JPH10267970A - High frequency wave detector, transmitting power controller and method for installing high frequency wave detector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To control a transmitting power precisely in the wide range even at a low temperature by a method wherein a heater and a temperature sensor are incorporated in a wave detector, and the heater is controlled based on a detection temperature to hold a wave detecting diode at a specific temperature. SOLUTION: A temperature of a wave detecting diode 42 is detected by a temperature sensor 6, and a temperature detection signal 44 is supplied to a temperature control circuit 8. In the control circuit 8, a target temperature is set higher than a use temperature of a transmitter to which a transmission power controller has been previously mounted. When a detection temperature indicated by the temperature detection signal 44 is lower than a target temperature, the control circuit 8 further controls a heater 7 to heat by raising a heater control voltage 45, and when higher than a target temperature, the control circuit 8 drops heat generation of the heater 7 by dropping the heater control voltage 45, and holds constant a temperature of a wave detecting diode 42. Thereby, it is possible to widen the lowest limit of an input power range of a wave detector 4, and to control precisely a transmission power in the wide range.

Description

DETAILED DESCRIPTION OF THE INVENTION

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency microwave detecting device having a temperature compensation function, a transmission power control device using the high-frequency detecting device, and a high-frequency detecting device. The present invention relates to a method of installing a high-frequency detection device for mounting the antenna on a waveguide.

[0001]

2. Description of the Related Art FIG. 8 is a characteristic diagram showing a temperature characteristic of an input voltage to a detection output voltage of a general detection diode used in a high-frequency detection circuit. As shown in the figure, at low temperatures, when the input power is small, the detection output voltage drops extremely. Therefore, when detecting a minute high-frequency power signal at a low temperature, an accurate detection output cannot be obtained from the high-frequency detection circuit, and the operation of the control device to which the high-frequency detection circuit is applied becomes unstable. Therefore, various proposals have been made to compensate for a change in the detection output characteristic of the detection diode due to a temperature change.

FIG. 9 is a block diagram showing a configuration of a transmission power control device to which a conventional high-frequency detection circuit disclosed in Japanese Patent Application Laid-Open No. 3-62740 is applied. As shown in the figure, an input signal is power-amplified in a power amplifier circuit 20 and output via a directional coupler 30. Directional coupler 30
Is detected by a detection circuit 40 having a detection diode 42. At this time, the posistor resistor 90a
A temperature compensating circuit 90 having a voltage dividing resistor 90b and a voltage dividing resistor 90b changes the voltage supplied to the detection diode 42 according to the temperature. Then, the control circuit 5A supplies a control signal corresponding to the output of the comparison circuit 50 to the power amplification circuit 20.

Next, the operation of the circuit shown in FIG. 9 will be specifically described.

[0004] The directional coupler 30 extracts a part of the output of the power amplifier circuit 20 and supplies it to a detection circuit 40. The detection output voltage of the detection diode 42 in the detection circuit 40 depends on the temperature. When the temperature decreases, the operating point current of the detection diode 42 moves to a higher voltage side. Therefore, as shown in FIG. 8, the output voltage of the detection circuit 40 decreases as the temperature decreases as it is. Therefore, the posistor resistor 9
A temperature compensation circuit 90 having 0a is provided. Since the resistance value of the posistor resistor 90a changes with temperature fluctuation, the supply voltage to the detection diode 42 provided by the voltage-dividing resistor 90b also changes with temperature fluctuation.
Here, as the posistor resistor 90a, a resistor having a temperature-resistance characteristic capable of supplying a voltage that does not change the operating point current to the detection diode 42 even when the temperature fluctuates is used. The comparison circuit 50 receives the detection output independent of the temperature and the reference voltage, and outputs a voltage corresponding to the difference therebetween. The control circuit 5A supplies a signal instructing to change the amplification factor so that the output voltage of the comparison circuit 50 becomes 0 to the power amplification circuit 20 as a control signal. The power amplifying circuit 20 changes the amplification factor according to an instruction from the control signal. As a result, the output power of the power amplifying circuit 20 is controlled to have a constant value determined according to the reference voltage.

