JPH10313108A - Solid-state image-pickup element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the smear for making the image quality good by forming a layer insulation film having a poor reflow property at an effective pixel area below a screen film, and a layer insulation film having a good flatness at the periphery of the pixel area and optical black area below the screen film. SOLUTION: In a semiconductor substrate 2 a charge transfer part, a gate insulation film 7, vertical transfer electrodes 8, layer insulation film 9, a screen film 10, etc., are formed. The screen film 10 has openings for incidence of lights on photodetectors 3 at the effective pixel area and blocks the lights from incidence on the photodetectors at the optical black part OPB. At the effective pixel area, on a first poorly reflowing insulation film 13 a second good-flatness insulation film 14 is formed at the OPB with both insulation films forming a layer insulation film 9.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device such as a CCD solid-state imaging device having an optical black portion and an effective pixel portion.

[0002]

2. Description of the Related Art Usually, in a CCD solid-state imaging device,
In order to set the black level, an optical black portion in which the light receiving portion is covered with a light-shielding film made of a metal having high light-shielding properties, such as Al, is provided outside the effective pixel portion, and this optical black portion (hereinafter referred to as an OPB portion). Is a black level.

FIG. 7 shows a plan view of an example of a CCD solid-state imaging device. The CCD solid-state imaging device 50 includes an imaging unit 51 in which a plurality of light receiving units 53 serving as pixels are arranged in a matrix, and a vertical transfer register 52 having a CCD structure is provided on one side of each light receiving unit 53 column. And a horizontal transfer register 54 disposed on one side of the horizontal transfer register 51. Although not shown, an output circuit or the like is connected to the output side of the horizontal transfer register 54. The imaging section 51 has an effective pixel section 56 that requires light reception, and an optical black section (OPB section) 57 for defining a black level in the imaging section 51. Register 5
A light-shielding film is formed on the entire surface 4 as shown by hatching. Reference numeral 58 denotes a peripheral portion where the horizontal transfer register 54, other output circuits, wiring, and the like exist.

Conventionally, an effective pixel section 56, an OPB section 57,
In the peripheral portion 58 of the output circuit and the wiring, the insulating film used under the metal film for wiring and light shielding (mainly an Al film is used) is the same material.

[0005]

Here, FIG. 5 shows a schematic configuration of a conventional CCD solid-state imaging device in which an insulating film having poor reflow properties, that is, poor flatness, is used as an insulating film below a light shielding film. The figure is shown. FIG. 5A is a cross-sectional view of the effective pixel section in the horizontal direction (so-called H direction), and FIG. 5B is a horizontal cross-sectional view of the OPB section.

The CCD solid-state imaging device 21 includes a light receiving unit 23 for performing photoelectric conversion and a light receiving unit 2 in a semiconductor substrate 22.
3, a read gate unit (not shown) for reading out signal charges, a charge transfer unit 24 forming a vertical transfer register for transferring the read signal charges, and a channel stop region (not shown) serving as an element isolation unit are formed respectively. Be done. The read gate and the channel stop region are formed below the vertical transfer electrode 28. A vertical transfer register is formed on the charge transfer unit 24 by the charge transfer unit 24, the gate insulating film 27, and the vertical transfer electrode 28 via the gate insulating film 27. Further, an interlayer insulating film 29 is formed so as to cover the vertical transfer electrode 28, and a light-shielding film 30 made of a metal having a high light-shielding property such as Al is formed via the interlayer insulating film 29. This light-shielding film 30 is used in the effective pixel portion.
An opening is formed on the light receiving section 23 so that light enters the light receiving section 23. In the OPB section, the light also covers the light receiving section 23 so that light does not enter the light receiving section 23.

A passivation film 31 is formed on the light-shielding film 30, and a flattening film 32 is formed thereon to flatten the surface. Further, although not shown, a color filter, an on-chip lens, and the like are formed on the flattening film 32, although not shown.

