JPH10242372A - Lead frame material and production thereof - Google Patents
Lead frame material and production thereofInfo
- Publication number
- JPH10242372A JPH10242372A JP4519997A JP4519997A JPH10242372A JP H10242372 A JPH10242372 A JP H10242372A JP 4519997 A JP4519997 A JP 4519997A JP 4519997 A JP4519997 A JP 4519997A JP H10242372 A JPH10242372 A JP H10242372A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- nickel
- lead frame
- foil
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置等のリ
ードフレームの作製に好適なリードフレーム材に関す
る。The present invention relates to a lead frame material suitable for manufacturing a lead frame of a semiconductor device or the like.
【０００２】[0002]
【従来の技術】ＩＣ，ＬＳＩの高集積化に伴ないピン数
が増加し、そのためリード部の微細化がますます必要と
されている。こうしたリードフレームは、リードフレー
ム材をエッチングして作製する方法がリード部の微細化
に適している。2. Description of the Related Art The number of pins has increased with the increase in the degree of integration of ICs and LSIs. Therefore, finer lead portions have been increasingly required. For such a lead frame, a method of manufacturing by etching a lead frame material is suitable for miniaturization of a lead portion.
【０００３】特開平３−１４８８５６号公報には、アル
ミニウムからなるエッチングストップ層を厚さの異なる
２層の金属層でサンドイッチ状に挟んだ３層構造のリー
ドフレーム材を用い、これをエッチングによりリードフ
レームを作製する方法が記載されている。Japanese Patent Application Laid-Open No. 3-148856 discloses a lead frame material having a three-layer structure in which an etching stop layer made of aluminum is sandwiched between two metal layers having different thicknesses. A method for making a frame is described.
【０００４】この方法によれば、アルミニウムからなる
エッチングストップ層を設けたことにより、厚さの異な
る２層の金属層をそれぞれ選択的にエッチングすること
ができる。特に、リードフレームの母材となる厚い金属
層側を必要な機械的強度が得られる厚さとし、ＩＣ等と
直接接続される側の薄い金属層を接続に要求される微細
さに応じた厚さとすることにより、ＩＣとの微細な接続
部を有し、かつ、十分な機械的強度を有するリードフレ
ームが作製できる。According to this method, since the etching stop layer made of aluminum is provided, two metal layers having different thicknesses can be selectively etched. In particular, the thick metal layer which is the base material of the lead frame has a thickness which can provide the required mechanical strength, and the thin metal layer which is directly connected to an IC or the like has a thickness corresponding to the fineness required for connection. By doing so, it is possible to manufacture a lead frame having a fine connection portion with the IC and having sufficient mechanical strength.
【０００５】しかし、上記の３層構造のリードフレーム
材では、一般に、中間層のエッチングストップ層が蒸着
によって形成されたアルミニウムからなる。こうした蒸
着によるアルミニウム層の形成は、工程が煩雑で、リー
ドフレーム材のコスト高につながると云った問題があ
る。[0005] However, in the above three-layered lead frame material, the intermediate etching stop layer is generally made of aluminum formed by vapor deposition. The formation of the aluminum layer by such vapor deposition has a problem that the process is complicated and leads to an increase in the cost of the lead frame material.
【０００６】また、この３層構造のリードフレーム材を
用いてリードフレームを作製する方法では、ＩＣ等と接
続される側のリード形成面上に、絶縁保護膜であるポリ
イミドフィルムを、ポリアミド酸系接着剤を用いて３５
０℃以上の温度で接着，硬化させる際に、リードフレー
ム材が高温にさらされる工程が必要となる。従って、中
間層のエッチングストップ層としては、こうした高温で
の耐熱性が要求される。In a method of manufacturing a lead frame using a lead frame material having a three-layer structure, a polyimide film as an insulating protective film is formed on a lead forming surface on a side to be connected to an IC or the like by using a polyamic acid-based material. 35 with adhesive
When bonding and curing at a temperature of 0 ° C. or higher, a step of exposing the lead frame material to a high temperature is required. Therefore, the intermediate layer is required to have heat resistance at such a high temperature as an etching stop layer.
