JPH10223544A - Semiconductor manufacturing apparatus and method of feeding gas therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus having a reactive gas feed port and method of feeding a reactive gas which prevents the gas from being reliquefied and reaction byproducts from depositing and reducing the particle. SOLUTION: A reactive gas feed port 20 made of metal comprises reactive gas feed pipes 21, 22, pre-chambers 23, 24 composed of thin and long holes, gas feed holes 25, 26 and a heating medium passage 27, in which a thermostatic oil flows to heat the entire port 20 and hence the walls of the pre-chambers 23, 24 and the feed holes 25, 26 and an upper wall 17 of a pre-reaction chamber 12. Passing through the pre-chambers 23, 24 and the feed holes 25, 26, the reactive gas is preheated, then fed into a reaction chamber 12 like a shower and mixed therein and flows into a reaction tube 13.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor manufacturing apparatus and a gas supply method therefor, and more particularly to a semiconductor manufacturing apparatus having a gas supply port and a gas supply method therefor.

[0002]

2. Description of the Related Art Conventionally, as shown in FIG. 3, a plurality of types of reaction gases A and B are supplied from gas introduction holes 25 and 26 through reaction gas introduction pipes 21 and 22 and preparatory chambers 23 and 24, respectively. However, the temperature was not adjusted in the preliminary chambers 23 and 24 where the reactant gases A and B were in contact and the gas contact portions of the gas introduction holes 25 and 26, respectively. Chambers 23 and 24 and gas inlet 2
There were problems such as reliquefaction of the reaction gas in 5, 26, (ii) adhesion of reaction by-products, and (iii) generation of particles based thereon.

[0003]

SUMMARY OF THE INVENTION Accordingly, it is a main object of the present invention to solve the problems of the prior art and to prevent the reliquefaction of a reaction gas, suppress the adhesion of reaction by-products, and reduce the number of particles. It is an object of the present invention to provide a semiconductor manufacturing apparatus provided with a reaction gas supply port capable of supplying the gas and a gas supply method thereof.

[0004]

According to a first aspect of the present invention, there is provided a semiconductor manufacturing apparatus comprising a reaction gas supply port provided with a passage through which a reaction gas flows and provided with a heating means. .

[0005] By providing the heating means as described above,
The reaction gas supply port can be heated to heat the wall surface of the passage through which the reaction gas flows, thereby preventing the reaction gas from being reliquefied, adhering reaction by-products, and generating particles based on the reaction liquid.

Further, by heating the reaction gas supply port, the wall surface of the reaction chamber provided in contact therewith is also heated, so that the adhesion of reaction by-products can be suppressed in the reaction chamber.

Further, by passing the reaction gas through the passage whose wall surface is heated, the reaction gas is heated in advance and then introduced into the reaction chamber, so that the temperature difference from the film formation temperature can be reduced.

[0008] As the heating means, preferably, a means for providing a heating medium flow passage in the reaction gas supply port and flowing constant-temperature oil or the like through this is preferably used.

Alternatively, it is preferable to embed a heater in the reaction gas supply port.

According to a second aspect of the present invention, in the gas supply method for supplying a plurality of types of reaction gases into a reaction chamber of a semiconductor manufacturing apparatus, the plurality of types of reaction gases are passed through passages whose wall surfaces are heated. A gas supply method is provided in which heating is performed in advance, and thereafter, each of the plurality of reaction gases is introduced into the reaction chamber in a shower shape, and the plurality of reaction gases are mixed in the reaction chamber.

As described above, by preheating the plurality of types of reaction gases by passing them through the passages whose wall surfaces are heated, reliquefaction of the reaction gas, adhesion of the reaction by-products, and generation of particles based on the reliquefaction. In addition, the temperature difference from the film formation temperature can be reduced.

[0012]

Next, an embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a partially enlarged sectional view for explaining a semiconductor manufacturing apparatus and a gas supply method thereof according to an embodiment of the present invention, and FIG. 1A is a partially enlarged sectional view of a portion A in FIG. FIG. 1B is a sectional view taken along line X1-X1 of FIG. 1A. FIG. 2 is a schematic sectional view illustrating a semiconductor manufacturing apparatus according to one embodiment of the present invention.

Referring to FIG. 2, this semiconductor manufacturing apparatus 1
Reference numeral 00 denotes a reaction tube 13, a preliminary reaction chamber 12 provided upstream of the reaction tube 13, a reaction gas supply port 20 for supplying a reaction gas to the preliminary reaction chamber 12, and an exhaust gas provided downstream of the reaction tube 13. A chamber 15, a heater 14 provided around the reaction tube 13, a transfer chamber 10 provided before the preliminary reaction chamber 12, and a gate valve 11 provided between the reaction chamber 10 and the preliminary reaction chamber 12. And The wafer 16 is loaded / unloaded into the reaction tube 13 via the transfer chamber 10. The reaction tube 13 is heated by the heater 14, and the reaction gas supply port 2 is set in a state where the wafer 16 is placed in the reaction tube 13.
0, the reaction gas flows into the reaction tube 13 and the exhaust chamber 15
In the reaction tube 13, a predetermined treatment of the wafer 16 with a reaction gas such as film formation on the wafer 16 is performed. The reaction chamber is constituted by the preliminary reaction chamber 12 and the reaction tube 13. Further, the O-ring 18 for sealing allows the space between the reaction gas supply port 20 and the preliminary reaction chamber 12 to be
The space between the preliminary reaction chamber 12 and the reaction tube 13 is sealed.

