JPH10224697A - Solid-state image pickup device and drive method for the solid-state image pickup device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state image pickup device that reads externally an output of photo detection sections arranged in a matrix and its drive method by which an image pickup speed is made high efficiently. SOLUTION: The solid-state image pickup device is provided with a plurality of photo detection sections 1, a group of vertical read lines 2 provided to each vertical column of the photo detection sections 1, a vertical scanning means 3 that connects outputs of a plurality of photo detection sections to the vertical read lines 2 sequentially according to the read sequence of the predetermined horizontal lines, a multiplexer means 4 that shares signals from the vertical read line group 2 to a plurality of output destinations synchronously with the connection operation of the vertical scanning means 3, a plurality of horizontal storage means 5 that store temporarily the signals from the vertical read line group 2 at each output destination of the multiplexer means 4, and a plurality of horizontal scanning means 6 applying the horizontal scanning individually to each horizontal storage means 5 for each of a plurality of the horizontal storage means 5 individually.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device for picking up a light image at a light detector arranged in a plane and converting the image into image information, and a driving method thereof. Accordingly, the present invention relates to a solid-state imaging device capable of high-speed imaging and a driving method thereof.

[0002]

2. Description of the Related Art Conventionally, several solid-state imaging devices for simultaneously reading a plurality of horizontal lines have been proposed (Japanese Patent Laid-Open No. Sho 62).
-128679, JP-A-1-154678).

FIG. 9 is a block diagram for explaining a conventional example of this type. In FIG. 9, photodetectors 61, such as photodiodes, are arranged in the horizontal and vertical directions. For each vertical column of the photodetector 61, a vertical read line 62
Are arranged. The light detection unit 61 and the vertical read line 62 are connected via a MOS switch group 63a. The gate electrodes of the MOS switch group 63a are commonly connected for each horizontal row of the pixel array, and the shift register 63b
Is connected to each output.

On the other hand, the output of the vertical read line group 62 is input to a multiplexer means 64. The output destination of the multiplexer means 64 is provided with horizontal storage means 65a and 65b for storing outputs of one horizontal line, respectively.
These two horizontal storage means 65a and 65b are driven by one horizontal scanning means 66. FIG. 10 is a diagram showing the output timing of the image signal in the conventional example.

The operation of the conventional example will be described below with reference to FIGS. First, a first vertical reading period (FIG. 1)
0), the shift register 63b stores the MO in the n-th row.
The S switches 63a are all set to the ON state. Then, the signal charges accumulated in the photodetector 61 in the n-th row are transferred to the multiplexer means 64 via the group of the vertical readout lines 62.
To enter.

The multiplexer means 64 distributes the signal of the n-th row to the horizontal storage means 65a and outputs it. The horizontal accumulation means 65a accumulates the given signal of the nth row as it is. Next, a second vertical readout period (FIG. 10)
, The shift register 63b sets all the m-th row MOS switch groups 63a to the ON state. Then m
The signal charges accumulated in the photodetector 61 in the row are input to the multiplexer means 64 via the group of the vertical readout lines 62.

[0007] The multiplexer means 64 distributes and outputs the signal of the m-th row to the horizontal storage means 65b. The horizontal accumulation means 65b accumulates the given signal of the m-th row as it is. In this state, the horizontal scanning unit 66 drives the horizontal storage units 65a and 65b in parallel, and horizontally transfers the signals on the nth and mth rows simultaneously.

As described above, in this conventional example, two horizontal lines can be read during one horizontal reading period. Therefore, the vertical scanning period for one screen is almost halved, and it is possible to realize a high-speed shooting that is about twice as fast as that of a normal solid-state imaging device.

[0009]

By the way, in such a conventional example, the vertical readout line 62 is used for the vertical transfer of a plurality of horizontal lines (the nth row signal and the mth row signal).

Therefore, when one horizontal line is vertically transferred via the vertical read line 62, the other horizontal line cannot use the vertical read line 62. Therefore, as shown in FIG. 10, the operation of the horizontal accumulation unit 65b is completely stopped during the first vertical readout period.
On the other hand, during the second vertical readout period, the horizontal storage means 65
The operation of a is completely stopped.

