JPH10215144A - Surface acoustic wave resonator and surface acoustic wave device - Google Patents

Surface acoustic wave resonator and surface acoustic wave device

Info

Publication number
JPH10215144A
JPH10215144A JP1844597A JP1844597A JPH10215144A JP H10215144 A JPH10215144 A JP H10215144A JP 1844597 A JP1844597 A JP 1844597A JP 1844597 A JP1844597 A JP 1844597A JP H10215144 A JPH10215144 A JP H10215144A
Authority
JP
Japan
Prior art keywords
surface acoustic
acoustic wave
saw
idt
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1844597A
Other languages
Japanese (ja)
Other versions
JP3835872B2 (en
Inventor
Hokuhoa Uu
ホクホア ウー
Naoto Inose
直人 猪瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP01844597A priority Critical patent/JP3835872B2/en
Publication of JPH10215144A publication Critical patent/JPH10215144A/en
Application granted granted Critical
Publication of JP3835872B2 publication Critical patent/JP3835872B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a surface acoustic wave(SAW) resonator of low loss and a SAW device using it by suppressing the adverse effects of spuriousness. SOLUTION: By setting a distance d1 between an interdigital transducer(IDT) 14 and a reflector 151 on a left side and the distance dr between the IDT 14 and the reflector 15r on a right side to different values, frequency bands generated by the spuriousness of the left side reflector 151 and the spuriousness of the right side reflector 15r are made different and the two pieces of the independent spuriousness are attained without adding the levels of the spuriousness. Thus, conventional one piece of the spuriousness is dispersed to the two pieces of the spuriousness of a size about the half of it for instance.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、弾性表面波共振子
とこれを用いて構成した共振器型弾性表面波フィルタ等
の弾性表面波装置、特にその共振器型弾性表面波フィル
タ等の構成に必要不可欠な弾性表面波共振子のスプリア
ス抑制設計方式に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave resonator and a surface acoustic wave device such as a resonator type surface acoustic wave filter formed using the same, and more particularly, to a configuration of the resonator type surface acoustic wave filter or the like. The present invention relates to an indispensable design method for spurious suppression of a surface acoustic wave resonator.

【0002】[0002]

【従来の技術】一般に、弾性表面波装置は弾性表面波
(Surface Acoustic Wave 、以下「SAW」という)を
励振するためのすだれ状トランスデューサ(Interdigit
al Transducer 、以下「IDT」という)を有し、この
IDTを加工することによってSAW装置にいろいろな
特性や機能をもたせることができる。従来、SAW装置
といえば主にSAWフィルタを指すことが多く、そして
このSAWフィルタの中では多電極型SAWフィルタが
主として用いられていた。近年、多電極型SAWフィル
タの他に共振器型SAWフィルタの研究開発も盛んにな
り、SAWフィルタといえば必ずしも多電極型SAWフ
ィルタを意味しなくなってきている。
2. Description of the Related Art Generally, a surface acoustic wave device is an interdigitated transducer (Interdigit) for exciting a surface acoustic wave (hereinafter, referred to as "SAW").
al Transducer (hereinafter, referred to as “IDT”), and by processing this IDT, a SAW device can have various characteristics and functions. Conventionally, SAW devices are often mainly referred to as SAW filters, and among these SAW filters, multi-electrode SAW filters have been mainly used. In recent years, research and development of a resonator type SAW filter in addition to a multi-electrode type SAW filter have been actively conducted, and the term “SAW filter” does not necessarily mean a multi-electrode type SAW filter.

【0003】図2は、従来の一般的なSAW共振子の平
面図である。このSAW共振子は、圧電基板1を有して
いる。圧電基板1上には、入力端子2と、出力端子3
と、アルミニウム薄膜等からなる複数の電極指を有する
SAW励振用IDT4と、該IDT4の左右から漏洩し
たSAWを該IDT4に戻すために音響的に反射するア
ルミニウム薄膜等からなる複数の電極指を有する左側の
反射器5l 及び右側の反射器5r と、アースのボンディ
ングパッド6とが形成されている。このSAW共振子
は、構造上、入力側と出力側が対称になっているので、
入力端子2を出力端子に、出力端子3を入力端子にして
もよい。通常、隣接しているIDT4の電極指と、反射
器5l ,5r の電極指のピッチ(即ち、隣接している2
本の電極指中心間隔)は、該IDT4の電極指のピッチ
と同じく、励振SAWの半波長になるように設計され
る。一方、ボンディングパッド6もIDT4と同じ厚み
なので、該IDT4の膜厚が4000Å以上あれば、そ
の上に金のボンディングパッドを設ける必要なく、その
ままボンディング可能である。反射器5l ,5r はID
T4と同時に形成されるので、該反射器5l ,5r の材
質(Al)と膜厚はIDT4と同じであるが、用途によ
って不要になる場合もある。同様に、IDT4にも使用
目的によって多少のバリエーションがある。
FIG. 2 is a plan view of a conventional general SAW resonator. This SAW resonator has a piezoelectric substrate 1. On the piezoelectric substrate 1, an input terminal 2 and an output terminal 3
And an IDT 4 for SAW excitation having a plurality of electrode fingers made of an aluminum thin film or the like, and a plurality of electrode fingers made of an aluminum thin film or the like acoustically reflected to return the SAW leaked from the left and right sides of the IDT 4 to the IDT 4. A left reflector 51 and a right reflector 5r and a ground bonding pad 6 are formed. Since the input side and the output side of this SAW resonator are symmetrically structured,
The input terminal 2 may be an output terminal and the output terminal 3 may be an input terminal. Usually, the pitch between the electrode fingers of the adjacent IDT 4 and the electrode fingers of the reflectors 5 l and 5 r (that is, two adjacent electrode fingers).
The electrode finger center distance is designed to be half the wavelength of the excitation SAW, similarly to the pitch of the electrode fingers of the IDT 4. On the other hand, since the bonding pad 6 has the same thickness as the IDT 4, if the thickness of the IDT 4 is 4000 ° or more, it is possible to perform bonding without providing a gold bonding pad thereon. Reflectors 5 l and 5 r are ID
Since the reflectors 5 l and 5 r are formed at the same time as T4, the material (Al) and the film thickness of the reflectors 5 l and 5 r are the same as those of the IDT 4. Similarly, the IDT 4 has some variations depending on the purpose of use.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、従来の
SAW共振子とこれを用いたSAW装置では、次のよう
な問題があり、これを解決することが困難であった。反
射器5l ,5r がない場合とある場合では、SAW共振
子の特性が大きく異なってくる。即ち、反射器5l ,5
r がない場合では、IDT4の左右から漏洩したSAW
はそのまま損失となり、SAW共振子の伝送損失が大き
くなる。逆に、反射器5l ,5r がある場合では、ID
T4の左右に漏洩したSAWのエネルギーの大部分が該
反射器5l ,5r に反射されてIDT4に戻るため、伝
送損失が低いが、反射作用によって特性にスプリアスが
発生し、SAW共振子の利用範囲を狭めてしまう。図3
(a),(b)は従来の課題を説明するための図であっ
て反射器5l ,5r をもたないSAW共振子の特性図で
あり、同図(a)はインピーダンス特性図、及び同図
(b)は挿入損失特性図である。各特性には、測定回路
の略図も示されている。図3(a)のインピーダンス特
性と図3(b)のスルー状態の挿入損失特性は、一般的
なLC共振子のインピーダンス特性と挿入損失特性と同
じ振る舞いをするが、反射器5l ,5r がないので、I
DT4の左右に漏洩するSAWのエネルギーが損失とな
り、伝送損失を大きくしてしまう。
However, the conventional SAW resonator and the SAW device using the same have the following problems, which have been difficult to solve. The characteristics of the SAW resonator greatly differ depending on whether the reflectors 5 l and 5 r are not provided. That is, the reflectors 5 l and 5
If there is no r , the SAW leaked from the left and right of IDT4
Becomes a loss as it is, and the transmission loss of the SAW resonator increases. Conversely, if there are reflectors 5 l and 5 r , the ID
Most of the energy of the SAW leaked to the left and right of T4 is reflected by the reflectors 5 l and 5 r and returns to the IDT 4, so that the transmission loss is low. It narrows the range of use. FIG.
(A), (b) is a diagram for explaining a conventional problem, is a characteristic diagram of a SAW resonator having no reflectors 5 l , 5 r , FIG. (B) is an insertion loss characteristic diagram. Each characteristic also shows a schematic diagram of the measurement circuit. The impedance characteristics of FIG. 3A and the insertion loss characteristics in the through state of FIG. 3B behave the same as the impedance characteristics and insertion loss characteristics of a general LC resonator, but the reflectors 5 l and 5 r Because there is no
The energy of the SAW leaking to the left and right of the DT4 becomes a loss, which increases the transmission loss.

