JPH10224179A - Double-mode saw filter - Google Patents

Double-mode saw filter

Info

Publication number
JPH10224179A
JPH10224179A JP4296897A JP4296897A JPH10224179A JP H10224179 A JPH10224179 A JP H10224179A JP 4296897 A JP4296897 A JP 4296897A JP 4296897 A JP4296897 A JP 4296897A JP H10224179 A JPH10224179 A JP H10224179A
Authority
JP
Japan
Prior art keywords
idt
filter
sides
idts
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4296897A
Other languages
Japanese (ja)
Inventor
Kunihito Yamanaka
国人 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP4296897A priority Critical patent/JPH10224179A/en
Publication of JPH10224179A publication Critical patent/JPH10224179A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the capacity conversion value of the interstage impedance of a filter to nearly zero by differentiating the logarithms of IDT on both sides of inter digital transducers, so as to maintain filtering characteristic. SOLUTION: Three IDT 2 to 4 and reflectors 5 and 5 are arranged along the propagating direction of surface waves, by arranging IDT 2 to 4 on the main surface of the piezoelectric substrate 1 of a double-mode surface acoustic wave(SAW) filter for energizing acoustic waves of first and third modes along the propagating direction of a surface wave to constitute a first to third vertically connecting double-mode SAW(DMS) filter utilizing the two modes. In this case IDT 3 and 4 on both sides of center IDT 2 are made asymmetrical, that is, electrode finger logarithms are differentiated. In this way, the capacitor conversion value of inter-stage impedance is made nearly zero, one of intervals between the tip part of IDT 2, positioned in the center and the tip parts of respective IDT 3 and 4 on both sides, is made nearly 5λ/4, and the other is made different from this to reduce ripples within a passing band.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は共振子型の弾性表面
波フィルタ(以下SAWフィルタと称す)に関し、特に
共振子型SAWフィルタを多段接続する場合に必要とな
る段間の結合容量を不要とし、小型化した1次−3次縦
結合二重モードSAWフィルタに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resonator type surface acoustic wave filter (hereinafter referred to as "SAW filter"), and more particularly, to eliminating the need for coupling capacitance between stages which is required when connecting resonator type SAW filters in multiple stages. And a miniaturized first- and third-order longitudinally-coupled dual-mode SAW filter.

【0002】[0002]

【従来の技術】近年、SAWフィルタは小型化、高周波
化、量産性等に優れているため、携帯電話をはじめとす
る無線機に多く利用されている。特に最近のPHS、コ
ードレス電話等では第一IFフィルタの高周波化と広帯
域化が要求され、この要件を満たすデバイスとしてはS
AWフィルタが最適である。共振子型SAWフィルタの
広帯域化を図る手段として1次と3次のモードを利用し
た所謂1次−3次縦結合二重モードSAWフィルタ(以
下、1次−3次DMSフィルタと称す)が知られてい
る。図5(a)はその一例を示す模式的平面図で、矩形
状の圧電性基板1の主面上に3個のインターディジタル
トランスジューサ(以下IDTと称す)12、13、1
4とその両側にグレーティング型の反射器15、15を
共に表面波の伝搬方向に沿って配置する。 IDT12
〜14はそれぞれ互いに間挿し合う複数本の電極指を有
する一対のくし形電極により構成されるものであり、I
DT13と14の電極指対数は互いに同数とし中央ID
T12の中心線に対して対称に配置する。また、IDT
12〜14の一方のくし型電極はアース電位に接続さ
れ、他方のくし形電極は入力または出力に電気的に接続
されている。
2. Description of the Related Art In recent years, SAW filters have been widely used in wireless devices such as mobile phones, because of their excellent miniaturization, high frequency, mass productivity, and the like. Particularly in recent PHS, cordless telephones, etc., the first IF filter is required to have a higher frequency and a wider band.
An AW filter is optimal. As a means for widening the band of a resonator type SAW filter, a so-called first-order / third-order longitudinally-coupled double-mode SAW filter (hereinafter, referred to as a first-order-third-order DMS filter) using first-order and third-order modes is known. Have been. FIG. 5 (a) is a schematic plan view showing an example of this, in which three interdigital transducers (hereinafter referred to as IDTs) 12, 13, 1
4 and grating-type reflectors 15 on both sides thereof are arranged along the propagation direction of the surface wave. IDT12
14 to 14 are constituted by a pair of comb-shaped electrodes each having a plurality of electrode fingers interposed therebetween.
The number of electrode finger pairs of DT13 and DT14 is the same as each other and the center ID
It is arranged symmetrically with respect to the center line of T12. Also, IDT
One of the electrodes 12 to 14 is connected to a ground potential, and the other electrode is electrically connected to an input or an output.

