JPH10239866A - Rinsing solution composition for stripping treatment, and method for treating substrate by using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a rinsing solution composition for stripping treatment and the method for treating the substrate by using it each being capable of well rinsing the minute parts of the substrate and not corroding the thin films of Al, Al-Si, Al-Si-Cu and the like by incorporating a lower alkylene glycol and another water-soluble organic solvent. SOLUTION: This rinsing solution composition is the stripping solution for the substrate, for semiconductor elements and liquid crystal panel elements, which has been treated with the stripping solution composed essentially of a base salt and containing no hydrofluoric acid and no metal ion and the composition contains lower alkylene glycol and another water-soluble organic solvent, and this glycol is represented by Rn(OH)2 in which R is a straight or branched saturated hydro-carbon group and (n) is an integer of 2-6, and it is embodied by ethylene glycol, propylene glycol, trimethylene glycol, 1,2-butylene glycol, 2,3-butylene glycol, and the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rinsing liquid composition for peeling treatment, and more particularly, to a rinsing treatment after peeling off a substrate used for producing a semiconductor element such as IC or LSI or a liquid crystal panel element. A rinsing liquid composition used for
And a method for treating a substrate using the rinse liquid composition.

[0002]

2. Description of the Related Art Conventionally, semiconductor elements such as ICs and LSIs and liquid crystal panel elements have been manufactured by using aluminum formed on a substrate,
A photoresist is uniformly applied on a conductive metal film such as a copper or aluminum alloy or an insulating film such as a SiO ₂ film, and is then exposed or drawn with an electron beam, and then developed to form a resist pattern. The conductive metal film or the insulating film is selectively etched as a mask to form a fine circuit, and then an unnecessary resist layer is removed with a stripping solution to manufacture.

[0003] Stripping solutions for removing the resist include:
Examples include organic sulfonic acid-based stripping solutions containing alkylbenzenesulfonic acid as a main component, organic amine-based stripping solutions containing organic amines such as monoethanolamine as a main component, and hydrofluoric acid-based stripping solutions containing hydrofluoric acid as a main component. Can be The organic sulfonic acid-based stripping solution is poor in workability due to the use of an organic solvent such as a highly toxic phenol compound or chlorobenzene, and in addition to causing environmental problems, it is easy to corrode the conductive metal film of the substrate. Has disadvantages. Further, the organic amine-based stripping solution is less toxic than the organic sulfonic acid-based stripping solution, does not require complicated treatment for waste liquid treatment, and is used for dry-modified, ashing, ion-implanted, and other altered resist films. In addition to good peelability, it is also excellent in preventing corrosion of the substrate containing Al or Cu, but the peelability of the resist film altered to inorganic properties is not sufficient,
Moreover, since the stripping temperature is relatively high at 60 to 130 ° C., there is a danger that the flammable organic compound in the stripping solution volatilizes and ignites, which requires a large amount of disaster prevention facilities and increases costs. Having. Furthermore, a hydrofluoric acid-based stripping solution containing hydrofluoric acid as a main component is excellent in stripping properties of the inorganic deteriorated film, but has a problem in safety to the human body and is difficult to handle. From a certain point, there is a problem that peripheral devices such as a chemical solution supply device connecting the stripping tank and the container containing the stripping solution are easily corroded, and complicated exhaust treatment and waste liquid treatment are required.

[0004]

As a stripping solution for solving the above problems, the present inventors have proposed a stripping solution containing a salt of hydrofluoric acid and a base containing no metal ion as a main component (hereinafter referred to as fluorinated solution). Hydrogen-based stripper) is disclosed in Japanese Patent Application No. Hei 8-1798.
No. 72 has already proposed this. The hydrofluoric acid-based stripping solution can be stripped at a low temperature in a short time, can prevent corrosion of a metal thin film and peripheral devices on a substrate, has low toxicity, and can be easily evacuated and discharged. However, if the cleaning time in the water cleaning step after the stripping process exceeds about 10 minutes, Ti, Al, Al-Si, Al-Si-C
There is a problem that a metal thin film such as u is corroded. In addition, when the water in the water washing step was replaced with an organic solvent such as methanol, ethanol, isopropyl alcohol, and acetone, there was a disadvantage that hydrofluoric acid crystals were deposited on the substrate. Further, ethylene glycol was used in place of this organic solvent, but it was difficult to completely clean a fine portion having a high viscosity, and it was difficult to completely clean the stripping solution.

