JPH10190077A - Manufacture of a-axis high temperature superconductive thin film - Google Patents
Manufacture of a-axis high temperature superconductive thin filmInfo
- Publication number
- JPH10190077A JPH10190077A JP9259452A JP25945297A JPH10190077A JP H10190077 A JPH10190077 A JP H10190077A JP 9259452 A JP9259452 A JP 9259452A JP 25945297 A JP25945297 A JP 25945297A JP H10190077 A JPH10190077 A JP H10190077A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature
- substrate
- target
- repetition rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 25
- 230000008021 deposition Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 239000002887 superconductor Substances 0.000 claims description 3
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 abstract description 29
- 239000013078 crystal Substances 0.000 abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 238000001771 vacuum deposition Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 101100264195 Caenorhabditis elegans app-1 gene Proteins 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、パルスレ−ザを利
用してYBa2 Cu3 O7-x (以下YBCOと称する)
の高温超伝導薄膜の製造方法に関し、特に高速反復率の
パルスレーザ(pulse laser)を利用したa
−軸背向YBCO薄膜製造方法に関するものである。The present invention relates to a YBa 2 Cu 3 O 7-x (hereinafter referred to as YBCO) using a pulse laser.
The present invention relates to a method for producing a high-temperature superconducting thin film, and more particularly to a method using a pulse laser having a high repetition rate.
The present invention relates to a method of manufacturing a YBCO thin film with an axis facing backward.
【0002】[0002]
【従来の技術】YBCO高温超伝導体が発見されて以
来、平面型サンドイッチ形態のジョセプソン素子或いは
トランジスタのような電子素子応用のために、この物質
を薄膜で製造することが最重要課題として認識されてき
た。特に、YBCO超G導体は結晶構造が異方性をもつ
ため、a−軸或いはb−軸に対する超伝導特性を示す電
子対の可干渉長さが、c−軸背向の可干渉長さに比して
10倍程度長い。このような理由で、超伝導薄膜の電子
素子応用の際に、a−軸或いはb−軸背向に電流が流れ
るようにすることが有利である。したがって、超伝導薄
膜の結晶背向を制御することが非常に重要である。2. Description of the Related Art Since the discovery of YBCO high-temperature superconductors, it has been recognized as a top priority to manufacture this material in a thin film for the application of electronic devices such as Josephson devices or transistors in a planar sandwich. Have been. In particular, since the YBCO super-G conductor has an anisotropic crystal structure, the coherence length of the electron pair exhibiting superconductivity with respect to the a-axis or the b-axis becomes larger than the coherence length in the c-axis backward direction. It is about 10 times longer than that. For this reason, it is advantageous to allow a current to flow in the backward direction of the a-axis or the b-axis when applying a superconducting thin film to an electronic device. Therefore, it is very important to control the crystal orientation of the superconducting thin film.