Since such a stop time occurs every time a vertical transfer is performed, the total stop time cannot be ignored. For this reason, there has been a problem that higher-speed shooting cannot be realized. In order to solve such a problem, it is conceivable to provide dedicated vertical read lines as many as the number of horizontal lines to be read simultaneously. In such a measure, a plurality of horizontal lines can be vertically transferred together, so that the above-mentioned stop time can be omitted for the time being.

However, in such a measure, it is necessary to arrange the vertical readout lines on the same surface as the light detecting section 61 more than twice. For this reason, there has been a problem that the aperture ratio in the light detection unit is reduced, and the chip size is increased. Therefore, in the solid-state imaging device according to the first aspect, in order to solve the above-described problem, the solid-state imaging device can increase the imaging speed while sharing the vertical readout line with the vertical transfer of a plurality of lines as in the related art. It is an object to provide an imaging device.

[0013] In the solid-state imaging device according to the second and third aspects,
It is another object of the present invention to provide a solid-state imaging device capable of further increasing the photographing speed, in addition to the object of the first aspect. According to the driving method of the fourth aspect, similarly to the object of the first aspect, the driving of the solid-state imaging device capable of increasing the photographing speed while sharing the vertical read line for the vertical transfer of a plurality of lines as in the related art. The aim is to provide a method.

The driving method according to the fifth and sixth aspects is to provide a driving method of a solid-state imaging device capable of further increasing the photographing speed, in addition to the object of the fourth aspect.

[0015]

FIG. 1 is a block diagram showing a first embodiment of the present invention;
It is a figure explaining the invention described in 4, 5.

According to the first aspect of the present invention, a plurality of photodetectors 1 arranged in a plane and a group of vertical readout lines 2 provided for each vertical column of the photodetectors 1 are predetermined. In the reading order of the horizontal lines, the vertical scanning means 3 sequentially connects the outputs of the plurality of photodetectors 1 to the vertical reading lines 2, and the signals from the vertical reading line group 2 are synchronized with the connection operation of the vertical scanning means 3. A multiplexer means 4 for distributing to a plurality of output destinations; a plurality of horizontal storage means 5 provided for each output destination of the multiplexer means 4 for temporarily storing a signal from the vertical readout line group 2 for each horizontal line; A plurality of horizontal scanning means 6 are provided for each storage means 5 and individually drive the horizontal storage means 5 to transfer signals of horizontal lines horizontally.

According to a second aspect of the present invention, in the solid-state imaging device according to the first aspect, the plurality of horizontal scanning means 6 are synchronized with the completion of the accumulation of the corresponding horizontal accumulation means 5 by the horizontal accumulation means. 5 is characterized by horizontal transfer of signals for horizontal lines. FIG. 2 is a diagram for explaining the invention according to the third and sixth aspects. According to a third aspect of the present invention, in the solid-state imaging device according to the first or second aspect, the horizontal accumulating means 5 includes a plurality of divided accumulating means 7 for dividing and accumulating signals for one horizontal line into a plurality of signals. The horizontal scanning means 6 drives the plurality of divided accumulation means 7 in parallel,
It is characterized by horizontally transferring signals for horizontal lines.

According to a fourth aspect of the present invention, there are provided a plurality of photodetectors 1 arranged in a plane, a group of vertical read lines 2 provided for each vertical column of the photodetectors 1, and a group of vertical read lines. A method for driving a solid-state imaging device, comprising: multiplexer means 4 for distributing a signal from a plurality of output destinations to a plurality of output destinations; and a plurality of horizontal storage means 5 for individually and temporarily storing the signals distributed by the multiplexer means 4. Connecting the output of the photodetector 1 to the vertical readout line 2 in sequence in a predetermined readout order of the horizontal lines, and multiplexing the multiplexer means 4 in synchronization with the connection operation between the photodetector 1 and the vertical readout line 2. Driving and sequentially connecting the outputs of the vertical readout line group 2 to the plurality of horizontal storage means 5; and separately driving each of the horizontal storage means 5 to individually and horizontally transfer signals of horizontal lines. Characterized in that it has and.