【0005】図4(a),(b)は従来の課題を説明す
るための図であって反射器5l ,5r を有するSAW共
振子の特性図であり、同図(a)はインピーダンス特性
図、及び同図(b)は挿入損失特性図である。図4
(a)のインピーダンス特性中の7aはインピーダンス
特性のスプリアスであり、さらに同図(b)の挿入損失
特性中の7bはその挿入損失特性に現われるスプリアス
である。反射器5l ,5r を有しているので、図4
(b)に示すスルー状態の伝送損失は、図3(b)に比
べて大きく改善される代わりに、中心周波数より高域に
おいてスプリアス7bが発生する。一方、SAW共振子
を用いてSAW装置の1つである共振器型SAWフィル
タを構成する場合、スプリアス7a,7bの存在は一般
的に好ましくない。即ち、利用する周波数帯域内にスプ
リアス7a,7bが存在すると、挿入損失特性にリップ
ルや吸収帯域が発生し、フィルタ特性に重大な悪影響を
与えかねない。従来、これを抑制するためには、SAW
共振子のIDT4及び反射器5l ,5r の膜厚を厚くし
たり、材料をAuのような重金属に変えたりする方法が
あるが、うまく調整できなければ、スプリアス7a,7
bの悪影響だけでなく、中心周波数の調整問題や、伝送
損失の問題等も加わってしまうため、技術的に未だ充分
に満足のゆくものが得られなかった。本発明は、前記従
来技術がもっていた課題を解決し、反射器とIDTの設
計を工夫することにより、スプリアスの悪影響を抑制
し、低損失のSAW共振子とこれを用いたSAW装置を
提供することを目的とする。
FIGS. 4A and 4B are diagrams for explaining a conventional problem, and are characteristic diagrams of a SAW resonator having reflectors 5 l and 5 r , and FIG. The characteristic diagram and the diagram (b) are the insertion loss characteristic diagrams. FIG.
7a in the impedance characteristic of (a) is a spur of the impedance characteristic, and 7b in the insertion loss characteristic of FIG. (B) is a spurious appearing in the insertion loss characteristic. Since there are reflectors 5 l and 5 r , FIG.
The transmission loss in the through state shown in (b) is greatly improved as compared with FIG. 3 (b), but spurious 7b occurs in a higher frequency range than the center frequency. On the other hand, when a resonator type SAW filter, which is one of the SAW devices, is configured using a SAW resonator, the presence of spurious components 7a and 7b is generally not preferable. That is, if the spurious components 7a and 7b exist in the frequency band to be used, a ripple or an absorption band occurs in the insertion loss characteristic, which may have a serious adverse effect on the filter characteristic. Conventionally, to suppress this, SAW
There are methods of increasing the film thickness of the IDT 4 of the resonator and the reflectors 5 l and 5 r and changing the material to a heavy metal such as Au.
Not only the adverse effect of b but also the problem of adjustment of the center frequency, the problem of transmission loss, etc. are added, so that a technically satisfactory one cannot be obtained. The present invention solves the problems of the prior art and provides a low-loss SAW resonator and a SAW device using the same by suppressing the adverse effect of spurious by devising the design of the reflector and the IDT. The purpose is to:

【0006】[0006]

【課題を解決するための手段】図5は、本発明の原理を
説明するためのSAW共振子のIDTと反射器付近の拡
大図である。本発明のSAW共振子では、複数の電極指
を有するIDT14を備え、このIDT14の両側に複
数の電極指を有する反射器15が設けられている。通
常、IDT14のピッチ及び隣接している反射器15と
該IDT14の電極指同士の中心間の距離dは、励振S
AWの波長λの半波長(=λ/2)に等しいように設計
される。この場合、スプリアスがある周波数帯域内に発
生するが、距離dの値を変えるとスプリアスの発生する
周波数帯域もこれに従って変わり、距離dが半波長増減
するごとにスプリアスがもとの周波数帯域に戻る。理論
的及び実験的に確認したところ、距離dをλ/2から増
加させるとスプリアスが周波数の低域に移動し、距離d
の増加分がλ/2に達するとスプリアスがもとの位置に
戻る。そのため、距離dの値がスプリアスの発生する周
波数帯域を決める重要な要因と言える。以下、断りがな
い限り、次の条件が常に成立しているとする。 λ/2≦d<λ 一方、SAW共振子の左右の反射器のうちの片側(1
5)だけを残しても、スプリアスが従来の周波数帯域に
発生するが、レベルは例えばインピーダンス特性内のル
ープの大きさが従来のスプリアスループの半分であるこ
とがわかった。そのため、左右の反射器の反射で発生す
るスプリアスが完全に独立していると言える。
FIG. 5 is an enlarged view of the vicinity of an IDT and a reflector of a SAW resonator for explaining the principle of the present invention. The SAW resonator according to the present invention includes an IDT 14 having a plurality of electrode fingers, and a reflector 15 having a plurality of electrode fingers is provided on both sides of the IDT 14. Usually, the pitch of the IDT 14 and the distance d between the center of the adjacent reflector 15 and the center of the electrode fingers of the IDT 14 are determined by the excitation S
It is designed to be equal to a half wavelength (= λ / 2) of the wavelength λ of the AW. In this case, spurs occur in a certain frequency band, but if the value of the distance d is changed, the frequency band in which the spurious occurs changes accordingly, and each time the distance d increases or decreases by half a wavelength, the spurious returns to the original frequency band. . It has been confirmed theoretically and experimentally that when the distance d is increased from λ / 2, the spurious moves to the lower frequency range, and the distance d
When the amount of increase reaches λ / 2, the spurious returns to the original position. Therefore, it can be said that the value of the distance d is an important factor that determines the frequency band in which spurious occurs. Hereinafter, it is assumed that the following conditions are always satisfied unless otherwise specified. λ / 2 ≦ d <λ On the other hand, one of the left and right reflectors of the SAW resonator (1
Even if only 5) is left, spurious is generated in the conventional frequency band, but the level is found, for example, that the size of the loop in the impedance characteristic is half that of the conventional spurious loop. Therefore, it can be said that spurs generated by reflections of the left and right reflectors are completely independent.