【0003】YBCO超伝導結晶のa−軸が基板表面に
垂直に成長して、a―軸背向超伝導薄膜は従来の多くの
種類の物理的蒸着法と化学的蒸着法に就いては、低温蒸
着法により製造されてきた。{J.Fujita,et
al.,J.App1.Phys.,64(3),1
290(1988).,T.Arikawa,eta
l.,J.Appl.Phys.,29(12).L2
199(1990).,Y.Q.Li,et a1.,
J.Appl.Phys.,71(5),2427(1
992).,T.Burmann,et al.,So
lid State Comm.,90(9),599
(1994)}、低温蒸着法は蒸着基板の温度をc−軸
背向YBCO薄膜が成長する温度の700℃と800℃
の間の温度よりも、100℃程度低い600℃と700
℃の間の基板温度で、a−軸背向薄膜を製造する方法で
あり、このような低温蒸着法においては0.1nm/秒
以下の低蒸着速度でa−軸背向薄膜を製造した。特に、
パルスレーザ製造方法においては、10Hz以下の低い
パルスレ−ザ反復率を使用して、比較的低い蒸着速度で
a−軸背向薄膜を製造した。{(R.K.Singh,
et al,J.Appl.Phys.,67(8),
3785(1990).,S.H.Lee,et a
l.,J.Appl.Phys.,70(10),56
61(1991}}[0003] The a-axis of a YBCO superconducting crystal grows perpendicular to the substrate surface, and the a-axis backside superconducting thin film is formed by many kinds of conventional physical vapor deposition and chemical vapor deposition. It has been manufactured by a low-temperature deposition method. {J. Fujita, et
al. , J. et al. App1. Phys. , 64 (3), 1
290 (1988). , T .; Arikawa, eta
l. , J. et al. Appl. Phys. , 29 (12). L2
199 (1990). , Y. Q. Li, et a1. ,
J. Appl. Phys. , 71 (5), 2427 (1
992). , T .; See Burmann, et al. , So
lid State Comm. , 90 (9), 599
(1994) 低温, the low-temperature deposition method sets the temperature of the deposition substrate to 700 ° C. and 800 ° C., which are the growth temperatures of the c-axis back-facing YBCO thin film
600 ° C. and 700 ° C. lower than the temperature between
This is a method for producing an a-axis back-facing thin film at a substrate temperature of between 0 ° C., and in such a low-temperature deposition method, an a-axis back-facing thin film was produced at a low deposition rate of 0.1 nm / sec or less. Especially,
In the pulsed laser manufacturing method, a-axis back-facing thin films were manufactured at relatively low deposition rates using a low pulsed laser repetition rate of 10 Hz or less. {(RK Singh,
et al, J.A. Appl. Phys. , 67 (8),
3785 (1990). , S .; H. Lee, et a
l. , J. et al. Appl. Phys. , 70 (10), 56
61 (1991)
【0004】このような低蒸着速度は、低速反復率を利
用したa−軸背向薄膜の低温蒸着法によれば、700℃
以上の高温ではa−軸背向でなく、c−軸背向YBCO
薄膜が成長し、さらに600℃以下の低温で蒸着された
a−軸背向薄膜内部には、低温のために生じた酸素の不
規則整列が発生し、YBCO高温超伝導薄膜の超伝導物
性が低下する短所がある。しかし、700℃以上の高温
において蒸着されたc−軸背向薄膜においては、酸素の
不規則整列が発生しないので、超伝導物性が良好であ
る。According to the low-temperature deposition method of the a-axis back-facing thin film using a low repetition rate, the low deposition rate is 700 ° C.
At the high temperature described above, the YBCO is not c-axis backward but c-axis back.
The thin film grows, and in the a-axis backside thin film deposited at a low temperature of 600 ° C. or less, the disordered arrangement of oxygen generated due to the low temperature occurs, and the superconducting properties of the YBCO high-temperature superconducting thin film are reduced. There are disadvantages to be reduced. However, in the c-axis back-facing thin film deposited at a high temperature of 700 ° C. or more, the disordered arrangement of oxygen does not occur, so that the superconductivity is good.
【0005】[0005]
【発明が解決しようとする課題】したがって、本発明は
パルスレーザを使用してa−軸背向YBa2 Cu3 O
7-x 薄膜を製造するにあたり、高速反復率を利用したa
−軸背向YBa2 Cu3 O7-x 高温超伝導薄膜の成長方
法を提供することにその目的がある。SUMMARY OF THE INVENTION Accordingly, the present invention provides an a-axis-backward YBa 2 Cu 3 O using a pulsed laser.
In manufacturing 7-x thin film, a using high repetition rate a
- it is an object to provide a JikuseMuko YBa 2 Cu 3 O 7-x growth method of high-temperature superconducting thin films.
【0006】[0006]
【課題を解決するための手段】上述した目的を達成する
ために本発明によるa−軸背向高温超伝導薄膜製造方法
は、超伝導焼結体のターゲット表面に高速反復率を有す
るパルスレ−ザを照射する高温の基板温度で、a−軸背
向超伝導薄膜を蒸着することを特徽とする。In order to achieve the above-mentioned object, a method of manufacturing an a-axis back-facing high-temperature superconducting thin film according to the present invention comprises a pulse laser having a high repetition rate on a target surface of a superconducting sintered body. A special feature is to deposit an a-axis back-facing superconducting thin film at a high substrate temperature for irradiating the substrate.
