JPH10251486A - Resin composition for semiconductor sealing and semiconductor device sealed therewith - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a resin composition for semiconductor sealing excellent in safety, reliability of humidity resistance and flame retardancy by mixing a thermosetting resin with a curing agent, a specified metal hydroxide treated with a specified silicone compound, a specified metal oxide and an inorganic filler. SOLUTION: This composition comprises a thermosetting resin, a curing agent, a metal hydroxide represented by the formula: m(Ma Ob ).CH2 O (M is a metallic element; a, b and c are positive numbers; and m is a positive number of 1 or greater) and treated with a silicone compound represented by the formula (x and y are integers; R1 , R2 and R3 , which may be the same or different from each other, are each -CH3 , -OH, -NH2 , -H or the like), a metal oxide represented by the formula: m'(Qd Qe ) (Q is a metallic element belonging to a group selected among groups IVa, Va, VIa, VIIa, VIII, Ib and IIb in the periodic table and is different from metallic element M in the metal hydroxide; d and e are positive numbers; and m' is a positive number of 1 or greater) and an inorganic filler.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation having excellent flame retardancy and moisture resistance reliability, and a semiconductor device using the same.

[0002]

2. Description of the Related Art Conventionally, semiconductor devices such as transistors, ICs and LSIs have been sealed with ceramics and the like to form semiconductor devices. However, recently, from the viewpoint of cost and mass productivity, a resin-sealed type using plastic has been used. Semiconductor devices have become mainstream. Epoxy resin compositions have conventionally been used for this type of resin sealing and have achieved good results. However, due to technological innovation in the semiconductor field, the degree of integration has been improved, the element size has been increased, and the wiring has been miniaturized.
There is also a tendency for packages to be smaller and thinner, and accordingly, there is a demand for further improvement in reliability of sealing materials.

On the other hand, it is essential that electronic components such as semiconductor devices conform to UL94 V-0, which is a flame retardant standard. Conventionally, as a method of imparting a flame retardant effect to a resin composition for semiconductor encapsulation, a method of adding a brominated epoxy resin and antimony oxide has been generally performed.

[0004]

However, there are two major problems with the above-mentioned flame-retarding technology.

[0005] The first problem is the harmfulness of antimony trioxide itself, the harmfulness to the human body due to the generation of hydrogen bromide, bromide-based gas, antimony bromide and the like during combustion, corrosiveness to equipment, and Environmental safety such as industrial waste produced during the sealing process and disposal of used semiconductor devices has become a problem.

A second problem is that when a semiconductor device employing the above-described flame-retarding technology is left at a high temperature for a long period of time, the aluminum wiring on the semiconductor element is corroded by the effect of liberated bromine, resulting in failure of the semiconductor device. This causes a problem of deterioration in high-temperature reliability.

[0007] In order to solve the above problems, a method has been proposed in which a non-halogen / non-antimony metal hydroxide is added as an inorganic flame retardant as a flame retardant.
However, this method requires a large amount (for example, 40% by weight).
Metal hydroxides must be used, which leads to another major problem.

[0008] The first problem is that the semiconductor device is liable to swell or crack during soldering. 2. Description of the Related Art In recent years, surface mounting has become the mainstream as a mounting method for semiconductor devices, and soldering methods such as solder immersion, infrared reflow, and vapor phase reflow are selected and used at the time of soldering. Regardless of which process is adopted, the semiconductor device is exposed to a high temperature (usually 215 to 260 ° C.). Therefore, in a conventional semiconductor device formed by resin sealing using a resin composition to which a metal hydroxide is added, Due to the high water absorption of metal hydroxide,
There is a problem in that the semiconductor device swells or cracks due to rapid vaporization of the absorbed moisture, which is a so-called decrease in solder resistance.

A second problem is that the semiconductor device functions under a high-temperature and high-humidity environment of 80 to 130 ° C. and a relative humidity of 70 to 100% in terms of humidity resistance reliability. In addition, in a semiconductor element that generates a large amount of heat or a semiconductor device mounted around an engine of an automobile, a dehydration reaction occurs when used for a long period of time, so that there is a possibility that a problem that the moisture resistance reliability is reduced may occur.