【0007】以上のような原理に基づき、本発明のうち
の請求項1の発明では、SAW共振子において、SAW
を励振するIDTと、前記IDTの左側に距離dl (但
し、λ/2≦dl <λ、λはSAW波長)隔てて配置さ
れ、前記SAWを該IDT側へ反射させる左側の反射器
と、前記IDTの右側に距離dr (但し、λ/2≦dr
<λ)隔てて配置され、前記SAWを該IDT側へ反射
させる右側の反射器とが、圧電基板上に形成されてい
る。そして、前記距離dl とdr を、前記左側及び右側
の反射器の反射作用によって発生するスプリアスを所定
の周波数帯域でかつそのレベルを低く抑えた2個のスプ
リアスに分散しうる異なる値に設定している。このよう
な構成を採用することにより、高周波信号がIDTの入
力側に入力されると、該IDTに高周波電圧が発生し、
この電極指下の圧電基板の表面が歪み、入力された高周
波信号と同じ周波数のSAWが励振される。励振したS
AWは、IDTの左右に伝搬し、該IDTの外側に向か
っていくが、左右の反射器に達するとそこで反射が起こ
り、IDTの両側から反射されたSAWが該IDTの中
心に向かうようになる。この結果、両反射器間の領域に
SAWの定在波が発生し、IDTの出力側から高周波信
号が出力される。この際、反射器からの反射波があるの
で、スプリアスが発生する。ところが、この請求項1の
発明では、SAWを励振するIDTとこれを挟む左側と
右側の反射器との距離dl ,dr を異なる値に設定して
いるので、従来の1個のスプリアスが、例えばこれより
半分の大きさ程度の2個のスプリアスに分散される。
According to the first aspect of the present invention, based on the above principle, the SAW resonator has a SAW resonator.
And a left reflector that is disposed on the left side of the IDT at a distance d l (where λ / 2 ≦ d l <λ, λ is a SAW wavelength) and reflects the SAW to the IDT side. , A distance d r (where λ / 2 ≦ d r) on the right side of the IDT.
<Λ) and a right reflector for reflecting the SAW to the IDT side are formed on the piezoelectric substrate. Then, setting the distance d l and d r, a different value may be dispersed in two spurious spurious generated suppressed low predetermined frequency band at and their levels by the reflective action of the left and right reflectors doing. By adopting such a configuration, when a high-frequency signal is input to the input side of the IDT, a high-frequency voltage is generated in the IDT,
The surface of the piezoelectric substrate below the electrode finger is distorted, and a SAW having the same frequency as the input high-frequency signal is excited. Excited S
The AW propagates to the left and right of the IDT and goes to the outside of the IDT, but when reaching the left and right reflectors, reflection occurs there, and the SAW reflected from both sides of the IDT goes to the center of the IDT. . As a result, a SAW standing wave is generated in a region between the two reflectors, and a high-frequency signal is output from the output side of the IDT. At this time, since there is a reflected wave from the reflector, spurious is generated. However, in the invention of claim 1, the distance between the IDT and the left and right reflectors sandwiching the exciting the SAW d l, since the set of d r to a different value, the conventional one spur For example, it is distributed to two spurious components having a size about half that of this.

【0008】請求項2の発明では、SAW共振子におい
て、SAWを励振するIDTと、複数段に分割されて前
記IDTの左側にそれぞれ距離dlm(但し、λ/2≦d
lm<λ、λはSAW波長、mは分割段数であって正の整
数)隔てて配置され、前記SAWを該IDT側へ反射さ
せる左側の反射器と、複数段に分割されて前記IDTの
右側にそれぞれ距離drn(但し、λ/2≦drn<λ、n
は分割段数であって正の整数)隔てて配置され、前記S
AWを該IDT側へ反射させる右側の反射器とが、圧電
基板上に形成されている。そして、前記距離dlm,drn
のすべてを、前記左側及び右側の反射器の反射作用によ
って発生するスプリアスを所定の周波数帯域でかつその
レベルを低く抑えたm+n個のスプリアスに分散しうる
異なる値に設定している。このような構成を採用するこ
とにより、高周波信号がIDTの入力側に入力される
と、該IDT下の圧電基板の表面が歪んで入力された高
周波信号と同じ周波数のSAWが励振する。励振したS
AWは、左右の反射器によって反射され、両反射器間の
領域にSAWの定在波が発生し、IDTの出力側から高
周波信号が出力される。この際、左右の反射器からの反
射波があるので、スプリアスが発生する。ところが、こ
の請求項2の発明では、各左右の反射器を必要に応じて
複数段に分割し、各段とIDTとの距離dlm,drnを様
々な値に設定しているので、従来の1個のスプリアスが
左右の反射器の分割段数に相当する数の小さなスプリア
スに分散される。
According to a second aspect of the present invention, in the SAW resonator, the IDT for exciting the SAW is divided into a plurality of stages and distances d lm (where λ / 2 ≦ d
lm <λ, where λ is the SAW wavelength, m is the number of division stages and m is a positive integer), and the left reflector reflects the SAW to the IDT side; To the distance d rn (where λ / 2 ≦ d rn <λ, n
Is the number of division stages and is a positive integer)
The right reflector for reflecting the AW to the IDT side is formed on the piezoelectric substrate. Then, the distances d lm and d rn
Are set to different values that can disperse the spurious generated by the reflection action of the left and right reflectors into m + n spurs in a predetermined frequency band and at a low level. By adopting such a configuration, when a high-frequency signal is input to the input side of the IDT, the surface of the piezoelectric substrate under the IDT is distorted, and a SAW having the same frequency as the input high-frequency signal is excited. Excited S
The AW is reflected by the left and right reflectors, a SAW standing wave is generated in a region between the two reflectors, and a high-frequency signal is output from the output side of the IDT. At this time, since there are reflected waves from the left and right reflectors, spurious is generated. However, in the invention of claim 2, each of the left and right reflectors is divided into a plurality of stages as necessary, and the distances d lm and d rn between each stage and the IDT are set to various values. Is distributed to a small number of spurious components corresponding to the number of divided stages of the left and right reflectors.

