JPH10296619A - Polishing surface plate - Google Patents

Polishing surface plate

Info

Publication number
JPH10296619A
JPH10296619A JP11463397A JP11463397A JPH10296619A JP H10296619 A JPH10296619 A JP H10296619A JP 11463397 A JP11463397 A JP 11463397A JP 11463397 A JP11463397 A JP 11463397A JP H10296619 A JPH10296619 A JP H10296619A
Authority
JP
Japan
Prior art keywords
polishing
cooling
surface plate
polished
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11463397A
Other languages
Japanese (ja)
Inventor
Yoshio Nakamura
由夫 中村
Masahiro Takeuchi
正博 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikoshi Machinery Corp
Original Assignee
Fujikoshi Machinery Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikoshi Machinery Corp filed Critical Fujikoshi Machinery Corp
Priority to JP11463397A priority Critical patent/JPH10296619A/en
Publication of JPH10296619A publication Critical patent/JPH10296619A/en
Pending legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To maintain the flatness of a surface plate optimum, improve polishing accuracy and enhance productivity by increasing the polishing speed. SOLUTION: This polishing surface plate 10 is constituted so that a level block 12, wherein a polishing face 11 is formed on the surface side of the polishing surface plate 10, is provided to polish the surface to be polished of a workpiece flat with the surface of the workpiece pressed against the polishing face 11. In this case, coolant flowing passages through which coolant flows in two layers in the depth direction are formed within the level block 12, and the thickness of a core layer section 15 corresponding to the part between the two layer coolant flow passages 20A and 20B is larger than the thickness of the top side layer section 14 corresponding to the part between the surface and the coolant flow passage 20A on the surface side and the thickness of the bottom side layer section 16 corresponding to the part between the back face 13, which is the opposite side of the surface side, and the coolant flow passage 20B on the side of the back face 13.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、研磨用定盤に関
し、さらに詳細には、被研磨物の被研磨面が押し当てら
れて該被研磨面を平坦に研磨する研磨面が、表面の側に
形成されるように設けられた定盤を備える研磨用定盤に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing surface plate, and more particularly, to a polishing surface for pressing a surface to be polished of an object to be polished to flatten the surface to be polished. The present invention relates to a polishing surface plate provided with a surface plate provided so as to be formed on a polishing plate.

【0002】この研磨用定盤は、被研磨物であるウェー
ハの表面を研磨するウェーハの研磨装置に装着されて用
いられる。ウェーハの研磨装置には、ポリシング装置、
及びラッピング装置がある。例えば、ポリシング装置
は、図5に示すように基本的に、ウェーハ50の表面を
研磨する研磨面51を有する研磨用定盤52、その研磨
用定盤52に対向して配されてウェーハ50を保持する
ウェーハの保持部53、ウェーハ50の表面を研磨面5
1に当接させるべくウェーハの保持部53と研磨用定盤
52とを接離動させる接離動機構54、ウェーハの保持
部53に保持されたウェーハ50を研磨面51に所定の
押圧力で押し当てる押圧機構55、ウェーハ50が研磨
面51に押し当てられた状態でそのウェーハ保持部53
(ウェーハ50)と研磨用定盤52(研磨面51)とを
回転および/または往復動によって相対的に運動させる
駆動機構56、スラリーと呼ばれる液状の研磨剤の供給
機構等の構成を備えている。研磨用定盤52は、通常、
金属板またはセラミックス板から成る定盤(本体)の表
面上に、布もしくはフェルト状のクロス、またはスポン
ジもしくは短毛刷子状の部材等の研磨面を構成する部材
が固定されて構成され、広義にはその定盤を受けて支持
する定盤受け部等の構成を含むものである。このように
構成されたポリシング装置によれば、薄板状の被研磨物
であるウェーハの表面、例えば半導体装置用のシリコン
ウェーハの表面を、鏡面研磨及び平坦化することができ
る。
This polishing surface plate is used by being mounted on a wafer polishing apparatus for polishing the surface of a wafer to be polished. Wafer polishing equipment includes polishing equipment,
And a wrapping device. For example, as shown in FIG. 5, the polishing apparatus basically has a polishing surface plate 52 having a polishing surface 51 for polishing the surface of the wafer 50, and is disposed to face the polishing surface plate 52 to remove the wafer 50. Holder 53 for holding wafer, polishing surface 5 of wafer 50
A contact / separation mechanism 54 for moving the wafer holding unit 53 and the polishing platen 52 toward and away from the wafer holder 50 so that the wafer 50 is held against the polishing surface 51 by a predetermined pressing force. The pressing mechanism 55 for pressing, the wafer holding portion 53 in a state where the wafer 50 is pressed against the polishing surface 51.
A drive mechanism 56 for relatively moving the (wafer 50) and the polishing platen 52 (polishing surface 51) by rotation and / or reciprocation is provided, and a supply mechanism of a liquid abrasive called a slurry is provided. . The polishing platen 52 is usually
A member constituting a polishing surface, such as a cloth or a felt-like cloth, or a sponge or a short brush-like member, is fixed on a surface of a surface plate (main body) made of a metal plate or a ceramic plate. Includes a surface plate receiving portion for receiving and supporting the surface plate. According to the polishing apparatus configured as described above, the surface of a thin plate-like wafer to be polished, for example, the surface of a silicon wafer for a semiconductor device can be mirror-polished and flattened.

【0003】[0003]