In this example, the interlayer insulating film 29 under the light-shielding film 30 is made of a film having poor reflow properties, such as PSG (phosphosilicate glass), that is, a film that is not easily reflowed. Then, as shown in FIG. 5A, the thickness t of the interlayer insulating film 29 is
3A, the vertical transfer electrode 28 is opened from the opening of the light shielding film 30.
It is formed so as to become thinner toward the side. Therefore, even if the opening of the light-shielding film 30 is displaced in the direction in which the overhang portion 30a becomes smaller, that is, in the left direction in FIG. 5A, the so-called smear phenomenon occurs because the thickness t of the interlayer insulating film becomes smaller at this time. The resulting leakage of the incident light L into the charge transfer section 24 does not increase.

Thus, in the effective pixel section 56, P
It is advantageous to use a film that is difficult to reflow, such as SG, for the interlayer insulating film 29.

On the other hand, when a film which is difficult to reflow, such as PSG (phosphosilicate glass), is used as the interlayer insulating film, there is a disadvantage.

That is, if the flatness of the interlayer insulating film 29 is poor,
Since the coverage of the Al film or the like constituting the light-shielding film 30 or the like is deteriorated, the wiring of the Al film is easily cut at a place where there is a step in the base layer. In the OPB unit 57,
Since light is easily transmitted at a portion where the light-shielding film 30 at the end of the vertical transfer electrode 28 is thin, that is, at a portion surrounded by a dotted line in FIG. 5B, there is a problem of image quality deterioration such as a white screen.

As a measure against this problem, a light shielding film 30 is used.
Is to be improved. In order to improve the coverage, it is conceivable, for example, to raise the sputtering temperature of the Al film. In this case, the growth of Al grains may adversely affect the light-shielding property. It was difficult.

On the other hand, when a film having good flatness is used for the interlayer insulating film 29 under the light shielding film 30, the opposite phenomenon occurs. For example, in the peripheral portion 58, A
The coverage of the 1 film is improved, and disconnection is less likely to occur.

FIG. 6 is a schematic diagram showing a conventional CCD solid-state imaging device in which an insulating film having good flatness is used as an insulating film below a light-shielding film. FIG. 6A is a cross-sectional view of the effective pixel portion in the horizontal direction (so-called H direction), and FIG.
FIG. 3 shows a horizontal section through the section.

In this CCD solid-state imaging device 41, FIG.
As shown in (5), in the OPB portion 57, since the light-shielding film 30 does not become thin even at the end of the vertical transfer electrode 28, transmission of the incident light L can be suppressed. However, in the effective pixel portion 56 shown in FIG. 6A, contrary to the case of FIG. 5A, if the opening of the light-shielding film 30 is shifted, the thickness t of the interlayer insulating film 29 becomes large, so that incident light is reduced. It easily enters the charge transfer section 24 through the interlayer insulating film 29, and the smear phenomenon easily occurs.

As a measure for preventing the smear phenomenon, for example, it is conceivable to reduce the thickness of the interlayer insulating film 29 itself. However, since the interlayer insulating film 29 also plays a role of passivation against external contamination, it is difficult to reduce the thickness. There is a limit.

This problem becomes particularly noticeable with the downsizing of the solid-state imaging device. If the size of the unit cell is reduced, the overhang portion 30a of the light-shielding film 30 cannot be formed so large that smear tends to occur in response to the variation in the displacement of the opening. Also, since the opening itself becomes narrow, it is necessary to make the height direction of the image sensor thinner,
The light-shielding film 30 also needs to be made thinner, so that the light-shielding property is reduced, and the light-shielding film 30 becomes weak against disconnection.

In order to solve the above-mentioned problems, the present invention provides a solid-state image pickup device which is free from smears, has good image quality, has no breakage, and can be manufactured with high reliability.

[0019]

According to the solid-state imaging device of the present invention, an interlayer insulating film under a light-shielding film is formed by an insulating film having poor reflow properties in an effective pixel portion. on the other hand,
In the peripheral portion other than the effective pixel portion and the optical black portion, an interlayer insulating film below the light-shielding film is formed by an insulating film having good flatness.

