JPH10270675A - Compression bonded semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a GCT(a gate communication type turn-off) thyristor capable of being surely turned off, by reducing total inductance between a gate driver and the GCT thyristor and ensuring the sufficient rate of increase of a gate reverse current. SOLUTION: An auxiliary cathode terminal board 61 is disposed so as to be fast stuck onto the external surface (a surface on the reverse side to a surface brought into contact with a gate terminal board 63) of an insulator 62, and the insulator 62 is held by the auxiliary cathode terminal board 61 and the gate terminal board 63. The auxiliary cathode terminal board 61 is fixed at the edge section of a cathode post electrode 31, and the auxiliary cathode terminal board 61, the insulator 62 and the gate terminal board 63 are fastened so as to maintain electrical insulation between the auxiliary cathode terminal board 61 and the gate terminal board 63. An electrode body 60, in which three of the auxiliary cathode terminal board 61, the insulator 62 and the gate terminal board 63 are integrated, is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure contact type semiconductor device, and more particularly to a gate commutation type turn-off thyristor (GC).
T).

[0002]

2. Description of the Related Art A gate commutation type turn-off thyristor (hereinafter referred to as a GCT thyristor) is different from a gate turn-off thyristor (hereinafter referred to as a GTO thyristor).
The rate of increase of the gate reverse current is increased to about 100 times that of the GTO thyristor, and all the main current flows (commutates) to the gate circuit to perform the turn-off operation.

FIGS. 13 and 14 show a sectional configuration and a planar configuration of a GCT thyristor 90. FIG. FIG.
FIG. 14 is a plan view of the GCT thyristor 90 viewed from the arrow direction shown in FIG. Accordingly, FIG. 13 is a longitudinal sectional view taken along line SA-SB in FIG.

In FIG. 13, a gate electrode 29a is formed on a surface located on the outer peripheral side of the lower surface of the semiconductor substrate 28 on which each segment of the GCT thyristor 90 is formed. On the lower surface of the inner semiconductor substrate 28, each cathode electrode 29b is formed corresponding to the position of each segment.

Under the cathode electrode 29b on the lower surface of the semiconductor substrate 28, a cathode strain buffer plate 30 and a cathode post electrode 31 are sequentially arranged. On the other hand, an anode distortion buffer plate 32 is provided on the surface of the anode electrode (not shown) of the semiconductor substrate 28 (the surface opposite to the cathode electrode 29b).
And an anode post electrode 33 are sequentially arranged.

The gate electrode 29a of the semiconductor substrate 28
A ring-shaped gate electrode 34 is disposed so as to be in contact with the surface of the gate terminal plate 38 made of a ring-shaped metal plate.
However, it is arranged in contact with the inner peripheral edge surface of the ring gate electrode 34 so that the inner peripheral edge surface can slide with the electrode 34.

Along with the gate terminal plate 38, a ring-shaped elastic body 35 such as a disc spring or a wave spring for pressing the ring-shaped gate electrode 34 against the gate electrode 29a is provided. The elastic body 35 presses the gate terminal plate 38 via the ring-shaped insulator 36.

An insulator 37 made of an insulating sheet or the like for insulating the ring-shaped gate electrode 34 from the cathode strain buffer plate 30 and the cathode post electrode 31 extends along the wall surfaces of the cathode strain buffer plate 30 and the cathode post electrode 31. It is arranged.

A cathode flange 26 is fixed to the edge of the cathode post electrode 31, and an anode post electrode 33
Has an anode flange 40 fixed thereto. And
Between the cathode flange 26 and the anode flange 40, so as to surround the main part of the GCT thyristor 90,
An insulating cylinder 41 made of an insulating material such as ceramic is provided. The insulating cylinder 41 has a configuration in which the insulating cylinder 41 is divided vertically with the gate terminal plate 38 interposed therebetween, and has a protrusion 42 for increasing the creepage distance. Therefore, the outer peripheral side portion of the gate terminal plate 38 projects outside from the side surface of the insulating cylinder 41. The insulating cylinder 41 is provided on the gate terminal plate 38.
It is air-tightly fixed to the upper and lower surfaces.

A connecting plate 43a fixed to the lower end face of the insulating cylinder 41 is airtightly fixed to the cathode flange 26, and a connecting plate 43b fixed to the upper end face of the insulating cylinder 41 is airtightly fixed to the anode flange 40. As a result, the GCT thyristor 90 has a sealed package structure. The interior is replaced with an inert gas.

