JPH10284981A - Surface acoustic wave device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small-sized surface acoustic wave device with a wide pass band by using LTG single crystal as a surface acoustic wave piezo-electric substrate and permitting an Euler's angle to exist in a specified area when the segment angle of the substrate and the surface acoustic wave propagating direction of the substrate are expressed by Euler's angle display. SOLUTION: The surface acoustic wave device is provided with a pair of interdigital electrodes 2 on a substrate 1 surface and the substrate 1 is single crystal expressed by a chemical formula La3Ta0.5Ga5.5012(LTG). When the segment angle from the LTG crystal of the substrate 1 and the surface acoustic wave propagating direction of the substrate 1 are expressed by Euler's angle display as ϕ, θ and ψ, the Euler's angle exists in the area of ϕ=85-95 deg., θ=85-95 deg. and ψ=-40-40 deg.. SAW is delayed and an electric and mechanical coupling coefficient is made to be large in the substrate 1 so that the excellent characteristic is obtained as the surfaces acoustic wave filter of an intermediate frequency in a mobil communication terminal equipment especially.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device having interdigital electrodes on a single crystal substrate.

[0002]

2. Description of the Related Art In recent years, mobile communication terminals such as mobile phones have rapidly become widespread. It is desired that the terminal be particularly small and lightweight because of its portability. In order to reduce the size and weight of the terminal, it is essential that the electronic components used in the terminal are also small and lightweight. A surface acoustic wave device, that is, a surface acoustic wave filter is frequently used. The surface acoustic wave device has a structure in which interdigital electrodes for exciting, receiving, reflecting, and propagating surface acoustic waves are formed on the surface of a piezoelectric substrate.

[0003] Important characteristics of a piezoelectric substrate used in a surface acoustic wave device include a surface acoustic wave velocity (SAW velocity) and an electromechanical coupling coefficient (k2). FIG. 4 shows the characteristics of a conventionally known representative substrate for a surface acoustic wave device. These characteristics are described in Yasutaka Shimizu, "Propagation Characteristics of Surface Acoustic Wave Materials and Present Situation of Utilization," IEICE Transactions A, Vol. J76-A, No. 2, pp. 129-1
37 (1993). Hereinafter, the piezoelectric substrates for various surface acoustic wave devices are distinguished by the symbols in FIG.

[0004] As can be seen from FIG.
6LT has a SAW speed of more than 4000m / s,
It is suitable for constructing a filter for a high-frequency part of a terminal. The reason will be described below. For mobile communication represented by mobile phones, various systems have been put into practical use in various countries around the world, and any system has a frequency of 1 GHz.
Front and rear frequencies are used. Therefore, the center frequency of the filter used in the terminal high frequency unit is about 1 GHz. In the case of a surface acoustic wave filter, the center frequency is substantially proportional to the SAW speed of the piezoelectric substrate used, and substantially inversely proportional to the width of the electrode finger formed on the substrate. Therefore, in order to increase the frequency, a substrate having a high SAW speed, for example, 6
4LN and 36LT are preferred. The high-frequency filter is required to have a wide band having a pass bandwidth of 20 MHz or more. In order to achieve a wide band, the electromechanical coupling coefficient k2 of the piezoelectric substrate must be large. For this purpose, 64LN and 36LT are frequently used.

On the other hand, as an intermediate frequency of a mobile terminal, a frequency band of 70 to 300 MHz is used. When a filter having this frequency band as a center frequency is configured using a surface acoustic wave, the 64LN, 3
When 6LT is used, the width of the electrode finger formed on the substrate is
The filter needs to be much larger than the filter used in the high frequency section.

The above will be described by estimating specific numerical values. The electrode finger width d of the surface acoustic wave converter constituting the surface acoustic wave filter and the center frequency f0 of the surface acoustic wave filter
And the SAW speed V of the piezoelectric substrate to be used, approximately f0 = V / (4d) (1) holds. When a surface acoustic wave filter having a center frequency of 1 GHz is configured with a SAW speed of 4000 m / s, the electrode finger width is calculated as d = 4000 (m / s) / (4 × 1000 (MHz)) from the above equation (1). 1μ
m. On the other hand, when an intermediate frequency filter having a center frequency of 100 MHz is formed using a piezoelectric substrate having a SAW speed of 4000 m / s, the electrode finger width required for this is d = 4000 (m / s) / (4 × 100 ( MHz)) = 10μ
m, and the required electrode finger width is ten times as large as that of the high-frequency filter. Increasing the electrode finger width means that the surface acoustic wave device itself also increases. Therefore, in order to reduce the size of the surface acoustic wave intermediate frequency filter, it is necessary to use a piezoelectric substrate having a small SAW speed V as apparent from the above equation (1).

