JPH10190077A - Manufacture of a-axis high temperature superconductive thin film - Google Patents
Manufacture of a-axis high temperature superconductive thin filmInfo
- Publication number
- JPH10190077A JPH10190077A JP9259452A JP25945297A JPH10190077A JP H10190077 A JPH10190077 A JP H10190077A JP 9259452 A JP9259452 A JP 9259452A JP 25945297 A JP25945297 A JP 25945297A JP H10190077 A JPH10190077 A JP H10190077A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature
- substrate
- target
- repetition rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
- H10N60/0521—Processes for depositing or forming superconductor layers by pulsed laser deposition, e.g. laser sputtering; laser ablation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic materials
- H10N60/857—Ceramic materials comprising copper oxide
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、パルスレ−ザを利
用してＹＢａ2 Ｃｕ3 Ｏ7-x （以下ＹＢＣＯと称する）
の高温超伝導薄膜の製造方法に関し、特に高速反復率の
パルスレーザ（ｐｕｌｓｅ ｌａｓｅｒ）を利用したａ
−軸背向ＹＢＣＯ薄膜製造方法に関するものである。The present invention relates to a YBa 2 Cu 3 O 7-x (hereinafter referred to as YBCO) using a pulse laser.
The present invention relates to a method for producing a high-temperature superconducting thin film, and more particularly to a method using a pulse laser having a high repetition rate.
The present invention relates to a method of manufacturing a YBCO thin film with an axis facing backward.
【０００２】[0002]
【従来の技術】ＹＢＣＯ高温超伝導体が発見されて以
来、平面型サンドイッチ形態のジョセプソン素子或いは
トランジスタのような電子素子応用のために、この物質
を薄膜で製造することが最重要課題として認識されてき
た。特に、ＹＢＣＯ超Ｇ導体は結晶構造が異方性をもつ
ため、ａ−軸或いはｂ−軸に対する超伝導特性を示す電
子対の可干渉長さが、ｃ−軸背向の可干渉長さに比して
１０倍程度長い。このような理由で、超伝導薄膜の電子
素子応用の際に、ａ−軸或いはｂ−軸背向に電流が流れ
るようにすることが有利である。したがって、超伝導薄
膜の結晶背向を制御することが非常に重要である。2. Description of the Related Art Since the discovery of YBCO high-temperature superconductors, it has been recognized as a top priority to manufacture this material in a thin film for the application of electronic devices such as Josephson devices or transistors in a planar sandwich. Have been. In particular, since the YBCO super-G conductor has an anisotropic crystal structure, the coherence length of the electron pair exhibiting superconductivity with respect to the a-axis or the b-axis becomes larger than the coherence length in the c-axis backward direction. It is about 10 times longer than that. For this reason, it is advantageous to allow a current to flow in the backward direction of the a-axis or the b-axis when applying a superconducting thin film to an electronic device. Therefore, it is very important to control the crystal orientation of the superconducting thin film.