According to a fifth aspect of the present invention, in the method for driving a solid-state imaging device according to the fourth aspect, each of the horizontal accumulating means 5 is provided.
The horizontal transfer of the signal for the horizontal line from each horizontal storage means 5 is performed in synchronization with the completion of the storage. Claim 6
In the driving method of the solid-state imaging device according to the fourth or fifth aspect, the invention described in the fourth aspect is characterized in that a signal for one horizontal line stored in the horizontal storage means 5 is divided into a plurality of signals and horizontally transferred in parallel. Features.

(Operation) In the solid-state imaging device according to the first aspect, the vertical scanning means 3 sequentially connects the outputs of the corresponding photodetectors 1 to the vertical read lines 2 in accordance with a predetermined read order of the horizontal lines. The output of the connected photodetector 1 is
The signal is input to the multiplexer means 4 via the vertical read line 2.

The multiplexer means 4 sequentially distributes the input signals for the horizontal lines to a plurality of horizontal storage means 5. The plurality of horizontal accumulating means 5 accumulate the distributed signals. Here, each of the horizontal accumulation units 5 includes a dedicated horizontal scanning unit 6 and is driven at an individual timing.

Therefore, during the period when the multiplexer means 4 vertically transfers the output of the photodetecting section 1 to one horizontal storage means 5, the other horizontal storage means 5 do not stop the operation, and operate for the horizontal line. The signal can be horizontally transferred to the outside. Therefore, as in the example shown in FIG. 5, the conventional stop time (FIG. 10) can be reliably reduced, and the shooting speed can be increased without difficulty.

In the present invention, the number of horizontal scanning means 6 is slightly increased. However, as compared with the above-mentioned “means for providing a dedicated vertical read line”, the increase in the occupied area on the chip is remarkably small. Therefore, problems such as a decrease in the aperture ratio of the light detection unit 1 and an increase in the overall chip size hardly occur. In the solid-state imaging device according to the second aspect, the plurality of horizontal scanning units 6 horizontally transfer signals of horizontal lines from the horizontal storage units 5 in synchronization with the completion of the accumulation of the corresponding horizontal storage units 5.

With such operation timing, FIG.
The stop time as shown in (1) is completely eliminated, and the shooting speed can be efficiently increased. In the solid-state imaging device according to the third aspect, signals for one horizontal line are divided into a plurality of parts and read out in parallel. Therefore, the horizontal reading period can be shortened without difficulty, and the shooting speed can be further increased.

In the driving method according to the fourth aspect, the corresponding light detecting section 1 is read in accordance with a predetermined reading order of horizontal lines.
Are sequentially connected to the vertical readout line 2. The output of the connected photodetector 1 is input to the multiplexer 4 via the vertical readout line 2. On the other hand, by driving the multiplexer means 4 in synchronization with the connection operation between the photodetector 1 and the vertical readout line 2, the horizontal lines input to the multiplexer means 4 are sequentially distributed to the plurality of horizontal storage means 5. Each horizontal accumulating means 5 accumulates the sorted horizontal lines.

The individual horizontal storage means 5 are driven at individual timings and output signals for horizontal lines. Therefore, during the period when the output of the photodetector 1 is vertically transferred to one horizontal storage means 5, it is possible to horizontally transfer signals of horizontal lines from the other horizontal storage means 5 to the outside.

Therefore, the stop time as shown in FIG. 10 can be reduced, and the shooting speed can be increased without difficulty. According to the driving method of the fifth aspect, the signals of the horizontal lines are horizontally transferred from the horizontal storage means 5 in synchronization with the completion of the storage of the individual horizontal storage means 5. With such operation timing, the stop time as shown in FIG. 10 is completely eliminated, and the shooting speed can be efficiently increased.

In the driving method according to the sixth aspect, signals for one horizontal line are divided into a plurality of parts and read in parallel. Therefore, the horizontal reading period can be shortened without difficulty, and the shooting speed can be further increased.

[0029]

Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 3 is a diagram showing a first embodiment (corresponding to claims 1, 2, 4, and 5). Note that FIG. 1 illustrates a configuration of 3 × 3 pixels as an example.

