JPH10303363A - Electronic component and manufacture therefor - Google Patents
Electronic component and manufacture thereforInfo
- Publication number
- JPH10303363A JPH10303363A JP11313897A JP11313897A JPH10303363A JP H10303363 A JPH10303363 A JP H10303363A JP 11313897 A JP11313897 A JP 11313897A JP 11313897 A JP11313897 A JP 11313897A JP H10303363 A JPH10303363 A JP H10303363A
- Authority
- JP
- Japan
- Prior art keywords
- bare chip
- insulating layer
- electrode portion
- electronic component
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000011347 resin Substances 0.000 claims abstract description 43
- 229920005989 resin Polymers 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 229910000679 solder Inorganic materials 0.000 claims description 50
- 239000011810 insulating material Substances 0.000 claims description 48
- 238000007789 sealing Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 abstract 5
- 239000012774 insulation material Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000008646 thermal stress Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 230000002542 deteriorative effect Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- -1 for example Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電子部品及びその
製造方法に関し、例えばマルチチップモジュールといっ
た半導体装置のような電子部品及びその製造方法に適用
して好適なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component and a method of manufacturing the same, and is suitably applied to an electronic component such as a semiconductor device such as a multichip module and a method of manufacturing the same.
【0002】[0002]
【従来の技術】従来より、半導体装置として、多層配線
基板上に複数のベアチップ部品が高密度実装されて全体
が小型化されることにより、各ベアチップ部品間の配線
長を比較的短くし、かくして各ベアチップ部品の高速特
性及び高周波特性等を向上させるようにした、いわゆる
マルチチップモジュールがある。2. Description of the Related Art Conventionally, as a semiconductor device, a plurality of bare chip components are mounted at high density on a multilayer wiring board and the whole is miniaturized, so that the wiring length between the bare chip components is relatively shortened, and thus, There is a so-called multi-chip module in which the high-speed characteristics and high-frequency characteristics of each bare chip component are improved.
【0003】ここで図14に示すように、通常、マルチ
チップモジュール101においては、セラミック基板又
は有機基板等からなる絶縁層と、所定の導体パターンか
らなる配線層とがその厚み方向に順次積層形成されてな
る多層配線基板102(ただし、図14中、絶縁層と配
線層の図示は省略する。)の一主面102a上に、複数
のベアチップ部品103が載置され、各ベアチップ部品
103の回路が形成される回路面103aに形成された
複数の電極部である図示しないパッドと、多層配線基板
102の最上層となる配線層中の各パッドに対応する図
示しないランドとが、はんだよりなる突起電極104
(以下、はんだバンプ104と称する。)を介して電気
的及び物理的に接続されることにより実装されている。As shown in FIG. 14, usually, in a multi-chip module 101, an insulating layer made of a ceramic substrate or an organic substrate and a wiring layer made of a predetermined conductor pattern are sequentially laminated in the thickness direction. A plurality of bare chip components 103 are placed on one main surface 102a of the multilayer wiring board 102 (however, the illustration of the insulating layer and the wiring layer is omitted in FIG. 14). A plurality of pads (not shown), which are a plurality of electrode portions, formed on the circuit surface 103a on which the pattern is formed, and lands (not shown) corresponding to the respective pads in the wiring layer which is the uppermost layer of the multilayer wiring board 102 are formed of solder. Electrode 104
(Hereinafter, referred to as solder bumps 104.) It is mounted by being electrically and physically connected via a solder bump 104.
【0004】ところで、マルチチップモジュール101
においては、多層配線基板102の熱膨張係数が、ベア
チップ部品103の熱膨張係数の2倍以上の値を有する
ため、当該ベアチップ部品103の動作等により発熱し
た場合、多層配線基板102と各ベアチップ部品103
との間の各はんだバンプ104に熱応力が集中して当該
はんだバンプ104を破損させることがある。[0004] Incidentally, the multi-chip module 101
Since the thermal expansion coefficient of the multilayer wiring board 102 is twice or more the thermal expansion coefficient of the bare chip component 103, when the bare chip component 103 generates heat, the multilayer wiring board 102 and each bare chip component 103
In some cases, thermal stress concentrates on each solder bump 104 between them, and the solder bump 104 may be damaged.
【0005】このためこのマルチチップモジュール10
1では、多層配線基板102の一主面102aと各ベア
チップ部品103の回路面103aとの間の隙間に、エ
ポキシ樹脂等よりなる絶縁材(すなわちアンダーフィル
材)105を各はんだバンプ104を埋め込むように充
填している。これによりこのマルチチップモジュール1
01では、絶縁材105により各はんだバンプ104に
生じる熱応力の集中を緩和させ、かくしてはんだバンプ
104の破損を防止し得るようになされている。また絶
縁材105は、各はんだバンプ104の破損の防止に加
えて各ベアチップ部品103のそれぞれの回路面103
aを覆うことにより、当該回路面103aを外気に含ま
れる不純物や水分による故障から保護し得るようになさ
れている。For this reason, the multi-chip module 10
In 1, an insulating material (that is, an underfill material) 105 made of epoxy resin or the like is embedded in each solder bump 104 in a gap between one main surface 102 a of the multilayer wiring board 102 and a circuit surface 103 a of each bare chip component 103. Is filled. Thereby, this multi-chip module 1
In the example No. 01, the concentration of the thermal stress generated in each solder bump 104 is reduced by the insulating material 105, and thus the breakage of the solder bump 104 can be prevented. In addition, the insulating material 105 is used to prevent the solder bumps 104 from being damaged,
By covering a, the circuit surface 103a can be protected from failure due to impurities or moisture contained in the outside air.
【0006】[0006]
【発明が解決しようとする課題】ところで、かかる構成
のマルチマップモジュール101においては、近年、多
層配線基板102の一主面102aに各ベアチップ部品
103をさらに高密度に実装するようにして、当該マル
チチップモジュール101をさらに小型化することが要
求されている。Incidentally, in the multi-map module 101 having such a configuration, in recent years, each bare chip component 103 is mounted on the one main surface 102a of the multilayer wiring board 102 at a higher density, so that the multi-map module 101 has a higher density. There is a demand for further miniaturization of the chip module 101.
【0007】ところが、このようなマルチチップモジュ
ール101において、各ベアチップ部品103間の間隔
がある程度以上狭くなると、多層配線基板102の一主
面102aと、各ベアチップ部品103の回路面103
aとの間の隙間に絶縁材105を充填するのが困難とな
り、当該絶縁材105によって各はんだバンプ104の
破損を防止し難くなると共に、各ベアチップ部品103
の回路面103aを保護し難くなる問題が生じる。した
がって、各ベアチップ部品103をさらに高密度に実装
してマルチチップモジュール101をさらに小型化しよ
うとした場合には、当該マルチチップモジュール101
の品質及び信頼性が著しく低下してしまい、小型化は困
難であった。However, in such a multi-chip module 101, when the interval between the bare chip components 103 is reduced to a certain extent or more, one main surface 102a of the multilayer wiring board 102 and the circuit surface 103 of each bare chip component 103
a, it is difficult to fill the gap between the solder bumps 104 with the insulating material 105, and it is difficult to prevent the solder bumps 104 from being damaged by the insulating material 105.
This makes it difficult to protect the circuit surface 103a. Therefore, when it is attempted to further reduce the size of the multi-chip module 101 by mounting each bare chip component 103 at a higher density,
The quality and reliability of the device have been significantly reduced, and miniaturization has been difficult.
【0008】また、このマルチチップモジュール101
では、多層配線基板102の一主面102aに実装され
るベアチップ部品103の数が増加した場合、各ベアチ
ップ部品103の動作による発熱量も増加し、多層配線
基板102とベアチップ部品103との熱膨張係数の違
いに起因して各はんだバンプ104に集中して発生する
熱応力を前述のように絶縁材105だけで緩和させるの
が困難となる。したがってこのような場合には、絶縁材
105に加えて各はんだバンプ104の大きさを比較的
大きくすることにより、各はんだバンプ104に集中す
る熱応力を緩和する方法が考えられる。The multi-chip module 101
When the number of bare chip components 103 mounted on one main surface 102a of the multilayer wiring board 102 increases, the amount of heat generated by the operation of each bare chip component 103 also increases, and the thermal expansion between the multilayer wiring board 102 and the bare chip component 103 increases. As described above, it is difficult to alleviate the thermal stress generated in each of the solder bumps 104 due to the difference in the coefficient by the insulating material 105 alone. Therefore, in such a case, it is conceivable to reduce the thermal stress concentrated on each solder bump 104 by making the size of each solder bump 104 relatively large in addition to the insulating material 105.
【0009】ところがこのような場合には、はんだバン
プ104の大きさに応じて多層配線基板102のランド
を大きくする必要があり、多層配線基板102が大きく
なる問題があった。すなわち多層配線基板102が大き
くなることにより、マルチチップモジュール101全体
も大型化してしまい、この点からも小型化への対応は困
難であった。However, in such a case, it is necessary to enlarge the land of the multilayer wiring board 102 in accordance with the size of the solder bump 104, and there is a problem that the multilayer wiring board 102 becomes large. That is, as the multi-layer wiring board 102 becomes larger, the entire multi-chip module 101 also becomes larger, which makes it difficult to cope with downsizing.
【0010】さらに、このマルチチップモジュール10
1では、多層配線基板102の一主面102aに実装さ
れる各ベアチップ部品103のパッド数が比較的多い場
合、これに応じて多層配線基板102のランドに電気的
に接続される配線の本数も比較的多くなり、当該多層配
線基板102の配線層の層数を増加させる必要がある。Further, the multi-chip module 10
In No. 1, when the number of pads of each bare chip component 103 mounted on one main surface 102a of the multilayer wiring board 102 is relatively large, the number of wirings electrically connected to the lands of the multilayer wiring board 102 is correspondingly increased. This is relatively large, and it is necessary to increase the number of wiring layers of the multilayer wiring board 102.
【0011】ところが、多層配線基板102において
は、絶縁層の一層当たりの厚さを通常0.1(mm)程
度としていること、配線層の増加と共に絶縁層も増加す
ることから、上記のように配線層の層数を増加させる
と、当該多層配線基板102がその厚み方向に比較的厚
くなってしまい、この点からも小型化への対応が困難で
あった。However, in the multilayer wiring board 102, since the thickness of one insulating layer is usually about 0.1 (mm) and the number of insulating layers increases as the number of wiring layers increases, as described above, When the number of wiring layers is increased, the multilayer wiring board 102 becomes relatively thick in the thickness direction, and it is difficult to cope with miniaturization from this point as well.
