JPH10172119A - Magneto-resistive head and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To sufficiently increase the restraining force for forming a magneto- resistance effect film as a single domain by making the exchange bonding magnetic field with the magneto-resistance effect film higher, further, to eliminate the Barkhausen jump noises generated at the time of reproducing recording information and to enhance performance and reliability. SOLUTION: A soft magnetic field film 12, a nonmagnetic spacer film 13, the magneto-resistance effect film 14, antiferromagnetic films 15 (15a to 15c) and electrode films 16a to 16c are successively laminated on a substrate 11. The prescribed regions of the antiferromagnetic film 15 and the electrode films 16a to 16c are cut away to form a magnetic reluctance sensor working region Tw where the magneto-resistance effect film 14 is exposed. The magneto- resistance effect film 14 and the antiferromagnetic films 15 are subjected to exchange bonding at their boundaries. In addition, the antiferromagnetic films 15 are formed by thin films consisting of nickel-manganese-oxygen.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head for reading information from a magnetic recording medium and a method of manufacturing the same, and more particularly, to at least a soft magnetic film,
The present invention relates to a magnetoresistive head in which a nonmagnetic spacer film, a magnetoresistive film, an antiferromagnetic film, and an electrode film are sequentially laminated, and a method of manufacturing the same.

[0002]

2. Description of the Related Art A method for detecting magnetically recorded information using a magnetoresistive sensor has been well known in the past, and is used as a magnetoresistive head in a high-density magnetic disk storage device or the like. It is getting. Here, as a material of the magnetoresistive effect sensor, a NiFe alloy (permalloy) film, a NiFeCo alloy film, or the like, which is a magnetoresistive effect film, is generally used.

At that time, a lateral bias magnetic field is applied to use the sensor in a linear operation region, and a longitudinal bias is used to suppress noise caused by a multi-domain structure of magnetization called Barkhausen jump noise. It is desirable to apply a magnetic field to the magnetoresistive film.

As a general method of applying a lateral bias magnetic field, there is a soft film bias method, in which the magnetization of a soft magnetic film laminated on a magnetoresistive film via a non-magnetic spacer film flows through the magnetoresistive film. The magnetic field generated by the information detection current is used to direct the magnetization of the magnetoresistive film to an appropriate angle (preferably 90 degrees) and apply a bias magnetic field by a leakage magnetic field from the magnetization.

As a specific means for applying a longitudinal bias magnetic field, as shown in FIG. 12, a soft magnetic lateral bias film 502, a non-magnetic spacer film 503 and a magnetoresistive effect film 504 are sequentially laminated to form a magnetoresistive effect. The antiferromagnetic longitudinal bias film 50 is exchange-coupled with the magnetoresistive effect film 504 on both sides of the film 504 except for the magnetoresistive sensor operation region Tw.
5a, 505b are provided, and then the electrode films 506a, 505b are provided.
06b is disclosed in JP-A-62-140610.

This is because the anti-ferromagnetic longitudinal bias film 505a,
The two end regions of the magnetoresistive film 504 that are in contact with 505b are made into single magnetic domains using exchange coupling force, and the magnetostatic coupling along the magnetoresistive film 504 causes the center to become the magnetoresistive sensor operating region Tw. This is a technique for inducing a single magnetic domain state even in a club.

However, in this method, a vertical bias is applied to the magnetoresistive film 504, but a vertical bias is applied to the soft magnetic film 502 for the purpose of applying a horizontal bias to the magnetoresistive film 504. However, in this method, magnetic disturbance such as multi-domain formation of the soft magnetic film 502 and reversal of magnetization due to an external magnetic field is likely to occur. Further, due to the magnetic disturbance of the soft magnetic film 502,
There is a disadvantage that Barkhausen jump noise is induced when reproducing recorded information.

[0008] In JP-A-7-57223,
As shown in FIG. 13, the soft magnetic film 602, the non-magnetic spacer film 603, and the magnetoresistive film 604 substantially exist only in the sensor operation region Tw, and the ferromagnetic films 605a and 605b and the antiferromagnetic film serve as a longitudinal bias. A ferromagnetic / antiferromagnetic exchange bias film composed of two layers 606a and 606b is laminated so as to cover one end of each of the soft magnetic film 602, the nonmagnetic spacer film 603, and the magnetoresistive film 604,
In addition, the ferromagnetic films 605a and 605b are
A magnetoresistive head having a structure formed adjacently to each other so as to have magnetic and electrical continuity with one end of each of the magnetic heads is disclosed. Here, reference numerals 607a,
Reference numeral 607b denotes an electrode film.

Specific examples of the material of the antiferromagnetic film used as the antiferromagnetic longitudinal bias film and the antiferromagnetic exchange bias film include FeMn, NiMn, IrMn, and NiO.
And Fe There are ₂ O ₃ or the like, still further to be able to satisfactorily more corrosion resistance the addition of Cr in NiMn is, JP-A-6-
76247.

[0010]

However, in the above-mentioned antiferromagnetic film, the exchange coupling magnetic field with the magnetoresistive effect film is generally relatively small, and the temperature at which the exchange coupling magnetic field disappears (blocking temperature). ) Is also low. On the other hand, the antiferromagnetic film made of NiMn has a relatively large exchange coupling magnetic field and a high blocking temperature, but requires a high-temperature and long-time heat treatment in manufacturing, and thus has low productivity and low manufacturing cost. Had the disadvantage of being higher.