Further, a plurality of mounting holes 21 are provided at predetermined intervals in an edge portion of the gate terminal plate 38. As shown in FIG. 14, the appearance of the GCT thyristor 90 has a disk shape, and the cathode post electrode 31, the cathode flange 26, and the gate terminal plate 38 are arranged concentrically in this order. Here, the gate terminal plate 38 is connected to a gate driver (not shown) via the mounting hole 21 by screwing.

The operation of the GCT thyristor and the gate driver will now be described. FIG. 15 shows a GCT thyristor and a circuit configuration for operating the GCT thyristor. In FIG. 15, each reference numeral 3 denotes a GCT thyristor, and the gate electrode 3G and the cathode electrode 3 of the GCT thyristor 3 are shown.
The gate driver 4 (drive control means) is connected between the gate driver 4 and the K node 13.

The gate driver 4 has a driving power supply 4a
(Power supply voltage V _GD (for example, 20 V)), capacitor 4b,
It has an inductance 4C and a transistor 4d.

The gate driver 4 has a turn-on control current I _G for turning on the GCT thyristor 3.
The generated, the wiring path or via the line L1 is applied to the current I _G to the gate electrode 3G. In response, G
CT thyristor 3 is turned on. Reference numeral 11 denotes a node, 9 denotes a power supply for driving the device 10,
That is, it is a main circuit power supply (power supply voltage V _DD ).

[0015] On the other hand, reference numeral 1 is an inductance for suppressing the increase rate dI _A / dt of the primary current to the anode current I _A flows when the GCT thyristor 3 is turned on, 2, when the GCT thyristor 3 is turned off It is a free-wheeling diode for returning the energy generated in the inductance 1.

Reference numeral 5 denotes a node 11 of the anode electrode 3A.
And the node 12 of the cathode electrode 3K are connected in parallel to the GCT thyristor 3, and only the peak voltage generated as the anode-cathode electrode voltage V _AK rises when the GCT thyristor 3 is turned off. Is a peak voltage suppression circuit for suppressing the peak voltage. The circuit 5
When the voltage V _AK is turned off, the voltage V _AK has a function of holding or clamping the voltage V _AK for a predetermined time to a predetermined voltage value determined according to the voltage blocking ability of the GCT thyristor 3.

[0017] It should be noted that, in the conventional GTO thyristor, at the time of turn-off, gate driver 4 diverted from the main current I _A
It had flowed to the side, the at GCT thyristor by increasing as much as possible the absolute value of the rate of change or rate of rise of the gate reverse current I _GQ (gradient) dI _GQ / dt (ideally, | dI _GQ /
dt | is ∞), and to flow all of the main current I _A to the node 12 via the gate driver 4 as the gate reverse current I _GQ. That is, the main current I _A and the gate reverse current I _GQ and the ratio of the absolute value determined turn-off gain _{G (= | I A / I} GQ
|) Is set to 1 or less (G ≦ 1), so that the main current I _A
All, the turn-on control current I _G in the reverse direction, from the anode electrode 3A through the gate electrode 3G was commutated to the gate driver 4 and node 12 side, turning off the GCT thyristor 3 Te following. At this time, the anode electrode 3
The cathode current I _K flowing through the GCT thyristor 3 directly from A to the cathode electrode 3K immediately stops flowing at all. In that sense, this method, rather than the shunt of the main current I _A, with each other to achieve a "commutation of the main current I _A."

[0018] Here, the power supply voltage value V _GD of the driving power source (mains) 4a of the gate driver 4, depending on the relationship between the inductance value of the loop R1, is possible to change the value of the increase rate dI _GQ / dt It is possible to set the rise rate | dI _GQ / dt | to an extremely large value that is as close as possible to the ∞ value by appropriately setting the values of both 4 (4a) and R1.
Can be very short time it flows the main current I _A rolling a to all gate driver 4 side.

On the other hand, it is easy to realize such a commutation of the gate reverse current _IGQ by using only the gate driver 4 because the power supply voltage value V _GD that the driving power supply 4a of the driver 4 can take is limited. However, on the other hand, the driving power supply voltage V _GD of the gate driver 4 is set to a practical value that can be set, and the absolute value of the rate of rise dI _GQ / dt required to set the gate turn-off gain G to 1 or less is set. Realizable loop R
It is actually possible to set the value of the internal inductance of 1.

Therefore, a line L1 from the gate electrode 3G to the gate driver 4, a gate driver 4, a line L2 from the gate driver 4 to the cathode 3K via the node 13, and a GCT thyristor 3 between the gate and the cathode. Loop or route R1 consisting of internal route
(Floating) internal inductance is required to be reduced to a value required to make the turn-off gain G 1 or less.