【0012】また、このマルチチップモジュール101
では、多層配線基板102の一主面102aに実装され
るベアチップ部品103の数が増加した場合、各ベアチ
ップ部品103の動作により発生する熱を効率良く放熱
させる手段が講じにくいという問題もあり、小型化を妨
げる要因となっていた。Also, the multi-chip module 101
Therefore, when the number of bare chip components 103 mounted on one main surface 102a of the multilayer wiring board 102 increases, there is a problem that it is difficult to efficiently dissipate the heat generated by the operation of each bare chip component 103. It was a factor that hindered the conversion.
【0013】そこで本発明は、従来の実状を鑑みて提案
されたものであり、容易に小型化し得る電子部品及びそ
の製造方法を提供することを目的とするものである。Accordingly, the present invention has been proposed in view of the actual situation in the related art, and has as its object to provide an electronic component which can be easily reduced in size and a method for manufacturing the same.
【0014】[0014]
【課題を解決するための手段】上述の目的を達成するた
めに本発明の電子部品は、一主面に電極部を有する電極
部分を含む回路が形成されて回路面とされている複数の
ベアチップ部品が、これら回路面が一面を形成するよう
に配置され、これらベアチップ部品が電極部分のみが露
呈するように絶縁材により封止されており、ベアチップ
部品の回路面側に複数の配線層が絶縁層を介して積層形
成されてなることを特徴とするものである。In order to achieve the above object, an electronic component according to the present invention comprises a plurality of bare chips having a circuit surface formed with a circuit including an electrode portion having an electrode portion on one principal surface. The components are arranged so that these circuit surfaces form one surface, and these bare chip components are sealed with an insulating material so that only the electrode portions are exposed, and a plurality of wiring layers are insulated on the circuit surface side of the bare chip components. It is characterized by being formed by lamination through layers.
【0015】上記本発明の電子部品においては、絶縁層
を感光性樹脂により形成し、ベアチップ部品の回路面上
に絶縁層を形成し、この上に複数層の配線層を絶縁層を
介して積層形成して、いわゆるビルドアップ基板と同様
にして絶縁層と配線層を形成するようにし、上記絶縁層
の所定の位置に内部に導電材料が配された孔部を形成
し、この孔部により、いわゆるスルーホールやバイアホ
ールのようにして絶縁層を介して積層される電極部分と
配線層間及び配線層同士を電気的に接続することが好ま
しい。In the above electronic component of the present invention, the insulating layer is formed of a photosensitive resin, the insulating layer is formed on the circuit surface of the bare chip component, and a plurality of wiring layers are laminated on the insulating layer via the insulating layer. Forming, so as to form an insulating layer and a wiring layer in the same manner as a so-called build-up substrate, forming a hole in which a conductive material is disposed in a predetermined position of the insulating layer, by this hole, It is preferable to electrically connect the electrode portion, which is laminated via an insulating layer like a so-called through hole or via hole, to the wiring layers and the wiring layers.
【0016】さらに、上記本発明の電子部品において
は、ベアチップ部品の回路面とは反対側となる主面側に
放熱手段が設けられていることが好ましい。そして、放
熱手段としてベアチップ部品の回路面とは反対側となる
主面に接する金属板を配する、或いは複数個のベアチッ
プ部品を封止する絶縁材を覆うようなカバー部材を設
け、ベアチップ部品の回路面とは反対側となる主面にカ
バー部材の一部が接するようにして放熱手段とすれば良
い。Further, in the electronic component of the present invention, it is preferable that a heat radiating means is provided on a main surface side opposite to a circuit surface of the bare chip component. And, as a heat radiating means, a metal plate in contact with the main surface opposite to the circuit surface of the bare chip component is provided, or a cover member that covers an insulating material that seals a plurality of bare chip components is provided, and a bare chip component is provided. The heat dissipating means may be provided so that a part of the cover member contacts the main surface opposite to the circuit surface.
【0017】また、上記本発明の電子部品においては、
チップ部品の電極部上にはんだバンプが形成されていて
も良く、これを製造する場合には、回路面の電極部上に
はんだバンプが形成された複数のベアチップ部品を、こ
れら回路面が一面を形成するように配置し、絶縁材でこ
れらベアチップ部品を覆うように封止し、ベアチップ部
品の回路面側の樹脂を除去してはんだバンプを露呈させ
た後、ベアチップ部品の回路面側に、感光性樹脂よりな
り、電極部に対応する位置に内部に導電材料が配された
孔部を有する絶縁層を形成し、この上にいわゆるビルド
アップ基板と同様にして複数の配線層を絶縁層を介して
積層形成することが好ましい。In the electronic component of the present invention,
Solder bumps may be formed on the electrode parts of the chip parts.When manufacturing the same, a plurality of bare chip parts having the solder bumps formed on the electrode parts of the circuit surface are formed, and these circuit surfaces are formed on one surface. The bare chip component is sealed so as to cover the bare chip component with an insulating material, and the resin on the circuit surface side of the bare chip component is removed to expose the solder bumps. An insulating layer made of conductive resin and having a hole in which a conductive material is disposed at a position corresponding to the electrode portion, and a plurality of wiring layers are formed on the insulating layer via the insulating layer in the same manner as a so-called build-up substrate. It is preferable to form a laminate.
【0018】さらに、本発明の電子部品においては、チ
ップ部品の電極部が回路よりも凸となされていても良
く、これを製造する場合には、凸部とされる電極部表面
を接触面として複数のベアチップ部品を板材上に配置
し、絶縁材でこれらベアチップ部品を覆うように封止
し、板材を除去し、電極部表面を露呈させた後、ベアチ
ップ部品の回路面側に、感光性樹脂よりなり、電極部に
対応する位置に内部に導電材料が配された孔部を有する
絶縁層を形成し、この上にいわゆるビルドアップ基板と
同様にして複数の配線層を絶縁層を介して積層形成する
ことが好ましい。Further, in the electronic component of the present invention, the electrode portion of the chip component may be made more convex than the circuit. In the case of manufacturing this, the surface of the electrode portion which is made to be a convex portion is used as a contact surface. After arranging a plurality of bare chip components on a plate, sealing the bare chip components with an insulating material, removing the plate material, exposing the surface of the electrode portion, the photosensitive resin is placed on the circuit surface side of the bare chip components. An insulating layer having a hole in which a conductive material is disposed is formed at a position corresponding to the electrode portion, and a plurality of wiring layers are stacked on the insulating layer via the insulating layer in the same manner as a so-called build-up substrate. Preferably, it is formed.
【0019】本発明の電子部品においては、複数のベア
チップ部品をそれぞれの回路面が一面を形成するように
配置し、これらベアチップ部品を電極部分のみが露呈す
るように絶縁材により封止しているため、ベアチップ部
品の電極部分以外は絶縁材により確実に覆われることと
なり、このベアチップ部品の回路面側に複数の配線層を
絶縁層を介して積層形成するようにしているため、ベア
チップ部品を高密度に実装してもベアチップ部品の回路
面と配線部間に樹脂が充填され、回路面が保護される。In the electronic component of the present invention, a plurality of bare chip components are arranged so that each circuit surface forms one surface, and these bare chip components are sealed with an insulating material so that only the electrode portions are exposed. Therefore, portions other than the electrode portion of the bare chip component are surely covered with the insulating material, and a plurality of wiring layers are laminated and formed on the circuit surface side of the bare chip component via the insulating layer. Even when mounted at a high density, resin is filled between the circuit surface of the bare chip component and the wiring portion, and the circuit surface is protected.
【0020】さらに、上記本発明の電子部品において、
絶縁層を感光性樹脂により形成し、ベアチップ部品の回
路面上に絶縁層を形成し、この上に複数層の配線層を絶
縁層を介して積層形成して、いわゆるビルドアップ基板
と同様にして絶縁層と配線層を形成するようにし、上記
絶縁層の所定の位置に内部に導電材料が配された孔部を
形成し、この孔部により、いわゆるスルーホールやバイ
アホールのようにして絶縁層を介して積層される電極部
と配線層間及び配線層同士を電気的に接続するようにす
れば、配線層が比較的高密度とされ、配線部の小型化が
なされ、絶縁層が比較的薄型とされ、配線部の薄型化が
なされる。Further, in the electronic component of the present invention,
An insulating layer is formed of a photosensitive resin, an insulating layer is formed on a circuit surface of a bare chip component, and a plurality of wiring layers are formed on the insulating layer via an insulating layer, in the same manner as a so-called build-up board. An insulating layer and a wiring layer are formed, and a hole in which a conductive material is disposed is formed at a predetermined position of the insulating layer. The hole forms an insulating layer such as a so-called through hole or via hole. By electrically connecting the electrode portions and the wiring layers and the wiring layers laminated via the wiring layer, the wiring layers have a relatively high density, the wiring portions can be downsized, and the insulating layers can be relatively thin. Thus, the thickness of the wiring portion is reduced.
【0021】また、上記本発明の電子部品において、放
熱手段としてベアチップ部品の回路面とは反対側となる
主面に接する金属板を配するようにすれば、電子部品の
動作により生じる熱が効率良く放熱される。In the electronic component of the present invention, if a metal plate is provided as a heat radiating means, which is in contact with the main surface opposite to the circuit surface of the bare chip component, the heat generated by the operation of the electronic component can be efficiently used. Dissipates heat well.
【0022】さらにまた、複数個のベアチップ部品を封
止する絶縁材を覆うようなカバー部材を設け、ベアチッ
プ部品の回路面とは反対側となる主面にカバー部材の一
部が接するようにして放熱手段とすれば、最終的な形状
の小型化もなされる。Further, a cover member is provided so as to cover an insulating material for sealing the plurality of bare chip components, and a part of the cover member is in contact with a main surface of the bare chip component opposite to the circuit surface. If the heat radiating means is used, the final shape can be reduced in size.
【0023】[0023]
【発明の実施の形態】以下、本発明の具体的な実施の形
態について図面を参照しながら詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings.