In view of this situation, the present inventors have conducted intensive studies and as a result, have found that a rinsing solution for rinsing a substrate peeled with a hydrofluoric acid-based releasing solution is made of a lower alkylene glycol and another water-soluble solution. By using a composition containing an organic solvent, corrosion of the metal thin film can be prevented,
The inventors have found that the fine portion of the substrate can be cleaned well, and that the burden on the waste water treatment of the pure water cleaning solution after the rinsing treatment can be reduced, thereby completing the present invention.
That is,

An object of the present invention is to provide a rinsing liquid composition for a peeling treatment which can clean a fine portion on a substrate satisfactorily and does not corrode a metal thin film on the substrate.

Another object of the present invention is to provide a method for treating a substrate using the rinse solution composition for peeling treatment.

[0008]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a rinse for rinsing a substrate which has been treated with a stripping solution containing a salt of hydrofluoric acid and a base not containing metal ions as a main component. A liquid composition, wherein the rinsing liquid composition contains a lower alkylene glycol and another water-soluble organic solvent, and the rinsing liquid composition for stripping treatment, and the rinsing liquid composition for stripping processing The present invention relates to a method for processing a substrate using the method.

The rinsing liquid composition for stripping treatment of the present invention is a rinsing liquid for rinsing a semiconductor element or a substrate for manufacturing a liquid crystal panel element which has been stripped with a hydrofluoric acid-based stripping liquid as described above. A rinse liquid composition containing a lower alkylene glycol and another water-soluble organic solvent. The lower alkylene glycol has the general formula (I)
I)

[0010]

## STR2 ## _{R n (OH) 2 (II} ) ( wherein, R is a saturated hydrocarbon residue of a linear or branched, n represents an integer from 2 to 6.) Represented by The compound is at least one selected from compounds, and specific examples include ethylene glycol, propylene glycol, trimethylene glycol, 1,2-butylene glycol, 2,3-butylene glycol, and the like. One or more of the above compounds can be used in combination. Particularly, from the viewpoint of solubility in water, ethylene glycol, propylene glycol or a mixture thereof can be suitably used.

The above-mentioned other water-soluble organic solvents are water-soluble organic solvents other than lower alkylene glycol,
Monohydric alcohols such as methyl alcohol, ethyl alcohol, and isopropyl alcohol; ketones such as acetone; sulfoxides such as dimethyl sulfoxide; dimethyl sulfone, diethyl sulfone, bis (2-hydroxyethyl) sulfone, and tetramethylene sulfone Sulfones, amides such as N, N-dimethylformamide, N-methylformamide, N, N-dimethylacetamide, N-methylacetamide, N, N-diethylacetamide, N-methyl-2-pyrrolidone, N-ethyl-
2-pyrrolidone, N-propyl-2-pyrrolidone, N-
Lactams such as hydroxymethyl-2-pyrrolidone and N-hydroxyethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, 1,3-diisopropyl- Imidazolidinones such as 2-imidazolidinone, lactones such as γ-butyrolactone and δ-valerolactone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol mono Polyhydric alcohols such as ethyl ether acetate, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, and derivatives thereof. Conductors. Among these, methyl alcohol, ethyl alcohol, isopropyl alcohol, acetone, dimethyl sulfoxide,
N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone and diethylene glycol monobutyl ether are preferred, but methyl alcohol, ethyl alcohol and isopropyl alcohol are particularly preferred. Monohydric alcohols, such as isopropyl alcohol, are preferred because they are inexpensive and do not require complicated processing at the time of rinsing liquid waste.

