JPH10215004A - Photoelectronic device - Google Patents

Photoelectronic device

Info

Publication number
JPH10215004A
JPH10215004A JP1821097A JP1821097A JPH10215004A JP H10215004 A JPH10215004 A JP H10215004A JP 1821097 A JP1821097 A JP 1821097A JP 1821097 A JP1821097 A JP 1821097A JP H10215004 A JPH10215004 A JP H10215004A
Authority
JP
Japan
Prior art keywords
epoxy resin
emitting diode
optoelectronic device
resin
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1821097A
Other languages
Japanese (ja)
Other versions
JP3703591B2 (en
Inventor
Koichi Takesako
幸一 竹迫
Toshihide Maeda
俊秀 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP1821097A priority Critical patent/JP3703591B2/en
Publication of JPH10215004A publication Critical patent/JPH10215004A/en
Application granted granted Critical
Publication of JP3703591B2 publication Critical patent/JP3703591B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)

Abstract

PROBLEM TO BE SOLVED: To increase the strength against deformation and breakdown of light emitting diode chips and metal fine wires by external pressure and breakdown and peeling of sealing resin by bending and expansion/shrinkage differences of a printed wiring board by specifying the epoxy resin using cationic- polymerization-based curing catalyst for a resin sealing body. SOLUTION: A transparent resin sealing body 24 is made to have approximately a semispherical shape so as to be resistant against the bending of a printed wiring board 21. For this body 24, the epoxy resin using triallyl- sulfonium-hexafluoroantimonate, which is the cationic-polymerization-based curing catalyst, is adopted. Then, light emitting diode chips 22 and metal fine wires 23, which electrically connect the chips, are seeled and cured under the state, wherein the viscous flowing is blocked, on the main surface of the printed wiring board 21. The transparent resin material withstands bending and the expanding and shrinkage of the printed wiring board 21 and is the material having the high thixotropic property, which can seal and cure the substrate in the specified shape under the state, wherein the viscous flowing is blocked. The material contains silica as filling material.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、特にファクシミ
リ、ワードプロセッサ、複写機の画像読み取り用イメー
ジスキャナおよび表示装置等で使用される発光装置また
は受光装置に適用される光電子装置に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optoelectronic device applied to a light emitting device or a light receiving device used in a facsimile, a word processor, an image scanner for reading an image of a copying machine, a display device, and the like.

【0002】[0002]

【従来の技術】近年、画像読み取り用光源がファクシミ
リ、ワードプロセッサあるいは複写機のイメージスキャ
ナ部等においてイメージセンサで画像情報を読む際に、
読み取りたい原稿に光を照射するための光源として使用
されている。またこの種の装置の光源として発光ダイオ
ード光源が使用されている。
2. Description of the Related Art In recent years, when an image reading light source reads out image information with an image sensor in a facsimile, a word processor, or an image scanner section of a copying machine, etc.
It is used as a light source for irradiating light to a document to be read. In addition, a light emitting diode light source is used as a light source of this type of device.

【0003】以下に従来の画像読み取り用光源の一例と
して、発光ダイオード光源について図4〜図6を参照し
て説明する。図4はこの発光ダイオード光源を使用した
密着型イメージスキャナ部の要部断面図である。この密
着型イメージスキャナ部は発光ダイオード光源1、原稿
2、セルフォックレンズアレイ4、およびイメージセン
サ5で構成されている。3は光軸である。この密着型イ
メージスキャナ部において原稿2上の読み取りラインに
沿って発光ダイオード光源1から光が照射され原稿2か
らの反射光がセルフォックレンズアレイ4で集束されて
同一直線上に配置されたイメージセンサ5へ導かれる。
イメージセンサ5で受光されその微小画素に分解された
画像情報が各画素濃度に対する電気信号として取り出さ
れる。
A light-emitting diode light source will be described below as an example of a conventional image reading light source with reference to FIGS. FIG. 4 is a sectional view of a main part of a contact image scanner unit using the light emitting diode light source. The contact type image scanner unit includes a light emitting diode light source 1, a document 2, a selfoc lens array 4, and an image sensor 5. 3 is an optical axis. In this contact type image scanner unit, light is emitted from a light emitting diode light source 1 along a reading line on a document 2 and reflected light from the document 2 is focused by a selfoc lens array 4 and arranged on the same straight line. It is led to 5.
Image information received by the image sensor 5 and decomposed into minute pixels is extracted as an electric signal for each pixel density.

【0004】図5および図6はこの密着型イメージスキ
ャナ部に用いられる発光ダイオード光源1を示す。図5
はその斜視図、図6は図4のY−Y線に沿った断面図で
ある。この発光ダイオード光源1は所定のパターンの導
電体が形成されたプリント配線基板10、発光ダイオー
ドチップ11、金属細線12、その樹脂封止体13およ
び電流制限用抵抗体19で構成される。プリント配線基
板10上の導電体14の所定箇所に発光ダイオードチッ
プ11を取り付け金属細線12で電気的接続を行い、か
つプリント配線基板10上に透明樹脂封止体13で封止
されている。電流制限用抵抗体19は発光ダイオードチ
ップ11への供給電流を所定の値に制御するもので図5
に示すように発光ダイオードチップ11群に対応させて
プリント配線基板10上に取り付けられその導電体に接
続されている。
FIGS. 5 and 6 show a light emitting diode light source 1 used in this contact type image scanner section. FIG.
6 is a perspective view thereof, and FIG. 6 is a sectional view taken along line YY of FIG. The light emitting diode light source 1 is composed of a printed wiring board 10 on which a conductor of a predetermined pattern is formed, a light emitting diode chip 11, a thin metal wire 12, a resin sealing body 13 thereof, and a current limiting resistor 19. A light emitting diode chip 11 is attached to a predetermined portion of a conductor 14 on the printed wiring board 10 to make electrical connection with a thin metal wire 12 and is sealed on the printed wiring board 10 by a transparent resin sealing body 13. The current limiting resistor 19 controls the current supplied to the light emitting diode chip 11 to a predetermined value.
As shown in FIG. 5, the light emitting diode chips 11 are mounted on the printed wiring board 10 so as to correspond to the groups, and are connected to the conductors.