【0024】本例の電子部品は、図1に示すようなマル
チチップモジュールである電子部品10であり、一主面
1aが図示しない電極部を有する電極部分を含む回路が
形成される面となされる複数のベアチップ部品1が上記
一主面1a(以下、回路面1aと称する。)が一面を形
成するように配置され、これらベアチップ部品1が絶縁
材3により封止されてなり、これらベアチップ部品1の
回路面1a側に複数の配線層5が絶縁層4を介して積層
される配線部6が配置されてなるものである。The electronic component of this embodiment is an electronic component 10 which is a multi-chip module as shown in FIG. 1, and one main surface 1a is a surface on which a circuit including an electrode portion having an electrode portion (not shown) is formed. A plurality of bare chip components 1 are arranged such that the one main surface 1a (hereinafter, referred to as a circuit surface 1a) forms one surface, and the bare chip components 1 are sealed with an insulating material 3 to form the bare chip components. A wiring section 6 in which a plurality of wiring layers 5 are stacked via an insulating layer 4 is arranged on one circuit surface 1a side.
【0025】上記ベアチップ部品1の回路面1a上の図
示しない回路の電極部上にはそれぞれはんだバンプ2が
設けられており、上記絶縁材3はベアチップ部品1の回
路面1aを覆い、はんだバンプ2の上端部のみ(すなわ
ち電極部分のみ)をそれぞれ露出させるようにして封止
している。なお、上記絶縁材3は例えばエポキシ樹脂等
の樹脂よりなる。すなわち、本例の電子部品10におい
ては、ベアチップ部品1の電極部分以外は絶縁材3によ
り確実に覆われている。A solder bump 2 is provided on each of the electrode portions of the circuit (not shown) on the circuit surface 1a of the bare chip component 1, and the insulating material 3 covers the circuit surface 1a of the bare chip component 1, Is sealed so that only the upper end portion (i.e., only the electrode portion) is exposed. The insulating material 3 is made of, for example, a resin such as an epoxy resin. That is, in the electronic component 10 of the present example, portions other than the electrode portions of the bare chip component 1 are surely covered with the insulating material 3.
【0026】また、上記配線部6においては、ベアチッ
プ部品1の回路面1a上に最下層となる絶縁層4が形成
されており、この上に最下層となる配線層5が形成さ
れ、この上にまた絶縁層4を介して配線層5が積層形成
されており、最上層は絶縁層4とされ、都合2層の配線
層5が形成されている。上記絶縁層4は感光性樹脂より
なり、絶縁層4及び配線層5はいわゆるビルドアップ基
板と同様にして形成されている。In the wiring portion 6, the lowermost insulating layer 4 is formed on the circuit surface 1a of the bare chip component 1, and the lowermost wiring layer 5 is formed thereon. In addition, a wiring layer 5 is laminated and formed with an insulating layer 4 interposed therebetween. The uppermost layer is the insulating layer 4, and two wiring layers 5 are conveniently formed. The insulating layer 4 is made of a photosensitive resin, and the insulating layer 4 and the wiring layer 5 are formed in the same manner as a so-called build-up substrate.
【0027】本例の電子部品10においては、上述のよ
うに、ベアチップ部品1の電極部分以外が絶縁材3によ
り確実に覆われていることから、上記のようにベアチッ
プ部品1の回路面1a側に複数の配線層5を絶縁層4を
介して積層形成しても、ベアチップ部品1の回路面1a
と配線部6間に樹脂が充填され、回路面1aが保護され
る。このことはベアチップ部品1を高密度に実装しても
同様である。In the electronic component 10 of the present embodiment, as described above, the portions other than the electrode portions of the bare chip component 1 are surely covered with the insulating material 3. Even if a plurality of wiring layers 5 are laminated via the insulating layer 4, the circuit surface 1a of the bare chip
And the wiring portion 6 is filled with resin to protect the circuit surface 1a. This is the same even if the bare chip component 1 is mounted at a high density.
【0028】そして、上記配線部6においては、最下層
となる絶縁層4に所定のはんだバンプ2にそれぞれ対応
し、内部に導電材料が配される貫通孔であるバイアホー
ル7が形成されており、はんだバンプ2と最下層となる
配線層5が電気的に接続されている。さらには、他の絶
縁層4の所定の位置にもバイアホール7が形成されてお
り、異なる配線層5間、或いははんだバンプ7と最下層
ではない配線層5間が電気的に接続されている。In the wiring portion 6, via holes 7 are formed in the lowermost insulating layer 4 so as to correspond to the predetermined solder bumps 2 and to be through holes in which a conductive material is disposed. The solder bumps 2 are electrically connected to the lowermost wiring layer 5. Further, via holes 7 are also formed at predetermined positions of the other insulating layer 4, and electrically connect between different wiring layers 5 or between the solder bumps 7 and the wiring layer 5 which is not the lowermost layer. .
【0029】すなわち、本例の電子部品10において
は、配線層5が比較的高密度とされ、配線部6の小型化
がなされ、絶縁層4が比較的薄型とされ、配線部6の薄
型化がなされる。That is, in the electronic component 10 of the present embodiment, the wiring layer 5 has a relatively high density, the wiring portion 6 has a small size, the insulating layer 4 has a relatively small thickness, and the wiring portion 6 has a small thickness. Is made.
【0030】なお、最上層となる配線層5においては、
その一端5a側に導体パターンの端部であり、外部との
接続部となる複数の外部端子5b(図1中には1箇所の
みを示す。)が形成されており、最上層となる絶縁層4
は各外部端子5bを露出させるように最上層となる配線
層5上に積層形成されている。In the wiring layer 5 which is the uppermost layer,
On one end 5a side, a plurality of external terminals 5b (only one is shown in FIG. 1) which are end portions of the conductor pattern and serve as connection portions with the outside are formed, and an insulating layer which is an uppermost layer 4
Are formed on the uppermost wiring layer 5 so as to expose each external terminal 5b.
【0031】すなわち、本例の電子部品10において
は、各外部端子5bがそれぞれ図示しないマザーボード
の対応する電極に電気的に接続されることにより、各ベ
アチップ部品1においては、それぞれ対応するはんだバ
ンプ2と、配線層5と、バイアホール7と、外部端子5
bとを順次介してマザーボードからの信号が入力され、
又は信号を出力し得るようになされている。That is, in the electronic component 10 of the present embodiment, each external terminal 5b is electrically connected to the corresponding electrode of the mother board (not shown), so that in each bare chip component 1, the corresponding solder bump 2 , Wiring layer 5, via hole 7, external terminal 5
b, a signal from the motherboard is sequentially input through
Alternatively, a signal can be output.
【0032】また、本例の電子部品10においては、各
外部端子5bに図示しない検査装置の図示しないプロー
ブを接触させることにより、各外部端子5bにそれぞれ
対応する配線層5及びバイアホール7の断線の有無や、
はんだバンプ2の破損の有無、さらにはベアチップ部品
1の故障の有無等を容易に検査し得るようになされてい
る。Further, in the electronic component 10 of the present embodiment, a disconnection of the wiring layer 5 and the via hole 7 corresponding to each external terminal 5b is achieved by bringing a probe (not shown) of an inspection device (not shown) into contact with each external terminal 5b. Or not,
It is possible to easily inspect whether the solder bumps 2 are damaged or not, and whether or not the bare chip components 1 are faulty.
【0033】さらに、本例の電子部品10においては、
ベアチップ部品1の回路面1aと反対側の主面1bと接
するように金属板8が接合材9を介して設けられてお
り、ベアチップ部品1の動作により発生する熱を効率良
く放熱でき得るようになされている。Further, in the electronic component 10 of the present embodiment,
A metal plate 8 is provided via a bonding material 9 so as to be in contact with a main surface 1b opposite to the circuit surface 1a of the bare chip component 1 so that heat generated by the operation of the bare chip component 1 can be efficiently radiated. It has been done.
【0034】すなわち、本例の電子部品10において
は、ベアチップ部品1の電極部分以外が絶縁材3により
確実に覆われていることから、ベアチップ部品1を高密
度に実装してもベアチップ部品1の回路面1aと配線部
6間に樹脂が充填され、回路面1aが保護され、品質及
び信頼性を損なうことなく、ベアチップ部品1を高密度
に実装して小型化を図ることが可能である。なお、本例
の電子部品10においては、はんだバンプ2の上端部の
みが露呈するように絶縁材3により封止されていること
からはんだバンプ2の損傷も防止される。That is, in the electronic component 10 of this embodiment, since the portions other than the electrode portions of the bare chip component 1 are securely covered with the insulating material 3, even if the bare chip component 1 is mounted at a high density, A resin is filled between the circuit surface 1a and the wiring portion 6, the circuit surface 1a is protected, and the bare chip component 1 can be mounted at high density to reduce the size without deteriorating quality and reliability. In the electronic component 10 of the present embodiment, the solder bumps 2 are also prevented from being damaged because the upper ends of the solder bumps 2 are sealed with the insulating material 3 so as to be exposed.
【0035】また、本例の電子部品10においては、絶
縁層4及び配線層5をビルドアップ基板と同様にして形
成していることから、配線層5が比較的高密度とされ、
配線部6の小型化がなされ、絶縁層4が比較的薄型とさ
れ、配線部6の薄型化がなされ、小型化に対応可能であ
る。すなわち、上記のようにして絶縁層4を形成する場
合、その厚さは20(μm)〜30(μm)程度であ
り、多層としても従来使用されていた多層配線基板と比
較して遙かに薄型化が可能である。In the electronic component 10 of this embodiment, since the insulating layer 4 and the wiring layer 5 are formed in the same manner as the build-up substrate, the wiring layer 5 has a relatively high density.
The size of the wiring portion 6 is reduced, the insulating layer 4 is made relatively thin, and the thickness of the wiring portion 6 is reduced, so that the size can be reduced. That is, when the insulating layer 4 is formed as described above, the thickness thereof is about 20 (μm) to 30 (μm), and the thickness of the insulating layer 4 is far more than that of a conventionally used multilayer wiring board. Thinning is possible.