According to the configuration of the present invention described above, in the effective pixel portion, the interlayer insulating film below the light shielding film is formed by the insulating film having poor reflow properties. Since the thickness of the interlayer insulating film hardly changes toward the vicinity of the step, the occurrence of the smear phenomenon does not increase even if the opening of the light-shielding film on the light receiving unit is shifted. In the peripheral portion and the OPB portion, the interlayer insulating film under the light-shielding film is formed of an insulating film having good flatness. Is difficult to cut. Further, in the OPB portion, the light-shielding film covering the step portion becomes thicker due to the good flatness of the interlayer insulating film, and light transmission from near the end portion of the step portion can be prevented.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, an interlayer insulating film under a light-shielding film is formed by an insulating film having poor reflow properties in an effective pixel portion, and a peripheral portion other than the effective pixel portion and an optical black portion are formed. A solid-state imaging device in which an interlayer insulating film below a light-shielding film is formed by an insulating film having good flatness.

Hereinafter, an example of the solid-state imaging device of the present invention will be described with reference to the drawings. FIG. 1 is a horizontal sectional view of an example of the solid-state imaging device of the present invention, in this example, an example of an interline transfer type CCD solid-state imaging device. FIG. 1A is a horizontal sectional view of an effective pixel portion, and FIG. 1B is a horizontal sectional view of an optical black portion.

In the CCD solid-state imaging device 1, a light receiving unit 3 for performing photoelectric conversion, a read gate unit (not shown) for reading signal charges from the light receiving unit 3, and a read signal charge are transferred into a semiconductor substrate 2. A charge transfer section 6 constituting a vertical transfer register and a channel stop region (not shown) serving as an element isolation section are formed. Note that the read gate and the channel stop region are formed below the vertical transfer electrode 8. A gate insulating film 7 on the charge transfer section 6
, A vertical transfer register is constituted by the charge transfer section 6, the gate insulating film 7, and the vertical transfer electrode 8. Further, an interlayer insulating film 9 is formed to cover the vertical transfer electrode 8,
A light-shielding film 10 made of a metal having a high light-shielding property such as Al is formed via the interlayer insulating film 9. This light shielding film 1
In the effective pixel portion, an opening is formed on the light receiving portion 3 so that light is incident on the light receiving portion 3. In the optical black portion (hereinafter referred to as an OPB portion), the light receiving portion 3 also covers the light receiving portion 3. Thus, light is prevented from being incident on the light receiving section 3.

On the light-shielding film 10, a passivation film 11 is formed, on which a flattening film 12 is formed to flatten the surface. Although not shown, a color filter, an on-chip lens, and the like are further formed as necessary.

In this embodiment, as shown in FIG. 1A, in the effective pixel portion, the first insulating film 13 having poor reflow property, that is, poor flatness, such as a PSG film, is formed of the light shielding film 10 and the vertical transfer electrode 8. Is used as the interlayer insulating film 9 between them. On the other hand, FIG.
B, in the OPB portion, the first insulating film 1
Further, a second insulating film 14 having good flatness such as BPSG (borophosphosilicate glass) is formed on the third insulating film 3 to form an interlayer insulating film 9.

In this way, in the effective pixel portion, the interlayer insulating film 9 is formed on the first insulating film 13 having poor reflow properties.
Therefore, the thickness of the interlayer insulating film 9 in the direction from the end of the light shielding film 10 to the vertical transfer electrode 8 hardly changes. Thus, even if the opening of the light-shielding film 10 shifts, the thickness of the interlayer insulating film 9 hardly changes, so that it is possible to prevent the smear phenomenon from appearing due to the unevenness of the opening shift.

In the OPB portion, the interlayer insulating film 9
Is composed of the first insulating film 13 and the second insulating film 14 having good flatness formed thereon, so that the upper surface of the interlayer insulating film 9 is formed smoothly. As a result, the thickness of the light-shielding film 10 in the vicinity of the vertical transfer electrode 8 is sufficiently ensured, and the incident light is reliably shielded, thereby preventing the image quality from being deteriorated due to light leaking from a thin portion of the light-shielding film. be able to.
In addition, disconnection of the light shielding film 10 and the wiring is prevented.