An ST crystal shown in FIG. 4 is known as a piezoelectric substrate having a relatively low SAW speed. Since the effective SAW speed of the piezoelectric substrate is affected by the electrode finger structure formed on the substrate, a simple statement cannot be made. However, in the case of ST quartz, it is known that the SAW speed is 3130 to 3155 m / s. Have been. This value is 64LN, 36LT
About ／ of that of the above, which is advantageous for miniaturization.

For the above-mentioned reason, the surface acoustic wave filter for the intermediate frequency of the mobile communication terminal has heretofore mostly been constituted by the ST quartz piezoelectric substrate. As is clear from FIG. 4, the electromechanical coupling coefficient k2 of the ST quartz substrate is 0.1
7%, which is particularly small among various piezoelectric substrates. The fact that k2 is small means that only a filter having a very narrow passband can be constructed.

[0009] Analog systems have been mainly used as mobile communication systems, that is, portable telephone systems, and their channel width is 1 in the domestic NTT specification.
Since the band was very narrow, 2.5 kHz, 30 kHz in the AMPS specification in the United States, and 25 kHz in the TACS specification in Europe, the electromechanical coupling coefficient k2 of the ST quartz substrate was not a problem. However, in recent years, digital mobile communication systems have been developed from the viewpoints of effective use of frequency resources, compatibility with digital data communication, and the like.
It has been put into practical use and is rapidly spreading. The channel width of this digital system is very wide, for example, 200 kHz in the European cellular phone GSM system and 1.7 MHz in the cordless telephone DECT system. When such a broadband intermediate frequency filter is formed of a surface acoustic wave filter, it is difficult to realize the ST crystal substrate.

[0010]

As described above,
Conventionally, in a surface acoustic wave device, when a piezoelectric substrate having a large electromechanical coupling coefficient is used, the pass band can be widened,
There is a problem that the element size is increased due to the high SAW speed of the substrate. On the other hand, when a substrate having a relatively low SAW speed is used to reduce the size of the element, the electromechanical coupling coefficient is too small. There is a problem that the pass band cannot be widened, and in any case, sufficient characteristics as a surface acoustic wave filter for an intermediate frequency cannot be obtained. An object of the present invention is to provide a small surface acoustic wave device having a wide pass band.

[0011]

The above object is achieved by one of the following constitutions (1) and (2). (1) An interdigital electrode is provided on the substrate surface, the substrate is a single crystal represented by the chemical formula La3Ta0.5Ga5.5O14 (LTG), the cutout angle of the substrate from the LTG crystal, and the surface acoustic wave of the substrate. A surface acoustic wave device in which φ, θ, and 存在 exist in the following region I when the propagation direction is represented by (φ, θ, ψ) in Euler angles. Region I φ = 85 to 95 ° θ = 85 to 95 ° ψ = -40 to 40 ° (2) The substrate has interdigital electrodes on the surface of the substrate, and the substrate is represented by a chemical formula La3Ta0.5Ga5.5O14 (LTG). When the cutout angle of the substrate from the LTG crystal and the direction of surface acoustic wave propagation of the substrate are expressed as (φ, θ, ψ) in Euler angles, φ, θ, and に fall into the following region II. Existing surface acoustic wave device. Region II φ = -5-5 ° θ = 85-95 ° ψ = -40-40 °

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A specific example of the present invention will be described in detail with reference to the drawings. FIG. 1 shows a configuration example of the surface acoustic wave device according to the first embodiment, and FIG. 2 shows a configuration example of the surface acoustic wave device according to the second embodiment. These surface acoustic wave devices have a pair of interdigital electrodes 2 on the surface of a substrate 1. As the substrate 1, an X-cut LTG single crystal is used in the first embodiment, and a Y-cut LTG single crystal is used in the second embodiment. The X-cut LTG single crystal was cut out perpendicular to the X-axis of the crystal as shown in FIG. 1, and the Y-cut LTG single crystal was cut out perpendicular to the Y-axis of the crystal as shown in FIG. Things. The Euler angle display defines the cutout angle (cut plane) of the single crystal substrate and the propagation direction of the surface acoustic wave. X cut LTG
The single crystal is represented by Euler angle notation (90,90, ψ), and Y
The cut LTG single crystal is represented by (0,90, ψ) in Euler angle notation. When the cutout angle and the propagation direction in the surface acoustic wave device of the present invention are represented by (φ, θ, ψ), φ, θ
And ψ are in regions I and II above.