[0021]

As described above,
In the conventional GCT thyristor, in order to increase the rate of rise (dI _GQ / dt) of the gate reverse current, the gate electrode is formed in a ring shape, and the contact area between the gate terminal plate of the GCT thyristor and the gate driver is reduced. Widen,
The configuration is such that the total inductance between the gate driver and the GCT thyristor is reduced.

Here, the connection between the gate driver and the gate driver will be described with reference to the configuration of the GCT thyristor 90 shown in FIG. 13. The gate terminal plate 38 is connected to the gate driver, and the cathode post electrode 31 and the gate driver are connected. Is connected via the cathode flange 26 or via an electrode plate (ring-shaped metal plate) inserted between the stack electrode disposed outside the cathode post electrode 31 and the cathode post electrode 31. Had been done.

For example, when the cathode flange 26 is used, as shown in FIG. 13, the gate terminal plate 38 and the cathode flange 26 are arranged so as to be spaced apart and parallel to each other. Accordingly, a current loop of the control system flowing to the cathode flange 26 via the ring-shaped gate electrode 34 and the cathode post electrode 31 is formed, and the current loop generates a non-negligible inductance.

If the total inductance cannot be reduced sufficiently, the rate of rise of the gate reverse current (dI _GQ / dt) cannot be sufficiently obtained, and it becomes difficult to transfer all of the main current to the gate circuit. Failure may lead to device destruction.

The present invention has been made in order to solve the above-mentioned problems, and has been made to reduce a total inductance between a gate driver and a GCT thyristor and to secure a sufficient gate reverse current increase rate. Provided is a GCT thyristor capable of reliably turning off.

[0026]

According to a first aspect of the present invention, there is provided a press-contact type semiconductor device, wherein a gate electrode is formed along an outer peripheral edge of one main surface, and a cathode electrode is formed inside the gate electrode. A semiconductor substrate having an anode electrode formed on the other main surface; a cathode post electrode electrically connected to the cathode electrode; a ring-shaped gate electrode having one end surface in contact with the gate electrode; An electrode body for electrically connecting the gate electrode and the cathode post electrode to the outside; wherein the electrode body is in contact with a gate terminal plate in contact with the other end surface of the ring-shaped gate electrode; An auxiliary cathode terminal plate connected to the first electrode and an insulator disposed at least between the gate terminal plate and the auxiliary cathode terminal plate and electrically insulating the two. Is composed of a laminate was.

According to a second aspect of the present invention, there is provided a press-contact type semiconductor device comprising an electrically insulating insulating cylinder enclosing at least the semiconductor substrate and the ring-shaped gate electrode, wherein the electrode body is connected to the cathode post electrode. The gate terminal plate is a ring-shaped metal plate having a U-shaped region formed by folding an inner peripheral edge portion, the ring-shaped metal plate being connected to the insulating tube so as to maintain airtightness. The outer surface of the folded portion that defines the region is disposed so as to contact the other end surface of the ring-shaped gate electrode, and the electrode body is disposed so as to protrude outward from the side surface of the insulating cylinder.

According to a third aspect of the present invention, in the press-contact type semiconductor device, an elastic body for urging the ring-shaped gate electrode in the direction of the gate electrode and pressing the ring-shaped gate electrode against the gate electrode is further provided. The elastic body is disposed in the U-shaped region, and urges the ring-shaped gate electrode in the direction of the gate electrode together with the folded portion.

A pressure-contact type semiconductor device according to a fourth aspect of the present invention includes an electrically insulating insulating cylinder including at least the semiconductor substrate and the ring-shaped gate electrode, and the auxiliary cathode terminal plate has an inner peripheral end. An edge is a ring-shaped metal plate electrically connected to a side surface of the cathode post electrode, and the gate terminal plate has an inner peripheral edge surface in contact with the other end surface of the ring-shaped gate electrode. A ring-shaped metal plate disposed, wherein the insulating cylinder has first and second insulating cylinders divided into two in a direction perpendicular to a cylindrical axis, and the electrode body includes first and second insulating cylinders. Sandwiched by a second insulating cylinder,
The insulating cylinder is provided so as to protrude outward from the side surface.

According to a fifth aspect of the present invention, in the pressure contact type semiconductor device, the elastic body which urges the ring-shaped gate electrode in the direction of the gate electrode and presses the ring-shaped gate electrode against the gate electrode is further provided. The elastic body is disposed at a position in contact with an inner peripheral edge of the auxiliary cathode terminal plate so as to urge the ring-shaped gate electrode together with the electrode body in the direction of the gate electrode. .