[0010] As described above, the conventional flame-retardant technology has the above-mentioned problems, and is a safe and non-polluting material which does not generate harmful gas during combustion. Does not cause swelling or cracking of semiconductor devices due to dehydration of metal hydroxide, and does not cause corrosion of aluminum wiring on semiconductor elements or deterioration of humidity resistance reliability even if left in a high temperature and high humidity atmosphere for a long time. Development of technology is strongly desired. Accordingly, the present applicant has proposed a thermosetting resin composition for semiconductor encapsulation using a metal hydroxide and a metal oxide together with a thermosetting resin and a curing agent, and has solved the above-mentioned problems (see, No. 7-507466). Although the use of this thermosetting resin composition for semiconductor encapsulation certainly improved the flame retardancy and the moisture resistance reliability, it has been further improved with the recent technological innovation in the semiconductor field. There is a need to meet the demand.

The present invention has been made in view of such circumstances, and provides a resin composition for semiconductor encapsulation which is excellent not only in safety but also in moisture resistance reliability and flame retardancy, and a semiconductor device using the same. Aim.

[0012]

In order to achieve the above-mentioned object, the present invention provides, as a first gist, a resin composition for semiconductor encapsulation containing the following components (a) to (e). (A) thermosetting resin. (B) Curing agent. (C) a metal hydroxide represented by the following general formula (1):
A treated metal hydroxide which is treated with a silicone compound represented by the following general formula (2).

[0013]

Embedded image m (M _a O _b ) · cH ₂ O (1) [In the above formula (1), M is a metal element;
b and c are positive numbers, and m is a positive number of 1 or more. ]

[0014]

Embedded image (D) A metal oxide represented by the following general formula (3).

[0015]

M ′ (Q _d O _e ) (3) [In the above formula (3), Q represents IVa, V in the periodic table.
a, VIa, VIIa, VIII, Ib, IIb are metal elements belonging to the group selected from the group consisting of metal elements different from M in the above formula (1). D and e are positive numbers, and m 'is a positive number of 1 or more. (E) Inorganic filler.

In a second aspect of the present invention, there is provided a semiconductor device in which a semiconductor element is sealed using the above resin composition for semiconductor sealing.

That is, the present inventors have conducted a series of studies in order to obtain a resin composition for semiconductor encapsulation which is excellent not only in safety but also in moisture resistance reliability and flame retardancy. During the course of the study, various compounds were tested to obtain new flame retardants that could replace conventional flame retardants. As a result, a treatment obtained by using a thermosetting resin as a resin and treating a metal hydroxide represented by the above general formula (1) with a silicone compound represented by the above general formula (2) as a flame retardant When the used metal hydroxide is used in combination with the metal oxide represented by the above general formula (3), the flame retardant of these combined use is safe and non-polluting, and further, is a sealing resin excellent in moisture resistance reliability. The present inventors have found that a forming material can be obtained, and have reached the present invention.

Further, instead of the metal hydroxide represented by the general formula (1) and the metal oxide represented by the general formula (3), the metal hydroxide and the metal oxide are complexed. Even if the composite metal hydroxide in the composite form is used, as described above, the composite metal hydroxide is safe and pollution-free,
Excellent flame retardancy and moisture resistance reliability are obtained.

[0019]

Next, embodiments of the present invention will be described in detail.

The resin composition for semiconductor encapsulation used in the present invention comprises a thermosetting resin (component (A)) and a curing agent (component (B)).
And a special metal hydroxide (component (c)), a specific metal oxide (component (d)), and an inorganic filler (component (e)). It has a tablet shape.

Examples of the thermosetting resin (component (a)) include an epoxy resin, a polymaleimide resin, an unsaturated polyester resin, and a phenol resin. Particularly, in the present invention, it is preferable to use an epoxy resin or a polymaleimide resin.