【0005】[0005]

【発明が解決しようとする課題】上述のような従来の発
光ダイオード光源1に対して、市場では低価格化が求め
られるとともに、セットへの組み込み時等に、取り扱い
に制約が少なく扱い易いものが求められている。そのた
め樹脂封止材料として発光ダイオードチップ11からの
光を効率よく取り出し、発光ダイオードチップ11の数
を最小限に押さえられるように透光性のよいものが求め
られている。
The conventional light-emitting diode light source 1 as described above is required to be low-priced in the market, and there is a light-emitting diode light source that is easy to handle with little restriction when assembled into a set. It has been demanded. Therefore, there is a demand for a resin-encapsulating material having good light-transmitting properties so that light from the light-emitting diode chips 11 can be efficiently extracted and the number of light-emitting diode chips 11 can be minimized.

【0006】また、発光ダイオード光源1をセットへ取
り付ける時、あるいは取り付け不具合によりセットから
発光ダイオード光源1を取り外す時のプリント配線基板
10の屈曲、または製品の輸送、使用環境下における温
度変化によるプリント配線基板10と樹脂封止体13の
膨張収縮率差による剥離等に耐え得るよう柔軟性を有す
るシリコーン樹脂を採用しているのが一般的である。
In addition, when the light emitting diode light source 1 is attached to a set, or when the light emitting diode light source 1 is removed from the set due to a mounting failure, the printed wiring board 10 is bent, or the product is transported, and printed wiring due to a temperature change in an operating environment. In general, a flexible silicone resin is used so as to withstand separation or the like due to a difference in expansion / shrinkage rate between the substrate 10 and the resin sealing body 13.

【0007】しかし、シリコーン樹脂は樹脂硬度が低い
ため、発光ダイオード光源1を製造する際の製造工程の
作業者による樹脂封止体13への押圧、あるいはセット
への組み込み時の樹脂封止体13への押圧等の外圧によ
り発光ダイオードチップ11や金属細線12が変形・破
壊されてしまうという欠点があった。そのため発光ダイ
オード光源1の組み立て工程においても常に外圧が加わ
らないように管理する必要があり、組み立て工数のアッ
プにつながっている。さらにシリコーン樹脂は他物質と
の接着力が弱く、プリント配線基板10との剥離により
発光ダイオードチップ11や金属細線12が破壊される
という不具合が発生する。また、シリコーン樹脂は価格
的にも高価で実用的でないという欠点も有している。
However, since the silicone resin has a low resin hardness, an operator in a manufacturing process of manufacturing the light emitting diode light source 1 presses the resin sealing body 13 or mounts the resin sealing body 13 in a set. There is a drawback that the light emitting diode chip 11 and the thin metal wires 12 are deformed and destroyed by external pressure such as pressing. For this reason, it is necessary to always manage the light emitting diode light source 1 so that no external pressure is applied even in the assembling process, which leads to an increase in the number of assembling steps. Furthermore, the silicone resin has a weak adhesive force with other substances, and the light emitting diode chip 11 and the thin metal wires 12 are broken by peeling from the printed wiring board 10, which causes a problem. Further, the silicone resin has a disadvantage that it is expensive and impractical.

【0008】シリコーン樹脂の代わりにエポキシ樹脂の
採用も考えられるが、一般的な酸無水物系やアミン系エ
ポキシ樹脂では硬度が高く柔軟性がないため、プリント
配線基板10の屈曲や膨張収縮差により樹脂の破壊・剥
離が発生し、結果として発光ダイオードチップ11や金
属細線12を破壊してしまうという不具合が発生してい
る。また、エポキシ樹脂は2液混合タイプが一般的であ
り、時間の経過とともに粘度が変化するため短時間に使
用する必要があり、工程構成上での課題があると同時
に、粘度が上がり封止作業が困難となってしまったもの
については廃棄せざるを得ないため材料のロスも大きく
なってしまう。さらには、酸無水物硬化剤はエポキシ樹
脂と1当量で配合し、熱硬化しても微量の未反応の硬化
剤が残留するため発光ダイオードチップ11を高温高湿
環境下で通電させると外部から浸入した水分は未反応硬
化剤を抽出しながら発光ダイオードチップ11へ到達す
る。この未反応の硬化剤を含んだ水分は強酸性を示すこ
とから高温高湿環境下での発光ダイオードチップ11の
P側電極の電極腐食を促進してしまい、電極部の腐食破
壊による断線が発生してしまう。また、アミン系エポキ
シ樹脂は使用環境下において樹脂が変色して、発光ダイ
オードチップ11からの光が効率よく取り出せないとい
う課題を有していた。
Although the use of an epoxy resin instead of the silicone resin is conceivable, a general acid anhydride or amine epoxy resin has high hardness and lacks flexibility. Failure and delamination of the resin occur, and as a result, the light emitting diode chip 11 and the thin metal wires 12 are broken. In addition, the epoxy resin is generally of a two-liquid type, and its viscosity changes with the passage of time. Therefore, it is necessary to use the epoxy resin in a short period of time. If it becomes difficult to do so, the material must be discarded, so that the material loss increases. Further, the acid anhydride curing agent is mixed with the epoxy resin in an equivalent amount, and a trace of unreacted curing agent remains even when thermally cured. The permeated water reaches the light emitting diode chip 11 while extracting the unreacted curing agent. Since the water containing the unreacted curing agent shows strong acidity, it promotes the corrosion of the P-side electrode of the light emitting diode chip 11 in a high-temperature and high-humidity environment, and the disconnection occurs due to the corrosion destruction of the electrode portion. Resulting in. In addition, the amine-based epoxy resin has a problem in that the resin discolors in a use environment and light from the light emitting diode chip 11 cannot be efficiently extracted.

【0009】この発明は、上記課題を解決するもので、
外圧による発光ダイオードチップや金属細線の変形・破
壊に強く、またプリント配線基板の屈曲・膨張収縮差に
よる封止樹脂の破壊・剥離に強く、さらには電極の腐食
防止に対しても有効で、組み立て容易で低価格な光電子
装置を提供することを目的とする。
The present invention solves the above problems,
Resistant to deformation and destruction of light emitting diode chips and thin metal wires due to external pressure, resistant to destruction and peeling of sealing resin due to bending, expansion and contraction differences of printed wiring boards, and also effective in preventing electrode corrosion, assembly An object is to provide an easy and low-cost optoelectronic device.