The rinsing liquid composition for a peeling treatment of the present invention contains 5 to 60% by weight, preferably 20 to 50% by weight, of a lower alkylene glycol and 40 to 50% by weight of a water-soluble organic solvent.
It is contained in an amount of 95% by weight, preferably 50 to 80% by weight. When the amount of the water-soluble organic solvent other than the lower alkylene glycol is less than 40% by weight, the cleaning property of the fine part is inferior. When the amount of the other water-soluble organic solvent exceeds 95% by weight, hydrofluoric acid crystals are formed on the substrate. It is not preferable because precipitation is easy.

The rinsing solution composition for peeling treatment of the present invention may contain an anticorrosive in addition to the above components. Examples of the anticorrosive include an aromatic hydroxy compound, acetylene alcohol, a carboxyl group-containing organic compound and its anhydride, a triazole compound, and a saccharide. Specific examples of the aromatic hydroxy compound include phenol, cresol, xylenol, pyrocatechol, resorcinol, hydroquinone, pyrogallol, 1,2,4-benzenetriol, salicyl alcohol, p-hydroxybenzyl alcohol, o-hydroxybenzyl alcohol, and p-hydroxybenzyl alcohol. -Hydroxyphenethyl alcohol, p-aminophenol, m-aminophenol, diaminophenol, aminoresorcinol, p-hydroxybenzoic acid,
o-Hydroxybenzoic acid, 2,4-dihydroxybenzoic acid, 2,5-dihydroxybenzoic acid, 3,4-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid and the like can be mentioned, among which pyrocatechol is preferred. is there.

As the acetylene alcohol, specifically, 2-butyne-1,4-diol, 3,5-dimethyl-1
-Hexyn-3-ol, 2-methyl-3-butyne-2
-Ol, 3-methyl-1-pentyn-3-ol,
3,6-dimethyl-4-octyne-3,6-diol,
2,4,7,9-tetramethyl-5-decyne-4,7-
Diol, 2,5-dimethyl-3-hexyne-2,5-
Diols and the like can be mentioned. Among them, 2-butyne-
1,4-diol is preferred.

Examples of the carboxyl group-containing organic compound and its anhydride include formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, maleic acid, fumaric acid, benzoic acid and phthalic acid. , 1,2,3
-Benzenetricarboxylic acid, glycolic acid, lactic acid, malic acid, citric acid, acetic anhydride, phthalic anhydride, maleic anhydride, succinic anhydride, salicylic acid and the like. Preferred carboxyl group-containing organic compounds include formic acid, phthalic acid, benzoic acid, phthalic anhydride and salicylic acid, with phthalic acid, phthalic anhydride and salicylic acid being particularly preferred.

Examples of the triazole compound include benzotriazole, o-tolyltriazole, m-tolyltriazole, p-tolyltriazole, carboxybenzotriazole, 1-hydroxybenzotriazole, nitrobenzotriazole, dihydroxypropylbenzotriazole and the like. Among them, benzotriazole is preferred.

Specific examples of the saccharide include D-sorbitol, arabitol, mannitol, sucrose, starch and the like. Among them, D-sorbitol is preferred.

Each of the above anticorrosives can be used alone or in combination of two or more.

The rinsing liquid composition for peeling treatment containing the above anticorrosive is 5 to 40% by weight of lower alkylene glycol,
The range is preferably 10 to 30% by weight, the other water-soluble organic solvent 55 to 90% by weight, preferably 60 to 85% by weight, and the anticorrosive 0.5 to 15% by weight, preferably 1 to 5% by weight. . It is preferable to include the anticorrosive agent in the above range since the corrosion of the metal thin film can be further suppressed.

