electron beam is used. Electron beam deflectors include an electrostatic deflector and an electromagnetic deflector. The electrostatic deflector forms an electric field in a space through which an electron beam passes, and bends the electron beam in a positive potential direction. The electromagnetic deflector forms a magnetic field in a space through which an electron beam passes, and bends the electron beam in a direction based on Fleming's left-hand rule. As one type of the electrostatic deflector, an octapole type electrostatic deflector having a shape symmetrical with respect to the optical axis by eight times is also known.

In the above-described divided transfer method, a non-pattern area is provided between each sub-view in order to increase the permissible value of the position fluctuation of the sub-view illumination and to increase the strength of the reticle. Then, on the wafer, in order to cancel this non-pattern area (overlap with the adjacent pattern), the reticle transmission electron beam is projected onto the wafer with the width shifted by the width of the non-pattern area. Is to be continuous. Such an operation is called non-pattern area correction.

[0006]

However, what kind of deflector is used as a deflector performing such a function is not clear in the known literature. Also, in the case of an electrostatic deflector such as an octapole type, when the height of the parallel plate electrode in the optical axis direction is smaller than the electrode interval, the deflection sensitivity differs depending on the region, and a large deflection aberration occurs. was there. On the other hand, when the above-described non-pattern area correction is performed by using the electromagnetic deflector, there is a problem that the response period of the electromagnetic deflector is slow, and the shot period of the sub-field of view becomes long as 100 to 500 μsec.

Further, when the distance between the electrodes is shortened by an electrostatic deflector such as an octapole, the distance between the electrodes and the beam becomes shorter,
There is also a problem that beam instability is likely to occur due to electrode contamination (reactant of the resist gas) or a problem that the conductance for exhausting gas generated from the electrode surface to the outside is reduced.

The present invention has been made in view of such a conventional problem, and an electron beam capable of executing various corrections for obtaining a high-accuracy pattern at a high response speed without generating aberration. An object of the present invention is to provide a reduction transfer device.

[0009]

In order to solve the above-mentioned problems, an electron beam transfer apparatus according to the present invention comprises: an illumination optical system for illuminating a reticle on which a pattern is formed with an electron beam; A projection optical system for reducing and transferring the electron beam onto the surface to be exposed of the sample, a reticle stage for moving the reticle in a plane perpendicular to the optical axis (in the XY plane), and a reticle stage for moving the sample in the plane perpendicular to the optical axis (X-axis). A wafer stage moved in the Y plane), wherein the pattern on the reticle is divided into a plurality of band-shaped main fields, and each main field is divided into a plurality of sub-fields in the longitudinal direction. When the illumination optical system is divided on the reticle, the illumination optical system is configured to illuminate a specific sub-field by deflecting the illumination light to the sub-field upstream of the reticle. The projection optics A first system having at least a parallel plate electrode extending parallel to a longitudinal direction of the main field of view;
Or a second multi-electrode electrostatic deflector having at least parallel plate electrodes extending at right angles to the longitudinal direction of the main field of view.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An electron beam transfer apparatus according to a first aspect of the present invention includes an illumination optical system for illuminating a reticle on which a pattern is formed with an electron beam, and a sample for passing an electron beam patterned through a reticle. , A reticle stage for moving the reticle in the plane perpendicular to the optical axis (in the XY plane), and a sample in the plane perpendicular to the optical axis (in the XY plane). A pattern on the reticle is divided into a plurality of band-shaped main fields of view, and each main field of view is divided into a plurality of sub-fields of view in the longitudinal direction. When arranged on a reticle, the illumination optical system is configured to illuminate a specific sub-field of view by deflecting illumination light to the sub-field upstream of the reticle, and the projection optical system Is patterned The electron beam is deflected and imaged toward a predetermined position on the surface to be exposed, and on the surface to be exposed, the main field of view pattern is formed by connecting and arranging the respective sub-fields, The reticle stage and the wafer stage move synchronously, and are configured to form an entire pattern by connecting and arranging the respective main fields of view on the surface to be exposed. A first multi-electrode electrostatic deflector having at least a parallel plate electrode extending parallel to the longitudinal direction, or a second multi-electrode electrostatic deflector having at least a parallel plate electrode extending perpendicular to the longitudinal direction of the main field of view. It is characterized by having.