【０００３】ＹＢＣＯ超伝導結晶のａ−軸が基板表面に
垂直に成長して、ａ―軸背向超伝導薄膜は従来の多くの
種類の物理的蒸着法と化学的蒸着法に就いては、低温蒸
着法により製造されてきた。｛Ｊ．Ｆｕｊｉｔａ，ｅｔ
ａｌ．，Ｊ．Ａｐｐ１．Ｐｈｙｓ．，６４（３），１
２９０（１９８８）．，Ｔ．Ａｒｉｋａｗａ，ｅｔａ
ｌ．，Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，２９（１２）．Ｌ２
１９９（１９９０）．，Ｙ．Ｑ．Ｌｉ，ｅｔ ａ１．，
Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，７１（５），２４２７（１
９９２）．，Ｔ．Ｂｕｒｍａｎｎ，ｅｔ ａｌ．，Ｓｏ
ｌｉｄ Ｓｔａｔｅ Ｃｏｍｍ．，９０（９），５９９
（１９９４）｝、低温蒸着法は蒸着基板の温度をｃ−軸
背向ＹＢＣＯ薄膜が成長する温度の７００℃と８００℃
の間の温度よりも、１００℃程度低い６００℃と７００
℃の間の基板温度で、ａ−軸背向薄膜を製造する方法で
あり、このような低温蒸着法においては０．１ｎｍ／秒
以下の低蒸着速度でａ−軸背向薄膜を製造した。特に、
パルスレーザ製造方法においては、１０Ｈｚ以下の低い
パルスレ−ザ反復率を使用して、比較的低い蒸着速度で
ａ−軸背向薄膜を製造した。｛（Ｒ．Ｋ．Ｓｉｎｇｈ，
ｅｔ ａｌ，Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，６７（８），
３７８５（１９９０）．，Ｓ．Ｈ．Ｌｅｅ，ｅｔ ａ
ｌ．，Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，７０（１０），５６
６１（１９９１｝｝[0003] The a-axis of a YBCO superconducting crystal grows perpendicular to the substrate surface, and the a-axis backside superconducting thin film is formed by many kinds of conventional physical vapor deposition and chemical vapor deposition. It has been manufactured by a low-temperature deposition method. {J. Fujita, et
al. , J. et al. App1. Phys. , 64 (3), 1
290 (1988). , T .; Arikawa, eta
l. , J. et al. Appl. Phys. , 29 (12). L2
199 (1990). , Y. Q. Li, et a1. ,
J. Appl. Phys. , 71 (5), 2427 (1
992). , T .; See Burmann, et al. , So
lid State Comm. , 90 (9), 599
(1994) 低温, the low-temperature deposition method sets the temperature of the deposition substrate to 700 ° C. and 800 ° C., which are the growth temperatures of the c-axis back-facing YBCO thin film
600 ° C. and 700 ° C. lower than the temperature between
This is a method for producing an a-axis back-facing thin film at a substrate temperature of between 0 ° C., and in such a low-temperature deposition method, an a-axis back-facing thin film was produced at a low deposition rate of 0.1 nm / sec or less. Especially,
In the pulsed laser manufacturing method, a-axis back-facing thin films were manufactured at relatively low deposition rates using a low pulsed laser repetition rate of 10 Hz or less. ｛(RK Singh,
et al, J.A. Appl. Phys. , 67 (8),
3785 (1990). , S .; H. Lee, et a
l. , J. et al. Appl. Phys. , 70 (10), 56
61 (1991)
【０００４】このような低蒸着速度は、低速反復率を利
用したａ−軸背向薄膜の低温蒸着法によれば、７００℃
以上の高温ではａ−軸背向でなく、ｃ−軸背向ＹＢＣＯ
薄膜が成長し、さらに６００℃以下の低温で蒸着された
ａ−軸背向薄膜内部には、低温のために生じた酸素の不
規則整列が発生し、ＹＢＣＯ高温超伝導薄膜の超伝導物
性が低下する短所がある。しかし、７００℃以上の高温
において蒸着されたｃ−軸背向薄膜においては、酸素の
不規則整列が発生しないので、超伝導物性が良好であ
る。According to the low-temperature deposition method of the a-axis back-facing thin film using a low repetition rate, the low deposition rate is 700 ° C.
At the high temperature described above, the YBCO is not c-axis backward but c-axis back.
The thin film grows, and in the a-axis backside thin film deposited at a low temperature of 600 ° C. or less, the disordered arrangement of oxygen generated due to the low temperature occurs, and the superconducting properties of the YBCO high-temperature superconducting thin film are reduced. There are disadvantages to be reduced. However, in the c-axis back-facing thin film deposited at a high temperature of 700 ° C. or more, the disordered arrangement of oxygen does not occur, so that the superconductivity is good.
【０００５】[0005]
【発明が解決しようとする課題】したがって、本発明は
パルスレーザを使用してａ−軸背向ＹＢａ2 Ｃｕ3 Ｏ
7-x 薄膜を製造するにあたり、高速反復率を利用したａ
−軸背向ＹＢａ2 Ｃｕ3 Ｏ7-x 高温超伝導薄膜の成長方
法を提供することにその目的がある。SUMMARY OF THE INVENTION Accordingly, the present invention provides an a-axis-backward YBa 2 Cu 3 O using a pulsed laser.