The hydrofluoric acid-based stripping solution is a stripping solution containing (a) a salt of hydrofluoric acid and a base containing no metal ion as a main component, and the component (a) as a main component. The stripper is not particularly limited as long as it contains the component (a), the water-soluble organic solvent (b) and the water (c), and has a hydrogen ion concentration (pH) in the range of 5 to 8. A neutral resist stripper is preferred. Examples of the base not containing a metal ion include hydroxylamines, primary,
When an aqueous solution such as an organic amine such as a secondary or tertiary aliphatic amine, an alicyclic amine, an aromatic amine, or a heterocyclic amine, aqueous ammonia or a lower alkyl quaternary ammonium base is used, A base containing no metal ion. This is because, as is well known, in the manufacture of a semiconductor element or a liquid crystal element, metal ions have an adverse effect on the element characteristics, so that it is necessary to reduce the metal ions in the stripping liquid as much as possible. Specific examples of the hydroxylamines include hydroxylamine, N,
N-diethylhydroxylamine and the like are specific examples of primary aliphatic amines, and monoethanolamine, ethylenediamine, 2- (2-aminoethylamino) ethanol and the like are specific examples of secondary aliphatic amines. Diethanolamine, dipropylamine, 2-ethylaminoethanol and the like, tertiary aliphatic amines specifically dimethylaminoethanol, ethyldiethanolamine and the like, alicyclic amines specifically cyclohexylamine, Dicyclohexylamine and the like, as aromatic amines, specifically benzylamine, dibenzylamine, N-methylbenzylamine and the like, and as the heterocyclic amine, specifically, pyrrole, pyrrolidine, pyrrolidone,
Examples include pyridine, morpholine, pyrazine, piperidine, N-hydroxyethylpiperidine, oxazole, thiazole and the like. Further, specific examples of the lower alkyl quaternary ammonium base include tetramethylammonium hydroxide and trimethyl (2-hydroxyethyl) ammonium hydroxide (choline). Among them, aqueous ammonia, monoethanolamine, and tetramethylammonium hydroxide are preferred because they are easily available and excellent in safety. The salt of a metal ion-free base and hydrofluoric acid is added to a commercially available 50-60% concentration of hydrofluoric acid by adding a metal ion-free base to a pH of 5-8. Can be manufactured. It goes without saying that commercially available ammonium fluoride can be used as the salt. In order to make the pH of the hydrofluoric acid-based stripping composition substantially neutral at 5 to 8, the component (a) may be adjusted to almost neutral. It is not possible to unambiguously define the amount of addition for neutralization depending on the type of base not included, but for example, in the case of aqueous ammonia, an equal volume concentration of hydrofluoric acid and aqueous ammonia should be mixed in equal volumes. If desired, the component (a) having the desired pH can be prepared. Also,
In the case of monoethanolamine, the component (a) can be prepared in the same manner by mixing 1000 mol of 1 mol / l hydrofluoric acid with 1 mol of monoethanolamine. When the pH value of the component (a) is in the above range, there is no decrease in the releasability of the deteriorated film, corrosion of peripheral devices such as a metal film on the substrate and a chemical solution supply device can be suppressed, and the device can be handled safely. Furthermore, since the content of hydrogen fluoride is small, it is suitable because complicated exhaust treatment and waste liquid treatment due to the generation of hydrogen fluoride are not required.

As the component (b) of the above-mentioned hydrofluoric acid-based stripping solution composition, a water-soluble organic solvent which is substantially the same as the water-soluble organic solvent of the above-mentioned rinsing solution composition for stripping treatment can be used. However, ethylene glycol is also included as the water-soluble organic solvent of the component (b). Among these water-soluble organic solvents, dimethyl sulfoxide, N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2
-Pyrrolidone, 1,3-dimethyl-2-imidazolidinone, ethylene glycol and diethylene glycol monobutyl ether are preferred because of their excellent releasability of the altered resist film. Particularly, dimethyl sulfoxide, ethylene glycol or a mixture thereof is preferred. The mixture is preferably a mixture of ethylene glycol and dimethyl sulfoxide in a weight ratio of 1: 9 to 6: 4.

