JPH10273788A - Shape generating device using radial reaction - Google Patents

Abstract

PROBLEM TO BE SOLVED: To machine a large aperture diameter lens by plasma CVM. SOLUTION: A space 146 for machining is partitioned from a driving space 147 by partition mechanisms (a cylindrical barrier 32 and a disk barrier 33). A gas-tight vessel 47 constituting this space 146 and the partition mechanisms 32, 33 as well as a supporting section 21 are conductivity connected. A contactor 31 is fixed at its one end to the disk barrier 33 and the other end thereof slides the inner flank of the cylindrical barrier 32, thereby maintaining the conduction even if the disk barrier 33 moves vertically. The contactor 51 is fixed at its one end to the supporting section 21 and the other end thereof slides atop the disk barrier 33, thereby maintaining the conduction even if the supporting section 21 moves horizontally or turns.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus utilizing a radical reaction, and more particularly to a processing apparatus suitable for manufacturing an aspherical lens used for an optical product such as a camera, a microscope and a semiconductor manufacturing apparatus. Related to the device.

[0002]

2. Description of the Related Art In recent years, as a machining method that does not damage a machined surface unlike machining, while having machining efficiency and controllability for shape creation comparable to conventional machining methods, for example, A distortion-free processing method utilizing a radical reaction as described in Japanese Patent Application Laid-Open No. 1-125829 has been proposed. Among these processing methods, those using plasma for generating radicals are particularly plasma CV.
It is called M (Chemical Vaporization Machining) (Mori et al., Proceedings of the Japan Society for Precision Engineering Spring Meeting, p. 637, published in 1992).

[0003] This plasma CVM is a processing method based on the following principle. That is, first, a plasma is generated on the electrode under a high pressure, and a reaction gas having a high electronegativity such as halogen is supplied to the plasma. Then, the molecules of the reaction gas are dissociated into radicals having high reactivity. Note that as the reaction gas, a substance whose radical reacts with a substance constituting the surface of the workpiece and a reaction product becomes a gas is used. For this reason, when the generated reactive gas radicals come into contact with the surface of the workpiece, a reaction occurs between them, and the constituents on the surface of the workpiece are removed by vaporization or sublimation of the reaction product, and the surface shape changes. . Note that the vaporized or sublimated volatile substance is hereinafter referred to as a generated gas.

In this processing method, radicals having a higher concentration than before can be generated by generating plasma under a high pressure, so that a high processing speed comparable to mechanical processing can be obtained. In addition, since plasma is generated under a high pressure, the plasma can be localized only around the electrode having a high electric field intensity. Therefore, the processing region can be limited to the vicinity of the processing electrode, and processing with extremely high spatial resolution depending on the electrode shape can be achieved. In addition, mechanical processing uses physical phenomena such as plastic deformation and brittle fracture, which causes damage to the processing surface. However, plasma CVM chemically advances the processing, so that the processing surface deteriorates. No layer is formed.

[0005] The processing by the plasma CVM is basically to remove a portion where the shape of the workpiece (pre-processed shape) is convex by comparing with a design value. Specifically, the workpiece is mounted on a positioning stage capable of numerical control (hereinafter abbreviated as NC), and is located at a position facing the processing surface and at a certain distance from the processing surface. Place the electrode in the position. Next, a voltage is applied between the electrode and the stage to generate plasma. The reaction gas is continuously supplied to the plasma. The positioning stage is moved by numerical control, the position to be removed is brought close to the electrode, the surface to be processed is held near the electrode for a time corresponding to the amount of removal, and then the workpiece is sequentially moved according to the location to be removed. By holding each processing position in the surface to be processed in the vicinity of the electrode for a predetermined time, it is possible to finally process into a desired shape. In the plasma CVM,
The removal amount (that is, the processing amount) corresponds to the processing time (that is, the time during which the surface to be processed is held near the electrode to which the voltage is applied). Therefore, when the processing amount is large, the processing time of the electrode is increased, and when the processing amount is small, the processing time is reduced.

A processing apparatus using such a plasma CVM has been proposed in, for example, Japanese Patent Application Laid-Open Nos. 4-162523, 4-246184, 8-318446.

Next, an example of a conventional plasma CVM apparatus will be described with reference to FIG. In this apparatus, the inside of the airtight container 47 of the processing apparatus is separated into two chambers, a processing space 146 and a driving space 147, through partitions 48a and 48b and a bellows 49. The partition 48b is fixed to the partition main body 48a via the bellows 49 so as to be movable up, down, left and right.

In the processing space 146, a work table 21 for holding the workpiece 24 and an electrode unit (electrode fixing part 25 and electrode 130) connected to a power supply system (high-frequency power supply 154 and matching unit 155) are provided. )When,
A nozzle (not shown) connected to the gas supply system 153 is provided. Airtight container 47 and electrode fixing part 2
5 is separated by an insulating plate. Airtight container 4
7. The partition walls 48a and 48b and the bellows 49 are all made of a conductor and are grounded. Processing of the workpiece 24 is performed by applying a high-frequency voltage to the electrode 130 to generate plasma in a reaction gas atmosphere supplied from the gas supply system 153 to the processing space 146.

In the driving space 147, the work table 2 is provided.
1 is provided with a drive mechanism 20 for moving 1 in the xyz directions. Here, the vertical direction is the z direction, the horizontal direction is the x direction, and the depth direction is the y direction. Drive mechanism 20
Is connected to the work table 21 via a connecting rod 27 that penetrates a through hole provided in the movable partition wall 48b while maintaining airtightness. The connecting rod 27 is fixed to the partition wall 28b. When the support rod 128 is displaced, the connecting rod 27, the partition wall 28b and the work table 21 are displaced within the range of the degree of freedom of the bellows 49.

In this apparatus, conduction of the wall surface forming the processing space 146 is always ensured by the bellows 49,
Even if the work table 21 is moved, conduction is not impaired. Therefore, since the high-frequency current / voltage is not transmitted to the drive mechanism side and becomes noise, accurate operation of the drive mechanism is ensured.

[0011]

However, when a bellows is used to separate the spaces 146 and 147 as described above, it is difficult to process a large-diameter lens. In order to process a large-diameter lens, the processing chamber must be enlarged, but it is very difficult to manufacture a large-diameter bellows. Therefore, it is necessary to manufacture a CVM apparatus capable of processing a large-diameter lens. Because you can't.

An object of the present invention is to provide a processing apparatus which can perform high-precision processing using a plasma CVM and can be applied to processing of a large-diameter lens.

