JPH10176264A - Sputtering target for forming dielectric thin coating - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering target for forming dielectric thin coating capable of forming dielectric thin coating having uniform electric properties and small in the adhesion of foreign matter. SOLUTION: This sputtering target for forming dielectric thin coating is the Perovskite type integrally formed one expressed by the formula of ABO3 , and in which B contains at least titanium(Ti), the relative density is regulated to 95%, and the diameter is regulated to 300 to 500mm. As A, lead (Pb) is preferably used, and B preferably contains zirconium(Zr). Moreover, the surface roughness (RY) of the target is regulated to <=10μm by wet grinding and polishing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a sputtering target for forming a dielectric thin film used for a semiconductor device such as an LSI memory.

[0002]

2. Description of the Related Art In recent years, with the high integration of memory cells in LSI memories and the like, it has been demanded to use a material having a large relative dielectric constant as a dielectric. As a preferable material, for example, a ferroelectric material such as PZT is used. It has been proposed to use the body.

[0003] Conventionally, such ferroelectrics are produced, for example, by a normal pressure sintering method (Cip and Sinter), a hot isostatic pressing method (Heat Isotropic pressing method).
This method is obtained by forming a target by an ostatic pressing, a hot pressing method or the like, and forming a thin film on a substrate by sputtering using the target.

[0004]

However, in the case of such a conventional sputtering target, it is difficult to form a dielectric thin film having uniform electric characteristics on a semiconductor substrate such as a Si wafer. there were.

In particular, in recent years, the diameter of a semiconductor substrate has been increasing. However, when a dielectric thin film is formed on a substrate using a conventional sputtering target, the remanent polarization value decreases at the peripheral portion of the substrate. There was a problem of doing.

Further, in the case of the conventional sputtering target, especially in the case of a split type, there is also a problem that foreign substances called particles tend to adhere to the film formation due to the generation of particles or chips at the butted portions. Was.

The present invention has been made in order to solve the problems of the prior art, and has a uniform electric characteristic.
It is another object of the present invention to provide a sputtering target for forming a dielectric thin film capable of forming a dielectric thin film with less adhesion of foreign matter.

[0008]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies to solve the above-mentioned problems, and as a result, it has been found that a high-density sputtering target and a large-diameter integrated sputtering target are formed. The electrical characteristics of the dielectric thin film become uniform,
In addition, the inventors have found that the adhesion of foreign matter is reduced, and have completed the present invention.

The invention according to claim 1 based on this finding is a perovskite-type sputtering target represented by the chemical formula ABO ₃ , wherein B contains at least titanium (Ti) and has a relative density (from the crystal structure). (The actual density with respect to the derived theoretical density) is 95% or more, and the diameter is 300 mm or more and 500 mm or less.

In this case, as in the second aspect of the present invention,
In the invention according to claim 1, A contains at least lead (P
b), lanthanum (La), barium (Ba), strontium (Sr), sodium (Na) or calcium (Ca), and B contains at least titanium (Ti), zirconium (Zr), cobalt ( C
o), tantalum (Ta), nickel (Ni), bismuth (Bi), antimony (Sb), niobium (Nb), tin (Sn) or iron (Fe) is also effective. .

Particularly, as in the third aspect of the present invention, in the first aspect of the present invention, it is most effective when A is lead (Pb) and B contains zirconium (Zr).

Further, as in the invention according to the fourth aspect, in the invention according to the third aspect, the content of lead (Pb) is 0.05 to 0.5%.
5 mol, preferably 0.1 to 0.2 mol, is added, and it is also effective when the accuracy of the concentration distribution in the target is ± 0.01 mol, preferably ± 0.005 mol or less.

On the other hand, as in the invention described in claim 5, the invention described in any one of claims 1 to 4 is also effective when the sputtering target is an integral molding.

Further, as in the invention according to claim 6, in the invention according to any one of claims 1 to 5, the target has a surface roughness (RY) of 10 μm or less, preferably 5 μm or less.
It is also effective when it is less than μm.

[0015] In the case of the invention according to any one of claims 1 to 3 having such a structure, the relative density is 95% or more and the diameter is as large as 300 mm or more. Reaches the entire area of the substrate in a uniform state without being dispersed, and a ferroelectric thin film is formed in a uniform state. As a result, according to the present invention, the decrease in the remanent polarization value at the peripheral portion of the substrate unlike the conventional one does not occur, and the ratio of foreign matter mixed in is relatively reduced.

