JPH10270774A - Bridge type magnetic field sensor and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a bridge type magnetic field sensor on which excitation adjustment can be performed easily and which has a high quality characteristic, high magnetic field detecting sensitivity, and a simple structure, and can stably operate regardless of the external environment. SOLUTION: A bridge type magnetic field sensor 11 is constituted by forming a magnetic detecting element having four magnetic detecting sections respectively formed by providing four soft magnetic thin films 4a, 4b, 4c, and 4d on four sides of one main surface of a dielectric plate 2 so as to form a bridge circuit and, at the same time, providing input terminals and output terminals for making electric currents to flow to the thin films 4a, 4b, 4c, and 4d at the positions of the joints of the bridge circuit at the four corners of the main surface of the dielectric plate 2. The other main surface of the dielectric plate 2 is coated with a grounding conductor layer so as to avoid the influence of disturbance. The thin films 41, 4b, 4c, and 4d detect the impedance fluctuation which occurs when the sensor 11 receives an external magnetic field from a direction across a preset direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bridge type magnetic field sensor using a magnetic detecting element which exhibits an impedance change mainly in response to an external magnetic field, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, the miniaturization and high performance of electronic equipment have been rapidly progressing. In particular, in computer-related equipment, a head using the change of magnetic flux density in the past with the miniaturization and large capacity of a hard disk has been used. Instead, MR (magnetoresistive) heads and MR sensors utilizing the magnetoresistance effect are being used for reading. However, when using such magnetoresistive, change in electrical characteristics with respect to change in the external magnetic field (expressed as [Delta] R / R _s) is desired to be a head element greater as basic characteristics .

On the other hand, the above-described MR sensor or the recently developed G sensor which has been attracting attention is also used for measuring and detecting a minute magnetic field such as a measurement of a geomagnetic field or a magnetic field in the brain.
An MR (giant magnetoresistive) sensor is used. However, in the case of such an MR sensor or GMR sensor, there is a problem that various characteristics such as detection magnetic field sensitivity, temperature stability, and hysteresis characteristics are not practically sufficient.

Therefore, in order to solve such a problem,
For example, JP-A-6-176930 and JP-A-7-24
No. 8365, IEICE Transactions No. E116, No. 1, p7
As disclosed in (1996) and the like, use of a newly developed magnetic detecting element (also called a magnetic impedance element) has been proposed. This magnetic sensing element has the property of exhibiting changes in the resistance and inductance of the soft magnetic wire according to the change in the external magnetic field by passing a high-frequency current through the soft magnetic wire, that is, the property of capturing the change in the external magnetic field as an impedance change. Have.

In this magnetic sensing element, the impedance Z (the change) with respect to the change in the magnetic field is represented by R, the ohmic resistance of the element, L, the proportionality constant of the inductance, and ω, the angular frequency of the alternating current flowing through the soft magnetic wire. Then,
It is expressed by the relationship Z = R + jωL, and the change in impedance Z is detected according to this relationship.

However, such a magnetic detecting element has a large change in impedance due to a change in an external magnetic field, and has excellent characteristics as a magnetic field sensor and a magnetic head. (That is, the detection magnetic field sensitivity) is only about 10% / Oe, and there is a problem that the mass production for performing fine processing is also lacking in the manufacturing process.

In order to solve such a problem, an oscillation circuit is constructed by combining a soft magnetic wire with a transistor in Japanese Journal of Applied Magnetics, Vol. 19, 469 (1995).
There has been proposed a magnetic detection element which can improve the detection magnetic field sensitivity by utilizing C resonance.

On the other hand, U.S.A., et al.
5-A, 949 (1995) discusses the use of an amorphous metal magnetic single-layer film as a magnetic detection element. In such a magnetic detection element, a high-frequency current is directly applied to the metal magnetic single-layer film. Thereby, a small-sized magnetic field sensor whose impedance changes according to an external magnetic field can be realized. Incidentally, as a small magnetic field sensor, a sensor using a Colpitts oscillation circuit has been proposed.

[0009]

In the case of the above-described magnetic sensing element utilizing LC resonance, some passive components such as resistors, capacitors, and diodes are required in addition to the active components. In addition to the problem that the cost of the magnetic sensing element itself is unavoidably increased,
There is a disadvantage that various stray capacitances are generated between other circuit elements, circuit wirings, and the like existing around the magnetic sensing element, and the operation tends to be unstable.