【0010】[0010]

【課題を解決するための手段】請求項1記載の光電子装
置は、基板と、この基板上に取り付け接続されて受光ま
たは発光する素子と、この素子を前記基板上で封止した
透光性の樹脂封止体とを備え、前記樹脂封止体はカチオ
ン重合系硬化触媒を用いたエポキシ樹脂であることを特
徴とするものである。
According to a first aspect of the present invention, there is provided an optoelectronic device, comprising: a substrate; an element mounted on and connected to the substrate for receiving or emitting light; and a translucent element in which the element is sealed on the substrate. And a resin sealing body, wherein the resin sealing body is an epoxy resin using a cationic polymerization-based curing catalyst.

【0011】請求項1記載の光電子装置によれば、外
圧、屈曲、膨張および収縮さらには電極腐食に対して強
くなるので、外圧による発光ダイオードチップおよび金
属細線の変形や破壊を防止でき、プリント配線基板の屈
曲ならびに膨張や収縮の差による封止樹脂の破壊および
剥離を防止でき、しかも電極腐食に対して信頼性の向上
が実現できる。さらには組み立てが容易で低価格化への
対応できる製品を提供することが可能となる。
According to the optoelectronic device of the first aspect, the light emitting diode chip and the thin metal wire can be prevented from being deformed or destroyed by the external pressure because they are resistant to external pressure, bending, expansion and contraction, and electrode corrosion. The destruction and peeling of the sealing resin due to the difference in the bending and expansion and contraction of the substrate can be prevented, and the reliability against electrode corrosion can be improved. Furthermore, it is possible to provide a product that is easy to assemble and that can respond to cost reduction.

【0012】請求項2記載の光電子装置は、請求項1に
おいて、カチオン重合系硬化触媒がトリアリールスルホ
ニウムヘキサフルオロアンティモネート塩系硬化剤であ
る。請求項2記載の光電子装置によれば、請求項1の効
果のほか、エポキシ樹脂の一液化が可能であり、これに
より組み立て工程の短縮化および工数削減が可能とな
り、さらに価格低減が実現できる。
According to a second aspect of the present invention, in the first aspect, the cationic polymerization type curing catalyst is a triarylsulfonium hexafluoroantimonate salt type curing agent. According to the optoelectronic device of the second aspect, in addition to the effect of the first aspect, it is possible to use one liquid of the epoxy resin, thereby shortening the assembling process, reducing the number of steps, and further reducing the cost.

【0013】請求項3記載の光電子装置は、請求項1に
おいて、エポキシ樹脂がビスフェノールA型、ビスフェ
ノールF型、および脂環式エポキシの単独もしくはこの
組み合わせよりなる第一のエポキシ樹脂と、柔軟性をも
たせるための第二のエポキシ樹脂であるポリプロピレン
グリコールジグリシジルエーテルからなるものである。
According to a third aspect of the present invention, there is provided the optoelectronic device according to the first aspect, wherein the epoxy resin is made of a bisphenol A type, a bisphenol F type, and a first epoxy resin comprising an alicyclic epoxy alone or in combination with the first epoxy resin. It is made of polypropylene glycol diglycidyl ether, which is a second epoxy resin to be provided.

【0014】請求項3記載の光電子装置によれば、請求
項1と同効果がある。請求項4記載の光電子装置は、請
求項1において、樹脂封止体がチクソトロピック性をも
たせるための充填剤を含有したものである。請求項4記
載の光電子装置によれば、樹脂封止体の所定の樹脂形状
を維持することができる。
According to the optoelectronic device of the third aspect, the same effect as that of the first aspect is obtained. According to a fourth aspect of the present invention, there is provided the optoelectronic device according to the first aspect, wherein the resin sealing body contains a filler for imparting thixotropic properties. According to the optoelectronic device of the fourth aspect, the predetermined resin shape of the resin sealing body can be maintained.

【0015】請求項5記載の光電子装置は、請求項4に
おいて、充填剤がシリカである。請求項5記載の光電子
装置によれば、請求項4と同効果がある。請求項6記載
の光電子装置は、請求項1において、エポキシ樹脂が、
ビスフェノールA型、ビスフェノールF型、脂環式エポ
キシの単独もしくはこの組み合わせの第一のエポキシ樹
脂100重量部に対し、第二のエポキシ樹脂であるポリ
プロピレングリコールジグリシジルエーテル1〜10重
量部、平均粒径5〜50nmのシリカ2〜10重量部、
トリアリールスルホニウムヘキサフルオロアンティモネ
ート塩系硬化剤を1〜10重量部含有したものである。
According to a fifth aspect of the present invention, in the fourth aspect, the filler is silica. According to the optoelectronic device of the fifth aspect, the same effect as that of the fourth aspect is obtained. The optoelectronic device according to claim 6 is the photoelectron device according to claim 1, wherein the epoxy resin is:
Bisphenol A type, bisphenol F type, alicyclic epoxy, alone or in combination, 100 parts by weight of first epoxy resin, 1 to 10 parts by weight of polypropylene glycol diglycidyl ether as second epoxy resin, average particle size 2 to 10 parts by weight of 5 to 50 nm silica,
It contains 1 to 10 parts by weight of a triarylsulfonium hexafluoroantimonate salt-based curing agent.

【0016】請求項6記載の光電子装置によれば、請求
項1、請求項2、請求項3、請求項4および請求項5と
同効果を有する。なお、エポキシ樹脂100重量部およ
び硬化剤3重量部に対して、第二のエポキシ樹脂が0重
量部でかつシリカが2重量部のとき断線し、また第二の
エポキシ樹脂およびシリカが12重量部のとき樹脂剥離
が生じる。またエポキシ樹脂100重量部、ポリプロピ
レングリコールジグリシジルエーテルが4重量部および
シリカが6重量部において、硬化剤が0.5重量部のと
き硬化不十分であり、硬化剤が11重量部のとき断線す
る。
According to the optoelectronic device of the sixth aspect, the same effects as those of the first, second, third, fourth and fifth aspects are obtained. In addition, with respect to 100 parts by weight of the epoxy resin and 3 parts by weight of the curing agent, the disconnection occurs when the second epoxy resin is 0 parts by weight and the silica is 2 parts by weight, and the second epoxy resin and the silica are 12 parts by weight. In this case, resin peeling occurs. When 100 parts by weight of epoxy resin, 4 parts by weight of polypropylene glycol diglycidyl ether and 6 parts by weight of silica are used, curing is insufficient when the curing agent is 0.5 part by weight, and disconnection occurs when the curing agent is 11 parts by weight. .