【0003】図5(a)に示す反射器15、15はID
T12、14から漏洩する弾性表面波を反射する機能を
有し、IDT12〜14で励起される弾性表面波のエネ
ルギーを反射器15、15間に閉じ込め、音響的に結合
させることにより1次〜3次のモードを強勢に生じさせ
る。このとき、2次モードも当然励起されるが、該モー
ドの変位分布は表面波の伝搬方向にIDT12の中心に
対し反対称に分布するため、発生電荷も同様にIDT1
2の中心に対し異符号の電荷が発生し、図5(a)に示
すようなIDTの配置では入出力IDT間で相殺されて
実質上励起されないのに等しく、1次モードと3次モー
ドのみを利用することが可能となる。
[0003] Reflectors 15, 15 shown in FIG.
It has a function of reflecting surface acoustic waves leaking from T12 and T14, and confine energy of surface acoustic waves excited by the IDTs 12 to 14 between the reflectors 15 and 15 to acoustically couple the primary to third. Forces the next mode. At this time, the secondary mode is naturally excited. However, since the displacement distribution of the mode is distributed anti-symmetrically with respect to the center of the IDT 12 in the propagation direction of the surface wave, the generated charges are similarly generated in the IDT 1.
In the arrangement of the IDTs as shown in FIG. 5 (a), electric charges of different signs are generated at the center of the second and the input and output IDTs are offset and substantially not excited. Can be used.