【0036】さらに、本例の電子部品10においては、
絶縁層4として比較的熱膨張係数が低い感光性樹脂を使
用していることから、ベアチップ部品1の数を多くした
場合においても配線部6とベアチップ部品1との熱膨張
係数の違いに起因する熱応力が発生し難く、はんだバン
プ2を大きくせずにはんだバンプ2に集中する熱応力を
絶縁材3だけで緩和することが可能である。Further, in the electronic component 10 of this embodiment,
Since a photosensitive resin having a relatively low coefficient of thermal expansion is used as the insulating layer 4, even when the number of bare chip components 1 is increased, the difference is caused by a difference in the coefficient of thermal expansion between the wiring portion 6 and the bare chip component 1. Thermal stress is hardly generated, and the thermal stress concentrated on the solder bump 2 can be reduced by the insulating material 3 alone without increasing the size of the solder bump 2.
【0037】さらにまた、本例の電子部品10において
は、ベアチップ部品1の主面1bと接するように金属板
8を配していることから、ベアチップ部品1の動作によ
り発生する熱を効率良く放熱でき得るようになされてお
り、小型化に対応可能である。Furthermore, in the electronic component 10 of the present embodiment, since the metal plate 8 is disposed so as to be in contact with the main surface 1b of the bare chip component 1, the heat generated by the operation of the bare chip component 1 is efficiently radiated. It is made possible, and can be reduced in size.
【0038】次に、上述した電子部品の製造方法につい
て述べる。すなわち、先ず図2に示すように、各ベアチ
ップ部品1のそれぞれの回路面1aに形成された図示し
ない複数の電極部上に、それぞれはんだバンプ2を形成
する。この後、各ベアチップ部品1をそれぞれ回路面1
aが上方を向きかつ一面を形成するように金属板8に所
定状態に配置して接合剤9により接着する。Next, a method for manufacturing the above-described electronic component will be described. That is, first, as shown in FIG. 2, the solder bumps 2 are respectively formed on a plurality of electrode portions (not shown) formed on each circuit surface 1a of each bare chip component 1. Thereafter, each bare chip component 1 is connected to the circuit surface 1 respectively.
The metal plate 8 is arranged in a predetermined state such that a faces upward and forms one surface, and is adhered by a bonding agent 9.
【0039】次に、図3に示すように、図示しない所定
のモールド成形装置を用いて各ベアチップ部品1と、各
はんだバンプ2とを埋め込むような形状に例えばエポキ
シ樹脂等の樹脂である絶縁材3を充填してモールドシー
ト13として成形を行い、これらベアチップ部品1を封
止する。このようにすれば、各ベアチップ部品1間の間
隔に係わらずに当該ベアチップ部品1を絶縁材3により
確実に固定できると共に回路面1aを絶縁材3により確
実に覆うことができ、ベアチップ部品1の回路面1aを
外気に含まれる不純物及び水分から保護することが可能
となる。したがって各ベアチップ部品1の間隔を、特性
を損なうことなく前述の従来のマルチチップモジュール
のような電子部品におけるベアチップ部品間の間隔より
も格段に狭くし得る。すなわち、ベアチップ部品1を高
密度に実装することが可能となり、このようにして製造
される電子部品においては、品質及び信頼性を低下させ
ることなく小型化が可能となる。Next, as shown in FIG. 3, an insulating material such as a resin such as epoxy resin is used to embed each bare chip part 1 and each solder bump 2 by using a predetermined molding apparatus (not shown). 3 and molded as a mold sheet 13 to seal the bare chip components 1. In this way, the bare chip component 1 can be securely fixed by the insulating material 3 and the circuit surface 1a can be reliably covered by the insulating material 3 irrespective of the interval between the bare chip components 1. The circuit surface 1a can be protected from impurities and moisture contained in the outside air. Therefore, the interval between the bare chip components 1 can be significantly narrower than the interval between the bare chip components in an electronic component such as the above-described conventional multi-chip module without deteriorating the characteristics. That is, the bare chip component 1 can be mounted at a high density, and the electronic component manufactured in this manner can be reduced in size without deteriorating quality and reliability.
【0040】次いで、図4に示すように、各はんだバン
プ2の高さがそれぞれ一様に所定高さとなるように、ベ
アチップ部品1の回路面1a側となるモールドシート1
3の上面13a側を図示しない所定の研磨機によって研
磨して除去し、各はんだバンプ2の上部を露出させる。
かくして、各ベアチップ部品1が、回路面1aが覆われ
ると共に各はんだバンプ2の上部が露出されるように絶
縁材3によって一体に封止され、かつ金属板8が取り付
けられたモールドシート13が形成されることとなる。Next, as shown in FIG. 4, the mold sheet 1 on the circuit surface 1a side of the bare chip component 1 is so arranged that the height of each solder bump 2 is uniformly equal to a predetermined height.
3 is polished and removed by a predetermined polishing machine (not shown) to expose an upper portion of each solder bump 2.
Thus, each bare chip component 1 is integrally sealed with the insulating material 3 so that the circuit surface 1a is covered and the upper part of each solder bump 2 is exposed, and the mold sheet 13 to which the metal plate 8 is attached is formed. Will be done.
【0041】続いて上記モールドシート13上に配線部
6を形成する。すなわち、モールドシート13のはんだ
バンプ2が露呈する上面13aに感光性樹脂である例え
ばポリイミドを滴下又は塗布する。そして、スピンコー
トを行い、感光性樹脂を例えば30(μm)〜50(μ
m)の厚さとなるように広げる。Subsequently, the wiring section 6 is formed on the mold sheet 13. That is, a photosensitive resin, for example, polyimide, is dropped or applied to the upper surface 13a of the mold sheet 13 where the solder bumps 2 are exposed. Then, spin coating is performed, and the photosensitive resin is, for example, 30 (μm) to 50 (μm).
m).
【0042】次に、このモールドシート13を、内部が
所定温度に維持された図示しない所定の加熱炉内に入れ
て所定時間加熱することにより、感光性樹脂を硬化させ
る。さらに、この後、当該硬化した感光性樹脂の所定の
はんだバンプ2にそれぞれ対応する所定位置に、所定の
フォトプロセスにより図5に示すように所定径を有する
貫通孔7aを形成することにより、モールドシート13
の上面13a上に感光性樹脂からなり、最下層となる絶
縁層4を形成する。Next, the photosensitive resin is cured by placing the mold sheet 13 in a predetermined heating furnace (not shown) in which the inside is maintained at a predetermined temperature and heating for a predetermined time. Thereafter, through holes 7a having a predetermined diameter are formed at predetermined positions corresponding to the predetermined solder bumps 2 of the cured photosensitive resin by a predetermined photo process, as shown in FIG. Sheet 13
An insulating layer 4 made of a photosensitive resin and serving as a lowermost layer is formed on the upper surface 13a of the substrate.
【0043】さらに、図示しない所定のスパッタ装置を
用いて絶縁層4上及び各貫通孔7aの内周面上にそれぞ
れ銅をスパッタリングして、絶縁層4上に所定の厚みを
有する銅薄膜を積層形成すると共に複数のバイアホール
7を形成する。この後、銅薄膜をフォトプロセスにより
パターニングして図6中に示すように最下層となる絶縁
層4上にそれぞれ対応するバイアホール7と導通接続さ
れた導体パターンからなる最下層となる配線層5を形成
する。Further, copper is sputtered on the insulating layer 4 and on the inner peripheral surface of each through hole 7a using a predetermined sputtering device (not shown), and a copper thin film having a predetermined thickness is laminated on the insulating layer 4. At the same time, a plurality of via holes 7 are formed. Thereafter, the copper thin film is patterned by a photo process, and as shown in FIG. 6, the lowermost wiring layer 5 made of a conductor pattern electrically connected to the corresponding via hole 7 on the lowermost insulating layer 4 as shown in FIG. To form
【0044】これによりベアチップ部品1の各電極部
が、それぞれ対応するはんだバンプ2と、バイアホール
7とを順次介して対応する配線層5に導通接続される。Thus, each electrode portion of the bare chip component 1 is electrically connected to the corresponding wiring layer 5 via the corresponding solder bump 2 and via hole 7 sequentially.
【0045】さらに、同様にして図6中に示すように最
下層となる配線層5上に絶縁層4を介して最上層となる
配線層5を形成する。Further, similarly, as shown in FIG. 6, the uppermost wiring layer 5 is formed on the lowermost wiring layer 5 via the insulating layer 4.
【0046】なお、このとき、最上層となる配線層5を
一端5aに外部端子5bを有するものとすることは言う
までもなく、配線層5間に挟まれる絶縁層4にもバイア
ホール7を形成し、配線層5間を電気的に接続するよう
にすることも言うまでもない。At this time, needless to say, the uppermost wiring layer 5 has the external terminal 5b at one end 5a, and the via hole 7 is also formed in the insulating layer 4 interposed between the wiring layers 5. Needless to say, the wiring layers 5 are electrically connected.
【0047】さらに、最上層となる配線層5上に、感光
性樹脂である例えばポリイミドを滴下又は塗布した後ス
ピンコートして当該配線層5を感光性樹脂で覆う。次い
でモールドシート13を図示しない所定の加熱炉内に入
れて所定時間加熱することにより、感光性樹脂を硬化さ
せ、かくして最上層となる配線層5上に最上層となる絶
縁層4を積層形成する。この後、最上層となる配線層5
上に積層形成した最上層となる絶縁層4の所定の一端側
を、所定のフォトプロセスにより所定幅を有するように
剥離する。これにより最上層となる配線層5の各外部端
子5bを露出させる。かくして絶縁層4と、配線層5と
が順次交互に積層形成されてなる配線部6をモールドシ
ート13上に形成して電子部品を完成する。Further, a photosensitive resin such as polyimide is dropped or applied onto the wiring layer 5 as the uppermost layer, and then spin-coated to cover the wiring layer 5 with the photosensitive resin. Next, the mold sheet 13 is placed in a predetermined heating furnace (not shown) and heated for a predetermined time to cure the photosensitive resin, thereby forming the uppermost insulating layer 4 on the uppermost wiring layer 5. . After that, the wiring layer 5 serving as the uppermost layer
A predetermined one end side of the uppermost insulating layer 4 formed by lamination is separated by a predetermined photo process so as to have a predetermined width. As a result, each external terminal 5b of the wiring layer 5, which is the uppermost layer, is exposed. In this way, the wiring portion 6 in which the insulating layer 4 and the wiring layer 5 are sequentially and alternately laminated is formed on the mold sheet 13 to complete the electronic component.