[0031]

First Embodiment <Device Configuration> FIG. 1 shows a gate commutation type turn-off thyristor (hereinafter, referred to as a GCT thyristor) 100 as a press-contact type semiconductor device according to a first embodiment of the present invention. 1 shows a cross-sectional configuration.

In FIG. 1, a gate electrode 29a is formed on a surface located on the outer peripheral side of the lower surface of the semiconductor substrate 28 on which each segment of the GCT thyristor 100 is formed. Each cathode electrode 29b is formed on the lower surface of the semiconductor substrate 28 corresponding to the position of each segment.

Below the cathode electrode 29b on the lower surface of the semiconductor substrate 28, a cathode strain buffer plate 30 and a cathode post electrode 31 are sequentially arranged. On the other hand, an anode distortion buffer plate 32 is provided on the surface of the anode electrode (not shown) of the semiconductor substrate 28 (the surface opposite to the cathode electrode 29b).
And an anode post electrode 33 are sequentially arranged.

The gate electrode 29a of the semiconductor substrate 28
A ring-shaped gate electrode 34 is provided so as to be in contact with the surface of the gate electrode 34. A gate terminal plate 63 is slidably contacted and arranged on the ring-shaped gate electrode 34.

The gate terminal plate 63 is formed by folding back the inner peripheral edge of a ring-shaped metal plate and has a U-shaped region 63a having a U-shaped cross section. The folded-back portion 63b defining the U-shaped region 63a is in contact with the rear surface of the ring-shaped gate electrode 34.

The insulator 62 is provided so as to be in close contact with the outer surface of the gate terminal plate 63 (the surface opposite to the side on which the elastic body 35 described later is provided). Insulator 6
Reference numeral 2 indicates that the inner peripheral edge of the ring-shaped insulating plate is bent once and extends along the wall surfaces of the anode strain buffer plate 32 and the anode post electrode 33, and the leading end thereof reaches near the main surface of the semiconductor substrate 28. .

An auxiliary cathode terminal plate 61 is provided so as to be in close contact with the outer surface of the insulator 62 (the surface opposite to the surface in contact with the gate terminal plate 63). A laminated body sandwiched between 61 and the gate terminal plate 63 is formed.

The auxiliary cathode terminal plate 61 is fixed to the edge of the cathode post electrode 31, and the auxiliary cathode terminal plate 61, the insulator 62, and the gate terminal plate 63 are composed of the auxiliary cathode terminal plate 61 and the gate terminal plate. 63 are fixed so as to maintain electrical insulation between them, and the three members form an integrated electrode body 60. The electrode body 60 is electrically connected to a gate driver (device for generating a gate turn-on control current between the gate and the cathode of the GCT thyristor) not shown.

In the U-shaped region 63a of the gate terminal plate 63, a ring-shaped gate electrode 3
A ring-shaped elastic body 35 such as a disc spring or a wave spring for pressing the electrode 4 against the gate electrode 29a is provided. The elastic body 35 presses the distal end portion 63a via the ring-shaped insulator 36 so as to securely contact the ring-shaped gate electrode 34 with the gate electrode 29a.

An anode flange 40 is fixed to the anode post electrode 33. Then, the electrode body 60
Between the anode flange 40 and the anode flange 40, an insulating cylinder 51 made of an insulator such as ceramic is disposed so as to surround a main part of the GCT thyristor 100. Insulation tube 5
Reference numeral 1 denotes a configuration having a projection 52 for increasing the creepage distance. The connection plate 4 is provided on the lower end surface of the insulating cylinder 51.
3c is fixed, and the connection plate 43c and the gate terminal plate 63 are fixed.
The connection plate 43b fixed to the upper end surface of the insulating cylinder 51 is fixed airtight to the anode flange 40, whereby the GCT thyristor 100 has a sealed package structure. The interior is replaced with an inert gas.

The outside of the cathode post electrode 31 and the anode post electrode 33 is urged in a direction facing each other to press the cathode strain buffer plate 30 and the anode strain buffer plate 32 against the semiconductor substrate 28. Although electrodes are arranged, illustration and description are omitted.

<Manufacturing Process> Next, referring to FIGS.
The manufacturing process of the CT thyristor 100 will be described.

First, in the step shown in FIG. 2, a cathode post electrode 31 having an auxiliary cathode terminal plate 61 fixed to the edge thereof is prepared, and an insulator 62 and a gate terminal plate 63 are provided on the auxiliary cathode terminal plate 61. Are placed in order. The auxiliary cathode terminal plate 61 and the insulator 62 have shapes to be rotated and are placed so as to be inserted into the cylindrical cathode post electrode 31. In addition, the cathode post electrode 3
A cathode strain buffer plate 30 is placed on 1.