【0004】図5(a)に示す各IDTは所謂正規型I
DTであり、各電極指幅及び電極指間のスペースは所望
の中心周波数の波長λの1/4に設定するのが一般的で
ある。 1次−3次DMSフィルタのおいては、周知の
ように最大の帯域幅が得られるのは図5(b)に示す電
極指間隔LがL=λ/4の場合である。ところが、図5
(b)に示す相隣接するIDTの端部の電極指17、1
8の中心間間隔Lをλ/4に設定すると、通常、電極指
17、18の幅は上述したようにλ/4であるため、相
隣接する電極指17、18同士は接触して入出力とアー
スが短絡することになる。そこで、図5(c)に示す電
極指16のように電極指幅がλ/2の一本の電極指とし
て構成するのが一般的である。従って、本明細書では最
大の帯域幅が得られる電極パターンを記述するときに電
極指の中心間間隔Lをλ/4と表現するのではなく、図
5(c)に示すように電極指16を挟んで隣接する電極
指の中心間間隔をとり、5/4λと記述することとし
た。
[0004] Each IDT shown in FIG.
DT, and the width of each electrode finger and the space between the electrode fingers are generally set to 波長 of the wavelength λ of a desired center frequency. In the first-third-order DMS filter, the maximum bandwidth is obtained as is well known when the electrode finger interval L shown in FIG. 5B is L = λ / 4. However, FIG.
The electrode fingers 17, 1 at the ends of adjacent IDTs shown in FIG.
When the center distance L between the electrodes 8 is set to λ / 4, the width of the electrode fingers 17 and 18 is λ / 4 as described above, so that the adjacent electrode fingers 17 and 18 come into contact with each other to input and output. And ground will be short-circuited. Therefore, it is general that the electrode finger is configured as one electrode finger having a width of λ / 2 like the electrode finger 16 shown in FIG. Therefore, in the present specification, when describing the electrode pattern that provides the maximum bandwidth, the center distance L between the electrode fingers is not expressed as λ / 4, but as shown in FIG. The distance between the centers of the electrode fingers adjacent to each other is set as 5 / 4λ.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、図5
(a)に示すような従来の1次−3次DMSフィルタで
は、フィルタのインピーダンスは各IDTの対数、電極
指幅等の構成に対応して必然的に値が決まるため、通過
域のカットオフ特性を改善し阻止減衰量を増大すべく複
数のDMSフィルタを多段縦続接続する場合に、段間に
発生する容量又はインダクタンスに応じて、ほぼ同等値
の容量又はインダクタンスを付加する必要が生じる。こ
れは既に良く知られた事項であるので説明は省略する。
このため、従来この結合容量あるいはインダクタンスを
フィルタと同一基板上に形成するかまたは、外部に個別
部品として付加する必要があるためにフィルタの形状が
大きくなり、1次−3次DMSフィルタを小型化が要求
される携帯無線機等に搭載するような場合に問題となっ
ていた。本発明は上記問題及び課題を解決するためにな
されたものであり、上述した段間の結合容量あるいはイ
ンダクタンスを不要とすることによって小型化を可能と
した1次−3次DMSフィルタを提供することを目的と
する。
However, FIG.
In a conventional primary-tertiary DMS filter as shown in (a), the impedance of the filter is inevitably determined in accordance with the configuration of the logarithm of each IDT, the electrode finger width, and the like. When a plurality of DMS filters are connected in cascade in order to improve the characteristics and increase the amount of blocking attenuation, it is necessary to add a capacitance or an inductance having substantially the same value according to the capacitance or the inductance generated between the stages. Since this is a well-known matter, the description is omitted.
For this reason, conventionally, it is necessary to form the coupling capacitance or inductance on the same substrate as the filter or to add it as an individual component to the outside, so that the shape of the filter becomes large and the primary-tertiary DMS filter is reduced in size. This has been a problem when it is mounted on a portable wireless device or the like that requires the above. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems and problems, and it is an object of the present invention to provide a first-to-third-order DMS filter which can be downsized by eliminating the above-mentioned coupling capacitance or inductance between stages. With the goal.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に本発明の請求項1記載の発明は、圧電基板上に3個の
IDTとその両側に配置した2個の反射器とからなる1
次−3次縦結合二重モードSAWフィルタを多段縦続接
続した多段縦続接続型縦結合型二重モードSAWフィル
タにおいて、前記3個のIDTのうち両側のIDTの対
数を互いに異ならしめ段間インピーダンスの容量換算値
をほぼ0とすると共に中央に位置するIDT端部と前記
両側のIDT夫々の端部との間隔の一方をほぼ5λ/4
とし他方をこれと異ならせることにより通過帯域内のリ
ップルを低減したことを特徴とする多段縦続接続型1次
−3次縦結合二重モードSAWフィルタである。
According to a first aspect of the present invention, there is provided a piezoelectric device comprising three IDTs on a piezoelectric substrate and two reflectors disposed on both sides thereof.
In a multi-stage cascade-connected vertical-coupling double-mode SAW filter in which a next-third-order vertical-coupling double-mode SAW filter is cascaded in multiple stages, the logarithms of the IDTs on both sides of the three IDTs are made different from each other, and the impedance between the stages is changed. The capacitance conversion value is set to approximately 0, and one of the intervals between the center end of the IDT and the ends of the IDTs on both sides is set to approximately 5λ / 4.
A multi-stage cascaded first-third-order longitudinally-coupled dual-mode SAW filter characterized in that ripples in the pass band are reduced by making the other different from this.

【0007】[0007]

【発明の実施の形態】以下本発明を図面に示した実施の
形態に基づいて詳細に説明する。図1(a)は本発明に
係る二重モードSAWフィルタの一実施例を示す模式的
電極パターンであって、圧電基板1の主面上に3個のI
DT2、3、4と、その両側に反射器5、5を表面波の
伝搬方向に沿って配設することにより、表面波の伝搬方
向に沿った1次と3次のモードの弾性波を励起し、該2
つのモードを利用した1次−3次DMSフィルタを構成
するが、その際本発明の特徴は中央IDT2の両側のI
DT3、4を非対称、即ち電極指対数を異ならせること
にある。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on an embodiment shown in the drawings. FIG. 1A is a schematic electrode pattern showing one embodiment of a dual mode SAW filter according to the present invention.
By disposing the reflectors 5, 5 on both sides of the DTs 2, 3, and 4 along the propagation direction of the surface wave, the first-order and third-order modes of the elastic waves along the propagation direction of the surface wave are excited. And said 2
A first-third-order DMS filter using two modes is constructed, and the feature of the present invention is that the I-D filters on both sides of the central IDT 2 are used.
DT3 and DT4 are asymmetric, that is, the number of electrode finger pairs is made different.