【0007】本発明のa−軸背向薄膜製造方法は次のよ
うに構成される。 a.YBCO薄膜蒸着時の基板の温度は700℃と80
0℃の間で保たれる。 b.YBCO薄膜蒸着時の酸素圧力は100mTorr
と300mTorrの間で保たれる。 c.ターゲットと基板間の距離は4cmと10cmの間
で保たれる。 d.YBCOターゲット表面に照射されるパルスレ−ザ
のエネルギー密度は最少限1J/cm2 である。 e.YBCOターゲット表面に照射されるパルスレーザ
の反復率は10Hzと100Hzの間で保たれる。この
ときの反復率と蒸着速度は表1の通りである。The method for manufacturing an a-axis backside thin film according to the present invention is configured as follows. a. The temperature of the substrate during the deposition of the YBCO thin film was 700 ° C and 80 ° C.
It is kept between 0 ° C. b. Oxygen pressure at the time of YBCO thin film deposition is 100 mTorr
And 300 mTorr. c. The distance between the target and the substrate is kept between 4 cm and 10 cm. d. The energy density of the pulse laser applied to the YBCO target surface is at least 1 J / cm 2 . e. The repetition rate of the pulsed laser illuminating the YBCO target surface is kept between 10 Hz and 100 Hz. Table 1 shows the repetition rate and the deposition rate at this time.
【0008】[0008]
【表1】 [Table 1]
【0009】[0009]
【発明の実施の形態】以下に、添付した図面を参照して
本発明の実施例を詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
【0010】パルスレ一ザを使用してYBCO高温超伝
導薄膜を蒸着する装置の構成図を図1に示した。真空蒸
着室(9)において円板形態のYBCO組成を有する均
―の焼結体ターゲット(1)を回転可能なターゲット取
り付け器(8)に取り付け、ターゲットの向かい側に一
定距離を置いておかれた基板加熱器(3)に取り付けら
れた酸化物単結晶基板(2)が位置する。続いて、真空
蒸着室(9)の真空度をターボ分子式ポンプ(10)を
使用して、10-6Torrの圧力で保持させる。その
後、基板加熱器(3)で基板(2)を加熱して基板の温
度を700℃と800℃間に昇温する。更に続いて、高
純度の酸素気体をガス供給ノズル(4)を通じて真空蒸
着室(9)内部に注入して100mTorrと300m
Torrの間に保持する。FIG. 1 shows the configuration of an apparatus for depositing a YBCO high-temperature superconducting thin film using a pulse laser. In a vacuum deposition chamber (9), a uniform sintered body target (1) having a disc-shaped YBCO composition was mounted on a rotatable target mounter (8), and was placed at a fixed distance from the target. An oxide single crystal substrate (2) attached to a substrate heater (3) is located. Subsequently, the degree of vacuum in the vacuum evaporation chamber (9) is maintained at a pressure of 10 -6 Torr by using a turbo molecular pump (10). Thereafter, the substrate (2) is heated by the substrate heater (3) to raise the temperature of the substrate between 700 ° C and 800 ° C. Subsequently, a high-purity oxygen gas was injected into the vacuum deposition chamber (9) through the gas supply nozzle (4) to obtain a pressure of 100 mTorr and 300 mTorr.
Hold during Torr.
【0011】次に、波長が308nmのパルス型紫外線
XeC1エクシーマレ−ザ光線(6)を、真空蒸着室
(9)の外部からターゲット(1)表面に対して45°
の角度で入射し、回転するYBCO焼結体ターゲット
(1)の表面に10Hzと100Hzの間の反復率で照
射して、プラズマ(11)を発生し、酸化物単結晶基板
(2)の表面にとどくようにしてa−軸背向YBCO超
伝導薄膜(12)を蒸着させる。Next, a pulse type ultraviolet ray XeC1 excimer laser beam (6) having a wavelength of 308 nm is applied from the outside of the vacuum evaporation chamber (9) to the surface of the target (1) at 45 °.