A metallic antiferromagnetic film, FeM
n, NiMn, IrMn, and the like have a disadvantage that they are easily rusted and have poor corrosion resistance.

On the other hand, the corrosion resistance can be improved by adding Cr to NiMn.
As is clear from Japanese Patent No. 6247, addition of Cr to NiMn causes a phenomenon that the exchange coupling magnetic field decreases. When the exchange coupling magnetic field decreases, the binding force for converting the magnetoresistive effect film into a single magnetic domain weakens,
The risk of inducing Barkhausen jump noise when reproducing recorded information is increased, and the performance as a head is deteriorated and the reliability is also lowered.

An oxide antiferromagnetic film Fe ₂ O
_{The three} films have a relatively large exchange coupling magnetic field and are excellent in corrosion resistance because they are oxides, but they require high-temperature heat treatment during manufacture, and the structure of the Fe ₂ O ₃ film depends on the material of the underlayer. There was a problem that manufacturing was difficult, for example, the characteristics were changed.

[0014]

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above-mentioned drawbacks, and has a large exchange coupling magnetic field with a magnetoresistive film, a high blocking temperature, excellent corrosion resistance, and an antiferromagnetic material which is easy to manufacture. By using the film as an antiferromagnetic longitudinal bias film and an antiferromagnetic exchange bias film, the binding force for converting the magnetoresistive effect film into a single magnetic domain is sufficiently strong, and furthermore, Barkhausen jump noise generated when reproducing recorded information. It is an object of the present invention to provide a magnetoresistive head having no performance and high performance and reliability and a method of manufacturing the same.

[0015]

In order to achieve the above-mentioned object, the present invention employs, as described above, the contents described in claims 1 to 50 as its essential parts.

According to the present invention, at least a soft magnetic film, a non-magnetic spacer film, a magnetoresistive film, an antiferromagnetic film and an electrode film are sequentially laminated on a substrate. A magnetoresistive sensor operating region is provided in which a predetermined region of the antiferromagnetic film and the electrode film is cut away to expose a magnetoresistive film. The magnetoresistive film and the antiferromagnetic film are exchange-coupled at the interface, and the antiferromagnetic film is formed of a thin film made of nickel-manganese-oxygen.

Here, in the antiferromagnetic film, nickel is in the range of 40 to 55 atomic percent, manganese is in the range of 40 to 55 atomic percent, and oxygen is in the range of 1 to 10 atomic percent. It may be a thin film composed of nickel-manganese-oxygen in the range of the atomic percentage.

The antiferromagnetic film has a nickel content of 48.
A thin film of nickel-manganese-oxygen in which the atomic percentage is in the range of 52 to 52 atomic percent, manganese is in the range of 45 to 50 atomic percent, and oxygen is in the range of 1 to 5 atomic percent It may be. Further, the antiferromagnetic film may have a face-centered square structure in at least a part thereof.

As a method of manufacturing the above-described magnetoresistive effect head, a usual method is employed. In addition, for the above-described antiferromagnetic film, argon gas or oxygen gas of 10% or less in argon gas is used. Is sputtered in an atmosphere of a mixed gas to which is added.

Here, after forming the magnetoresistive film,
It is preferable that the surface of the region in contact with the antiferromagnetic film is etched, and then the antiferromagnetic film is formed. In this case, the etching is
It is characterized in that it consists of beam etching. Also,
In this etching, the magnetoresistive effect film is set at 1 to 10 nanometers.

Further, in the manufacturing process after the formation of the antiferromagnetic film, a heat treatment is performed. In this case, the heat treatment is performed at least once at a temperature of 200 ° C. to 300 ° C.
It is carried out under the conditions of time to 20 hours. This heat treatment may also be performed in a magnetic field in the range from 10 Oerst to 3000 Oersts.

(Inventions of Claims 12 to 25)
In another magnetoresistive head according to the present invention, at least a soft magnetic film,
A non-magnetic spacer film, a magneto-resistive film, an anti-ferromagnetic film and an electrode film are sequentially laminated, and a predetermined region of the anti-ferromagnetic film and the electrode film is cut off to expose the magneto-resistive film so that the magneto-resistive sensor operates. It has. Further, the above-described magnetoresistive film and antiferromagnetic film are exchange-coupled at the interface. The interface of the antiferromagnetic film in contact with the magnetoresistive film is formed of a thin film of nickel-manganese-oxygen, and the other region is formed of a thin film of nickel-manganese.

Here, the interface of the above-mentioned antiferromagnetic film in contact with the magnetoresistive effect film has a nickel content in the range of 40 to 55 atomic percent and a manganese content in the range of 40 to 55 atomic percent. And a nickel-manganese-oxygen thin film in which oxygen is in the range of 1 atomic percent to 10 atomic percent. In other areas,
The thin film may be formed of nickel-manganese in which manganese is in the range of 40 atomic percent to 55 atomic percent.

In the interface of the above-mentioned antiferromagnetic film in contact with the magnetoresistive film, nickel is in the range of 48 to 52 atomic percent, and manganese is in the range of 45 to 50 atomic percent. And
In addition, a nickel-manganese-oxygen thin film in which oxygen is in the range of 1 atomic percent to 5 atomic percent is provided. The other region may be a thin film of nickel-manganese in which manganese is in the range of 46 atomic percent to 52 atomic percent.