In this case, as in the third aspect of the present invention,
In the invention according to claim 1, A is lead (Pb),
When B zirconium (Zr) is contained, in particular, as described in claim 4, 0.05 to 0.5 mol, preferably 0.1 to 0.2 mol of lead (Pb) is added, and A more uniform ferroelectric thin film is formed when the accuracy of the concentration distribution is ± 0.01 mol, preferably ± 0.005 mol or less.

On the other hand, in the third aspect of the present invention, when the amount of lead (Pb) added is less than 0.05 mol, the remanent polarization value at the terminal edge of the substrate is reduced. Similarly, the remanent polarization value at the end of the substrate decreases.

In the invention according to any one of the first to fourth aspects, as in the invention according to the fifth aspect, when the sputtering target is an integral molding, the sputtering target can be divided into two parts at the time of sputtering. As in the case, there is no generation of particles or chips in the butted portion.

The sputtering target for forming a dielectric thin film according to the present invention is preferably manufactured, for example, by the following method.

First, a sintering step is performed using a powder whose particle size is controlled by calcining and pulverizing raw materials to be used. That is,
The filling rate of particles is increased by filling the space of large particles with small particles. In particular, for a PZT target, it is preferable to use a raw material whose particle size of the PbO powder is controlled to be smaller than that of the PZT powder.

In the present invention, it is preferable to use a hot press method. In other words, since vacuum hot pressing is sintering in a vacuum, the internal residual space (closed pore) contains only a vacuum or a vapor of a constituent element of a target, and a method of expecting a high-purity product one of. It is preferable to use a carbon die for the mold and the pressing mold in the furnace. Then, the inside of the carbon mold is lined with, for example, a carbon sheet to form a closed space (closed space), so that the evaporation of the PZT raw material and the PbO raw material in the sintering process is suppressed as much as possible.

Further, the sintering is preferably performed at a temperature low enough to melt the raw material powder. In particular, hot pressing after embedding PZT and PbO powder is performed at about 900 ° C. just above the melting point of PbO (880 ° C.). Even at this low temperature, the PbO, ZrO ₂ , and TiO ₂ raw materials are previously converted into PZT powder in the calcining step and the pulverizing step, so that liquid phase sintering with excessively added lead oxide is possible.

In addition, in the uniaxial pressing type hot press, if such a liquid phase is used, the whole is uniformly pressed, and the density can be easily increased even for a large product having a diameter of 300 mm or more. be able to. In particular, in a vacuum hot press, a dense PZT target having a density of 95% or more and having no open pores can be obtained by performing curing so as to minimize the evaporation of the constituent elements described above.

Regarding the size of the target, in the case of the oxide target as in the present invention, when the thickness is 8 mm or more, heat is generated on the sputtering surface, while the cooling efficiency from the opposite cooling surface side is lower than that of the metal target. Since it is not good compared with the case, heat is accumulated, and the danger of peeling, cracking, etc. of the target increases.

On the other hand, since it is an oxide target, if it is 3 mm or less, in addition to being difficult to manufacture, it is easily cracked from the viewpoint of strength. Further, it is not practical in terms of target use efficiency. Therefore, the thickness of the target is preferably between 3 mm and 8 mm.

On the other hand, regarding the diameter of the target, 25
If it is a disk-shaped product having a diameter of 0 mm or less, a high-density sintered product can be obtained relatively easily. However, although a product having a thickness of 300 mm or more is desired, a conventional high-density product can be obtained. Not.

In particular, in the case of the split type of two or more, undesired phenomena such as generation of particles or chipping at the abutting portion appear in the film formation by sputtering, so that an integrated target is desired. I have.

According to the above-mentioned method, a high-density product having a diameter of 300 mm or more can be obtained. In particular, in the case of the present invention, since a liquid phase is used, it is possible to produce a high-density one up to 500 mm in diameter. However, it is difficult to produce a monolithic material having a diameter larger than that at a high density due to the relationship with the thickness.

By the way, in this type of target, a relative density of 95% and a higher density of 5%
Although there is an internal space smaller than this, this is called a closed pore, and it is known that it is a closed space independent of the outside.

On the other hand, at a low density of less than 95%, a space of 5% or more is connected to the outside and exists.
This is called an open pore. This means that in the target of the integrally molded article, if the content is 95% or less, adsorption of moisture and the like occurs not only on the surface but also inside. In addition, when a liquid is used for grinding or cleaning the target surface, the type, purity, and use conditions of the liquid are limited. That is, in a high-purity target, introduction of a wet process is impossible at a low density of about 85% relative density.