In FIG. 3, a unit pixel 10 includes a photodiode 11 for performing photoelectric conversion and a photodiode 1 for performing photoelectric conversion.
JFET (junction field effect transistor) 12 for current amplifying the electric charge stored in the photodiode 1 and the photodiode 1
It comprises a MOS switch 13 for transferring the electric charge accumulated in 1 to the gate electrode of the JFET 12, and a MOS switch 14 for initializing the gate potential of the JFET 12.

The gate electrodes of the MOS switches 13 are commonly connected to each horizontal row of the pixel array, and are connected to the control outputs φTG1 to φTG1 to 3 of the vertical scanning circuit 17, respectively.
The drain electrodes of the MOS switches 14 are commonly connected to each horizontal row of the pixel array, and are connected to control outputs φRSD1 to φRSD1 to 3 output from the vertical scanning circuit 17, respectively. The gate electrodes of the MOS switches 14 are commonly connected to all of the pixel arrays, and are supplied with a drive pulse φRSG.

On the other hand, the source electrode of the JFET 14 is commonly connected to each vertical column of the pixel array,
5 is constituted. A reset MOS switch 15a and a bias current source 16 are connected to these vertical read lines 15, respectively. The drive pulse φRSTV is supplied to the gate electrode of the MOS switch 15a. One end of each of the MOS switches 18s, 18d, 19s, and 19d is connected to each output terminal of the vertical readout line 15.

These MOS switches 18s, 18d,
19s and 19d indicate the drive pulse φTs applied to each gate electrode.
1, φTd1, φTs2, and φTd2 are selectively supplied to form a multiplexer circuit.

The MOS switches 18s, 18d, 19s,
At the other end of 19d, capacitors 20s, 20d, 21s, and 2 for accumulating signals for horizontal lines in pixel units.
1d are respectively connected. These capacitors 20
s, 20d, 21s, 21d are connected to horizontal readout lines 24s, 24d, 25s, 25d via horizontal scanning MOS switches 22s, 22d, 23s, 23d, respectively.

The gate electrodes of the MOS switches 22s and 22d have control outputs φH11 to φH11 of the horizontal scanning circuit 28, respectively.
13 are respectively connected. MOS switch 23 described above
The control outputs φH21 to φH23 of the horizontal scanning circuit 29 are connected to the gate electrodes of s and 23d, respectively. Further, the resetting MOS switches 26s, 26d, 27s,
27d are connected to the respective gate electrodes, and reset driving pulses φRSTH1 and φRSTH2 are supplied to the respective gate electrodes.

As for the correspondence between the first embodiment and the first and second aspects of the present invention, the photodetector 1 corresponds to the photodiode 11 and the vertical readout line 2 corresponds to the vertical readout line 15. , The vertical scanning means 3 includes a vertical scanning circuit 17.
The multiplexer means 4 corresponds to the MOS switches 18s and 18d and the MOS switches 19s and 19d, the horizontal storage means 5 corresponds to the capacitors 20s and 20d and the capacitors 21s and 21d, and the horizontal scanning means 6 corresponds to the It corresponds to the horizontal scanning circuits 28, 29 and the MOS switches 22s, 22d, 23s, 23d.

FIG. 4 is a diagram showing the drive timing of the first embodiment. FIG. 5 is a diagram showing the output timing of the image signal in the first embodiment. Hereinafter, the operation of the first embodiment will be described with reference to these drawings. First,
At the timing of the period t1, φRSD1 is set to a low potential while φRSD1 is set to a high potential. By such an operation, the gate potentials of the JFETs 12 arranged in the first row are all initialized.

At the timing of period t2, φRST
ΦTd1 is set to a high potential while V is set to a low potential. Therefore, the source follower output of the JFET 12 in the first row is M
The capacitor 20d is charged via the OS switch 18d. By such an operation, a dark signal (reference signal) generated in the JFET 12 in the first row is accumulated in the group of the capacitors 20d.