The nickel-manganese-oxygen thin film formed at the interface of the antiferromagnetic film in contact with the magnetoresistive film may have a thickness of 5 nm to 30 nm. Further, the antiferromagnetic film may have a face-centered square structure in at least a part thereof.

As a method for manufacturing the above-described magnetoresistive effect head, a usual method is employed. In addition, the above-mentioned antiferromagnetic film is obtained by sputtering in an argon gas atmosphere. The configuration is adopted.

Alternatively, as a method of manufacturing the magnetoresistive effect head, a normal method is employed. In addition, the antiferromagnetic film near the interface in contact with the magnetoresistive effect film is made of argon gas or argon gas. % By sputtering in an atmosphere of a mixed gas to which oxygen gas is added to form a thin film composed of nickel, manganese, and oxygen. Thereafter, a thin film composed of nickel-manganese is obtained by sputtering in an atmosphere of argon gas. It may be configured as follows.

In this case, after the formation of the magnetoresistive film, the surface of the region in contact with the antiferromagnetic film is exposed at least once to a gas containing 10% to 100% of oxygen. A film may be formed.

Alternatively, after the surface of the magnetoresistive film in contact with the antiferromagnetic film is exposed at least once to a gas containing 10% to 100% of oxygen, the surface of the magnetoresistive film in contact with the antiferromagnetic film is etched. Thereafter, the above-described antiferromagnetic film may be formed.

The etching may be directional ion beam etching. In this etching, the above-mentioned magnetoresistive effect film may be set to 1 to 10 nanometers.

Further, in the manufacturing process after the formation of the above-described antiferromagnetic film, a heat treatment may be performed. In this case, the heat treatment is performed at least once at a temperature of 200 ° C. to 300 ° C.
The process may be performed at a temperature of 1 hour to 20 hours. At the same time, the heat treatment may be performed in a magnetic field in the range from 10 Oersteds to 3000 Oersteds.

(Inventions of Claims 26 to 36)
In still another magnetoresistive head, at least a soft magnetic film, a non-magnetic spacer film, and a magnetoresistive film are sequentially laminated on a substrate, and a magnetoresistive sensor is formed on the magnetoresistive film. An operating area is provided.
One side and the other side of the soft magnetic film, the non-magnetic spacer film, and the magnetoresistive film forming the sensor operation region are cut to form a cut surface, and the cut surface is magnetically continuous. A ferromagnetic film and an anti-ferromagnetic film are sequentially laminated so as to cover them. Then, a method is employed in which the above-described ferromagnetic film and antiferromagnetic film are exchange-coupled at the interface between the ferromagnetic film and the antiferromagnetic film, and the antiferromagnetic film is formed of a thin film made of nickel-manganese-oxygen.

In the antiferromagnetic film described above, nickel is in the range of 40 atomic percent to 55 atomic percent, manganese is in the range of 40 atomic percent to 55 atomic percent, and oxygen is 1 atomic percent. It may be a thin film composed of nickel-manganese-oxygen in the range of 10 to 10 atomic percent.

Alternatively, the antiferromagnetic film is made of nickel
Consisting of nickel-manganese-oxygen in the range of 8 to 52 atomic percent, manganese in the range of 45 to 50 atomic percent, and oxygen in the range of 1 to 5 atomic percent It may be a thin film.

Here, the antiferromagnetic film described above may have a face-centered square structure in at least a part thereof. As a method for manufacturing the above-mentioned magnetoresistive effect head, besides adopting a usual method, the above-mentioned antiferromagnetic film is further immersed in argon gas or 10% argon gas.
It is obtained by sputtering in an atmosphere of a mixed gas to which the following oxygen gas is added.

Here, after the above-described ferromagnetic film is formed, the surface of the region in contact with the antiferromagnetic film may be subjected to etching treatment, and thereafter, the above-described antiferromagnetic film may be formed. In this case, the etching may be directional ion beam etching. In this etching, the ferromagnetic film may be set at 1 to 10 nanometers.

Further, in the manufacturing process after the formation of the above-described antiferromagnetic film, a heat treatment may be performed. In this case, the heat treatment is performed at least once at a temperature of 200 ° C. to 300 ° C.
It may be performed at a temperature of 1 hour to 20 hours. This heat treatment may also be performed in a magnetic field in the range from 10 Oerst to 3000 Oersts.

(Inventions of Claims 37 to 50)
In still another magnetoresistive head, at least a soft magnetic film, a non-magnetic spacer film, and a magnetoresistive film are sequentially laminated on a substrate, and a magnetoresistive sensor is formed on the magnetoresistive film. An operating region, wherein the soft magnetic film, the non-magnetic spacer film,
The side surfaces of the one end and the other end of the magnetoresistive film are cut to form a cut surface, and the cut surfaces are covered so as to have magnetic continuity. Magnetic films are sequentially laminated. Here, the ferromagnetic film and the antiferromagnetic film are exchange-coupled at the interface.

The above-mentioned interface of the antiferromagnetic film in contact with the ferromagnetic film is constituted by a thin film of nickel-manganese-oxygen, and the other region is constituted by a thin film of nickel-manganese. I am taking it.