【0008】図2は本発明の一実施例に於ける特性の測
定例を示す図である。即ち、この例では圧電基板として
36°Y−X LiTaO3を用い、周波数F0 =11
0.592MHz、通過帯域幅B=2MHzの1次−3
次DMSフィルタに、中央IDT2を42.5対、ID
T3を23.5対、反射器5、5の本数をそれぞれ30
本、中央のIDT2の端部とIDT3の端部との間隔G
1を5λ/4、中央IDT2の端部とIDT4の端部と
の間隔G2を9λ/10に固定する。更にIDT4の対
数をパラメータとして、二段縦続接続1次−3次DMS
フィルタの終端インピーダンスの抵抗分R0 、リアクタ
ンス分X0 と多段縦続接続したときの段間インピーダン
スZcをシミュレーションによって求めると同図2に示
す結果が得られる。なお、 Zcはインピーダンスを容
量値〔pF〕に換算した値で示した。 図2から明らか
なように終端インピーダンスの抵抗分R0[Ω]、リア
クタンス分X0の容量値〔pF〕は共にIDT4の対数
が少なくなるに従い減少していることがわかる。一方、
段間のインピーダンスZcはIDT4の対数を減少させ
るに従い値が減少して零となり、さらには負号の容量即
ち、インダクタンスに変化してことが分かる。
FIG. 2 is a diagram showing a measurement example of characteristics in one embodiment of the present invention. That is, in this example, 36 ° YX LiTaO3 is used as the piezoelectric substrate, and the frequency F0 = 11.
0.592 MHz, passband B = primary-3 with 2 MHz
In the next DMS filter, 42.5 pairs of central IDT2, ID
23.5 pairs of T3 and 30 reflectors 5 and 5
The distance G between the end of the book, the center IDT2 and the end of the IDT3
1 is fixed to 5λ / 4, and the distance G2 between the end of the central IDT 2 and the end of the IDT 4 is fixed to 9λ / 10. Further, using the logarithm of the IDT 4 as a parameter, a two-stage cascaded primary-tertiary DMS
When the resistance R0 and the reactance X0 of the terminal impedance of the filter and the interstage impedance Zc when cascaded in multiple stages are obtained by simulation, the result shown in FIG. 2 is obtained. Note that Zc is a value obtained by converting the impedance into a capacitance value [pF]. As is clear from FIG. 2, the resistance value R0 [Ω] of the termination impedance and the capacitance value [pF] of the reactance component X0 both decrease as the logarithm of the IDT 4 decreases. on the other hand,
It can be seen that the impedance Zc between the stages decreases to zero as the logarithm of the IDT 4 decreases, and further changes to a negative capacitance, that is, an inductance.

【0009】即ち、図2に示した段間インピーダンスZ
cの容量換算値が零となるIDT4の対数を採用すれ
ば、二段縦続接続1次−3次DMSフィルタの段間容量
を無くすことができる。従来、同一圧電基板上に各種電
極を配置することにより形成していた段間容量が不要と
なり、圧電基板の寸法を大幅に小さくすることが可能と
なる。一般的にはIDT3、4の電極指対数を互いに異
ならせると通過域内の高周波部にリップルが発生し振幅
特性、位相特性が歪むため従来、このような構成とする
ことは非常識であると考えられていた。
That is, the interstage impedance Z shown in FIG.
If the logarithm of the IDT 4 in which the capacitance conversion value of c becomes zero is used, the interstage capacitance of the two-stage cascaded primary-tertiary DMS filter can be eliminated. Conventionally, the inter-stage capacitance formed by arranging various electrodes on the same piezoelectric substrate becomes unnecessary, and the size of the piezoelectric substrate can be significantly reduced. Generally, if the number of electrode fingers of the IDTs 3 and 4 is different from each other, a ripple is generated in a high-frequency portion in the passband, and the amplitude characteristics and the phase characteristics are distorted. Had been.