According to the polishing process, even if a minute crack is generated in the previous step, it can be removed. The surface condition of the target has a great influence on the film formation by sputtering. In particular, since the surface state of the target is strongly reflected in the initial stage of sputtering, it is basically preferable that the target is in the same state as the inside of the target. Therefore, the smaller the surface roughness, the better
Maximum height at the surface normally obtained by cutting (JI
It is defined by RY in SB0601. ), That is, the height from the valley bottom to the peak is approximately 50 to 100 μm, but it is preferable that the height is 10 μm or less for a sputtering target.

In the case of the present invention, as described above, since the relative density is 95% or more and there is no open bore, wet grinding and polishing can be performed.

According to the wet grinding and polishing, as in the sixth aspect of the present invention, in the first aspect of the present invention, the target has a surface roughness (RY) of 10 μm. The thickness can be set to 5 μm or less, and the thickness of the work-affected layer can be reduced.

[0034]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a sputtering target for forming a dielectric thin film according to the present invention will be described below in detail with reference to the drawings.

FIG. 1 schematically shows an example of a manufacturing process of a PZT target according to the present embodiment. First,
Upon fabricating the PZT target _{Pb 1.1 (Zr 0.5 Ti 0.5)} O 3.1, PbO, the powder material ZrO ₂ and TiO _2, prepared so as to have a desired composition, mixing these raw materials may (Step 1).

Next, this powdery raw material is
After calcining in air at a temperature of about 00 ° C. (Step 2), the mixture is pulverized to prepare a predetermined amount of PZT powder. 0.1
Molar PbO is added and mixed well (step 3) to obtain a raw material powder before firing. Then, the raw material powder is set in a carbon mold, and the raw material powder is subjected to main firing by a vacuum hot press method as described below (step 4).

FIG. 2 shows a vacuum hot press apparatus for performing firing in the present embodiment. The vacuum hot press apparatus 1 has a pair of upper and lower hot presses 2 and 3 in a vacuum vessel 1A, and is connected to a vacuum exhaust system (not shown) via a vacuum valve 4. A heating device (not shown) is provided in the vacuum vessel 1A.

As shown in FIGS. 2A and 2B, a hollow cylindrical molding die 5 made of carbon and a disk-shaped bottom die 6 made of carbon having the same diameter as the molding die 5 are prepared. Then, the bottom mold 6 is set on the lower mold hot press 3, and the forming mold 5 is set on the bottom mold 6. At this time, the upper hot press 2 is raised.

Then, on the surface of the bottom mold 6, a thickness of about 0.5
A carbon foil (carbon sheet) 7 of about 3 mm, preferably about 2 mm is lined, and a carbon sheet 8 is also arranged on the inner wall of the mold 5 over the entire circumference. Are arranged to overlap.

Further, the raw material powder 1 is placed in the space of the molding die 5.
After filling with 0, a part of the carbon sheet 9 is placed on the upper side of the raw material powder 10 so as to overlap with the carbon sheet of the inner wall 1 of the mold 5.

That is, as shown in FIG. 2 (c), the raw material powder 10 is completely wrapped by the carbon sheets 7, 8, 9. Then, the carbon-type upper plate 11 is placed on the carbon sheet 9 and the upper hot press 2
Is lowered, and the distance between the upper and lower hot presses 2 and 3 is 20 to 50.
A vacuum hot press is performed at a temperature of about 900 to 1000 ° C. for about 2 hours by a heating device (not shown) while maintaining a pressurized state of about MPa to produce a disc-shaped sintered body. In this vacuum hot press, the pressure in the vacuum vessel 1A is maintained at about 10 ^-1 Pa.

Thereafter, the surface of the target thus obtained is subjected to wet grinding and polishing to increase the flatness (step 5) and obtain the desired target (step 6).

According to the method of the present embodiment as described above, the carbon sheet 7 of the bottom die 6 and the molding die 5
By improving the airtightness by 8 and 9, evaporation of lead oxide (PbO) is suppressed as much as possible, and a sintered body having almost the same composition as the charged raw material can be obtained.

According to such a method, the relative density is 95%.
% Or more, and a large-diameter sputtering target with a diameter of 300 mm or more can be manufactured. According to such a sputtering target, the atoms of PZT reach the entire region of the substrate in a uniform state without being dispersed during sputtering. As a result, a decrease in the remanent polarization value at the peripheral portion of the substrate unlike the conventional one does not occur, and P
A ZT thin film can be formed. In addition, since the proportion of foreign matter mixed is relatively reduced, foreign matter on the film can be significantly reduced.