【0017】請求項7記載の光電子装置は、請求項1に
おいて、樹脂封止体が5000〜30000cpsの粘
度のエポキシ樹脂である。請求項7記載の光電子装置に
よれば、請求項6と同効果が得られる。請求項8記載の
光電子装置は、請求項1において、樹脂封止体が基板上
に多数形成された略半球形状である。
According to a seventh aspect of the present invention, in the first aspect, the resin sealing body is an epoxy resin having a viscosity of 5,000 to 30,000 cps. According to the optoelectronic device of the seventh aspect, the same effect as that of the sixth aspect can be obtained. An eighth aspect of the present invention provides an optoelectronic device according to the first aspect, which has a substantially hemispherical shape in which a large number of resin sealing bodies are formed on a substrate.

【0018】請求項8記載の光電子装置によれば、請求
項1の効果のほか、素子を直線的に整列するだけでな
く、マトリクス的に配置した表示装置等に適用すること
ができる。請求項9記載の光電子装置は、請求項1、請
求項2、請求項3、請求項4、請求項5、請求項6、請
求項7または請求項8において、素子が発光ダイオード
である。
According to the optoelectronic device of the eighth aspect, in addition to the effect of the first aspect, the present invention can be applied not only to linearly aligning elements but also to a display device and the like arranged in a matrix. In the optoelectronic device according to claim 9, in claim 1, claim 2, claim 3, claim 4, claim 5, claim 6, claim 7, or claim 8, the element is a light emitting diode.

【0019】請求項9記載の光電子装置によれば、請求
項1、請求項2、請求項3、請求項4、請求項5、請求
項6、請求項7または請求項8と同効果がある。
According to the optoelectronic device of the ninth aspect, the same effect as that of the first, second, third, fourth, fifth, sixth, seventh or eighth aspects is obtained. .

【0020】[0020]

【発明の実施の形態】この発明の一実施の形態の光電子
装置である発光ダイオード光源における構造について図
1および図2を参照しながら説明する。図1はこの実施
の形態の斜視図、図2は図1のX−X線に沿った断面図
である。図1および図2において、21はプリント配線
基板、22は発光ダイオードチップ、23は金属細線、
24は透明樹脂封止体、25は所定のパターンに形成さ
れた導電体、26は電流制限用抵抗体で発光ダイオード
チツプ22への電流を所定の値に保持するためのもので
ある。プリント配線基板21は定尺シートをワークサイ
ズに切断し、コストダウンのために多数個取りの構成と
してそれぞれの配線回路パターンの導電体25を同時に
形成し、最後に所定の寸法に分割したものである。発光
ダイオードチップ22は各導電体25の所定箇所に図1
に示すように直線上に取り付けられることでその一方の
電極が接続され、他方の電極は他の導電体25′の所定
箇所に金属細線23で接続されている。発光ダイオード
チップ22とこの発光ダイオードチップ22が電気的に
接続された導電体25および金属細線23とは、プリン
ト配線基板21の主面上で透明樹脂封止体24によって
封止・保護されている。透明樹脂封止体24は図1に示
すようにプリント配線基板21の屈曲に対してより強く
なるように形状を従来の一体物から略半球状とし、カチ
オン重合系硬化触媒であるトリアリールスルホニウムヘ
キサフルオロアンティモネート塩系硬化剤を採用してい
る。そして、プリント配線基板21の主面上で発光ダイ
オードチップ22、および発光ダイオードチップ22を
電気的に接続する金属細線23をその粘性流動を阻止し
た状態で封止・硬化させたものである。透明樹脂材料は
プリント配線基板21の屈曲・膨張収縮に耐えるととも
に粘性流動を阻止した状態で所定の形状に封止・硬化で
きるチクソトロピック性の高いものであることが望まし
い。このため、充填剤としてシリカを含有するのが好ま
しい。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a light emitting diode light source which is an optoelectronic device according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a perspective view of this embodiment, and FIG. 2 is a sectional view taken along line XX of FIG. 1 and 2, 21 is a printed wiring board, 22 is a light emitting diode chip, 23 is a thin metal wire,
24 is a transparent resin sealing body, 25 is a conductor formed in a predetermined pattern, and 26 is a current limiting resistor for maintaining a current to the light emitting diode chip 22 at a predetermined value. The printed wiring board 21 is obtained by cutting a fixed size sheet into a work size, simultaneously forming the conductors 25 of the respective wiring circuit patterns as a multi-piece configuration for cost reduction, and finally dividing the conductor into predetermined dimensions. is there. The light emitting diode chip 22 is provided at a predetermined position on each conductor 25 as shown in FIG.
As shown in (1), one electrode is connected by being mounted on a straight line, and the other electrode is connected to a predetermined portion of another conductor 25 'by a thin metal wire 23. The light emitting diode chip 22 and the conductor 25 and the fine metal wire 23 to which the light emitting diode chip 22 is electrically connected are sealed and protected by a transparent resin sealing body 24 on the main surface of the printed wiring board 21. . As shown in FIG. 1, the transparent resin sealing body 24 has a substantially hemispherical shape from a conventional monolithic body so as to be more resistant to bending of the printed wiring board 21, and is a triarylsulfonium hexacene as a cationic polymerization-based curing catalyst. A fluoroantimonate salt-based curing agent is employed. The light emitting diode chip 22 and the fine metal wire 23 for electrically connecting the light emitting diode chip 22 are sealed and cured on the main surface of the printed wiring board 21 in a state where the viscous flow is prevented. It is desirable that the transparent resin material has a high thixotropic property that can withstand the bending, expansion and contraction of the printed wiring board 21 and can be sealed and cured in a predetermined shape while preventing the viscous flow. For this reason, it is preferable to contain silica as a filler.