In the case of a magnetic sensing element using an amorphous metal magnetic single-layer film, the amorphous metal magnetic single-layer film itself has a higher electric resistance than a metal generally used as a conductor line such as Cu, Al, or Ag. In addition, since the excitation by the energizing current is not performed efficiently and the rate of change in impedance due to the change in the magnetic field is small, the detection magnetic field sensitivity is 8
% / Oe, and it is difficult to realize it for practical use. That is, in the case of a magnetic sensing element using such an amorphous metal magnetic single-layer film, the impedance Z in the equivalent circuit is represented by the following relationship: Z = R + jωL.
When the magnetic film used for the magnetic sensing element has a frequency of several MHz or more, the effect of the skin effect and the effect of the eddy current loss reduce the change in the inductance with respect to the change in the external magnetic field, and the electric resistance value is large. As a result, the excitation by the energizing current is not efficiently performed, and the detection magnetic field sensitivity is not improved.

Further, the small magnetic field sensor using the Colpitts type oscillation circuit has a disadvantage that the number of parts is increased and the cost is easily increased, and the detection magnetic field sensitivity in this case is about 24.8% / Oe. Therefore, there is a problem that expected characteristics cannot be obtained.

In addition, in any of the conventional magnetic sensing elements, it is difficult to obtain an excellent quality characteristic having uniform characteristics in the basic configuration and the manufacturing process, and an excitation circuit for determining an optimal excitation condition is required. Adjustment also requires time and effort.

The present invention has been made in order to solve such problems, and the technical problems thereof are that the excitation adjustment is easy, the quality characteristics and the detection magnetic field sensitivity are excellent, and the stability is improved without being affected by the external environment. It is an object of the present invention to provide a bridge-type magnetic field sensor having a simple configuration that operates in a simple manner and a method of manufacturing the same.

[0014]

According to the present invention, a soft magnetic thin film for detecting a change in impedance generated when an external magnetic field is applied from another direction intersecting a predetermined direction is formed by a dielectric material. A magnetic field sensor using a magnetic detecting element provided on one main surface of a plate, wherein a soft magnetic thin film is provided on a dielectric plate so as to form a bridge circuit, is a bridge type magnetic field sensor.

In this bridge type magnetic field sensor, the soft magnetic thin film is provided on each of the four sides as a bridge circuit, and two-to-two pairs of opposing sides are arranged in the X and Y directions orthogonal to each other. The soft magnetic thin film has a magnetic detection direction in which one-to-two opposing sides have directions different from each other by 180 degrees, and the soft magnetic thin film has a magnetic detection direction in the X direction. It is preferable that one to two of them have magnetic anisotropy. In these bridge type magnetic field sensors,
An electrode as an input terminal and an output terminal for flowing a current to the soft magnetic thin film is provided at connection points of four corners in a bridge circuit on a dielectric plate, and is laminated so as to cover the other main surface on the dielectric plate It is preferable that the grounded conductor layer is provided and that the soft magnetic thin film is formed in a meandering shape.

According to the present invention, on the other hand, a magnetic sensing element forming step of forming a soft magnetic thin film on the entire one main surface of the dielectric plate to form a magnetic sensing element, and heat-treating the magnetic sensing element in a magnetic field. And a patterning step of patterning the soft magnetic thin film by photolithography and ion milling with respect to the magnetic sensing element provided with the magnetic anisotropy. Of the bridge-type magnetic field sensor for patterning the sensor so as to form a bridge circuit.

In this method of manufacturing a bridge-type magnetic field sensor, in the patterning step, when patterning the soft magnetic thin film as a bridge circuit, two-to-two pairs of opposing sides of the four sides of the bridge circuit are each formed in a meander shape. Patterning is preferred.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The bridge type magnetic field sensor of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows an example of a local structure of a magnetic detecting element 1 used in a bridge type magnetic field sensor according to one embodiment of the present invention, and FIG. FIG. 2B is a side sectional view taken along the line AA of FIG. 1A.

The magnetic detecting element 1 detects a change in impedance caused when an external magnetic field is applied to a local portion of one main surface of the dielectric plate 2 from another direction intersecting with a predetermined direction in a predetermined direction. The soft magnetic thin film 4 is formed, and the ground conductor layer 3 is laminated so as to cover the other main surface of the dielectric plate 2.