Here, the interface of the antiferromagnetic film in contact with the above-described ferromagnetic film is such that nickel is in the range of 40 to 55 atomic percent and manganese is in the range of 40 to 55 atomic percent. A nickel-manganese-oxygen thin film in which oxygen is in the range of 1 to 10 atomic percent, and a thin film of nickel-manganese in which manganese is in the range of 40 to 55 at. It is good also as.

The interface of the antiferromagnetic film in contact with the above-mentioned ferromagnetic film has a nickel content of 48 at.
A nickel-manganese-oxygen thin film in which manganese is in the range of 45 to 50 atomic percent and oxygen is in the range of 1 to 5 atomic percent within the range of atomic percentage, and the other region is manganese May be in the range of 46 atomic percent to 52 atomic percent.

In this case, the thickness of the nickel-manganese-oxygen thin film formed at the interface of the antiferromagnetic film in contact with the ferromagnetic film is set to 5 to 30 nanometers. The antiferromagnetic film may have at least a part thereof having a face-centered square structure.

As a method of manufacturing the above-described magnetoresistive effect head, in addition to the usual method, the above-described antiferromagnetic film is further formed by sputtering in an argon gas atmosphere. , Is adopted.

Alternatively, for the antiferromagnetic film described above,
The antiferromagnetic film near the interface in contact with the ferromagnetic film is first sputtered in an atmosphere of argon gas or a mixed gas in which oxygen gas of 10% or less is added to argon gas to form a thin film of nickel, manganese, and oxygen. After that, a method of forming a thin film made of nickel-manganese by sputtering in an atmosphere of argon gas and then using this as an antiferromagnetic film may be adopted.

Here, after forming the ferromagnetic film, the surface of the ferromagnetic film which is in contact with the antiferromagnetic film is changed from 10% to 100% with oxygen.
% At least once, and then an antiferromagnetic film may be formed.

Alternatively, after the surface of the ferromagnetic film in contact with the antiferromagnetic film is exposed at least once to a gas containing 10% to 100% of oxygen, the surface of the ferromagnetic film in contact with the antiferromagnetic film is etched. After the treatment, the antiferromagnetic film described above may be formed.

In this case, the above-mentioned etching may be directional ion beam etching. In this etching, the thickness of the ferromagnetic film may be set to 1 nm to 10 nm.

Further, in the manufacturing process after the formation of the above-described antiferromagnetic film, heat treatment may be performed. In this case, the heat treatment is performed at least once at a temperature of 200 ° C. to 300 ° C.
The process may be performed at a temperature of 1 hour to 20 hours. In addition, this heat treatment is performed between 10 Oe and 30 Oe.
It may be performed in a magnetic field in the range of 00 Oersted.

Next, in order to evaluate the magnitude of the exchange coupling magnetic field between the ferromagnetic film and the antiferromagnetic film and the blocking temperature in each of the above-mentioned inventions, nickel was deposited on a glass substrate by sputtering. A nickel-iron alloy film having a permalloy composition containing a weight percentage of 25 nanometers was formed,
In addition, nickel, manganese,
A plurality of samples A to P were prepared in which a thin film made of oxygen was formed, and tantalum was further stacked as a protective layer by 10 nanometers.

FIG. 11 shows the experimental results of the composition of each sample and the magnitude of the exchange coupling magnetic field. Here, in order to maximize the exchange-coupling magnetic field, the sample should have a magnetic field in the range of 50 Oersted to 3000 Oersted, in the temperature range of 200 ° C. to 300 ° C., and 1 ° C.
Appropriate heat treatment is applied for a period of time from 20 hours to 20 hours.

As is clear from the chart of FIG.
It was found that the sample composed of nickel, manganese and oxygen having an appropriate composition had a larger exchange coupling magnetic field than the sample composed of nickel and manganese.

Further detailed experiments have shown that nickel is in the range of 40 to 55 atomic percent, manganese is in the range of 40 to 55 atomic percent, and oxygen is in the range of 1 to 100 atomic percent. It has been found that a sufficient exchange coupling magnetic field can be obtained for a thin film composed of nickel-manganese-oxygen within the range of 10 atomic percent.

In particular, the nickel content is between 48 atomic percent and 5 atomic percent.
When the thin film is composed of nickel-manganese-oxygen in which manganese is in a range of 45 to 50 atomic percent and oxygen is in a range of 1 to 5 atomic percent within a range of 2 atomic percent, It was found that the exchange coupling magnetic field was maximized. Here, the composition ratio of nickel and manganese is “50:50” to “52:
48 "was found to be preferable.

Further, the blocking temperature of the thin film composed of nickel, manganese and oxygen having the above-mentioned composition was 400 ° C. or higher, and it was found that the film exhibited sufficient thermal stability.

Further, the exchange coupling magnetic field is largely controlled by the interface between the ferromagnetic film and the antiferromagnetic film, and it is sufficient to use a thin film composed of nickel, manganese and oxygen having the above composition only in the vicinity of the interface. Characteristics are obtained.

In the present invention, since at least oxygen is intentionally contained at the interface between the ferromagnetic film and the antiferromagnetic film, the corrosion resistance is also good. Also, in the case of manufacturing, in the case of a normal metal magnetic film, when it is oxidized, it is magnetically deteriorated and the exchange coupling magnetic field becomes small, or it is difficult to manufacture stably. However, in the case of the present invention,
An antiferromagnetic film can be easily manufactured similarly to an oxide antiferromagnetic film.