The component ratio of the above-mentioned hydrofluoric acid based stripping solution is such that component (a) is 0.2 to 10% by weight, preferably 0.1 to 10% by weight.
The range is 5 to 5% by weight, the component (b) is 30 to 90% by weight, preferably 40 to 70% by weight, and the component (c) is 5 to 50% by weight, preferably 20 to 40% by weight. By containing each component in the above range, the releasability of the deteriorated film, the releasability at room temperature, and the effect of preventing corrosion of the substrate are improved. In particular, in the case of a metal-deposited substrate in which the substrate to be peeled is easily corroded, for example, a substrate of Al, Al-Si, Al-Si-Cu, etc., the above range is essential. When the amount of the component (a) is less than the above range, the releasability of the deteriorated film is reduced. When the amount is too large, the substrate is easily corroded.

Further, the hydrofluoric acid-based stripping solution can contain (d) an anticorrosive. As the component (d), the same anticorrosive as the above-mentioned rinse liquid composition for peeling treatment can be used. By containing the component (d), the anticorrosion property can be further improved without deteriorating the releasability of the deteriorated film of the substrate such as Al, Al-Si, Al-Si-Cu.

The component ratio of the hydrofluoric acid based stripping solution containing the component (d) is such that the component (a) is 0.2 to 10% by weight, preferably 0.5 to 5% by weight, and the component (b) is Is 30 ~
80% by weight, preferably 40 to 70% by weight, component (c) 5 to 50% by weight, preferably 20 to 40% by weight,
Component (d) is 0.5 to 15% by weight, preferably 0.5 to 15% by weight.
A range of from 10 to 10% by weight is preferred. If each component deviates from the above range, the deteriorated film is inferior in peelability and corrosion resistance.

In the method for treating a substrate according to the present invention, after a desired resist pattern is provided on a substrate and etched,
(I) a step of treating the resist pattern with a stripping composition containing a salt of hydrofluoric acid and a base containing no metal ion as a main component, and (II) a step of treating the substrate with a lower alkylene glycol and another water-soluble organic solvent. Rinsing with a rinsing liquid composition for stripping treatment containing: and (III)
It consists of a step of washing with water. The step of providing the resist pattern may be a conventional pattern forming method. For example, a positive or negative resist composition is applied to a substrate such as a silicon wafer or a glass substrate used for producing a semiconductor element or a liquid crystal panel element by using a spin coating method, a roll coating method, a bar coating method or the like. To form a resist layer, and then form a latent image by irradiating or drawing radiation such as ultraviolet rays, far ultraviolet rays including excimer laser, electron beams, and X-rays through a mask pattern,
There is a method of developing using a developing solution such as an alkaline aqueous solution to form a resist pattern. In the peeling treatment, the treatment may be performed at room temperature for 1 to 20 minutes by an immersion method or the like. In the rinsing process, the rinsing process may be performed at room temperature for 3 to 20 minutes. In the conventional peeling treatment method, the washing treatment was directly performed with water without the rinsing treatment (step (II) of the present invention). However, since the washing treatment was repeatedly performed with a large amount of water, fluorine ions and fluoride increased in the washing tank. And
Complicated treatment was required for waste liquid treatment. However, in the substrate treatment method of the present invention, since rinsing treatment is performed before cleaning treatment, fluorine ions and fluorides do not remain in the cleaning tank, so waste liquid treatment in the cleaning tank is required. In addition to being able to reduce the burden,
There is an advantage that the rinsing process and the cleaning process can be continuously and efficiently performed.

[0026]

Now, the present invention will be described in further detail with reference to Examples. However, it should be understood that the present invention is by no means restricted by such specific Examples.