Next, in the step shown in FIG. 3, the auxiliary cathode terminal plate 61, the insulator 62, and the gate terminal plate 63 are connected so that electrical insulation between the auxiliary cathode terminal plate 61 and the gate terminal plate 63 is maintained. An electrode body 60 in which the three members are integrated is formed by airtightly fixing, for example, by bonding with an adhesive or the like.

Next, in the step shown in FIG. 4, the elastic body 35 and the ring-shaped insulator 36 are placed in the U-shaped region 63a of the gate terminal plate 63. The U-shaped area 63
The elastic body 35 disposed in the upper portion (a) of the elastic body 35 moves the folded portion 63b upward (toward the semiconductor substrate 28) via the ring-shaped insulator 36.
In the direction in which is arranged).

Next, in the step shown in FIG. 5, an insulating tube 51 made of an insulating material such as ceramic is provided so as to surround the main part of the GCT thyristor 100. At this time, the connection plate 43c is fixed to the lower end surface of the insulating cylinder 51, and the connection plate 43b is fixed to the upper end surface, and the connection plate 43c is air-tightly fixed to the gate terminal plate 63.

Next, in the step shown in FIG. 6, the ring-shaped gate electrode 34 is mounted on the folded portion 63b of the gate terminal plate 63 so that the rear surface thereof is located, and the upper part of the cathode strain buffer plate 30 is formed. The semiconductor substrate 28 is placed so that the cathode electrode 29b is located at the bottom.

An anode strain buffer plate 32 is placed on the surface of the anode electrode (not shown) of the semiconductor substrate 28 (the surface opposite to the cathode electrode 29b), and the anode post electrode 33 is placed on the anode strain buffer plate 32. Is placed. In this case, an anode flange 40 is fixed to an edge portion of the anode post electrode 33, and the anode flange 40 and a connection plate 43 fixed to an upper end surface of the insulating cylinder 51.
b is hermetically fixed to each outer peripheral edge by a method such as brazing or the like, whereby the GCT thyristor 100 is completed.

<Characteristic Functions and Effects> As described above, the auxiliary cathode terminal plate 61 and the gate terminal plate 63 are arranged close to each other with the insulator 62 interposed therebetween. When connected to the driver, the inductance caused by the current loop flowing from the gate terminal plate 63 to the auxiliary cathode terminal plate 61 via the ring-shaped gate electrode 34 and the cathode post electrode 31 is canceled, and the total inductance is sufficiently reduced. can do. Therefore, the rate of increase of the gate reverse current (dI _GQ
/ Dt) can be sufficiently obtained, all of the main current can be diverted to the gate circuit, and device destruction due to turn-off failure can be prevented.

The electrode body 60 is connected to a gate driver (not shown) by bringing conductive plates electrically connected to the gate driver into contact with the auxiliary cathode terminal plate 61 and the gate terminal plate 63, respectively. The auxiliary cathode terminal plate 61 and the gate terminal plate 63 may be sandwiched between the plates. In this case, the conductive plate is formed in such a shape that it can come into contact with the auxiliary cathode terminal plate 61 and the gate terminal plate 63 with as large an area as possible, so that local concentration of the gate current is prevented.

<Second Embodiment><DeviceConfiguration> FIG. 7 shows a cross-sectional configuration of a GCT thyristor 200 as a press-contact type semiconductor device according to a second embodiment of the present invention.

In FIG. 7, the same components as those of the GCT thyristor 100 described with reference to FIG. 1 are denoted by the same reference numerals, and redundant description will be omitted.

In FIG. 7, a ring-shaped gate electrode 34 is in contact with the surface of gate electrode 29a of semiconductor substrate 28.
The gate terminal plate 83 is slidably contacted with the ring-shaped gate electrode 34.

The gate terminal plate 83 is a ring-shaped metal plate, and has an inner peripheral edge surface in contact with the rear surface of the ring-shaped gate electrode 34.

An insulator 82 is provided so as to be in close contact with the outer surface of the gate terminal plate 83 (the side opposite to the side on which the ring-shaped gate electrode 34 is provided). The insulator 82 has an inner peripheral edge bent once and extends along the wall surfaces of the anode strain buffer plate 32 and the anode post electrode 33, and the tip end thereof reaches near the main surface of the semiconductor substrate 28.