【従来の技術】従来から、上記のようなウェーハの研磨
装置において、その研磨用定盤の本体(以下、単に「定
盤」という)は、ウェーハの研磨精度を向上させるた
め、高い平坦度が要求される。特に半導体チップの原料
となるシリコンウェーハの平坦度は、サブミクロンの精
度が要求されているため、定盤は僅かな変形も許され
ず、その剛性は非常に高いことが要求される。剛性を高
めるには、その材質を選択すること、或いはその板厚を
厚くすることによっている。なお、従来の定盤の材質
は、一般的にポリシング装置の場合はその耐化学性から
ステンレススチールが用いられ、ラッピング装置の場合
は鋳鉄が用いられている。
2. Description of the Related Art Conventionally, in a wafer polishing apparatus as described above, the main body of a polishing platen (hereinafter simply referred to as a "platen") has a high flatness in order to improve the polishing accuracy of the wafer. Required. In particular, since the flatness of a silicon wafer, which is a raw material of a semiconductor chip, is required to have a submicron precision, the surface plate is not allowed to be slightly deformed and its rigidity is required to be very high. In order to increase the rigidity, the material is selected or the plate thickness is increased. Generally, stainless steel is used as the material of the conventional surface plate in the case of a polishing apparatus because of its chemical resistance, and in the case of a lapping apparatus, cast iron is used.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上記従
来の研磨用定盤では、被研磨物(ウェーハ)の表面と研
磨面とが擦れ合う際に発生する熱によって、定盤の研磨
面側が温められて熱膨張によって変形し、研磨の開始時
とある時間が経過した後の研磨面の平坦度が変化してい
た。すなわち、定盤の研磨面側である表面側の温度が摩
擦熱によって高いのに対し、定盤の裏面側は温度が低い
ため、定盤は表面側が凸状に反ってしまい、そのために
ウェーハ表面の平坦度(研磨精度)を向上できないとい
う課題があった。従来例として、室温摂氏24度の恒温
室において定盤の研磨面が摂氏40度以上になると、研
磨面の平坦度が低下してウェーハを所望の平坦度に研磨
できないという課題があった。
However, in the above-mentioned conventional polishing platen, the polished surface side of the platen is heated by heat generated when the surface of the object to be polished (wafer) rubs against the polished surface. It deformed due to thermal expansion, and the flatness of the polished surface at the start of polishing and after a certain period of time had changed. In other words, the temperature on the front side, which is the polished surface side of the surface plate, is high due to frictional heat, whereas the temperature on the back surface side of the surface plate is low, so that the surface side of the surface plate is warped in a convex shape. However, there was a problem that the flatness (polishing accuracy) cannot be improved. As a conventional example, when the polished surface of the surface plate becomes 40 degrees Celsius or more in a constant temperature room at room temperature of 24 degrees Celsius, there is a problem that the flatness of the polished surface is reduced and the wafer cannot be polished to a desired flatness.

【0005】これに対し、従来は、先ず、図6(斜視断
面図)、図7(平面断面図)に示すように定盤52の内
部に単層の冷却水が流通する冷却流路60を形成し、そ
の冷却流路60に冷却水を流して定盤52が過熱するこ
とを抑制して定盤52が変形することを抑制していた。
なお、図中の矢印は冷却水の流れ方向を示す。冷却流路
50を、ジグザク状に形成したのは、冷却水を方向性を
もって流すと共に冷却水が全面を効率良く冷却させるた
めである。しかし、このように冷却しても、表面(研磨
面側の面)と裏面との間の温度勾配は、表面が高く裏面
側へいくに従って一方的に低くなってしまう。従って、
表面側が伸び、定盤は全体的に表面側が凸状に反るよう
に変形することは避けられないという課題があった。な
お、放熱性を高める形状構造にして冷却効率を高めるこ
とは考えられるが、そのような形状構造にすると剛性が
低下してしまい、ウェーハを押し当てる押圧力等によっ
て研磨面の精度がかえって低下することになる。また、
低温の冷却水を流すと、定盤の表面が良く冷却されるも
のの、裏面も必要以上に冷却されることになり、結果的
に定盤の表面と裏面の間の温度勾配の関係は変わらず、
定盤の変形は避けられない。
On the other hand, conventionally, as shown in FIGS. 6 (perspective sectional view) and FIG. 7 (plan sectional view), a cooling channel 60 through which a single layer of cooling water flows is provided inside a surface plate 52. The cooling water is supplied to the cooling channel 60 to prevent the surface plate 52 from overheating, thereby suppressing the deformation of the surface plate 52.
The arrows in the figure indicate the flow direction of the cooling water. The reason why the cooling flow path 50 is formed in a zigzag shape is to allow the cooling water to flow in a direction and to efficiently cool the entire surface. However, even with such cooling, the temperature gradient between the front surface (the surface on the polished surface side) and the back surface is unilaterally reduced as the surface becomes higher and moves toward the back surface. Therefore,
There is a problem that the surface side is elongated and the surface plate is inevitably deformed so that the entire surface side is convexly curved. In addition, it is conceivable to increase the cooling efficiency by adopting a shape structure that enhances heat dissipation, but if such a shape structure is adopted, the rigidity is reduced, and the accuracy of the polished surface is reduced due to the pressing force against the wafer. Will be. Also,
When low-temperature cooling water flows, the surface of the surface plate is cooled well, but the back surface is also cooled more than necessary, and as a result, the relationship of the temperature gradient between the surface and the back surface of the surface plate remains unchanged ,
Surface plate deformation is inevitable.

【0006】このため、従来は、ウェーハの表面と研磨
面とが擦れ合うことによって生じる発熱量自体を抑制す
るよう、研磨速度を低く抑えていた。(なお、研磨速度
を抑えるには、ウェーハを研磨面に押し当てる押圧力を
低くすることと、ウェーハと研磨面との相対的な運動の
速度を遅くすればよい。)従って、従来の研磨用定盤で
は研磨効率を高めることができないという課題があっ
た。
For this reason, conventionally, the polishing rate has been kept low so as to suppress the amount of heat generated by the friction between the surface of the wafer and the polished surface. (Note that in order to suppress the polishing rate, the pressing force for pressing the wafer against the polishing surface may be reduced, and the speed of the relative movement between the wafer and the polishing surface may be reduced.) There was a problem that the polishing efficiency could not be increased with the surface plate.

【0007】そこで、本発明の目的は、定盤の平坦度を
好適に維持し、研磨精度を向上できると共に、研磨速度
を速めて生産性を向上できる研磨用定盤を提供すること
にある。
Accordingly, an object of the present invention is to provide a polishing surface plate that can maintain the flatness of the surface surface suitably, improve the polishing accuracy, and increase the polishing speed to improve the productivity.