【0010】ところが前記した通過域内の高周波部のリ
ップルは、図1の中央IDT2の端部とIDT3の端部
の間隔G1と中央IDT2の端部とIDT4の端部の間
隔G2を適切に設定することにより、通過域から減衰域
にシフトすることが可能であることを見い出した。図3
は本発明を実施した諸フィルタの特性を示す図であっ
て、圧電基板に36°Y−X LiTaO3を用い、周
波数F0 =110.592MHz、通過帯域幅B=2M
Hzの1次−3次DMSフィルタ実現した際の通過域と
減衰域の特性を示した図である。即ち、図3(a)は中
央IDT2を42.5対、両側IDT3、4を23.5
対、反射器5、5をそれぞれ30本、G1を5λ/4、
G2を9λ/10としたときの濾波特性図である。以下
同図(b)、(c)について図3(a)のデータと異な
るパラメータのみを記すと、図3(b)はIDT4の対
数を21.5対に減少させたときの濾波特性図であり、
図3(c)はIDT4の対数をさらに減らして19.5
対としたときの濾波特性図である。図3(a)〜(c)
から明らかなように中央IDT2の両側のIDT3、4
の対数を異ならしめることにより通過域のリップルが減
少し、減衰域にもほとんど悪影響は及ぼさないことが明
らかであろう。
However, the ripple of the high-frequency portion in the above-mentioned pass band appropriately sets the interval G1 between the end of the central IDT2 and the end of the IDT3 and the interval G2 between the end of the central IDT2 and the end of the IDT4 in FIG. As a result, it has been found that it is possible to shift from the pass band to the attenuation band. FIG.
FIG. 3 is a graph showing characteristics of various filters embodying the present invention, in which 36 ° YX LiTaO3 is used for a piezoelectric substrate, a frequency F0 = 1110.592 MHz, and a pass bandwidth B = 2M.
FIG. 6 is a diagram illustrating characteristics of a pass band and an attenuation band when a first-order / third-order DMS filter of Hz is realized. That is, FIG. 3 (a) shows 42.5 pairs of central IDT2 and 23.5 pairs of IDTs 3 and 4 on both sides.
Pairs, 30 reflectors 5, 5 each, G1 5λ / 4,
FIG. 6 is a diagram illustrating filtering characteristics when G2 is set to 9λ / 10. Hereinafter, only parameters different from the data of FIG. 3A will be described for FIGS. 3B and 3C. FIG. 3B is a filtering characteristic diagram when the logarithm of the IDT 4 is reduced to 21.5 pairs. Yes,
FIG. 3C shows that the logarithm of IDT4 is further reduced to 19.5.
It is a filtering characteristic figure at the time of making a pair. 3 (a) to 3 (c)
As can be seen from FIG.
It will be apparent that varying the logarithm of reduces the ripple in the passband and has little adverse effect on the attenuation region.

【0011】図4は本発明の他の実施例を示す特性図で
あって、圧電基板に36°Y−XLiTaO3を用い、
周波数F0=110.592MHz、通過帯域幅B=2
MHz、中央IDTの対数を42.5対、IDT3の対
数を23.5対、IDT4の対数を21.5対、G1=
5/4λ、G2=9λ/10、 反射器の各本数を30
本とした場合の濾波特性である。この例においても段間
容量を付加することなく所望のフィルタ特性を得ること
ができ、大幅に小型化することができた。
FIG. 4 is a characteristic diagram showing another embodiment of the present invention, wherein 36 ° Y-XLiTaO3 is used for the piezoelectric substrate, and FIG.
Frequency F0 = 110.592 MHz, pass bandwidth B = 2
MHz, 42.5 pairs of log of central IDT, 23.5 pairs of log of IDT3, 21.5 pairs of log of IDT4, G1 =
5 / 4λ, G2 = 9λ / 10, the number of each reflector is 30
This is a filtering characteristic when a book is used. Also in this example, desired filter characteristics could be obtained without adding an interstage capacitance, and the size could be significantly reduced.

【0012】上記では圧電基板にLiTaO3を用いた
場合を説明したが、他の圧電物質、例えば水晶、LiN
bO3、LBO、ランガサイト等でもよいことは言うま
でもない。
Although the case where LiTaO3 is used for the piezoelectric substrate has been described above, other piezoelectric materials such as quartz, LiN
It goes without saying that bO3, LBO, langasite and the like may be used.

【0013】[0013]