【0048】本例においては、配線層5を銅薄膜を所定
のフォトプロセスにより加工して形成するようにしてい
ることから、各配線層5のパターンは線幅及び線間が2
0(μm)〜30(μm)程度のパターンとなり、従来
のマルチチップモジュール等の電子部品の配線層よりも
高密度な配線層を形成することが可能であり、配線部6
を小型化することが可能となり、製造される電子部品の
小型化が可能となる。In this embodiment, since the wiring layer 5 is formed by processing a copper thin film by a predetermined photo process, the pattern of each wiring layer 5 has a line width and a line interval of 2 mm.
The pattern becomes about 0 (μm) to about 30 (μm), and it is possible to form a wiring layer having a higher density than a wiring layer of a conventional electronic component such as a multichip module.
Can be reduced in size, and the electronic components to be manufactured can be reduced in size.
【0049】さらに、本例においては、絶縁層4の一層
当たりの厚みを30(μm)〜50(μm)程度として
おり、従来のマルチチップモジュール等の電子部品の絶
縁層よりも大幅に薄い絶縁層を形成することが可能であ
り、配線部6を薄型化することが可能となり、製造され
る電子部品の小型化及び軽量化が可能となる。Further, in this embodiment, the thickness of one layer of the insulating layer 4 is about 30 (.mu.m) to 50 (.mu.m), which is much thinner than the insulating layer of a conventional electronic component such as a multichip module. A layer can be formed, the wiring portion 6 can be reduced in thickness, and the manufactured electronic component can be reduced in size and weight.
【0050】また、本例においては、従来のマルチチッ
プモジュール等の電子部品の多層配線基板に使用される
絶縁基板又は有機基板等である絶縁層に比べて、比較的
熱膨張係数の低いポリイミド樹脂等により絶縁層4を形
成するようにしており、従来のマルチチップモジュール
等の電子部品に実装されるベアチップ部品の数に比べ
て、格段に多いベアチップ部品1を実装するようにして
も、各はんだバンプ2の大きさを大きくせずに各はんだ
バンプ2に集中する熱応力を絶縁材3だけで緩和させ
て、各はんだバンプ2の破損を防止することができる。Further, in this embodiment, a polyimide resin having a relatively low coefficient of thermal expansion as compared with an insulating layer used as a conventional multi-layer wiring board for electronic components such as a multi-chip module or an organic substrate. The insulating layer 4 is formed by the above-described method. Even if the number of bare chip components 1 is significantly increased as compared with the number of bare chip components mounted on electronic components such as a conventional multi-chip module, each solder The thermal stress concentrated on each solder bump 2 can be reduced only by the insulating material 3 without increasing the size of the bump 2, so that the damage of each solder bump 2 can be prevented.
【0051】本発明を適用した電子部品としては、図7
に示すようなものも挙げられる。この電子部品20は前
述の電子部品10と略同様の構成を有するものである。
そこで、図7中においては、図1と同様の構成を有する
部分については同一符号を付して説明を省略することと
する。As an electronic component to which the present invention is applied, FIG.
And the like. The electronic component 20 has substantially the same configuration as the electronic component 10 described above.
Therefore, in FIG. 7, portions having the same configuration as in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.
【0052】本例の電子部品20と前述の電子部品10
において大きく異なる点は、ベアチップ部品21の回路
面21aの電極部上にはんだバンプが形成されていない
点である。すなわち、各ベアチップ部品21は回路面2
1aの電極部22の上面22aのみが(電極部分のみ
が)露呈するように絶縁材3により封止されている。な
お、この電極部22は回路面21aに形成される図示し
ない回路よりも凸となされている。The electronic component 20 of this embodiment and the electronic component 10 described above
Is that solder bumps are not formed on the electrode portions of the circuit surface 21a of the bare chip component 21. That is, each bare chip component 21 is
Only the upper surface 22a of the electrode portion 1a is sealed with the insulating material 3 so that only the electrode portion is exposed. The electrode section 22 is more convex than a circuit (not shown) formed on the circuit surface 21a.
【0053】そして、所定の電極部22に対応する位置
にバイアホール7が設けられて、配線層5との電気的な
接続がなされている。The via hole 7 is provided at a position corresponding to the predetermined electrode portion 22, and is electrically connected to the wiring layer 5.
【0054】したがって、この電子部品20においても
前述の電子部品10と同様の効果が得られ、ベアチップ
部品21を高密度に実装することが可能であり、配線部
6の薄型化及び小型化がなされ、ベアチップ部品1の動
作により発生する熱を効率良く放熱でき得ることから、
小型化に十分対応可能である。Therefore, also in this electronic component 20, the same effect as that of the above-described electronic component 10 can be obtained, the bare chip component 21 can be mounted at a high density, and the wiring section 6 can be made thinner and smaller. Since the heat generated by the operation of the bare chip component 1 can be efficiently dissipated,
Applicable to miniaturization.
【0055】また、本例の電子部品20においても、各
外部端子5bに図示しない検査装置の図示しないプロー
ブを接触させることにより、各外部端子5bにそれぞれ
対応する配線層5及びバイアホール7の断線の有無や、
ベアチップ部品21の故障の有無等を容易に検査し得る
ようになされている。Also, in the electronic component 20 of the present embodiment, disconnection of the wiring layer 5 and the via hole 7 corresponding to each external terminal 5b by contacting each external terminal 5b with a probe (not shown) of an inspection device (not shown). Or not,
The failure of the bare chip component 21 can be easily inspected.
【0056】次に、本例の電子部品20の製造方法につ
いて述べる。すなわち、先ず、図8に示すように、複数
のベアチップ部品21を回路面21aの回路よりも凸と
なされている電極部22の上面22aを接触面として板
材である仮固定板24に所定状態に配置して仮固定す
る。Next, a method for manufacturing the electronic component 20 of this embodiment will be described. That is, first, as shown in FIG. 8, a plurality of bare chip components 21 are placed in a predetermined state on a temporary fixing plate 24, which is a plate material, using the upper surface 22a of the electrode portion 22 that is more convex than the circuit on the circuit surface 21a as a contact surface. Place and temporarily fix.
【0057】次いで、図9に示すように図示しない所定
のモールド成形装置を用いて各ベアチップ部品21を埋
め込むような形状に例えばエポキシ樹脂等の樹脂である
絶縁材3を充填してモールドシート23として成形を行
い、これらベアチップ部品21を封止する。このように
すれば、各ベアチップ部品21間の間隔に係わらずに当
該ベアチップ部品21を樹脂23により確実に固定でき
ると共に、回路面21aと仮固定板24間に絶縁材3が
流れ込むことから回路面21aを絶縁材3により確実に
覆うことができ、ベアチップ部品21の回路面21aを
外気に含まれる不純物及び水分から保護することが可能
となる。したがって各ベアチップ部品21の間隔を、特
性を損なうことなく前述したような従来のマルチチップ
モジュールのような電子部品におけるベアチップ部品間
の間隔よりも格段に狭くし得る。すなわち、ベアチップ
部品21を高密度に実装することが可能となり、このよ
うにして製造される電子部品においては、品質及び信頼
性を低下させることなく小型化が可能となる。Next, as shown in FIG. 9, a predetermined molding apparatus (not shown) is used to fill the insulating material 3 which is a resin such as an epoxy resin into a shape in which each bare chip component 21 is embedded, thereby forming a mold sheet 23. Molding is performed to seal these bare chip components 21. In this way, the bare chip component 21 can be securely fixed by the resin 23 regardless of the interval between the bare chip components 21, and the insulating material 3 flows between the circuit surface 21 a and the temporary fixing plate 24. 21a can be reliably covered with the insulating material 3, and the circuit surface 21a of the bare chip component 21 can be protected from impurities and moisture contained in the outside air. Accordingly, the interval between the bare chip components 21 can be significantly narrower than the interval between the bare chip components in the electronic component such as the conventional multi-chip module as described above without deteriorating the characteristics. That is, the bare chip component 21 can be mounted at a high density, and the electronic component manufactured in this way can be reduced in size without deteriorating quality and reliability.
【0058】次に、仮固定板24を取り外し、図10に
示すようにベアチップ部品21の回路面21a側の電極
部22の上面22aのみを露呈させ、さらに回路面21
aとは反対側の主面21b側の絶縁材3をベアチップ部
品21の上記主面21bが現れるまで図示しない研磨機
を用いて研磨して除去する。Next, the temporary fixing plate 24 is removed, and only the upper surface 22a of the electrode portion 22 on the circuit surface 21a side of the bare chip component 21 is exposed as shown in FIG.
The insulating material 3 on the main surface 21b opposite to the side a is polished and removed using a polishing machine (not shown) until the main surface 21b of the bare chip component 21 appears.
【0059】続いて、図11に示すように、ベアチップ
部品21の主面21b側に接合材19を介して放熱板と
なる金属板8を接合する。かくして各ベアチップ部品2
1が、各電極部22が露出されるように絶縁材3によっ
て一体に封止され、かつ金属板8が取り付けられたモー
ルドシート23が形成されることとなる。Subsequently, as shown in FIG. 11, the metal plate 8 serving as a heat sink is joined to the main surface 21b side of the bare chip component 21 via a joining material 19. Thus each bare chip part 2
1 is integrally sealed by the insulating material 3 so that the respective electrode portions 22 are exposed, and a mold sheet 23 to which the metal plate 8 is attached is formed.
【0060】続いて上記モールドシート23に配線部6
を形成する。すなわち、モールドシート23の電極部2
2の上面22aが露呈する上面23aに感光性樹脂であ
る例えばポリイミドを滴下又は塗布する。そして、スピ
ンコートを行い、感光性樹脂を例えば30(μm)〜5
0(μm)の厚さとなるように広げる。Subsequently, the wiring portions 6 are formed on the mold sheet 23.
To form That is, the electrode portion 2 of the mold sheet 23
For example, polyimide, which is a photosensitive resin, is dropped or applied to the upper surface 23a where the upper surface 22a of the second substrate 2 is exposed. Then, spin coating is performed, and the photosensitive resin is, for example, 30 (μm) to 5 μm.
Spread to a thickness of 0 (μm).