【0009】請求項3の発明では、請求項1または2の
SAW共振子を用いてフィルタ等のSAW装置を構成し
ている。このような構成のSAW装置では、入力信号が
入力されると、この入力信号の所定帯域がろ波されて出
力される。この際、SAW装置を構成するSAW共振子
で発生するスプリアスが2個あるいは複数個の弱いスプ
リアスに分散され、さらにこれらのスプリアスが不要な
周波数帯域に導き出される。
According to a third aspect of the present invention, a SAW device such as a filter is configured using the SAW resonator according to the first or second aspect. In the SAW device having such a configuration, when an input signal is input, a predetermined band of the input signal is filtered and output. At this time, spurious components generated in the SAW resonator constituting the SAW device are dispersed into two or more weak spurious components, and these spurious components are led to unnecessary frequency bands.

【0010】[0010]

【発明の実施の形態】第1の実施形態 本発明の第1の実施形態であるSAW共振子の(1)構
成、(2)動作、及び(3)利点を説明する。 (1) 構成 図1は、本発明の第1の実施形態を示すSAW共振子の
平面図である。このSAW共振子は、従来の図2と同様
に、圧電基板11を有し、この圧電基板11上に、入力
端子12と、出力端子13と、複数の電極指を有する励
振用IDT14と、SAWをIDT14に反射するため
の複数の電極指を有する左側の反射器15l 及び右側の
反射器15r と、アースのボンディングパッド16とが
形成されている。入力端子12及び出力端子13は、I
DT14に接続されているが、構造上、入力端子12を
出力端子に、出力端子13を入力端子にしてもよい。I
DT14、左側の反射器15l 、及び右側の反射器15
r は、ボンディングパッド16で囲まれており、これら
のIDT14、反射器15l ,15r 及びボンディング
パッド16が、例えば膜厚が4000Å以上のAl等の
薄膜で形成されている。本実施形態のSWA共振子の構
成は、基本的には従来のものと同じであるが、従来と異
なる点は、左側の反射器15l とIDT14との距離d
l と、右側の反射器15r とIDT14との距離dr
が、異なる値に設定されていることである。前述したよ
うに、各反射器15l ,15r の反射で発生するスプリ
アスは互いに独立しているので、例えば、左側の距離d
l をλ/2+λ/8とし、右側の距離dr を従来と同一
の距離に設定する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment (1) The configuration, (2) operation, and (3) advantages of a SAW resonator according to a first embodiment of the present invention will be described. (1) Configuration FIG. 1 is a plan view of a SAW resonator according to a first embodiment of the present invention. This SAW resonator has a piezoelectric substrate 11, as in the conventional FIG. 2, and on this piezoelectric substrate 11, an input terminal 12, an output terminal 13, an excitation IDT 14 having a plurality of electrode fingers, and a SAW and reflectors 15 l and right reflectors 15 r of the left having a plurality of electrode fingers for reflecting the IDT 14, are formed and the bonding pad 16 of the ground. The input terminal 12 and the output terminal 13
Although connected to the DT 14, the input terminal 12 may be an output terminal and the output terminal 13 may be an input terminal due to its structure. I
DT14, left reflectors 15 l, and right reflectors 15
r is surrounded by a bonding pad 16, and the IDT 14, the reflectors 15 l and 15 r, and the bonding pad 16 are formed of a thin film of, for example, Al having a thickness of 4000 ° or more. The configuration of the SWA resonator of this embodiment is basically the same as the conventional one, but differs from the conventional one in that the distance d between the left reflector 15 l and the IDT 14 is d.
l and the distance d r between the right reflector 15 r and the IDT 14 are set to different values. As described above, the spurs generated by the reflections of the reflectors 15 l and 15 r are independent of each other.
Let l be λ / 2 + λ / 8 and set the right-hand distance dr to the same distance as in the prior art.

【0011】(2) 動作 例えば、数MHz以上の高周波信号が入力端子12(ま
たは出力端子13)に入力されると、この入力端子12
と電気的に接続するIDT14の電極指に高周波電圧が
かかる。高周波電圧がかかると、隣接する出力端子13
(または入力端子12)と電気的に接続するIDT14
の電極指に、誘導的に高周波電圧が発生するが、位相的
に遅れているため、入力端子12及び出力端子13間に
電位差が生じる結果になる。これにより、IDT14の
電極指下の圧電基板11の表面が歪み、入力された高周
波信号と同じ周波数のSAWが励振する。励振したSA
Wは、IDT14の左右に伝搬し、該IDT14の外側
に向かって行くが、左右の反射器15l ,15r に達す
ると、ここで反射が起こり、IDT14の両側から反射
されたSAWが該IDT14の中心に向かうようにな
る。この結果、両反射器15l ,15r 間の領域にSA
Wの定在波が発生し、入力端子12側の電極指と出力端
子13側の電極指の結合が一層強くなり、該出力端子1
3からある帯域の高周波信号が出力される。ここでは、
反射器15l ,15r からの反射波があるので、スプリ
アスの発生は避けられないが、次のような利点がある。
(2) Operation For example, when a high frequency signal of several MHz or more is input to the input terminal 12 (or the output terminal 13), the input terminal 12
A high frequency voltage is applied to the electrode fingers of the IDT 14 that are electrically connected to the IDT 14. When a high-frequency voltage is applied, the adjacent output terminals 13
(Or input terminal 12) IDT 14 electrically connected to
Although a high-frequency voltage is inductively generated in the electrode fingers of the above, a phase difference is caused, so that a potential difference occurs between the input terminal 12 and the output terminal 13. As a result, the surface of the piezoelectric substrate 11 below the electrode finger of the IDT 14 is distorted, and a SAW having the same frequency as the input high-frequency signal is excited. Excited SA
W propagates to the left and right of the IDT 14 and goes to the outside of the IDT 14, but when it reaches the left and right reflectors 15 l and 15 r , reflection occurs here, and the SAW reflected from both sides of the IDT 14 becomes To the center of As a result, SA in the region between the two reflectors 15 l and 15 r
A standing wave of W is generated, and the coupling between the electrode finger on the input terminal 12 side and the electrode finger on the output terminal 13 side is further strengthened.
3 outputs a high-frequency signal in a certain band. here,
Since there are reflected waves from the reflectors 15 l and 15 r , spurious generation is inevitable, but there are the following advantages.