【0008】[0008]

【課題を解決するための手段】上記の目的を達成するた
め、本発明は次の構成を備える。すなわち、本発明は、
被研磨物の被研磨面が押し当てられて該被研磨面を平坦
に研磨する研磨面が、表面の側に形成されるように設け
られた定盤を備える研磨用定盤において、前記定盤の内
部に、厚さ方向に2層に冷却液が流通される冷却流路が
形成され、該2層の冷却流路の層間隔の部分に相当する
芯層部の厚さが、前記表面と該表面の側の冷却流路との
層間隔の部分に相当する表層部の厚さ、及び前記表面の
反対の面である裏面と該裏面の側の冷却流路との層間隔
の部分に相当する裏層部の厚さよりも厚いことを特徴と
する。
To achieve the above object, the present invention has the following arrangement. That is, the present invention
A polishing surface plate comprising a surface plate provided such that a surface to be polished is pressed against the surface to be polished and the surface to be polished is polished flat; Inside, a cooling channel through which the cooling liquid flows in two layers in the thickness direction is formed, and the thickness of the core layer portion corresponding to the portion of the space between the two layers of the cooling channel is the same as the surface. The thickness of the surface layer portion corresponding to the portion of the layer between the cooling channel on the front side and the portion of the layer interval between the back surface opposite to the front surface and the cooling channel on the back side. It is characterized in that it is thicker than the thickness of the back layer portion.

【0009】また、前記2層の冷却流路は相互に連通
し、冷却液は、前記表面の側の冷却流路、前記裏面の側
の冷却流路の順に流れることで、必然的に表側の冷却流
路へ流入される冷却液の温度が、裏側の冷却流路へ流入
される冷却液の温度よりも低くなり、定盤全体をバラン
ス良く且つ効率良く冷却することができ、定盤の平坦度
を好適に維持して被研磨面を研磨する研磨精度を向上で
きる。
The two-layer cooling passages communicate with each other, and the cooling liquid flows in the order of the cooling passage on the front side and the cooling passage on the back side, so that the cooling liquid inevitably flows on the front side. The temperature of the cooling liquid flowing into the cooling flow path is lower than the temperature of the cooling liquid flowing into the cooling flow path on the back side, and the entire surface plate can be cooled in a well-balanced and efficient manner. Polishing accuracy for polishing the surface to be polished can be improved while maintaining the degree appropriately.

【0010】また、前記芯層部、前記表層部、及び前記
裏層部が別々に成形され、3層が積層されて形成された
ことで、従来の加工方法で容易に製造できる。
In addition, since the core layer, the surface layer, and the back layer are formed separately and three layers are laminated, they can be easily manufactured by a conventional processing method.

【0011】また、本発明にかかる研磨用定盤が、前記
被研磨物がウェーハであり、該ウェーハをポリシング或
いはラッピングする研磨装置に設けられることで、高い
平面研磨精度が要求される分野で好適に利用される。
Further, the polishing plate according to the present invention is provided in a polishing apparatus for polishing or lapping the wafer, wherein the object to be polished is a wafer. Used for

【0012】[0012]

【発明の実施の形態】以下、本発明の好適な実施形態を
添付図面に基づいて詳細に説明する。図1は本発明にか
かるウェーハの研磨装置に用いられる研磨用定盤の一実
施形態を模式的に示す斜視断面図である。図1では、被
研磨物であるウェーハの被研磨面であるウェーハ表面が
押し当てられ、そのウェーハ表面を平坦に研磨する研磨
面11が、表面の側に形成されるように設けられた研磨
用定盤10の定盤本体(以下、単に「定盤12」とい
う)の内部構造を、断面で説明している。図に明らかな
ように定盤12の内部には、厚さ方向に2層に冷却液が
流通される冷却流路20が形成されている。なお、定盤
12の表面には、布もしくはフェルト状のクロス、また
はスポンジもしくは短毛刷子状の部材等が固定されてお
り、それによって研磨面11が構成される。
Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a perspective sectional view schematically showing one embodiment of a polishing platen used in a wafer polishing apparatus according to the present invention. In FIG. 1, a polishing surface 11 is provided so that a surface of a wafer to be polished is pressed against the surface of the wafer to be polished, and a polishing surface 11 for polishing the wafer surface flat is formed on the surface side. The internal structure of the platen body (hereinafter, simply referred to as “platen 12”) of the platen 10 is described in cross section. As is clear from the figure, a cooling channel 20 through which the cooling liquid flows in two layers in the thickness direction is formed inside the surface plate 12. A cloth or a felt-like cloth, a sponge or a short brush-like member, or the like is fixed to the surface of the surface plate 12, and the polishing surface 11 is configured by the cloth or the felt-like cloth.

【0013】20Aは表面側の冷却流路であり、定盤1
2の表面(研磨面11)の側に設けられている。また、
20Bは裏面側の冷却流路であり、前記研磨面11と反
対の面である裏面13側に設けられている。冷却流路2
0が2層であるため効率良く冷却できる。この2層の冷
却流路20A、20Bは層間流路22によって相互に連
通し、冷却液は、図中の矢印のように、先ず表面側の冷
却流路20Aへ供給され、定盤12の研磨面11を冷却
した後、層間流路22を通って裏面側の冷却流路20B
へ供給される。このように冷却液を表面側の冷却流路2
0Aから裏面側の冷却流路20Bの順に流すことで、表
面側の冷却流路20Aへ流入される冷却液の温度が、必
然的に裏面側の冷却流路20Bへ流入される冷却液の温
度よりも低くなる。すなわち、冷却液は表面側の冷却流
路20Aを通過することで温められるので 裏面側の冷
却流路20Bまで流れてきた際には、表面側の冷却流路
20Aへ流入したときよりも、その温度は当然に上昇し
ている。従って、冷却液による冷却効果は、定盤12全
体にバランス良く作用し、定盤12の熱変形を抑制で
き、研磨精度を好適に向上できる。
Reference numeral 20A denotes a cooling channel on the front side,
2 is provided on the side of the surface (polishing surface 11). Also,
Reference numeral 20B denotes a cooling channel on the back surface, which is provided on the back surface 13 side opposite to the polishing surface 11. Cooling channel 2
Since 0 is two layers, it can be cooled efficiently. The two cooling channels 20A and 20B communicate with each other through an interlayer channel 22, and the cooling liquid is first supplied to the front surface side cooling channel 20A as shown by the arrow in FIG. After cooling the surface 11, the cooling channel 20B on the back side passes through the interlayer channel 22.
Supplied to As described above, the cooling liquid is supplied to the cooling channel 2 on the front side.
0A, the temperature of the coolant flowing into the cooling channel 20A on the front side necessarily increases the temperature of the coolant flowing into the cooling channel 20B on the back side. Lower than. That is, since the coolant is warmed by passing through the cooling channel 20A on the front side, when the coolant flows to the cooling channel 20B on the back side, the coolant is more heated than when flowing into the cooling channel 20A on the front side. The temperature is naturally rising. Therefore, the cooling effect of the cooling liquid acts on the entire surface plate 12 in a well-balanced manner, so that thermal deformation of the surface plate 12 can be suppressed, and polishing accuracy can be suitably improved.