【0061】次に、このモールドシート23を、内部が
所定温度に維持された図示しない所定の加熱炉内に入れ
て所定時間加熱することにより、感光性樹脂を硬化させ
る。さらに、この後、当該硬化した感光性樹脂の所定の
電極部22にそれぞれ対応する所定位置に、所定のフォ
トプロセスにより図12に示すように所定径を有する貫
通孔7aを形成することにより、モールドシート23の
上面23a上に感光性樹脂からなり、最下層となる絶縁
層4を形成する。Next, the mold sheet 23 is placed in a predetermined heating furnace (not shown) in which the inside is maintained at a predetermined temperature and heated for a predetermined time to cure the photosensitive resin. Thereafter, through holes 7a having a predetermined diameter are formed at predetermined positions corresponding to the predetermined electrode portions 22 of the cured photosensitive resin by a predetermined photo process, as shown in FIG. On the upper surface 23a of the sheet 23, an insulating layer 4 made of a photosensitive resin and serving as a lowermost layer is formed.
【0062】さらに、図示しない所定のスパッタ装置を
用いて絶縁層4上及び各貫通孔7aの内周面上にそれぞ
れ銅をスパッタリングして、絶縁層4上に所定の厚みを
有する銅薄膜を積層形成すると共に複数のバイアホール
7を形成する。この後銅薄膜をフォトプロセスによりパ
ターニングして図13中に示すように最下層となる絶縁
層4上にそれぞれ対応するバイアホール7と導通接続さ
れた導体パターンからなる最下層となる配線層5を形成
する。Further, copper is sputtered on the insulating layer 4 and on the inner peripheral surface of each through hole 7a using a predetermined sputtering device (not shown), and a copper thin film having a predetermined thickness is laminated on the insulating layer 4. At the same time, a plurality of via holes 7 are formed. Thereafter, the copper thin film is patterned by a photo process to form a wiring layer 5 as a lowermost layer made of a conductor pattern electrically connected to the corresponding via hole 7 on the insulating layer 4 as the lowermost layer as shown in FIG. Form.
【0063】これによりベアチップ部品21の各電極部
22が、それぞれ対応するバイアホール7を順次介して
対応する配線層5に導通接続される。Thus, each electrode portion 22 of the bare chip component 21 is electrically connected to the corresponding wiring layer 5 via the corresponding via hole 7 sequentially.
【0064】さらに、同様にして図13中に示すように
最下層となる配線層5上に絶縁層4を介して最上層とな
る配線層5を形成する。Further, similarly, as shown in FIG. 13, the uppermost wiring layer 5 is formed on the lowermost wiring layer 5 with the insulating layer 4 interposed therebetween.
【0065】なお、このとき、最上層となる配線層5を
一端5aに外部端子5bを有するものとすることは言う
までもなく、配線層5間に挟まれる絶縁層4にもバイア
ホール7を形成し、配線層5間を電気的に接続するよう
にすることも言うまでもない。At this time, needless to say, the uppermost wiring layer 5 has an external terminal 5b at one end 5a, and the via hole 7 is also formed in the insulating layer 4 interposed between the wiring layers 5. Needless to say, the wiring layers 5 are electrically connected.
【0066】さらに、最上層となる配線層5上に、ポリ
イミド樹脂等の感光性樹脂を滴下又は塗布した後スピン
コートして当該配線層5を感光性樹脂で覆う。次いでモ
ールドシート23を図示しない所定の加熱炉内に入れて
所定時間加熱することにより、感光性樹脂を硬化させ、
かくして最上層となる配線層5上に最上層となる絶縁層
4を積層形成する。この後、最上層となる配線層5上に
積層形成した最上層となる絶縁層4の所定の一端側を、
所定のフォトプロセスにより所定幅を有するように剥離
する。これにより最上層となる配線層5の各外部端子5
bを露出させる。かくして絶縁層4と、配線層5とが順
次交互に積層形成されてなる配線部6をモールドシート
23上に形成して電子部品を完成する。Further, a photosensitive resin such as a polyimide resin is dropped or applied on the uppermost wiring layer 5 and then spin-coated to cover the wiring layer 5 with the photosensitive resin. Next, by placing the mold sheet 23 in a predetermined heating furnace (not shown) and heating it for a predetermined time, the photosensitive resin is cured,
Thus, the insulating layer 4 to be the uppermost layer is formed on the wiring layer 5 to be the uppermost layer. Thereafter, a predetermined one end side of the uppermost insulating layer 4 laminated on the uppermost wiring layer 5 is
Peeling is performed by a predetermined photo process so as to have a predetermined width. Thereby, each external terminal 5 of the wiring layer 5 which is the uppermost layer
Expose b. In this manner, the wiring part 6 in which the insulating layers 4 and the wiring layers 5 are sequentially and alternately laminated is formed on the mold sheet 23 to complete the electronic component.
【0067】本例においても、前述した例と同様の効果
が得られ、配線部6を小型化及び薄型化することが可能
となり、小型化に十分対応可能である。Also in this embodiment, the same effects as those of the above-described embodiment can be obtained, and the size and thickness of the wiring section 6 can be reduced.
【0068】さらには、本例においては、はんだバンプ
等の突起電極を形成しないことから、製造工程が簡略化
されて生産性も向上する。Further, in this embodiment, since no bump electrodes such as solder bumps are formed, the manufacturing process is simplified and the productivity is improved.
【0069】上述した第1の例においては、各ベアチッ
プ部品1の回路面1aに形成された各電極部にそれぞれ
はんだバンプ2を形成するようにした場合について述べ
たが、本発明はこれに限らず、はんだバンプ2に代え
て、例えば、各ベアチップ部品1の回路面1aに形成さ
れた各電極部上にそれぞれ金よりなる突起電極を設ける
ようにしても良い。In the first example described above, the case where the solder bumps 2 are formed on the respective electrode portions formed on the circuit surface 1a of each bare chip component 1 has been described. However, the present invention is not limited to this. Instead of the solder bumps 2, for example, projecting electrodes made of gold may be provided on each electrode portion formed on the circuit surface 1a of each bare chip component 1.
【0070】また、上述の第1及び第2の例において
は、本発明を一層のマルチチップモジュールである電子
部品に適用するようにした場合について述べたが、本発
明はこれに限らず、複数のマルチチップモジュールをそ
れぞれエポキシ系等の接着剤を用いて張り合わせ積層し
た電子部品に適用するようにしても良い。In the first and second examples described above, the case where the present invention is applied to an electronic component which is a multi-layer module is described. However, the present invention is not limited to this. The multi-chip module may be applied to an electronic component which is laminated by using an adhesive such as epoxy.
【0071】さらに、上述の第1及び第2の例において
は、成形機を使用して絶縁材3を充填して成形した場合
について述べたが、本発明はこれに限らず、その他の手
法によって各ベアチップ部品1,21を一体に封止する
ようにしても良い。Further, in the above-mentioned first and second examples, the case where the insulating material 3 is filled and molded by using a molding machine has been described. However, the present invention is not limited to this, and other methods are used. The bare chip components 1 and 21 may be integrally sealed.
【0072】さらにまた、上述の第1及び第2の例にお
いては、絶縁層4をポリイミドによって形成することと
したが、本発明はこれに限らず、他の感光性樹脂により
絶縁層4を形成するようにしても良い。Further, in the first and second examples described above, the insulating layer 4 is formed of polyimide, but the present invention is not limited to this, and the insulating layer 4 may be formed of another photosensitive resin. You may do it.
【0073】さらには、上述の第1及び第2の例におい
ては、絶縁層4をスピンコートによって形成することと
したが、本発明はこれに限らず、印刷法等の手法により
絶縁層4を形成するようにしても良い。Further, in the first and second examples described above, the insulating layer 4 is formed by spin coating. However, the present invention is not limited to this, and the insulating layer 4 may be formed by a printing method or the like. It may be formed.
【0074】また、上述の第1及び第2の例において
は、配線層の5の導体パターンを銅薄膜から形成するよ
うにしたが、本発明はこれに限らず、導体パターンをア
ルミニウム薄膜等のような種々の導電性金属薄膜から形
成するようにしても良い。また、銅箔やアルミニウム箔
等のように金属箔から形成しても良い。In the first and second examples described above, the conductor pattern of the wiring layer 5 is formed from a copper thin film. However, the present invention is not limited to this. It may be formed from such various kinds of conductive metal thin films. Moreover, you may form from metal foil like copper foil and aluminum foil.
【0075】さらに、上述の第1及び第2の例において
は、絶縁材3としてエポキシ樹脂等の樹脂を使用した
が、絶縁材3としては、所定状態に配置された各ベアチ
ップ部品1,21を一体に封止することができれば、そ
の他の樹脂材等のような種々の絶縁材を適用するように
しても良い。Further, in the first and second examples described above, a resin such as an epoxy resin is used as the insulating material 3, but each of the bare chip components 1, 21 arranged in a predetermined state is used as the insulating material 3. Various insulating materials such as other resin materials may be applied as long as they can be integrally sealed.
【0076】さらにまた、上述の第1及び第2の例にお
いては、各はんだバンプとそれぞれ対応する配線層及び
それぞれ対応する配線層間を導通接続する導通接続手段
として、貫通孔7aの内周面上に銅薄膜が形成されてな
るバイアホール7を適用するようにした場合について述
べたが、本発明はこれに限らず、貫通孔7aの内周面上
にアルミニウム薄膜が形成されてなるバイアホールや、
当該貫通孔7aを埋め込むようにして銀等の導電材が充
填されてなるバイアホール等の導通接続手段を適用する
ようにしても良い。Further, in the above-described first and second examples, as the conductive connection means for conductively connecting the wiring layers corresponding to the respective solder bumps and the corresponding wiring layers, the conductive bumps are formed on the inner peripheral surface of the through hole 7a. However, the present invention is not limited to this, and a via hole formed with an aluminum thin film on the inner peripheral surface of the through-hole 7a, and the like. ,
A conductive connection means such as a via hole filled with a conductive material such as silver so as to fill the through hole 7a may be applied.
【0077】さらには、上述の第1及び第2の例におい
ては、本発明をマルチチップモジュールである電子部品
10,20に適用した例について述べたが、本発明はこ
れに限られるものではなく、複数の電子部品が設けられ
てなる半導体装置等に適用するようにしても良い。Further, in the above-described first and second examples, examples in which the present invention is applied to the electronic components 10 and 20 which are multi-chip modules have been described. However, the present invention is not limited to this. Alternatively, the present invention may be applied to a semiconductor device provided with a plurality of electronic components.