[0027]

EXAMPLES Examples 1 to 13 THMR-i, which is a positive photoresist composed of a naphthoquinonediazide compound and a novolak resin, is formed on a silicon wafer on which an Al-Si-Cu film having a thickness of about 1.0 μm is deposited.
P3300 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) is spin-coated, and prebaked at 90 ° C. for 90 seconds to form a film having a thickness of 2.
A 0 μm resist layer was formed. This resist layer is NS
It was exposed through a mask pattern using R-2005i10D (manufactured by Nikon Corporation) and developed with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide to form a resist pattern. Next, post-baking was performed at 120 ° C. for 90 seconds.

Next, the silicon wafer having the above-mentioned resist pattern was etched by using an etching apparatus TSS-6000 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) using a mixed gas of chlorine and boron trichloride as an etchant at a pressure of 5 Torr and a stage temperature of 2.
Etching at 0 ° C. for 168 seconds, and then using a mixed gas of oxygen and trifluoromethane at a pressure of 20 Torr
r, after-corrosion treatment at a stage temperature of 20 ° C. for 30 seconds. After the above processing, the ashing device TCA-
2400 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) using oxygen gas at a pressure of 0.3 Torr and a stage temperature of 60 ° C. for 150
An ashing process for 2 seconds was performed.

The treated silicon wafer was treated with 1.0% by weight of ammonium fluoride salt and 69.0% of dimethyl sulfoxide.
The sample was immersed in a stripping solution containing 30% by weight of water and 30% by weight of water at 23 ° C. for 5 minutes to perform a stripping treatment. Each of the treated substrates was rinsed with a rinsing liquid composition for peeling treatment having the composition shown in Table 1 (23 ° C., 2
(Immersion treatment for 0 minutes) and further washed with pure water. Table 1 shows the result of observation of the corrosion state of the substrate after the pure water cleaning treatment.

Comparative Example 1 Corrosivity was evaluated in the same manner as in the above example, except that the composition of the rinsing liquid composition for peeling treatment was changed to water only. Table 1 shows the results.

Comparative Example 2 Corrosion was evaluated in the same manner as in the above example, except that the composition of the rinsing liquid composition for the peeling treatment was changed to only isopropyl alcohol. As a result, corrosion did not appear, but ammonium fluoride precipitated during the rinsing treatment.

[0032]

[Table 1] Note) Corrosion state ○: No corrosion ×: Corrosion

[0033]

EFFECT OF THE INVENTION By using the rinsing liquid composition for peeling treatment of the present invention, fine portions on a substrate can be cleaned well, and Al, Al-Si, Al-Si-
Corrosion does not occur in thin metal films such as Cu. Further, in the method for treating a substrate using the rinse solution composition for stripping treatment of the present invention, the pure water washing solution after the rinsing treatment contains only a very small amount of fluorine ions, and the wastewater after the pure water washing treatment is used. No treatment is required, and peeling, rinsing, and cleaning can be performed continuously and efficiently.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/308 H01L 21/30 572B (72) Inventor Toshiaki Nakayama 150 Nakamaruko, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside

Claims (19)