【0012】(3) 利点 例えば、距離dl とdr が等しい場合、左側の反射器1
l のスプリアスと右側の反射器15r のスプリアスが
同じ周波数帯域に発生するので、そのレベルが加算され
て1個の大きなスプリアスになる。ところが、本実施形
態では左側の距離dl と右側の距離dr が異なるため、
左側反射器15l のスプリアスと右側反射器15r のス
プリアスの発生する周波数の帯域が異なり、この結果、
それらのレベルが加算されずに2個の独立したスプリア
スになる。この状態を図6(a),(b)に示す。図6
(a),(b)は図1のSAW共振子の特性図であり、
同図(a)はインピーダンス特性図、及び同図(b)は
挿入損失特性図である。図6(a)中の17al,17ar
は、インピーダンス特性に現われるスプリアスである。
また、図6(b)中の17bl,17brは、挿入損失特性
に現われるスプリアスである。図1のような反射器15
l ,15r の配置で従来発生する1個の大きなスプリア
スが、図6(a),(b)に示すような2個の小さいス
プリアス17al,17ar,17bl,17brに分散され
る。距離dl とdr を前記のようにうまく調整すること
により、スプリアス17al,17ar,17bl,17br
発生する周波数帯域を不要な周波数帯域に導き出すこと
ができ、その上、該スプリアス17al,17ar,1
bl,17brのレベルを低く抑えることができる。
(3) Advantages For example, if the distances d l and dr are equal, the left reflector 1
Since the spur of 5 l and the spur of the right reflector 15 r occur in the same frequency band, their levels are added to one large spur. However, since the left side of the distance d l and the right distance d r is different in this embodiment,
The frequency band in which the spurious of the left reflector 15 l and the spurious of the right reflector 15 r occur is different.
The levels are not added and become two independent spurs. This state is shown in FIGS. 6 (a) and 6 (b). FIG.
(A), (b) is a characteristic diagram of the SAW resonator of FIG.
FIG. 7A is an impedance characteristic diagram, and FIG. 7B is an insertion loss characteristic diagram. 17 al and 17 ar in FIG.
Is a spurious appearing in the impedance characteristic.
Also, 17 bl and 17 br in FIG. 6B are spurious components appearing in the insertion loss characteristics. Reflector 15 as in FIG.
One large spurious conventionally generated in the arrangement of l and 15 r is distributed to two small spurious 17 al , 17 ar , 17 bl and 17 br as shown in FIGS. 6 (a) and 6 (b). . By properly adjusting the distances d l and dr as described above, the frequency band in which the spurious components 17 al , 17 ar , 17 bl , and 17 br occur can be derived to unnecessary frequency bands. 17 al , 17 ar , 1
The levels of 7 bl and 17 br can be kept low.

【0013】第2の実施形態 本発明の第2の実施形態であるSAW共振子の(1)構
成、(2)動作、及び(3)利点を説明する。 (1) 構成 図7は、本発明の第2の実施形態を示すSAW共振子の
平面図であり、第1の実施形態を示す図1中の要素と共
通の要素には共通の符号が付されている。この第2の実
施形態のSAW共振子は、基本的には第1の実施形態と
同じであるが、該第1の実施形態をさらに発展させ、図
1のIDT14の左側の反射器15l を分割(例えば、
2等分した2個の反射器15l1,15l2)すると共に、
右側の反射器15r を分割(例えば、2等分した2個の
反射器15r1,15r2)し、各部のIDT14との距離
を次のようにそれぞれ異なる値に設定している。左側の
2等分された反射器15l1,15l2とIDT14との距
離をdl1,dl2とし、右側の2等分された反射器1
r1,15r2とIDT14との距離をdr1,dr2とす
る。そして例えば、距離dl1をλ/2+(2/8)λ、
距離dl2をλ/2+(3/8)λ、距離dr1を従来と同
一のλ/2、及び距離dr2をλ/2+λ/8にそれぞれ
設定している。
Second Embodiment The (1) configuration, (2) operation, and (3) advantages of a SAW resonator according to a second embodiment of the present invention will be described. (1) Configuration FIG. 7 is a plan view of a SAW resonator according to a second embodiment of the present invention. Elements common to those in FIG. 1 according to the first embodiment are denoted by the same reference numerals. Have been. The SAW resonator according to the second embodiment is basically the same as the first embodiment. However, the first embodiment is further developed by adding a reflector 15 l on the left side of the IDT 14 in FIG. Split (for example,
Two equally divided reflectors 15 l1 , 15 l2 )
The reflector 15 r on the right side is divided (for example, two reflectors 15 r1 and 15 r2 divided into two equal parts), and the distance between each part and the IDT 14 is set to a different value as follows. The distance between the left half of the reflectors 15 l1 , 15 l2 and the IDT 14 is d l1 , d l2 , and the right half of the reflector 1
The 5 r1, 15 the distance between r2 and IDT14 and d r1, d r2. Then, for example, when the distance d l1 is λ / 2 + (2/8) λ,
The distance d l2 λ / 2 + (3/8 ) λ, is set respectively the distance d r1 conventional same lambda / 2, and the distance d r2 in λ / 2 + λ / 8.

【0014】(2) 動作 本実施形態のSAW共振子の動作原理は、第1の実施形
態の動作原理とほぼ同じなので、説明を簡略化する。高
周波信号が入力端子12に入力されると、IDT14で
SAWが励振し、この励振したSAWがIDT14の左
右に伝搬し、該IDT14までの距離dl1,dl2
r1,dr2が異なった4つの反射器15l1,15l2,1
r1,15r2に反射されてIDT14に戻る。これによ
り、従来の反射器を有するSAW共振器と同じように定
在波が発生し、出力端子13から通過帯域の信号が強く
出力される。反射器15l1,15l2,15r1,15r2
あるため、漏洩SAWエネルギーはほとんどなく、その
出力信号レベルは従来のものと同じであるが、次のよう
な利点を有している。
(2) Operation The operation principle of the SAW resonator according to the present embodiment is substantially the same as the operation principle according to the first embodiment, so that the description will be simplified. When a high-frequency signal is input to the input terminal 12, the SAW is excited by the IDT 14, and the excited SAW propagates to the left and right of the IDT 14, and the distances d l1 , d l2,.
d r1, d r2 is different four reflectors 15 l1, 15 l2, 1
The light is reflected by 5 r1 and 15 r2 and returns to the IDT 14. As a result, a standing wave is generated similarly to the SAW resonator having the conventional reflector, and a signal in the pass band is strongly output from the output terminal 13. Since there are reflectors 15 l1 , 15 l2 , 15 r1 and 15 r2, there is almost no leakage SAW energy, and the output signal level is the same as that of the conventional one, but has the following advantages.

【0015】(3) 利点 本実施形態では、IDT14の両側から漏洩したSAW
エネルギーはそれぞれの反射器15l1,15l2,1
r1,15r2に反射されて該IDT14に戻るが、それ
ぞれの反射器15l1,15l2,15r1,15r2とIDT
14との距離dl1,dl2,dr1,dr2が異なるので、4
つの反射波が生じる。漏洩したSAWエネルギーがID
T14に戻ることで、損失の面において本実施形態のS
AW共振子は従来のSAW共振子と比べて同じである。
また、各反射波は1つのスプリアスを発生させるので、
本実施形態のSAW共振子の特性には4つのスプリアス
がある。図8(a),(b)は図7のSAW共振子の特
性図を示すもので、同図(a)はインピーダンス特性
図、及び同図(b)は挿入損失特性図である。図8
(a)中の18al1 ,18al2 ,18ar1 ,18
ar2 は、反射器15l1,15l2,15r1,15r2のイン
ピーダンス特性によるスプリアスである。また、図8
(b)中の18bl1 ,18bl2 ,18br1 ,18
br2 は、反射器15l1,15l2,15r1,15r2による
挿入損失特性のスプリアスである。反射器15r1による
スプリアス18ar1 または18br1 の周波数帯域は、従
来のSAW共振子のスプリアスの周波数帯域で、反射器
15r2,15l1,15l2によるスプリアス18ar2 ,1
al1 ,18al2 または18br2 ,18bl1 ,18bl2
の周波数帯域は、従来のスプリアスの周波数帯域より低
域に移動する。このように反射器15l1,15l2,15
r1,15r2を分割すると、スプリアス18al1 ,18
al2 ,18ar1 ,18ar2 ,18bl1 ,18bl2 ,18
br1 ,18br2 も分散し、その数は分割された反射器1
l1,15l2,15r1,15r2の数と同じになるが、大
きさがその分だけ小さくなる。
(3) Advantage In this embodiment, the SAW leaked from both sides of the IDT 14
The energy is calculated for each reflector 15 l1 , 15 l2 , 1
The light is reflected by 5 r1 , 15 r2 and returns to the IDT 14, and the respective reflectors 15 l1 , 15 l2 , 15 r1 , 15 r2 and the IDT 14 are reflected.
Since the distances d.sub.11 , d.sub.l2 , d.sub.r1 , and d.sub.r2 are different from each other, 4
Two reflected waves occur. ID of leaked SAW energy
Returning to T14, the loss of S
The AW resonator is the same as the conventional SAW resonator.
Also, since each reflected wave generates one spurious,
There are four spurious characteristics in the characteristics of the SAW resonator of the present embodiment. 8A and 8B show characteristic diagrams of the SAW resonator shown in FIG. 7, wherein FIG. 8A is an impedance characteristic diagram, and FIG. 8B is an insertion loss characteristic diagram. FIG.
(A) in 18 al1, 18 al2, 18 ar1 , 18
ar2 is a spurious due to the impedance characteristics of the reflectors 15 l1 , 15 l2 , 15 r1 and 15 r2 . FIG.
18 bl1 , 18 bl2 , 18 br1 , 18 in (b)
br2 is the spurious of the insertion loss characteristic due to the reflectors 15 l1 , 15 l2 , 15 r1 and 15 r2 . The frequency band of the spurious 18 ar1 or 18 br1 by the reflector 15 r1 is the frequency band of the spurious of the conventional SAW resonator, and the spurious 18 ar2 , 1 by the reflectors 15 r2 , 15 l1 , and 15 l2.
8 al1 , 18 al2 or 18 br2 , 18 bl1 , 18 bl2
Move to a lower frequency band than the conventional spurious frequency band. Thus, the reflectors 15 l1 , 15 l2 , 15
When r1 and 15 r2 are divided, spurious 18 al1 and 18
al2 , 18 ar1 , 18 ar2 , 18 bl1 , 18 bl2 , 18
br1 and 18 br2 are also dispersed, the number of which is
The number is the same as that of 5 l1 , 15 l2 , 15 r1 , and 15 r2 , but the size is reduced accordingly.

【0016】第3の実施形態 従来のSAW共振子や上記実施形態のSAW共振子は、
水晶共振子やセラミック共振子等と同様に、図9に示す
ような集中定数等価回路図で表すことができる。この等
価回路は、直列に接続したインダクタL、キャパシタc
1 及び抵抗rと、これと並列に接続したキャパシタC0
とで構成されている。このようなSAW共振子は、共振
周波数と反共振周波数をもっており、これを用いたSA
W装置である帯域フィルタを構成する理論は古くから知
られているので、これについての詳細な説明は省略する
が、第1の実施形態である図1のSAW共振子を用いた
帯域フィルタの構成例を図10に示す。図10は、本発
明の第3の実施形態を示す4段はしご型フィルタの構成
図である。この4段はしご型フィルタは、図1のSAW
共振子を用いて構成したもので、2個の直列腕共振子2
2,24と、3個の並列腕共振子21,23,25とで
構成されている。図11(a),(b)は従来のSAW
共振子を用いて構成したはしご型フィルタと図10のは
しご型フィルタの特性図を示すもので、同図(a)は従
来のSAW共振子を用いて構成したはしご型フィルタの
挿入損失特性図、及び同図(b)は図10のはしご型フ
ィルタの挿入損失特性図である。
Third Embodiment A conventional SAW resonator and the SAW resonator of the above embodiment are:
Similar to a crystal resonator or a ceramic resonator, it can be represented by a lumped constant equivalent circuit diagram as shown in FIG. This equivalent circuit includes an inductor L and a capacitor c connected in series.
1 and a resistor r, and a capacitor C 0 connected in parallel with the resistor r.
It is composed of Such a SAW resonator has a resonance frequency and an anti-resonance frequency.
Since the theory of configuring a bandpass filter as a W device has been known for a long time, a detailed description thereof will be omitted, but the configuration of the bandpass filter using the SAW resonator of FIG. An example is shown in FIG. FIG. 10 is a configuration diagram of a four-stage ladder filter according to the third embodiment of the present invention. The four-stage ladder filter is the SAW of FIG.
And two series arm resonators 2
2, and three parallel arm resonators 21, 23, 25. FIGS. 11A and 11B show a conventional SAW.
10A and 10B show characteristic diagrams of a ladder-type filter constituted by using a resonator and the ladder-type filter of FIG. 10, and FIG. 10A shows an insertion loss characteristic diagram of a ladder-type filter constituted by using a conventional SAW resonator; 10 (b) is an insertion loss characteristic diagram of the ladder type filter of FIG.

【0017】従来、SAW共振子を用いてはしご型フィ
ルタを構成するとき、直列腕共振子の共振周波数と並列
腕共振子の反共振周波数がなるべく一致するように調整
する必要がある。例えば、このような条件が満たされれ
ば、はしご型フィルタの挿入損失特性は図11(a)の
ような特性になる。この図11(a)中の31は通過帯
域、32はスプリアスを示す。従来のはしご型フィルタ
では、挿入損失の低い周波数帯域が通過帯域31にな
り、これ以外が禁止帯域になる。また、従来の反射器を
有するSAW共振子を用いてはしご型フィルタを構成す
ると、スプリアス32も発生する。図11(a)から明
らかなように、直列腕SAW共振子が1個の大きいスプ
リアスをもっているので、はしご型フィルタも1個の大
きいスプリアス32をもつことになる。これに対し、第
1の実施形態のSAW共振子を用いて図10のようなは
しご型フィルタを構成すれば、その挿入損失特性が図1
1(b)のようになる。このはしご型フィルタでは、直
列腕共振子22,24が2個の小さいスプリアスをもっ
ているので、該はしご型フィルタも2個の小さいスプリ
アス41(ここで、2個のスプリアスを1つの名称にま
とめる)をもつことになる。このような第1の実施形態
のSAW共振子を用いることによって、従来のSAW共
振子で構成されたはしご型フィルタの悪影響の強い1個
のスプリアス32を、2個の悪影響の弱いスプリアス4
1に分散させ、さらに各反射器15l ,15r の配置の
調整で、それぞれのスプリアスを不要な周波数帯域に導
き出すことができる。
Conventionally, when a ladder filter is formed using a SAW resonator, it is necessary to adjust the resonance frequency of the series arm resonator and the anti-resonance frequency of the parallel arm resonator so as to match as much as possible. For example, if such a condition is satisfied, the insertion loss characteristic of the ladder filter becomes a characteristic as shown in FIG. In FIG. 11A, 31 indicates a pass band, and 32 indicates spurious. In the conventional ladder-type filter, the frequency band having a low insertion loss is the pass band 31, and the other band is the forbidden band. Further, when a ladder filter is formed using a SAW resonator having a conventional reflector, spurious components 32 are also generated. As is clear from FIG. 11A, since the series arm SAW resonator has one large spurious, the ladder filter also has one large spurious. On the other hand, if a ladder-type filter as shown in FIG. 10 is formed by using the SAW resonator of the first embodiment, the insertion loss characteristic of FIG.
1 (b) is obtained. In this ladder-type filter, since the series arm resonators 22 and 24 have two small spurious components, the ladder-type filter also includes two small spurious components 41 (here, the two spurious components are combined into one name). Will have. By using such a SAW resonator of the first embodiment, one spurious component 32 having a strong adverse effect of a ladder filter formed of a conventional SAW resonator can be replaced with two spurious components 4 having a weak adverse effect.
1 and by adjusting the arrangement of the reflectors 15 l , 15 r , each spurious can be led to an unnecessary frequency band.

【0018】第4の実施形態 本願発明の第4の実施形態では、第2の実施形態を示す
図7のSAW共振子を用いて図10のようなはしご型フ
ィルタを構成している。図12は、第2の実施形態を示
す図7のSAW共振子を用いて構成した本発明の第4の
実施形態のはしご型フィルタの挿入損失特性図である。
図12に示すように、直列腕共振子(図10の22,2
4に相当)が4個の小さいスプリアスをもっているの
で、本実施形態のはしご型フィルタも4個の小さいスプ
リアス51(ここで4個のスプリアスを1つの名称にま
とめる)をもつことになる。また、各スプリアス51の
大きさも、従来のSAW共振子を用いたはしご型フィル
タの1/4になり、さらに第1の実施形態のSAW共振
子を用いた第3の実施形態のはしご型フィルタの1/2
になる。このように、スプリアス51を分散させると、
スプリアスの悪影響がさらに低下し、フィルタ特性がよ
り向上する。
Fourth Embodiment In a fourth embodiment of the present invention, a ladder filter as shown in FIG. 10 is formed by using the SAW resonator shown in FIG. 7 showing the second embodiment. FIG. 12 is an insertion loss characteristic diagram of a ladder-type filter according to the fourth embodiment of the present invention, which is configured using the SAW resonator shown in FIG. 7 showing the second embodiment.
As shown in FIG. 12, the series arm resonator (22, 2 in FIG. 10)
4) have four small spurious components, the ladder-type filter of this embodiment also has four small spurious components 51 (here, the four spurious components are combined into one name). Further, the size of each spurious component 51 is 1/4 of that of the ladder filter using the conventional SAW resonator, and the size of the ladder filter of the third embodiment using the SAW resonator of the first embodiment is further reduced. 1/2
become. Thus, when the spurious 51 is dispersed,
The adverse effect of the spurious is further reduced, and the filter characteristics are further improved.

【0019】なお、本発明は上記実施形態に限定され
ず、種々の変形が可能である。例えば、上記実施形態で
は、左右の反射器15l ,15r とIDT14との距離
l ,dr を異なった値にしたり、左右の反射器1
l1,15l2,15r1,15r2をそれぞれ2等分割し、
得られた4つの反射器15l1,15l2,15r1,15r2
をIDT14からすべて異なった値の距離dl1,dl2
r1,dr2に配置したりしているが、これらの反射器の
分割の仕方や配置の仕方は図示のものに限定されず、種
々の変形が可能である。また、これらのSAW共振子を
用いて構成したSAW装置は、図10のような4段はし
ご型フィルタに限定されず、他の構成の装置であっても
よい。
Note that the present invention is not limited to the above embodiment, and various modifications are possible. For example, in the above embodiment, the distances d l and dr between the left and right reflectors 15 l and 15 r and the IDT 14 are set to different values, or the left and right reflectors 1 l and 15 r are different.
5 l1 , 15 l2 , 15 r1 , 15 r2 are each divided into two equal parts,
The obtained four reflectors 15 l1 , 15 l2 , 15 r1 , 15 r2
From the IDT 14 are distances d l1 , d l2 ,
Although they are arranged at dr1 and dr2 , the way of dividing and arranging these reflectors is not limited to the illustrated one, and various modifications are possible. Further, the SAW device configured using these SAW resonators is not limited to the four-stage ladder filter as shown in FIG. 10, but may be a device having another configuration.

【0020】[0020]

【発明の効果】以上詳細に説明したように、請求項1の
発明によれば、SAWを励振するIDTとこれを挟む左
右の反射器との距離dl とdr を異なる値に設定したの
で、左側の反射器のスプリアスと右側の反射器のスプリ
アスの発生する周波数帯域が異なり、従来の1個のスプ
リアスを、これより例えば半分の大きさ程度の2個のス
プリアスに分散させることができる。従って、スプリア
スの発生する周波数帯域を不要な周波数帯域に導き出す
ことができ、しかもスプリアスのレベルを低く抑えるこ
とができる。請求項2の発明によれば、各左右の反射器
を必要に応じて複数段に分割し、各段とIDTとの距離
lm,drnを様々な値に設定したので、従来の1個のス
プリアスを、左右の反射器の分割段数に相当する数の小
さなスプリアスに分散させることができる。従って、ス
プリアスの発生する周波数帯域を不要な周波数帯域に導
き出すことができ、しかもスプリアスのレベルを低く抑
えることができる。請求項3の発明によれば、請求項1
または2のSAW共振子を用いてフィルタ等のSAW装
置を構成したので、スプリアスが分散されてスプリアス
の悪影響が低下し、フィルタ特性等を向上できる。
As has been detailed description, according to the present invention, According to the present invention, since the set IDT and different values the distance d l and d r of the reflector of the left and right sandwiching the exciting the SAW The spurious of the left reflector and the frequency of the spurious of the right reflector are different from each other, so that one conventional spurious can be dispersed into two spurs, for example, about half as large as this. Therefore, it is possible to derive a frequency band in which spurious is generated into an unnecessary frequency band, and it is possible to keep the level of spurious low. According to the second aspect of the invention, each of the left and right reflectors is divided into a plurality of stages as necessary, and the distances d lm and d rn between each stage and the IDT are set to various values. Can be dispersed into a small number of spurious components corresponding to the number of divisions of the left and right reflectors. Therefore, it is possible to derive a frequency band in which spurious is generated into an unnecessary frequency band, and it is possible to keep the level of spurious low. According to the invention of claim 3, claim 1
Alternatively, since a SAW device such as a filter is configured by using the two SAW resonators, spurious components are dispersed, adverse effects of spurious components are reduced, and filter characteristics and the like can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施形態を示すSAW共振子の
平面図である。
FIG. 1 is a plan view of a SAW resonator according to a first embodiment of the present invention.

【図2】従来のSAW共振子の平面図である。FIG. 2 is a plan view of a conventional SAW resonator.