On the other hand, according to the present embodiment, a large-diameter sputtering target formed by integral molding can be obtained. Therefore, during sputtering, particles or chips are not generated at the abutting portions as in the case of the split mold. Film formation with less foreign matter can be performed.

[0046]

EXAMPLES Examples of the sputtering target for forming a dielectric thin film according to the present invention will be described below in detail along with comparative examples.

EXAMPLE A PZT target Pb _1.1 (Zr _0.5 Ti _0.5 ) O _3.1 was produced by the method described below.

First, the powdery raw materials of PbO, ZrO ₂ , and TiO ₂ are made to have a composition of Pb (Zr _0.5 Ti _0.5 ) O ₃ , that is, PbO: ZrO ₂ : TiO ₂ = 1 (mol): 0.5.
(Mol): An amount of each powder raw material corresponding to 0.5 (mol) was prepared. And these materials are mixed well, and about 100
After air calcination at a temperature of 0 to 1300 ° C., pulverizing,
About 10 kg of PZT powder was obtained.

To this powder, 0.1 mol of PbO powder was added and mixed well to obtain a raw material powder before firing. As shown in FIGS. 2 (b) and 2 (c), the raw material powder is completely wrapped by carbon sheets 7, 8 and 9 having a thickness of about 2 mm. It was set in the space of the mold 5 installed on the mold 6. The mold 5 used had an inner diameter of 350 mm.

Then, a carbon-type upper plate 11 is placed from above the carbon sheet 9, the upper hot press 2 is lowered from above, and the space between the upper and lower hot presses 2, 20-
While maintaining the pressurized state at 50 MPa, vacuum hot pressing was performed at a temperature of about 900 to 1000 ° C. for about 2 hours by a heating device (not shown) to produce a disc-shaped sintered body. The pressure in the vacuum vessel 1 in the vacuum hot press is about 10 ^-1.
Pa.

The obtained target had a diameter of 330 m.
m and a thickness of 6 mm, and the density was 95% (high relative density). The surface of the target was subjected to wet grinding and polishing to increase the flatness. For this target, the surface roughness (R
When Y) was measured, it was at most 5 μm.

When the surface of this target was analyzed by an X-ray diffraction method, a PZT crystal system and a peak of excess lead were observed in the diffraction image.

In this sintering step, the vaporization of lead oxide is suppressed as much as possible by the improvement of the airtightness of the mold and the die in the furnace by the carbon sheet, and a sintered body having substantially the same composition as the charged raw material is obtained.

FIG. 3 shows the distribution of lead oxide on the surface and inside of the PZT target formed by the method of this embodiment. In this case, a disk-shaped PZT target having a diameter of 350 mm and a thickness of 8 mm was prepared as a PZT target, and on the surface thereof, a central part of the target and a total of five places ± 80 mm and ± 160 mm apart from the central part in the diameter direction. At the point, a range of 20 mm in diameter and 2 mm in thickness was cut out to obtain an analysis sample.

Further, in order to confirm the distribution of lead oxide inside the target, the surface of the above-mentioned target was shaved by 3 mm to a thickness of 5 mm, and at the above-mentioned five points, a range of 20 mm in diameter and 2 mm in thickness was cut out. A sample for analysis was collected. In this way, the distribution of lead oxide on the surface of the target and inside the half of the target thickness is determined by IC
It was analyzed and evaluated by P analysis.

In this embodiment, the case where 0.1 mol of lead oxide is added, that is, the case where 1.1 mol of PbO is present as a whole, as shown in FIG. It is understood that a lead oxide distribution with good uniformity within ± 0.01 mol was obtained.

FIG. 4A shows an electron micrograph of a cross section of the sample near the surface of the target.

FIG. 5 is a view showing a structure obtained by using the target of this embodiment.
It shows the number of foreign substances attached when a PZT thin film is formed on an inch-size Si wafer. As shown in FIG. 5, in the case of the present embodiment, the number of foreign substances called particles adhering on the Si wafer was very small, on average about 10 particles.

FIGS. 6A and 6B are explanatory views showing a method for measuring the electrical characteristics of a PZT thin film formed on a Si wafer using the target of this embodiment. FIG. 6 (a)
As shown in the figure, the entire surface of the 6-inch Si wafer 12 is sputtered to a thickness of 100 to 200 n.
An electrode 13 made of platinum (Pt) having a thickness of 200 m was formed, and a PZT thin film 14 having a thickness of 200 to 300 nm was formed on the entire surface of the electrode 13 by sputtering using the target of this example.