In manufacturing 7-x thin film, a using high repetition rate a
- it is an object to provide a JikuseMuko YBa 2 Cu 3 O 7-x growth method of high-temperature superconducting thin films.
【０００６】[0006]
【課題を解決するための手段】上述した目的を達成する
ために本発明によるａ−軸背向高温超伝導薄膜製造方法
は、超伝導焼結体のターゲット表面に高速反復率を有す
るパルスレ−ザを照射する高温の基板温度で、ａ−軸背
向超伝導薄膜を蒸着することを特徽とする。In order to achieve the above-mentioned object, a method of manufacturing an a-axis back-facing high-temperature superconducting thin film according to the present invention comprises a pulse laser having a high repetition rate on a target surface of a superconducting sintered body. A special feature is to deposit an a-axis back-facing superconducting thin film at a high substrate temperature for irradiating the substrate.
【０００７】本発明のａ−軸背向薄膜製造方法は次のよ
うに構成される。 ａ．ＹＢＣＯ薄膜蒸着時の基板の温度は７００℃と８０
０℃の間で保たれる。 ｂ．ＹＢＣＯ薄膜蒸着時の酸素圧力は１００ｍＴｏｒｒ
と３００ｍＴｏｒｒの間で保たれる。 ｃ．ターゲットと基板間の距離は４ｃｍと１０ｃｍの間
で保たれる。 ｄ．ＹＢＣＯターゲット表面に照射されるパルスレ−ザ
のエネルギー密度は最少限１Ｊ／ｃｍ2 である。 ｅ．ＹＢＣＯターゲット表面に照射されるパルスレーザ
の反復率は１０Ｈｚと１００Ｈｚの間で保たれる。この
ときの反復率と蒸着速度は表１の通りである。The method for manufacturing an a-axis backside thin film according to the present invention is configured as follows. a. The temperature of the substrate during the deposition of the YBCO thin film was 700 ° C and 80 ° C.
It is kept between 0 ° C. b. Oxygen pressure at the time of YBCO thin film deposition is 100 mTorr
And 300 mTorr. c. The distance between the target and the substrate is kept between 4 cm and 10 cm. d. The energy density of the pulse laser applied to the YBCO target surface is at least 1 J / cm 2 . e. The repetition rate of the pulsed laser illuminating the YBCO target surface is kept between 10 Hz and 100 Hz. Table 1 shows the repetition rate and the deposition rate at this time.
【０００８】[0008]
【表１】 [Table 1]
【０００９】[0009]
【発明の実施の形態】以下に、添付した図面を参照して
本発明の実施例を詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
【００１０】パルスレ一ザを使用してＹＢＣＯ高温超伝
導薄膜を蒸着する装置の構成図を図１に示した。真空蒸
着室（９）において円板形態のＹＢＣＯ組成を有する均
―の焼結体ターゲット（１）を回転可能なターゲット取
り付け器（８）に取り付け、ターゲットの向かい側に一
定距離を置いておかれた基板加熱器（３）に取り付けら
れた酸化物単結晶基板（２）が位置する。続いて、真空
蒸着室（９）の真空度をターボ分子式ポンプ（１０）を
使用して、１０-6Ｔｏｒｒの圧力で保持させる。その
後、基板加熱器（３）で基板（２）を加熱して基板の温
度を７００℃と８００℃間に昇温する。更に続いて、高
純度の酸素気体をガス供給ノズル（４）を通じて真空蒸
着室（９）内部に注入して１００ｍＴｏｒｒと３００ｍ
Ｔｏｒｒの間に保持する。FIG. 1 shows the configuration of an apparatus for depositing a YBCO high-temperature superconducting thin film using a pulse laser. In a vacuum deposition chamber (9), a uniform sintered body target (1) having a disc-shaped YBCO composition was mounted on a rotatable target mounter (8), and was placed at a fixed distance from the target. An oxide single crystal substrate (2) attached to a substrate heater (3) is located. Subsequently, the degree of vacuum in the vacuum evaporation chamber (9) is maintained at a pressure of 10 -6 Torr by using a turbo molecular pump (10). Thereafter, the substrate (2) is heated by the substrate heater (3) to raise the temperature of the substrate between 700 ° C and 800 ° C. Subsequently, a high-purity oxygen gas was injected into the vacuum deposition chamber (9) through the gas supply nozzle (4) to obtain a pressure of 100 mTorr and 300 mTorr.