【図3】反射器をもたないSAW共振子の特性図であ
る。
FIG. 3 is a characteristic diagram of a SAW resonator having no reflector.

【図4】反射器を有するSAW共振子の特性図である。FIG. 4 is a characteristic diagram of a SAW resonator having a reflector.

【図5】本発明の原理を説明するためのSAW共振子の
IDTと反射器付近の拡大図である。
FIG. 5 is an enlarged view of the vicinity of an IDT and a reflector of a SAW resonator for explaining the principle of the present invention.

【図6】図1のSAW共振子の特性図である。FIG. 6 is a characteristic diagram of the SAW resonator of FIG.

【図7】本発明の第2の実施形態を示すSAW共振子の
平面図である。
FIG. 7 is a plan view of a SAW resonator according to a second embodiment of the present invention.

【図8】図7のSAW共振子の特性図である。FIG. 8 is a characteristic diagram of the SAW resonator shown in FIG. 7;

【図9】SAW共振子の集中定数等価回路図である。FIG. 9 is a lumped constant equivalent circuit diagram of a SAW resonator.

【図10】本発明の第3の実施形態を示す4段はしご型
フィルタの構成図である。
FIG. 10 is a configuration diagram of a four-stage ladder filter showing a third embodiment of the present invention.

【図11】従来と図10のはしご型フィルタの特性図で
ある。
FIG. 11 is a characteristic diagram of the conventional and ladder-type filters of FIG. 10;

【図12】図7のSAW共振子を用いて構成した本発明
の第4の実施形態のはしご型フィルタの挿入損失特性図
である。
FIG. 12 is an insertion loss characteristic diagram of a ladder filter according to a fourth embodiment of the present invention configured using the SAW resonator of FIG. 7;

【符号の説明】[Explanation of symbols]

11 圧電基板 12 入力端子 13 出力端子 14 IDT 15 反射器 15l ,15l1,15l2 左側反射器 15r ,15r1,15r2 右側反射器 21,23,25 並列腕共振子 22,24 直列腕共振子 DESCRIPTION OF SYMBOLS 11 Piezoelectric substrate 12 Input terminal 13 Output terminal 14 IDT 15 Reflector 15 l , 15 l1 , 15 l2 Left reflector 15 r , 15 r1 , 15 r2 Right reflector 21, 23, 25 Parallel arm resonator 22, 24 Series arm Resonator

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 弾性表面波を励振するすだれ状トランス
デューサと、 前記トランスデューサの左側に距離dl (但し、λ/2
≦dl <λ、λは弾性表面波波長)隔てて配置され、前
記弾性表面波を該トランスデューサ側へ反射させる左側
の反射器と、 前記トランスデューサの右側に距離dr (但し、λ/2
≦dr <λ)隔てて配置され、前記弾性表面波を該トラ
ンスデューサ側へ反射させる右側の反射器とが、圧電基
板上に形成され、 前記距離dl とdr を、前記左側及び右側の反射器の反
射作用によって発生するスプリアスを所定の周波数帯域
でかつそのレベルを低く抑えた2個のスプリアスに分散
しうる異なる値に設定したことを特徴とする弾性表面波
共振子。
An interdigital transducer for exciting a surface acoustic wave, and a distance d l (where λ / 2)
≦ d l <λ, λ is disposed surface acoustic wavelength) separated by a left reflector for reflecting the surface acoustic wave to said transducer side, the right a distance d r of the transducer (However, lambda / 2
≦ d r <λ), and a right reflector for reflecting the surface acoustic wave to the transducer side is formed on a piezoelectric substrate, and the distances d l and dr are defined by the left and right sides. A surface acoustic wave resonator characterized in that the spurious generated by the reflecting action of the reflector is set to a different value that can be dispersed in two spurious components whose level is kept low in a predetermined frequency band.
【請求項2】 弾性表面波を励振するすだれ状トランス
デューサと、 複数段に分割されて前記トランスデューサの左側にそれ
ぞれ距離dlm(但し、λ/2≦dlm<λ、λは弾性表面
波波長、mは分割段数であって正の整数)隔てて配置さ
れ、前記弾性表面波を該トランスデューサ側へ反射させ
る左側の反射器と、 複数段に分割されて前記トランスデューサの右側にそれ
ぞれ距離drn(但し、λ/2≦drn<λ、nは分割段数
であって正の整数)隔てて配置され、前記弾性表面波を
該トランスデューサ側へ反射させる右側の反射器とが、
圧電基板上に形成され、 前記距離dlm,drnのすべてを、前記左側及び右側の反
射器の反射作用によって発生するスプリアスを所定の周
波数帯域でかつそのレベルを低く抑えたm+n個のスプ
リアスに分散しうる異なる値に設定したことを特徴とす
る弾性表面波共振子。
2. An interdigital transducer that excites a surface acoustic wave, and a distance d lm (where λ / 2 ≦ d lm <λ, where λ is a surface acoustic wave wavelength, m is the number of division stages and is arranged as a positive integer. A left reflector for reflecting the surface acoustic wave to the transducer side, a plurality of stages and a distance d rn (provided on the right side of the transducer, respectively) , Λ / 2 ≦ d rn <λ, where n is the number of division stages and n is a positive integer), and a right-side reflector that reflects the surface acoustic wave to the transducer side includes:
All of the distances d lm and d rn formed on the piezoelectric substrate are converted into m + n spurs in a predetermined frequency band and the level of the spurious generated by the reflection action of the left and right reflectors is reduced. A surface acoustic wave resonator characterized by being set to different values that can be dispersed.
【請求項3】 請求項1または2の弾性表面波共振子を
用いて構成した弾性表面波装置。
3. A surface acoustic wave device comprising the surface acoustic wave resonator according to claim 1.
JP01844597A 1997-01-31 1997-01-31 Surface acoustic wave resonator Expired - Fee Related JP3835872B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP01844597A JP3835872B2 (en) 1997-01-31 1997-01-31 Surface acoustic wave resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01844597A JP3835872B2 (en) 1997-01-31 1997-01-31 Surface acoustic wave resonator

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006137644A Division JP4124241B2 (en) 2006-05-17 2006-05-17 Surface acoustic wave resonator

Publications (2)

Publication Number Publication Date
JPH10215144A true JPH10215144A (en) 1998-08-11
JP3835872B2 JP3835872B2 (en) 2006-10-18

Family

ID=11971837

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018003296A1 (en) * 2016-06-29 2018-01-04 株式会社村田製作所 Multiplexer, high-frequency front end circuit, and communication device
WO2023074373A1 (en) * 2021-10-29 2023-05-04 株式会社村田製作所 Elastic wave resonator, elastic wave filter device, and multiplexer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018003296A1 (en) * 2016-06-29 2018-01-04 株式会社村田製作所 Multiplexer, high-frequency front end circuit, and communication device
US10917071B2 (en) 2016-06-29 2021-02-09 Murata Manufacturing Co., Ltd. Multiplexer, radio-frequency front-end circuit, and communication apparatus
WO2023074373A1 (en) * 2021-10-29 2023-05-04 株式会社村田製作所 Elastic wave resonator, elastic wave filter device, and multiplexer

Also Published As

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