【0021】[0021]

【表1】 [Table 1]

【0022】発明者は、表1に示す通り第一のエポキシ
樹脂100重量部に対し第二のエポキシ樹脂であるポリ
プロピレングリコールジグリシジルエーテルの配合比を
変化させて、プレッシャークッカーバイアス試験(条件
Ta=121℃、2気圧、定格電圧通電、48時間)を
行った。なお、シリカについては、平均粒径5〜50n
mのものを使用し、封止形状を維持できる量を添加し
た。硬化剤については有機溶媒に溶解したトリアリール
スルホニウムヘキサフルオロアンティモネート塩系硬化
剤を3重量部配合した。
As shown in Table 1, the inventor changed the mixing ratio of polypropylene glycol diglycidyl ether as the second epoxy resin to 100 parts by weight of the first epoxy resin, and carried out a pressure cooker bias test (condition Ta = 121 ° C., 2 atm, rated voltage, 48 hours). In addition, about silica, average particle diameter 5-50n
m, and an amount capable of maintaining the sealing shape was added. As the curing agent, 3 parts by weight of a triarylsulfonium hexafluoroantimonate salt-based curing agent dissolved in an organic solvent was blended.

【0023】表1から明らかなように、第一のエポキシ
樹脂とポリプロピレングリコールジグリシジルエーテル
の配合比はエポキシ樹脂100重量部に対しポリプロピ
レングリコールジグリシジルエーテルは1〜10重量部
が適切であり、さらに発光ダイオードチップ22および
金属細線23を封止できる樹脂高さを有するチクソトロ
ピック性を確保するためには平均粒径5〜50nmのシ
リカを2〜10重量部添加することが必要であった。ま
た調合後のエポキシ樹脂粘度は5000〜30000c
psであった。
As is clear from Table 1, the mixing ratio of the first epoxy resin to polypropylene glycol diglycidyl ether is suitably 1 to 10 parts by weight of polypropylene glycol diglycidyl ether per 100 parts by weight of epoxy resin. In order to ensure thixotropic property having a resin height capable of sealing the light emitting diode chip 22 and the thin metal wires 23, it was necessary to add 2 to 10 parts by weight of silica having an average particle size of 5 to 50 nm. The viscosity of the epoxy resin after blending is 5,000 to 30,000 c.
ps.

【0024】なお、エポキシ樹脂はビスフェノールA
型、ビスフェノールF型、脂環式エポキシの単独もしく
はこの組み合わせによる確認を行ったがいずれも同様の
結果が得られた。
The epoxy resin is bisphenol A
Type, bisphenol F type, and alicyclic epoxy were used alone or in combination, and the same results were obtained.

【0025】[0025]

【表2】 [Table 2]

【0026】次に、硬化剤の配合比を確認するため表2
に示す通り有機溶媒に溶解したトリアリールスルホニウ
ムヘキサフルオロアンティモネート塩系硬化剤の配合比
を変化させて、プレッシャークッカーバイアス試験(条
件Ta=121℃、2気圧、定格電圧通電、48時間)
を行ったところ表2の結果を得た。なお、その他の配合
はエポキシ樹脂100重量部、ポリプロピレングリコー
ルジグリシジルエーテル4重量部、シリカは平均粒径5
〜50nmのものを6重量部とした。
Next, Table 2 was used to confirm the mixing ratio of the curing agent.
Pressure cooker bias test (condition Ta = 121 ° C., 2 atm, rated voltage, 48 hours) by changing the blending ratio of the triarylsulfonium hexafluoroantimonate salt-based curing agent dissolved in the organic solvent as shown in
Was performed, the results shown in Table 2 were obtained. The other components were 100 parts by weight of epoxy resin, 4 parts by weight of polypropylene glycol diglycidyl ether, and silica had an average particle size of 5 parts.
6 to 50 parts by weight.

【0027】表2から明らかなように、有機溶媒に溶解
したトリアリールスルホニウムヘキサフルオロアンティ
モネート塩系硬化剤の配合比は1〜10重量部が適切で
ある。なお、トリアリールスルホニウムヘキサフルオロ
アンティモネート塩を溶解する溶媒は特に特性に関与し
ないことを確認した。
As is evident from Table 2, the appropriate mixing ratio of the triarylsulfonium hexafluoroantimonate salt-based curing agent dissolved in the organic solvent is 1 to 10 parts by weight. In addition, it was confirmed that the solvent in which the triarylsulfonium hexafluoroantimonate salt was dissolved did not particularly affect the properties.

【0028】[0028]

【表3】 [Table 3]

【0029】この実施の形態のカチオン重合系硬化触媒
であるトリアリールスルホニウムヘキサフルオロアンテ
ィモネート塩系硬化剤を使用した、エポキシ樹脂封止体
24を採用した発光ダイオード光源1を作成して、外圧
による破壊試験を行ったところ、表3に示す通りの結果
が得られた。なお、従来のシリコーン樹脂を採用した発
光ダイオード光源の評価結果も併せて示す。
The light emitting diode light source 1 employing the epoxy resin encapsulating body 24 using the triarylsulfonium hexafluoroantimonate salt-based curing agent, which is the cationic polymerization-based curing catalyst of this embodiment, was prepared. , A result as shown in Table 3 was obtained. The evaluation results of the light emitting diode light source using the conventional silicone resin are also shown.

【0030】表3から明らかなように、カチオン重合系
硬化触媒であるトリアリールスルホニウムヘキサフルオ
ロアンティモネート塩系硬化剤を使用したエポキシ樹脂
封止体24を採用した本発明品は、従来品に比べ外圧に
対して顕著な効果が得られた。
As apparent from Table 3, the product of the present invention employing the epoxy resin sealing body 24 using the triarylsulfonium hexafluoroantimonate salt-based curing agent as a cationic polymerization-based curing catalyst is different from the conventional product. A remarkable effect on external pressure was obtained.