Hold during Torr.
【００１１】次に、波長が３０８ｎｍのパルス型紫外線
ＸｅＣ１エクシーマレ−ザ光線（６）を、真空蒸着室
（９）の外部からターゲット（１）表面に対して４５°
の角度で入射し、回転するＹＢＣＯ焼結体ターゲット
（１）の表面に１０Ｈｚと１００Ｈｚの間の反復率で照
射して、プラズマ（１１）を発生し、酸化物単結晶基板
（２）の表面にとどくようにしてａ−軸背向ＹＢＣＯ超
伝導薄膜（１２）を蒸着させる。Next, a pulse type ultraviolet ray XeC1 excimer laser beam (6) having a wavelength of 308 nm is applied from the outside of the vacuum evaporation chamber (9) to the surface of the target (1) at 45 °.
The surface of the oxide single crystal substrate (2) is generated by irradiating the surface of the rotating YBCO sintered target (1) at a repetition rate of 10 Hz and 100 Hz to generate a plasma (11). The a-axis backward YBCO superconducting thin film (12) is deposited.
【００１２】図２は、本発明のパルスレ−ザ蒸着方法に
より基板上に製造されたａ−軸背向ＹＢａ2 Ｃｕ3 Ｏ
7-x 高温超伝導薄膜の断面図である。酸化物単結晶基板
（２）の上部にａ−軸背向ＹＢＣＯ超伝導薄膜（１２）
が蒸着された構造を示す。FIG. 2 shows an a-axis backward YBa 2 Cu 3 O manufactured on a substrate by the pulse laser deposition method of the present invention.
It is sectional drawing of a 7-x high temperature superconducting thin film. A-axis YBCO superconducting thin film (12) on the oxide single crystal substrate (2)
Shows a structure in which is deposited.
【００１３】本発明の第１実施例においては、回転する
ＹＢＣＯターゲット表面に照射するパルスレーザ反復率
を異なるようにして、ＹＢＣＯ高温超伝導薄膜を蒸着す
ることに特徴がある。詳細な蒸着工程は次の通りであ
る。 蒸着基板；ＬａＳｒＧａＯ4 （１００）単結晶 蒸着基板の温度：７００℃ パルスレーザ入射エネルギー密度：1 Ｊ／ｃｍ2 パルスレーザ反復率：１Ｈｚ，５Ｈｚ，１０Ｈｚ，２０
Ｈｚ，５０Ｈｚ 基板とターゲット間の距離：４．２ｃｍ 蒸着酸素圧力：１００ｍＴｏｒｒ 薄膜厚さ：１００ｎｍ〜３００ｎｍ パルスレ−ザ反復率を異なるようにして、蒸着したＹＢ
ＣＯ薄膜の背向をＸ−線回折パターンにより分析した。
７００℃基板温度において、１Ｈｚの低い反復率で蒸着
したＹＢＣＯ薄膜はｃ−軸背向に成長し、一方１０Ｈｚ
以上の高速反復率で蒸着したＹＢＣＯ薄膜はａ−軸背向
に成長した。The first embodiment of the present invention is characterized in that a YBCO high-temperature superconducting thin film is deposited by changing the pulse laser repetition rate for irradiating the rotating YBCO target surface. The detailed deposition process is as follows. Vapor deposition substrate; LaSrGaO 4 (100) single crystal Temperature of vapor deposition substrate: 700 ° C. Pulse laser incident energy density: 1 J / cm 2 Pulse laser repetition rate: 1 Hz, 5 Hz, 10 Hz, 20
Hz, 50 Hz Distance between substrate and target: 4.2 cm Deposition oxygen pressure: 100 mTorr Thin film thickness: 100 nm to 300 nm Deposited YB with different pulse laser repetition rate
The back side of the CO thin film was analyzed by an X-ray diffraction pattern.