【0078】また、上述の第2の例においては、電子部
品20を製造する際、金属板8取り付け後に絶縁層4及
び配線層5を形成したが、本発明はこれに限らず、絶縁
層4及び配線層5を形成後に金属板を取り付けるように
しても良い。In the above-described second example, when the electronic component 20 is manufactured, the insulating layer 4 and the wiring layer 5 are formed after the metal plate 8 is attached. However, the present invention is not limited to this. Alternatively, a metal plate may be attached after forming the wiring layer 5.
【0079】さらに、上述の第1及び第2の例において
は、全てのベアチップ部品1,21が金属板8と接合さ
れているように述べたが、本発明はこれに限らず、少な
くとも1つ以上のベアチップ部品1,21が金属板と接
合されていれば良い。Furthermore, in the above-described first and second examples, it has been described that all the bare chip components 1 and 21 are joined to the metal plate 8, but the present invention is not limited to this, and at least one It is sufficient that the above bare chip components 1 and 21 are joined to a metal plate.
【0080】さらにまた、上述の第2の例においては、
電子部品20を製造する方法としてはんだバンプを有し
ないベアチップ部品21を用いたが、本発明はこれに限
らず、この製造方法おいてもはんだバンプ等の突起電極
を有するベアチップ部品を用いても良い。Further, in the above second example,
Although the bare chip component 21 having no solder bump is used as a method of manufacturing the electronic component 20, the present invention is not limited to this, and a bare chip component having a bump electrode such as a solder bump may be used in this manufacturing method. .
【0081】さらには、上述の第1及び第2の例におい
ては、放熱手段として放熱板である金属板8が独立して
設けられる例について述べたが、本発明はこれに限られ
るものではなく、複数個のベアチップ部品を封止する絶
縁材を覆うようなカバー部材を設け、ベアチップ部品の
回路面とは反対側となる主面にカバー部材の一部が接す
るようにして放熱手段としても良く、このようにすれば
最終的な形状の小型化もなされる。Further, in the above-described first and second examples, the example in which the metal plate 8 as the heat radiating plate is independently provided as the heat radiating means has been described, but the present invention is not limited to this. A cover member may be provided so as to cover an insulating material for sealing a plurality of bare chip components, and a part of the cover member may be in contact with a main surface opposite to a circuit surface of the bare chip component so as to serve as a heat radiating means. In this way, the final shape can be reduced in size.
【0082】[0082]
【発明の効果】以上の説明からも明らかなように、本発
明の電子部品においては、複数のベアチップ部品をそれ
ぞれの回路面が一面を形成するように配置し、これらベ
アチップ部品を電極部分のみが露呈するように絶縁材に
より封止しているため、ベアチップ部品の電極部分以外
は樹脂により確実に覆われることとなり、このベアチッ
プ部品の回路面側に複数の配線層を絶縁層を介して積層
形成するようにしているため、ベアチップ部品を高密度
に実装してもベアチップ部品の回路面と配線部間に樹脂
が充填され、回路面が保護され、品質及び信頼性を損な
うことなく、容易に小型化がなされる。As is clear from the above description, in the electronic component of the present invention, a plurality of bare chip components are arranged so that each circuit surface forms one surface, and these bare chip components are connected only to the electrode portions. Since it is sealed with an insulating material so as to be exposed, the parts other than the electrode part of the bare chip part are surely covered with the resin, and a plurality of wiring layers are laminated on the circuit surface side of the bare chip part via the insulating layer. Therefore, even if bare chip components are mounted at high density, resin is filled between the circuit surface and the wiring part of the bare chip components, the circuit surface is protected, and quality can be easily reduced without losing quality and reliability. Is made.
【0083】さらに、上記本発明の電子部品において、
絶縁層を感光性樹脂により形成し、ベアチップ部品の回
路面上に絶縁層を形成し、この上に複数層の配線層を絶
縁層を介して積層形成して、いわゆるビルドアップ基板
と同様にして絶縁層と配線層を形成するようにし、上記
絶縁層の所定の位置に内部に導電材料が配された孔部を
形成し、この孔部により、いわゆるスルーホールやバイ
アホールのようにして絶縁層を介して積層される電極部
と配線層間及び配線層同士を電気的に接続するようにす
れば、配線層が比較的高密度とされ、配線部の小型化が
なされ、絶縁層が比較的薄型とされ、配線部の薄型化が
なされ、小型化に十分対応可能である。Further, in the above electronic component of the present invention,
An insulating layer is formed of a photosensitive resin, an insulating layer is formed on a circuit surface of a bare chip component, and a plurality of wiring layers are formed on the insulating layer via an insulating layer, in the same manner as a so-called build-up board. An insulating layer and a wiring layer are formed, and a hole in which a conductive material is disposed is formed at a predetermined position of the insulating layer. The hole forms an insulating layer such as a so-called through hole or via hole. By electrically connecting the electrode portions and the wiring layers and the wiring layers laminated via the wiring layer, the wiring layers have a relatively high density, the wiring portions can be downsized, and the insulating layers can be relatively thin. Therefore, the thickness of the wiring portion is reduced, and it is possible to sufficiently cope with miniaturization.
【0084】さらに、上記本発明の電子部品において、
放熱手段としてベアチップ部品の回路面とは反対側とな
る主面に接する金属板を配するようにすれば、電子部品
の動作により生じる熱が効率良く放熱され、小型化に十
分対応可能である。Further, in the above electronic component of the present invention,
If a metal plate in contact with the main surface opposite to the circuit surface of the bare chip component is arranged as a heat radiating means, heat generated by the operation of the electronic component is efficiently radiated, and it is possible to sufficiently cope with miniaturization.
【0085】また、複数個のベアチップ部品を封止する
絶縁材を覆うようなカバー部材を設け、ベアチップ部品
の回路面とは反対側となる主面にカバー部材の一部が接
するようにして放熱手段とすれば、最終的な形状の小型
化もなされる。Further, a cover member is provided so as to cover an insulating material for sealing a plurality of bare chip components, and heat is dissipated so that a part of the cover member is in contact with a main surface opposite to a circuit surface of the bare chip components. As a means, the final shape can be reduced in size.
【図1】本発明を適用した電子部品の一例を示す断面図
である。FIG. 1 is a cross-sectional view illustrating an example of an electronic component to which the present invention has been applied.
【図2】本発明を適用した電子部品の製造方法の一例を
工程順に示す断面図であり、ベアチップ部品を金属板上
に配置する工程を示す断面図である。FIG. 2 is a cross-sectional view illustrating an example of a method of manufacturing an electronic component to which the present invention is applied, in the order of steps, and is a cross-sectional view illustrating a step of arranging a bare chip component on a metal plate.
【図3】本発明を適用した電子部品の製造方法の一例を
工程順に示す断面図であり、ベアチップ部品を絶縁材に
より封止する工程を示す断面図である。FIG. 3 is a cross-sectional view illustrating an example of a method of manufacturing an electronic component to which the present invention is applied, in the order of steps, and is a cross-sectional view illustrating a step of sealing a bare chip component with an insulating material.
【図4】本発明を適用した電子部品の製造方法の一例を
工程順に示す断面図であり、モールドシートの上面を研
磨する工程を示す断面図である。FIG. 4 is a cross-sectional view illustrating an example of a method for manufacturing an electronic component to which the present invention is applied in the order of steps, and is a cross-sectional view illustrating a step of polishing an upper surface of a mold sheet.
【図5】本発明を適用した電子部品の製造方法の一例を
工程順に示す断面図であり、最下層となる絶縁層を形成
する工程を示す断面図である。FIG. 5 is a cross-sectional view illustrating an example of a method of manufacturing an electronic component to which the present invention is applied in the order of steps, and is a cross-sectional view illustrating a step of forming an insulating layer to be a lowermost layer.
【図6】本発明を適用した電子部品の製造方法の一例を
工程順に示す断面図であり、絶縁層及び配線層を形成す
る工程を示す断面図である。FIG. 6 is a cross-sectional view illustrating an example of a method for manufacturing an electronic component to which the present invention is applied, in the order of steps, and is a cross-sectional view illustrating a step of forming an insulating layer and a wiring layer.
【図7】本発明を適用した電子部品の他の例を示す断面
図である。FIG. 7 is a sectional view showing another example of an electronic component to which the present invention is applied.
【図8】本発明を適用した電子部品の製造方法の他の例
を工程順に示す断面図であり、ベアチップ部品を仮固定
板上に配置する工程を示す断面図である。FIG. 8 is a cross-sectional view illustrating another example of a method of manufacturing an electronic component to which the present invention is applied, in the order of steps, and is a cross-sectional view illustrating a step of disposing a bare chip component on a temporary fixing plate.
【図9】本発明を適用した電子部品の製造方法の他の例
を工程順に示す断面図であり、ベアチップ部品を絶縁材
により封止する工程を示す断面図である。FIG. 9 is a cross-sectional view illustrating another example of a method of manufacturing an electronic component to which the present invention is applied, in the order of steps, and is a cross-sectional view illustrating a step of sealing a bare chip component with an insulating material.
【図10】本発明を適用した電子部品の製造方法の他の
例を工程順に示す断面図であり、仮固定板を取り外し、
樹脂を研磨する工程を示す断面図である。FIG. 10 is a cross-sectional view showing another example of a method for manufacturing an electronic component to which the present invention is applied in the order of steps, in which a temporary fixing plate is removed;
It is sectional drawing which shows the process of grinding | polishing resin.
【図11】本発明を適用した電子部品の製造方法の他の
例を工程順に示す断面図であり、金属板を配する工程を
示す断面図である。FIG. 11 is a cross-sectional view illustrating another example of a method of manufacturing an electronic component to which the present invention is applied, in the order of steps, and is a cross-sectional view illustrating a step of disposing a metal plate.
【図12】本発明を適用した電子部品の製造方法の他の
例を工程順に示す断面図であり、最下層となる絶縁層を
形成する工程を示す断面図である。FIG. 12 is a cross-sectional view showing another example of the method of manufacturing an electronic component to which the present invention is applied in the order of steps, and is a cross-sectional view showing a step of forming an insulating layer to be the lowermost layer.