【0014】そして、図1に示すように、前記2層の冷
却流路20A、20Bの層間隔の部分に相当する芯層部
15の厚さが、研磨面11と表面側の冷却流路20Aと
の層間隔の部分に相当する表層部14の厚さ、及び研磨
面の反対の面(裏面13)と裏面側の冷却流路20Bと
の層間隔の部分に相当する裏層部16の厚さよりも厚
い。例えば、本実施形態では、芯層部15の厚さが、表
層部14の厚さ又は裏層部16の厚さの3倍に設定され
ている。部材の剛性は厚さの3乗に比例して増大するの
で、芯層部15の剛性は、表層部14又は裏層部16の
剛性の27倍になる。そして、芯層部15は、2層の冷
却流路20A、20Bに囲まれて冷却水に包まれた状態
になる。従って、芯層部15の温度は、2層の冷却流路
20A、20Bの間にあって均一温度に保たれる。これ
によって芯層部15の熱変形を好適に抑制でき、その熱
変形していない芯層部15の剛性を利用して表層部14
及び裏層部16が変形することを抑制できる。すなわ
ち、たとえ表層部14及び裏層部16が加熱されて熱膨
張しようとしても、その力を剛性の高い芯層部15で引
っ張り、内部応力として閉じ込めることができる。この
ように、芯層部15は冷却水によって囲まれて変形する
ことが防止され、表層部14及び裏層部16も上述した
原理で加熱されても変形することが抑制されることで、
結局、定盤12全体としての熱による変形を抑制でき、
研磨精度を好適に向上できる。
As shown in FIG. 1, the thickness of the core layer 15 corresponding to the space between the two cooling passages 20A and 20B corresponds to the polishing surface 11 and the cooling passage 20A on the front side. And the thickness of the back layer portion 16 corresponding to the portion between the surface opposite to the polished surface (back surface 13) and the cooling channel 20B on the back surface. Thicker than it is. For example, in the present embodiment, the thickness of the core layer 15 is set to be three times the thickness of the surface layer 14 or the thickness of the back layer 16. Since the rigidity of the member increases in proportion to the cube of the thickness, the rigidity of the core layer 15 is 27 times the rigidity of the surface layer 14 or the back layer 16. The core layer 15 is surrounded by the cooling water surrounded by the two cooling channels 20A and 20B. Therefore, the temperature of the core layer portion 15 is maintained between the two cooling passages 20A and 20B at a uniform temperature. Thereby, the thermal deformation of the core layer 15 can be suitably suppressed, and the rigidity of the core layer 15 that has not been thermally deformed is utilized to make use of the surface layer 14.
And it can control that back layer part 16 deforms. That is, even if the surface layer portion 14 and the back layer portion 16 are heated and thermally expanded, the force can be pulled by the highly rigid core layer portion 15 and confined as internal stress. As described above, the core layer portion 15 is prevented from being deformed by being surrounded by the cooling water, and the surface layer portion 14 and the back layer portion 16 are suppressed from being deformed even when heated according to the above-described principle.
Eventually, deformation due to heat as the entire surface plate 12 can be suppressed,
Polishing accuracy can be suitably improved.

【0015】この効果は、芯層部15の厚さを、表層部
14及び裏層部16の厚さに比べ厚くすればするほど大
きくなる。このように芯層部15の剛性を好適に利用で
きるから、研磨面11の温度がある程度上昇しても研磨
面11の平坦度の精度は低下しない。このため、研磨速
度を速めても精度の高い研磨が可能となる。そして、そ
の結果、研磨にかかる生産性を著しく向上できるのであ
る。
This effect increases as the thickness of the core layer 15 increases as compared with the thickness of the surface layer 14 and the thickness of the back layer 16. As described above, since the rigidity of the core layer portion 15 can be suitably used, even if the temperature of the polishing surface 11 increases to some extent, the accuracy of the flatness of the polishing surface 11 does not decrease. For this reason, even if the polishing rate is increased, highly accurate polishing can be performed. As a result, the productivity for polishing can be significantly improved.

【0016】なお、冷却液を前記2層の冷却流路20
A、20Bへ供給する態様は、上記のような実施形態に
限定されるものではない。例えば、2層の冷却流路20
A、20Bを相互に連通せず、冷却液が別々に供給され
る構造としてもよい。この場合、表面側の冷却流路20
Aへ流入される冷却液の温度が、裏面側の冷却流路20
Bへ流入される冷却液の温度よりも低くなるように、2
つの冷却液の供給源を利用すればよい。さらに、本発明
の趣旨である定盤12全体の温度をより均一にするとい
う点からは、定盤12の研磨面11側の上昇した温度に
対応させて裏面13側の温度を上昇させるように、表面
側の冷却流路20Aへ高い温度の液(例えば所定の一定
温度に調整した温度調整水)を供給することも可能であ
る。ところで、ウェーハの加工を行う半導体装置製造工
場では、一定温度に調整された水(温度調整水)を種々
の温度について得られるように、複数の温度調整水の供
給装置が備えられており、容易に2種類の温度調整水を
得ることができる。従って、上記のような場合に、表面
側の冷却流路20Aと、裏面側の冷却流路20Bとに異
なる温度の温度調整水を容易に供給できる。
The cooling liquid is supplied to the two-layer cooling passage 20.
The mode of supplying to A and 20B is not limited to the above embodiment. For example, a two-layer cooling flow path 20
A and 20B may not be connected to each other, and may have a structure in which the coolant is separately supplied. In this case, the cooling channel 20 on the front side
A, the temperature of the coolant flowing into the cooling channel 20 on the back side
B so as to be lower than the temperature of the coolant flowing into B.
A single coolant supply may be used. Further, from the viewpoint of making the temperature of the entire surface plate 12 more uniform, which is the gist of the present invention, the temperature of the back surface 13 is increased in accordance with the increased temperature of the polishing surface 11 of the surface plate 12. It is also possible to supply a high-temperature liquid (for example, temperature-adjusted water adjusted to a predetermined constant temperature) to the cooling channel 20A on the front side. Incidentally, a semiconductor device manufacturing factory for processing a wafer is provided with a plurality of temperature-regulated water supply devices so that water (temperature-regulated water) adjusted to a constant temperature can be obtained at various temperatures. And two types of temperature-regulated water can be obtained. Therefore, in the case described above, it is possible to easily supply temperature-regulated water having different temperatures to the front-side cooling passage 20A and the rear-side cooling passage 20B.