An auxiliary cathode terminal plate 81 is provided so as to be in close contact with the outer surface of the insulator 82 (the surface opposite to the surface in contact with the gate terminal plate 83). And the gate terminal plate 83. The auxiliary cathode terminal plate 81 has a ring shape, and its inner peripheral edge is fixed to the cathode post electrode 31.

The auxiliary cathode terminal plate 81, the insulator 82, and the gate terminal plate 83 are hermetically fixed so as to maintain electrical insulation between the auxiliary cathode terminal plate 81 and the gate terminal plate 83. Are formed as an integrated electrode body 80.

In a region 31b between the auxiliary cathode terminal plate 81 and the base 31a of the cathode post electrode 31, a disc spring or a disc spring for pressing the ring-shaped gate electrode 34 together with the electrode body 80 against the gate electrode 29a. A ring-shaped elastic body 35 such as a wave spring is provided. In addition,
The elastic body 35 presses the electrode body 80 via the ring-shaped insulator 36.

A cathode flange 26 is fixed to the edge of the cathode post electrode 31, and an anode flange 40 is fixed to the anode post electrode 33. In addition, between the cathode flange 26 and the anode flange 40, an insulating cylinder 71 made of an insulating material such as ceramic is provided so as to surround a main part of the GCT thyristor 200.
Are arranged. The insulating cylinder 71 is divided into a first insulating cylinder 71a and a second insulating cylinder 71b with an electrode body 80 interposed therebetween, and has a projection 82 for increasing a creepage distance. Therefore, the outer peripheral portion of the electrode body 80 projects outside from the side surface of the insulating cylinder 71. The insulating cylinder 71 is air-tightly fixed to the upper and lower surfaces of the electrode body 80.

The connecting plate 43a fixed to the lower end face of the first insulating cylinder 71a and the cathode flange 26 are air-tightly fixed, and the connecting plate 43b fixed to the upper end face of the second insulating cylinder 71b is connected to the anode flange. The GCT thyristor 200 has a hermetically sealed package structure.

<Manufacturing Process> Next, a manufacturing process of the GCT thyristor 200 will be described with reference to FIGS.

First, in the step shown in FIG. 8, a cathode post electrode 31 having a cathode flange 26 fixed to the edge thereof is prepared. The cathode strain buffer 30 is placed on the cathode post electrode 31.

Next, in the step shown in FIG. 9, the elastic body 35 and the ring-shaped insulator 36 are placed on the base portion 31a of the cathode post electrode 31.

Next, in the step shown in FIG. 10, the connection between the connecting plate 43a fixed to the lower end surface of the first insulating cylinder 71a and the cathode flange 26 is performed. Here, the connection plate 43
a and the cathode flange 26 are hermetically fixed at their respective outer peripheral edges by a method such as brazing.

Then, the auxiliary cathode terminal plate 81 is placed on the upper end surface of the first insulating cylinder 71a, and the auxiliary cathode terminal plate 8 is attached.
1 is airtightly fixed to the upper end surface of the first insulating cylinder 71a by brazing or the like. At this time, the elastic body 35 and the ring-shaped insulator 36 are sandwiched between the auxiliary cathode terminal plate 81 and the base portion 31a of the cathode post electrode 31, and the inner peripheral edge portion of the auxiliary cathode terminal plate 81 is fixed to the cathode post electrode 31.
It is fixed to the side wall by brazing. As a result, the elastic body 35 is compressed and acts so as to push up the auxiliary cathode terminal plate 81 in an upper direction (a direction in which the semiconductor substrate 28 is provided later).

Then, the insulator 82 and the gate terminal plate 83 are sequentially placed on the auxiliary cathode terminal plate 81. Auxiliary cathode terminal plate 81, insulator 82, gate terminal plate 83
Are fixed in an airtight manner so as to maintain electrical insulation between the auxiliary cathode terminal plate 81 and the gate terminal plate 83, for example, by using an adhesive or the like to form an electrode body 80 in which the three members are integrated. Note that the insulator 82 has a shape to be rotated, and
It is placed so as to be inserted into the cylindrical cathode post electrode 31.

Next, in the step shown in FIG. 11, the lower end surface of the second insulating cylinder 71b and the gate terminal plate 83 are hermetically fixed. Then, the ring-shaped gate electrode 34 is disposed so that the rear surface of the ring-shaped gate electrode 34 is located above the inner peripheral edge surface of the gate terminal plate 83, and the cathode strain buffer plate 30 is disposed.
The semiconductor substrate 28 is placed so that the cathode electrode 29b is located on the upper part of the.

Next, in the step shown in FIG. 12, the anode strain buffer plate 32 is placed on the surface (the surface opposite to the cathode electrode 29b) of the anode electrode (not shown) of the semiconductor substrate 28, and the anode strain buffer plate is placed. The anode post electrode 33 is placed on the upper part of the anode post electrode 32. In this case, an anode flange 40 is fixed to the edge of the anode post electrode 33, and the anode flange 40 and the connection plate 43b fixed to the upper end surface of the second insulating cylinder 71b are connected to the respective outer peripheral ends. GCT thyristor 20 is fixed airtight at the edge.
0 is completed.

In the above description, the auxiliary cathode terminal plate 81 has a ring shape and the inner peripheral edge is fixed to the side wall of the cathode post electrode 31 by brazing or the like. The cathode terminal plate 81 may have a disk shape. That is, the cathode post electrode 31
May be divided into two in the direction perpendicular to the axial direction, and the auxiliary cathode terminal plate 81 may be sandwiched between the divided surfaces. With such a configuration, the number of brazing steps can be reduced, and the manufacturing cost can be reduced.

<Characteristic Effects> As described above, since the auxiliary cathode terminal plate 81 and the gate terminal plate 83 are close to each other with the insulator 82 interposed therebetween, the gate terminal plate 68 Even when a current loop is formed in the auxiliary cathode terminal plate 81 via the gate electrode 34 and the cathode post electrode 31, the inductance is canceled and the total inductance can be sufficiently reduced. Therefore, the rate of increase of the gate reverse current (dI _GQ /
dt) can be sufficiently obtained, all of the main current can be diverted to the gate circuit, and element destruction due to turn-off failure can be prevented. Further, since the configuration of the gate terminal plate 83 is simplified, the manufacturing cost can be reduced.

The electrode body 80 is connected to a gate driver (not shown) by contacting conductive plates electrically connected to the gate driver with the auxiliary cathode terminal plate 81 and the gate terminal plate 83, respectively. The auxiliary cathode terminal plate 81 and the gate terminal plate 83 may be sandwiched between the plates. In this case, a local concentration of the gate current is prevented by making the shape of the conductor plate such that it can contact the auxiliary cathode terminal plate 81 and the gate terminal plate 83 with as large an area as possible.

[0072]

According to the pressure contact type semiconductor device according to the first aspect of the present invention, the electrode in which the gate terminal plate and the auxiliary cathode terminal plate which are in contact with the other end surface of the ring-shaped gate electrode are arranged close to each other. The body makes an electrical connection between the ring-shaped gate electrode and cathode electrode and the outside, so that the inductance caused by the current loop flowing from the gate terminal plate to the auxiliary cathode terminal plate via the ring-shaped gate electrode and cathode post electrode is canceled out. And the total inductance can be sufficiently reduced.

According to the pressure-contact type semiconductor device according to the second aspect of the present invention, since the electrode body also serves as the cathode flange, when the cathode flange is used as the auxiliary cathode terminal plate, the electrode terminal is not connected to the gate terminal plate. In addition, the inductance caused by the current loop flowing to the auxiliary cathode terminal plate via the ring-shaped gate electrode and the cathode post electrode is canceled, and the total inductance can be sufficiently reduced.

According to the pressure-contact type semiconductor device of the third aspect of the present invention, in the configuration of the pressure-contact type semiconductor device of the second aspect, the ring-shaped gate electrode is pressed against the gate electrode to thereby form the ring-shaped gate electrode. A specific configuration for reliably performing electrical connection between the gate electrode and the gate electrode can be obtained.

According to the pressure contact type semiconductor device of the fourth aspect of the present invention, the inductance caused by the current loop flowing from the gate terminal plate to the auxiliary cathode terminal plate via the ring-shaped gate electrode and the cathode post electrode is canceled. Therefore, the total inductance can be sufficiently reduced, and the configuration of the gate terminal plate is simplified, so that the manufacturing cost can be reduced.

According to the pressure-contact type semiconductor device of the fifth aspect of the present invention, in the configuration of the pressure-contact type semiconductor device of the fourth aspect, the ring-shaped gate electrode is pressed against the gate electrode to thereby form the ring-shaped gate electrode. A specific configuration for reliably performing electrical connection between the gate electrode and the gate electrode can be obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a press contact type semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a manufacturing process of the pressure contact type semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a diagram illustrating a manufacturing process of the press contact type semiconductor device according to the first embodiment of the present invention;

FIG. 4 is a diagram illustrating a manufacturing process of the press contact type semiconductor device according to the first embodiment of the present invention.