[0013]

In order to achieve the above object, the present invention provides an airtight container made of a conductor, a reaction gas supply mechanism for supplying a reaction gas into the airtight container, and an airtight container inside the airtight container. An exhaust mechanism for discharging gas is provided, and an electrode for generating plasma, a support for supporting the workpiece, and a support for supporting the support with a support member are provided in the airtight container. And a drive mechanism for displacing the support portion, wherein a material forming the workpiece, and a radical of a reaction gas generated by the plasma, the shape generating device for changing the shape of the workpiece by reaction with the radicals. ,
There is provided an airtight container having a partition mechanism and a contact, in which an airtight container and a partition mechanism constituting a processing space, and a support portion are connected to be conductive.

The partitioning mechanism is a mechanism made of a conductor and partitions the inside of the airtight container into at least two of a working space and a driving space. The electrode and the support are arranged in the processing space. The drive mechanism is disposed in the drive space. Also,
The contact is provided between the airtight container, the support, the support member, and the partitioning mechanism, and the partitioning mechanism such that the contacted body can be relatively displaced with respect to the contactor. It is a member that connects conductively by contacting the body.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS As described above, in the present invention, the space in the airtight container is divided by the partitioning mechanism, and the conduction between the wall surface constituting the working space and the supporting portion is maintained. Thereby, during processing, high-frequency power can be prevented from being transmitted to the portion forming the outer wall of the driving space of the airtight container, so that malfunction of the driving mechanism due to noise can be avoided, and accurate operation of the driving mechanism can be ensured.

The conduction to the partition mechanism is ensured by the contacts. The contact used in the present invention may be in any form as long as the contacted body can be relatively displaced and the contact is maintained during the displacement. Examples of the contact used in the present invention include an elastic body such as a leaf spring that maintains contact by sliding, a brush, and a ball bearing that maintains contact by rolling. These contacts are
Even if the size of the two members to be connected is increased, the size of the shape creating device can be easily increased because the number of the contacts can be easily dealt with, and the size of the contact itself can be easily increased.

The contacts listed here maintain conduction when the contact portion of the contact moves parallel to the surface of the contacted object. Therefore, the relative position between two members (for example, a hermetic container and a partition mechanism) connected by a contact usually displaces parallel to one surface, but the present invention is not limited to this. Absent. For example, if a member having a contact pad provided at the tip of an elastic body such as a coil is used as a contact, and the contact is fixed to the A member and the contacted member is the B member, the contact pad slides on the B member surface. By moving, not only the displacement of the A member parallel to the surface of the B member can be maintained while the continuity is maintained, but also the contact pad abuts on the surface of the A member by an elastic body, so that the contact pad is perpendicular to the surface of the A member. The displacement of the B member in the direction is possible while maintaining conduction. Therefore, in this case, the relative position between the member A and the member B is not always displaced in parallel with respect to one surface, but such a configuration does not hinder application to the present invention.

The contact used in the present invention is, for example, (1) when it is fixed to a partition mechanism so as to be slidable on the inner wall of the airtight container, the surface of the support portion or the side surface of the support member. When the partition mechanism is fixed to the inner wall of the airtight container, the surface of the support portion, or the side surface of the support member so as to be slidable on the surface of the partition mechanism, (3) the partition mechanism is composed of two or more partition members, and There is a case where it is fixed to the second partition member so as to be slidable on the surface.

In the apparatus of the present invention, it is desirable that at least a part of the partition mechanism is connected to the drive mechanism and is displaced by the drive mechanism. For example, the drive mechanism includes a rotation drive mechanism and a straight drive mechanism, a partition mechanism is connected to the rotation drive mechanism, a partition wall that is rotated by the rotation mechanism, and a partition mechanism that is connected to the straight drive mechanism. When the partition is moved, the processing space can be turned and / or moved straight by the movement of the partition mechanism. In this case, the partition members are connected by a contact so as to be conductive and displaceable. In such a case, it is desirable that the partition mechanism is constituted by at least three partition members. In addition, in this specification, "rotation" means circular movement in either the forward or reverse direction. Further, “straight ahead” refers to a linear movement, regardless of its direction.

In the shape generating apparatus of the present invention, it is desirable that the shape around the workpiece does not change in order to obtain stable plasma. Therefore, in the present invention, the partition mechanism has a movable member that forms the bottom surface of the processing space and moves in a direction perpendicular to the bottom surface by the drive mechanism, and the support is connected to the movable member by a contact, It is desirable that the drive mechanism uniformly moves the movable member and the support portion in a direction perpendicular to the bottom surface of the processing space (hereinafter, referred to as a vertical direction). With such a configuration, the support portion moves up and down together with the movable member, so that the shape of the periphery of the support portion (that is, the periphery of the workpiece supported by the support portion) does not change. Note that the support portion may be arranged on the movable member, and may form a bottom surface of the processing space together with the movable member.

It is preferable that the partition mechanism has a door at at least one position on the wall surface for taking in and out the workpiece.

[0022]

Next, embodiments of the present invention will be described with reference to the drawings. Embodiment 1 FIG. 1 shows a lens processing plasma CVM apparatus of this embodiment. In the present embodiment, the partition mechanism is constituted by a cylindrical partition (hereinafter, referred to as a cylindrical partition) 32 and a disk-shaped partition (hereinafter, referred to as a disk partition) 33. The cylindrical partition wall 32, the support portion, that is, the work table 21 and the disk partition wall 33, and the airtight container upper plate 47a form a processing space 146, and the work table 21 and the disk partition wall 3 are formed.
3 form the bottom surface of the processing space.

In this embodiment, the outer diameter (diameter) and the height of the airtight container 47 are 2000 mm and the thickness is 10 m.
m stainless steel cylindrical container having both ends of the cylinder sealed with stainless steel disks. The upper plate 47a is an upper one of the stainless steel disks. The cylindrical partition 32 is an outer diameter (diameter), a height of 1000 mm, a thickness of 10 mm, a stainless steel cylinder, and includes only side walls. The disk partition wall 33 has a diameter of 999 m
m, a stainless steel disk having a thickness of 10 mm and a through hole having a diameter of 400 mm in the center. Work table 21
Is a stainless disk with a diameter of 399 mm and a thickness of 10 mm. The cylindrical partition 32 is provided with a door (not shown), through which the workpiece 24 can be taken in and out.

The upper edge of the cylindrical partition 32 is in contact with the inner wall of the airtight container upper plate 47a via the contact 31a. Contact 3
Reference numeral 1a denotes a brass leaf spring (width: 10 mm, length: 10 mm, thickness: 0.5 mm) having a curved center as shown in FIG. 2A, and has elasticity in the vertical direction. In the following description, the concavely curved surface of the front and back of the contact 31a is referred to as the front (front).
The surface that is convexly curved is called the back surface. The lower end 200b of the rear surface of the cylindrical partition wall contact 31a is
Are fixed side by side with no space on the outer peripheral upper edge.
If the distance between the cylindrical partition 32 and the airtight container 47 is shorter than a predetermined distance, the elastic force of the contact 31a pushes the upper rear surface 200a against the inner wall of the airtight container upper plate 47a. When the contact 31a slides on the inner wall of the upper plate 47a of the airtight container, conduction between the airtight container 47 and the cylindrical partition 32 is maintained. In addition, illustration of a contact other than a cross section was omitted in order to make a figure legible.