【0017】[0017]

【実施例】次に図2〜4に基づいて、より具体的な実施
例について説明する。本実施例は、図1の実施形態と基
本的に同一の構成を備えており、芯層部15、表層部1
4、及び裏層部16が別々に成形され、3層積層されて
形成された例である。図2は側断面図であり、図3は図
2のX−X線断面図であって表面側の冷却流路20Aを
示し、図4は図2のY−Y線断面図であって裏面側の冷
却流路20Bを示している。
Next, a more specific embodiment will be described with reference to FIGS. This embodiment has basically the same configuration as the embodiment of FIG.
4 and an example in which the back layer portion 16 is formed separately and three layers are laminated. 2 is a side sectional view, FIG. 3 is a sectional view taken along line XX of FIG. 2, and shows a cooling channel 20A on the front side, and FIG. 4 is a sectional view taken along line YY of FIG. The cooling channel 20B on the side is shown.

【0018】表層部14は、全体的には円板状に形成さ
れ、その下面に表面側の冷却流路20Aとなる溝が形成
されている。この溝は図3に明らかなように円形を3分
割した扇形平面内で引き回された形状となっており、表
層部14の下面に3本設けられている。その溝の引き回
し形状は、溝の一端が円板の中心から始まり、直線的に
外周部まで引き出され、円板の外周部から内部へ向かっ
て同心円的に順次小さくなる複数の弧を連ねたジグザグ
状に引き回され、円板の中心部にきたところで、再び直
線的に外周部まで引き出された形状となっている。この
形状によって効率良く、且つ周速度の速い面から冷却す
るので、均一に冷却できる。なお、溝の一端で円板の中
心に位置する部位は、冷却液である冷却水の流入口23
になる。また、溝の他端で円板の外周に位置する部位
は、芯層部15の層間流路22と連通し、冷却水を裏面
側の冷却流路20Bへ排出する流出口24となってい
る。
The surface layer portion 14 is formed in a disk shape as a whole, and has a lower surface formed with a groove serving as a cooling channel 20A on the front surface side. As shown in FIG. 3, the grooves are formed in a fan-shaped plane obtained by dividing a circle into three, and three grooves are provided on the lower surface of the surface layer portion 14. The leading shape of the groove is a zigzag in which one end of the groove starts straight from the center of the disk, is linearly drawn out to the outer peripheral portion, and a plurality of arcs successively decreasing concentrically from the outer peripheral portion of the disk toward the inside. When it comes to the center of the disk, it is again drawn straight out to the outer periphery. With this shape, cooling is performed efficiently and from the surface with a high peripheral speed, so that uniform cooling can be achieved. In addition, a portion located at the center of the disk at one end of the groove is provided with an inflow port 23 for cooling water as a cooling liquid.
become. Further, a portion located at the other end of the groove on the outer periphery of the disk is an outlet 24 which communicates with the interlayer flow path 22 of the core layer portion 15 and discharges cooling water to the cooling flow path 20B on the back side. .

【0019】芯層部15は、全体的には円板状に形成さ
れ、両面は平坦に形成されている。円板の中心には厚さ
方向に連通し、冷却水を表面側の冷却流路20Aへ供給
する給水管路40を通過される貫通孔が形成されてい
る。また、円板の外周には、前記表層部14の流出口2
4に対応する位置に、層間流路22となる貫通孔が形成
されている。この芯層部15は、前記表層部14及び後
述する裏層部16の2倍の厚さに設定されており、その
剛性は8倍になっている、従って、前述したように定盤
12の平坦度を好適に維持できる。
The core layer 15 is formed in a disk shape as a whole, and both sides are formed flat. A through-hole is formed at the center of the disc and communicates in the thickness direction and passes through a water supply conduit 40 that supplies cooling water to the cooling channel 20A on the front side. Also, on the outer periphery of the disk, the outlet 2 of the surface layer portion 14 is provided.
At positions corresponding to No. 4, through holes serving as interlayer flow paths 22 are formed. The core layer portion 15 is set to have a thickness twice that of the surface layer portion 14 and a back layer portion 16 to be described later, and its rigidity is eight times. Flatness can be suitably maintained.

【0020】また、裏層部16は、全体的には円板状に
形成され、その上面に裏面側の冷却流路20Bとなる溝
が形成されている。この溝は、図4に明らかなように円
形を3分割した扇形平面内で引き回された形状となって
おり、3本が設けられている。その引き回し形状は、溝
の一端が円板の外周部から始まり、円板の外周部から内
部へ向かって同心円的に順次小さくなる複数の弧を連ね
たジグザグ状に引き回され、円板の中心部の開口部へ連
通する形状となっている。この形状によって効率良く、
且つ周速度の速い面から冷却するので、均一に冷却でき
る。なお、溝の一端で円板の外周に位置する部位は、芯
層部15の層間流路22と連通し、冷却水を裏面側の冷
却流路20Bへ流入する流入口25となっている。ま
た、溝の他端であって円板の中心に位置する部位は、冷
却水の排出口26になっている。
The back layer 16 is formed in a disk shape as a whole, and has a groove formed on the upper surface thereof to be the cooling channel 20B on the back side. As shown in FIG. 4, the groove has a shape drawn in a fan-shaped plane obtained by dividing a circle into three, and three grooves are provided. The routing shape is such that one end of the groove starts from the outer peripheral portion of the disk, and is extended in a zigzag shape in which a plurality of arcs are successively reduced concentrically from the outer peripheral portion toward the inside of the disk, and the center of the disk is formed. It has a shape communicating with the opening of the part. Efficient with this shape,
In addition, since cooling is performed from a surface having a high peripheral speed, uniform cooling can be achieved. A portion located at one end of the groove at the outer periphery of the disk is an inflow port 25 which communicates with the interlayer flow path 22 of the core layer portion 15 and in which cooling water flows into the cooling flow path 20B on the back side. The other end of the groove, which is located at the center of the disk, is a cooling water outlet 26.