【０００７】また、電気めっき等により容易に形成し得
るニッケル等のエッチングストップ層は、３５０℃以上
の高温にさらされると、ＩＣと接続される側の薄い金属
銅層の銅がニッケル層中に拡散するために、エッチング
ストップ層としての役割を果たすことができない。When an etching stop layer made of nickel or the like, which can be easily formed by electroplating or the like, is exposed to a high temperature of 350 ° C. or more, the copper of the thin metal copper layer on the side connected to the IC becomes in the nickel layer. Due to diffusion, they cannot serve as an etching stop layer.
【０００８】[0008]
【発明が解決しようとする課題】本発明の目的は、蒸着
等の煩雑な工程を必要とせず、めっきによりエッチング
ストップ層を設けた耐熱性に優れた２層構造のリードフ
レーム材とその製法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a heat-resistant two-layered lead frame material provided with an etching stop layer by plating, which does not require complicated steps such as vapor deposition, and a method for producing the same. To provide.
【０００９】[0009]
【課題を解決するための手段】本発明者らは、前記課題
を解決するため検討を重ねた結果、リードフレーム材の
エッチングストップ層として、特定の合金層を、特定の
厚みに形成することにより、蒸着などの煩雑な工程を必
要とせず、めっきにより形成することで、優れた耐熱性
を有する２層構造のリードフレーム材が容易に得られる
ことを見出し、本発明に到達した。Means for Solving the Problems As a result of repeated studies to solve the above problems, the present inventors have found that a specific alloy layer having a specific thickness is formed as an etching stop layer of a lead frame material. The present inventors have found that a lead frame material having a two-layer structure having excellent heat resistance can be easily obtained by forming by plating without requiring a complicated process such as vapor deposition and the like, and arrived at the present invention.
【００１０】即ち、本発明の要旨は、厚さ３５〜３００
μｍの銅箔または銅合金箔の一方の面に、厚さ０.０４
〜７０μｍのニッケル−リン合金層がめっきにより設け
られていることを特徴とするリードフレーム材にある。That is, the gist of the present invention is that the thickness is 35 to 300.
A thickness of 0.04 on one side of a copper or copper alloy foil
A lead frame material provided with a nickel-phosphorus alloy layer having a thickness of about 70 μm by plating.
【００１１】前記ニッケル−リン合金層中のリンの含有
量が０.３〜１重量％である上記のリードフレーム材に
ある。In the above lead frame material, the content of phosphorus in the nickel-phosphorus alloy layer is 0.3 to 1% by weight.
【００１２】前記銅合金箔は、銅と、Ｓｎ，Ｎｉ，Ｚ
ｎ，Ｐ，Ｆｅ，Ｚｒ，Ｃｒ，ＭｇまたはＳｉから選ばれ
る少なくとも１種との合金である上記のリードフレーム
材にある。The copper alloy foil is made of copper, Sn, Ni, Z
The lead frame material is an alloy with at least one selected from n, P, Fe, Zr, Cr, Mg and Si.
【００１３】また、前記銅箔または銅合金箔の表面粗さ
Ｒａが０.１〜２μｍである上記のリードフレーム材に
ある。[0013] In the above lead frame material, the copper foil or the copper alloy foil has a surface roughness Ra of 0.1 to 2 µm.
【００１４】さらにまた、厚さ３５〜３００μｍの銅箔
または銅合金箔の一方の面に、厚さ０.０４〜７０μｍ
のニッケル−リン合金層を電気めっき法により形成する
ことを特徴とするリードフレーム材の製法にある。Further, a copper foil or a copper alloy foil having a thickness of 35 to 300 μm is coated on one side with a thickness of 0.04 to 70 μm.
Forming a nickel-phosphorus alloy layer by an electroplating method.
【００１５】[0015]
【発明の実施の形態】本発明のリードフレーム材におい
て、厚さ３５〜３００μｍの銅箔または銅合金箔は、電
解法または圧延法で得られるものであり、これに制限さ
れるものではないが、リードフレームのアウターリード
等を形成するための部材となるものでる。BEST MODE FOR CARRYING OUT THE INVENTION In the lead frame material of the present invention, a copper foil or a copper alloy foil having a thickness of 35 to 300 μm is obtained by an electrolytic method or a rolling method, but is not limited thereto. , A member for forming outer leads and the like of the lead frame.
【００１６】その厚さは、３５μｍ未満ではアウターリ
ードとしての機械的強度が保持できなくなり、３００μ
ｍを超えると長時間のエッチングが必要となり、生産性
が悪くなる。該箔の特に好ましい厚さは５０〜２００μ
ｍである。If the thickness is less than 35 μm, the mechanical strength of the outer lead cannot be maintained, and
If it exceeds m, etching for a long time is required, and productivity is deteriorated. A particularly preferred thickness of the foil is 50-200μ.
m.
【００１７】上記の銅合金箔としては、例えば、銅と、
Ｓｎ，Ｎｉ，Ｚｎ，Ｐ，Ｆｅ，Ｚｒ，Ｃｒ，Ｍｇまたは
Ｓｉから選ばれる少なくとも１種との合金であって、銅
合金中の上記金属の含有量が０.０１〜５重量％のもの
が好適である。The above-mentioned copper alloy foil includes, for example, copper and
An alloy with at least one selected from the group consisting of Sn, Ni, Zn, P, Fe, Zr, Cr, Mg, and Si, wherein the content of the metal in the copper alloy is 0.01 to 5% by weight. It is suitable.
【００１８】また、銅箔または銅合金箔は、その表面粗
さＲａが０.１〜２μｍが好ましく、特に、０.２〜０.
８μｍが好適である。０.１μｍ未満の場合にはニッケ
ル−リン合金層の密着性が悪化することがあり、２μｍ
を超える場合にはニッケル−リン合金層にピンホールが
発生することがあり不都合である。The copper foil or the copper alloy foil preferably has a surface roughness Ra of 0.1 to 2 μm, more preferably 0.2 to 0.2 μm.
8 μm is preferred. If it is less than 0.1 μm, the adhesion of the nickel-phosphorus alloy layer may be deteriorated,
In the case where the ratio exceeds 2, a pinhole may be generated in the nickel-phosphorus alloy layer, which is disadvantageous.
【００１９】前記のニッケル−リン合金層（厚さ０.０
４〜７０μｍ）は、上記の銅箔または銅合金箔をエッチ
ングする通常のエッチング液ではエッチングされること
はない。The nickel-phosphorus alloy layer (having a thickness of 0.0
(4 to 70 μm) will not be etched by the usual etching solution for etching the above copper foil or copper alloy foil.
【００２０】上記ニッケル−リン合金層はめっき、例え
ば、電気めっきにより容易に形成できる。従って、従来
の蒸着により形成していたアルミニウム層に比べて、煩
雑な工程がなく、容易に形成することができる。The nickel-phosphorus alloy layer can be easily formed by plating, for example, electroplating. Therefore, as compared with the aluminum layer formed by the conventional vapor deposition, it can be easily formed without complicated steps.
【００２１】また、ニッケル−リン合金は、リンを含有
するために、高温にさらされても隣接する銅箔または銅
合金箔中の銅がニッケル−リン合金層に拡散することが
なく、耐熱性に優れている。Further, since the nickel-phosphorus alloy contains phosphorus, even if it is exposed to a high temperature, copper in the adjacent copper foil or copper alloy foil does not diffuse into the nickel-phosphorus alloy layer, and the heat resistance is high. Is excellent.