The surface of the oxide single crystal substrate (2) is generated by irradiating the surface of the rotating YBCO sintered target (1) at a repetition rate of 10 Hz and 100 Hz to generate a plasma (11). The a-axis backward YBCO superconducting thin film (12) is deposited.
【0012】図2は、本発明のパルスレ−ザ蒸着方法に
より基板上に製造されたa−軸背向YBa2 Cu3 O
7-x 高温超伝導薄膜の断面図である。酸化物単結晶基板
(2)の上部にa−軸背向YBCO超伝導薄膜(12)
が蒸着された構造を示す。FIG. 2 shows an a-axis backward YBa 2 Cu 3 O manufactured on a substrate by the pulse laser deposition method of the present invention.
It is sectional drawing of a 7-x high temperature superconducting thin film. A-axis YBCO superconducting thin film (12) on the oxide single crystal substrate (2)
Shows a structure in which is deposited.
【0013】本発明の第1実施例においては、回転する
YBCOターゲット表面に照射するパルスレーザ反復率
を異なるようにして、YBCO高温超伝導薄膜を蒸着す
ることに特徴がある。詳細な蒸着工程は次の通りであ
る。 蒸着基板;LaSrGaO4 (100)単結晶 蒸着基板の温度:700℃ パルスレーザ入射エネルギー密度:1 J/cm2 パルスレーザ反復率:1Hz,5Hz,10Hz,20
Hz,50Hz 基板とターゲット間の距離:4.2cm 蒸着酸素圧力:100mTorr 薄膜厚さ:100nm〜300nm パルスレ−ザ反復率を異なるようにして、蒸着したYB
CO薄膜の背向をX−線回折パターンにより分析した。
700℃基板温度において、1Hzの低い反復率で蒸着
したYBCO薄膜はc−軸背向に成長し、一方10Hz
以上の高速反復率で蒸着したYBCO薄膜はa−軸背向
に成長した。The first embodiment of the present invention is characterized in that a YBCO high-temperature superconducting thin film is deposited by changing the pulse laser repetition rate for irradiating the rotating YBCO target surface. The detailed deposition process is as follows. Vapor deposition substrate; LaSrGaO 4 (100) single crystal Temperature of vapor deposition substrate: 700 ° C. Pulse laser incident energy density: 1 J / cm 2 Pulse laser repetition rate: 1 Hz, 5 Hz, 10 Hz, 20
Hz, 50 Hz Distance between substrate and target: 4.2 cm Deposition oxygen pressure: 100 mTorr Thin film thickness: 100 nm to 300 nm Deposited YB with different pulse laser repetition rate
The back side of the CO thin film was analyzed by an X-ray diffraction pattern.
At 700 ° C. substrate temperature, YBCO thin films deposited at a low repetition rate of 1 Hz grow c-axis backward, while 10 Hz
The YBCO thin film deposited at the above high repetition rate grew backward in the a-axis.
【0014】図3より、a−軸背向薄膜の背向分率とパ
ルスレーザ反復率との関係を示した。a−軸背向分率が
100%の場合が、a−軸背向として成長した薄膜であ
り、また10Hz以上の高速パルスレーザ反復率で蒸着
したYBCOはa−軸背向薄膜に製造されることが判
る。FIG. 3 shows the relationship between the back-facing fraction of the a-axis back-facing thin film and the pulse laser repetition rate. When the a-axis backward fraction is 100%, the thin film is grown as the a-axis backward, and YBCO deposited at a high-speed pulse laser repetition rate of 10 Hz or more is manufactured as the a-axis backward film. You can see that.