【0021】以上の表層部14、芯層部15及び裏層部
16の3層は、多数のボルト28によって締め付けられ
て一体に固定されている。なお、29はリング状のパッ
キンであり、密着する層部間の水密シールをしている。
定盤12の剛性を確保するには、3層が完全に密着して
いることがよく、切れ目のない一体の材料で成形するこ
とが望ましいが、内部に細くて複雑な形状の冷却流路を
精度良く形成することは難しく、製造コストが高くつ
く。これに対して、本実施例のように3層を重ね合わせ
て形成すれば、容易且つ精度良く製造できる。なお、3
層の部材を一体化するには、本実施例のようなボルトに
よらず、真空空間内で金属面を合わせて温度を上げて両
者を接合する方法、いわゆる金属拡散による接合法を利
用してもよい。
The three layers of the surface layer 14, the core layer 15, and the back layer 16 are fastened together by a large number of bolts 28 and fixed together. Reference numeral 29 denotes a ring-shaped packing which seals water-tightly between layer portions that are in close contact with each other.
In order to secure the rigidity of the platen 12, it is preferable that the three layers are completely adhered to each other, and it is preferable that the three layers be formed of an integral material without any discontinuity. It is difficult to form with high accuracy, and the manufacturing cost is high. On the other hand, if three layers are formed in a superposed manner as in the present embodiment, it is possible to manufacture easily and accurately. In addition, 3
In order to integrate the members of the layer, instead of using bolts as in the present embodiment, using a method of joining the two by raising the temperature by joining the metal surfaces in a vacuum space, a so-called joining method by metal diffusion. Is also good.

【0022】18は表層定盤であり、定盤12上に着脱
可能に載置されている。本実施例ではクランプ19によ
って着脱可能に固定されているが、真空装置を用いて吸
着によって着脱可能に固定してもよい。表層定盤18の
表面には、布もしくはフェルト状のクロス、またはスポ
ンジもしくは短毛刷子状の部材等が固定されて研磨面1
1が構成される。このような表層定盤18を使用するの
は、研磨面11の保守管理を容易に行うためである。す
なわち、クロス等の張り替え等を行う際に、取り外して
外部で行うことができ、また、容易に交換できるためメ
インテナンスを容易にできるという利点がある。しかし
ながら、この表層定盤を用いず、定盤12の表面に直に
クロスを貼付して研磨面11を形成してもよいのは勿論
である。そのように研磨面11を形成すれば、冷却水に
よる冷却効果がより直接的に研磨面11にあらわれ、研
磨の際の摩擦熱による熱変形を抑制する意味では効果的
である。
Reference numeral 18 denotes a surface platen, which is removably mounted on the platen 12. In this embodiment, it is detachably fixed by the clamp 19, but it may be detachably fixed by suction using a vacuum device. A cloth or a felt-like cloth, a sponge or a short brush-like member is fixed to the surface of the surface platen 18, and the polishing surface 1 is fixed.
1 is configured. The reason for using such a surface platen 18 is to facilitate maintenance management of the polished surface 11. That is, there is an advantage that maintenance can be facilitated since the cloth can be detached and replaced externally when the cloth or the like is replaced. However, it is a matter of course that the polishing surface 11 may be formed by directly attaching a cloth to the surface of the surface plate 12 without using the surface layer surface plate. When the polishing surface 11 is formed in such a manner, the cooling effect by the cooling water appears more directly on the polishing surface 11, and is effective in suppressing thermal deformation due to frictional heat during polishing.

【0023】定盤12及び表層定盤18は、セラミック
ス板又は金属板によって形成すればよい。定盤12をセ
ラミックス板とすれば、重量を軽減できると共に剛性を
向上できる。例えば、定盤12がアルミナを主成分とす
るセラミックスであれば、密度が約3.9g/ccであ
り、鋳鉄材の密度(約7.9g/cc)の約半分にな
る。従って、重量を約半分にすることができ、クロスの
張り替えの際等の保守管理作業が容易にできるようにな
る。セラミックスとしては、アルミナを主成分とするも
のの他に、炭化ケイ素を主成分とするもの等がある。な
お、定盤の材質は、上記のように剛性が高いと共に、熱
膨張率が小さく、熱伝導率も高いものが、変形しにくい
ため好適である。
The platen 12 and the surface plate 18 may be formed of a ceramic plate or a metal plate. If the surface plate 12 is a ceramic plate, the weight can be reduced and the rigidity can be improved. For example, if the platen 12 is a ceramic mainly composed of alumina, the density is about 3.9 g / cc, which is about half of the density (about 7.9 g / cc) of the cast iron material. Therefore, the weight can be reduced to about half, and the maintenance management work at the time of replacing the cloth or the like can be easily performed. As ceramics, there are ceramics mainly composed of silicon carbide in addition to those mainly composed of alumina. The material of the platen is preferably high in rigidity as described above, has a small coefficient of thermal expansion and a high thermal conductivity, because it is difficult to deform.

【0024】30は基体であり、ベアリング32を介し
て定盤12を軸線を中心に回転自在に支持している。3
4は駆動軸であり、定盤12の裏面に固定され、定盤1
2の面に直交する方向(図2では下方)に延びて設けら
れている。この駆動軸34は、定盤12の下方に配設さ
れた回転駆動モータに連結されており、その駆動力によ
って研磨用定盤10を軸線を中心に回転させる。また、
定盤12を揺動運動させるように、基体30自体が他の
基礎部材に揺動可能に支持されていてもよい。揺動運動
としては、直線的な往復運動や、自転しない旋回運動の
ような運動を採用すればよく。これにより、ウェーハを
より均一に研磨することが可能になる。
Reference numeral 30 denotes a base, which supports the platen 12 via a bearing 32 so as to be rotatable about an axis. 3
Reference numeral 4 denotes a drive shaft, which is fixed to the back surface of the surface plate 12;
2 is provided to extend in a direction perpendicular to the surface 2 (downward in FIG. 2). The drive shaft 34 is connected to a rotary drive motor disposed below the platen 12, and rotates the polishing platen 10 about an axis by its driving force. Also,
The base 30 itself may be swingably supported by another base member so that the platen 12 swings. As the swinging motion, a motion such as a linear reciprocating motion or a turning motion that does not rotate may be adopted. This makes it possible to polish the wafer more uniformly.