At the timing of period t3, φTG1
To a low potential. Therefore, the photodiode 1 in the first row
The signal charge photoelectrically converted at 1 is transferred to the gate electrode of the JFET 12 via the MOS switch 13. Period t
At timing 4, φTSV is set to a high potential while φRSTV is set to a low potential. Therefore, JF on the first line
The source follower output of ET12 is connected to the MOS switch 18
The capacitor 20s is charged via s. By such an operation, the optical signals in the first row are accumulated in the group of the capacitors 20s.

With the above operations (t1 to t4), the first vertical read period shown in FIG. 5 ends. Continuing with the first vertical reading period, the horizontal scanning circuit 28 outputs the control outputs φ11 to φ13 at the timings of the periods t11 to t13.
Is set to a high potential. As a result, the capacitors 20s, 2
The signal of the first row stored in 0d is the MOS switch 22
The signals are sequentially read out to the horizontal readout lines 24s and 24d via s and 22d, and are output to the outside as image signals Vos1 and Vod1.

An external processing circuit (not shown) generates a high-quality image signal from which a dark signal (fixed pattern noise) has been removed by taking the difference between these image signals Vos1 and Vod1. In parallel with such horizontal transfer of the first row (periods t11 to t13), the vertical scanning circuit 17
The dark signal and the optical signal in the third row are read out vertically.

That is, at the timing of the period t5, φRSD3 is set to a high potential while φRSG is set to a low potential. By such an operation, JFET1 arranged in the third row
2 are all initialized. At the timing of the period t6, while φRSTV is set to a low potential, φTd
3 is set to a high potential. Therefore, the source follower output of the JFET 12 in the third row charges the capacitor 21d via the MOS switch 19d. With such an operation,
The dark signal (reference signal) generated in JFET 12 in the third row is
It is stored in a group of capacitors 21d.

At the timing of period t7, φTG3
To a low potential. Therefore, the photodiode 1 in the third row
The signal charge stored in 1 is transferred to the gate electrode of the JFET 12 via the MOS switch 13. At the timing of the period t8, while φRSTV is kept at a low potential,
Ts3 is set to a high potential. Therefore, JFET1 in the third row
The second source follower output charges the capacitor 21s via the MOS switch 19s. By such an operation, the optical signals in the third row are accumulated in the group of the capacitors 21s.

With the above operations (t5 to t8), the second vertical read period shown in FIG. 5 ends. Continuing with the second vertical reading period, the horizontal scanning circuit 29 sets the control outputs φ21 to φ23 to a high potential at the timing of the periods t21 to t23. As a result, the capacitors 21s, 21s
The signal of the third row accumulated in the d is the MOS switch 23
The signals are sequentially read out to horizontal readout lines 25s and 25d via s and 23d, and output to the outside as image signals Vos2 and Vod2.

An external processing circuit (not shown) generates a high-quality image signal from which dark signals (fixed pattern noise) have been removed by taking the difference between these image signals Vos2 and Vod2.

By the operation described above, the first row and the third row
The image signals in the row are read out with a slight time difference.
By repeating the above-described read operation of a plurality of lines while vertically scanning a read row, high-speed reading of image signals is realized. FIG. 6 is a diagram showing an example of this kind of high-speed reading. In the figure, an image signal composed of 256 horizontal lines is read in parallel by two horizontal lines.

By reading two horizontal lines in parallel in this manner, within one vertical period (1 V in FIG. 6),
Image signals Vos1 and Vos2 for two screens can be read. In particular, in the first embodiment, the horizontal scanning circuits 28 and 29 perform horizontal transfer of image signals at individual timings. Therefore, as shown in FIG. 5 and FIG. 6, it is possible to reduce unnecessary stoppage time and to realize a high shooting speed without difficulty.

In the first embodiment, the capacitor 2
Following the completion of the accumulation of 0s, 20d, 21s, 21d,
The signal reading of the horizontal line is immediately executed. Therefore, the conventional stop time (FIG. 10) is completely omitted, and the shooting speed can be maximized. next,
Another embodiment will be described.