【0015】本発明の第2実施例においては、50Hz
の高速反復率をYBCOターゲット表面に照射して、基
板温度を異なるようにして、a―軸背向YBCO高温超
伝導薄膜を蒸着することに特徴がある。詳細な蒸着工程
は次の通りである。 蒸着基板;LaSrGaO4 (100)単結晶 蒸着基板の温度:700℃、720℃、730℃、74
0℃、750℃ パルスレーザ入射エネルギー密度:1 J/cm2 パルスレ−ザ反復率:50Hz 基板とターゲット間の距離:4.2cm 蒸着酸素圧力:100mTorr 薄膜厚さ:100nm〜300nm パルスレ―ザ蒸着温度を異なるようにして、蒸着したY
BCO薄膜の背向をX−線回折パターンにより分析し
た。50Hzの高速反復率で蒸着した薄膜は、720℃
の温度においてもa−軸背向薄膜に成長した。しかし、
高速反復率で蒸着した薄膜と比較するために、1Hzの
低速反復率で蒸着した薄膜は、720℃の温度において
c−軸背向に成長した。In the second embodiment of the present invention, 50 Hz
The YBCO target surface is irradiated with the high-speed repetition rate described above, and the substrate temperature is changed to deposit the Y-BCO high-temperature superconducting thin film on the a-axis back. The detailed deposition process is as follows. Deposition substrate; LaSrGaO 4 (100) single crystal Temperature of deposition substrate: 700 ° C., 720 ° C., 730 ° C., 74
0 ° C., 750 ° C. Pulsed laser incident energy density: 1 J / cm 2 Pulsed laser repetition rate: 50 Hz Distance between substrate and target: 4.2 cm Deposition oxygen pressure: 100 mTorr Thin film thickness: 100 nm to 300 nm Pulsed laser deposition temperature And the deposited Y
The back side of the BCO thin film was analyzed by X-ray diffraction pattern. The thin film deposited at a high repetition rate of 50 Hz is 720 ° C.
At this temperature, an a-axis thin film was grown. But,
For comparison with films deposited at a high repetition rate, films deposited at a low repetition rate of 1 Hz grew c-axis backward at a temperature of 720 ° C.
【0016】図4に、1Hzの低速反復率と50Hzの
高速反復率で蒸着したYBCO高温超伝導薄膜のa−軸
背向分率と蒸着温度間の関係を示した。a−軸背向分率
が100%の場合a−軸背向に成長した薄膜である。a
−軸背向YBCO薄膜の成長温度が50Hzの高速反復
率で薄膜を蒸着する場合、1Hzの低速反復率で蒸着す
る場合と比べて20℃増加した。すなわち、図4よりパ
ルスレーザ反復率が高速で増加するにつれてa−軸背向
YBCO薄膜の成長温度が増加することが判る。FIG. 4 shows the relationship between the a-axis backward fraction and the deposition temperature of a YBCO high-temperature superconducting thin film deposited at a low repetition rate of 1 Hz and a high repetition rate of 50 Hz. When the a-axis backward fraction is 100%, the thin film has grown in the a-axis backward direction. a
The growth temperature of the axially-backward YBCO thin film was increased by 20 ° C. when depositing the thin film at a high repetition rate of 50 Hz compared to depositing the thin film at a low repetition rate of 1 Hz. That is, it can be seen from FIG. 4 that the growth temperature of the a-axis back YBCO thin film increases as the pulse laser repetition rate increases at a high speed.
【0017】[0017]
【発明の効果】上述した如く、本発明の高速パルスレ−
ザ反復率を利用したYBCO高温超伝導薄膜蒸着方法に
よれば、c−軸背向薄膜が成長する700℃以上の高温
においても、a−軸背向YBCO薄膜の成長が可能であ
る卓越した効果がある。As described above, the high-speed pulse laser according to the present invention is used.
According to the YBCO high-temperature superconducting thin film deposition method utilizing the repetition rate, an excellent effect that an a-axis backside YBCO thin film can be grown even at a high temperature of 700 ° C. or more at which a c-axis backside thin film grows. There is.