【0025】40は給水管路であり、冷却水を表面側の
冷却流路20Aへ供給するように、その表面側の冷却流
路20Aに連通している。また、42は排出管路であ
り、裏面側の冷却流路20Bから排出するように、その
裏面側の冷却流路20Bに連通している。そして、給水
管路40及び排出管路42には、冷却水の給排手段が接
続されている。例えば、給水管路40には冷却水供給源
を接続し、排出管路42には吸引装置を接続して冷却流
路20に冷却水を循環させてもよい。吸引装置としては
トロコイドポンプを利用できる。吸引による場合は真空
度をいくら上げても一気圧にしかならず、研磨定盤の変
形が一定以上にならないという利点がある。但し、高圧
流を利用しても良いのは勿論である。
Numeral 40 denotes a water supply pipe, which communicates with the cooling channel 20A on the front side so as to supply cooling water to the cooling channel 20A on the front side. Reference numeral 42 denotes a discharge pipe, which communicates with the cooling channel 20B on the back side so as to be discharged from the cooling channel 20B on the back side. The water supply pipe 40 and the discharge pipe 42 are connected to a cooling water supply / discharge unit. For example, a cooling water supply source may be connected to the water supply line 40, and a suction device may be connected to the discharge line 42 to circulate the cooling water through the cooling channel 20. A trochoid pump can be used as the suction device. In the case of suction, there is an advantage that no matter how much the degree of vacuum is raised, only one atmosphere is attained, and the deformation of the polishing platen does not exceed a certain level. However, it goes without saying that a high-pressure flow may be used.

【0026】給水管路40及び排出管路42は、駆動軸
34に内部を通り、その駆動軸34下部に設けられたデ
ィストリビュータ部を介して前記の冷却水の給排手段に
接続されている。なお、ディストリビュータは、駆動軸
34が回転しても、冷却水を漏らさず、給水管路40及
び排出管路42を介して給排する機構であり、公知の技
術を利用できる。また、45はカバーであり、定盤12
側面に裏面側へ延びた形状に装着されており、スラリー
の飛散避けであり、定盤12を回転させる回転駆動機構
を保護している。
The water supply line 40 and the discharge line 42 pass through the inside of the drive shaft 34 and are connected to the cooling water supply / discharge means via a distributor section provided below the drive shaft 34. The distributor is a mechanism that supplies and discharges the cooling water through the water supply pipe 40 and the discharge pipe 42 without leaking the cooling water even when the drive shaft 34 rotates, and can use a known technique. Reference numeral 45 denotes a cover,
It is mounted on the side surface so as to extend to the back surface side to prevent the slurry from scattering and protects the rotation drive mechanism that rotates the platen 12.

【0027】以上に説明してきた研磨用定盤は、被研磨
物がウェーハであるウェーハの研磨装置に好適に利用で
きるものである。ウェーハの研磨装置には、ポリシング
装置或いはラップ装置がある。また、以上の実施例のよ
うに上面が研磨面となる定盤としてのみに限られること
はなく、下面が研磨面となる定盤としても利用できる。
また、被研磨物の両面を研磨する両面研磨機の上下の定
盤に用いることができるのも勿論である。さらに、単数
のウェーハを研磨する枚葉式の装置に用いることに限ら
ず、複数のウェーハを一枚のプレートで保持して研磨す
るバッチ式の装置にも用いることができるのは勿論であ
る。以上、本発明の好適な実施例について種々述べてき
たが、本発明はこの実施例に限定されるものではなく、
発明の精神を逸脱しない範囲内でさらに多くの改変を施
し得るのは勿論のことである。
The polishing surface plate described above can be suitably used for a polishing apparatus for a wafer whose object is a wafer. As a wafer polishing apparatus, there is a polishing apparatus or a lapping apparatus. Further, the present invention is not limited to a surface plate having an upper surface serving as a polished surface as in the above-described embodiment, and may be used as a surface plate having a lower surface serving as a polished surface.
Further, it is needless to say that the present invention can be used for upper and lower platens of a double-side polishing machine for polishing both surfaces of a workpiece. Further, it is needless to say that the present invention is not limited to use in a single-wafer apparatus for polishing a single wafer, but may be used in a batch-type apparatus for holding and polishing a plurality of wafers with one plate. As described above, various preferred embodiments of the present invention have been described, but the present invention is not limited to these embodiments.
Of course, many more modifications can be made without departing from the spirit of the invention.

【0028】[0028]

【発明の効果】本発明の研磨用定盤によれば、定盤の内
部に、厚さ方向に2層に冷却液が流通する冷却流路を形
成してあるため、冷却液を流すことで定盤を全体的にバ
ランス良く且つ効率良く冷却できる。そして、芯層部の
厚さが、表層部及び裏層部の厚さよりも厚いことで、2
層の冷却流路の間にあって均一温度に保たれ、熱変形が
好適に抑制された芯層部の剛性を利用し、表層部及び裏
層部の変形を抑制でき、定盤全体としての変形を好適に
抑制できる。このため、本発明によれば、定盤の平坦度
を好適に維持し、研磨精度を向上できると共に、研磨速
度を速めて生産性を向上できるという著効を奏する。
According to the polishing platen of the present invention, a cooling flow path through which the cooling liquid flows in two layers in the thickness direction is formed inside the platen. The surface plate can be cooled as a whole with good balance and efficiency. Further, since the thickness of the core layer is larger than the thickness of the surface layer and the back layer, 2
Utilizing the rigidity of the core layer, which is kept at a uniform temperature between the cooling passages of the layers and the thermal deformation is suitably suppressed, the deformation of the surface layer and the back layer can be suppressed, and the deformation of the entire surface plate can be reduced. It can be suppressed suitably. For this reason, according to the present invention, it is possible to maintain the flatness of the surface plate appropriately, improve the polishing accuracy, and increase the polishing rate to improve the productivity.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明にかかる研磨用定盤の原理を模式的に説
明する斜視断面図である。
FIG. 1 is a perspective sectional view schematically illustrating the principle of a polishing platen according to the present invention.

【図2】本発明にかかる研磨用定盤の一実施例を示す断
面図である。
FIG. 2 is a cross-sectional view showing one embodiment of a polishing platen according to the present invention.