The outer edge of the disk partition 33 is in contact with the inner wall of the cylindrical partition 32 via the disk partition contact 31b. The contact 31b is a member similar to the contact 31a for a cylindrical partition described above, and has an upper end 200c (see FIG. 2) of the front surface thereof.
(Illustrated in (a)) are fixed side by side on the upper surface of the outer edge of the disk partition wall 33 without spacing. Lower end 2 of contact 31b
00b is pressed against the inner wall of the cylindrical partition 32 by the elastic force of the member. Therefore, even when the disk partition wall 33 moves in the vertical direction in the cylindrical partition wall 32, the lower end 200 b of the contact 31 b slides on the inner wall of the cylindrical partition wall 32, so that conduction between the cylindrical partition wall 32 and the disk partition wall 33 is established. Will be maintained.

The outer edge of the work table 21 and the disk partition 3
3 is in contact with the inner edge via a work table contact 31c. As shown in FIG. 2 (b), the contact 31c is slightly bent at the center, one side (hereinafter referred to as the outside) is curved from the bent portion, and the other side (hereinafter referred to as the inside) is flat. , Brass leaf spring (width 10mm, length 10
mm, thickness 0.5 mm), and the curved portion has elasticity in the vertical direction. In the following description, among the front and back surfaces of the contact 31c, the surface having a concave curved portion is referred to as the front (front) surface, and the convex surface is referred to as the rear surface. The worktable contactors 31c are fixed such that the inner back end 400a is arranged side by side at the outer periphery of the upper surface of the worktable 21 without any gap. If the height of the upper surface of the worktable 21 is substantially the same as the upper surface of the disk partition 33, a part of the outer back surface 400b of the contact 31c is pressed against the upper surface of the inner edge of the disk partition 33 by the elastic force of the member. Have been. Therefore, the work table 21
However, even if it rotates horizontally about the center axis of the cylindrical partition 32 as a rotation axis, the outer back surface 400b of the contact 31c is
By sliding on the upper surface, conduction between the disk partition wall 33 and the work table 21 is maintained. In this embodiment and each of the following embodiments, the rotation axis of “rotation” is all the central axis of the cylindrical partition wall 32 (or the side wall of the inner container described later), and the electrode 130 is installed coaxially with this. ing.

As described above, since the contacts 31a to 31c are made of a conductor, the walls (the airtight container upper plate 47a, the cylindrical partition wall 32, the disk partition wall 33, and the work table 21) constituting the processing space 146 are formed by the contact members. 31a to 31c are connected in a conductive manner, and the conduction is caused by the horizontal movement of the cylindrical partition wall 32, the vertical movement of the disk partition wall 33, and the work table 2
It is not impaired by any of the horizontal rotations.
With this structure, the high frequency supplied from the power supply system is transmitted only through the wall surface forming the electrode unit and the processing space 146. Therefore, in this embodiment, the workpiece 24 can be arbitrarily moved or rotated without transmitting the high frequency to the whole area in the chamber.

The configuration of the plasma CVM apparatus of this embodiment is as follows.
This will be described below. The plasma CVM apparatus according to the present embodiment includes the above-described airtight container 47, the partitions 32 and 33, and the contact 31.
a to c, in addition to the work table 21, a power supply system 29, a gas supply system 153, a positioning controller (NC controller) 161, an exhaust system 30,
A work table 21 for holding a workpiece 24,
The electrode unit 28 and the support rod 12 serving as a support member for supporting each of the partition walls 32 and 33 or the work table 21.
And a driving mechanism 2 for moving or rotating each of the partition walls 32 and 33 or the work table 21 via the support rod 12.
0.

The power supply system 29 includes the high-frequency power supply 15
4 (frequency 80 MHz, maximum output 1 kW) and matching device 15
5 is provided. The electrode unit 28 provided inside the processing space 146 is connected to the high-frequency power supply 154 via the matching unit 155, and the electrode fixing unit 25 attached to the airtight container upper plate 47a via the insulating plate 26. , And the electrode 130 fixed to the electrode fixing portion 25.

The electrode 130 is a pipe-shaped member, and is connected to the gas supply system 153 via an electrode fixing part so as to be able to communicate with the gas supply system 153. Airtight container 47 and partition walls 32, 33,
The contacts 31a to 31c and the work table 21 are all made of a conductor and are grounded. The processing of the workpiece 24 held on the work table 21 is performed by applying a high-frequency voltage to the electrode 130 by the power supply system 29 while supplying a reactive gas from the gas supply system 153 to the tip of the electrode 130. By generating plasma. At this time, the reaction gas whose flow rate is controlled by the gas supply system 153 is supplied to the pipe-shaped electrode 130.
And the plasma generated at the tip of the electrode 130 is continuously supplied from the tip of the electrode 130. The gas supply system 1 in the plasma CVM apparatus according to the embodiment
Reference numeral 53 has a function of adjusting the flow rate of the reaction gas within a range of 30 mL / min to 100 L / min. The reaction gas is
Various selections can be made according to the material of the workpiece 24.

In this embodiment, inside the airtight container 47, the airtight container 47, the partitions 32 and 33, and the contact 31a
The space outside the region surrounded by the work table 21 and the work table 21 is a drive space 147, and the drive mechanism 20 is provided therein. The drive mechanism 20 includes an x stage 20x, a y stage 20y, a z stage 20z, and a rotation motor 20r.

The x stage 20x has a y stage 20y fixedly mounted thereon, and the y stage 20y has
A z stage 20z is fixedly mounted thereon, and z
The stage 20z has a rotating motor 20r installed thereon. The y stage 20y has four support rods 1
The cylindrical partition 32 is supported via 2a (a stainless steel bar having a length of 700 mm and a diameter of 30 mm). The z stage 20z has four support bars 12b (500 mm long,
The disk partition wall 33 is supported via a stainless steel rod member having a diameter of 30 mm), and the rotating motor 20r is connected to a work table via four support rods 12c (a stainless steel rod member having a length of 300 mm and a diameter of 30 mm). 21 is supported. In addition, in order to make a figure easy to see, illustration of the support bar 12 other than a cross section was omitted.

With this structure, the x-stage 20x is connected to the y-stage 20y and the support rod 12 mounted thereon.
The cylindrical partition 32, the disk partition 33, and the work table 21 can be uniformly moved in the x direction via the a and z stages 20z, the support rod 12b, the rotation motor 20r, and the support rod 12c. Note that the x stage 20x of the present embodiment has a function of moving in the x direction with a stroke of about 450 mm.