【図1】本発明のパルスレーザを利用したYBa2 Cu
3 O7-x 高温超伝導薄膜蒸着装置の構成図である。FIG. 1 shows YBa 2 Cu using a pulse laser according to the present invention.
It is a block diagram of a 3 O 7-x high temperature superconducting thin film deposition apparatus.
【図2】本発明のパルスレーザ蒸着方法により、基板上
に製造されたa−軸背向YBa2 Cu3 O7-x 高温超伝
導薄膜断面図である。FIG. 2 is a cross-sectional view of an a - axis-backward YBa 2 Cu 3 O 7-x high - temperature superconducting thin film manufactured on a substrate by a pulse laser deposition method of the present invention.
【図3】本発明のパルスレ−ザ反復率を異なるようにし
て蒸着したYBa2 Cu3 O7-x 薄膜のa−軸背向分率
と、パルスレーザ反復率との関係を示すグラフである。FIG. 3 is a graph showing the relationship between the a-axis backward fraction and the pulse laser repetition rate of a YBa 2 Cu 3 O 7-x thin film deposited with different pulse laser repetition rates according to the present invention. .
【図4】本発明の低速反復率と高速反復率を利用して蒸
着したYBa2 Cu3 O7-x 膜の膜のa−軸背向成長と
蒸着温度との関係を示すグラフである。FIG. 4 is a graph showing the relationship between a-axis backward growth of a YBa 2 Cu 3 O 7-x film deposited using a low repetition rate and a high repetition rate of the present invention and a deposition temperature.
1 YBa2 Cu3 O7-x 焼結体ターゲット 2 単結晶基板 3 基板加熱器 4 ガス供給ノズル 5 パルスレ−ザ集光レンズ 6 パルスレ−ザ光線 7 パルスレ―ザ光線入射窓 8 ターゲット取り付け器 9 真空蒸着室 10 ターボ分子式ポンプ 11 プラズマ 12 a−軸背向YBa2 Cu3 O7-x 薄膜Reference Signs List 1 YBa 2 Cu 3 O 7-x sintered target 2 Single crystal substrate 3 Substrate heater 4 Gas supply nozzle 5 Pulse laser condensing lens 6 Pulse laser beam 7 Pulse laser beam entrance window 8 Target mounting device 9 Vacuum Vapor deposition chamber 10 Turbo molecular pump 11 Plasma 12 a-axis-facing YBa 2 Cu 3 O 7-x thin film
Claims (7)
着方法において、超伝導焼結体のターゲット表面に高速
反復率を有するパルスレ−ザを照射する高温の基板温度
で、a−軸背向高温超伝導膜を蒸着することを特徽とす
るa−軸背向高温超伝導薄膜製造方法。1. A method for depositing a superconducting thin film using a pulsed laser, wherein a target surface of a superconducting sintered body is irradiated with a pulse laser having a high repetition rate at a high substrate temperature; A method for producing an a-axis back-facing high-temperature superconducting thin film, which comprises specially depositing a superconducting film.
ザはエキシマパルスレ−ザであることを特徴とする請求
項1記載のa−軸背向高温超伝導薄膜製造方法。2. The method according to claim 1, wherein the laser irradiated to the sintered body target is an excimer pulse laser.
トは、YBa2 Cu3 O7-x 薄膜により構成された酸化
物高温超伝導体を使用することを特徴とする請求項1記
載のa−軸背向高温超伝導薄膜製造方法。3. The high-temperature superconductor according to claim 1, wherein the high-temperature superconducting thin film and the target of the sintered body use an oxide high-temperature superconductor constituted by a YBa 2 Cu 3 O 7-x thin film. a-Axial-facing high-temperature superconducting thin film manufacturing method.
スレーザ反復率は10乃至100Hz範囲内で、該ター
ゲットに照射し蒸着することを特徴とする請求項1記載
のa−軸背向高温超伝導薄膜製造方法。4. The method according to claim 1, wherein the target is irradiated with a pulse laser having a repetition rate of 10 to 100 Hz in a range of 10 to 100 Hz. Conductive thin film manufacturing method.
