JPH10303405A - Method for eliminating defective pixels on ccd image pick-up device - Google Patents
Method for eliminating defective pixels on ccd image pick-up deviceInfo
- Publication number
- JPH10303405A JPH10303405A JP9110792A JP11079297A JPH10303405A JP H10303405 A JPH10303405 A JP H10303405A JP 9110792 A JP9110792 A JP 9110792A JP 11079297 A JP11079297 A JP 11079297A JP H10303405 A JPH10303405 A JP H10303405A
- Authority
- JP
- Japan
- Prior art keywords
- ccd image
- defective pixel
- pixel
- defective
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＣＣＤ撮像素子の
欠陥画素を解消する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for eliminating defective pixels of a CCD image sensor.
【０００２】[0002]
【従来の技術】ＣＣＤ撮像素子は一般に、シリコンウェ
ーハ上に、光センサである多数の微小な画素をマトリク
ス状に配列することで構成されている。ところで、ＣＣ
Ｄ撮像素子を形成するためのシリコンウェーハには時に
局所的な格子欠陥が生じている場合があり、そのような
シリコンウェーハでは正常なＣＣＤ撮像素子を製造する
ことはできない。通常、格子欠陥があると、電子の湧き
出しによってその箇所に形成された画素は欠陥画素とな
り、光が入射していないにもかかわらず、光を検知して
いるかのように信号（光検知信号）を出力する。したが
って、撮影した画像上では、欠陥画素に対応する箇所は
常に白い点として表示されてしまう。図２は欠陥画素を
含むＣＣＤ撮像素子により撮影した画像を示す説明図で
ある。この画像１０２はＣＣＤ撮像素子に光が入射しな
いようにして撮影を行った場合の画像であり、白点１０
４が欠陥画素により生じたものである。2. Description of the Related Art In general, a CCD image pickup device is constituted by arranging a large number of minute pixels as optical sensors in a matrix on a silicon wafer. By the way, CC
A silicon wafer for forming the D imaging device sometimes has local lattice defects, and a normal CCD imaging device cannot be manufactured using such a silicon wafer. Normally, when there is a lattice defect, the pixel formed at that location due to the source of electrons becomes a defective pixel, and a signal (light detection signal ) Is output. Therefore, on a captured image, a portion corresponding to a defective pixel is always displayed as a white dot. FIG. 2 is an explanatory diagram showing an image photographed by a CCD image pickup device including a defective pixel. This image 102 is an image obtained when an image is captured without light incident on the CCD image sensor, and a white point 10
4 is caused by a defective pixel.
【０００３】[0003]
【発明が解決しようとする課題】このような白点１０４
は白キズとも呼ばれ、画質を大幅に劣化させるため、Ｃ
ＣＤ撮像素子を製造する際の歩留りを大きく左右する原
因となっている。本発明はこのような問題を解決するた
めになされたもので、その目的はＣＣＤ撮像素子に生じ
た欠陥画素を解消する方法を提供することにある。[0005] Such a white spot 104
Is also called white flaw, and greatly degrades the image quality.
This is a factor that greatly affects the yield when manufacturing a CD imaging device. The present invention has been made to solve such a problem, and an object of the present invention is to provide a method for eliminating a defective pixel generated in a CCD image sensor.
【０００４】[0004]
【課題を解決するための手段】本発明は上記目的を達成
するため、ＣＣＤ撮像素子の欠陥画素を解消する方法で
あって、前記ＣＣＤ撮像素子の前記欠陥画素の表面に、
レーザ光を画素と同程度の大きさの光スポットにして照
射し、レーザ光照射箇所の温度を上昇させることを特徴
とする。According to the present invention, there is provided a method for eliminating a defective pixel of a CCD image sensor, the method comprising:
The method is characterized in that a laser beam is irradiated in the form of a light spot having a size similar to that of a pixel, and the temperature of the laser beam irradiated portion is raised.
【０００５】本発明のＣＣＤ撮像素子の欠陥画素解消方
法では、ＣＣＤ撮像素子の欠陥画素の表面に、レーザ光
を画素と同程度の大きさの光スポットにして照射し、レ
ーザ光照射箇所の温度を上昇させる。したがって欠陥画
素の箇所に生じている、シリコンウェーハの格子欠陥が
アニールされて解消し、その結果、欠陥画素は正常な画
素となる。In the method of eliminating defective pixels of a CCD image pickup device according to the present invention, the surface of the defective pixel of the CCD image pickup device is irradiated with a laser beam in the form of a light spot having a size similar to that of the pixel, and the temperature of the laser beam irradiated portion is reduced. To rise. Therefore, the lattice defect of the silicon wafer, which has occurred at the position of the defective pixel, is annealed and eliminated, and as a result, the defective pixel becomes a normal pixel.
【０００６】[0006]
【発明の実施の形態】次に本発明の実施の形態を実施例
にもとづき図面を参照して説明する。図１は本発明によ
るＣＣＤ撮像素子の欠陥画素解消方法の一例を説明する
ためのＣＣＤ撮像素子周辺の概略側面図である。本実施
例のＣＣＤ撮像素子の欠陥画素解消方法では、まず、画
素がマトリクス状に形成されたＣＣＤ撮像素子２（ＣＣ
Ｄ撮像素子チップ）を、テーブル４上に配置し、そのＣ
ＣＤ撮像素子２の欠陥画素６に対して、上方よりレーザ
光８を照射する。レーザ光８はレーザ光源１０より放射
され、光学系１２を通過することで収束し、上記欠陥画
素６と同程度の大きさの光スポットとなって欠陥画素６
に入射する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described based on embodiments with reference to the drawings. FIG. 1 is a schematic side view around a CCD image sensor for explaining an example of a method for eliminating defective pixels of the CCD image sensor according to the present invention. In the method for eliminating defective pixels of the CCD image pickup device of the present embodiment, first, the CCD image pickup device 2 (CC
D image sensor chip) is placed on the table 4 and its C
The defective pixel 6 of the CD imaging device 2 is irradiated with a laser beam 8 from above. The laser light 8 is emitted from the laser light source 10 and converges by passing through the optical system 12 to form a light spot having the same size as the defective pixel 6.
Incident on.
【０００７】そして、レーザ光源１０のパワーを調整す
ることで、光スポットが当たった欠陥画素６の箇所にお
ける温度を１５０°Ｃ〜４００°Ｃの範囲内の温度とな
るように設定する。これにより、欠陥画素６の箇所に生
じている、シリコンウェーハの格子欠陥がアニールされ
て解消し、その結果、欠陥画素６は正常な画素となる。
したがって、このＣＣＤ撮像素子２により撮影した画像
は、図２に示したような白点１０２（白キズ）のない正
常な画像となる。Then, by adjusting the power of the laser light source 10, the temperature at the position of the defective pixel 6 hit by the light spot is set so as to be in the range of 150 ° C. to 400 ° C. As a result, the lattice defect of the silicon wafer generated at the position of the defective pixel 6 is annealed and eliminated, and as a result, the defective pixel 6 becomes a normal pixel.
Therefore, the image photographed by the CCD image sensor 2 is a normal image having no white spots 102 (white defects) as shown in FIG.
【０００８】なお、ここでは本発明について実施例にも
とづき説明したが、本発明はこの例に限定されることな
く種々の形態で実施できることは言うまでもない。Although the present invention has been described based on the embodiments, it goes without saying that the present invention is not limited to the embodiments but can be implemented in various forms.
【０００９】[0009]
【発明の効果】以上説明したように本発明のＣＣＤ撮像
素子の欠陥画素解消方法では、ＣＣＤ撮像素子の欠陥画
素の表面に、レーザ光を画素と同程度の大きさの光スポ
ットにして照射し、レーザ光照射箇所の温度を上昇させ
る。したがって欠陥画素の箇所に生じている、シリコン
ウェーハの格子欠陥がアニールされて解消し、その結
果、欠陥画素は正常な画素となる。As described above, in the method for eliminating defective pixels of a CCD image pickup device according to the present invention, the surface of the defective pixel of the CCD image pickup device is irradiated with a laser beam in the form of a light spot approximately the same size as the pixel. Then, the temperature of the laser beam irradiation location is increased. Therefore, the lattice defect of the silicon wafer, which has occurred at the position of the defective pixel, is annealed and eliminated, and as a result, the defective pixel becomes a normal pixel.
【図１】本発明によるＣＣＤ撮像素子の欠陥画素解消方
法の一例を説明するためのＣＣＤ撮像素子周辺の概略側
面図である。FIG. 1 is a schematic side view of the periphery of a CCD image sensor for explaining an example of a method for eliminating defective pixels of the CCD image sensor according to the present invention.
【図２】欠陥画素を含むＣＣＤ撮像素子により撮影した
画像を示す説明図である。FIG. 2 is an explanatory diagram showing an image photographed by a CCD imaging device including a defective pixel.
【符号の説明】 ２……ＣＣＤ撮像素子、４……テーブル、６……欠陥画
素、８……レーザ光、１０……レーザ光源、１２……光
学系、１０２……画像、１０４……白点。[Description of Signs] 2 ... CCD imaging device, 4 ... Table, 6 ... Defective pixel, 8 ... Laser light, 10 ... Laser light source, 12 ... Optical system, 102 ... Image, 104 ... White point.
Claims (5)
法であって、 前記ＣＣＤ撮像素子の前記欠陥画素の表面に、レーザ光
を画素と同程度の大きさの光スポットにして照射し、レ
ーザ光照射箇所の温度を上昇させることを特徴とするＣ
ＣＤ撮像素子の欠陥画素解消方法。1. A method for resolving defective pixels of a CCD image sensor, comprising: irradiating a laser spot on the surface of the defective pixel of the CCD image sensor with a light spot having a size similar to that of the pixel; C, characterized by raising the temperature of the light irradiation location
A method for eliminating defective pixels of a CD imaging device.
構成するシリコンウェーハの格子欠陥により生じたもの
であることを特徴とする請求項１記載のＣＣＤ撮像素子
の欠陥画素解消方法。2. The method according to claim 1, wherein the defective pixel is caused by a lattice defect of a silicon wafer constituting the CCD image sensor.
合にも、光検知信号を出力することを特徴とする請求項
１記載のＣＣＤ撮像素子の欠陥画素解消方法。3. The method according to claim 1, wherein the defective pixel outputs a light detection signal even when light is not incident.
Ｃ〜４００°Ｃの範囲内の温度に上昇させることを特徴
とする請求項１記載のＣＣＤ撮像素子の欠陥画素解消方
法。4. The temperature of the laser light irradiation point is 150 °.
2. The method according to claim 1, wherein the temperature is raised to a temperature within a range of C to 400 [deg.] C.
はマトリクス状に配列されていることを特徴とする請求
項１記載のＣＣＤ撮像素子の欠陥画素解消方法。5. The method according to claim 1, wherein the pixels constituting the CCD image sensor are arranged in a matrix.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9110792A JPH10303405A (en) | 1997-04-28 | 1997-04-28 | Method for eliminating defective pixels on ccd image pick-up device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9110792A JPH10303405A (en) | 1997-04-28 | 1997-04-28 | Method for eliminating defective pixels on ccd image pick-up device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10303405A true JPH10303405A (en) | 1998-11-13 |
Family
ID=14544758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9110792A Pending JPH10303405A (en) | 1997-04-28 | 1997-04-28 | Method for eliminating defective pixels on ccd image pick-up device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10303405A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9142465B1 (en) * | 2013-03-13 | 2015-09-22 | Sandia Corporation | Precise annealing of focal plane arrays for optical detection |
-
1997
- 1997-04-28 JP JP9110792A patent/JPH10303405A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9142465B1 (en) * | 2013-03-13 | 2015-09-22 | Sandia Corporation | Precise annealing of focal plane arrays for optical detection |
| US9793177B2 (en) | 2013-03-13 | 2017-10-17 | National Technology & Engineering Solutions Of Sandia, Llc | Precise annealing of focal plane arrays for optical detection |
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