【図13】本発明を適用した電子部品の製造方法の他の
例を工程順に示す断面図であり、絶縁層及び配線層を形
成する工程を示す断面図である。FIG. 13 is a cross-sectional view showing another example of the method for manufacturing an electronic component to which the present invention is applied, in the order of steps, and is a cross-sectional view showing the step of forming an insulating layer and a wiring layer.
【図14】従来のマルチチップモジュールを示す断面図
である。FIG. 14 is a sectional view showing a conventional multichip module.
1,21 ベアチップ部品、1a,21a 回路面、2
はんだバンプ、3絶縁材、4 絶縁層、5 配線層、
5b 外部端子、6 配線部、7 バイアホール、8
金属板、10,20 電子部品、22 電極部1,21 bare chip parts, 1a, 21a circuit surface, 2
Solder bumps, 3 insulating materials, 4 insulating layers, 5 wiring layers,
5b external terminal, 6 wiring section, 7 via hole, 8
Metal plate, 10,20 electronic parts, 22 electrode part
Claims (10)
回路が形成される回路面となされる複数のベアチップ部
品が、これら回路面が一面を形成するように配置され、
これらベアチップ部品が電極部分のみが露呈するように
絶縁材により封止されてなり、ベアチップ部品の回路面
側に複数の配線層が絶縁層を介して積層形成されてなる
ことを特徴とする電子部品。1. A plurality of bare chip components, each having a main surface serving as a circuit surface on which a circuit including an electrode portion having an electrode portion is formed, are arranged such that these circuit surfaces form one surface,
An electronic component, characterized in that these bare chip components are sealed with an insulating material so that only electrode portions are exposed, and a plurality of wiring layers are formed on the circuit surface side of the bare chip component via an insulating layer. .
プ部品の回路面上に絶縁層を有し、この上に複数層の配
線層が絶縁層を介して積層形成されており、上記絶縁層
の所定の位置に内部に導電材料が配された孔部が形成さ
れ、この孔部により絶縁層を介して積層される電極部分
と配線層間及び配線層同士が電気的に接続されているこ
とを特徴とする請求項1記載の電子部品。2. The insulating layer according to claim 1, wherein the insulating layer is made of a photosensitive resin, has an insulating layer on a circuit surface of the bare chip component, and has a plurality of wiring layers laminated thereon via the insulating layer. A hole in which a conductive material is disposed is formed at a predetermined position, and this hole electrically connects an electrode portion laminated via an insulating layer, a wiring layer, and wiring layers. The electronic component according to claim 1, wherein:
る主面側に放熱手段が設けられていることを特徴とする
請求項1記載の電子部品。3. The electronic component according to claim 1, wherein a heat radiating means is provided on a main surface side opposite to a circuit surface of the bare chip component.
とは反対側となる主面に接する金属板が配されているこ
とを特徴とする請求項3記載の電子部品。4. The electronic component according to claim 3, wherein a metal plate in contact with a main surface opposite to a circuit surface of the bare chip component is disposed as a heat radiating means.
材を覆うようなカバー部材が設けられており、ベアチッ
プ部品の回路面とは反対側となる主面にカバー部材の一
部を接するようにして放熱手段としていることを特徴と
する請求項3記載の電子部品。5. A cover member for covering an insulating material for sealing a plurality of bare chip components, wherein a part of the cover member is in contact with a main surface opposite to a circuit surface of the bare chip components. 4. The electronic component according to claim 3, wherein said electronic component is a heat radiating means.
されると共に外部との接続部となる端子部が形成されて
いることを特徴とする請求項1記載の電子部品。6. The electronic component according to claim 1, wherein a terminal portion which is connected to another wiring layer and serves as a connection portion with the outside is formed on the uppermost wiring layer.
だバンプが形成されていることを特徴とする請求項1記
載の電子部品。7. The electronic component according to claim 1, wherein a solder bump is formed on an electrode portion of an electrode portion of the chip component.
りも凸となされていることを特徴とする請求項1記載の
電子部品。8. The electronic component according to claim 1, wherein the electrode portion of the electrode portion of the chip component is formed to be more convex than the circuit.
極部を有する電極部分を含む回路が形成される回路面と
なされる複数のベアチップ部品を、これら回路面が一面
を形成するように配置する第1の工程と、 これらベアチップ部品を覆うように絶縁材で封止する第
2の工程と、 ベアチップ部品の回路面側の絶縁材を除去してはんだバ
ンプを露呈させる第3の工程と、 ベアチップ部品の回路面側に、感光性樹脂よりなり、電
極部に対応する位置に内部に導電材料が配された孔部を
有する絶縁層を形成し、この上に複数の配線層を、感光
性樹脂よりなり内部に導電材料が配された孔部を有する
絶縁層を介して積層形成し、電極部と配線層間及び配線
層同士を電気的に接続する第4の工程とを有することを
特徴とする電子部品の製造方法。9. A plurality of bare chip parts each having a main surface serving as a circuit surface on which a circuit including an electrode portion having an electrode portion on which a solder bump is formed is formed, such that these circuit surfaces form one surface. A first step of disposing, a second step of sealing with an insulating material so as to cover the bare chip components, and a third step of removing the insulating material on the circuit surface side of the bare chip components and exposing the solder bumps. On the circuit surface side of the bare chip component, an insulating layer made of a photosensitive resin and having a hole in which a conductive material is disposed at a position corresponding to the electrode portion is formed, and a plurality of wiring layers are formed on the insulating layer. And a fourth step of laminating via an insulating layer made of a conductive resin and having a hole in which a conductive material is disposed, and electrically connecting the electrode portion with the wiring layer and between the wiring layers. Manufacturing method of electronic parts.
電極部分を含む回路が形成される回路面となされる複数
のベアチップ部品を、電極部表面を接触面として板材上
に配置する第1の工程と、 これらベアチップ部品を覆うように絶縁材で封止する第
2の工程と、 板材を除去し、電極部表面を露呈させる第3の工程と、 ベアチップ部品の回路面側に、感光性樹脂よりなり、電
極部に対応する位置に内部に導電材料が配された孔部を
有する絶縁層を形成し、この上に複数の配線層を、感光
性樹脂よりなり内部に導電材料が配された孔部を有する
絶縁層を介して積層形成し、電極部と配線層間及び配線
層同士を電気的に接続する第4の工程とを有することを
特徴とする電子部品の製造方法。10. A plurality of bare chip parts, each of which has a main surface serving as a circuit surface on which a circuit including an electrode portion having an electrode portion that is a projection is formed, are arranged on a plate material with the electrode portion surface as a contact surface. A first step, a second step of sealing with an insulating material so as to cover these bare chip parts, a third step of removing the plate material and exposing the electrode portion surface, and a circuit surface side of the bare chip parts, An insulating layer made of a photosensitive resin and having a hole in which a conductive material is disposed at a position corresponding to the electrode portion is formed, and a plurality of wiring layers are formed thereon, and the conductive material is formed of a photosensitive resin inside. A fourth step of laminating the insulating layer having the holes arranged therein and electrically connecting the electrode section with the wiring layers and between the wiring layers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11313897A JPH10303363A (en) | 1997-04-30 | 1997-04-30 | Electronic component and manufacture therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11313897A JPH10303363A (en) | 1997-04-30 | 1997-04-30 | Electronic component and manufacture therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10303363A true JPH10303363A (en) | 1998-11-13 |
Family
ID=14604534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11313897A Abandoned JPH10303363A (en) | 1997-04-30 | 1997-04-30 | Electronic component and manufacture therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10303363A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000059036A1 (en) * | 1999-03-26 | 2000-10-05 | Hitachi, Ltd. | Semiconductor module and method of mounting |
US6784541B2 (en) | 2000-01-27 | 2004-08-31 | Hitachi, Ltd. | Semiconductor module and mounting method for same |
JP2009033185A (en) * | 2008-09-05 | 2009-02-12 | Sanyo Electric Co Ltd | Semiconductor device and its production method |
JP2010538463A (en) * | 2007-08-29 | 2010-12-09 | フリースケール セミコンダクター インコーポレイテッド | Interconnects in multi-element packages |
JP2012529770A (en) * | 2009-06-24 | 2012-11-22 | インテル・コーポレーション | Multi-chip package and method for providing multi-chip package die-to-die interconnects |
-
1997
- 1997-04-30 JP JP11313897A patent/JPH10303363A/en not_active Abandoned
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000059036A1 (en) * | 1999-03-26 | 2000-10-05 | Hitachi, Ltd. | Semiconductor module and method of mounting |
US6940162B2 (en) | 1999-03-26 | 2005-09-06 | Renesas Technology Corp. | Semiconductor module and mounting method for same |
US6784541B2 (en) | 2000-01-27 | 2004-08-31 | Hitachi, Ltd. | Semiconductor module and mounting method for same |
JP2010538463A (en) * | 2007-08-29 | 2010-12-09 | フリースケール セミコンダクター インコーポレイテッド | Interconnects in multi-element packages |
JP2009033185A (en) * | 2008-09-05 | 2009-02-12 | Sanyo Electric Co Ltd | Semiconductor device and its production method |
US9875969B2 (en) | 2009-06-24 | 2018-01-23 | Intel Corporation | Multi-chip package and method of providing die-to-die interconnects in same |
JP2012529770A (en) * | 2009-06-24 | 2012-11-22 | インテル・コーポレーション | Multi-chip package and method for providing multi-chip package die-to-die interconnects |
US10510669B2 (en) | 2009-06-24 | 2019-12-17 | Intel Corporation | Multi-chip package and method of providing die-to-die interconnects in same |
US10763216B2 (en) | 2009-06-24 | 2020-09-01 | Intel Corporation | Multi-chip package and method of providing die-to-die interconnects in same |
US10923429B2 (en) | 2009-06-24 | 2021-02-16 | Intel Corporation | Multi-chip package and method of providing die-to-die interconnects in same |
US11824008B2 (en) | 2009-06-24 | 2023-11-21 | Intel Corporation | Multi-chip package and method of providing die-to-die interconnects in same |
US11876053B2 (en) | 2009-06-24 | 2024-01-16 | Intel Corporation | Multi-chip package and method of providing die-to-die interconnects in same |
US12113026B2 (en) | 2009-06-24 | 2024-10-08 | Intel Corporation | Multi-chip package and method of providing die-to-die interconnects in same |
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