The electron beam transfer apparatus of this aspect is designed so that the images of all the sub-fields within the band-shaped main field of view are projected onto the sample with small aberrations using the lens and the deflector of the projection optical system. . In order to advance the main visual field to the next main visual field, the transfer is performed while the mask stage and the wafer stage are continuously moved in the lateral direction of the main visual field.

Here, a boundary region having no pattern is provided between each main field of view and between each sub-field of view for the purpose of strengthening the mask and for increasing the permissible value of the positional fluctuation of the illumination of the sub-field of view. ing. The electrostatic deflector is used for the following three types of deflection correction. (1) When performing the transfer, a width adjustment for canceling the boundary area on the sample is performed. (2) Correction is made when the cycle of the movement of the sample and the movement of the mask image are out of order. (3) Align with the pattern of the previous layer already formed on the sample. Although the minimum operation can be performed by configuring the projection optical system only with a combination of a lens and an electromagnetic deflector, it is convenient if there is a deflector other than the electromagnetic deflector, and if it is an electrostatic deflector, It is more convenient to respond quickly.

The role of the electrostatic deflector of the present invention will be described. First, the deflector for eliminating the boundary region between the main visual fields, that is, the lateral direction of the main visual field, may be performed by the first deflector because the moving direction is the lateral direction of the main visual field. Since the removal of the boundary region between the sub-fields in the main field usually requires a large deflection, it may be performed by an electromagnetic deflector provided between the mask and the lens system. The correction amount for alignment and stage synchronization errors is as small as a few μm, so a second electrostatic deflector may be used in the longitudinal direction of the main field of view, and correction in a direction perpendicular to this is performed by the first static deflector. An electric deflector may be used.

Hereinafter, description will be made with reference to the drawings. FIG.
FIG. 3 is a plan view showing a visual field division of a chip pattern of a semiconductor device to be transferred by a transfer device according to one embodiment of the present invention.
The vertical direction in FIG. 3 is the Y direction, and the horizontal direction is the X direction. In this case, the entire size of the chip pattern 61 including the non-pattern area is 120 mm wide × 173 mm long. here,
The chip pattern 61 is divided into a number of main visual fields 63. One main visual field 63 is 1.2 mm in height × 24 mm in width. In the main field of view 63, two 1 mm square sub-fields of view 64 are provided.
0 are arranged. 0.1 mm around each sub-field of view 64
A non-pattern area 65 having a width (total width of 0.2 mm) is provided in a frame shape. In the Y direction, 144 steps of main visual fields are arranged, and this is called a belt 62. Five belts 62 are arranged in the X direction. That is, 144 sub-fields of view 64 are present in the chip pattern 61 in the Y direction and 10 in the X direction.
0 are arranged. On the other hand, the size of one chip on the wafer is 25 mm in the X direction when the reduction ratio is 1/4.
It is 36 mm in the Y direction.

When transferring the chip pattern 61 shown in FIG. 3, while deflecting both the illumination electron beam and the transmission electron beam in the X direction in each main field 63, the illumination light is transmitted to a certain sub field 64.
The pattern light transmitted through the sub-field of view is deflected to a position on the wafer where the sub-field of view is to be projected, and is guided and imaged. That is, the change (scan) of the sub-field of view is performed by the deflector. The deflector that performs such a deflection is usually an electromagnetic deflector. On the other hand, the change (scanning) of the main visual field is performed by continuously moving the reticle (reticle stage) and the wafer (wafer stage) in the Y direction in synchronization. Since the image is inverted by the projection optical system, the moving direction of the stage is reversed. Therefore, while projecting one main field 63, each subfield on the reticle moves in the Y direction, and the position of the subfield on the wafer to be projected also moves in the Y direction. The illumination light and the projection light are deflected to follow such movement in the Y direction.
When changing the belt 62, the exposure is temporarily stopped, and the reticle stage and the wafer stage are moved in the X direction.

FIG. 2 is a diagram showing an image forming relationship in the entire optical system of the electron beam reduction transfer device according to one embodiment of the present invention. The electron gun 1 emits an electron beam downward. Below the electron gun 1, two stages of condenser lenses 3, 5 are provided.
Through the blanking aperture 7 to form a crossover. These two condenser lenses 3 and 5 function as a zoom lens, and the current density for irradiating the reticle 10 can be varied.

Above and below the condenser lenses 3, 5, two-stage rectangular openings 2, 6 are provided. The rectangular apertures (sub-field limiting apertures) 2 and 6 pass only the electron beam illumination light for the area corresponding to one sub-field. Specifically, the first
The aperture 2 is shaped into a dimensional square of slightly more than 1 mm square in terms of reticle size. The image of the opening 2 is formed on the second opening 6 by the lenses 3 and 5.

Below the second opening 6, a sub-field selection deflector 8 is arranged at the position where the crossover is formed, in parallel with the blanking opening 7. The sub-field selection deflector sequentially scans the illumination light in the X direction in FIG.
Exposure of all sub-fields within one main field is performed. A condenser lens 9 is arranged below the sub-field selection deflector 8. The condenser lens 9 converts the electron beam into a parallel beam, impinges on the reticle 10, and forms an image of the second aperture 6 on the reticle 10.

In FIG. 2, only one sub-field of view on the optical axis of the reticle 10 is shown.
−Y direction), and has many sub-fields and main fields as described with reference to FIG. When illuminating and exposing each sub-field within one main field, the electron beam is deflected by the sub-field selection deflector 8 as described above. The reticle 10 is
It is mounted on a reticle stage 11 that can move in the Y direction. The wafer 14 as a sample is also placed on a wafer stage 15 that can move in the X and Y directions. These reticle stage 11 and wafer stage 15 are
By scanning in the opposite Y directions, each main visual field in the belt 62 in the chip pattern 61 in FIG. 3 is continuously exposed. Further, the exposure of each belt 62 is performed by intermittently scanning both stages 11 and 15 in the X direction.
Each of the stages 11 and 15 is equipped with an accurate position measuring system using a laser interferometer, and each sub-field and main field of view on the wafer 14 is adjusted by a separate alignment means and adjustment of each deflector. Are joined together exactly.

Below the reticle 10, two-stage projection lenses 12 and 13 (objective lenses) and a deflector (see FIG. 1) are provided. Then, one sub-field of the reticle 10 is irradiated with an electron beam, and the electron beam patterned by the reticle 10 is reduced and deflected by the two-stage projection lenses 12 and 13 and is converged on a predetermined position on the wafer 14. Imaged. An appropriate resist is applied on the wafer 14, and the resist is given a dose of an electron beam to transfer a reduced pattern of a reticle image onto the wafer 14. As described above, the wafer 14 is mounted on the wafer stage 15 that can move in the direction perpendicular to the optical axis.

FIG. 1 is a schematic side sectional view showing details of the projection optical system of the electron beam transfer apparatus of the embodiment shown in FIG. The reticle 10 shown at the top of FIG.
The electron beam illumination is received by the illumination optical system shown in FIG. Below the reticle 10, a lens 12, a lens 13, and a sample 14 are arranged in this order along the optical axis (dashed line at the center).

The lens 12 is formed by winding a coil 12c around an inner circumference of a rotationally symmetric magnetic pole 12b having a U-shaped cross section. The upper magnetic pole 12a and the lower magnetic pole 12d
It protrudes near the optical axis, and a magnetic field line in the optical axis direction is formed between the two. Deflectors 38 and 39 for axial movement are arranged inside the magnetic poles 12 a and 12 d above and below the lens 12. At the same position as the deflector 38, a deflector 42 for deflecting the electron beam is also installed so as to overlap at right angles. The deflector 43 immediately below the deflector 38 is for removing the non-pattern area on the sample.

The crossover 44 is a point at which the reticle and the sample are internally divided at a reduction ratio. The lens 13 is provided immediately above the upper magnetic pole. A crossover (not shown) of an electron gun of an illumination system is imaged on the crossover 44.

The lens 13 has a shape similar to that of the lens 12, which is made smaller and inverted. The polarity of the lens 13 is opposite to that of the lens 12. Inside the upper magnetic pole and the lower magnetic pole of the lens 13, the shaft moving deflectors 40 and 41 are arranged as in the case of the lens 12. The deflector 40 is
A deflector (not shown) for deflecting an electron beam for vertically incident on the sample is also installed so as to overlap at right angles.

In the upper part inside the projection lens 12, two-stage electrostatic deflectors 34 and 35 as a first electrostatic deflector are arranged. These two-stage electrostatic deflectors 34 and 35
The detailed structure will be described later with reference to FIG. Since the absolute values of the deflection amounts of the two deflectors 34 and 35 are equal to each other and the directions of deflection are opposite, the incident direction and the outgoing direction of the two deflectors are parallel. However, these electrostatic deflectors 3
Since the reference numerals 4 and 35 are provided in the magnetic field of the lens 12, the deflection direction is slightly rotated. Therefore, the deflectors 34 and 35 are installed in a state where they are mechanically or electrically rotated by the rotation in the direction of deflection by the lens 12 so that the deflection directions of the deflectors 34 and 35 are opposite to each other.

At the lower portion inside the projection lens 13, two-stage electrostatic deflectors 36 and 37 as a second electrostatic deflector are arranged. The deflectors 36 and 37 are also used for the lens 13.
Are relatively rotated by an amount corresponding to the rotation in the deflection direction by the magnetic field. Further, since the coordinates XY of the main field of view are slightly rotated at the position of the deflector 34 and the position of the deflector 37, the direction of the deflector is the same as the direction of the main field of view at the position shown in FIGS. Installed to fit.

When the electrostatic deflectors 34 and 35 are provided between the reticle 10 and the lens 12 or inside the lens 12 as close to the reticle 10 as possible, the optical axis before the image of the sub-field of view is incident on the lens. Since the lens can be moved closer, aberration of the lens can be reduced. Similarly, the second deflectors 36 and 37 are
If it is provided between the lens 13 and the sample 44 or as close to the sample 44 as possible within the lens 13, the trajectory of the electron deviates from the optical axis due to deflection and the lens 13
This is advantageous because an increase in the aberration of the lens can be suppressed.

FIG. 4 is a diagram showing a detailed structure of the first electrostatic deflector of this embodiment. (A) is a plan view, and (B) is a side sectional view along line BB of (A). The first electrostatic deflector 34 has an insulating ring 78 that is a thin full-circle ring around the optical axis, and left and right parallel flat plates 71 and 72 disposed in the ring. Both parallel plates are
It has a substantially semicircular planar shape, but its central surface 71
Reference numerals a and 72a denote electrostatic electrode surfaces extending in the YZ plane in parallel with each other. At the center of both surfaces 71a and 72a, there is shown a main visual field 77 obtained by projecting the main visual field on the reticle. Both sides 71
a and 72a are parallel to the longitudinal direction (X direction) of the main visual field 77 and extend beyond both ends of the main visual field 77. A voltage V is applied between the two parallel flat plates 71 and 72, and both surfaces 71a and 7
An electric field is formed between 2a. The electron beam passing between the two surfaces 71a and 72a is deflected in a direction toward the positive electrode surface.

Four auxiliary electrodes 7 are provided at the side ends (upper and lower sides of the figure) of the space (opening 70) between the electrode surfaces 71a and 72a.
3, 74, 75 and 76 are arranged. Each auxiliary electrode has the same shape of auxiliary electrode surfaces 73a, 74 facing the opening 70.
a, 75a, and 76a, respectively. These auxiliary electrode surfaces form a substantially cylindrical surface around the optical axis so as to fill the upper and lower surfaces of the opening 70. A voltage is applied to these auxiliary electrodes by a set of auxiliary electrodes 74-75 and auxiliary electrodes 73-76 so that the equipotential surfaces are parallel to the electrodes 71a and 72a. The role of these auxiliary electrodes 73 to 76 is as follows.
Is to correct the disturbance of the potential at both ends of the lens and reduce the deflection aberration over a wide range. When the electrostatic deflector opening 70 is relatively narrow (for example, the distance between both electrode surfaces is 1/5 or less of the surface width), the auxiliary electrode is unnecessary.

The distance between the parallel flat plates of the deflector must be such that the main field of view 47 does not allow a part of the beam to contact the electrodes when the mask is continuously moved. It is sufficient that the distance is twice as long as the width of the main field of view. The upper limit of this interval is determined by the deflection sensitivity, and a sufficient deflection sensitivity can be obtained if it is 10 times or less 1 mm in the lateral direction of the main field of view.
If the length (height) of the deflector in the Z direction is twice or more the distance between the electrodes, the edge effect near the entrance and exit of the electrode can be sufficiently reduced.

FIG. 5 is a diagram showing a detailed structure of the second electrostatic deflector of the present embodiment. (A) is a plan view, and (B) is a side sectional view along line BB of (A). The deflector 36 has electrode surfaces 81a, 82a perpendicular to the longitudinal direction of the main field of view 86 which is a projection image at the mounting Z position of the deflector.
Are provided. These parallel plate electrodes 81 and 82 have a planar shape obtained by cutting one side portion of a circle, and are incorporated at opposing positions (upper and lower in the figure) of the inner surface of the insulating ring 87. The electrode surfaces 81a and 82a of the electrodes 81 and 82 extend slightly outside the upper and lower ends of the main field of view 86 and parallel to each other.

On each side of the space (opening 80) between the two electrode surfaces 81a and 82a, two sets of auxiliary electrodes 83, 84 and 85 are provided, a total of six. These auxiliary electrodes 83, 8
4 and 85 are arranged so as to extend in a belt shape along the inner surface of the insulating ring 87. Each auxiliary electrode 83, 84, 85
Are equal in length and there is a gap between each electrode. The inner surface of each auxiliary electrode forms a concentric cylindrical surface centered on the optical axis. It is sufficient that at least two auxiliary electrodes are provided on one side.

In the deflector 36, the parallel plate 81
When a voltage of + V is applied to the parallel plate 82 and a voltage of -V is applied to the parallel plate 82, the auxiliary electrode 84 has 0V, and the auxiliary electrode 83 has (R ₆ / r ₆ ) s.
A voltage of inθV is applied, and − (R ₆
/ R ₆ ) sin θV voltage is applied. In the deflector shown in FIG. 4, when the voltage applied to the parallel plate 71 is V and the voltage applied to the parallel plate 72 is -V, the auxiliary electrode 7
3 and 75 have (R ₄ / r ₄ ) sin θV and auxiliary electrode 7
− (R ₄ / r ₄ ) sin θV is applied to _4, 76. Here, θ is the angle between the center line of the auxiliary electrode and the electrode surface of the parallel plate.

When the distance between the parallel plate electrode surfaces 81a and 82a is small, the deflection distortion can be reduced in a wide area, and the adverse effect of the edge effect can be reduced. It is preferable that the height of the deflector in the Z direction is sufficiently higher than the electrode interval. However, the deflection amount in this deflector is small for correction and the allowable value of the deflection aberration is large. Therefore, if the height of the deflector in the Z direction is larger than the electrode interval, the deflection aberration due to the edge effect can be sufficiently reduced. .

Next, the overall operation of the electron beam reduction transfer apparatus of this embodiment will be described. The reticle 10 is continuously moved in the Y direction at a speed of 4 V + α (0.8 V), and the sample 15 is continuously moved in the −Y direction at a speed of V to change the main visual field to be transferred. The sub-fields of view arranged in a line in the X direction are selected and illuminated one by one by a deflector and a lens system on the upstream side of the reticle 10, and transfer is performed. The reason why the scanning speed of the reticle is 4V + α with respect to the scanning speed V of the wafer is that the contraction rate is 1/4 and that the non-pattern area exists on the reticle but does not exist on the wafer. Each sub-field is imaged on the sample 15 by the lenses 12 and 13, and the electromagnetic deflectors 38, 39, 4
By using 0 and 41 to move the axis of the lens to the position of the trajectory of the electron beam, low aberration is realized.

Next, the timing of transfer of each sub-field and scanning of the main field will be described. When the stage advances so that the center of the main visual field at the end on the reticle 10 is located at a position of 1.2 mm / 2 from the optical axis, the transfer of the first sub visual field of the main visual field starts. At this time, in order to cancel the non-pattern area in the Y direction by shifting the width thereof, the electrostatic deflectors 34 and 35 are operated, and 100 μm on the reticle and 25 μm on the wafer.
The sub-field image is moved in the Y direction. Since the displacement between the main field of view on the reticle and the center line of the main field of view on the wafer is gradually eliminated, the amount of movement becomes smaller sequentially in the second and third sub-fields, and becomes smaller in the sub-field on the optical axis. In the transfer, the amount of movement in the reverse direction gradually increases from that time, and the amount of movement becomes -100 μm on the reticle and -25 μm on the wafer when transferring the sub-field of the other end of the main field. The deflectors 34, 3
Deflections and registration corrections in the deflection direction due to the fact that 5 does not exactly coincide with the Y direction of the wafer, that is, correction of a deviation in the X direction among deviations between the reticle image and the wafer surface are performed by the deflectors 36 and 37. Since the absolute values of the deflection amounts of the deflectors 36 and 37 are equal and the deflection directions are opposite, the angle of incidence on the sample when deflected is always kept vertical. The deflection amount of the non-pattern area in the longitudinal direction of the main visual field is 300 μm × 19 wafers =
Since it is as large as 5.7 mm and the direction is also the Y direction, the second deflector cannot cope with it.
The electromagnetic deflectors 42 and 43 have the same amount of deflection as the absolute value and the opposite directions, so that the incident direction and the outgoing direction are parallel.

[0037]

As is apparent from the above description, according to the present invention, various corrections for obtaining a high-precision pattern can be performed at a high response speed without causing aberrations. A transfer device can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic side sectional view showing details of a projection optical system of an electron beam reduction transfer apparatus according to one embodiment of the present invention.

FIG. 2 is a diagram showing an image forming relationship in the entire optical system of the electron beam reduction transfer device according to one embodiment of the present invention.

FIG. 3 is a plan view showing field division of a semiconductor device chip pattern transferred by an electron beam reduction transfer device according to one embodiment of the present invention.

FIG. 4 is a diagram showing a detailed structure of a first electrostatic deflector of FIG. 3; (A) is a plan view, and (B) is a side sectional view along line BB of (A).

FIG. 5 is a diagram showing a detailed structure of a second electrostatic deflector of the present embodiment. (A) is a plan view, (B) is a line BB of (A).
FIG.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 electron gun 6, 7 opening 8 deflector 12, 13 projection lens 11 reticle stage 14 wafer 15 wafer stage 34, 35 first electrostatic deflector 36, 37 second electrostatic deflector 61 reticle chip pattern 62 belt 63 Main field of view 64 Secondary field of view 65 Non-pattern area

Claims (10)

[Claims] An illumination optical system for illuminating a reticle on which a pattern is formed with an electron beam, a projection optical system for reducing and transferring an electron beam patterned through a reticle onto a surface to be exposed of a sample, and a reticle. A reticle stage for moving the sample in the plane perpendicular to the optical axis (in the XY plane);
-A wafer stage moved in the -Y plane); the pattern on the reticle is divided into a plurality of band-shaped main fields of view, and each main field of view is divided into a plurality of sub-fields in the longitudinal direction. In a case where the illumination optical system is divided into fields of view and arranged on the reticle, the illumination optical system is configured to illuminate a specific sub-field of view by deflecting illumination light to the sub-field of view upstream of the reticle. A first multi-electrode electrostatic deflector having at least a parallel plate electrode extending parallel to the longitudinal direction of the main field of view in the projection optical system, or a parallel plate electrode extending perpendicular to the longitudinal direction of the main field of view; An electron beam transfer device comprising a second multi-electrode electrostatic deflector having at least: 2. An illumination optical system for illuminating a reticle on which a pattern is formed with an electron beam, a projection optical system for reducing and transferring an electron beam patterned through a reticle onto an exposed surface of a sample, and a reticle. A reticle stage for moving the sample in the plane perpendicular to the optical axis (in the XY plane);
-A wafer stage moved in the -Y plane); the pattern on the reticle is divided into a plurality of band-shaped main fields of view, and each main field of view is divided into a plurality of sub-fields in the longitudinal direction. In a case where the illumination optical system is divided into fields of view and arranged on the reticle, the illumination optical system is configured to illuminate a specific sub-field of view by deflecting illumination light to the sub-field of view upstream of the reticle. The projection optical system deflects and forms the patterned electron beam toward a predetermined position on the surface to be exposed, and connects and arranges the sub-fields on the surface to be exposed to form a main field of view. The reticle stage and the wafer stage are configured to move synchronously, and to form an entire pattern by connecting and connecting respective main visual fields on a surface to be exposed. A first multi-electrode electrostatic deflector having at least a parallel plate electrode extending parallel to the longitudinal direction of the main field of view in the projection optical system, or a parallel plate extending perpendicular to the longitudinal direction of the main field of view. An electron beam transfer device comprising a second multi-electrode electrostatic deflector having at least electrodes. 3. A parallel plate electrode having a relatively large area and at least four auxiliary parts having a relatively small area disposed at an end of the parallel plate electrode, wherein the first or second electrostatic deflector is provided. The electron beam transfer device according to claim 1, further comprising: an electrode. 4. The electron beam transfer device according to claim 1, wherein the first electrostatic deflector is installed near the reticle. 5. The device according to claim 1, wherein the second electrostatic deflector is provided near the wafer.
An electron beam transfer device according to the above. 6. The first electrostatic deflector or the second electrostatic deflector comprises a two-stage deflector for deflecting an electron beam at substantially the same angle but in the opposite direction, and deflects the electron beam in the optical axis direction. The electron beam transfer apparatus according to any one of claims 1 to 5, wherein the electron beam transfer apparatus is configured to translate in a perpendicular direction. 7. The apparatus according to claim 1, wherein an interval between the parallel flat plates of the first electrostatic deflector is 2 to 10 times a width of the main field of view in a short direction. Electron beam transfer equipment. 8. An electromagnetic deflector for deflecting an electron beam passing through the reticle in a longitudinal direction of the main field of view and the first electrostatic deflector, and deflects the electron beam at a relatively slow response speed. 3. The electron beam transfer apparatus according to claim 2, wherein an electromagnetic deflector is used to deflect the light, and a first electrostatic deflector is used to deflect the light at a relatively high frequency. 9. The method according to claim 1, wherein the length of the electrode of the first electrostatic deflector in the optical axis direction is at least twice the distance between the parallel plate electrodes of the deflector. 2. The electron beam transfer device according to claim 1. 10. An interval between parallel plate electrodes of the second electrostatic deflector is set at 1.0 in a longitudinal direction at a sample position in the main field of view.
The electron beam transfer apparatus according to any one of claims 2 to 8, wherein the magnification is 5 to 1.5 times.