[0057]

BEST MODE FOR CARRYING OUT THE INVENTION

[First Embodiment] Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.

In the first embodiment, the magnetoresistive head element comprises a soft magnetic film 12, a nonmagnetic spacer film 13, a magnetoresistive film 14, an antiferromagnetic film 15 on a substrate 11.
a, 15b and electrode films 16a, 16b are sequentially laminated, and the antiferromagnetic films 15a, 15b and the electrode film 16
1 are cut off at a predetermined width in FIG. 1 to expose the magnetoresistive effect film 14 to form a magnetoresistive sensor operating region Tw.

The antiferromagnetic films 15a and 15b and the electrode films 16a and 16b are divided into two by the sensor operation region Tw.

As the substrate 11, Al ₂ O ₃ -TiC-based ceramic is used. Here, the soft magnetic film 12
Is made of a cobalt-zirconium-molybdenum amorphous alloy having a thickness of 25 nanometers, the nonmagnetic spacer film 13 is made of tantalum having a thickness of 10 nanometers, and the magnetoresistive effect film 14 is made of nickel / iron having a thickness of 20 nanometers. The electrode films 16a and 16b are made of an alloy, and are made of gold having a thickness of 100 nanometers.

Next, the manufacturing process of the magnetoresistive head will be described in detail with reference to FIG.

First, as shown in FIG.
On top of this, a soft magnetic film 12, a non-magnetic spacer film 13 and a magnetoresistive film 14 are sequentially laminated by sputtering,
Further, a negative photoresist 17 having a thickness of about 1 micron is uniformly applied thereon.

Thereafter, as shown in FIG. 2B, a portion of the photoresist 17 corresponding to the region Tw operating as a magnetoresistive sensor was patterned into a stencil shape by exposing and developing under appropriate conditions.

Next, as shown in FIG. 2C, a nickel-manganese alloy target containing 54 atomic percent of manganese was added to the antiferromagnetic films 15a, 15b, and 15c by adding 3% oxygen gas to argon gas. In a mixed gas atmosphere, nickel was sputtered at a rate of 49 atomic percent,
A thin film made of nickel-manganese-oxygen containing 47 at.% Of manganese and 4 at.
A nanometer film was formed.

Further, as the electrode films 16a, 16b, and 16c, gold having a thickness of 100 nanometers was formed by a sputtering method.

Thereafter, the photoresist 17 in the magnetoresistive sensor operation region Tw, and the antiferromagnetic film 15c and the electrode film 16c laminated thereon are removed using an organic solvent such as acetone. The following magnetoresistive head element was manufactured. In this case, ultrasonic cleaning or the like may be used in combination to completely and promptly remove the photoresist 17 and the like.

Finally, this magnetoresistive head element is placed in a magnetic field of 800 Oersted at 250 ° C. and 10 ° C.
A time heat treatment was performed.

Although not shown in FIGS. 1 and 2, a functional film for shielding an extra magnetic field other than a specific signal magnetic field to be recorded on and reproduced from a magnetic recording medium, as shown in FIG. A ferromagnetic film called a shield film may be formed above and below with the magnetoresistive effect head element shown interposed therebetween. However, if the shield film is a conductive film at this time, it is necessary to form an insulating film between the magnetoresistive head element and the shield film to maintain electrical insulation.

Thereafter, the magnetoresistive head element manufactured in the above process is subjected to slider processing by a known technique, and a pressure spring, a support arm, etc. are attached, wiring to electrodes is performed, and the like. An effect head was made.

When the reproducing characteristics of the magnetoresistive head manufactured as described above were examined, it was found that good reproducing characteristics free of Barkhausen jump noise due to a weak binding force for forming the magnetoresistive film into a single magnetic domain were obtained. Obtained.

Here, the antiferromagnetic films 15a, 15
For b and 15c, a nickel / manganese / oxygen target containing 50 at.% of manganese and 6 at.% of oxygen was sputtered in an argon gas atmosphere by using 49 at.% of nickel, 48 at.% of manganese and oxygen. May be formed by forming a thin film composed of nickel-manganese-oxygen containing 3 atomic percent with a thickness of 50 nanometers.

In this case, the same reproduction characteristics as in the first embodiment can be obtained. That is, it is possible to obtain good reproduction characteristics without Barkhausen jump noise caused by a weak binding force for forming the magnetoresistive film into a single magnetic domain.

In FIG. 2B, the photoresist 17 corresponding to the region Tw operating as a magnetoresistive sensor is patterned into a stencil shape by exposing and developing it under appropriate conditions. After that, the antiferromagnetic films 15a of the magnetoresistive effect film 14,
15b has a directional ion beam
50 nm was removed by etching.

Then, as shown in FIG. 2 (c), a nickel-manganese alloy target containing 54 atomic percent of manganese was used as the antiferromagnetic films 15a, 15b, and 15c. In a mixed gas atmosphere in which nickel has been added,
Atomic percent, 47 atomic percent manganese and 5 oxygen
A thin film composed of nickel-manganese-oxygen of 4 atomic percent was formed to a thickness of 50 nanometers.

In this case, the same operation and effect as those of the first embodiment described above are obtained, and the reproduction characteristic is also attributable to the weak binding force for making the magnetoresistive film into a single magnetic domain. Good reproduction characteristics without the Barkhausen jump noise can be obtained.

[Second Embodiment] Next, a second embodiment of the present invention will be described.
The embodiment will be described with reference to FIGS.