FIG. 5 is a diagram illustrating a manufacturing process of the press contact type semiconductor device according to the first embodiment of the present invention.

FIG. 6 is a diagram illustrating a manufacturing process of the press contact type semiconductor device according to the first embodiment of the present invention;

FIG. 7 is a sectional view illustrating a configuration of a press contact type semiconductor device according to a second embodiment of the present invention;

FIG. 8 is a diagram illustrating a manufacturing process of the press contact type semiconductor device according to the second embodiment of the present invention.

FIG. 9 is a diagram illustrating a manufacturing process of the press contact type semiconductor device according to the second embodiment of the present invention.

FIG. 10 is a diagram illustrating a manufacturing process of the press contact type semiconductor device according to the second embodiment of the present invention.

FIG. 11 is a diagram illustrating a manufacturing process of the press contact type semiconductor device according to the second embodiment of the present invention.

FIG. 12 is a view illustrating a manufacturing process of the press contact type semiconductor device according to the second embodiment of the present invention.

FIG. 13 is a cross-sectional view illustrating a configuration of a conventional pressure contact type semiconductor device.

FIG. 14 is a plan view illustrating a configuration of a conventional pressure contact type semiconductor device.

FIG. 15 is a circuit diagram illustrating an operation of the GCT thyristor.

[Explanation of symbols]

28 semiconductor substrate, 31 cathode post electrode, 34
Ring-shaped gate electrode, 35 elastic body, 60, 80 electrode body, 62, 82 insulator, 63, 83 gate terminal plate,
63a U-shaped area, 63b tip, 61, 81
Auxiliary cathode terminal plate, 71 insulating cylinder, 71a first insulating cylinder, 71b second insulating cylinder.

Claims (5)

[Claims] A semiconductor substrate having a gate electrode formed along an outer peripheral edge of one main surface, a cathode electrode formed inside the gate electrode, and an anode electrode formed on the other main surface; A cathode post electrode electrically connected to the electrode; a ring-shaped gate electrode having one end surface in contact with the gate electrode; and an electrode body for electrically connecting the ring-shaped gate electrode and the cathode post electrode to the outside. A gate terminal plate in contact with the other end surface of the ring-shaped gate electrode; an auxiliary cathode terminal plate electrically connected to the cathode post electrode; and at least the gate terminal plate and the auxiliary cathode A press-contact type semiconductor device comprising a laminated body in which an insulator provided between a terminal plate and electrically insulating the both is laminated. 2. An electrically insulating insulating cylinder including at least the semiconductor substrate and the ring-shaped gate electrode, wherein the electrode body is connected between the cathode post electrode and the insulating cylinder so as to maintain airtightness. The gate terminal plate is a ring-shaped metal plate having a U-shaped region formed by folding back the inner peripheral edge portion, and the outer surface of the folded portion defining the U-shaped region is the ring-shaped gate. The pressure contact type semiconductor device according to claim 1, wherein the pressure contact type semiconductor device is arranged so as to contact the other end surface of the electrode, and the electrode body is arranged so as to project to the outside of the side surface of the insulating cylinder. 3. An elastic body that urges the ring-shaped gate electrode in the direction of the gate electrode and presses the ring-shaped gate electrode against the gate electrode, wherein the elastic body is provided in the U-shaped region. 3. The pressure-contact type semiconductor device according to claim 2, wherein the ring-shaped gate electrode is urged in the direction of the gate electrode together with the folded portion. 4. An auxiliary insulating terminal tube including at least the semiconductor substrate and the ring-shaped gate electrode, wherein the auxiliary cathode terminal plate has an inner peripheral edge electrically connected to a side surface of the cathode post electrode. A ring-shaped metal plate connected, wherein the gate terminal plate is a ring-shaped metal plate arranged such that an inner peripheral edge surface is in contact with the other end surface of the ring-shaped gate electrode; The insulating cylinder has first and second insulating cylinders divided into two in a direction perpendicular to a cylindrical axis, and the electrode body is sandwiched between first and second insulating cylinders. 2. The pressure contact type semiconductor device according to claim 1, wherein the pressure contact type semiconductor device is disposed so as to protrude outward from the side surface. 5. An elastic body which urges the ring-shaped gate electrode in the direction of the gate electrode and presses the ring-shaped gate electrode against the gate electrode, wherein the elastic body is provided together with the electrode body with the ring. 5. The auxiliary cathode terminal plate is disposed at a position in contact with an inner peripheral edge of the auxiliary cathode terminal plate so as to urge the gate electrode in the direction of the gate electrode.
The press-contact type semiconductor device according to the above.