FIG. 10 is a block diagram showing a configuration of a transmission power control apparatus having another conventional high-frequency detection circuit disclosed in Japanese Patent Application Laid-Open No. 4-196622. In this example, a logarithmic converter 90 that performs logarithmic conversion of the detection output of the detection circuit 40 is used as a temperature compensation circuit.

Next, the operation of the circuit shown in FIG. 10 will be specifically described.

[0007] The directional coupler 30 extracts a part of the output of the power amplifier circuit 20 and supplies it to the detection circuit 40. The detection output voltage of the detection diode 42 depends on the temperature, and the temperature exponentially depends on the detection output voltage. Therefore, if the detection output voltage is passed through the logarithmic converter 90 and the constant in the logarithmic converter 90 is appropriately selected, an output independent of temperature can be obtained. The comparison circuit 50 receives the detection output independent of the temperature and the reference voltage, and outputs a voltage corresponding to the difference therebetween. The control circuit 5A determines that the output voltage of the comparison circuit 50 is zero.
To the power amplification circuit 20 as a control signal. The power amplifying circuit 20 changes the amplification factor according to an instruction from the control signal.
As a result, the output power of the power amplifying circuit 20 is controlled to have a constant value determined according to the reference voltage.

[0008]

However, the characteristics of the posistor resistor 90a and the like used in the temperature compensating circuit 90 may not be constant due to variations within the specifications of components. Further, there is a case where a posistor resistor 90a or the like that can obtain desired characteristics after compensation of the detection diode 42 cannot be obtained. In such a case, the signal supplied to the comparison circuit 50 provided at the subsequent stage of the high-frequency detection circuit at a low temperature cannot be made accurate. Further, in the operational amplifier generally used in the logarithmic converter 91 as an example of the temperature compensation circuit, when the detection output voltage is on the order of several mV, the input offset voltage and the temperature drift cannot be ignored. Therefore, when the detection output voltage is low, the operation of the control device to which the high-frequency detection circuit is applied becomes unstable. For example, it becomes difficult to control the transmission output voltage in the transmission power control device with good accuracy, and it becomes difficult to perform a wide range of output power control.

Therefore, the present invention provides a high-frequency detector which is hardly affected by the characteristics and characteristic variations of the components of the temperature compensation circuit and can provide a wide dynamic range detection output even at a low temperature, and a transmission using the high-frequency detector. An object of the present invention is to provide a power control device and an installation method for mounting the high-frequency detection device on a waveguide.

[0010]

According to a first aspect of the present invention, there is provided a high-frequency detecting device for detecting a high-frequency signal, a heating unit for heating the detecting unit, and a temperature detecting unit for detecting a temperature of the detecting unit. And temperature control means for controlling the heating means so that the temperature of the detection means is maintained at a predetermined value based on the output of the temperature detection means.

According to a second aspect of the present invention, there is provided a high-frequency detection device in which a detection means, a heating means and a temperature detection means are integrally formed.

According to a third aspect of the present invention, the high frequency detecting device is a high frequency detecting diode.

According to a fourth aspect of the present invention, there is provided a high-frequency detection device, wherein the heating means includes a heating element which generates heat according to an applied voltage, and the temperature detection means includes a temperature detection element which outputs a voltage corresponding to a detected temperature. The control means includes a temperature control circuit for controlling a voltage applied to the heating element based on a difference between a voltage from the temperature detection element and a reference voltage corresponding to a predetermined temperature value.

According to a fifth aspect of the present invention, in the high frequency detecting apparatus, the temperature control circuit compares the voltage from the temperature detecting element with the reference voltage, and outputs a count value corresponding to the output of the comparator. It is provided with a down counter and a DA converter which converts an output value of the up / down counter into an analog value and supplies the analog value to the heating element.

