JPH10199821A - Heat exhaust structure of semiconductor manufacture device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To cause the temperature distribution of a heater to be uniform and to prevent the infiltration of dust. SOLUTION: An exhaust port 27 is provided for a heater 21 which stores a reaction tube 22 inside. A duct 28 is alloved to communicate with the exhaust port 27, and a damper 29 is provided at a position lower than the exhaust port 27 of the duct 28. Since cold air does not rise, cold air is suppressed from entering into the heater 21, the temperature distribution of the resection tube 22 and the heater 21 is prevented from becoming ununiform and external air is prevented from infiltrating into the heater 21. Thus, the invasion of dust can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a heat exhaust structure of a semiconductor manufacturing apparatus having a vertical furnace.

[0002]

2. Description of the Related Art A semiconductor manufacturing apparatus includes an airtight reaction tube, which is surrounded by a heater. A required reaction gas is introduced into the reaction tube under a high-temperature and reduced-pressure condition. Is charged, and processing such as thin film formation is performed.

A conventional heat exhaust structure in a semiconductor manufacturing apparatus having a vertical furnace will be described with reference to FIG.

In FIG. 2, reference numeral 1 denotes a hollow heater. A reaction tube 2 is provided inside the heater 1 concentrically with the heater 1, and a gap 12 is provided between the heater 1 and the reaction tube 2. Are formed. A large number of wafers 3 are placed inside the reaction tube 2.
Is provided in a horizontal posture, and the boat 4 is lifted and lowered by a boat elevator (not shown) via a boat cap 5 and a furnace lid 6, and can be inserted into and removed from the reaction tube 2. .

[0005] An exhaust port 7 is provided at the upper end of the heater 1, and an exhaust duct 8 communicating with the gap 12 via the exhaust port 7 is provided. The exhaust duct 8 extends horizontally, and a damper 9 is provided on the way, and the exhaust duct 8 communicates with a blower (not shown).

The processing of the wafer 3 in the semiconductor manufacturing apparatus is performed by heating the reaction tube 2 by the heater 1, evacuating the reaction tube 2 by a vacuum source (not shown), and introducing a reaction gas. After processing one batch of wafers,
The boat 4 is lowered and withdrawn from the reaction tube 2.

After the processing is completed, the heater 1, the reaction tube 2
When the wafer to be processed next is immediately loaded into the reaction tube 2, the wafer is heated by the residual heat of the heater 1 and the reaction tube 2, reacting with oxygen in the atmosphere, and causing unnecessary surface on the wafer surface. A natural oxide film is formed. The natural oxide film has an adverse effect on the processing on the wafer. In order to prevent the formation of the natural oxide film, the air around the heater 1 is sucked by a blower through the damper 9 to remove the air in the gap 12. The air was exhausted to cool the heater 1 and the reaction tube 2.

[0008]

However, in the above-described exhaust structure of the conventional semiconductor manufacturing apparatus, the exhaust port 7 and the damper 9 are not provided.
Are located at the same height, and the convection due to the density difference between the air inside the reactor and the outside air causes cold air 10
Flows into the gap 12, and the cold air 10
Then, the vicinity of the exhaust port 7 of the reaction tube 2 is cooled. For this reason, even when the temperature is raised again, the effect of partial cooling remains and the temperature distribution in the reactor becomes uneven, and air from the outside may contain dust. If the dust enters the exhaust duct 8, there is a possibility that dust may enter the inside of the reaction tube 2, and the dust adheres to a substrate to be processed such as a wafer, thereby causing problems such as a reduction in processing quality.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and aims to make the temperature distribution of a heater uniform and prevent dust from entering.

[0010]

According to the present invention, a heater accommodating a reaction tube therein is provided with an exhaust port, a duct is communicated with the exhaust port, and a damper is provided below the exhaust port of the duct. It relates to the heat exhaust structure of the semiconductor manufacturing equipment,
The damper is provided below the exhaust port, and since the cool air does not rise, the cool air is suppressed from entering the heater, and the temperature distribution of the reaction tube and the heater becomes uneven. Since the outside air does not enter into the heater, dust can be prevented from entering.

[0011]

Embodiments of the present invention will be described below with reference to the drawings.

The semiconductor manufacturing apparatus according to the present embodiment is formed substantially in the same manner as the above-described conventional semiconductor manufacturing apparatus. A reaction tube 22 is provided upright in a hollow heater 21 concentrically with the heater 21 and the reaction is carried out. A gap 32 is formed between the tube 22 and the heater 21. A boat 24 in which a large number of wafers 23 are loaded in a horizontal posture is provided inside the reaction tube 22, and the boat 24 includes a boat cap 25, a furnace cap 26.
Through the boat elevator (not shown).

An exhaust duct 28 is provided at the upper end of the heater 21 and communicates with the gap 32 through an exhaust port 27. The exhaust duct 28 is bent at a position downstream of the exhaust port 27 and extends downward. , And a blower (not shown). A damper 29 is provided below the exhaust port 27 of the exhaust duct 28.

Processing of a wafer in the semiconductor manufacturing apparatus is performed in the same manner as in the above-described conventional semiconductor manufacturing apparatus.

When the heater 21 and the reaction tube 22 are cooled, the air in the gap 32 is sucked by a blower (not shown) with the damper 29 opened, and exhausted to the outside. Since the damper 29 is located below the exhaust port 27, even when the damper 29 is opened, the outside air does not flow backward from the damper 29. Therefore,
External cold air 30 is prevented from entering the inside of the heater 21 from the exhaust port 27, the heater 21 and the reaction tube 22 are prevented from being partially cooled, and the temperature distribution in the furnace is improved. In addition, since the intrusion of external air is suppressed, the intrusion of dust is also suppressed, and the processing quality on a substrate to be processed such as a wafer is improved.

[0016]

As described above, according to the present invention, since the damper is provided below the exhaust port, it is possible to prevent external cold air from entering from the damper and entering the heater from the exhaust port. So that partial cooling in the furnace is prevented,
The temperature distribution in the heater and the furnace is improved. In addition, since intrusion of external air is suppressed, intrusion of dust can also be prevented, and excellent effects such as improvement in processing quality of a substrate to be processed such as a wafer are exhibited.

[Brief description of the drawings]

FIG. 1 is a schematic explanatory view showing an embodiment of the present invention.

FIG. 2 is a schematic explanatory view showing a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 21 Heater 22 Reaction tube 23 Wafer 24 Boat 25 Boat gap 26 Furnace lid 27 Exhaust port 28 Exhaust duct 29 Damper 30 Cold air 32 Gap

Claims (1)

[Claims] 1. A semiconductor manufacturing apparatus, wherein an exhaust port is provided in a heater accommodating a reaction tube therein, a duct communicates with the exhaust port, and a damper is provided below the exhaust port of the duct. Heat exhaust structure.