Further, as shown in FIGS. 6A and 6B,
On the PZT thin film 14, they are arranged in the diameter direction, and
Electrodes 15 made of platinum (Pt) having a thickness of 100 to 200 nm were formed at positions (1 to 5) passing through the center by sputtering. Then, the residual polarization value Pr (μc / cm ² ) at each position was measured. FIG. 7 shows the result.

As shown in FIG. 7, the remanent polarization value at each position on the Si wafer 12 was stable at about 20 μc / cm ^2, and no difference was observed between the positions. Therefore,
It has been clarified that the sputtering target of this example can form a PZT thin film having uniform electric characteristics.

Comparative Example 1 A PZT target Pb _1.1 (Zr _0.5 Ti _0.5 ) O _3.1 was prepared by the method described below.
Was prepared.

First, as in the case of the above embodiment, Pb
Powdered raw materials of O, ZrO ₂ and TiO ₂ are converted to Pb (Zr _0.5 Ti
_0.5 ) O ₃ , that is, PbO: ZrO ₂ :
Each powder raw material was prepared in an amount corresponding to TiO ₂ = 1 (mol): 0.5 (mol): 0.5 (mol). Then, these raw materials were mixed well, calcined in the air at a temperature of about 1000 to 1300 ° C., and then pulverized to obtain about 10 kg of PZT powder.

To this powder, 0.1 mol of PbO powder was added and mixed well to obtain a raw material powder before firing. This raw material powder was formed into a carbon sheet 7 in the same manner as in the above embodiment.
With the raw material powder completely wrapped by 8, 9,
Inner diameter 35 installed on bottom mold 6 on lower mold hot press 3
It was set in the space of a mold 5 of 0 mm.

Then, a carbon-type upper plate 11 is placed from above the carbon sheet 9 and the pressure in the vacuum vessel 1 is reduced by about 10
^-1 Pa, the upper hot press 2 from above the upper plate 11
Is lowered, and the distance between the upper and lower hot presses 2 and 3 is 20 to 50.
While maintaining the pressurized state of MPa, vacuum hot pressing was performed at a temperature of about 850 to 870 ° C. for about 2 hours by a heating device (not shown) to produce a disc-shaped sintered body.

The target thus obtained was an integral body having a diameter of 330 mm and a thickness of 6 mm, but had a low density (relative density) of 85%.

Since the surface of the target could not be wet-ground, it was cut and finished. When the surface roughness (RY) of this target was measured by a surface roughness meter, the maximum value was 70 μm, which was considerably larger than that of the example.

On the other hand, when the surface of this target was analyzed by the X-ray diffraction method, a PZT crystal system and a peak of excess lead were observed in the diffraction image.

FIG. 4B shows an electron micrograph of a cross section of the sample near the surface of the target.

When a film was formed on a 6-inch Si wafer by using this target under the same conditions as in the embodiment, as shown in FIG. 5, the number of foreign substances adhering to the Si wafer was an average. There were very many at about 50.

On the other hand, as shown in FIGS. 6A and 6B, the remanent polarization Pr (μc / cm ² ) at each position was measured by the same method as in the above embodiment, and as shown in FIG. In addition, in a portion near the outer periphery of the Si wafer 12, the remanent polarization value Pr tends to be low, and non-uniformity of electric characteristics in the wafer has been recognized.

[Comparative Example 2] PZT was prepared by a normal pressure sintering method.
Target _{Pb 1.1 (Zr 0.5 Ti 0.5)} O 3.1 was produced.
This target was an integral body having a diameter of 330 mm and a thickness of 6 mm, but had a density (relative density) of 75%.

When a film was formed on a 6-inch Si wafer using the same target under the same conditions as in the above embodiment, as shown in FIG. 5, the number of foreign substances adhering to the Si wafer was on average. There were very many, about 100.

As shown in FIGS. 6A and 6B, the remanent polarization Pr (μc / cm ² ) at each position was measured by the same method as in the above embodiment, and as shown in FIG. In addition, the remanent polarization value Pr tends to be lower in a portion near the outer periphery of the Si wafer 12, and the remanent polarization value Pr is smaller than that in the case of Comparative Example 1 in which the relative density is 85%. The non-uniformity of the electrical characteristics was observed.