At 700 ° C. substrate temperature, YBCO thin films deposited at a low repetition rate of 1 Hz grow c-axis backward, while 10 Hz
The YBCO thin film deposited at the above high repetition rate grew backward in the a-axis.
【００１４】図３より、ａ−軸背向薄膜の背向分率とパ
ルスレーザ反復率との関係を示した。ａ−軸背向分率が
１００％の場合が、ａ−軸背向として成長した薄膜であ
り、また１０Ｈｚ以上の高速パルスレーザ反復率で蒸着
したＹＢＣＯはａ−軸背向薄膜に製造されることが判
る。FIG. 3 shows the relationship between the back-facing fraction of the a-axis back-facing thin film and the pulse laser repetition rate. When the a-axis backward fraction is 100%, the thin film is grown as the a-axis backward, and YBCO deposited at a high-speed pulse laser repetition rate of 10 Hz or more is manufactured as the a-axis backward film. You can see that.
【００１５】本発明の第２実施例においては、５０Ｈｚ
の高速反復率をＹＢＣＯターゲット表面に照射して、基
板温度を異なるようにして、ａ―軸背向ＹＢＣＯ高温超
伝導薄膜を蒸着することに特徴がある。詳細な蒸着工程
は次の通りである。 蒸着基板；ＬａＳｒＧａＯ4 （１００）単結晶 蒸着基板の温度：７００℃、７２０℃、７３０℃、７４
０℃、７５０℃ パルスレーザ入射エネルギー密度：1 Ｊ／ｃｍ2 パルスレ−ザ反復率：５０Ｈｚ 基板とターゲット間の距離：４．２ｃｍ 蒸着酸素圧力：１００ｍＴｏｒｒ 薄膜厚さ：１００ｎｍ〜３００ｎｍ パルスレ―ザ蒸着温度を異なるようにして、蒸着したＹ
ＢＣＯ薄膜の背向をＸ−線回折パターンにより分析し
た。５０Ｈｚの高速反復率で蒸着した薄膜は、７２０℃
の温度においてもａ−軸背向薄膜に成長した。しかし、
高速反復率で蒸着した薄膜と比較するために、１Ｈｚの
低速反復率で蒸着した薄膜は、７２０℃の温度において
ｃ−軸背向に成長した。In the second embodiment of the present invention, 50 Hz
The YBCO target surface is irradiated with the high-speed repetition rate described above, and the substrate temperature is changed to deposit the Y-BCO high-temperature superconducting thin film on the a-axis back. The detailed deposition process is as follows. Deposition substrate; LaSrGaO 4 (100) single crystal Temperature of deposition substrate: 700 ° C., 720 ° C., 730 ° C., 74
0 ° C., 750 ° C. Pulsed laser incident energy density: 1 J / cm 2 Pulsed laser repetition rate: 50 Hz Distance between substrate and target: 4.2 cm Deposition oxygen pressure: 100 mTorr Thin film thickness: 100 nm to 300 nm Pulsed laser deposition temperature And the deposited Y
The back side of the BCO thin film was analyzed by X-ray diffraction pattern. The thin film deposited at a high repetition rate of 50 Hz is 720 ° C.
At this temperature, an a-axis thin film was grown. But,
For comparison with films deposited at a high repetition rate, films deposited at a low repetition rate of 1 Hz grew c-axis backward at a temperature of 720 ° C.