【0031】[0031]

【表4】 [Table 4]

【0032】また、各使用環境下におけるプリント配線
基板21の屈曲に対する樹脂封止体24の破壊試験を行
った。なお、酸無水物系のエポキシ樹脂を採用した発光
ダイオード光源の評価結果も併せて示す。表4から明ら
かなように、カチオン重合系硬化触媒であるトリアリー
ルスルホニウムヘキサフルオロアンティモネート塩系硬
化剤を使用したエポキシ樹脂封止体24を採用した本発
明品は、従来品に比べ低・高温域において安定した特性
を有する。
Further, a destruction test of the resin sealing body 24 with respect to the bending of the printed wiring board 21 under each use environment was performed. The evaluation results of the light-emitting diode light source employing the acid anhydride-based epoxy resin are also shown. As is clear from Table 4, the product of the present invention employing the epoxy resin sealing body 24 using the triarylsulfonium hexafluoroantimonate salt-based curing agent, which is a cationic polymerization-based curing catalyst, has a lower yield than conventional products. Has stable characteristics in high temperature range.

【0033】この評価結果は、柔軟性を持たせるための
ポリプロピレングリコールジグリシジルエーテル等の長
鎖系の成分を配合することにより、ガラス転移温度が低
下して可塑化し、外部応力に対する強度が高くなること
による。
The evaluation results show that the addition of a long-chain component such as polypropylene glycol diglycidyl ether for imparting flexibility lowers the glass transition temperature, plasticizes the resin, and increases the strength against external stress. It depends.

【0034】[0034]

【表5】 [Table 5]

【0035】つぎに寿命確認を行ったところ表5に示す
通りの結果が得られた。なお、従来の酸無水物系のエポ
キシ樹脂を採用した発光ダイオード光源の評価結果も併
せて示す。表5から明らかなように、カチオン重合系硬
化触媒であるトリアリールスルホニウムヘキサフルオロ
アンティモネート塩系硬化剤を使用したエポキシ樹脂封
止体を採用した本発明品は、従来品に比べ全ての寿命試
験項目に対して安定した特性を有する。
Next, when the life was confirmed, the results shown in Table 5 were obtained. The evaluation results of a light emitting diode light source employing a conventional acid anhydride-based epoxy resin are also shown. As is clear from Table 5, the product of the present invention employing an epoxy resin sealed body using a triarylsulfonium hexafluoroantimonate salt-based curing agent, which is a cationic polymerization-based curing catalyst, has a longer service life than conventional products. Has stable characteristics for test items.

【0036】一般的に発光ダイオードチップ封止樹脂材
料として使用される酸無水物硬化剤はエポキシ樹脂と1
当量で配合し、加熱硬化しても微量の未反応の硬化剤が
残留する。こうした状況において発光ダイオードチップ
を高温高湿環境下で通電すると外部からの水分は未反応
硬化剤を抽出しながら発光ダイオードチップへ到達す
る。この未反応硬化剤を含んだ水分は強酸性を示すこと
から高温高湿環境下での発光ダイオードチップのP側電
極の電気的腐食を促進し、断線に至ってしまう。
An acid anhydride curing agent generally used as a light emitting diode chip encapsulating resin material is an epoxy resin and
Even if it is blended in an equivalent amount and cured by heating, a small amount of unreacted curing agent remains. In such a situation, when the light emitting diode chip is energized in a high temperature and high humidity environment, moisture from the outside reaches the light emitting diode chip while extracting the unreacted curing agent. Since the water containing the unreacted curing agent exhibits strong acidity, it promotes electrical corrosion of the P-side electrode of the light emitting diode chip under a high-temperature and high-humidity environment, resulting in disconnection.

【0037】この実施の形態によれば、硬化系は酸無水
物硬化剤を使用しておらず、未反応硬化剤に起因する電
極腐食は発生しない。また、各発光ダイオードチップ2
2および金属細線23の樹脂封止体24としてポリプロ
ピレングリコールジグリシジルエーテル、カチオン重合
系硬化触媒であるトリアリールスルホニウムヘキサフル
オロアンティモネート塩系硬化剤を使用したエポキシ樹
脂封止体を採用することで、外圧による発光ダイオード
チップ22および金属細線23の変形や破壊、プリント
配線基板21の屈曲や膨張および収縮の差による封止樹
脂の破壊および剥離がなく、組み立てが容易で低価格化
への対応が可能な製品を提供することが可能となった。
According to this embodiment, the curing system does not use an acid anhydride curing agent, and no electrode corrosion due to the unreacted curing agent occurs. In addition, each light emitting diode chip 2
2 and the resin sealing body 24 of the fine metal wire 23 is an epoxy resin sealing body using polypropylene glycol diglycidyl ether and a triarylsulfonium hexafluoroantimonate salt-based curing agent which is a cationic polymerization-based curing catalyst. There is no deformation or destruction of the light emitting diode chip 22 and the thin metal wire 23 due to external pressure, and no destruction or peeling of the sealing resin due to the difference in bending, expansion or contraction of the printed wiring board 21. It has become possible to provide possible products.

【0038】さらに、カチオン重合系硬化触媒であるト
リアリールスルホニウムヘキサフルオロアンティモネー
ト塩系硬化剤は活性化温度が高く、この硬化剤を使用し
たエポキシ樹脂は90℃までは硬化反応が進まないため
樹脂の一液化が可能であり、そのため組み立て工程の短
縮化および工数削減が可能となり、さらなる価格低減が
実現できる。
Furthermore, the triarylsulfonium hexafluoroantimonate salt-based curing agent, which is a cationic polymerization-based curing catalyst, has a high activation temperature, and an epoxy resin using this curing agent does not progress the curing reaction up to 90 ° C. Since the resin can be made into one liquid, the assembling process can be shortened and the number of steps can be reduced, and further cost reduction can be realized.

【0039】なお、以上の説明では発光ダイオードチッ
プ22を直線的に配置し、取り付けるよう構成した例で
説明したが、図3に示すように発光ダイオードチップ2
を封止した半球状の透明の樹脂封止体24をマトリクス
的に配置した表示装置についても、同様に実施可能であ
る。また発光素子を発光ダイオードで構成した例で説明
したが、レーザやEL等の他の発光素子についても同様
に実施可能である。そして受光装置についても実施可能
である。
In the above description, an example was described in which the light emitting diode chips 22 were linearly arranged and mounted, but as shown in FIG.
The same applies to a display device in which hemispherical transparent resin sealing bodies 24 each of which is sealed are arranged in a matrix. Further, although the description has been given of the example in which the light emitting element is configured by the light emitting diode, the present invention can be similarly applied to other light emitting elements such as a laser and an EL. And it can also be implemented for a light receiving device.