The y stage 20y includes a support rod 12a, a z stage 20z mounted thereon, and a support rod 12a.
b, via the rotation motor 20r and the support rod 12c,
Cylindrical partition 32, disk partition 33 and work table 21
Can be uniformly moved in the y direction. The y stage 20y according to the present embodiment has a function of moving the y stage 20y in the y direction with a stroke of about 450 mm.

The z stage 20z is provided with a support rod 12b.
And the rotation motor 20r and the support rod 12c,
The disk partition wall 33 and the work table 21 can be moved uniformly in the z direction. The z stage 20z of this embodiment has a function of moving the z stage 20z in the z direction with a stroke of about 150 mm.

The rotation motor 20r can rotate the work table 21 through 360 ° via the support rod 12c.

Accordingly, in this embodiment, the positioning control unit 1
By controlling the drive mechanism 20 with the support rod 61,
The workpiece 24 can be turned and / or moved via the work table 21, and the plasma generation surface of the electrode 130 is opposed to the portion to be processed of the workpiece 24, and a desired space therebetween is provided. Can be held in intervals.

Processing space 146 and drive space 147
Is connected to an exhaust system 30. The exhaust system 30 includes an exhaust processing device 34 and valves 145 and 149. Note that the exhaust processing apparatus 34 of the present embodiment includes a processing system (not shown) for a reaction gas and a generated gas, a dry pump (not shown), and an adsorption device (not shown). The processing space 146 and the exhaust processing device 34 are connected via a valve 145, and the driving space 147 and the exhaust processing device 34 are connected via a valve 149. By adjusting the valves 145 and 149, the respective internal pressures of the space 146 and the space 147 can be controlled.

Although some of the generated gas is toxic to the human body, in the present embodiment, the generated gas is sucked by a dry pump, discharged from the processing space 146, and further adsorbed by an adsorbing device. And released into the atmosphere as harmless gas.

The positioning control unit 161 has an input / output device (I
/ O) 165, an external storage device 164 for holding a control operation program in advance, and holding data and operation results input via the input / output device 165, and a control operation read from the external storage device 164. A main storage device 163 for holding a program;
3 is an information processing apparatus including a central processing unit (CPU) 162 that executes a program stored in the CPU 3.

In the positioning control unit 161 of this embodiment, the shape data of the workpiece 24 before machining, the shape design value after machining by design, and machining conditions (input power, reaction gas concentration, reaction gas flow rate, Inputs such as a gap length, which is a distance between the workpiece and the electrode, and a chamber pressure, are received in advance, and the values are stored in the external storage device 164 together with a program for controlling the driving mechanism. As the shape data of the workpiece 24 before processing, data measured using a shape measuring device such as an interferometer or a three-dimensional measuring device is received via the input / output device 165 or a storage medium (floppy Disk, etc.)
Alternatively, when the shape data is stored in advance in another information processing device connected to the network, the data may be directly input from the shape data.

Next, the flow of processing in the positioning control section 161 will be described with reference to FIG. Note that the following processing is realized by the CPU 162 executing the instructions of the program stored in the main storage device 163. The positioning control in the CVM device of the present invention is realized by such software. The present invention is not limited to this, and may be realized by a hardware device such as hard-wired logic that executes the following steps, or a combination of a general-purpose processor and a hardware device programmed in advance.

The positioning controller 161 is provided with the input / output device 16
When a processing instruction is input via the CPU 5, a program is read from the external storage device 164 to the main storage device 163, and the following series of operations shown in FIG. 3 is executed.

First, when the start of processing is instructed, the positioning control section 161 reads the shape data of the workpiece 24 and the shape (design value) to be processed from the external storage device 164 into the main storage device 163 (step S1). 301). Next,
The positioning control unit 161 compares the read design values with the shape data, and obtains coordinates of a processing target part (hereinafter, referred to as a processing point) and a processing amount in the part (Step 3).
02).

Next, the positioning control section 161 reads the processing conditions from the external storage device 164 (step 30).
3) A processing time at each processing point is calculated based on the processing amount obtained in step 302 and the processing conditions (step 304). When processing is performed with the processing conditions kept constant, the processing amount is proportional to the residence time of the electrode on the workpiece 24.

Subsequently, the positioning control unit 161 creates an NC program from the position data of each processing point obtained in step 302 and the processing time data of each processing point obtained in step 304 (step 30).
5). That is, the positioning control unit 161 creates a path connecting the processing points under predetermined conditions, determines a moving (and staying) procedure along the created path from the processing time data at each processing point. In accordance with the procedure, an NC program which is a program for operating each drive power source of the drive mechanism 20 is created. Finally,
The positioning controller 161 waits for an execution instruction to be input via the input / output device 165 (step 306), executes the created NC program, operates the drive mechanism 20 (step 307), and executes the processing. finish.

Further, the positioning control unit 161 of this embodiment
In addition to the above-described processing, it is also possible to receive an input of a displacement amount via the input / output device 165 and control the drive mechanism 20 so that the workpiece 24 moves by the inputted displacement amount.

Next, a method for manufacturing a high-precision optical lens using the plasma CVM apparatus of this embodiment will be described. In the following, as an example, a flat work piece 24 made of quartz glass (a disc shape having a diameter of 200 mm and a thickness of 10 mm)
Is shown to form an aspheric lens.

First, the work piece 24 is moved from the door of the cylindrical partition wall 32.
Is placed in the processing space 146, placed on the work table 21 and fixed, the door of the cylindrical partition 32 is closed, and the processing space 146 and the driving space 147 are depressurized by the exhaust system 30. Next, a reaction gas in which He is mixed with several percent SF ₆ is supplied to the processing space 146 by the gas supply system 153, and the processing space 146 is supplied with several hundred to seven.
It is kept at a certain optimum value selected from the range of 60 torr.

Next, the z stage 20z of the drive mechanism 20 is operated via the positioning control unit 161 to bring the workpiece 24 close to the plasma generation surface of the electrode 130 to a predetermined distance. Via device 165,
A predetermined value is input to the positioning control unit 161 to instruct the start of processing.

Subsequently, the power supply system 29 applies high frequency power of an optimum value selected from the range of several tens to several hundreds of watts to the electrode 130. Thereby, the electrode 130
Plasma is generated at the tip. In this state, the electrode 130 is supplied from the gas supply system 153 via the electrode unit 28.
When the reaction gas is continuously supplied to the tip of the electrode 130 at a constant flow rate of about several tens of liters / minute, plasma is generated at the tip of the electrode 130. This plasma causes the reaction gas to dissociate and generate radicals as follows. It is thought to cause. 2SF ₆ → S + 6F. This radical reacts with quartz glass (SiO ₂ ) to form S
iO ₂ is removed. The radical reaction at this time is considered to be as follows. 4SiO ₂ + 4SF ₆ → 4SiF ₄ ↑ + 2SF ₄ ↑ + 4O ₂
{+ S ₂ } In this equation, “↑” indicates a gas. Note that He contained in the reaction gas does not contribute to the reaction.

Then, the execution of the NC program is instructed to the positioning control unit 161 (step 306), and when the supply of the reaction gas is started, the predetermined processing point is set at the reaction position below the electrode according to the predetermined processing amount. The driving mechanism 20 is controlled so as to stay for a time. Thereby, SiO ₂ at a predetermined processing point is removed, and a desired shape is obtained. The gas generated by the reaction is exhausted by the exhaust system 30.

FIG. 4 shows the processing result of an axisymmetric aspheric lens having a maximum processing depth of 0.5 μm obtained by processing a flat plate glass according to this embodiment. In FIG. 4, the processing amount determined by the design shape is indicated by a solid line, and the actually measured value of the processing amount in the shape after processing is indicated by a point plotted with “○”. As can be seen from this figure, according to the plasma CVM apparatus of the present embodiment, processing could be performed with an error of about 0.1 μmPV. This processing is about 5
Could be done in time.

As can be seen from the results, according to the plasma CVM apparatus of the present embodiment, even for a large-diameter lens,
High-precision machining can be easily performed without malfunction of the drive mechanism due to noise. The plasma C of the present embodiment
In the VM device, the position of the workpiece 24 is determined by the processing space 147.
, The electric characteristics are not particularly fluctuated, and very stable plasma can be obtained.

The plasma CVM apparatus described here includes:
Various variations are possible. Hereinafter, these examples will be described. These embodiments can be used by appropriately combining the configurations. The high-frequency power supply 154, the exhaust system 30, the gas supply system 153, the positioning control unit 16
1 is the same as that of the first embodiment, and is not shown. The configuration and the method of use of the plasma CVM apparatus of each embodiment are almost the same as those of the plasma CVM apparatus of the first embodiment, and only the members forming the processing space 146 and the configuration of the drive mechanism 20 for moving the same are used. Is different. Therefore, only the differences will be described below.

<Embodiment 2> In Embodiment 1, the cylindrical partition 32
The contact 31a attached to the upper end of the airtight container upper plate 4
7a by sliding on the inner wall, xy
In this embodiment, the cylindrical partition 3
With the 2 fixed to the inner wall of the airtight container 47, the movement in the xy direction while maintaining conduction was realized.

That is, as shown in FIG. 5, the partitioning mechanism of the plasma CVM apparatus of this embodiment has a cylindrical structure which is fixed to the upper surface of the inner wall of the airtight container (ie, the inner wall of the upper plate 47a of the airtight container) and which forms the side surface of the processing space. A partition space 32 and a processing space 14 having a through hole in the center and arranged in the cylindrical partition wall 32.
6 and a disk partition wall 33 that constitutes the bottom surface. Further, the support member 12 penetrates through the through-hole to support the support portion 21 arranged on the disk partition wall 33. The drive mechanism 20
A mechanism 20z for moving the disk partition 33 in the axial direction of the cylindrical partition 32 is provided. The contact between the disk partition wall 33 and the cylindrical partition wall 32 is made conductive by contact of the contact 31b fixed to the disk partition wall 33 with the cylindrical partition wall 32, and the support between the support portion 21 and the disk partition wall 33 is supported. The contact 51 fixed to the portion 21 contacts the disk partition wall 33 so as to be conductively connected. In the plasma CVM apparatus of the present embodiment, the distance between the electrode 130 and the cylindrical partition wall 32 does not change, so that the apparatus is more electrically stable than the apparatus of the first embodiment and is preferable.

Hereinafter, the plasma CVM apparatus for lens processing of this embodiment will be described in more detail. In the apparatus according to the present embodiment, the cylindrical partition wall 32 is fixed to the inner wall of the airtight container 47, and conduction between the inner wall of the disk partition wall 33 and the outer edge of the cylindrical partition wall 32 is established by the contact 31b as in the first embodiment. Is kept. In this embodiment, the sizes and materials of the airtight container 47, the cylindrical partition 32, and the contact 31b are the same as those in the first embodiment.

The disk partition wall 33 of this embodiment has a diameter of 999 m.
m, a disk-shaped stainless steel plate having a thickness of 10 mm, and a through-hole 52 having a diameter of 300 mm at the center. The work table 21 (a disk-shaped stainless steel plate having a diameter of 600 mm and a thickness of 10 mm) is larger than the through hole 52 of the disk partition wall 33, and is arranged on the disk partition wall 33 so as to cover the through hole 52. A work table contact 51 is fixed to the outer edge of the work table 21. Contact 5
1 is an S-shaped curved brass leaf spring (width 10 mm, length 20 mm, thickness 0.5 mm) shown in FIG. 2C.
The curved portion has elasticity in the vertical direction. The work table contacts 51 are fixed side by side so that one end 210a of both ends of the lower surface of the work table 51 is not spaced from the outer edge of the upper surface of the work table 21 (that is, the adjacent contacts are in contact with each other). And the other end 210b
Are pressed against the upper surface of the inner edge of the disk partition wall 33 by elastic force. Therefore, even if the work table 21 moves or rotates horizontally, the lower end 210 b of the contact 51 slides on the upper surface of the disk partition 33, so that conduction between the disk partition 33 and the work table 21 is maintained. You.

The driving mechanism 20 provided in the driving space 147 includes an x stage 20x, a y stage 20y, a z stage 20z, and a rotation motor 20r, as in the first embodiment, but the arrangement is different. That is, the x stage 20x is fixedly mounted on the y stage 20y, and the y stage 20y is fixedly mounted on the z stage 20z. The rotation motor 20r is installed on the x stage 20x.

In this embodiment, the number and arrangement of the support rods 12 are different from those of the first embodiment. That is, the z stage 20z has four support rods 12b (700 m in length).
m, the cylindrical partition wall 32 is supported via a stainless steel rod member having a diameter of 30 mm), and the rotating motor 20r is supported via four support rods 12c (a stainless steel rod member having a length of 300 mm and a diameter of 30 mm). The work table 21 is supported, but the x stage 20x and the y stage 20y
Has no support bar 12 attached thereto.

Therefore, the z-stage 20z connects the disk partition wall 33 and the work table 21 via the y-stage 20y, the x-stage 20x, the rotation motor 20r and the support rod 12c mounted thereon, and the support rod 12b. , Can be uniformly moved in the z direction. x stage 20x
The y-stage 20y moves the work table 21 in the x-direction or the y-direction through the rotation motor 20r and the support rod 12c within the through hole 52 at the center of the disk partition wall 33 within the range of the degree of freedom in which the support rod 12c can move. Can be moved. The rotation motor 20r is provided via a support rod 12c.
The work table 21 can be rotated 360 °.

Thus, in this embodiment, by controlling the driving mechanism 20 by the positioning control unit, the support rod 12
Then, the workpiece 24 is rotated and / or moved via the work table 21 so that the plasma generation surface of the electrode 130 faces the processing target portion of the workpiece 24, and the gap therebetween is maintained at a desired interval. be able to.

Also in this embodiment, similarly to the first embodiment, the walls forming the working space 146 are connected to be conductive by the contacts 31 b and 51, and this connection is made by the disk partition 33.
Of the work table 21 in the vertical direction and the horizontal movement and rotation of the work table 21. Therefore, in the present embodiment, since high-frequency power is not transmitted to the whole area in the chamber, high-precision processing can be easily performed on a large-diameter lens without malfunction of the driving mechanism due to noise.

In the plasma CVM apparatus of this embodiment, as in the first embodiment, the position of the workpiece 24 moves together with the bottom surface of the processing space 147, so that a stable plasma is obtained with little change in electrical characteristics. be able to.

<Embodiment 3> In Embodiment 2, the disk partition wall 33 is used.
In the present embodiment, the disk partition wall 33 is configured to move horizontally at the bottom of the cylindrical partition wall 32 as shown in FIG. Here, only differences from the second embodiment will be described.

The cylindrical partition wall 32 of this embodiment is the same as that of the second embodiment except that the length thereof is short (900 mm), and is fixed to the inner wall of the airtight container upper plate 47a. The disk partition wall 33 of this embodiment is a stainless disk having a diameter of 600 mm and a thickness of 10 mm, and has a through-hole having a diameter of 31 mm at the center. The support bar 12 connected to the drive mechanism 20 penetrates this through-hole, and the work table 2 in the processing space 146
1 (a disc-shaped stainless steel plate having a diameter of 400 mm and a thickness of 10 mm). A plurality of contacts 61 having the same shape and material as the contact 31a are fixed to the edge of the through hole.
That is, the lower part 200b of the front surface of each contact 61 is not spaced from the outer edge of the upper surface of the disk partition wall 33 (that is, the adjacent contacts are in contact with each other).
The upper side 200a of each front (front) surface is pressed against the side surface of the support rod 12 by elastic force. Therefore, even if the work table 21 moves vertically or pivots horizontally, the contact 61
By sliding the upper surface 200a on the side of the support rod 12, conduction between them is maintained.

A plurality of contacts 62 having the same shape and material as the contact 31a are fixed to the lower end of the inner side surface of the cylindrical partition wall 32. That is, the upper surface 200a of each of the contacts 62 is fixed side by side without spacing at the lower end of the inner side surface of the cylindrical partition wall 32 (that is, so that adjacent contacts are in contact with each other). Each lower surface 200b of the front surface is pressed against the upper surface of the disk partition 33 by elastic force. Therefore, even if the disk partition wall 33 moves horizontally, the lower part 200b of the surface of the contact 62 slides on the upper surface of the disk partition wall 33, so that conduction between them is maintained.

The drive mechanism 20 provided in the drive space 147 includes an x stage 20x and a y stage 20
The y stage 20y and the rotation motor 20r are stacked in this order, and the y stage 20y has four support rods 12b.
(A stainless steel rod member having a length of 500 mm and a diameter of 30 mm) is provided on the rotating motor 20r with one support rod 12c (a stainless steel rod member having a length of 300 mm and a diameter of 30 mm).
Are connected respectively.

Therefore, the x stage 20x is connected to the disk partition wall 33 and the work table 21 via the y stage 20y and the support rod 12b mounted thereon, and the z stage 20z, the rotation motor 20r and the support rod 12c. Can be moved in the x direction. Also, y stage 20y
Are the support rod 12b, the z stage 20z, and the rotating motor 2
The disc partition wall 33 and the work table 21 can be moved in the y direction via the support rod 12c and the support bar 12c.
Further, the z stage 20z can be moved in the z direction via the rotation motor 20r and the support rod 12c,
The rotation motor 20r can rotate the work table 21 through 360 ° via the support rod 12c.

Thus, as in the first embodiment, the workpiece 24 is arbitrarily rotated and / or moved so that the plasma generating surface of the electrode 130 faces the processing target portion of the workpiece 24 at a desired distance. Can be held. Also in this embodiment, the working space 1 is formed by the contacts 31a and 61.
46 (that is, the airtight container upper plate 47a,
The cylindrical partition wall 32 and the disk partition wall 33) and the work table 21 are connected to each other in a conductive manner.
3 is not damaged by any of the horizontal movement, the vertical movement of the work table 21 and the horizontal rotation. Therefore, in the present embodiment, since high-frequency power is not transmitted to the whole area in the chamber, high-precision processing can be easily performed on a large-diameter lens without malfunction of the driving mechanism due to noise.

<Embodiment 4> In Embodiment 1, the cylindrical partition wall 32 is used.
The partitioning mechanism is constituted by the disk partition 33 and the partitioning mechanism. In this embodiment, as shown in FIG. 7, a container (hereinafter, referred to as an internal container) 11 having a structure in which the cylindrical partition 32 and the disk partition 33 are integrated with each other. Partition mechanism. By doing so, the structure of the partition can be simplified.

The inner container 11 (outer diameter (diameter), height 1
000 mm, thickness 10 mm, made of stainless steel) comprises a disk-shaped bottom surface 11a and a cylindrical side wall 11b. In addition,
A door (not shown) is provided on the side wall 11b, and the workpiece 24 can be taken in and out of the side wall 11b. The upper part of the side wall 11b of the inner container 11 is in contact with the inner wall of the upper plate 47a of the airtight container via the contact 31a, similarly to the cylindrical member 32 of the first embodiment. Thereby, even if the inner container 11 moves in the horizontal direction, the upper surface 200 of the contact 31a
As a slides on the inner wall of the airtight container upper plate 47a, conduction between them is maintained.

A through-hole having a diameter of 31 mm is formed at the center of the bottom surface 11a, and the support bar 12 connected to the drive mechanism 20 passes through the through-hole and passes through the work table 21 (diameter) in the inner container 11. 400 mm, 10 mm thick disk-shaped stainless steel plate). Similarly to the edge of the through hole of the disk partition wall 33 of the third embodiment, the contact 6
1 are fixed, and even when the work table 21 moves in the vertical direction or rotates in the horizontal direction, the upper surface 200a of the contact 61 slides on the side surface of the support rod 12 so that Is maintained.

The drive mechanism 20 provided in the drive space 147 includes an x stage 20x and a y stage 20
The support rod 12 is one of support rods 12c (a stainless steel rod member having a length of 300 mm and a diameter of 30 mm) connected to the rotation motor 20r. Only.