The LTG single crystal used in the present invention is generally represented by the chemical formula La3Ta0.5Ga5.5O14, and is composed of a conventionally known langasite (La3Ga5SiO1).
(4) Preliminary proceedings of the 44th Federation of Applied Physics-related lectures NO.1 p213
Lecture NO.28p-N-1). In the present invention, when applying the LTG single crystal to the substrate of the surface acoustic wave device, the cutting direction of the crystal and the propagation direction of the surface acoustic wave are selected to realize the above-described surface acoustic wave device with high characteristics. LTG single crystal is
Inevitable impurities such as Al, Zr, Fe, Ce, N
d, Pt, Ca and the like may be contained. The method for producing the LTG single crystal is not particularly limited, and it may be produced by a normal single crystal growing method, for example, a CZ method.

The dimensions of the substrate are not particularly limited, but generally the surface wave propagation direction is about 4 to 10 mm, the direction orthogonal thereto is about 2 to 4 mm, and the thickness is about 0.2 to 0.4 mm.

The interdigital electrodes 2 formed on the substrate 1
It is a thin film electrode for exciting, receiving, reflecting, and propagating surface acoustic waves, and is formed in a periodic stripe shape. The interdigital electrodes are patterned so that the surface acoustic wave propagation direction is the above-described predetermined direction. The interdigital electrodes
It may be formed by vapor deposition or sputtering using Au, Al, or the like. The electrode finger width of the interdigital electrode may be appropriately determined according to the frequency to which the surface acoustic wave device is applied. In a preferable frequency band to which the present invention is applied, generally, 2 to 2 is used.
It is about 10 μm.

The surface acoustic wave device of the present invention is generally suitable for a filter in a frequency band of 10 to 500 MHz, particularly 10 to 300 MHz. Further, since the surface acoustic wave device of the present invention has a low SAW speed, it is also useful for downsizing a surface acoustic wave delay element.

[0017]

The present invention will be described below with reference to examples.

Example 1 First Aspect An LTG single crystal grown by the CZ method was used as a crystal X as shown in FIG.
The substrate was cut out perpendicular to the axis to obtain an X-cut substrate. A surface acoustic wave converter consisting of a pair of interdigital electrodes was formed on the surface of the substrate to obtain a surface acoustic wave device. The interdigital electrode is formed by vapor deposition of Al on both the input side and the output side, the thickness is 0.3 μm, the electrode finger width d is 15 μm, and the electrode pitch (4
d) was 60 μm, and the number of electrode finger pairs was 20.

In this device, when the propagation direction of the surface acoustic wave is (90, 90, ψ) in Euler angle representation, the value of ψ is changed from −50 ° to 50 ° every 10 °, and these 11
SAW velocity and electromechanical coupling coefficient k in the direction of the point
2 was measured. The SAW speed was obtained from the center frequency of the filter, and the electromechanical coupling coefficient k2 was obtained by measuring the two-terminal admittance of surface acoustic wave conversion, and from this, using a well-known Smith equivalent circuit model. The results are shown in FIG.

As apparent from FIG. 3, when the surface acoustic wave propagation direction is in a range of ± 40 ° from the Y axis, that is, (90, 90, ψ) in Euler angle display, ψ is −40 to 40 °. If it is, the SAW speed is as low as 2700 m / s or less, and
Since the electromechanical coupling coefficient is 0.17% or more, which is larger than that of the conventional ST crystal, it is advantageous for downsizing and broadening the surface acoustic wave device. Further, when the propagation direction of the surface acoustic wave is in the range of ± 20 ° from the Y axis, that is, (90, 90, ψ) in Euler angle display, if ψ is −20 to 20 °, the SAW speed is 2600 m / s. Since the electromechanical coupling coefficient is 0.7% or more, which is four times or more as large as that of the conventional ST crystal, it is advantageous for downsizing and broadening the surface acoustic wave device.

<Example 2: Second embodiment> The LTG single crystal grown by the CZ method was replaced with a crystal Y as shown in FIG.
The substrate was cut out perpendicular to the axis to obtain a Y-cut substrate. Interdigital electrodes were formed on the surface of the substrate in the same manner as in Example 1 to obtain a surface acoustic wave device.