【図3】図2の実施例の表面側の冷却流路を示すX−X
線断面図である。
FIG. 3 is a cross-sectional view illustrating a cooling channel on the front side of the embodiment of FIG. 2;
It is a line sectional view.

【図4】図2の実施例の裏面側の冷却流路を示すY−Y
線断面図である。
FIG. 4 is a YY diagram showing a cooling channel on the back surface side of the embodiment of FIG. 2;
It is a line sectional view.

【図5】本発明にかかる研磨用定盤が装着されるポリシ
ング装置の模式図である。
FIG. 5 is a schematic view of a polishing apparatus to which the polishing surface plate according to the present invention is attached.

【図6】従来の研磨用定盤を模式的に説明する斜視断面
図である。
FIG. 6 is a perspective sectional view schematically illustrating a conventional polishing platen.

【図7】従来の研磨用定盤の冷却流路を示す断面図であ
る。
FIG. 7 is a cross-sectional view illustrating a cooling channel of a conventional polishing platen.

【符号の説明】[Explanation of symbols]

10 研磨用定盤 11 研磨面 12 定盤 13 裏面 14 表層部 15 芯層部 16 裏層部 20A 表面側の冷却流路 20B 裏面側の冷却流路 22 層間流路 28 ボルト 40 給水管路 42 排水管路 DESCRIPTION OF SYMBOLS 10 Polishing surface plate 11 Polishing surface 12 Surface plate 13 Back surface 14 Surface layer portion 15 Core layer portion 16 Back layer portion 20A Cooling flow path on front side 20B Cooling flow path on back side 22 Interlayer flow path 28 Volt 40 Water supply pipe 42 Drainage Pipeline

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 被研磨物の被研磨面が押し当てられて該
被研磨面を平坦に研磨する研磨面が、表面の側に形成さ
れるように設けられた定盤を備える研磨用定盤におい
て、 前記定盤の内部に、厚さ方向に2層に冷却液が流通され
る冷却流路が形成され、該2層の冷却流路の層間隔の部
分に相当する芯層部の厚さが、前記表面と該表面の側の
冷却流路との層間隔の部分に相当する表層部の厚さ、及
び前記表面の反対の面である裏面と該裏面の側の冷却流
路との層間隔の部分に相当する裏層部の厚さよりも厚い
ことを特徴とする研磨用定盤。
1. A polishing surface plate provided with a surface plate provided such that a surface to be polished is pressed against the surface to be polished and the surface to be polished is polished flat. In the surface plate, a cooling channel through which a cooling liquid flows in two layers in the thickness direction is formed inside the surface plate, and a thickness of a core layer portion corresponding to a portion of a layer interval of the two layers of cooling channels is provided. Has a thickness of a surface layer portion corresponding to a portion of a layer interval between the front surface and the cooling channel on the front surface side, and a layer of a back surface opposite to the front surface and a cooling channel on the back surface side. A polishing platen having a thickness greater than a thickness of a back layer portion corresponding to a space portion.
【請求項2】 前記2層の冷却流路は相互に連通し、冷
却液は、前記表面の側の冷却流路、前記裏面の側の冷却
流路の順に流れることを特徴とする請求項1記載の研磨
用定盤。
2. The cooling passage of the two layers communicates with each other, and the cooling liquid flows in the order of the cooling passage on the front surface side and the cooling passage on the back surface side. Polishing surface plate as described.
【請求項3】 前記芯層部、前記表層部、及び前記裏層
部が別々に成形され、3層が積層されて形成されたこと
を特徴とする請求項1又は2記載の研磨用定盤。
3. The polishing platen according to claim 1, wherein the core layer, the surface layer, and the back layer are formed separately, and three layers are laminated. .
【請求項4】 前記被研磨物がウェーハであり、該ウェ
ーハをポリシング或いはラッピングする研磨装置に設け
られることを特徴とする請求項1、2又は3記載の研磨
用定盤。
4. The polishing surface plate according to claim 1, wherein the object to be polished is a wafer, and the polishing object is provided in a polishing apparatus for polishing or lapping the wafer.
JP11463397A 1997-05-02 1997-05-02 Polishing surface plate Pending JPH10296619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11463397A JPH10296619A (en) 1997-05-02 1997-05-02 Polishing surface plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11463397A JPH10296619A (en) 1997-05-02 1997-05-02 Polishing surface plate

Publications (1)

Publication Number Publication Date
JPH10296619A true JPH10296619A (en) 1998-11-10

Family

ID=14642726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11463397A Pending JPH10296619A (en) 1997-05-02 1997-05-02 Polishing surface plate

Country Status (1)

Country Link
JP (1) JPH10296619A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000354956A (en) * 1999-06-15 2000-12-26 Ibiden Co Ltd Table for wafer polishing device, polishing method of semiconductor wafer, manufacture of semiconductor wafer and laminated ceramic structural body
JP2001062711A (en) * 1999-08-26 2001-03-13 Ibiden Co Ltd Table for wafer polishing device and manufacture thereof
WO2001056742A1 (en) * 2000-01-31 2001-08-09 Shin-Etsu Handotai Co., Ltd. Polishing device and method
CN109015343A (en) * 2017-06-08 2018-12-18 创技股份有限公司 Grinding device
JP2019201086A (en) * 2018-05-15 2019-11-21 東京エレクトロン株式会社 Processing device, component, and temperature control method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000354956A (en) * 1999-06-15 2000-12-26 Ibiden Co Ltd Table for wafer polishing device, polishing method of semiconductor wafer, manufacture of semiconductor wafer and laminated ceramic structural body
JP2001062711A (en) * 1999-08-26 2001-03-13 Ibiden Co Ltd Table for wafer polishing device and manufacture thereof
WO2001056742A1 (en) * 2000-01-31 2001-08-09 Shin-Etsu Handotai Co., Ltd. Polishing device and method
KR100729022B1 (en) * 2000-01-31 2007-06-14 신에쯔 한도타이 가부시키가이샤 Apparatus and method for polishiing
CN109015343A (en) * 2017-06-08 2018-12-18 创技股份有限公司 Grinding device
KR20180134288A (en) * 2017-06-08 2018-12-18 스피드팸 가부시키가이샤 Polishing device
JP2018202580A (en) * 2017-06-08 2018-12-27 スピードファム株式会社 Polishing device
JP2019201086A (en) * 2018-05-15 2019-11-21 東京エレクトロン株式会社 Processing device, component, and temperature control method

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