According to a sixth aspect of the present invention, there is provided a high-frequency detection device in which a temperature detecting element, a detecting means, and a heating element are formed close to each other on a substrate having high thermal conductivity.

According to a seventh aspect of the present invention, there is provided a high-frequency detecting device, wherein the substrate on which the temperature detecting element, the detecting means, and the heating element are formed comprises a waveguide for extracting a signal to be detected, and It is mounted while maintaining a high thermal resistance state between them.

According to the present invention, there is provided a transmission power control apparatus, comprising: a variable amplifying means for amplifying an input signal according to a control signal; Automatic power control means for providing a control signal to the amplifying means, and each of the above high-frequency detectors.

According to a ninth aspect of the present invention, there is provided a transmission power control device including an alarm processing unit for prohibiting transmission when the temperature of the detection unit is out of a predetermined range.

According to a tenth aspect of the present invention, there is provided a transmission power control apparatus including an alarm processing means for stopping the control of the variable amplifying means when the temperature of the detection means is out of a predetermined range.

According to the eleventh aspect of the present invention, there is provided a method for installing a high-frequency detection device, comprising: a high-frequency detection diode for detecting a high-frequency signal; a heating element for heating the high-frequency detection diode; Forming a high-frequency detection circuit including elements close to a substrate having high thermal conductivity; and bringing the substrate into contact with a waveguide from which a signal to be detected is derived, and contacting only a part of the substrate with the waveguide. Mounting.

According to a twelfth aspect of the present invention, there is provided a method for installing a high-frequency detection device, comprising: a high-frequency detection diode for detecting a high-frequency signal; a heating element for heating the high-frequency detection diode; and a temperature detection for detecting the temperature of the high-frequency detection diode. The method includes a step of forming a high-frequency detection circuit including elements close to a substrate having high thermal conductivity, and a step of attaching the substrate to a waveguide from which a signal to be detected is derived via a heat insulating material.

FIG. 1 is a block diagram showing a transmission power control apparatus to which a first embodiment of a high-frequency detection apparatus according to the present invention is applied. In the transmission power control device shown in FIG. 1, the input signal is level-adjusted by a variable attenuator 1 and then input to an amplifier 2 having a fixed amplification factor. The output of the amplifier 2 is output via the distributor 3 such as a directional coupler, and is also input to the high frequency detection circuit 49 having the detection diode 42. The detection output voltage from the high-frequency detection circuit 49 is input to the automatic power control circuit 5. The automatic power control circuit 5 controls the variable attenuator 1 so that the detection output voltage and the output voltage control signal (reference voltage) have the same value.

In the automatic power control circuit 5, the detection output voltage is input to the error amplifier 51. The error amplifier 51
The difference between the detection output voltage and the output voltage control signal is amplified and supplied to the variable attenuator driver 52. Variable attenuator driver 5
2 outputs a control signal corresponding to the output value of the error amplifier 51 to the variable attenuator 1 via the hold circuit 54.

The high-frequency detection circuit 49 includes a detector 4, a temperature sensor 6, and a heater 7, and the detector 4 is provided with the temperature sensor 6 and the heater 7. Further, the detector 4, the temperature sensor 6, and the heater 7 are integrally formed. The output of the temperature sensor 6 is input to a temperature control circuit 8. The temperature control circuit 8 supplies the heater 7 with a heater control voltage 45 corresponding to the value of the temperature detection signal 44 from the temperature sensor 6. Further, the temperature control circuit 8 supplies an alarm signal 102 to the alarm processing circuit 53 in the automatic power control circuit 5 under a predetermined condition. The alarm processing circuit 53 gives a predetermined hold value to the hold circuit 54 or cuts off the power supply of the amplifier 2 via the switch 55 according to the alarm signal 102.

Next, a specific operation of the transmission power control device shown in FIG. 1 will be described.

Variable attenuator 1, amplifier 2 and distributor 3
Operates in the same manner as the power amplification circuit 20 and the directional coupler 30 shown in FIGS. However, in this embodiment, the amplification factor of the amplifier 2 is constant, and the transmission power is controlled by controlling the attenuation factor of the variable attenuator 1. The distributor 3 extracts a part of the high-frequency output of the amplifier 2 and supplies it to the detector 4. The detector 4 detects the extracted high-frequency transmission power and outputs a detection output voltage corresponding to the transmission power. The error amplifier 51 in the automatic power control circuit 5 amplifies the difference between the detection output voltage and the voltage indicated by the output voltage control signal 101. The variable attenuator driver 52 controls the variable attenuator 1 according to the output of the error amplifier 51.
That is, it instructs the variable attenuator 1 to control the attenuation so that the detection output voltage and the voltage indicated by the output voltage control signal 101 become the same. The alarm signal 1
02 is not output, the alarm processing circuit 53
Is a variable attenuator driver 5 for the hold circuit 54.
2 is given to the variable attenuator 1.

As described above, the transmission power is maintained at a value corresponding to the value indicated by the output voltage control signal 101, but the stability of the transmission power is determined by the stability of the detector 4.

Detection diode 42 in detector 4
Are heated by the heater 7. The temperature of the detection diode 42 is detected by the temperature sensor 6. The temperature sensor 6 gives the detected temperature to the temperature control circuit 8 as a temperature detection signal 44. In the temperature control circuit 8, a target temperature higher than the operating temperature of the transmitter in which the transmission power control device is mounted is set in advance. If the detected temperature indicated by the temperature detection signal 44 is lower than the target temperature, the temperature control circuit 8
Increases the heater control voltage 45 so that the heater 7 further generates heat. When the detected temperature indicated by the temperature detection signal 44 is higher than the target temperature, the temperature control circuit 8 lowers the heater control voltage 45 to reduce the heat generated by the heater 7. Thus, the temperature of the detection diode 42 is kept constant.

In order to increase the dynamic range of the detector 4 under low input power, it is necessary to lower the lower limit of the input power at which a significant detection output voltage can be output, but as shown in FIG. Then, the lower limit of the input power that can output a significant detection output voltage is not low. For example, the error amplifier 5
Assuming that the lower limit at which 1 can operate is 3 mV, when the temperature of the detecting diode 42 is -30 ° C., the input power is +17.
It can be used only in the range up to about dBm. However,
If the temperature is fixed at + 84 ° C., a practical detection output voltage is output even if the input power of the detection diode is reduced to about +6 dBm. That is, the dynamic range can be expanded by about 11 dBm. Therefore, the temperature control circuit 8 sets the temperature of the detection diode 42 to +84, for example.
制 御 C is controlled so as to be fixed.

As described above, the transmission power control device has a structure including the heating means for heating the detection means and the temperature control means for controlling the heating means so that the temperature of the detection means is maintained at a predetermined value. Therefore, the lower limit of the input power range of the detection means can be widened, and the transmission power can be controlled more accurately over a wider range than in a transmission power control device using a conventional high-frequency detection circuit.

It is also conceivable that the temperature control becomes impossible for some reason such as the heater 7 being cut off. In consideration of such a case, the temperature control circuit 8 outputs the alarm signal 102 when the detected temperature exceeds a predetermined range. For example, assume that the lower limit of a practical detection output voltage is 3 mV. The input power range of the detection diode 42 is set to 10 dB.
When the temperature of the detection diode 42 falls below about 50 ° C. from the characteristic shown in FIG.
mV detection output voltage cannot be output. Thus, the temperature control circuit 8 outputs an alarm signal 102 when the detected temperature falls below 50 ° C.

The alarm signal 102 is input to the alarm processing circuit 53. When the alarm signal 102 is input, the alarm processing circuit 53 controls, for example, to stop the control of the variable attenuator 1. That is, the hold circuit 5
4 is instructed to give a fixed value to the variable attenuator 1. Thereafter, the variable attenuator 1 gives a fixed attenuation to the input signal. Therefore, the automatic transmission power control does not work, but the situation where the transmission power is controlled based on the detection output voltage having a large error is avoided.

Further, when the alarm signal 102 is input, the alarm processing circuit 53 may control to stop the transmission. For example, the alarm processing circuit 53 shuts off the switch 55 that supplies the power supply voltage to the amplifier 2 so that power is not supplied to the amplifier 2.

FIG. 2 is a block diagram showing a high-frequency detection circuit according to a second embodiment of the present invention.

The high-frequency detection circuit 49 shown in FIG. 2 includes a detection diode 42, a detector comprising a resistor, a capacitor and a coil, a temperature detection diode 41 for realizing temperature detection means, and a heating diode for realizing heating means. 43. Temperature detection diode 41
A current source 48 is connected to the anode side of the device, and a current I1 is supplied from the current source 48. On the anode side of the temperature detecting diode 41, a voltage VT proportional to the temperature appears as a temperature detecting signal 44. Further, the heater control voltage 45 is supplied to the heating diode 43 via a resistor. Also,
The temperature control circuit 8 calculates the voltage V of the temperature detecting diode 41.
Comparator 81, Comparator 8 for comparing T with reference voltage Vref
1, an up / down counter 82 that outputs a count value corresponding to the output of the D / A converter 83, a DA converter 83 that converts the output value of the up / down counter 82 into an analog value, and a buffer 84.
It consists of. Then, the output of the buffer 84 becomes the heater control voltage 45.

FIG. 3 shows the high-frequency detection circuit 4 shown in FIG.
9 is a front view illustrating a mounting example of a substrate 49A on which a mounting 9 is mounted.

As shown in the figure, the high frequency detection circuit 49
It is integrated as one chip. On the substrate 49A, the cathode sides of the temperature detecting diode 41 and the heat generating diode 43 are grounded via the terminal 221.
The anode side of the temperature detecting diode 41 reaches the output terminal 222 via the bonding wire 202 and the bonding pad 203, and the anode side of the heating diode 43 reaches the output terminal 223 via the bonding wire 202 and the bonding pad 203. . The detection output voltage 46 of the detection diode 42 is applied to the output terminal 22.
4, 225, and the input side of the detection diode 42 reaches a portion formed as a coupler unit 3B for extracting a part of the power when a waveguide is used as the directional coupler 30. . FIG. 3 also shows a radial stub 228 and an open stub 229 for short-circuiting a high-frequency signal. In addition, hatched lines in the drawing indicate resistance portions.

Next, the operation of the high-frequency detection circuit 49 shown in FIG. 2 will be described with reference to the characteristic diagram of FIG.

FIG. 4A shows a diode at, for example, 84 ° C.
FIG. 4B shows an example of the relationship between the current of the diode and the amount of heat generation (or temperature rise). As shown in FIG. 4A, when the temperature of the temperature detecting diode 41 is 84 ° C., it is assumed that the anode voltage is 0.3 V when a current of 1 mA flows.
Then, 1 is supplied from the current source 48 to the temperature detecting diode 41.
When a constant current of mA is supplied, the voltage VT becomes 0.
If the voltage is kept at 3V, the temperature of the temperature detecting diode 41 is kept at 84 ° C.

The distance between the heat generating diode 43 and the temperature detecting diode 41 on the substrate 49A,
If the distance between the heating diode 43 and the detecting diode 42 is equal and the thermal resistance between the three diodes is small, the temperature of the temperature detecting diode 41 becomes 84
When the temperature is maintained at ° C, the temperature of the detection diode 42 is also maintained at approximately 84 ° C. Therefore, in order to reduce the thermal resistance, the substrate 49A is manufactured so that the distance between the three diodes is as small as possible. As the material of the substrate 49A, a material having as high a thermal conductivity as possible, for example, ceramic is adopted.

The comparator 81 is supplied with 0.3 V as the reference voltage Vref. Actual voltage VT is 0.3V
If it is higher, the comparator 81 supplies an instruction voltage for decreasing the count value to the up / down counter 82. The up / down counter 82 decreases the count value according to the instruction. Since the count value of the up / down counter 82 is given to the heating diode 43 via the DA converter 83 and the buffer 84, the heater control voltage 45 decreases in this case. As a result, the current I2 flowing through the heat-generating diode 43 decreases, and FIG.
As shown in (5), the amount of heat generated by the heat generating diode 43 decreases.

When the actual voltage voltage VT is lower than 0.3 V, the comparator 81 gives an instruction voltage for increasing the count value to the up / down counter 82. The up / down counter 82 increases the count value according to the instruction. Therefore, the heater control voltage 45 increases. As a result, the current I flowing through the heating diode 43
2 increases, and the amount of heat generated by the heat generating diode 43 increases, as shown in FIG.

By the above control, the temperature of the detection diode 42 is kept at approximately 84 ° C. That is,
Even if the input power of the detection diode 42 is reduced to about +6 dBm, a practical detection output voltage that can be used for, for example, transmission power control is output. In this case, since the temperature detecting diode 41 and the heat generating diode 43 are integrally formed on one substrate together with the detecting diode 42, it is possible to realize higher temperature control accuracy and responsiveness. In addition, it is possible to increase the thermal resistance between the integrated unit and the other parts, thereby reducing power consumption.

FIG. 5 shows a waveguide 3 as the directional coupler 30.
When A is used, it is explanatory drawing which shows an example of the mounting method of the board | substrate 49A to the waveguide 3A for increasing the thermal resistance of the board | substrate 49A and other parts. The mounting method shown in FIG. 5 (A) uses the substrate 49A so that heat does not escape as much as possible.
This is a method in which the light guide is installed without being in close contact with the mounting portion 230 on the outer wall of the waveguide 3A. In this case, in order to secure the grounding of the substrate 49A, the substrate 49A is brought into point contact with the mounting portion 230, but other portions are prevented from contacting the mounting portion 230. The mounting method shown in FIG.
This is a method in which a heat insulating material 231 is attached to 9A and installed.

In this embodiment, an example is shown in which the high-frequency detection circuit 49 is integrated on one chip. However, the detection diode 42, the temperature detection diode 41, and the heat generation diode 43 are replaced with other circuits and A monolithic IC including a line may be integrated together.

FIG. 6 is a block diagram showing a high-frequency detection circuit according to a third embodiment of the present invention. FIG. 6 shows a detector including the detection diode 42 and the like, the temperature detection diode 41 for realizing the temperature detection means, and the FE for realizing the heating means.
A high-frequency detection circuit 49 in which T47 and T47 are integrally formed is shown.

FIG. 7 shows the high-frequency detection circuit 4 shown in FIG.
9 is a front view showing a mounting example of a substrate 49B on which a mounting 9 is mounted.

As shown in the figure, the high-frequency detection circuit 49
It is integrated as one chip. Integrated substrate 4
9B, the temperature detecting diode 41 and the FET
The source side of 47 is grounded via a terminal 221. The anode side of the temperature detecting diode 41 reaches the output terminal 222 via the bonding wire 202 and the bonding pad 203, and the gate of the FET 47 is connected to the bonding wire 202 and the bonding pad 203.
To the output terminal 223. The drain side of the FET 47 reaches the power supply terminal 227 via the bonding wire 202 and the bonding pad 203. The detection output voltage 46 of the detection diode 42 is output to output terminals 224 and 225.
The input side of the detection diode 42 reaches a portion formed as a coupler unit 3B that extracts a part of the power when a waveguide is used as the directional coupler 30. FIG. 6 shows a radial stub 228 and an open stub 22 for short-circuiting a high-frequency signal.
9 is also shown. In addition, hatched lines in the drawing indicate resistance portions.

Although not shown in FIG. 6, a current source 48 as shown in FIG. 2 is connected to the anode side of the temperature detecting diode 41, and the anode side of the temperature detecting diode 41 and the gate of the FET are connected. Between them, a temperature control circuit 8 as shown in FIG. 2 is provided.

As in the case of the above-described embodiment,
The distance between the FET 47 and the temperature detecting diode 41 is equal to the distance between the FET 47 and the detecting diode 42, and the thermal resistance between each diode and the FET 47 is reduced.
47 so that the distance between the substrates 47 is as small as possible.
9B is produced. Also, as the material of the substrate 49B, a material having as high thermal conductivity as possible, for example, ceramic is used.

Therefore, the detection diode 42 is maintained at a desired constant temperature by the control of the temperature control circuit 8, as in the embodiment shown in FIG. According to such an embodiment as well, the detector, the heating means and the temperature detecting means are integrally formed, and the thermal resistance between the integrally formed one and the other parts can be increased, and power consumption can be reduced. It is possible to realize a small temperature control with higher accuracy and responsiveness.

In order to increase the thermal resistance between the substrate 49B and the other parts, the substrate 49B is formed as shown in FIGS.
As shown in (2), it is installed so as not to be in close contact with the mounting portion 230 on the outer wall of the waveguide 3A, or is installed via a heat insulator 231.

Also in this case, the high-frequency detection circuit 49
Are integrated on a single chip, but the detection diode 42, the temperature detection diode 41 and the FET 4
7 may be integrated together with a monolithic IC including other circuits and lines.

[0053]

As described above, according to the present invention, the high-frequency detection device comprises a heating means for heating the detection means and a temperature control means for controlling the heating means so that the temperature of the detection means is maintained at a predetermined value. Therefore, there is an effect that the lower limit of the input power range of the detection means can be widened, and power control can be accurately performed over a wide range.

When the detecting means, the heating means for heating the detecting means, and the temperature detecting means for detecting the temperature of the detecting means are integrally formed, the lower limit of the input power range of the detecting means is increased. Can also provide a detection output with a wide dynamic range. Further, it is possible to realize a device with low power consumption and higher accuracy and responsiveness of temperature control.
Further, there is an effect that the high-frequency detection circuit having the temperature compensation function is reduced in size and cost.

Further, since the transmission power control device is configured to include the high-frequency detection device as described above, the lower limit of the input power range of the detection means can be widened, and a conventional high-frequency detection circuit is used. As compared with the transmission power control device, there is an effect that transmission power can be accurately controlled over a wide range.

Further, the method of installing the high-frequency detector is such that the substrate on which the temperature detecting element, the detecting means and the heating element are formed is connected to the waveguide for deriving the signal to be detected by the high heat between the substrate and the portion other than the substrate. Since the method includes the step of mounting while maintaining the resistance state, it is possible to increase the thermal resistance between the substrate and the other parts, and by doing so, it is possible to reduce the power consumption. .

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating a transmission power control device to which a high-frequency detection device according to a first embodiment of the present invention is applied.

FIG. 2 is a block diagram illustrating a configuration of a high-frequency detection circuit and a temperature control circuit according to a second embodiment of the present invention.

FIG. 3 is a front view showing a mounting example of a substrate on which the high-frequency detection circuit shown in FIG. 2 is mounted.

4A shows an example of a voltage-current characteristic of the high-frequency detection circuit shown in FIG. 2, and FIG. 4B shows a current and a heating value (or temperature rise) of the high-frequency detection circuit shown in FIG. FIG. 9 is a characteristic diagram showing an example of the relationship with the following.

FIG. 5 is an explanatory diagram showing an example of how to mount a substrate on which the high-frequency detection circuit shown in FIG. 2 is mounted to a waveguide when a waveguide is used as a directional coupler.

FIG. 6 is a block diagram illustrating a configuration of a high-frequency detection circuit according to a third embodiment of the present invention.

FIG. 7 is a front view showing a mounting example of a board on which the high-frequency detection circuit shown in FIG. 6 is mounted.

FIG. 8 is a characteristic diagram showing a temperature characteristic of an input voltage of a general detection diode versus a detection output voltage.

FIG. 9 is a block diagram showing a transmission power control device to which a conventional high-frequency detection circuit is applied.

FIG. 10 is a block diagram showing a transmission power control device to which another conventional high-frequency detection circuit is applied.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Variable attenuator 2 Amplifier 3 Distributor 4 Detector 5 Automatic power control circuit 6 Temperature sensor 7 Heater 8 Temperature control circuit 41 Diode for temperature detection 41 42 Detection diode 43 Diode for heat generation 47 FET 49 High frequency detection circuit 51 Error amplifier 52 Variable attenuator driver 53 Alarm processing circuit 54 Hold circuit 55 Switch 49A, 49B Board

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI // H03F 3/60 H03F 3/60

Claims (12)

[Claims] A detecting means for detecting a high-frequency signal; a heating means for heating the detecting means; a temperature detecting means for detecting a temperature of the detecting means; and a detecting means based on an output of the temperature detecting means. A high-frequency detection device comprising: a temperature control unit that controls the heating unit so that the temperature is maintained at a predetermined value. 2. The high-frequency detection device according to claim 1, wherein the detection means, the heating means, and the temperature detection means are integrally formed. 3. The high-frequency detection device according to claim 2, wherein the detection means is a high-frequency detection diode. 4. The heating means includes a heating element that generates heat in accordance with an applied voltage; the temperature detection means includes a temperature detection element that outputs a voltage corresponding to a detected temperature; The high-frequency detection device according to claim 2, further comprising a temperature control circuit that controls a voltage applied to the heating element based on a difference between the voltage and a reference voltage corresponding to a predetermined temperature value. 5. A temperature control circuit comprising: a comparator for comparing a voltage from a temperature detecting element with a reference voltage; an up / down counter for outputting a count value according to an output of the comparator; 5. The high frequency detection device according to claim 4, further comprising a DA converter that converts an output value into an analog value and supplies the analog value to the heating element. 6. The high-frequency detection device according to claim 4, wherein the temperature detection element, the detection means, and the heating element are formed close to each other on a substrate having high thermal conductivity. 7. A substrate on which a temperature detecting element, a detecting means, and a heating element are formed is mounted on a waveguide for deriving a signal to be detected while maintaining a high thermal resistance state between the substrate and a portion other than the substrate. 7. The high-frequency detection device according to claim 6, wherein: 8. A variable amplifying means for amplifying an input signal according to a control signal, and an automatic supply means for supplying the control signal to the variable amplifying means so that an output of a detecting means for detecting an output of the variable amplifying means is constant. A transmission power control device comprising: a power control unit; and a high-frequency detection device according to any one of claims 1 to 7. 9. The transmission power control device according to claim 8, further comprising alarm processing means for prohibiting transmission when the temperature of the detection means is out of a predetermined range. 10. The transmission power control device according to claim 8, further comprising alarm processing means for stopping control of the variable amplifying means when the temperature of the detection means deviates from a predetermined range. 11. A high-frequency detection circuit that includes a high-frequency detection diode that detects a high-frequency signal, a heating element that heats the high-frequency detection diode, and a temperature detection element that detects the temperature of the high-frequency detection diode. A method for installing a high-frequency detection device, which is formed close to a substrate, wherein the substrate is mounted on a waveguide from which a signal to be detected is derived by bringing only a part of the substrate into contact with the waveguide. 12. A high-frequency detection diode that detects a high-frequency signal, a heating element that heats the high-frequency detection diode, and a high-frequency detection circuit that includes a temperature detection element that detects the temperature of the high-frequency detection diode are provided with a high thermal conductivity. An installation method of a high-frequency detection device formed close to a substrate and mounting the substrate to a waveguide through which a signal to be detected is derived via a heat insulating material.