The epoxy resin is not particularly limited, and a conventionally known epoxy resin is used. For example, bisphenol A type, phenol novolak type, cresol novolak type, biphenyl type and the like can be mentioned.

Further, the above-mentioned polymaleimide resin includes:
It is not particularly limited and conventionally known ones are used.
It has two or more maleimide groups in one molecule. For example, N, N'-4,4'-diphenylmethanebismaleimide, 2,2-bis- [4- (4-maleimidophenoxy) phenyl] propane and the like can be mentioned.

As the curing agent (component (b)) used together with the thermosetting resin (component (a)), for example, conventionally known ones such as phenolic resin, acid anhydride and amine compound are used. When an epoxy resin is used as the thermosetting resin, a phenol resin is preferably used. Examples of the phenol resin include phenol novolak, cresol novolak, bisphenol A type novolak,
Examples include naphthol novolak and phenol aralkyl resin.

The curing agent when using a polymaleimide resin as the thermosetting resin is not particularly limited, and a conventionally known curing agent is used. Examples thereof include alkenylphenols and amines obtained by reacting the above-mentioned curing agent for epoxy resin with allyl halide in the presence of alkali.

The special metal hydroxide (c component) used together with the thermosetting resin (a component) and the curing agent (b component) is a metal hydroxide represented by the following general formula (1). And a silicone compound represented by the following general formula (2).

[0027]

Embedded image m (M _a O _b ) · cH ₂ O (1) [In the above formula (1), M is a metal element;
b and c are positive numbers, and m is a positive number of 1 or more. ]

[0028]

Embedded image

With respect to the metal hydroxide represented by the general formula (1), M representing the metal element in the formula (1) is A
1, Mg, Ca, Ni, Co, Sn, Zn, Cu, F
e, Ti, B and the like.

As a specific representative example of the metal hydroxide represented by the above formula (1), Al ₂ O ₃ .cH ₂ O (0 <c
≦ 3), MgO · cH ₂ O (0 <c ≦ 1), CaO · c
H ₂ O (0 <c ≦ 1), Ni _b O · cH ₂ O (0.5 <
b ≦ 2, 0 <c ≦ 2, CoO _b · cH ₂ O (1 ≦ b ≦
2,0 <c ≦ 2), PbO _b .cH ₂ O (0.5 ≦ b ≦
2, 0 <c ≦ 2), SnO _b .cH ₂ O (1 ≦ b ≦ 2)
0 <c ≦ 2), ZnO · cH ₂ O (0 <c ≦ 1), Fe
O _b · cH ₂ O (1 ≦ b ≦ 1.5, 0.5 ≦ c ≦ 1.
5), CuO _b .cH ₂ O (0.5 ≦ b ≦ 1, 0 <c ≦
1) and the like. These are used in combination of two or more. In particular, when two or more kinds are used together, it is also effective to use them by mechanically mixing them.

Among the metal hydroxides represented by the general formula (1), a metal hydroxide having a large endothermic energy upon dehydration per unit weight is preferably used. further,
Since it is preferable to use a material that generates endothermicity due to dehydration near the decomposition temperature of the thermosetting resin, MgO · cH ₂ O (0 <c
≦ 1), it is particularly preferable to use Al ₂ O ₃ .cH ₂ O (0 <c ≦ 3).

In the thermal properties of the metal hydroxide represented by the general formula (1), the dehydration start temperature is preferably 200 ° C. or higher. Particularly preferably, the dehydration start temperature is 26.
0 ° C or higher. Incidentally, the dehydration start temperature,
This is a value measured at a heating rate of 10 ° C./min by a thermogravimetric method (measured in the atmosphere) using a thermobalance, and the temperature when the weight loss on heating reaches 5% by weight, and the differential weight loss on heating ( The value obtained by linearly differentiating the heating weight loss with time, that is, the heating weight loss rate) exceeds 0.5% by weight / min, whichever is lower.