[Claims] 1. A rinsing solution composition for rinsing a substrate treated with a stripping solution containing a salt of hydrofluoric acid and a base containing no metal ion as a main component, wherein the rinsing solution composition is A rinse liquid composition for release treatment, comprising a lower alkylene glycol and another water-soluble organic solvent. Wherein lower alkylene glycol is the general formula (I) ## STR1 _{R n (OH) 2 (I} ) ( wherein, R is a saturated hydrocarbon residue of a linear or branched, n Is an integer of 2 to 6.) The rinsing liquid composition for peeling treatment according to claim 1, wherein the rinsing liquid composition is at least one selected from compounds represented by the following formula: 3. The rinsing liquid composition according to claim 1, wherein the lower alkylene glycol is at least one selected from ethylene glycol and propylene glycol. 4. A lower alkylene glycol of 5 to 60% by weight.
The rinsing liquid composition according to claim 1, further comprising 40 to 95% by weight of a water-soluble organic solvent. 5. The method according to claim 1, wherein the other water-soluble organic solvent is at least one selected from alcohols, glycol monoethers and aprotic polar solvents. A rinse liquid composition for a release treatment. 6. The rinsing liquid composition according to claim 5, wherein the alcohol is at least one selected from methyl alcohol, ethyl alcohol and isopropyl alcohol. 7. The rinsing liquid composition according to claim 5, wherein the glycol monoether is diethylene glycol monobutyl ether. 8. An aprotic polar solvent comprising dimethyl sulfoxide, N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone and 1,
The rinsing liquid composition for a peeling treatment according to claim 5, wherein the rinsing liquid composition is at least one selected from 3-dimethyl-2-imidazolidinone. 9. A rinsing liquid composition for stripping treatment according to any one of claims 1 to 8, further comprising an anticorrosive. 10. The anticorrosion agent is pyrocatechol, 2-butyne-
The rinsing liquid composition according to claim 9, wherein the rinsing liquid composition is at least one selected from 1,4-diol, benzotriazole and D-sorbitol. 11. The peeling method according to claim 9, comprising 5 to 40% by weight of a lower alkylene glycol, 55 to 85% by weight of a water-soluble organic solvent and 0.5 to 15% by weight of an anticorrosive. A rinse liquid composition for treatment. 12. A stripper comprising a salt of hydrofluoric acid and a base containing no metal ion as a main component, comprising: (a) a salt of hydrofluoric acid and a base containing no metal ion; Sulfoxide, N, N-dimethylformamide, N, N
-At least one selected from dimethylacetamide, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, ethylene glycol and diethylene glycol monobutyl ether, and (c) water containing hydrogen ions thereof 2. The rinsing liquid composition for stripping treatment according to claim 1, wherein the rinsing liquid has a concentration (pH) in the range of 5 to 8. 13. A stripper comprising a salt of hydrofluoric acid and a base containing no metal ion as a main component, comprising:
The rinsing liquid composition for a stripping treatment according to claim 12, which is a resist stripping liquid containing 10 to 10% by weight, 30 to 90% by weight of the component (b), and 5 to 50% by weight of the component (c). Stuff. 14. A stripping solution for a resist, wherein a stripping solution containing a salt of hydrofluoric acid and a base containing no metal ion as a main component is ammonium fluoride as the component (a) and dimethyl sulfoxide as the component (b). 2. The method according to claim 1, wherein
3. The rinse liquid composition for peeling treatment according to 2. 15. A method for processing a substrate, comprising the steps of: providing a desired resist pattern on a substrate; performing an etching process; (I) A step of treating the resist pattern with a stripping solution containing a salt of hydrofluoric acid and a base containing no metal ion as a main component (II) The substrate contains a lower alkylene glycol and another water-soluble organic solvent Of rinsing with a rinsing liquid composition for peeling treatment to be performed (III) Step of rinsing with water 16. The method for treating a substrate according to claim 15, wherein the stripping solution in the step (I) comprises (a) a salt of hydrofluoric acid and a base not containing a metal ion, (b) dimethyl sulfoxide, N, N -Dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, 1,3-
Stripping solution for resist containing at least one selected from dimethyl-2-imidazolidinone, ethylene glycol and diethylene glycol monobutyl ether, and (c) water and having a hydrogen ion concentration (pH) in the range of 5 to 8 A method for processing a substrate, comprising: 17. The method for treating a substrate according to claim 16, wherein the component (a) in the stripping solution in the step (I) is ammonium fluoride, and the component (b) is dimethyl sulfoxide. 18. The method of claim 1, wherein the stripping solution in the step (I) comprises the component (a) 0.2
10 to 10% by weight, 30 to 90% by weight of the component (b) and (c)
17. The method for treating a substrate according to claim 16, which is a resist stripping solution containing 5 to 50% by weight of a component. 19. The substrate processing method according to claim 15, wherein the rinse liquid composition for the peeling treatment in the step (II) is any one of claims 2 to 11.