[0075]

As described above, the relative density is 95%.
According to the sputtering target according to the present invention having a diameter of 300 mm or more and 500 mm or less, during sputtering, the atoms of the ferroelectric material reach the entire region of the substrate in a uniform state without being dispersed. The lowering of the remanent polarization value at the peripheral portion of the substrate such as a substrate does not occur, and a ferroelectric thin film having uniform electric characteristics can be formed.

Further, according to the present invention, the proportion of foreign matter mixed in during sputtering is relatively reduced, so that foreign matter on the film can be significantly reduced.

Further, according to the present invention, a large-diameter sputtering target formed by integral molding can be obtained. Therefore, during sputtering, particles and chips are not generated at the abutting portions as in the case of the split mold, and foreign matter is not generated. A small amount of film can be formed.

Furthermore, according to the present invention, by setting the surface roughness (RY) of the target to 10 μm or less,
The work-affected layer can be kept thin, and the uniformity of film formation can be improved.

As described above, according to the present invention, the production yield in forming a dielectric thin film by sputtering can be greatly improved.

[Brief description of the drawings]

FIG. 1 is a process diagram showing an outline of an example of a manufacturing process of a PZT target according to an embodiment of the present invention.

FIG. 2A is a schematic configuration diagram showing a vacuum hot press apparatus for performing main firing in the embodiment. FIG. 2B is a perspective view showing a molding die and a bottom mold of raw material powder in the embodiment. c): Explanatory drawing showing a state in which the raw material powder is wrapped in the embodiment.

FIG. 3 is a graph showing the distribution of lead oxide on the surface and inside of a PZT target according to an example of the present invention.

4A is an electron micrograph showing a particle structure near the surface of a PZT target according to an example of the present invention. FIG. 4B is an electron micrograph showing a particle structure near the surface of a PZT target according to a comparative example of the present invention. Micrograph

FIG. 5 shows an example of using a PZT target according to an embodiment of the present invention.
Graph showing the number of foreign substances attached when a PZT thin film is formed on an inch-size Si wafer

FIGS. 6A and 6B are explanatory diagrams showing a method of measuring the electrical characteristics of a PZT thin film formed on a Si wafer using the PZT target of the same embodiment. FIG. 6A is a front view, and FIG. Plan view

FIG. 7 is a graph showing electrical characteristics of a PZT thin film formed on a Si wafer using the PZT targets of the example and the comparative example.

[Explanation of symbols]

1. Vacuum hot press machine 1A Vacuum container
2 Upper hot press 3 Lower hot press 5 Mold 6 Bottom mold 7, 8, 9 Carbon sheet 10 Raw material powder 11 Upper plate 12 Si wafer 13, 15 …… Platinum electrode 14 …… PZT thin film

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI H01L 21/31 C04B 35/49 A (72) Inventor Hisayuki Kato 5-20-1, Kamizuhoncho, Kodaira-shi, Tokyo Hitachi, Ltd. Inside the factory (72) Inventor Masahiro Kodera 516 Vacuum Metallurgical Co., Ltd.Yamata-machi, Yamatake-gun, Chiba Prefecture (72) Inventor Masaharu Oshiro 516 Vacuum Metallurgical Co., Ltd. Yoshiharu 516 Yokota, Sanmu-cho, Sanmu-gun, Chiba Pref. UMAT Co., Ltd.

Claims (6)

[Claims] 1. A perovskite sputtering target represented by the chemical formula ABO ₃ , wherein B contains at least titanium (Ti) and has a relative density of 95.
% And a diameter of 300 mm or more and 500 mm or less, a sputtering target for forming a dielectric thin film. 2. A is at least lead (Pb) and lanthanum (L
a), barium (Ba), strontium (Sr), sodium (Na) or calcium (Ca), and B contains at least titanium (Ti), zirconium (Zr), cobalt (Co), tantalum ( Ta),
Nickel (Ni), bismuth (Bi), antimony (S
2. The sputtering target for forming a dielectric thin film according to claim 1, wherein the sputtering target contains any one of b), niobium (Nb), tin (Sn) and iron (Fe). 3. The sputtering target according to claim 1, wherein A is lead (Pb) and B contains zirconium (Zr). 4. The dielectric thin film according to claim 3, wherein 0.05 to 0.5 mol of lead (Pb) is added, and the accuracy of the concentration distribution in the target is ± 0.01 mol or less. For sputtering target. 5. The sputtering target for forming a dielectric thin film according to claim 1, wherein the sputtering target is an integral molding sputtering target. 6. The target has a surface roughness (RY) of 10 μm.
The sputtering target for forming a dielectric thin film according to claim 1, wherein: