JPH10316497A - Production of silicon carbide electrode plate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide electrode plate, highly precisely and easily workable from SiC as a material at a low cost without adopting a mechanical working process such as a cutting process or a grinding process. SOLUTION: This method for producing a silicon carbide electrode plate for a reaction device which is used for the production of a semiconductor device and, to which high frequency is applied comprises depositing the electrode plate on a carbon susceptor formed from silicon carbide (SiC) in a desired shape by a CVD method, or comprises depositing the electrode plate on the carbon susceptor formed from the silicon carbide in the desired shape by the CVD method, separating the silicon carbide from the carbon susceptor and subsequently oxidizing the molded silicon carbide to remove unnecessary carbon.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to an etching apparatus,
The present invention relates to a method for manufacturing an electrode plate used for an ashing device, a sputtering device, and the like, in particular, a silicon carbide electrode plate.

[0002]

2. Description of the Related Art Conventionally, single-crystal silicon, aluminum, carbon, silicon carbide, and the like have been used as a material of an electrode plate used in an etching device, an ashing device, a sputtering device, and the like in a semiconductor process. Of these, silicon carbide (SiC) was difficult to produce mainly because of its difficult workability and high cost.

Heretofore, when manufacturing an electrode plate using SiC as a material, a block was prepared from SiC fine powder by a sintering method or the like, and this was processed into a desired shape and thickness by cutting and grinding. Since SiC is a hard and brittle material, it is easily chipped or cracked, is difficult to process, and is expensive.

[0004]

SUMMARY OF THE INVENTION The present invention has been made in order to solve such a problem. In a method of manufacturing an electrode plate used for manufacturing a semiconductor device using SiC as a material, cutting and grinding are performed. An object of the present invention is to develop a method for manufacturing a silicon carbide electrode plate that is easy to perform with high precision and is low in cost, without depending on a mechanical processing method such as processing.

[0005]

SUMMARY OF THE INVENTION In order to solve such a problem, an invention according to claim 1 of the present invention is directed to a method of manufacturing an electrode plate for a reaction apparatus for applying a high frequency used for manufacturing a semiconductor device. 3. The method of manufacturing a silicon carbide electrode plate according to claim 1, wherein said electrode plate is produced by depositing silicon carbide (SiC) on a carbon susceptor having a desired shape by a CVD method.

According to such a manufacturing method, SiC is deposited along the shape of the mold of the carbon susceptor placed at a position facing the flow of the reaction gas, so that after the reaction is completed, the carbon susceptor as the mold is removed. A high-precision molded product having a desired shape can be obtained easily and at low cost.

According to a second aspect of the present invention, there is provided a method for manufacturing an electrode plate for a reaction apparatus for applying a high frequency used in the manufacture of a semiconductor device.
The method is characterized by depositing silicon carbide on a carbon susceptor having a desired shape by the method D, separating the carbon susceptor and silicon carbide, and oxidizing the formed silicon carbide to remove unnecessary carbon. The method for manufacturing a silicon carbide electrode plate described above.

According to this manufacturing method, since the formed silicon carbide is oxidized and burned, there is no chemical alteration in SiC itself, but for example, carbon slightly remaining on the contact surface with the carbon susceptor, Unnecessary carbon remaining as a part of the mold is easily oxidized and burned at low temperature and removed as CO gas, etc. Obtainable.

Here, if the carbon susceptor has a structure in which a plurality of carbon pins are erected at predetermined intervals on a carbon base plate (Claim 3), C
During the VD reaction, SiC is deposited on the carbon base plate in the space between the pins and on the carbon base plate, and a molded product serving as a prototype of an electrode plate having a desired small-diameter hole is obtained.

The invention according to claim 4 of the present invention has a structure in which the carbon pins of the carbon susceptor can be removed from the carbon base plate, and after the SiC deposition reaction is completed, the carbon base plate is removed and only the carbon pins are oxidized. A method for producing a silicon carbide electrode plate, characterized by forming a small diameter hole for reaction gas rectification and an electrode plate mounting hole corresponding to the outer shape of the pin in the electrode plate by incineration.

If the structure of the carbon susceptor is kept in this way, after the SiC deposition reaction is completed, for example, the nut is loosened and the carbon base plate is removed, and then the carbon susceptor is oxidized and completely burned with the carbon pin attached. The pin disappears, and a number of small holes for rectifying the reaction gas having a hole diameter equal to the outer diameter of the carbon pin are formed. Further, an electrode plate mounting hole is formed on the outer periphery of the electrode plate. The small-diameter hole formed here has high accuracy so that finishing is not required. In addition, the contact surface of the SiC plate with the carbon base plate after the carbon base plate is removed may be slightly contaminated with carbon. Since the new surface is formed, when used as an electrode plate, no impurities are contaminated on a processing object such as a semiconductor wafer.

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings, but the present invention is not limited thereto. Here, FIG. 1 is an explanatory view showing an example of a carbon susceptor used in the method for manufacturing an electrode plate of the present invention, and FIG. 2 is an explanatory view showing a state where SiC is deposited on the carbon susceptor by a CVD method. FIG. 3 is an explanatory view showing a state in which only the carbon base plate of the carbon susceptor has been removed after the completion of SiC molding. FIG. 4 is a plan view showing an example of the manufactured electrode plate. FIG. 5 is an example of an apparatus to which the electrode plate manufactured according to the present invention is applied, and is a schematic view of a dry etching apparatus for applying a high frequency.

The present inventors have found that, in a method of manufacturing an electrode plate particularly using SiC as a material, a high-precision and low-cost forming method avoids mechanical processing such as cutting and grinding for drilling and surface finishing. As a result of various studies on the method, the carbon susceptor was used as a mold,
After depositing iC, the present inventors have completed the present invention by removing the carbon susceptor and oxidizing and burning unnecessary carbon members.

Here, an example of an electrode plate manufactured by the manufacturing method of the present invention will be described with reference to FIG.
The material No. 0 is SiC, and several hundred to several thousand small-diameter holes 6 for various gas distributions are formed. Further, an electrode plate mounting hole 5 is formed in an outer peripheral portion of the electrode plate. The size of the electrode plate is usually 20 mm in diameter corresponding to the size of the workpiece.
Those having a diameter of 0 to 400 mm and a thickness of several mm to several tens mm are used, and the small diameter hole has a diameter of several tens μm to several hundred μm.

FIG. 5 shows a dry etching apparatus for applying a high frequency as an example of an apparatus to which this electrode plate is applied. Here, a state in which the electrode plate 31 is set in the dry etching apparatus 30 for applying a high frequency is shown, and a semiconductor wafer 33 and a plane electrode 32 which are an object to be processed are installed at positions facing the electrode plate 31, High frequency is applied between both electrodes. On the other hand, the etching gas is gas supply system 3
6, the gas enters the internal gas container 35, is rectified by the small-diameter holes of the electrode plate 31, and is jetted toward the wafer 33, where plasma is generated to etch the wafer surface.

Next, a method for manufacturing a SiC electrode plate according to the present invention will be described in the order of steps. First, in the first embodiment, a carbon susceptor 20 is prepared as a mold for forming an electrode plate as shown in FIG. The carbon susceptor 20 has a structure in which a plurality of carbon pins 3 are erected at predetermined intervals on the carbon base plate 2, and the lower end of the carbon pin penetrating the carbon base plate is connected with a nut 4. It can be decomposed after tightening the SiC deposition reaction.

Subsequently, the carbon susceptor 20 is
It is set in a D reactor, and SiC is deposited on a carbon base plate under a normal condition until a predetermined thickness is obtained. This deposited state becomes a plate-shaped SiC molded body 1 in which the carbon pins 3 are filled up to a predetermined thickness, as shown in FIG.

Next, the nut 4 is removed from the plate-like molded body 1 on which SiC is deposited, and the carbon base plate 2 is separated.
The SiC molded body 1 with the carbon pins 3 as shown in FIG. 3 is heated in an oxidizing atmosphere in an electric furnace, and the carbon pins 3 are burned off at 500 to 800 ° C. to obtain the SiC electrode plate 10.

The electrode plate manufactured by the above steps is
Even without performing mechanical processing such as cutting and grinding, the carbon susceptor is a high-precision one that directly reflects the precision of the mold, and its workability is easy and can be manufactured at low cost.

In the second embodiment, only differences from the first embodiment will be described. The attachment of the carbon pin 3 to the carbon base plate 2 is not performed by the nut 4 but by the carbon susceptor 20. A screw is cut into the tip of the carbon pin 3 to screw it into the carbon base plate 2 (not shown), and the carbon base plate 2 at the root of the carbon pin 3 is removed after the carbon base plate 2 is removed after SiC deposition. The plate 2 is separated by cutting it with a cutter. Thereafter, the carbon pins 3 may be burned and removed as in the first embodiment, and the workability and accuracy are almost the same as those in the first embodiment.

[0021]

EXAMPLES The present invention will now be described specifically with reference to examples of the present invention, but the present invention is not limited to these examples. (Example 1) A carbon susceptor 20 having a predetermined number of carbon pins 3 erected at predetermined positions of a carbon base plate 2 as shown in FIG.
Is installed, and methyltrichlorosilane, hydrogen, and argon are each supplied at a pressure of 120 Pa and a flow rate of 0.5 mol / h.
The mixture was supplied under the conditions of r, 5.0 mol / hr and 1.0 mol / hr, and reacted at 1200 ° C. for 24 hours to deposit SiC on the carbon base plate 2.

By this reaction, the outer diameter is 200 mm and the thickness is 3 mm.
mm SiC compact 1 was obtained (FIG. 2). Thereafter, the formed SiC molded body 1 is detached from the carbon base plate 2 with the carbon pins 3 attached (FIG. 3), oxidized in an electric furnace, and unnecessary carbon pins 3 are burned off to form electrodes. An electrode plate 10 (FIG. 4) was obtained by forming a hole 5 for mounting the plate and a small-diameter hole 6 for flowing various gases.

The electrode plate manufactured in this manner is a molded product having no carbon remaining at all and having high accuracy as a mold, and the manufacturing method of the present invention is easy to process, high in accuracy, It represents low cost.

Example 2 Methyltrichlorosilane, hydrogen and argon were each supplied at a pressure of 150 Pa and a flow rate of 1.0 mol.
1 / hr, 3.0 mo / hr, 3.0 mol / hr, and reacted at 1500 ° C. for 8 hours.
SiC was deposited under the same apparatus and conditions as in Example 1,
Remove the mold, burn the pin, outer diameter 200mm, thickness 3mm
Was obtained. The accuracy of the manufactured SiC electrode plate was almost the same as that of Example 1.

The present invention is not limited to the above embodiment. The above embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and has the same effect. Within the technical scope of

For example, when the method of manufacturing an electrode plate according to the present invention is applied, it is considered to be suitable as a method of manufacturing an electrode plate for rectifying a reactive gas in a plasma dry etching apparatus to which a high frequency is applied. Not limited to, for reactive ion etching equipment,
Almost the same operation and effect can be obtained as a method of manufacturing an electrode plate for a plasma ashing apparatus, a sputtering apparatus, or a plasma CVD apparatus, and the method is effectively used.

[0027]

According to the present invention, a silicon carbide electrode plate having high dimensional accuracy can be easily manufactured, and an electrode plate excellent in economic efficiency can be supplied.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing an example of a carbon susceptor used in a manufacturing method of the present invention.

FIG. 2 is an explanatory diagram for explaining a manufacturing method of the present invention;
This shows a state where SiC is deposited on the carbon susceptor by the CVD method.

FIG. 3 is an explanatory diagram for explaining the manufacturing method of the present invention;
This shows a state where the nut of the carbon susceptor and the carbon base plate have been removed.

FIG. 4 is a plan view of a SiC electrode plate manufactured by the method of the present invention.

FIG. 5 is a schematic view of a plasma dry etching apparatus, which is an example of an apparatus provided with a SiC electrode plate manufactured according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... SiC molded object, 2 ... Carbon base plate, 3 ... Carbon pin, 4 ... Carbon nut, 5 ... Electrode plate mounting hole, 6 ... Small diameter hole, 10 ... SiC electrode plate, 20 ... Carbon susceptor, 30 ... Plasma dry etching Apparatus, 31: SiC electrode plate, 32: flat electrode, 33: semiconductor wafer, 34: chamber, 35: internal gas container, 36: gas supply system, 37: gas discharge system

Claims (4)

[Claims] 1. A method of manufacturing an electrode plate for a reaction apparatus for applying a high frequency used in the manufacture of a semiconductor device, wherein the electrode plate is formed by depositing silicon carbide (SiC) on a carbon susceptor having a desired shape by a CVD method. A method for producing a silicon carbide electrode plate, characterized in that the method comprises: 2. A method of manufacturing an electrode plate for a reaction apparatus for applying a high frequency used in the manufacture of a semiconductor device, wherein the electrode plate is formed by depositing silicon carbide on a carbon susceptor having a desired shape by CVD. And separating the carbon susceptor from silicon carbide, and oxidizing the formed silicon carbide to remove unnecessary carbon, thereby producing a silicon carbide electrode plate. 3. The silicon carbide electrode according to claim 1, wherein said carbon susceptor has a structure in which a plurality of carbon pins are erected at predetermined intervals on a carbon base plate. Plate manufacturing method. 4. A structure in which the carbon pins of the carbon susceptor can be detached from the carbon base plate. After the silicon carbide deposition reaction is completed, the carbon base plate is removed, and only the carbon pins are oxidized and incinerated to form a silicon carbide plate. 4. The method for producing a silicon carbide electrode plate according to claim 3, wherein the reaction gas rectifying small-diameter hole and the electrode plate mounting hole corresponding to the outer shape of the carbon pin are formed.