【0040】[0040]

【発明の効果】請求項1記載の光電子装置によれば、外
圧、屈曲、膨張および収縮さらには電極腐食に対して強
くなるので、外圧による発光ダイオードチップおよび金
属細線の変形や破壊を防止でき、プリント配線基板の屈
曲ならびに膨張や収縮の差による封止樹脂の破壊および
剥離を防止でき、しかも電極腐食に対して信頼性の向上
が実現できる。さらには組み立てが容易で低価格化への
対応できる製品を提供することが可能となる。
According to the optoelectronic device of the present invention, the light-emitting diode chip and the thin metal wire can be prevented from being deformed or broken by the external pressure because they are strong against external pressure, bending, expansion and contraction and electrode corrosion. It is possible to prevent destruction and peeling of the sealing resin due to bending of the printed wiring board and differences in expansion and contraction, and furthermore, it is possible to realize improvement in reliability against electrode corrosion. Furthermore, it is possible to provide a product that is easy to assemble and that can respond to cost reduction.

【0041】請求項2記載の光電子装置によれば、請求
項1の効果のほか、エポキシ樹脂の一液化が可能であ
り、これにより組み立て工程の短縮化および工数削減が
可能となり、さらに価格低減が実現できる。請求項3記
載の光電子装置によれば、請求項1と同効果がある。請
求項4記載の光電子装置によれば、樹脂封止体の所定の
樹脂形状を維持することができる。
According to the optoelectronic device of the second aspect, in addition to the effect of the first aspect, it is possible to use one liquid of the epoxy resin, thereby shortening the assembling process and reducing the number of steps, and further reducing the cost. realizable. According to the optoelectronic device of the third aspect, the same effect as that of the first aspect is obtained. According to the optoelectronic device of the fourth aspect, the predetermined resin shape of the resin sealing body can be maintained.

【0042】請求項5記載の光電子装置によれば、請求
項4と同効果がある。請求項6記載の光電子装置によれ
ば、請求項1、請求項2、請求項3、請求項4および請
求項5と同効果を有する。請求項7記載の光電子装置に
よれば、請求項6と同効果が得られる。請求項8記載の
光電子装置によれば、請求項1の効果のほか、素子を直
線的に整列するだけでなく、マトリクス的に配置した表
示装置等に適用することができる。
According to the optoelectronic device of the fifth aspect, the same effect as that of the fourth aspect is obtained. According to the optoelectronic device of the sixth aspect, the same effects as those of the first, second, third, fourth and fifth aspects are obtained. According to the optoelectronic device of the seventh aspect, the same effect as that of the sixth aspect can be obtained. According to the optoelectronic device of the eighth aspect, in addition to the effect of the first aspect, the present invention can be applied not only to linearly aligning elements but also to a display device and the like arranged in a matrix.

【0043】請求項9記載の光電子装置によれば、請求
項1、請求項2、請求項3、請求項4、請求項5、請求
項6、請求項7または請求項8と同効果がある。
According to the optoelectronic device of the ninth aspect, the same effect as that of the first, second, third, fourth, fifth, sixth, seventh or eighth aspects is obtained. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の一実施の形態である発光ダイオード
光源の斜視図である。
FIG. 1 is a perspective view of a light emitting diode light source according to an embodiment of the present invention.

【図2】図1のX−X線に沿った断面図である。FIG. 2 is a cross-sectional view taken along line XX of FIG.

【図3】この発明の他の実施の形態である表示装置の斜
視図である。
FIG. 3 is a perspective view of a display device according to another embodiment of the present invention.

【図4】従来のイメージスキャナの一例を示す断面図で
ある。
FIG. 4 is a cross-sectional view illustrating an example of a conventional image scanner.

【図5】その発光ダイオード光源の斜視図である。FIG. 5 is a perspective view of the light emitting diode light source.

【図6】そのY−Y線に沿った断面図である。FIG. 6 is a sectional view taken along the line YY.

【符号の説明】[Explanation of symbols]

21 プリント配線基板 22 発光ダイオードチップ 23 金属細線 24 樹脂封止体 25 導電体 26 電流制限用抵抗体 DESCRIPTION OF SYMBOLS 21 Printed wiring board 22 Light emitting diode chip 23 Metal thin wire 24 Resin sealing body 25 Conductor 26 Current limiting resistor