【００２２】ニッケル−リン合金層中のリンの含有量
は、好ましくは０.３〜１重量％、更に好ましくは０.５
〜０.８重量％である。リンの含有量が０.３重量％未満
では耐熱性が低下し、銅のニッケル層への拡散が起こ
り、エッチングストップ層としての役割を果たせなくな
る。また、１重量％を超えるとニッケル−リン電析効率
が低下し、電気めっきによる生産性が低下する。The content of phosphorus in the nickel-phosphorus alloy layer is preferably 0.3 to 1% by weight, more preferably 0.5% by weight.
~ 0.8% by weight. If the phosphorus content is less than 0.3% by weight, heat resistance is reduced, copper diffuses into the nickel layer, and cannot serve as an etching stop layer. On the other hand, if it exceeds 1% by weight, nickel-phosphorus electrodeposition efficiency decreases, and productivity by electroplating decreases.
【００２３】ニッケル−リン合金層の厚さが０.０４μ
ｍ未満では、その上に半導体チップ等を搭載するにあた
り、インナーリード等を形成する際のエッチングストッ
プ層としての機能が十分に確保できない。また、７０μ
ｍを超えると、エッチング等が必要な場合に長時間を要
し、リードフレーム作製時の生産性が低下する。なお、
その厚さは１.６〜１０μｍが好ましく、更に２〜５μ
ｍが好ましい。The thickness of the nickel-phosphorus alloy layer is 0.04 μm
If it is less than m, a function as an etching stop layer when forming an inner lead or the like cannot be sufficiently secured when a semiconductor chip or the like is mounted thereon. Also, 70μ
If it exceeds m, it takes a long time when etching or the like is required, and the productivity in manufacturing the lead frame is reduced. In addition,
The thickness is preferably 1.6 to 10 μm, and more preferably 2 to 5 μm.
m is preferred.
【００２４】また、ニッケル−リン合金層の表面粗さＲ
ａは、下地の銅箔または銅合金箔の表面粗さにある程度
影響を受けるが、０.１〜０.８μｍが望ましい。The surface roughness R of the nickel-phosphorus alloy layer
Although a is affected to some extent by the surface roughness of the underlying copper foil or copper alloy foil, it is preferably 0.1 to 0.8 μm.
【００２５】また、防錆を確保する上からは、リードフ
レーム材の表面にクロメート処理や亜鉛化合物を含むク
ロメート処理を施すことが好ましい。From the viewpoint of ensuring rust prevention, it is preferable to subject the surface of the lead frame material to a chromate treatment or a chromate treatment containing a zinc compound.
【００２６】本発明のリードフレーム材は、厚さ３５〜
３００μｍの銅箔または銅合金箔の表面にめっきにより
厚さ０.０４〜７０μｍのニッケル−リン合金層を形成
したものであるが、このニッケル−リン合金層上にめっ
きレジストのパターンを形成して、ＩＣとの微細な銅接
続部をめっき形成することができる。また、必要に応じ
て銅層の表面にクロメート層を形成することができる。The lead frame material of the present invention has a thickness of 35 to
A nickel-phosphorus alloy layer having a thickness of 0.04 to 70 μm is formed by plating on the surface of a copper foil or a copper alloy foil having a thickness of 300 μm. A pattern of a plating resist is formed on the nickel-phosphorus alloy layer. A fine copper connection portion with an IC can be formed by plating. Further, a chromate layer can be formed on the surface of the copper layer as needed.
【００２７】次に、本発明のニッケル−リン合金層を形
成するに好ましいめっき液組成およびめっき条件を示
す。Next, preferred plating solution compositions and plating conditions for forming the nickel-phosphorus alloy layer of the present invention will be described.
【００２８】 （１）めっき液組成 硫酸ニッケル ２００〜３００ｇ／ｌ ホウ酸 １０〜１００ｇ／ｌ 亜リン酸 ０.２〜２０ｇ／ｌ ｏ−スルホ安息香酸イミドナトリウム １〜５０ｇ／ｌ 硫酸マグネシウム １０〜２００ｇ／ｌ （２）めっき条件 ｐＨ：１.６〜３.０、電流密度：１〜１０Ａ／ｄｍ2、
液温：２０〜７０℃。(1) Composition of plating solution Nickel sulfate 200-300 g / l Boric acid 10-100 g / l Phosphorous acid 0.2-20 g / l o-Sulfobenzoic acid sodium imide 1-50 g / l Magnesium sulfate 10-200 g / L (2) Plating conditions pH: 1.6 to 3.0, current density: 1 to 10 A / dm 2 ,
Liquid temperature: 20-70 ° C.
【００２９】本発明のリードフレーム材が適用できる好
ましい半導体装置としてはＴＢＧＡ（Ｔape Ｂall Ｇri
d Ａrray），ＣＳＰ（Ｃhip Ｓize Ｐackage）等が挙げ
られる。A preferred semiconductor device to which the lead frame material of the present invention can be applied is TBGA (Tape Ball Gri).
d Array), CSP (Chip Size Package) and the like.
【００３０】[0030]
【実施例】本発明を実施例に基づき更に具体的に説明す
る。EXAMPLES The present invention will be described more specifically based on examples.
【００３１】〔実施例 １〕厚さ１５０μｍの銅合金箔
〔銅−ニッケル−錫系合金、三菱伸銅（株）製のＴＡＭ
ＡＣ１５，表面粗さＲａ：０.２μｍ〕を用意し、該銅
合金箔の一方のめっき面を施さない面側を、プラスチッ
ク製のめっき析出防止板でカバーした。Example 1 Copper alloy foil [copper-nickel-tin alloy, 150 μm thick, TAM manufactured by Mitsubishi Shindoh Co., Ltd.]
AC15, surface roughness Ra: 0.2 μm] was prepared, and one side of the copper alloy foil on which no plating surface was applied was covered with a plating prevention plate made of plastic.
【００３２】これを用いて下記の製造工程（工程１〜
５）を順次行い、銅合金箔の上にニッケル−リン合金層
（厚さ：２μｍ、リン含有量：０.８重量％、表面粗さ
Ｒａ：０.２μｍ）を形成し、２層構造のリードフレー
ム材を作製した。なお、工程１〜４の各工程終了後は水
洗した。Using this, the following manufacturing steps (Steps 1 to 5)
5) is sequentially performed to form a nickel-phosphorus alloy layer (thickness: 2 μm, phosphorus content: 0.8% by weight, surface roughness Ra: 0.2 μm) on the copper alloy foil to form a two-layer structure. A lead frame material was manufactured. After the completion of each of the steps 1 to 4, washing was performed with water.
【００３３】工程１：脱脂工程 脱脂液 ｏ−ケイ酸ナトリウム ３０ｇ／ｌ 炭酸ナトリウム ２０ｇ／ｌ 水酸化ナトリウム ２０ｇ／ｌ 電解脱脂条件 電流密度：５Ａ／ｄｍ2、処理時間：３０秒、液温：４
０℃ 陰極：銅合金箔、陽極：酸化イリジウム。Step 1: Degreasing step Degreasing solution o-sodium silicate 30 g / l sodium carbonate 20 g / l sodium hydroxide 20 g / l electrolytic degreasing conditions Current density: 5 A / dm 2 , treatment time: 30 seconds, liquid temperature: 4
0 ° C. Cathode: copper alloy foil, anode: iridium oxide.
【００３４】工程２：酸洗処理 洗浄液 硫酸：２５ｇ／ｌ 洗浄条件 処理時間：３０秒、液温：２０℃。Step 2: Pickling treatment Cleaning solution Sulfuric acid: 25 g / l Cleaning conditions Treatment time: 30 seconds, liquid temperature: 20 ° C.
【００３５】工程３：ニッケル−リン合金めっき層の形
成 めっき液 硫酸ニッケル ３００ｇ／ｌ ホウ酸 ４０ｇ／ｌ 亜リン酸 ４ｇ／ｌ ｏ−スルホ安息香酸イミドナトリウム １０ｇ／ｌ 硫酸マグネシウム ８０ｇ／ｌ めっき条件 陽極：酸化イリジウム、ｐＨ：２.５、電流密度：１.１
Ａ／ｄｍ2、時間：１０分、液温：３５℃。Step 3: Formation of nickel-phosphorus alloy plating layer Plating solution Nickel sulfate 300 g / l Boric acid 40 g / l Phosphorous acid 4 g / l O-sulfobenzoimide sodium 10 g / l Magnesium sulfate 80 g / l Plating conditions anode : Iridium oxide, pH: 2.5, current density: 1.1
A / dm 2 , time: 10 minutes, liquid temperature: 35 ° C.
【００３６】工程４：防錆層の形成 処理液 重クロム酸ナトリウム ３.５ｇ／ｌ 処理条件 浸漬処理時間：２５秒、液温：２０℃、ｐＨ：４.７。Step 4: Formation of antirust layer Treatment solution 3.5 g / l of sodium dichromate Treatment conditions Immersion treatment time: 25 seconds, solution temperature: 20 ° C., pH: 4.7.
【００３７】工程５：乾燥 温度：１００℃、時間：５分。Step 5: Drying temperature: 100 ° C., time: 5 minutes.
【００３８】上記の工程１〜５により作製した２層構造
のリードフレーム材を用いて、窒素ガス雰囲気中で加熱
（２００℃，３００℃，４００℃，５００℃）処理を３
０分間施し、高温熱拡散試験によりリードフレーム材の
耐熱性を評価した。The heating (200 ° C., 300 ° C., 400 ° C., 500 ° C.) heat treatment in the nitrogen gas atmosphere is performed using the two-layered lead frame material prepared in the above steps 1 to 5.
The test was performed for 0 minutes, and the heat resistance of the lead frame material was evaluated by a high-temperature heat diffusion test.
【００３９】上記の高温熱拡散試験は、それぞれ所定の
温度で加熱処理した試験片をＳＥＭ（走査型電子顕微
鏡）およびオージェ電子分光分析装置を用い、リードフ
レームの断面（ニッケル−リン合金層と銅層の接合部）
の加熱温度による金属相互の熱拡散合金化の度合いを分
析し、熱拡散率（％）として求めた。その結果を表１に
示す。In the above-described high-temperature thermal diffusion test, the test pieces, each of which has been heat-treated at a predetermined temperature, are cross-sectioned using a SEM (scanning electron microscope) and an Auger electron spectroscopic analyzer. Layer joint)
The degree of heat diffusion alloying between metals depending on the heating temperature was analyzed and determined as the thermal diffusivity (%). Table 1 shows the results.
【００４０】表１の熱拡散率が小さいほど金属相互の合
金化が進行していないことを示し、リードフレーム材は
耐熱性に優れ、選択エッチング性に優れたものとなる。As shown in Table 1, the smaller the thermal diffusivity, the less metal alloying has progressed, indicating that the lead frame material has excellent heat resistance and excellent selective etching properties.
【００４１】〔比較例 １〕実施例１と同様の銅合金箔
を用い、前記工程３を下記の工程３’に変更し、ニッケ
ル−リン合金層をニッケル層（厚さ２μｍ、表面粗さＲ
ａ：０.２μｍ）と変えた外は実施例１と同様にして、
リードフレーム材を作製した。Comparative Example 1 Using the same copper alloy foil as in Example 1, the above-mentioned step 3 was changed to the following step 3 ′, and the nickel-phosphorus alloy layer was changed to a nickel layer (thickness 2 μm, surface roughness R).
a: 0.2 μm) in the same manner as in Example 1 except that
A lead frame material was manufactured.