The above-described solid-state imaging device 1 is manufactured, for example, as follows. First, a vertical transfer electrode 8 and a horizontal transfer electrode (not shown) are formed on a semiconductor substrate 2 via a gate insulating film 7.

Next, the first insulating film 1 which covers the vertical transfer electrode 8 and is difficult to be flattened even when reflowed of PSG or the like is formed.
Form 3 Next, a BPS is formed on the first insulating film 13.
A second insulating film 14 made of G or the like and having good flatness is formed.

Next, after applying a resist on the surface, the resist is exposed on a stepper and developed to remove only the resist on the effective pixel portion and open a window.

Next, using the resist as a mask, the second insulating film 14 in the effective pixel portion is removed by wet etching using hydrofluoric acid or the like + water. As a result, in the effective pixel portion, the interlayer insulating film 9 composed of only the first insulating film 13 is formed.

Next, the resist is peeled off,
The reflow is performed at 0 ° C., and the second insulating film 14 in the OPB portion is
Is flattened. Thereby, in the OPB portion, the interlayer insulating film 9 composed of the first insulating film 13 and the second insulating film 14 and having a smooth surface is formed.

Thereafter, a light-shielding film 10 is formed on the interlayer insulating film 9 and, in the effective pixel portion, the light-shielding film 1 on the light-receiving portion 3 is formed.
An opening is formed at 0. Then, a passivation film 11 is formed to cover the light-shielding film 10, and a flattening film 12 is further formed to flatten the surface, whereby the CCD solid-state imaging device 1 shown in FIG. 1 can be formed.

In the above-described manufacturing process, the reflow may be performed in a step subsequent to the step of forming an opening in the light-shielding film 10 in the effective pixel portion.

Since it is desired to leave only the first insulating film 13 having poor reflow properties in the effective pixel portion, only the second insulating film 14 in the effective pixel portion is etched off in the wet etching process. At this time, the selectivity of the etching solution to the second insulating film 14 and the first insulating film 13, for example, B
A higher PSG / PSG selection ratio is more preferable. For example, when water is added to a hydrofluoric acid-based solution, the etch rate of BPSG is increased, and the selectivity between BPSG and PSG can be increased.

In order to further increase the selectivity, it is conceivable to anneal once at about 1000 ° C. after forming the PSG.

In the above-described example, wet etching is used in the etching process of the second insulating film 14 in the effective pixel portion, but instead of wet etching, for example, isotropic S
An iO ₂ etcher may be used. However, in this case,
Since it is difficult to obtain a BPSG / PSG selectivity, it is necessary to perform an etching step before reflowing the BPSG of the second insulating film 14.

Next, another example of the solid-state imaging device according to the present invention will be described. This example uses the CCD shown in FIG.
In addition to the configuration of the solid-state imaging device 1, a first insulating film 1
This is an example in which an etching stop layer is provided between the third insulating film 14 and the second insulating film 14 in order to prevent the first insulating film 13 from being etched. The configuration in this case is as shown in FIG. FIG.
FIG. 2A is a horizontal sectional view of the effective pixel portion, and FIG. 2B is a horizontal sectional view of the optical black portion.

The CCD solid-state imaging device 18 is different from the CCD solid-state imaging device 1 shown in FIG.
An etching stop layer 15 such as a SiN film is formed between the first insulating film 14 and the second insulating film 14. Other configurations are the same as those of the CCD solid-state imaging device 1 in FIG.

With such a structure, the first insulating film 13 is not etched since it is protected by the etching stop layer 15. Therefore, the first insulating film 13 and the second
Since the restriction on the selectivity with respect to the insulating film 14 of FIG.
Instead of G, another film having good flatness, such as SOG (spin-on-glass) of a SiO ₂ film type, can be used as the second insulating film 14. Further, the etching can be performed by any of dry etching and wet etching.