【発明の効果】本発明は、以上説明したように多段縦続
接続二重モードフィルタ1次−3次DMSフィルタにお
いて、3個のIDTのうち両側のIDTの対数を互いに
異ならしめ、電極指対数を適切な対数とすることにより
濾波特性を維持しながら、フィルタの段間インピーダン
スの容量換算値をほぼ0とすることができる。更に中央
に位置するIDT端部と前記両側のIDT夫々の端部と
の間隔の一方をほぼ5λ/4とし、他方をこれと異なら
せることにより、通過帯域内のリップルを低減したた
め、段間の結合容量が不要の多段縦続接続二重モードフ
ィルタを実現することが可能となり、小型化する上で著
しい効果を奏する。
As described above, according to the present invention, in the multistage cascade-connected double mode filter primary-third-order DMS filter, the logarithms of the IDTs on both sides of the three IDTs are made different from each other to reduce the number of electrode finger pairs. By setting an appropriate logarithm, the capacitance-converted value of the interstage impedance of the filter can be made substantially zero while maintaining the filtering characteristics. Further, one of the distances between the end of the IDT located at the center and the end of each of the IDTs on both sides is set to approximately 5λ / 4, and the other is made different from this, thereby reducing the ripple in the pass band. It is possible to realize a multi-stage cascade-connected double mode filter that does not require a coupling capacitor, which is remarkable in downsizing.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る1次−3次DMSフィルタの電極
パターンの実施の一形態例を示す図である。
FIG. 1 is a diagram showing an embodiment of an electrode pattern of a primary-tertiary DMS filter according to the present invention.

【図2】IDT3を固定しIDT4の対数を変化させた
場合の終端インピーダンス、段間の結合容量との関係を
示す図である。
FIG. 2 is a diagram showing a relationship between a termination impedance and a coupling capacitance between stages when the IDT 3 is fixed and the logarithm of the IDT 4 is changed.

【図3】(a)〜(c)はIDT4の電極指対数を変化
させた場合の濾波特性を示す図である。
FIGS. 3A to 3C are diagrams showing filtering characteristics when the number of electrode finger pairs of the IDT 4 is changed.

【図4】本発明になるIDTパターンを用いた1次−3
次DMSフィルタの濾波特性図である。
FIG. 4 shows a primary-3 using an IDT pattern according to the present invention.
It is a filtering characteristic figure of the next DMS filter.

【図5】(a)は従来の1次−3次DMSフィルタのI
DTパターンを示す図、(b)、(c)はその拡大図で
ある。
FIG. 5 (a) is a diagram showing I of a conventional first-order / third-order DMS filter.
FIGS. 3B and 3C are diagrams showing DT patterns, and FIGS.

【符号の説明】[Explanation of symbols]

1・・・圧電基板 3、4・・・IDT 3a、4a・・・電極指 5・・・反射器 G1、G2・・・電極指中心間間隔 DESCRIPTION OF SYMBOLS 1 ... Piezoelectric substrate 3, 4 ... IDT 3a, 4a ... Electrode finger 5 ... Reflector G1, G2 ... Electrode finger center distance

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 圧電基板上に3個のIDTとその両側に
配置した2個の反射器とからなる1次−3次縦結合二重
モードSAWフィルタを多段縦続接続した多段縦続接続
型縦結合型二重モードSAWフィルタにおいて、前記3
個のIDTのうち両側のIDTの対数を互いに異ならし
め段間インピーダンスの容量換算値をほぼ0とすると共
に中央に位置するIDT端部と前記両側のIDT夫々の
端部との間隔の一方をほぼ5λ/4とし他方をこれと異
ならせることにより通過帯域内のリップルを低減したこ
とを特徴とする多段縦続接続型1次−3次縦結合二重モ
ードSAWフィルタ。
1. A cascaded multi-stage cascaded primary-tertiary-coupling double-mode SAW filter composed of three IDTs and two reflectors arranged on both sides of a piezoelectric substrate. In the dual-mode SAW filter,
Of the IDTs, the logarithms of the IDTs on both sides are made different from each other, the capacitance-converted value of the interstage impedance is made substantially zero, and one of the intervals between the end of the IDT located at the center and the end of each of the IDTs on both sides is made substantially equal. A multi-stage cascaded first- and third-order longitudinally-coupled dual-mode SAW filter, characterized in that ripples in a pass band are reduced by setting the wavelength to 5λ / 4 and making the other different from the above.
JP4296897A 1997-02-12 1997-02-12 Double-mode saw filter Pending JPH10224179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4296897A JPH10224179A (en) 1997-02-12 1997-02-12 Double-mode saw filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4296897A JPH10224179A (en) 1997-02-12 1997-02-12 Double-mode saw filter

Publications (1)

Publication Number Publication Date
JPH10224179A true JPH10224179A (en) 1998-08-21

Family

ID=12650849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4296897A Pending JPH10224179A (en) 1997-02-12 1997-02-12 Double-mode saw filter

Country Status (1)

Country Link
JP (1) JPH10224179A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7019435B2 (en) 2003-03-31 2006-03-28 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7019435B2 (en) 2003-03-31 2006-03-28 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device

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