【００４２】工程３’：ニッケルめっき層の形成 めっき液 硫酸ニッケル ２８０ｇ／ｌ ホウ酸 ４０ｇ／ｌ ｏ−スルホ安息香酸イミドナトリウム ５ｇ／ｌ めっき条件 陽極：酸化イリジウム、ｐＨ：２.５、電流密度：１.０
Ａ／ｄｍ2、時間：１０分、液温：３５℃。Step 3 ': Formation of nickel plating layer Plating solution Nickel sulfate 280 g / l Boric acid 40 g / l Sodium sulfobenzoimide 5 g / l Plating conditions Anode: iridium oxide, pH: 2.5, current density: 1.0
A / dm 2 , time: 10 minutes, liquid temperature: 35 ° C.
【００４３】実施例１と同様に行った熱拡散試験の結果
を表１に併せて示した。The results of the thermal diffusion test performed in the same manner as in Example 1 are also shown in Table 1.
【００４４】[0044]
【表１】 [Table 1]
【００４５】表１から明らかなように、実施例１のリー
ドフレーム材は、耐熱性に優れていることが分かる。As is clear from Table 1, the lead frame material of Example 1 is excellent in heat resistance.
【００４６】なお、前記ニッケル−リン合金層の形成に
は化学めっき法でも形成できることは述べるまでもな
い。しかし、形成するニッケル−リン合金層の膜厚等の
制御には電気めっき法が好適である。It goes without saying that the nickel-phosphorus alloy layer can be formed also by a chemical plating method. However, an electroplating method is suitable for controlling the thickness of the nickel-phosphorus alloy layer to be formed.
【００４７】また、本実施例においては、工程４におい
て防錆層（クロメート処理）を形成したが、目的によっ
てはこの処理を省いてもよい。In this embodiment, the rust-proof layer (chromate treatment) is formed in step 4, but this treatment may be omitted depending on the purpose.
【００４８】[0048]
【発明の効果】本発明のリードフレーム材は、銅箔また
は銅合金箔とニッケル−リン合金層からなる２層構造を
有しているため、微細なリード部の形成に適し、かつ、
耐熱性に優れている。Since the lead frame material of the present invention has a two-layer structure composed of a copper foil or a copper alloy foil and a nickel-phosphorus alloy layer, it is suitable for forming fine lead portions, and
Excellent heat resistance.
【００４９】また、ニッケル−リン合金層は蒸着などの
煩雑な工程を必要とせず、めっきにより容易に形成でき
ることから、生産性にも優れている。Further, the nickel-phosphorus alloy layer can be easily formed by plating without requiring complicated steps such as vapor deposition, and therefore, is excellent in productivity.
Claims (5)
金箔の一方の面に、厚さ０.０４〜７０μｍのニッケル
−リン合金層がめっきにより設けられていることを特徴
とするリードフレーム材。1. A lead frame, wherein a nickel-phosphorus alloy layer having a thickness of 0.04 to 70 μm is provided on one surface of a copper foil or a copper alloy foil having a thickness of 35 to 300 μm by plating. Wood.
有量が０.３〜１重量％である請求項１に記載のリード
フレーム材。2. The lead frame material according to claim 1, wherein the content of phosphorus in the nickel-phosphorus alloy layer is 0.3 to 1% by weight.
ｎ，Ｐ，Ｆｅ，Ｚｒ，Ｃｒ，ＭｇまたはＳｉから選ばれ
る少なくとも１種との合金である請求項１に記載のリー
ドフレーム材。3. The copper alloy foil comprises copper, Sn, Ni, Z
The lead frame material according to claim 1, which is an alloy with at least one selected from n, P, Fe, Zr, Cr, Mg, and Si.
が０.１〜２μｍである請求項１に記載のリードフレー
ム材。4. A surface roughness Ra of said copper foil or copper alloy foil.