囲の基板温度で、蒸着することを特徴とする請求項1記
載のa−軸背向高温超伝導薄膜製造方法。5. The method according to claim 1, wherein the deposition is performed at a substrate temperature in a range of 700 to 800 ° C.
れるエネルギー密度が最小限1J/cm2 で、該ターゲッ
トに照射して蒸着することを特徴とする請求項1記載の
a−軸背向高温超伝導薄膜製造方法。6. The a-axis back-facing high-temperature super-heater according to claim 1, wherein the target is irradiated with the pulsed laser at an energy density of at least 1 J / cm 2 and the target is irradiated. Conductive thin film manufacturing method.
cmの間で、蒸着することを特徴とする請求項1記載の
a−軸背向高温超伝導薄膜製造方法。7. The distance between the target and the thin film is 4 to 10
The method of claim 1, wherein the vapor deposition is performed for a period of about 1 cm.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960054854A KR100233838B1 (en) | 1996-11-18 | 1996-11-18 | Manufacturing method of a-axis oriented high tc superconducting thin film |
KR1996P54854 | 1996-11-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10190077A true JPH10190077A (en) | 1998-07-21 |
Family
ID=19482236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9259452A Withdrawn JPH10190077A (en) | 1996-11-18 | 1997-08-12 | Manufacture of a-axis high temperature superconductive thin film |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH10190077A (en) |
KR (1) | KR100233838B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101108345B1 (en) * | 2004-12-09 | 2012-01-25 | 엘지디스플레이 주식회사 | Appartus And Method for Fabricating Liquid Crystal Display Panel |
-
1996
- 1996-11-18 KR KR1019960054854A patent/KR100233838B1/en not_active IP Right Cessation
-
1997
- 1997-08-12 JP JP9259452A patent/JPH10190077A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR19980036296A (en) | 1998-08-05 |
KR100233838B1 (en) | 1999-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5212148A (en) | Method for manufacturing oxide superconducting films by laser evaporation | |
US5872080A (en) | High temperature superconducting thick films | |
US5968877A (en) | High Tc YBCO superconductor deposited on biaxially textured Ni substrate | |
US4912087A (en) | Rapid thermal annealing of superconducting oxide precursor films on Si and SiO2 substrates | |
US20040028954A1 (en) | High temperature superconducting thick films | |
JPH01305815A (en) | Production of superconductive oxide film using nitrogen before oxygen | |
US4874741A (en) | Non-enhanced laser evaporation of oxide superconductors | |
US5439877A (en) | Process for depositing high temperature superconducting oxide thin films | |
US5480861A (en) | Layered structure comprising insulator thin film and oxide superconductor thin film | |
JPH0577347B2 (en) | ||
JPH07267791A (en) | Production of oxide superconductor thin film and oxide superconductor thin film laminate | |
JP3144104B2 (en) | Preparation method of high quality oxide superconducting thin film | |
JPH10190077A (en) | Manufacture of a-axis high temperature superconductive thin film | |
US6194353B1 (en) | Process for preparing superconducting thin film formed of oxide superconductor material | |
US4981839A (en) | Method of forming superconducting oxide films using zone annealing | |
JPH01224297A (en) | Production of metal oxide superconductor material layer | |
JPH04182317A (en) | Formation of oxide superconducting thin film | |
US5438037A (en) | Method for depositing another thin film on an oxide thin film having perovskite crystal structure | |
KR970009739B1 (en) | Method of manufacture for superconductor thin film | |
JP2817299B2 (en) | Preparation method of composite oxide superconducting thin film | |
JPH0196015A (en) | Formation of superconducting thin film | |
US4950644A (en) | Method for the epitaxial preparation of a layer of a metal-oxide superconducting material with a high transition temperature | |
KR100240861B1 (en) | Process for depositing high temperature superconducting oxide thin films | |
JP3240686B2 (en) | Method for producing high-quality oxide superconducting thin film and superconducting junction | |
JPH01100816A (en) | High temperature superconducting material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20041102 |