In the second embodiment, as shown in FIG. 3, the antiferromagnetic films 25a and 25b have different compositions in the vicinity of the interface in contact with the magnetoresistive film 24 and in other portions. The feature is that it is.

Here, the entire configuration of the second embodiment will be described. In the magnetoresistive head element according to the second embodiment, a soft magnetic film 22, a non-magnetic spacer film 23, a magnetoresistive film 24, and antiferromagnetic films 25a and 2 are formed on a substrate 21.
5b and electrode films 26a, 26b are sequentially laminated. Further, the antiferromagnetic films 25a and 25b and the electrode film 26
The central portions in FIGS. 3A and 26B of FIG. 3 are cut with a predetermined width, and the magnetoresistive effect film 24 is exposed at the cut portions, thereby forming a magnetoresistive sensor operating region Tw.

The antiferromagnetic films 25a and 25b and the electrode films 26a and 26b are divided into two by the sensor operation region Tw.

As the substrate 21, an Al ₂ O ₃ —TiC-based ceramic is used. The soft magnetic film 22 is made of a 25 nm thick cobalt-zirconium / molybdenum amorphous alloy, the non-magnetic spacer film 23 is made of 10 nm thick tantalum, and the magnetoresistive film 24 is thin. The electrode films 26a and 26b are made of gold having a thickness of 100 nanometers, which are made of a nickel-iron alloy having a thickness of 20 nanometers, and are laminated by sputtering.

Next, the manufacturing process of the magnetoresistive head according to the second embodiment will be described in detail with reference to FIG.

First, as shown in FIG.
On top, a soft magnetic film 22, a non-magnetic spacer film 23, and a magnetoresistive film 24 are sequentially laminated by sputtering,
Further, a negative photoresist 27 having a thickness of about 1 micron is uniformly applied thereon.

Thereafter, as shown in FIG. 4B, a portion of the photoresist 27 corresponding to the region Tw operating as a magnetoresistive sensor was patterned into a stencil shape by exposing and developing under appropriate conditions.

Then, after putting into a sputtering apparatus and evacuating to a vacuum, oxygen gas was introduced and maintained at 1 atm for 1 minute, whereby oxygen was adsorbed on the surface of the magnetoresistive film 24.

Thereafter, as shown in FIG. 4C, a nickel-manganese alloy target containing 54 atomic percent of manganese was used as the antiferromagnetic films 25a, 25b, and 25c by sputtering in an argon gas atmosphere. A thin film made of nickel-manganese containing 49 atomic percent of manganese was formed to a thickness of 50 nanometers.

Further, as the electrode films 26a, 26b and 26c, gold having a thickness of 100 nanometers was formed by a sputtering method.

Thereafter, the photoresist 17 in the magnetoresistive sensor operating region Tw, and the antiferromagnetic film 15c and the electrode film 16c laminated thereon are removed using an organic solvent such as acetone, as shown in FIG. Such a magnetoresistive head element was manufactured. At this time, in order to completely and quickly remove the photoresist 17 and the like, cleaning with ultrasonic waves or the like may be used together.

Finally, this magnetoresistive head element is
By performing a heat treatment at 270 ° C. for 15 hours in a magnetic field of 500 Oersteds, the portion from the interface between the antiferromagnetic films 25 a and 25 b in contact with the magnetoresistive film 24 to a thickness of 15 nanometers is removed. Was reacted with oxygen adsorbed on the substrate to form a thin film of nickel-manganese-oxygen containing 50 atomic percent of nickel, 48 atomic percent of manganese, and 2 atomic percent of oxygen.

Although not shown in FIGS. 3 and 4, as a functional film for shielding an extra magnetic field other than a specific signal magnetic field to be recorded and reproduced on a magnetic recording medium, FIG. A ferromagnetic film called a shield film may be formed above and below with the magnetoresistive effect head element shown interposed therebetween.

However, at this time, if the shield film is a conductive film, it is necessary to form an insulating film between the magnetoresistive head element and the shield film for maintaining electrical insulation.

Thereafter, the magnetoresistive head element manufactured in the above process is subjected to slider processing by a well-known technique, and a pressure spring, a support arm, etc. are attached, and wiring to electrodes is performed. An effect head was made.

In this case, the same operation and effect as those of the first embodiment described above are obtained, and the reproduction characteristic is also attributable to the weak binding force for making the magnetoresistive film into a single magnetic domain. Good reproduction characteristics without the Barkhausen jump noise can be obtained.

Here, in FIG. 4B described above,
The portion of the photoresist 27 corresponding to the region Tw that operates as a magnetoresistive sensor is exposed and developed under appropriate conditions, thereby patterning the region into a stencil shape.

Thereafter, as shown in FIG. 4C, as the antiferromagnetic films 25a, 25b and 25c, first, a nickel-manganese alloy target containing manganese at 54 atomic percent was supplied with argon gas and 5% oxygen gas. A thin film of nickel-manganese-oxygen containing 48 atomic percent of nickel, 47 atomic percent of manganese, and 5 atomic percent of oxygen is formed to a thickness of 10 nanometers by a sputtering method in an added mixed gas atmosphere. Subsequently, a thin film of nickel-manganese containing manganese of 49 atomic percent may be formed to a thickness of 50 nanometers by a sputtering method in an atmosphere containing only argon gas.