(Second Embodiment) FIG. 7 is a diagram showing a second embodiment (corresponding to claims 1 to 6). Regarding the feature points of the configuration according to the second embodiment, two systems of horizontal read lines 31 and 32 are arranged such that MOS read lines 31 and 32 are alternately arranged in the horizontal direction.
It is connected to capacitors 20 s, 20 d, 21 s, and 21 d constituting a horizontal line via switch groups 33 and 34.

The same components as those shown in FIG. 3 are denoted by the same reference numerals and are shown in FIG.
The description here is omitted. Further, regarding the correspondence between the second embodiment and the invention described in claim 3, the light detection unit 1
Corresponds to the photodiode 11, the vertical read line 2 corresponds to the vertical read line 15, the vertical scanning means 3 corresponds to the vertical scanning circuit 17 and the MOS switch 13, and the multiplexer means 4 has the MOS switches 18s, 18d and M
The horizontal storage means 5 corresponds to the OS switches 19s and 19d.
Are capacitors 20s, 20d and 21s,
21d, the horizontal scanning means 6 includes a horizontal scanning circuit 28,
29 and MOS switches 22s, 22d, 23s, 2
3d, one divided storage means 7 corresponds to odd-numbered capacitors 20s, 20d, 21s, and 21d, and the other divided storage means 7 has even-numbered capacitors 20s, 20s.
d, 21s and 21d.

FIG. 8 is a diagram showing the output timing of the image signal in the second embodiment. In the second embodiment, for example, by simultaneously setting φH11 and φH12 to a high potential, the odd-numbered pixels and the even-numbered pixels on the horizontal line can be simultaneously read out to the horizontal readout lines 31 and 32. With such an operation, in the second embodiment, the horizontal readout period can be halved, and the shooting speed can be further increased.

In the above-described embodiment, the horizontal transfer of the horizontal line is performed by the MOS structure. However, the present invention is not limited to this configuration. For example, instead of the capacitors 20s, 20d, 21s, and 21d, four H
It is also possible to arrange a CCD and perform horizontal transfer by driving the CCD. In the above-described embodiment, two horizontal lines are read in parallel, but the present invention is not limited to this configuration. For example, three or more horizontal lines may be read in parallel. With such a configuration, it is possible to further increase the shooting speed.

Further, in the second embodiment, the horizontal line is distributed to odd-numbered pixels and even-numbered pixels and transferred in parallel. However, the present invention is not limited to this configuration. In general,
What is necessary is just to divide the horizontal line into a plurality of parts and transfer them in parallel. For example, a horizontal line may be divided into a first half and a second half and transferred in parallel, or a horizontal line may be divided into three or more and transferred in parallel.

[0054]

As described above, according to the first and fourth aspects of the present invention, a signal can be read from each horizontal storage means independently. Therefore, while the multiplexer means is distributing the signal to one horizontal storage means, the other horizontal storage means can horizontally transfer the signal of the horizontal line to the outside without stopping the operation.

Therefore, the conventional stopping time (FIG. 10) can be reduced and the shooting speed can be increased without difficulty. Further, in the present invention, the number of horizontal scanning means and the like is slightly increased as compared with the related art. However, the increase in the area occupied on the chip is remarkably small as compared with the "method of providing dedicated vertical read lines by the number of horizontal lines to be read simultaneously". Therefore, as compared with the above-mentioned measures, problems such as a decrease in the aperture ratio of the light detection unit and an increase in the overall chip size hardly occur.

According to the second and fifth aspects of the present invention, the signal reading of the horizontal line is executed in synchronization with the completion of the accumulation of the individual horizontal accumulation means. With such operation timing,
Conventional stop time (FIG. 10) can be saved efficiently,
It is possible to further increase the shooting speed. According to the third and sixth aspects of the present invention, signals for one horizontal line are divided into a plurality of parts and read out in parallel. Therefore, the horizontal readout period can be significantly reduced, and the shooting speed can be further increased.

As described above, in an image pickup apparatus such as an electronic camera to which the present invention is applied, it is possible to easily and surely increase the photographing speed.