In this device, when the propagation direction of the surface acoustic wave is represented by (0, 90, で) in Euler angles, the value of ψ is changed from −60 ° to 60 ° in increments of 10 °.
SAW velocity and electromechanical coupling coefficient k in the direction of the point
2 was measured. The results are shown in FIG.

In FIG. 3, when the propagation direction of the surface acoustic wave is in the X-axis direction, that is, when (0, 90, ψ) is expressed in Euler angles, if ψ = 0 °, the SAW speed may become the slowest. Recognize. Therefore, it is understood that the surface acoustic wave propagates with energy concentrated on the X axis. That is, Y
A surface acoustic wave device that propagates in the X direction on the cut substrate ((0,90,0) in Euler angle) is preferable because the spread of energy during propagation of the surface acoustic wave is suppressed, and the loss is reduced. Moreover, when the propagation direction is near the X-axis, the SAW speed is smaller than that of the first embodiment and 2500 m /
s or less, which is more advantageous for miniaturization of the surface acoustic wave device. For the electromechanical coupling coefficient,
When the surface acoustic wave propagation direction is in a range of ± 40 ° from the X axis, that is, (0,90, ψ) in Euler angle display, ψ = -4
If it is 0 to 40 °, it becomes 0.3% or more, and the conventional ST
Since the value is at least twice as large as that of quartz, the surface acoustic wave device can be reduced in size and broadened. Further, when the surface acoustic wave propagation direction is in a range of ± 20 ° from the X axis, that is, (0,90, ψ) in Euler angle display, ψ = −20 to 20
°, it is 0.8% or more, which is about five times the value of the conventional ST crystal, and can be increased. Therefore, the second
In the surface acoustic wave device according to the aspect, the size can be further reduced and the pass band can be widened.

The effects of the present invention are apparent from the results of the above embodiments.

[0025]

According to the first aspect of the present invention, an LTG single crystal is used as a surface acoustic wave piezoelectric substrate, and the cutout angle of the substrate and the direction of propagation of the surface acoustic wave are expressed by Euler angles (φ, θ). , ψ), φ, θ and ψ are within the region I.

In a second aspect of the present invention, an LTG single crystal is used as the piezoelectric substrate for surface acoustic waves, and the cutout angle of the substrate and the direction of propagation of the surface acoustic waves are expressed by Euler angles (φ, θ). , ψ), φ, θ and ψ are within the region II.

In either of the first and second embodiments, the substrate has a low SAW speed and a large electromechanical coupling coefficient, so that the surface acoustic wave device can be downsized and the pass band width as a filter can be wide. In particular, good characteristics can be obtained as an intermediate frequency surface acoustic wave filter of a mobile communication terminal.

Further, in the second aspect, since the surface acoustic wave energy is concentrated in the propagation direction, a surface acoustic wave device having a very low loss can be obtained.

[Brief description of the drawings]

FIG. 1 is a perspective view illustrating a configuration example of a surface acoustic wave device according to a first embodiment of the present invention.

FIG. 2 is a perspective view illustrating a configuration example of a surface acoustic wave device according to a second embodiment of the present invention.

FIG. 3 is a table showing characteristics of the surface acoustic wave device according to the present invention.

FIG. 4 is a table showing characteristics of a typical substrate for a conventional surface acoustic wave device.

[Explanation of symbols]

 1 substrate 2 interdigital electrode

Claims (2)

[Claims] 1. An interdigital electrode on a surface of a substrate, wherein the substrate is a single crystal represented by a chemical formula of La3 Ta0.5 Ga5.5 O14 (LTG), and a cutout angle of the substrate from the LTG crystal and an elasticity of the substrate. A surface acoustic wave device in which φ, θ, and 存在 exist in the following region I when the propagation direction of the surface wave is represented by (φ, θ, ψ) in Euler angles. Area I φ = 85 to 95 ° θ = 85 to 95 ° ψ = -40 to 40 ° 2. A substrate having interdigital electrodes on the surface of the substrate, wherein the substrate is a single crystal represented by the chemical formula La3Ta0.5Ga5.5O14 (LTG), and the cut-out angle of the substrate from the LTG crystal and the elasticity of the substrate. A surface acoustic wave device in which φ, θ, and 存在 are in the following region II when the surface wave propagation direction is represented by (φ, θ, ψ) in Euler angles. Region II φ = -5-5 ° θ = 85-95 ° ψ = -40-40 °