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 基板と、この基板上に取り付け接続され
て受光または発光する素子と、この素子を前記基板上で
封止した透光性の樹脂封止体とを備え、前記樹脂封止体
はカチオン重合系硬化触媒を用いたエポキシ樹脂である
ことを特徴とする光電子装置。
1. A resin sealing body comprising: a substrate; an element mounted on and connected to the substrate for receiving or emitting light; and a translucent resin sealing body sealing the element on the substrate. Is an epoxy resin using a cationic polymerization-based curing catalyst.
【請求項2】 カチオン重合系硬化触媒がトリアリール
スルホニウムヘキサフルオロアンティモネート塩系硬化
剤である請求項1記載の光電子装置。
2. The optoelectronic device according to claim 1, wherein the cationic polymerization curing catalyst is a triarylsulfonium hexafluoroantimonate salt curing agent.
【請求項3】 エポキシ樹脂がビスフェノールA型、ビ
スフェノールF型、および脂環式エポキシの単独もしく
はこの組み合わせよりなる第一のエポキシ樹脂と、柔軟
性をもたせるための第二のエポキシ樹脂であるポリプロ
ピレングリコールジグリシジルエーテルからなる請求項
1記載の光電子装置。
3. A first epoxy resin comprising an epoxy resin of bisphenol A type, bisphenol F type and alicyclic epoxy alone or a combination thereof, and polypropylene glycol which is a second epoxy resin for imparting flexibility. 2. The optoelectronic device according to claim 1, comprising diglycidyl ether.
【請求項4】 樹脂封止体がチクソトロピック性をもた
せるための充填剤を含有した請求項1記載の光電子装
置。
4. The optoelectronic device according to claim 1, wherein the resin sealing body contains a filler for imparting thixotropic properties.
【請求項5】 充填剤がシリカである請求項4記載の光
電子装置。
5. The optoelectronic device according to claim 4, wherein the filler is silica.
【請求項6】 エポキシ樹脂が、ビスフェノールA型、
ビスフェノールF型、脂環式エポキシの単独もしくはこ
の組み合わせの第一のエポキシ樹脂100重量部に対
し、第二のエポキシ樹脂であるポリプロピレングリコー
ルジグリシジルエーテル1〜10重量部、平均粒径5〜
50nmのシリカ2〜10重量部、トリアリールスルホ
ニウムヘキサフルオロアンティモネート塩系硬化剤を1
〜10重量部含有したものである請求項1記載の光電子
装置。
6. The epoxy resin is a bisphenol A type,
Bisphenol F type, 1 to 10 parts by weight of polypropylene glycol diglycidyl ether as the second epoxy resin, 100 parts by weight of the first epoxy resin alone or in combination of alicyclic epoxy, average particle diameter 5 to 5
2 to 10 parts by weight of 50 nm silica and 1 part of triarylsulfonium hexafluoroantimonate salt-based curing agent
2. The optoelectronic device according to claim 1, wherein the optoelectronic device contains from 10 to 10 parts by weight.
【請求項7】 樹脂封止体が5000〜30000cp
sの粘度である請求項1記載の光電子装置。
7. The resin sealing body is 5,000 to 30,000 cp.
2. The optoelectronic device according to claim 1, wherein the viscosity is s.
【請求項8】 樹脂封止体が基板上に多数形成された略
半球形状である請求項1記載の光電子装置。
8. The optoelectronic device according to claim 1, wherein a large number of resin sealing bodies are formed on the substrate and have a substantially hemispherical shape.
【請求項9】 素子が発光ダイオードである請求項1、
請求項2、請求項3、請求項4、請求項5、請求項6、
請求項7または請求項8記載の光電子装置。
9. The device according to claim 1, wherein the device is a light emitting diode.
Claim 2, Claim 3, Claim 4, Claim 5, Claim 6,
An optoelectronic device according to claim 7 or claim 8.
JP1821097A 1997-01-31 1997-01-31 Optoelectronic device Expired - Fee Related JP3703591B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1821097A JP3703591B2 (en) 1997-01-31 1997-01-31 Optoelectronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1821097A JP3703591B2 (en) 1997-01-31 1997-01-31 Optoelectronic device

Publications (2)

Publication Number Publication Date
JPH10215004A true JPH10215004A (en) 1998-08-11
JP3703591B2 JP3703591B2 (en) 2005-10-05

Family

ID=11965299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1821097A Expired - Fee Related JP3703591B2 (en) 1997-01-31 1997-01-31 Optoelectronic device

Country Status (1)

Country Link
JP (1) JP3703591B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
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JP2001358370A (en) * 2000-06-13 2001-12-26 Matsushita Electric Ind Co Ltd Wavelength conversion paste material and semiconductor light emitting device and its manufacturing method
WO2002059982A1 (en) * 2001-01-24 2002-08-01 Nichia Corporation Light emitting diode, optical semiconductor elemet and epoxy resin composition suitable for optical semiconductor element and production methods therefor
JP2002241586A (en) * 2001-02-19 2002-08-28 Matsushita Electric Ind Co Ltd Wavelength conversion paste material, composite light- emitting element, semiconductor light-emitting device, and method for producing the same
US6617787B2 (en) 2000-01-11 2003-09-09 Toyoda Gosei Co., Ltd. Light-emitting system with alicyclic epoxy sealing member
WO2003092082A1 (en) * 2002-04-25 2003-11-06 Tabuchi Electric Co.,Ltd. Light emitting diode and process for producing the same
JP2006303509A (en) * 2005-04-21 2006-11-02 Crf Soc Consortile Per Azioni Method of manufacturing transparent device having light emitting diode
US7282853B2 (en) 2002-11-07 2007-10-16 Matsushita Electric Industrial Co., Ltd. LED lamp
JP2007329502A (en) * 2007-08-16 2007-12-20 Toshiba Corp Light-emitting device
JP2009065199A (en) * 2008-11-17 2009-03-26 Toshiba Corp Light emitting device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617787B2 (en) 2000-01-11 2003-09-09 Toyoda Gosei Co., Ltd. Light-emitting system with alicyclic epoxy sealing member
JP2001358370A (en) * 2000-06-13 2001-12-26 Matsushita Electric Ind Co Ltd Wavelength conversion paste material and semiconductor light emitting device and its manufacturing method
US7342357B2 (en) 2001-01-24 2008-03-11 Nichia Corporation Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
WO2002059982A1 (en) * 2001-01-24 2002-08-01 Nichia Corporation Light emitting diode, optical semiconductor elemet and epoxy resin composition suitable for optical semiconductor element and production methods therefor
US6960878B2 (en) 2001-01-24 2005-11-01 Nichia Corporation Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor
US7550096B2 (en) 2001-01-24 2009-06-23 Nichia Corporation Light emitting diode, optical semiconductor device, epoxy resin composition and phosphor suited for optical semiconductor device, and method for manufacturing the same
JP2002241586A (en) * 2001-02-19 2002-08-28 Matsushita Electric Ind Co Ltd Wavelength conversion paste material, composite light- emitting element, semiconductor light-emitting device, and method for producing the same
WO2003092082A1 (en) * 2002-04-25 2003-11-06 Tabuchi Electric Co.,Ltd. Light emitting diode and process for producing the same
CN100353570C (en) * 2002-04-25 2007-12-05 株式会社珍珠电球制作所 Light emitting diode and process for producing the same
US7339201B2 (en) 2002-04-25 2008-03-04 Pearl Lamp Works, Ltd. Light emitting diode and process for producing the same
US7282853B2 (en) 2002-11-07 2007-10-16 Matsushita Electric Industrial Co., Ltd. LED lamp
JP2006303509A (en) * 2005-04-21 2006-11-02 Crf Soc Consortile Per Azioni Method of manufacturing transparent device having light emitting diode
JP2007329502A (en) * 2007-08-16 2007-12-20 Toshiba Corp Light-emitting device
JP2009065199A (en) * 2008-11-17 2009-03-26 Toshiba Corp Light emitting device

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