The solid-state imaging device 18 of this example can be manufactured, for example, as follows. First, a vertical transfer electrode 8 and a horizontal transfer electrode (not shown) are formed on a semiconductor substrate 2 via a gate insulating film 7.

Next, a first insulating film 13 made of PSG or the like which is difficult to be flattened even when reflowed is formed. Next, an etching stop layer 15 for a buffer made of a SiN film or the like formed by plasma CVD or low pressure CVD is formed. Next, a second insulating film 14 made of BPSG, SOG, or the like and having good flatness is formed.

Next, after applying a resist on the surface, the resist is exposed on a stepper and developed to remove only the resist on the effective pixel portion and open a window.

Next, using the resist as a mask, the second insulating film 14 in the effective pixel portion is removed by wet etching or dry etching as in the above-described example. At this time, since the etching stop layer 15 is formed between the first insulating film 13 and the second insulating film 14, the underlying first insulating film 13 is not etched. As a result, in the effective pixel portion, the interlayer insulating film 9 including the first insulating film 13 and the etching stop layer 15 is formed.

Next, the resist is peeled off,
The reflow is performed at 0 ° C., and the second insulating film 14 in the OPB portion is
Is flattened. Thereby, in the OPB portion, the first insulating film 13, the etching stop layer 15, and the second insulating film 1 are formed.
4 to form an interlayer insulating film 9 having a smooth surface.

In the above-described steps, the reflow may be performed in a step subsequent to the step of forming the second insulating film 14.

In the above example, the first insulating film 13 is deposited first, and then the second insulating film 14 is deposited. However, after the second insulating film 14 is deposited first, Even if the first insulating film 13 is deposited, an interlayer insulating film 9 having similar characteristics can be formed to obtain a target solid-state imaging device. FIG. 3 shows an example of the configuration in that case. FIG. 3A is a horizontal sectional view of the effective pixel portion, and FIG. 3B is a horizontal sectional view of the optical black portion.

As shown in FIG. 3A, the CCD solid-state imaging device 19 has a first insulating film 1 made of a PSG film or the like having poor reflow properties on a vertical transfer electrode 8 in an effective pixel portion.
3 forms an interlayer insulating film 9. On the other hand, as shown in FIG. 3B, in the OPB portion, the interlayer insulating film 9 is formed by laminating the etching stop layer 15, the second insulating film 14, and the first insulating film 13.

In this way, in the effective pixel portion, the interlayer insulating film 9 is formed on the first insulating film 13 having poor reflow properties.
As a result, the thickness of the interlayer insulating film 9 in the direction from the end of the light-shielding film 10 to the vertical transfer electrode 8 is hardly changed, and the smear phenomenon due to the variation in the displacement of the opening is similar to the above-described example. Can be prevented from appearing.

In the OPB portion, the first insulating film 13 is formed on the planarized second insulating film 14,
Since the upper surface of the interlayer insulating film 9 is formed smoothly, it is possible to prevent a decrease in image quality due to leakage of light from a thin portion of the light shielding film as in the above-described example. In addition, disconnection of the light shielding film 10 and the wiring is prevented.

The manufacture of the CCD solid-state imaging device 19 can be performed, for example, as follows. In this example,
In particular, before depositing the first insulating film 13, reflow is performed to flatten the second insulating film.

First, a gate insulating film 7 is formed on a semiconductor substrate 2.
, A vertical transfer electrode 8 and a horizontal transfer electrode (not shown) are formed.

Next, a buffer etching stop layer 15 made of a SiN film or the like formed by plasma CVD or low pressure CVD is formed. In the previous example, the etching stop layer 15 was provided between the first insulating film 13 and the second insulating film 14, but in this example, the etching stop layer is provided on the gate insulating film 7.

Subsequently, a second insulating film 14 made of BPSG, SOG or the like and having good flatness is formed.

Next, after applying a resist on the surface, the resist is exposed on a stepper and developed to remove only the resist on the effective pixel portion and open a window.

Next, using the resist as a mask, the second insulating film 14 in the effective pixel portion is removed by wet etching or dry etching as in the above-described example. At this time, since the etching stop layer 15 is formed between the gate insulating film 7 and the second insulating film 14, the underlying gate insulating film 7 is not etched. further,
The etching stop layer is removed by an etching method capable of obtaining a selectivity between the gate insulating film 7 and the etching stop layer 15.

Next, the resist is peeled off,
The reflow is performed at 0 ° C., and the second insulating film 14 in the OPB portion is
Is flattened. As a result, the surface of the second insulating film 14 becomes smooth.

Next, a first insulating film 13 made of PSG or the like which is difficult to be flattened even when reflowed is formed. Thereby, in the effective pixel portion, the interlayer insulating film 9 composed of the first insulating film 13 is formed. In the OPB portion, the first insulating film 13 is formed on the second insulating film 14 having a smooth surface.
Is formed, the surface of the first insulating film also becomes smooth, and the interlayer insulating film 9 having a smooth surface is formed by the etching stop layer 15, the second insulating film 14, and the first insulating film 13. Is done.

In the above-described steps, the reflow may be performed in a step subsequent to the step of forming the second insulating film 14.

FIG. 4 shows still another example of the solid-state imaging device of the present invention. FIG. 4A is a horizontal sectional view of the effective pixel portion, and FIG. 4B is a horizontal sectional view of the optical black portion.

As shown in FIG. 4A, in the CCD solid-state imaging device 20, in the effective pixel portion, a second insulating film 14 such as BPSG and a PSG film on the vertical transfer electrode 8 are used. The first insulating film 13 forms the interlayer insulating film 9. On the other hand, as shown in FIG.
In the portion, the interlayer insulating film 9 is constituted by the second insulating film 14 having good flatness.

In this way, in the effective pixel portion, the interlayer insulating film 9 is formed in the direction from the end of the light shielding film 10 to the vertical transfer electrode 8 by the upper first insulating film 13 having poor reflow properties. The structure is such that the thickness of the interlayer insulating film 9 is hardly changed, and similarly to the above-described example, it is possible to prevent the smear phenomenon from appearing due to the variation in the displacement of the opening.

In the OPB portion, the upper surface of the interlayer insulating film 9 is formed smoothly by the flattened second insulating film 14, and therefore, as in the above-described example, the upper surface of the interlayer insulating film 9 starts from the thin portion of the light shielding film. It is possible to prevent a decrease in image quality due to light leakage. In addition, disconnection of the light shielding film 10 and the wiring is prevented.

The manufacture of the CCD solid-state imaging device 20 can be performed, for example, as follows. In this example, particularly, before the reflow, the peripheral portion and the OPB portion are opened and the first portion is opened.
Is etched off, and then reflow is performed.

First, the gate insulating film 7 is formed on the semiconductor substrate 2.
, A vertical transfer electrode 8 and a horizontal transfer electrode (not shown) are formed.

Next, a second insulating film 14 made of BPSG, SOG or the like and having good flatness is formed. Subsequently, the first insulating film 1 that is difficult to be flattened even when reflowed from PSG or the like is used.
Form 3

Next, after a resist is applied to the surface, exposure and development are performed with a stepper to remove the resist in the peripheral portion and the OPB portion and open a window. Next, using the resist as a mask, the first insulating film 13 in the peripheral portion and the OPB portion is removed by wet etching using hydrofluoric acid or the like + water.

Next, the resist is peeled off,
The reflow is performed at 0 ° C., and the second insulating film 14 in the OPB portion is
Is flattened. As a result, the surface of the second insulating film 14 becomes smooth. At this time, the effective pixel portion is reflowed with the first insulating film 13 laminated on the second insulating film 14, so that the second insulating film 14 is obstructed by the first insulating film 13 and reflowed. Not done.

As a result, in the effective pixel portion, an interlayer insulating film 9 which is constituted by the second insulating film 14 and the first insulating film 13 and is thin near the end of the vertical transfer electrode 8 is formed. In the OPB portion, the second insulating film 14 having a smooth surface is used.
And an interlayer insulating film 9 having a smooth surface is formed.

The solid-state imaging device of the present invention is not limited to the above-described example, and may take various other configurations without departing from the gist of the present invention.

[0071]

According to the solid-state imaging device of the present invention described above, in the effective pixel portion, the interlayer insulating film below the light-shielding film is formed by the insulating film having poor reflow properties, so that the light-shielding film on the light-receiving portion is formed. The smear characteristics are stabilized against the variation in the displacement of the openings.

On the other hand, in the peripheral portion and the OPB portion, the light-shielding film and the interlayer insulating film below the wiring layer are made of an insulating film having good flatness. However, the wiring layer is not easily cut, and thus the reliability is improved. Further, in the OPB portion, the light-shielding film covering the step portion becomes thicker because the flatness of the interlayer insulating film is good, so that light transmission can be prevented, and deterioration of image quality due to floating black level can be prevented.

Therefore, according to the present invention, it is possible to construct a solid-state image sensor with less smear and good image quality, and to manufacture the solid-state image sensor with high reliability.

In particular, in a solid-state imaging device in which the unit cell size is as small as 6 μm or less in both the vertical transfer direction and the horizontal transfer direction, the variation in the smear characteristic usually becomes large with respect to the variation in the opening. Is high.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an example of a solid-state imaging device of the present invention. FIG. 3A is a horizontal sectional view of an effective pixel portion. B is a horizontal sectional view of the optical black portion.

FIG. 2 is a schematic configuration diagram of another example of the solid-state imaging device of the present invention. FIG. 3A is a horizontal sectional view of an effective pixel portion. B is a horizontal sectional view of the optical black portion.

FIG. 3 is a schematic configuration diagram of another example of the solid-state imaging device of the present invention. FIG. 3A is a horizontal sectional view of an effective pixel portion. B is a horizontal sectional view of the optical black portion.

FIG. 4 is a schematic configuration diagram of still another example of the solid-state imaging device of the present invention. FIG. 3A is a horizontal sectional view of an effective pixel portion. B is a horizontal sectional view of the optical black portion.

FIG. 5 is a schematic configuration diagram of a CCD solid-state imaging device using an insulating film having poor reflow properties as an interlayer insulating film. FIG. 3A is a horizontal sectional view of an effective pixel portion. B is a horizontal sectional view of the optical black portion.

FIG. 6 shows a CC using an insulating film having good flatness as an interlayer insulating film.
It is a schematic structure figure of D solid-state image sensing device. FIG. 3A is a horizontal sectional view of an effective pixel portion. B is a horizontal sectional view of the optical black portion.

FIG. 7 is a plan view of a CCD solid-state imaging device.

[Explanation of symbols]

1, 18, 19, 20 CCD solid-state imaging device, 2 semiconductor substrate, 3 light receiving section, 4 charge transfer section, 7 gate insulating film, 8 vertical transfer electrode, 9 interlayer insulating film, 10 light shielding film,
DESCRIPTION OF SYMBOLS 11 passivation film, 12 planarization film, 13 1st insulating film, 14 2nd insulating film, 15 etching stop layer, 21,50 CCD solid-state image sensor, 22 semiconductor substrate, 23 light receiving part, 24 charge transfer part, 27 Gate insulating film, 28 vertical transfer electrodes, 29 interlayer insulating film,
Reference Signs List 30 light shielding film, 31 passivation film, 32 flattening film, 51 imaging unit, 52 vertical transfer register, 53
Light receiving unit, 54 horizontal transfer register, 56 effective pixel unit,
57 Optical black part (OPB part), 58 peripheral part

Claims (1)

[Claims] In an effective pixel portion, an interlayer insulating film under a light-shielding film is formed by an insulating film having poor reflow properties, and flatness is excellent in a peripheral portion other than the effective pixel portion and in an optical black portion. A solid-state imaging device characterized in that an interlayer insulating film under a light-shielding film is formed by a simple insulating film.