[Brief description of the drawings]

FIG. 1 is a diagram for explaining the invention described in claims 1, 2, 4, and 5;

FIG. 2 is a diagram for explaining the invention according to claims 3 and 6;

FIG. 3 is a diagram showing a first embodiment (corresponding to claims 1, 2, 4, and 5);

FIG. 4 is a diagram illustrating drive timing according to the first embodiment.

FIG. 5 is a diagram illustrating an output timing of an image signal according to the first embodiment.

FIG. 6 is a diagram illustrating an example of high-speed reading according to the first embodiment.

FIG. 7 is a view showing a second embodiment (corresponding to claims 1 to 6);

FIG. 8 is a diagram illustrating output timings of image signals according to the second embodiment.

FIG. 9 is a block diagram showing a conventional example.

FIG. 10 is a diagram showing output timing of an image signal in a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Photodetection part 2 Vertical readout line 3 Vertical scanning means 4 Multiplexer means 5 Horizontal accumulation means 6 Horizontal scanning means 7 Division accumulation means 10 Unit pixel 11 Photodiode 12 JFET 13 MOS switch 14 MOS switch 15 Vertical readout line 15a MOS switch 16 Bias current Source 17 Vertical scanning circuit 18s MOS switch 19s MOS switch 20s Capacitor 21s Capacitor 22s MOS switch 23s MOS switch 24s Horizontal read line 25s Horizontal read line 28 Horizontal scan circuit 29 Horizontal scan circuit 31 Horizontal read line 32 Horizontal read line 33 MOS switch group 34 MOS switch group 61 Photodetector 62 Vertical read line 63a MOS switch 63b Shift register 64 Multiplexer means 65 Horizontal storage 66 horizontal scanning means

Claims (6)

[Claims] A plurality of photodetectors arranged in a plane; a group of vertical read lines provided for each of a plurality of vertical columns of the plurality of photodetectors; Vertical scanning means for sequentially connecting the outputs of a plurality of photodetectors to the vertical readout lines; multiplexer means for distributing signals from the vertical readout line group to a plurality of output destinations in synchronization with the connection operation of the vertical scanning means A plurality of horizontal storage means provided for each output destination of the multiplexer means for temporarily storing a signal from the vertical read line group for each horizontal line; and a plurality of horizontal storage means provided individually for each of the plurality of horizontal storage means. A solid-state imaging device comprising: a plurality of horizontal scanning units that individually drive horizontal accumulation units and horizontally transfer signals of horizontal lines. 2. The solid-state imaging device according to claim 1, wherein the plurality of horizontal scanning units output signals for horizontal lines from the horizontal accumulation units in synchronization with completion of accumulation of the corresponding horizontal accumulation units. A solid-state imaging device characterized by transferring. 3. The solid-state imaging device according to claim 1, wherein the horizontal accumulation unit includes a plurality of divided accumulation units that divide a signal for one horizontal line into a plurality of pieces and respectively accumulate the signals. The solid-state imaging device according to claim 1, wherein the horizontal scanning unit drives the plurality of divided storage units in parallel to transfer signals of horizontal lines horizontally. 4. A plurality of photodetectors arranged in a plane, a group of vertical read lines provided for each vertical column of the plurality of photodetectors, and a plurality of signals from the vertical read line group. A driving method for reading an image signal by driving a solid-state imaging device including a multiplexer means for distributing to an output destination, and a plurality of horizontal accumulation means for individually and temporarily storing signals distributed by the multiplexer means. Connecting the output of the photodetector to the vertical readout line sequentially in a predetermined readout order of horizontal lines; and the multiplexer means in synchronization with the connection operation between the photodetection section and the vertical readout line. And sequentially connecting the outputs of the group of vertical read lines to the plurality of horizontal storage units. And individually horizontally transferring the signals. 5. The method for driving a solid-state imaging device according to claim 4, wherein a signal for a horizontal line is horizontally transferred from each horizontal storage unit in synchronization with the completion of storage of each horizontal storage unit. A method for driving a solid-state imaging device. 6. The method for driving a solid-state imaging device according to claim 4, wherein a signal for one horizontal line stored in said horizontal storage means is divided into a plurality of signals and horizontally transferred in parallel. Driving method of the solid-state imaging device.