Even in this case, as in the case of the above-described second embodiment, the reproduction characteristics are free from Barkhausen Jumb noise caused by a weak binding force for forming the magnetic low resistance effect film into a single magnetic domain. Good reproduction characteristics could be obtained.

Here, before forming the antiferromagnetic films 25a, 25b and 25c on the magnetic low resistance effect film 24, the magnetic low resistance effect film 24 is formed to have a thickness of 1 nanometer or more by directional ion beam etching. It may be etched away by about 10 nanometers.

[Third Embodiment] Next, a third embodiment of the present invention will be described.
The embodiment will be described with reference to FIGS.

In the third embodiment, as shown in FIG.
The soft magnetic film 32, the non-magnetic spacer film 33 and the magnetic low resistance effect film 34 are tapered, and the longitudinal bias films are composed of ferromagnetic films 35a and 35b and antiferromagnetic films 36a and 36b.
Further, the present invention is characterized in that a vertical bias is applied not only to the magnetically resistant film 34 but also to the soft magnetic film 32. Here, the ferromagnetic films 35a and 35b
May be formed of a soft magnetic film.

Hereinafter, this will be described in detail. First, FIG.
As shown in FIG. 1A, a soft magnetic film 32, a non-magnetic spacer film 33, and a magnetic low resistance effect film 34 are sequentially laminated on a substrate 31 by a sputtering method, and further about 1 micron thick. Is applied uniformly to a negative photoresist 27 having a thickness of.

Thereafter, as shown in FIG. 6B, a portion of the photoresist 27 corresponding to a region Tw operating as a magnetoresistive sensor was patterned into a stencil shape by exposing and developing under appropriate conditions.

Next, as shown in FIG. 6C, the soft magnetic film 3 was milled using an ion beam having an incident angle of 25 degrees.
2. The non-magnetic spacer film 33 and the magnetic resistance effect film 34 are processed into a tapered shape. Thereafter, as shown in FIG. 7, a nickel-iron alloy having a thickness of 26 nanometers and a permalloy composition was formed as the ferromagnetic films 35a, 35b, and 35c.

Further, an antiferromagnetic film 36 is further formed thereon.
As a, 36b, and 36c, a nickel-manganese alloy target containing 54 atomic percent of manganese was sputtered in a mixed gas atmosphere in which 3% oxygen gas was added to argon gas. A thin film of nickel-manganese-oxygen containing 47 atomic percent and 4 atomic percent of oxygen was formed to a thickness of 40 nanometers.

Here, before forming a thin film composed of nickel-manganese-oxygen, the surface layers of the ferromagnetic films 35a and 35b may be removed by an appropriate thickness by directional etching using an ion beam or the like. Good. At this time, the thickness of the surface layer to be removed is desirably 1 nanometer to 10 nanometers.

Next, as the electrode films 37a, 37b and 37c, gold having a thickness of 150 nanometers was formed by sputtering.

Thereafter, the photoresist 38 in the magnetoresistive sensor operation region Tw and the ferromagnetic film 35c, antiferromagnetic film 36c and electrode film 37c laminated thereon are formed by:
Removal was performed using an organic solvent such as acetone to produce a magnetic resistance effect head element as shown in FIG. At this time, ultrasonic cleaning or the like may be used in combination to completely and promptly remove the photoresist 38 and the like. Finally, the magnetic low resistance effect head element shown in FIG.
Heat treatment was performed at 250 ° C. for 15 hours in a magnetic field of 0 Oe.

Although not shown in FIGS. 5 to 7 described above, a functional film intended to shield an extra magnetic field other than a specific signal magnetic field to be recorded and reproduced on a magnetic recording medium, A ferromagnetic film called a shield film may be formed above and below the magnetic low resistance effect head element shown in FIG. However, when the shield film is a conductive film, it is necessary to form an insulating film for maintaining electrical insulation between the magnetoresistive head element and the shield film.

Thereafter, slider processing is performed on the magnetic low resistance effect head element manufactured in the above-described steps by a known technique, and a pressure spring, a support arm, etc. are attached, wiring to electrodes is performed, and the like. A low drag head was fabricated.

When the reproduction characteristics of the magnetic low resistance effect head manufactured as described above were examined, it was found that good reproduction without Barkhausen jump noise caused by a weak binding force for converting the magnetic low resistance effect film into a single magnetic domain was obtained. Characteristics were obtained.

Here, the antiferromagnetic film 36 shown in FIG.
As a, 36b, and 36c, a nickel / manganese / oxygen target containing 48 atomic percent of manganese and 10 atomic percent of oxygen was used in a sputtering method in an argon gas atmosphere to obtain a mixture of 48 atomic percent of nickel and 47 atomic percent of manganese.
A thin film composed of nickel-manganese-oxygen containing 5 atomic percent of oxygen and 5 atomic percent of oxygen may be formed to a thickness of 60 nanometers. Even in this case, the reproduction characteristics of the magnetoresistance effect head according to this embodiment are caused by the weak binding force for making the magnetoresistance effect film into a single magnetic domain, as in the case of the above-described second embodiment. Good reproduction characteristics without Barkhausen jump noise can be obtained.

[Fourth Embodiment] Next, a fourth embodiment of the present invention will be described.
An embodiment will be described with reference to FIGS. In the fourth embodiment, in addition to the features disclosed in the third embodiment described above, as shown in FIG.
6b is characterized in that films having different compositions are formed in the vicinity of the interface in contact with the ferromagnetic films 45a and 45b and in other portions.