That is, the magnetic detecting element 1 detects a change in an external magnetic field as a change in impedance using the soft magnetic thin film 4 provided linearly. More specifically, the soft magnetic thin film 4 is annealed in a magnetic field in the width direction (along the line AA in FIG. 1A) to impart magnetic anisotropy in a uniaxial direction. . As a result, when a high-frequency current is supplied to the soft magnetic thin film 4, an eddy current is generated in the soft magnetic thin film 4 due to a skin effect, and the impedance changes due to a change in a magnetic field applied from the outside. This phenomenon is called the MI (magnetic-impedance) effect,
The magnetic detecting element 1 detects a change in a magnetic field from the outside using the MI effect.

FIG. 2 shows another example of the local structure of the magnetic detecting element 5 used in the bridge type magnetic field sensor according to another embodiment of the present invention, and FIG. FIG. 1 (b) is a view related to FIG.
It relates to a side cross-sectional view in the direction of the arrow '.

The magnetic detecting element 5 is a soft element for detecting a change in impedance generated when an external magnetic field is applied to one main surface of the dielectric plate 6 from another direction intersecting a predetermined direction. A magnetic thin film 8 is formed in a Miranda shape (jagged shape), and a ground conductor layer 7 is laminated so as to cover the other main surface of the dielectric plate 6.

Since the soft magnetic thin film 8 is provided to be long in the form of a Miranda, the magnetic sensing element 5 in this case is provided.
Since the impedance increases, the detection magnetic field sensitivity is improved.

When a bridge type magnetic field sensor according to one embodiment or another embodiment of the present invention is constructed, four soft magnetic thin films 4 are arranged on a dielectric plate 2 so as to form a bridge circuit. A magnetic detection unit is provided, or four soft magnetic thin films 8 are provided on the dielectric plate 6 so as to form a bridge circuit, and four magnetic detection units are provided. When these bridge-type magnetic field sensors are configured, the soft magnetic thin films 4 and 8 are arranged as bridge circuits on four sides, respectively, and two-to-two pairs of opposing sides are respectively set in the X direction orthogonal to each other. It may be formed in two axial directions with respect to the Y direction, or one-to-two opposite sides of the soft magnetic thin films 4 and 8 may have magnetic detection directions different from each other by 180 degrees. Although the thin films 4 and 8 have a magnetic detection direction in the X direction,
What is necessary is just to make two pairs have magnetic anisotropy. In these bridge type magnetic field sensors, the dielectric plates 2, 6
It is sufficient to provide electrodes as input terminals and output terminals for flowing a current through the soft magnetic thin films 4 and 8 at the connection points at the four corners in the above bridge circuit. In such a bridge-type magnetic field sensor, the ground conductor layers 3 and 7 may be stacked and covered over the entire other main surfaces of the dielectric plates 2 and 6.

On the other hand, in order to manufacture such a bridge type magnetic field sensor, a magnetic sensing element in which a soft magnetic thin film is formed on one entire main surface of the dielectric plates 2 and 6 to form the magnetic sensing elements 1 and 5 is formed. A forming step, a magnetic treatment step of heat-treating the magnetic sensing elements 1 and 5 in a magnetic field to impart magnetic anisotropy, and photolithography and ion milling of the magnetic sensing elements 1 and 5 imparted with magnetic anisotropy. Performing a patterning step of patterning the soft magnetic thin films 4 and 8;
In the patterning step, the soft magnetic thin film 4 is patterned so as to form a bridge circuit, or when the soft magnetic thin film 8 is patterned, a two-to-two pair of opposing sides of the four sides of the bridge circuit is meandered. What is necessary is just to pattern in a shape.

FIG. 3 is a plan view showing an outline configuration of a bridge type magnetic field sensor 11 according to an embodiment to which the magnetic detection element 1 shown in FIG. 1 is applied.

The bridge type magnetic field sensor 11 is a magnetic detecting element which is formed on the dielectric plate 2 with four soft magnetic thin films 4a, 4b, 4c, 4d arranged on each side so as to form a bridge circuit with four sides. On the other hand, at the same time, the soft magnetic thin films 4a, 4b,
It is provided with four electrodes 9a, 9b, 9c, 9d as input terminals and output terminals for flowing current to 4c, 4d. Among them, the soft magnetic thin films 4a, 4b, 4c, 4d
One dimension of each is 100 μm in width, 5 mm in length,
The thickness is 3 μm. Also, the electrodes 9a, 9b, 9c,
One dimension of each of 9d is 1 mm in length, 1 mm in width, and 3 μm in film thickness.