2. The lead frame material according to claim 1, wherein the thickness is 0.1 to 2 μm.
金箔の一方の面に、厚さ０.０４〜７０μｍのニッケル
−リン合金層を電気めっき法により形成することを特徴
とするリードフレーム材の製法。5. A lead frame, wherein a nickel-phosphorus alloy layer having a thickness of 0.04 to 70 μm is formed on one surface of a copper foil or a copper alloy foil having a thickness of 35 to 300 μm by electroplating. The method of material production.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9045199A JP3026485B2 (en) | 1997-02-28 | 1997-02-28 | Lead frame material and its manufacturing method |
| KR1019997003963A KR100322975B1 (en) | 1997-02-03 | 1998-01-21 | Lead frame material |
| US09/341,950 US6117566A (en) | 1997-02-03 | 1998-01-21 | Lead frame material |
| PCT/JP1998/000210 WO1998034278A1 (en) | 1997-02-03 | 1998-01-21 | Lead frame material |
| TW087101182A TW391042B (en) | 1997-02-03 | 1998-02-02 | Lead frame material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9045199A JP3026485B2 (en) | 1997-02-28 | 1997-02-28 | Lead frame material and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10242372A true JPH10242372A (en) | 1998-09-11 |
| JP3026485B2 JP3026485B2 (en) | 2000-03-27 |
Family
ID=12712608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9045199A Expired - Fee Related JP3026485B2 (en) | 1997-02-03 | 1997-02-28 | Lead frame material and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3026485B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6867471B2 (en) | 2002-08-29 | 2005-03-15 | Infineon Technologies Ag | Universal package for an electronic component with a semiconductor chip and method for producing the universal package |
| JP4110440B2 (en) * | 1998-09-30 | 2008-07-02 | 東洋鋼鈑株式会社 | Manufacturing method of lead frame clad plate and manufacturing method of lead frame |
| JP2012134563A (en) * | 2012-04-06 | 2012-07-12 | Dainippon Printing Co Ltd | Resin sealed semiconductor device and semiconductor device circuit member |
| JP2017208461A (en) * | 2016-05-19 | 2017-11-24 | Ｓｈプレシジョン株式会社 | Lead frame and manufacturing method of lead frame |
| JP7061247B1 (en) * | 2020-12-28 | 2022-04-28 | 松田産業株式会社 | Nickel electrolytic plating film and plating structure |
-
1997
- 1997-02-28 JP JP9045199A patent/JP3026485B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4110440B2 (en) * | 1998-09-30 | 2008-07-02 | 東洋鋼鈑株式会社 | Manufacturing method of lead frame clad plate and manufacturing method of lead frame |
| US6867471B2 (en) | 2002-08-29 | 2005-03-15 | Infineon Technologies Ag | Universal package for an electronic component with a semiconductor chip and method for producing the universal package |
| JP2012134563A (en) * | 2012-04-06 | 2012-07-12 | Dainippon Printing Co Ltd | Resin sealed semiconductor device and semiconductor device circuit member |
| JP2017208461A (en) * | 2016-05-19 | 2017-11-24 | Ｓｈプレシジョン株式会社 | Lead frame and manufacturing method of lead frame |
| JP7061247B1 (en) * | 2020-12-28 | 2022-04-28 | 松田産業株式会社 | Nickel electrolytic plating film and plating structure |
| JP7096955B1 (en) * | 2020-12-28 | 2022-07-06 | 松田産業株式会社 | A plating structure provided with a Ni electrolytic plating film and a lead frame containing the plating structure. |
| WO2022145290A1 (en) * | 2020-12-28 | 2022-07-07 | 松田産業株式会社 | Plating structure comprising ni electrolytic plating film, and lead frame including said plating structure |
| CN116324002A (en) * | 2020-12-28 | 2023-06-23 | 松田产业株式会社 | Plating structure having Ni plating film and lead frame comprising the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3026485B2 (en) | 2000-03-27 |
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