Referring to FIG. 1, a metal reaction gas supply port 20 is mounted on an upper wall 17 of the preliminary reaction chamber 12. The reaction gas supply port 20 is provided with spare chambers 23 and 24 each composed of an elongated hole extending in a direction perpendicular to the plane of the paper, and the reaction gas introduction pipes 21 and 22 are provided above the spare chambers 23 and 24, respectively. Communication, spare room 2
A plurality of gas introduction holes 25 and 26 are provided below the 3 and 24 in communication with each other. Gas inlet holes 25, 26
Communicates with a reaction gas introduction hole 19 provided in the upper wall 17 of the preliminary reaction chamber 12. Further, the reaction gas supply port 20 is provided with a heating medium flow passage 27 along the preparatory chambers 23 and 24, and the entire reaction gas supply port 20 is heated by flowing constant temperature oil or the like into the heating medium flow passage 27. , Spare chambers 23 and 24, gas introduction holes 25 and 26
And the upper wall 17 of the preliminary reaction chamber 12 can also be heated.

Two types of reaction gases A and B are introduced from reaction gas introduction pipes 21 and 22, respectively, and pass through pre-chambers 23 and 24 whose wall surfaces are heated, and thereafter, gas introduction holes 25 whose wall surfaces are heated. 26, they are preheated by passing through the respective reaction gases 26 and then introduced into the pre-reaction chamber 12 through the reaction gas introduction holes 19 in the form of a shower, respectively, and two kinds of reaction gases A and B are mixed in the pre-reaction chamber 12. After that, it flows into the reaction tube 13.

As described above, the heating medium flow passage 27 is provided,
Since the entirety of the reaction gas supply port 20 is heated by flowing constant temperature oil or the like into it, thereby heating the wall surfaces of the preliminary chambers 23 and 24 and the wall surfaces of the gas introduction holes 25 and 26, the reaction gas supply port 20 is heated. Reliquefaction of the reaction gas in the inside, adhesion of reaction by-products, and generation of particles based thereon can be prevented.

By heating the reaction gas supply port 20, the upper wall 17 of the pre-reaction chamber 12 provided in contact therewith is also heated, and the pre-reaction chamber 12 is heated.
The adhesion of the reaction by-product can be suppressed also in the inside.

Further, the reaction gas is supplied to pre-chambers 23 and 24 comprising elongated holes whose wall surfaces are heated and gas introduction holes 25 and
By passing through the reaction gas 26, the reaction gas is preliminarily heated and then introduced into the preliminary reaction chamber 12 and the reaction tube 13, so that the temperature difference from the film formation temperature can be reduced.

In some cases, a heater is embedded in the reaction gas supply port 20 instead of providing the heating medium flow passage 27 and flowing a heating medium such as constant temperature oil through the passage.

[0021]

According to the semiconductor manufacturing apparatus of the present invention, by providing the heating means, it is possible to heat the reactant gas supply port and heat the wall surface of the passage through which the reactant gas flows. Liquefaction, adhesion of reaction by-products, and generation of particles based thereon can be prevented.

Further, by heating the reaction gas supply port, the wall surface of the reaction chamber provided in contact therewith is also heated, so that the adhesion of reaction by-products can be suppressed also in the reaction chamber.

Furthermore, by passing the reaction gas through the passage whose wall surface is heated, the reaction gas is heated beforehand and introduced into the reaction chamber, so that the temperature difference from the film formation temperature can be reduced.

In the gas supply method of the present invention,
By preheating by passing a plurality of types of reaction gases through respective passages whose walls are heated, reliquefaction of the reaction gas, adhesion of reaction by-products, and generation of particles based thereon can be prevented. The temperature difference from the temperature can be reduced.

[Brief description of the drawings]

FIG. 1 is a partially enlarged cross-sectional view illustrating a semiconductor manufacturing apparatus and a gas supply method thereof according to an embodiment of the present invention.

FIG. 2 is a schematic sectional view illustrating a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 3 is a partially enlarged sectional view for explaining a conventional semiconductor manufacturing apparatus and a gas supply method thereof. FIG. 3A is a partially enlarged sectional view of a portion corresponding to the portion A in FIG.
FIG. 3B is a sectional view taken along line X3-X3 in FIG. 3A.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Transfer chamber 11 ... Gate valve 12 ... Preliminary reaction chamber 13 ... Reaction tube 14 ... Heater 15 ... Exhaust chamber 16 ... Wafer 17 ... Wall 18 ... Seal O-ring 19 ... Reaction gas introduction hole 20 ... Reaction gas supply port 21 , 22 ... reaction gas introduction pipes 23, 34 ... preliminary chambers 25, 26 ... reaction gas introduction holes 27 ... heating medium flow paths 100 ... semiconductor manufacturing equipment

Claims (2)

[Claims] 1. A semiconductor manufacturing apparatus, comprising: a reaction gas supply port provided with a passage through which a reaction gas flows and provided with a heating means. 2. A gas supply method for supplying a plurality of types of reactive gases into a reaction chamber of a semiconductor manufacturing apparatus, wherein the plurality of types of reactive gases are preliminarily heated by passing them through passages whose wall surfaces are heated. A gas supply method, wherein each of the plurality of reaction gases is introduced into the chamber in the form of a shower, and the plurality of reaction gases are mixed in the reaction chamber.