Specific representative examples of the silicone compound represented by the general formula (2) include dimethyl silicone oil (SH200, manufactured by Dow Corning Toray Co., Ltd.) and OH silicone oil at both ends (PRX-413; Dow Corning), methylphenyl silicone oil (SH510, manufactured by Dow Corning Toray), methyl hydrogen silicone oil (SH1107, manufactured by Toray
Dow Corning), polyether-modified silicone oil (BY16-005, Dow Corning Toray), alcohol-modified silicone oil (BY16-8)
48, Dow Corning Toray), amino-modified silicone oil (BY16-828, Dow Corning Toray), epoxy-modified silicone oil (SF841)
1, BY16-839, manufactured by Dow Corning Toray),
Carboxy-modified silicone oil (SF8418, BY
16-750, manufactured by Dow Corning Toray), mercapto-modified silicone oil (BY16-838, manufactured by Dow Corning Toray), and the like. These may be used alone or in combination of two or more. Above all, a silicone compound having a functional group such as an OH group or an H group is preferably used because it reacts and adheres to the surface of the metal hydroxide to form a strong water-repellent film.

The method of treating the metal hydroxide represented by the general formula (1) with the silicone compound represented by the general formula (2) is not particularly limited. In the present invention, as the above-mentioned treatment method, of course, an aggressive treatment method of reacting and attaching the silicone compound to the surface of the metal hydroxide by a conventionally known method, as well as other components, together with other components It also includes a process for simply mixing the two. In particular, as the treatment method in the present invention, an aggressive treatment method in which the silicone compound is reacted and adhered to the surface of the metal hydroxide is preferable. For example, there is a treatment method in which the metal hydroxide and the silicone compound are stirred and mixed in a solvent, and then the solvent is removed.

Thus, the metal hydroxide represented by the general formula (1) is treated with the silicone compound represented by the general formula (2), that is, by using the silicone compound, The metal hydroxide represented by (1) and the metal oxide represented by the following formula (3) are used together with the flame retardancy-improving effect and the moisture-proof reliability. .

When the metal hydroxide represented by the general formula (1) is treated with the silicone compound represented by the general formula (2), the amount of the silicone compound used is 3 It is preferable to set within the range of -20% by weight. Particularly preferably, the content is 3 to 10% by weight. That is, if the amount of the silicone compound used is less than 3% by weight, it is difficult to obtain the excellent effect of improving the moisture resistance reliability obtained by using the silicone compound, and if the amount of the silicone compound exceeds 20% by weight. This is because the mechanical strength of the resin composition containing them tends to decrease.

The specific metal oxide (two components) used together with the thermosetting resin (component (a)), the curing agent (component (b)) and the special metal hydroxide (component (c)) is represented by the following general formula (3): It is represented by

[0038]

M ′ (Q _d O _e ) (3) [In the above formula (3), Q is IVa, V in the periodic table.
a, VIa, VIIa, VIII, Ib, IIb are metal elements belonging to the group selected from the group consisting of metal elements different from M in the above formula (1). D and e are positive numbers, and m 'is a positive number of 1 or more. ]

The present invention is characterized in that the above-mentioned special metal hydroxide (component (c)) is used in combination with this metal oxide (component (d)). And a metal element M in the formula (3) of the metal oxide represented by the formula (3).
Must be different.

Q representing the metal element in the metal oxide represented by the general formula (3) is IVa, Va, VIa, or IVa in the periodic table.
It is a metal belonging to the group selected from VIIa, VIII, Ib and IIb. For example, iron, cobalt, nickel, palladium, copper, zinc, cadmium and the like can be mentioned, and they are selected alone or in combination of two or more.

As specific representative examples, MgO, Ca
O, NiO_b(0.5 ≦ b ≦ 2), CoO_b(1 ≦ b ≦
2), PbO_b(0.5 ≦ b ≦ 2), SnO_b(1 ≦ b
≦ 2), ZnO, FeO_b(1 ≦ b ≦ 1.5), CuO
_b(0.5 ≦ b ≦ 1), TiO _b(1 ≦ b ≦ 2), Pd
O_b(1 ≦ b ≦ 2) and the like.

General formula treated with the above silicone compound
A metal hydroxide represented by (1) and a metal hydroxide represented by general formula (3)
Suitable combinations with metal oxides include, for example,
For example, MgOH_TwoO, Al_TwoO_Three・ CH_TwoO (0 <c ≦
3) Metal hydroxide and FeO _b(1 ≦ b ≦ 1.5),
Combinations with NiO and ZnO metal oxides
You.

Further, the metal hydroxide represented by the above formula (1) and the metal oxide represented by the above formula (3) are generally granular, and both are average particle diameters measured by a laser type particle size measuring device. Those having a range of 0.1 to 30 μm are preferably used. Particularly preferred is an average particle size of 0.5 to 20 μm.

The inorganic filler (component (e)) used together with the components (a) to (d) is not particularly limited, and includes various known fillers. For example, quartz glass powder, talc, silica powder, alumina powder, calcium carbonate, boron nitride, silicon nitride, carbon black powder and the like can be mentioned. In particular, it is preferable to use silica powder.

The total amount of the inorganic filler obtained by adding the above-mentioned metal hydroxide and metal oxide to the inorganic filler is 6% of the total amount of the resin composition for semiconductor encapsulation.
It is preferable to set the amount to 0 to 92% by weight. Particularly preferably, it is 70 to 90% by weight. That is, if the total amount of the inorganic substances is less than 60% by weight, the flame retardancy tends to decrease.

The content of the metal hydroxide and the metal oxide is 4 to 4 of the entire resin composition for encapsulating a semiconductor.
It is preferable to set it in the range of 40% by weight. Particularly preferably, it is 10 to 30% by weight. That is, when the content of the metal hydroxide and the metal oxide is less than 4% by weight, the flame-retardant effect is poor, and when the content exceeds 40% by weight, the solder resistance and the moisture resistance reliability tend to decrease. . At this time, the metal oxide represented by the general formula (3) used in combination with the metal hydroxide represented by the general formula (1) is 10 to 50 times.
Used in percentages by weight. That is, if the metal oxide is less than 10% by weight with respect to the metal hydroxide, the carbonization promotion by the metal oxide is small, so that it is difficult to obtain a sufficient flame-retardant effect. This is because it becomes difficult to obtain the flame retardant effect because the amount of metal hydroxide is reduced.

In some cases, in place of the metal hydroxide represented by the general formula (1) in the component (c) and the metal oxide represented by the general formula (3) in the component (d), A composite metal hydroxide in a composite form in which the metal hydroxide and the metal oxide are composited can be used. The combination of each component when using the composite metal hydroxide is represented by the thermosetting resin (component (a)), the curing agent (component (b)), the inorganic filler (component (e)), and the general formula (2). The composite metal hydroxide is used together with the silicone compound to be used. As a specific representative example of the composite metal hydroxide, sMgO. (1-s) NiO.cH
₂ O [0 <s <1, 0 <c ≦ 1], sMgO · (1-
s) ZnO · cH ₂ O [0 <s <1, 0 <c ≦ 1], s
Al ₂ O _3. (1-s) Fe ₂ O ₃ .cH ₂ O [0 <s
<1, 0 <c ≦ 3]. Of these, hydrates of magnesium oxide / nickel oxide and hydrates of magnesium oxide / zinc oxide are particularly preferably used. In particular, when the above-mentioned composite metal hydroxide is used, its flame retardant effect can be exhibited in the range of 1 to 30% by weight of the total amount of the resin composition. Also in this case, as in the above, if it is less than 1% by weight, the flame-retardant effect becomes insufficient and
If it exceeds 0% by weight, the solder heat resistance and the moisture resistance reliability tend to decrease.

As the resin composition for semiconductor encapsulation using the metal hydroxide represented by the general formula (1), the concentration of chloride ions in the extraction water extracted as follows is as follows. It is preferably 200 μg or less per 1 g of the cured product. That is, 5 g of the thermosetting resin composition
And 50 cc of distilled water in a dedicated extraction container, and leave the container in a dryer at 160 ° C. for 20 hours to extract water (pH
6.0-8.0). Then, the extracted water is subjected to ion chromatography analysis to measure the amount of chloride ion (x).
Since the amount of chloride ions (x) is a value obtained by diluting the amount of ions in the cured resin composition by 10 times, the amount of chloride ions per gram of the cured resin composition is calculated by the following equation. In addition, the pH of the said extraction water has the preferable range of 6.0-8.0.

[0049]

## EQU1 ## Chlorine ion amount (μg) per 1 g of the cured resin composition = x × (50/5)

That is, when the concentration of chloride ions contained in the extraction water of the cured resin composition is higher than 200 μg, there is a tendency that corrosion of a semiconductor element, a lead frame, etc. occurs, and moisture resistance deteriorates. Become like

The resin composition for semiconductor encapsulation of the present invention may optionally contain a curing accelerator, a pigment, a release agent, a flexibility-imparting agent, etc., as required, in addition to the above components (a) to (e). can do.

As the curing accelerator, conventionally known curing accelerators, for example, 1,8-diaza-bicyclo (5,4,0)
Examples include tertiary aminos such as undecene-7 and triethylenediamine, imidazoles such as 2-methylimidazole, and phosphorus-based curing accelerators such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate.

Examples of the pigment include carbon black and titanium oxide. Further, as the release agent,
Polyethylene wax, paraffin and fatty acid esters,
Fatty acid salts and the like.

Further, examples of the above-mentioned flexibility imparting agent include silicone resin and butadiene-acrylonitrile rubber.

Further, in the resin composition for encapsulating a semiconductor of the present invention, it is preferable to use an organic flame retardant in addition to the above components, since the amount of the metal hydroxide used can be reduced. Representative organic flame retardants include compounds having a heterocyclic skeleton.

The compound having the above heterocyclic skeleton includes
For example, compounds having a heterocyclic skeleton such as a melamine derivative, a cyanurate derivative, and an isocyanurate derivative can be given. These may be used alone or in combination of two or more.

The organic flame retardant includes the metal hydroxide,
It may be blended after being mechanically mixed with a metal oxide or a composite metal hydroxide in advance, or an organic flame retardant may be dissolved in a solvent and the metal hydroxide, the metal oxide, or the composite metal hydroxide may be added thereto. A material that has been subjected to a surface treatment by adding an oxide and removing the solvent may be used.

The content of the organic flame retardant is set in the range of 1 to 10% by weight based on the total amount of the metal hydroxide and the metal oxide or the amount of the composite metal hydroxide used. Is preferred. Particularly preferably, 1.0 to 5.
0% by weight.

The resin composition for encapsulating a semiconductor of the present invention can be produced, for example, as follows. First, using the silicone compound represented by the general formula (2), the metal hydroxide represented by the general formula (1) is treated according to the method described above. Next, together with the metal hydroxide (component (c)) treated with the silicone compound, the remaining components, a thermosetting resin (component (a)), a curing agent (component (b)), a metal oxide (component (d)) and an inorganic material A filler (e component) and other additives as necessary are blended in a predetermined ratio. Next, this mixture is melt-kneaded in a heated state using a kneading machine such as a mixing roll machine, and the mixture is cooled to room temperature. Then, the desired resin composition for semiconductor encapsulation can be produced by a series of steps of pulverization by known means and tableting as necessary.

The method for encapsulating a semiconductor element using the resin composition for encapsulating a semiconductor thus obtained is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding. .

Next, examples will be described together with comparative examples.

First, prior to the examples, metal hydroxides, metal oxides and composite metal hydroxides shown in Table 1 below were prepared.

[0063]

[Table 1]

On the other hand, silicone compounds shown in Table 2 below were prepared.

[0065]

[Table 2]

[0066]

Examples 1 to 16 and Comparative Examples 1 to 4
In the combinations and amounts shown in Table 5, the metal hydroxide, the metal oxide and the composite metal hydroxide, and the silicone compound were stirred and mixed in a solvent (ethyl alcohol), and then the alcohol was removed. Produced. Then, this and the remaining components shown in Tables 3 to 5 below were blended in the proportions shown in the same table, and mixed on a mixing roll machine (temperature: 10).
(0 ° C.) for 3 minutes, cooled and solidified, and then pulverized to obtain a desired powdery thermosetting resin composition.

[0067]

[Table 3]

[0068]

[Table 4]

[0069]

[Table 5]

Using the thermosetting resin compositions obtained in Examples and Comparative Examples, a semiconductor element was subjected to transfer molding (conditions: 175 ° C. × 2 minutes), and 175 ° C. ×
After curing for 5 hours, a semiconductor device was obtained. This semiconductor device has an 80-pin QFP (quad flat package, size: 20 × 14 × 2 mm) and a die pad size of 8 × 8 mm.

The semiconductor device thus obtained is left in a high-temperature bath of 130 ° C./85% relative humidity with a bias voltage of 3.0 V applied, and the time until the failure rate becomes 50% is measured. A PCB test was performed. Furthermore, a test piece having a thickness of 1/16 inch was molded using each thermosetting resin composition, and the flame retardancy was evaluated according to the method of UL94 V-0 standard. The results are shown in Tables 6 to 9 below.

Further, the chloride ion concentration of the cured products of the thermosetting resin compositions obtained in the above Examples and Comparative Examples was measured. The method for measuring the chloride ion concentration followed the method described above. The results are shown in Tables 6 to 9 below. The pH value of the extract of each cured product was also measured.

[0073]

[Table 6]

[0074]

[Table 7]

[0075]

[Table 8]

[0076]

[Table 9]

As is clear from Tables 6 to 9, Examples 1 to 4 were obtained by adding a silicone compound G to a metal hydroxide A in an amount of 3 to 17% by weight, The chlorine ion concentration decreased as the addition amount of the silicone compound increased. Good results were obtained not only in the flame retardancy level but also in the humidity resistance reliability.

In Examples 5 and 6, silicone compound G was added to composite metal hydroxides E and F at a ratio of 9% by weight and treated, and both flame retardancy level and humidity resistance reliability were improved. Good results were obtained.

In Examples 7 and 8, the metal hydroxide A
Alternatively, silicone compound H was added to composite metal hydroxide E at a ratio of 9% by weight and treated, and good results were obtained in both flame retardancy level and humidity resistance reliability.

Further, in Examples 9 to 12, the silicone compound G was added to the metal hydroxide A or the composite metal hydroxide E at a ratio of 9% by weight and treated. Nos. 16 to 16 were obtained by adding the silicone compound G to the metal hydroxide B in the range of 3 to 17% by weight, and all of them showed good results in both the flame retardancy level and the humidity resistance reliability. .

On the other hand, in the comparative example, metal hydroxide,
The composite metal hydroxide was used in an untreated state without adding a silicone compound, and there was no problem with the flame retardancy level. The result of the evaluation test was significantly worse than that of the example.

[0082]

As described above, the present invention provides a special metal hydroxide obtained by treating the metal oxide represented by the general formula (1) with the silicone compound represented by the general formula (2). A semiconductor element is encapsulated using a semiconductor encapsulation resin composition containing (C) and a specific metal oxide (D). As described above, since the above-described special metal hydroxide and the specific metal oxide are used in combination, even under high temperature and high humidity, there is no influence of bromine as compared with a brominated epoxy resin which is a conventional flame retardant, so that a semiconductor element or Corrosion of the aluminum wiring does not occur, and the moisture resistance reliability is improved and the life is extended. Furthermore, since flame retardancy can be imparted without using harmful halides or antimony trioxide, the safety is very high and the environment is pollution-free.

The above-mentioned general formula (1)
In place of the metal hydroxide represented by the general formula (3) and the metal oxide represented by the general formula (3) in the above two components, a composite form in which the metal hydroxide and the metal oxide are composited Even if a metal hydroxide is used, excellent flame retardancy and moisture resistance reliability are imparted, as well as high safety.

As described above, the semiconductor device of the present invention provides a non-polluting flame-retarding technology and a technology for significantly improving the reliability of the semiconductor device, and has a very high industrial utility value. It is.

Continuation of the front page (51) Int.Cl. ⁶ Identification symbol FI H01L 23/29 H01L 23/30 R 23/31 (72) Inventor Mitsuru Shimizu 1-2-1, Shimohozumi, Ibaraki-shi, Osaka Nitto Denko Corporation Inside

Claims (11)

[Claims] 1. A resin composition for encapsulating a semiconductor comprising the following components (a) to (e): (A) thermosetting resin. (B) Curing agent. (C) a metal hydroxide represented by the following general formula (1):
A treated metal hydroxide which is treated with a silicone compound represented by the following general formula (2). Embedded image m (M _a O _b ) · cH ₂ O (1) [In the above formula (1), M is a metal element;
b and c are positive numbers, and m is a positive number of 1 or more. [Chemical formula 2] (D) A metal oxide represented by the following general formula (3). Embedded image m ′ (Q _d O _e ) (3) [In the above formula (3), Q represents IVa, V in the periodic table.
a, VIa, VIIa, VIII, Ib, IIb are metal elements belonging to the group selected from the group consisting of metal elements different from M in the above formula (1). D and e are positive numbers, and m 'is a positive number of 1 or more. (E) Inorganic filler. 2. A metal element in the metal hydroxide represented by the general formula (1), wherein M represents aluminum, magnesium, calcium, nickel, cobalt, tin, zinc,
The resin composition for semiconductor encapsulation according to claim 1, which is copper, iron, titanium or boron. 3. The semiconductor according to claim 1, wherein Q representing a metal element in the metal oxide represented by the general formula (3) is iron, cobalt, nickel, palladium, copper, zinc or cadmium. A sealing resin composition. 4. A composite metal hydroxide formed by compounding the metal hydroxide represented by the general formula (1) and the metal oxide represented by the general formula (3). The resin composition for semiconductor encapsulation according to any one of claims 1 to 3. 5. The method according to claim 1, wherein the composite metal hydroxide is sMgO.
(1-s) NiO · cH ₂ O [0 <s <1, 0 <c ≦
The resin composition for semiconductor encapsulation according to claim 4, which is [1]. 6. The method according to claim 1, wherein the composite metal hydroxide is sMgO.
(1-s) ZnO · cH ₂ O [0 <s <1, 0 <c ≦
The resin composition for semiconductor encapsulation according to claim 4, which is [1]. 7. The total content of the metal hydroxide represented by the general formula (1) and the metal oxide represented by the general formula (3) is 4 to 40% by weight of the whole resin composition. The resin composition for semiconductor encapsulation according to any one of claims 1 to 3, which is set in a range. 8. The semiconductor encapsulation according to claim 4, wherein the content of the composite metal hydroxide is set in a range of 1 to 30% by weight of the whole resin composition. Resin composition. 9. The extract of the cured resin composition has a pH of 6.0.
The resin composition for semiconductor encapsulation according to any one of claims 1 to 8, wherein the chloride ion concentration is in a range of from about to 8.0 and the chloride ion concentration is 200 µg or less per 1 g of the cured resin composition. 10. A cured product of the resin composition for semiconductor encapsulation according to any one of claims 1 to 9, which has a flame retardancy equivalent to V-0 in a UL94 combustion test with a 1/16 inch thickness. The resin composition for semiconductor encapsulation according to any one of claims 1 to 9, which shows: 11. A semiconductor device in which a semiconductor element is encapsulated with the resin composition for encapsulating a semiconductor according to claim 1.