Therefore, the x stage 20x can move the work table 21 in the x direction via the y stage 20y, the z stage 20z, the rotation motor 20r, and the support rod 12c mounted thereon. Further, the y stage 20y has a z stage 20 mounted thereon.
The work table 21 can be moved in the y direction via z, the rotation motor 20r, and the support rod 12c.
When the support bar 12c moves in the horizontal direction, the inner container 11 is also moved horizontally by pressing the side surface of the through-hole. As a result, the work table 21 and the inner container 11 move horizontally evenly. Become. Also, z stage 2
0z can be moved in the z-direction via a rotation motor 20r and a support rod 12c mounted thereon,
The rotation motor 20r can rotate the work table 21 through 360 ° via the support rod 12c.

Thus, similarly to the first embodiment, the workpiece 24 is arbitrarily rotated and / or moved so that the plasma generating surface of the electrode 130 faces the processing target portion of the workpiece 24 at a desired distance. Can be held. Also in the present embodiment, the wall surfaces (that is, the airtight container upper plate 47a) forming the processing space 146 are formed by the contacts 31a and 61.
And the inner container 11) and the work table 21 are connected in a conductive manner, and this conduction is impaired by any of the horizontal movement of the inner container 11, the vertical movement of the work table 21, and the horizontal rotation. Not. Therefore, in the present embodiment, since high-frequency power is not transmitted to the whole area in the chamber, high-precision processing can be easily performed on a large-diameter lens without malfunction of the driving mechanism due to noise.

<Fifth Embodiment> In the fourth embodiment, the inner container 11 is moved horizontally. In this embodiment, as in the second embodiment, the inner container 11 is fixed to the airtight container upper plate 47a.
In this case, since the distance between the electrode 130 and the inner container side surface 11b does not change, the device is more electrically stable than the device of the fourth embodiment, which is preferable.

As shown in FIG. 8, the lens processing plasma CVM apparatus of this embodiment has a point that the upper surface of the side wall 11b of the inner container 11 is fixed to the inner wall of the airtight container upper plate 47a, Example 4 was the same as in Example 4 except that the diameter of the through hole provided in the center was large and the disk partition wall 33 was provided.
It is almost the same as the device of the above. Therefore, only the differences from the fourth embodiment will be described here.

The diameter of the through hole 71 provided at the center of the inner container bottom surface 11a is 300 mm.
Are covered by the disk partition wall 33 (except for the through hole 72 at the center of the disk partition wall 33). The disk partition wall 33 of the present embodiment is a disk-shaped stainless steel plate having a diameter of 600 mm and a thickness of 10 mm, and a through hole 7 having a diameter of 31 mm is provided at the center.
2

A contact 73 similar to the contact 51 used in the second embodiment is fixed to the outer edge of the disk partition wall 33.
Even if the disk partition wall 33 moves or rotates horizontally, the contact 73
Of the lower surface of the inner container 11b slides on the inner container bottom surface 11a, thereby maintaining conduction between them.

Support bar 12 for supporting work table 12
c is a through hole 71 in the inner container bottom surface 11a and the disk partition wall 33
The through hole 72 in the center is connected to the drive mechanism 20, and the edge of the through hole 72 of the disk partition wall 33 is provided with the fourth embodiment.
A plurality of contacts 61 are fixed similarly to the inner container bottom surface 11a in FIG. Therefore, even if the work table 21 moves in the vertical direction or turns in the horizontal direction, the upper surface 200a of the contact 61 slides on the side surface of the support rod 12, thereby causing the disk partition wall 33 and the work table 21 to slide. Is maintained via the contact 61 and the support rod 12.

The structure of the drive mechanism 20 according to the present embodiment is the same as that of the fourth embodiment. When the support bar 12c moves in the horizontal direction, the disc partition wall 33 is also moved horizontally by pressing the side surface of the through hole 72, and as a result, the work table 21 is moved horizontally.

Thus, similarly to the fourth embodiment, high-precision machining can be easily performed on a large-aperture lens without malfunction of the drive mechanism due to noise.

<Embodiment 6> In the fifth embodiment, the interior of the airtight container 47 is divided into two parts by providing the inner container 11, but in the present embodiment, a partition is provided in the airtight container 47 itself as a partition mechanism, and thereby the internal space is reduced. Bisect. In this manner, the distance between the electrode 130 and the inner container side surface 11b does not change, as in the fifth embodiment, so that the device is more electrically stable and preferable than the device of the third embodiment, and furthermore, the configuration is simplified. be able to.

The lens processing plasma CVM apparatus of the present embodiment is the same as that of the fifth embodiment except that the airtight container 47 is provided with a partition wall 33a and the internal container 11 is not provided as shown in FIG. It is almost the same as Therefore, only the differences from the fifth embodiment will be described here.

In this embodiment, the partition wall 33a (having a thickness of 1 mm) is placed horizontally in the airtight container 47 at a height of 1000 mm from the bottom surface.
0 mm). The partition wall 33a is fixed to the side surface of the airtight container 47, and has a through hole 81 having a diameter of 300 mm at the center. This partition wall 33a functions similarly to the inner container bottom surface 11a in the fifth embodiment. That is,
The through hole 81 of the horizontal partition wall 33a is covered with the disk partition wall 33. When the disk partition wall 33 moves or rotates horizontally, the lower end 210b of the contact 73 slides on the upper surface of the partition wall 33a, so that conduction is achieved. Will be maintained.

In the apparatus according to the present embodiment, similarly to the fifth embodiment, high-precision machining can be easily performed on a large-diameter lens without malfunction of the drive mechanism due to noise.

<Embodiment 7> Plasma CV of Embodiments 1 to 8
In the M device, the workpiece 24 is moved in all directions of x, y and z.
Can be moved, but when a flat plane is formed, it is not necessary to move the workpiece 24 in the z direction. An embodiment of the plasma CVM device used in such a case will be described below.

The plasma CVM apparatus according to the present embodiment has substantially the same configuration as the apparatus according to the fourth embodiment. Therefore, here, only the differences from the apparatus of the fourth embodiment will be described.

The inner container 11 of this embodiment does not have a through hole in the bottom surface 11a, and the work table 21 has the bottom surface 11a.
Is fixed to the center of the upper surface of the The work table 21 of the present embodiment can hold the workpiece 24 at an arbitrary height.

The drive mechanism 13 includes an x stage 20x, a y stage 20y, and a rotation motor 20r. The support rod 12 connected to the rotation motor 20r is connected to the bottom of the inner container 11. By displacing (rotating or moving) the support rod 12, the workpiece fixed to the bottom surface 11a of the inner container 11 together with the inner container 11 within a range in which the electrode unit 28 inside the processing space 146 does not contact the side wall 11b of the inner container 11. The table 21 can be displaced (moved or rotated) in the horizontal direction. The support bar 12 of this embodiment is
It is a stainless steel bar member having a length of 500 mm and a diameter of 30 mm.
(Height of 5 mm). Thereby, regardless of the displacement by the drive mechanism 13, the airtight container upper plate 47 is always
Since the distance between the inner wall and the upper surface of the inner container side wall 11b is within a predetermined range, the upper edge of the contact 31a is
Will always be in contact with Therefore, in the apparatus according to the present embodiment, similarly to the fifth embodiment, high-precision processing can be easily performed on a large-diameter lens without malfunction of the driving mechanism due to noise.

[0093]

According to the present invention, it is possible to obtain a plasma CVM apparatus applicable to processing of a large-diameter lens.
In addition, since the length of the high-frequency transmission path can be made shorter than when the bellows is used, the resistance in the transmission path can be reduced. For this reason, power loss during transmission can be reduced,
Plasma can be efficiently generated.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a plasma CVM apparatus according to a first embodiment.

FIG. 2 is an external perspective view showing an example of a contact.

FIG. 3 is a flowchart illustrating processing of a positioning control unit according to the first embodiment.

FIG. 4 is a graph showing a processing result according to the first embodiment.

FIG. 5 is a configuration diagram of a plasma CVM apparatus according to a second embodiment.

FIG. 6 is a configuration diagram of a plasma CVM apparatus according to a third embodiment.

FIG. 7 is a configuration diagram of a plasma CVM apparatus according to a fourth embodiment.

FIG. 8 is a configuration diagram of a plasma CVM apparatus according to a fifth embodiment.

FIG. 9 is a configuration diagram of a plasma CVM apparatus according to a sixth embodiment.

FIG. 10 is a configuration diagram of a plasma CVM apparatus according to a seventh embodiment.

FIG. 11 is a configuration diagram of a conventional plasma CVM device.

[Explanation of symbols]

11: Internal container, 11a: Bottom of internal container, 11b: Side wall of internal container, 12: Support rod, 12a: Support rod for cylindrical partition, 12b: Support rod for disk partition, 12c: Support rod for work table, 13 ... Horizontal drive mechanism, 20: drive mechanism, 20r: rotary motor, 20x: x stage, 20y
... y stage, 20z ... z stage, 21 ... work table, 24 ... workpiece, 25 ... electrode fixing part, 26 ... insulating plate, 27 ... connecting rod, 28 ... electrode unit, 29 ... power supply system, 30 ... exhaust System, 31a: Contact for cylindrical partition, 31b: Contact for disk partition, 31c: Contact for work table, 32: Cylindrical partition, 33: Disk partition, 3
DESCRIPTION OF SYMBOLS 4 ... Exhaust processing apparatus, 47 ... Airtight container, 47 ... Airtight container upper plate, 51 ... Work table contact, 52 ... Disc partition wall through hole, 61 ... Support bar contact, 62 ... Disk partition contact, 71 ... Internal container through-hole, 72 ... Disk partition wall through-hole, 7
3: contact for disk partition, 81: through hole in partition of airtight container, 1
30: Electrode, 145: Valve for processing space, 146: Space for processing, 147: Space for driving, 149: Valve for driving space, 154: High frequency power supply, 155: Matching device, 161
... Positioning control unit (NC controller), 162 ... Central processing unit (CPU), 163 ... Main storage device, 164
... external storage device, 165 ... input / output device (I / O), 20
0a: upper end of contact rear surface, 200b: lower end of contact rear surface, 200c: upper end of contact surface, 210a, 210b
... Contact lower end, 400a ... Contact inner back end, 4
00b: Outer back end of contact.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiroaki Tanaka 3-2-2-3 Marunouchi, Chiyoda-ku, Tokyo Nikon Corporation (72) Inventor Akihiro Koike 3-2-2-3 Marunouchi, Chiyoda-ku, Tokyo Stock Company (72) Inventor Katsuhiko Nakano 3-2-2, Marunouchi, Chiyoda-ku, Tokyo Nikon Corporation (72) Inventor Norio Shibata 3-2-2, Marunouchi, Chiyoda-ku, Tokyo Nikon Corporation

Claims (6)

[Claims] 1. An airtight container comprising a conductor, a reaction gas supply mechanism for supplying a reaction gas into the airtight container, and an exhaust mechanism for discharging gas from the airtight container, wherein the airtight container has An electrode for generating plasma, a support for supporting the workpiece, and a driving mechanism for supporting the support with a support member and displacing the support via the support member. In a shape creating apparatus for changing a shape of a workpiece by a reaction between a substance constituting the workpiece and a radical of a reaction gas generated by plasma, the inside of the hermetic container is formed by a space for processing and a space for driving. A contact mechanism configured to partition at least two of the airtight container, the support portion, the support member, and the partition mechanism and the partition mechanism, the partition member including a conductor; A contact that is connected to the object to be contacted so as to be relatively displaceable with respect to the object to be contacted, and the electrode and the support portion are disposed in the processing space; Is arranged in the driving space, wherein the airtight container and the partitioning mechanism constituting the processing space and the support portion are connected to each other in a conductive manner. 2. The shape creating apparatus according to claim 1, wherein the contact is slidably in contact with the surface of the contacted object. 3. The shape creating apparatus according to claim 1, wherein at least a part of said partition mechanism is connected to said drive mechanism and is displaced by said drive mechanism. 4. The shape generating device according to claim 3, wherein the drive mechanism includes a rotation drive mechanism and a straight drive mechanism, and the partition mechanism is connected to the rotation drive mechanism, and the rotation mechanism is connected to the rotation drive mechanism. A shape creating device, comprising: a partition wall that is rotated by a mechanism; and a partition wall connected to the linear drive mechanism and moved by the linear drive mechanism. 5. The shape generating apparatus according to claim 1, wherein the partitioning mechanism has a movable member which forms a bottom surface of the processing space, and is movable in a direction perpendicular to the bottom surface by the driving mechanism. The support portion is connected to the movable member by a contact, and the drive mechanism moves the movable member and the support portion uniformly in a direction perpendicular to the bottom surface of the processing space. Shape creation device. 6. The shape generating apparatus according to claim 5, wherein the partitioning mechanism further includes a cylindrical partition wall fixed to an upper surface of an inner wall of the airtight container and forming a side surface of the processing space. The member has a through hole in the center, is a disk-shaped partition wall that is arranged in the cylindrical partition wall, and constitutes a bottom surface of the processing space, and the support member penetrates the through hole, Supporting the support portion connected to the upper surface of the disk-shaped partition via the contactor, the drive mechanism has a mechanism to move the disk-shaped partition in the axial direction of the cylindrical partition, Between the disk-shaped partition and the cylindrical partition, the contact fixed to the disk-shaped partition is connected to be conductive by contacting the cylindrical partition, and the support portion and the disk-shaped partition are connected to each other. During the contact, the contact fixed to the support A shape creating device, wherein a child is connected to be conductive by contacting the disk-shaped partition wall.