When the bridge type magnetic field sensor 11 is manufactured, a soft magnetic thin film such as a CoZrNb film formed on a dielectric plate 2 such as a glass substrate by an rf sputtering method is initially used as a magnetic detection element forming step. Fine processing is performed using photolithography and ion milling to create a magnetic sensing element.

Next, as a magnetic processing step, a heat treatment temperature of 4
A heat treatment in a rotating magnetic field and a heat treatment in a static magnetic field are performed under the condition of 00 ° C., and an easy axis E _a (Easy axis orientatio) is formed as magnetic anisotropy in the direction shown in FIG.
n).

Further, as a patterning step, the soft magnetic thin films 4a, 4b, 4c, and 4c are formed by photolithography and ion milling on the magnetic sensing element provided with magnetic anisotropy.
4d is patterned. Finally, as an electrode formation process,
Four electrodes 9 at the four corner connection points in the bridge circuit
a, 9b, 9c and 9d are formed.

[0032] Thus, in a bridge type magnetic sensor 11, the soft magnetic thin film 4a and 4c the width direction is disposed in the easy axis direction E _a soft magnetic thin film 4b and 4d in the width direction of magnetization hard axis Be placed. Further, here, the soft magnetic thin films 4a and 4c have the same impedance change with respect to the change in the impedance and the external magnetic field, and the same relationship holds for the magnetic detection elements 4b and 4d. That is, the soft magnetic thin film 4a and 4c impedance change when an external magnetic field applying direction is the direction of application of the DC magnetic field H _dc 1, soft magnetic thin film 4b and 4d are applied external magnetic field application direction of the DC magnetic field H _dc 2 The impedance changes when in the direction.

FIG. 5 shows the soft magnetic thin films 4a, 4b, 4c, 4
When d is used, impedances Z ₁ , Z ₂ ,
₃ shows a bridge circuit of the bridge type magnetic field sensor 11 having Z ₃ and Z ₄ .

In this bridge circuit, the impedances Z ₁ and Z ₄ are equal, and the impedances Z ₂ and Z ₃ are also equal. The impedance of the soft magnetic thin films 4a and 4c is represented by Z _a =
R _a + jX _a, the impedance of the soft magnetic thin film 4b and 4d as _{Z b = R b + jX b} , equilibrium of the bridge circuit with _{Z 1 Z 4 = Z 2 Z} 3 relational expression [the first formula] When the conditions are obtained, R _a = R _b [the second equation], X
_a = X _b [the third formula] is obtained.

In the bridge circuit of the bridge type magnetic field sensor 11, when an external magnetic field is not applied, the effect of the skin effect is not remarkable in a frequency range of several tens of MHz or less, so that the resistances _Ra and _Rb are substantially equal. Equation 2

On the other hand, the soft magnetic thin films 4a and 4c excite the easy axis direction Ea at _a high frequency, and the soft magnetic thin films 4b and 4d
Because it has excited the hard magnetization axis direction at a high frequency, the value X _a reactance, a difference between X _b occurs. Therefore, the relationship of the third equation described above is not satisfied, and an output voltage V ₀ is generated from the bridge circuit. However, the frequency is several tens M
Size of the reactance in Hz or less, since small compared to the resistance, the potential difference V ₀ generated between connecting points b-d is small.

When an external magnetic field is applied to the bridge type magnetic field sensor 11 in the direction of the DC magnetic field H _dc1 shown in FIG. 4, the impedance of the soft magnetic thin film 4a changes greatly near the anisotropic magnetic field, but the soft magnetic thin film 4b No influence of the demagnetizing field increases and no change in impedance is observed. For this reason, when the magnetic field applied from the outside is largely changed, the degree of impedance imbalance is increased and the output voltage V ₀ is greatly changed.