【００１６】図４に、１Ｈｚの低速反復率と５０Ｈｚの
高速反復率で蒸着したＹＢＣＯ高温超伝導薄膜のａ−軸
背向分率と蒸着温度間の関係を示した。ａ−軸背向分率
が１００％の場合ａ−軸背向に成長した薄膜である。ａ
−軸背向ＹＢＣＯ薄膜の成長温度が５０Ｈｚの高速反復
率で薄膜を蒸着する場合、１Ｈｚの低速反復率で蒸着す
る場合と比べて２０℃増加した。すなわち、図４よりパ
ルスレーザ反復率が高速で増加するにつれてａ−軸背向
ＹＢＣＯ薄膜の成長温度が増加することが判る。FIG. 4 shows the relationship between the a-axis backward fraction and the deposition temperature of a YBCO high-temperature superconducting thin film deposited at a low repetition rate of 1 Hz and a high repetition rate of 50 Hz. When the a-axis backward fraction is 100%, the thin film has grown in the a-axis backward direction. a
The growth temperature of the axially-backward YBCO thin film was increased by 20 ° C. when depositing the thin film at a high repetition rate of 50 Hz compared to depositing the thin film at a low repetition rate of 1 Hz. That is, it can be seen from FIG. 4 that the growth temperature of the a-axis back YBCO thin film increases as the pulse laser repetition rate increases at a high speed.
【００１７】[0017]
【発明の効果】上述した如く、本発明の高速パルスレ−
ザ反復率を利用したＹＢＣＯ高温超伝導薄膜蒸着方法に
よれば、ｃ−軸背向薄膜が成長する７００℃以上の高温
においても、ａ−軸背向ＹＢＣＯ薄膜の成長が可能であ
る卓越した効果がある。As described above, the high-speed pulse laser according to the present invention is used.
According to the YBCO high-temperature superconducting thin film deposition method utilizing the repetition rate, an excellent effect that an a-axis backside YBCO thin film can be grown even at a high temperature of 700 ° C. or more at which a c-axis backside thin film grows. There is.
【図１】本発明のパルスレーザを利用したＹＢａ2 Ｃｕ
3 Ｏ7-x 高温超伝導薄膜蒸着装置の構成図である。FIG. 1 shows YBa 2 Cu using a pulse laser according to the present invention.
It is a block diagram of a 3 O 7-x high temperature superconducting thin film deposition apparatus.
【図２】本発明のパルスレーザ蒸着方法により、基板上
に製造されたａ−軸背向ＹＢａ2 Ｃｕ3 Ｏ7-x 高温超伝
導薄膜断面図である。FIG. 2 is a cross-sectional view of an a - axis-backward YBa 2 Cu 3 O 7-x high - temperature superconducting thin film manufactured on a substrate by a pulse laser deposition method of the present invention.
【図３】本発明のパルスレ−ザ反復率を異なるようにし
て蒸着したＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜のａ−軸背向分率
と、パルスレーザ反復率との関係を示すグラフである。FIG. 3 is a graph showing the relationship between the a-axis backward fraction and the pulse laser repetition rate of a YBa 2 Cu 3 O 7-x thin film deposited with different pulse laser repetition rates according to the present invention. .
【図４】本発明の低速反復率と高速反復率を利用して蒸
着したＹＢａ2 Ｃｕ3 Ｏ7-x 膜の膜のａ−軸背向成長と
蒸着温度との関係を示すグラフである。FIG. 4 is a graph showing the relationship between a-axis backward growth of a YBa 2 Cu 3 O 7-x film deposited using a low repetition rate and a high repetition rate of the present invention and a deposition temperature.
１ ＹＢａ2 Ｃｕ3 Ｏ7-x 焼結体ターゲット ２ 単結晶基板 ３ 基板加熱器 ４ ガス供給ノズル ５ パルスレ−ザ集光レンズ ６ パルスレ−ザ光線 ７ パルスレ―ザ光線入射窓 ８ ターゲット取り付け器 ９ 真空蒸着室 １０ ターボ分子式ポンプ １１ プラズマ １２ ａ−軸背向ＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜Reference Signs List 1 YBa 2 Cu 3 O 7-x sintered target 2 Single crystal substrate 3 Substrate heater 4 Gas supply nozzle 5 Pulse laser condensing lens 6 Pulse laser beam 7 Pulse laser beam entrance window 8 Target mounting device 9 Vacuum Vapor deposition chamber 10 Turbo molecular pump 11 Plasma 12 a-axis-facing YBa 2 Cu 3 O 7-x thin film
Claims (7)
着方法において、超伝導焼結体のターゲット表面に高速
反復率を有するパルスレ−ザを照射する高温の基板温度
で、ａ−軸背向高温超伝導膜を蒸着することを特徽とす
るａ−軸背向高温超伝導薄膜製造方法。1. A method for depositing a superconducting thin film using a pulsed laser, wherein a target surface of a superconducting sintered body is irradiated with a pulse laser having a high repetition rate at a high substrate temperature; A method for producing an a-axis back-facing high-temperature superconducting thin film, which comprises specially depositing a superconducting film.
ザはエキシマパルスレ−ザであることを特徴とする請求
項１記載のａ−軸背向高温超伝導薄膜製造方法。2. The method according to claim 1, wherein the laser irradiated to the sintered body target is an excimer pulse laser.
トは、ＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜により構成された酸化
物高温超伝導体を使用することを特徴とする請求項１記
載のａ−軸背向高温超伝導薄膜製造方法。3. The high-temperature superconductor according to claim 1, wherein the high-temperature superconducting thin film and the target of the sintered body use an oxide high-temperature superconductor constituted by a YBa 2 Cu 3 O 7-x thin film. a-Axial-facing high-temperature superconducting thin film manufacturing method.
スレーザ反復率は１０乃至１００Ｈｚ範囲内で、該ター
ゲットに照射し蒸着することを特徴とする請求項１記載
のａ−軸背向高温超伝導薄膜製造方法。4. The method according to claim 1, wherein the target is irradiated with a pulse laser having a repetition rate of 10 to 100 Hz in a range of 10 to 100 Hz. Conductive thin film manufacturing method.
囲の基板温度で、蒸着することを特徴とする請求項１記
載のａ−軸背向高温超伝導薄膜製造方法。5. The method according to claim 1, wherein the deposition is performed at a substrate temperature in a range of 700 to 800 ° C.
れるエネルギー密度が最小限1J／ｃｍ2 で、該ターゲッ
トに照射して蒸着することを特徴とする請求項１記載の
ａ−軸背向高温超伝導薄膜製造方法。6. The a-axis back-facing high-temperature super-heater according to claim 1, wherein the target is irradiated with the pulsed laser at an energy density of at least 1 J / cm 2 and the target is irradiated. Conductive thin film manufacturing method.
ｃｍの間で、蒸着することを特徴とする請求項１記載の
ａ−軸背向高温超伝導薄膜製造方法。7. The distance between the target and the thin film is 4 to 10
The method of claim 1, wherein the vapor deposition is performed for a period of about 1 cm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1996P54854 | 1996-11-18 | ||
| KR1019960054854A KR100233838B1 (en) | 1996-11-18 | 1996-11-18 | Manufacturing method of a-axis oriented high tc superconducting thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10190077A true JPH10190077A (en) | 1998-07-21 |
Family
ID=19482236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9259452A Withdrawn JPH10190077A (en) | 1996-11-18 | 1997-08-12 | Manufacture of a-axis high temperature superconductive thin film |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH10190077A (en) |
| KR (1) | KR100233838B1 (en) |
Families Citing this family (1)
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|---|---|---|---|---|
| KR101108345B1 (en) * | 2004-12-09 | 2012-01-25 | 엘지디스플레이 주식회사 | Appartus And Method for Fabricating Liquid Crystal Display Panel |
-
1996
- 1996-11-18 KR KR1019960054854A patent/KR100233838B1/en not_active IP Right Cessation
-
1997
- 1997-08-12 JP JP9259452A patent/JPH10190077A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980036296A (en) | 1998-08-05 |
| KR100233838B1 (en) | 1999-12-01 |
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