On the other hand, when an external magnetic field is applied to the bridge type magnetic field sensor 11 in the direction of the DC magnetic field H _dc2 shown in FIG. 4, the impedance of the soft magnetic thin film 4a hardly changes, but the impedance of the soft magnetic thin film 4b changes. Decreases monotonically with the magnetic field. However, the frequency is several MHz to several tens.
At MHz, the change is small and the output voltage V ₀ does not change much.

FIG. 6 shows an input voltage applied to the bridge type magnetic field sensor 11 (voltage value V _i = 3 V, frequency f = 5M).
Hz) in one direction (DC magnetic field H _dc 1 shown in FIG. 4).
When the external magnetic field is applied in the direction of [the generated magnetic field H _dc (k
Shows the change in A / m) to the magnetic field H _dc (Oe) output voltage V ₀ which] are assumed to be applied (mV) (external magnetic field dependence of the output voltage). From FIG. 6, when the frequency is 5 MHz, when an external magnetic field is applied in the direction of the DC magnetic field H _dc1 , the output voltage V ₀ has a maximum value near 5 (Oe), but the external magnetic field is applied in the direction of the DC magnetic field H _dc 2. It can be seen that the output voltage V ₀ does not change when applied.

FIG. 7 shows another example (voltage value V _i = 3 V, frequency f = 20) of the input voltage to the bridge type magnetic field sensor 11.
MHz) in the other direction (the DC magnetic field H _dc shown in FIG. 4).
Change in output voltage V ₀ (mV) when an external magnetic field is applied (in the direction of 2) (the magnetic field H _dc (Oe) is also applied to the generated magnetic field H _dc (kA / m)). (External magnetic field dependence of output voltage). From FIG. 7, when the frequency is 20 MHz, when an external magnetic field is applied in the direction of the DC magnetic field H _dc1 , the output voltage V ₀ reaches a maximum value near 5 (Oe), but the external magnetic field is applied in the direction of the DC magnetic field H _dc 2. It can be seen that the output voltage V ₀ slightly changes when applied, but is much smaller than when applied in the direction of the DC magnetic field H _dc1 .

FIG. 8 shows that an external DC magnetic field is applied to the bridge-type magnetic field sensor 11 in one direction (direction of the DC magnetic field H _dc1 shown in FIG. 4) under specific (voltage value V _i = 3 V) conditions. The change rate ΔV ₀ / V ₀ (%) related to the output voltage V _{0 in the} case is shown as a characteristic with respect to the frequency (MHz). From FIG. 8, it can be seen that the maximum change rate of 270% is shown around the frequency of 15 MHz.

By the way, with reference to FIGS. 3 to 8, the bridge type magnetic field sensor 11 in which the magnetic detecting element 1 shown in FIG. 1 is applied has been described. Similarly, the magnetic detecting element 5 shown in FIG. 2 is applied. A similar effect can be obtained with a bridge-type magnetic field sensor according to another embodiment of the present invention, that is, a bridge-type magnetic field sensor having a miranda-shaped soft magnetic thin film 8 on each of four sides of a bridge circuit on a dielectric plate 6. Can be However, in this case, since the impedance is further increased by the Miranda-shaped soft magnetic thin film, the detection magnetic field sensitivity is further improved and higher performance is obtained as compared with the bridge type magnetic field sensor 11 of the embodiment.

Also, as for the bridge magnetic field sensor to which any one of the magnetic detecting element 1 shown in FIG. 1 and the magnetic detecting element 5 shown in FIG. 2 is applied, as described above, the dielectric plate on the opposite side of the soft magnetic thin film is used. As shown in FIG. 8, ground conductor layers 3 and 7 are laminated on the entire main surface (lower surface) of each of the magnetic conductors 2 and 6. , Each bridge circuit is less likely to be affected by disturbance, which is effective as a characteristic maintenance measure in use.

[0044]

As described above, according to the present invention, a soft magnetic thin film is provided as a bridge circuit on one main surface of a single dielectric plate to provide four magnetic detecting portions. In addition, in order to avoid the influence of disturbance of the bridge circuit, the magnetic sensing element with the other main surface on the dielectric plate covered with a ground conductor layer is used, so that excitation adjustment is easy and quality characteristics Thus, a bridge-type magnetic field sensor having a simple configuration that is excellent in sensitivity to detected magnetic fields and operates stably without being affected by the external environment is realized.

[Brief description of the drawings]

FIG. 1 shows an example of a local structure of a magnetic detecting element used in a bridge type magnetic field sensor according to an embodiment of the present invention, wherein FIG.
(B) relates to a side cross-sectional view in the AA direction of (a).

FIG. 2 shows another example of a local structure of a magnetic detection element used in a bridge type magnetic field sensor according to another embodiment of the present invention.
(B) relates to a side cross-sectional view along the line A'-A 'of (a).

FIG. 3 is a plan view showing an outline configuration of a bridge-type magnetic field sensor according to an embodiment to which the magnetic detection element shown in FIG. 1 is applied.

FIG. 4 is a plan view for explaining the provision of an easy axis direction and the direction of application of an external magnetic field when the bridge type magnetic field sensor shown in FIG. 3 is manufactured.

5 shows a bridge circuit of the bridge type magnetic field sensor shown in FIG.

FIG. 6 shows a change in output voltage when the external magnetic field is applied in one direction to the bridge type magnetic field sensor shown in FIG. 3 under specific conditions with respect to the input voltage (external magnetic field dependence of the output voltage). .

7 shows a change in output voltage (external magnetic field dependence of output voltage) when an external magnetic field is applied to the bridge type magnetic field sensor shown in FIG. 3 in another direction under another condition with respect to the input voltage. .

8 is a graph showing, as a characteristic with respect to frequency, a rate of change with respect to an output voltage when an external DC magnetic field is applied in one direction to the bridge magnetic field sensor shown in FIG. 3 under a specific voltage condition.

9 is a plan view showing a ground conductor layer in a bridge magnetic field sensor to which the magnetic detection element shown in FIG. 1 or the magnetic detection element shown in FIG. 2 is applied.

[Explanation of symbols]

 1,5 Magnetic detecting element 2,6 Dielectric plate 3,7 Ground conductor layer 4,4a, 4b, 4c, 4d, 8 Soft magnetic thin film 9a, 9b, 9c, 9d Electrode 11 Bridge type magnetic field sensor

Claims (9)

[Claims] 1. A soft magnetic thin film provided on one main surface of a dielectric plate for detecting a change in impedance generated when an external magnetic field is applied from another direction intersecting a predetermined direction. A magnetic field sensor using a magnetic detection element, wherein the soft magnetic thin film is disposed on the dielectric plate so as to form a bridge circuit. 2. The bridge-type magnetic field sensor according to claim 1, wherein the soft magnetic thin film includes a bridge circuit as the bridge circuit.
Of the ones arranged on each side, two of the opposite sides
A bridge-type magnetic field sensor, wherein two pairs are formed in two axial directions of an X direction and a Y direction orthogonal to each other. 3. The bridge-type magnetic field sensor according to claim 2, wherein the soft magnetic thin film has magnetic detection directions in which one-to-two opposing sides have directions different from each other by 180 degrees. Bridge type magnetic field sensor. 4. A bridge type magnetic field sensor according to claim 3, wherein one of said soft magnetic thin films having said magnetic detection direction in said X direction has magnetic anisotropy. Magnetic field sensor. 5. The bridge-type magnetic field sensor according to claim 1, wherein a current flows through the soft magnetic thin film at connection points of four corners in the bridge circuit on the dielectric plate. A bridge-type magnetic field sensor provided with electrodes as input terminals and output terminals. 6. The bridge-type magnetic field sensor according to claim 1, further comprising a ground conductor layer laminated so as to cover the other main surface of said dielectric plate. Bridge type magnetic field sensor. 7. The bridge-type magnetic field sensor according to claim 1, wherein the soft magnetic thin film is formed in a meandering shape. 8. A magnetic sensing element forming step of forming a soft magnetic thin film on one entire main surface of a dielectric plate to form a magnetic sensing element, and heat-treating the magnetic sensing element in a magnetic field to provide magnetic anisotropy. And a patterning step of patterning the soft magnetic thin film by photolithography and ion milling on the magnetic sensing element provided with the magnetic anisotropy. A method for manufacturing a bridge-type magnetic field sensor, wherein patterning is performed to form a bridge circuit. 9. The method for manufacturing a bridge-type magnetic field sensor according to claim 8, wherein in the patterning step, when patterning the soft magnetic thin film as the bridge circuit,
A method of manufacturing a bridge-type magnetic field sensor, comprising: patterning two to two pairs of opposing sides of the four sides of the bridge circuit in a meander shape.