The details will be described below. First, FIG.
As shown in (a), a soft magnetic film 42, a non-magnetic spacer film 43, and a magnetic low resistance effect film 44 are sequentially laminated on a substrate 41 by a sputtering method. Is applied uniformly to a negative photoresist 48 having a thickness of.

Thereafter, as shown in FIG. 9B, a portion of the photoresist 48 corresponding to the region Tw operating as a magnetoresistive sensor was patterned into a stencil shape by exposing and developing under appropriate conditions.

Next, as shown in FIG. 9C, the soft magnetic film 4 was milled using an ion beam having an incident angle of 25 degrees.
2. The non-magnetic spacer film 43 and the magnetic resistance effect film 44 are processed into a tapered shape.

Thereafter, as shown in FIG.
After forming a permalloy nickel / iron alloy having a thickness of 26 nanometers as 5a, 45b, and 45c, the film was taken out of the sputtering apparatus and exposed to air.

Then, after that, the ferromagnetic films 45a, 45
5b, 45c, antiferromagnetic films 46a, 46b, 46c
Nickel containing manganese at 56 atomic percent
Using a manganese alloy target in an argon gas atmosphere by sputtering, a thin film of nickel-manganese containing 50 atomic percent of manganese was formed to a thickness of 60 nanometers.

Here, before forming a thin film composed of nickel-manganese-oxygen, the surface layers of the ferromagnetic films 45a and 45b may be removed by an appropriate thickness by directional etching using an ion beam or the like. Good. At this time, the thickness of the surface layer to be removed may be from 1 nanometer to 10 nanometers, and particularly preferably from 1 nanometer to 5 nanometers.

Next, as the electrode films 47a, 47b, and 47c, gold having a thickness of 150 nanometers was formed by sputtering.

Thereafter, the photoresist 48 in the magnetoresistive sensor operation region Tw and the ferromagnetic film 45c, antiferromagnetic film 46c and electrode film 47c laminated thereon are removed using an organic solvent such as acetone. A magnetic low resistance head element as shown in FIG. 10 was manufactured. In this case, ultrasonic cleaning or the like may be used in combination to completely and promptly remove the photoresist 48 and the like.

Finally, the magnetic low resistance effect head element is subjected to a heat treatment at 270 ° C. for 15 hours in a magnetic field of 500 Oersteds to thereby obtain the ferromagnetic films 45a, 45a.
Antiferromagnetic films 46a, 46b, 46 in contact with 5b, 45c
The portion from the interface c to the thickness of 10 nanometers was reacted with oxygen adsorbed on the ferromagnetic films 45a, 45b, and 45c to combine 50 atomic percent of nickel, 48 atomic percent of manganese, and 2 atomic percent of oxygen. A thin film composed of nickel-manganese-oxygen was formed.

Although not shown in FIGS. 8 to 10, as in the case of the sixth embodiment, a strong magnetic shield film is formed vertically above and below the magnetic low resistance effect head element shown in FIG. An insulating film for maintaining electrical insulation between the magnetic film and the magnetic resistance head element and the shield film may be formed.

Thereafter, the magnetic low resistance effect head element manufactured in the above process is subjected to slider processing by a well-known technique, and a pressure spring, a support arm, etc. are attached, and wiring to electrodes is performed. A low drag head was fabricated.

When the reproduction characteristics of the magneto-resistance effect head according to the fourth embodiment were examined, the constraint force for converting the magneto-resistance effect film into a single magnetic domain was obtained in the same manner as in the third embodiment. And good reproduction characteristics free of Barkhausen jump noise due to the weakness of the recording medium.

Here, as the ferromagnetic films 45a, 45b and 45c disclosed in the fourth embodiment, the thickness 26
A thin film of a nickel-iron alloy having a nanometer permalloy composition is formed.

Thereafter, the antiferromagnetic films 46a, 46b, 46
First, a nickel-manganese alloy target containing 54 atomic percent of manganese was put into argon gas at 8%.
In a mixed gas atmosphere to which oxygen gas was added, by sputtering, nickel was 47 at.% And manganese was 46 at.
A thin film of nickel-manganese-oxygen containing 5 atomic percent of atomic percentage and oxygen is formed to a thickness of 15 nanometers. Subsequently, a thin film made of nickel-manganese containing manganese at 49 atomic percent may be formed to a thickness of 45 nanometers by a sputtering method in an atmosphere containing only argon gas.

Also in this case, as in the case of the above-described fourth embodiment, good reproduction characteristics free of Barkhausen jump noise due to a weak binding force for making the magnetic low resistance effect film a single magnetic domain can be obtained. I was able to.

Here, the predetermined ferromagnetic films 45a, 45b,
Before forming the antiferromagnetic films 46a, 46b, 46c on the 45c, the ferromagnetic films 45a, 45b, 45c may be etched and removed by about 1 to 10 nanometers by directional ion beam etching. . Further, the ferromagnetic films 45a to 45c may be replaced with soft magnetic films.

Although several specific examples suitable for the present invention have been described above, various design changes are possible within the scope of the present invention other than the above-described embodiments, and the usefulness of the present invention is very large. There is something.

[0128]

The present invention is constructed and functions as described above. According to this, the exchange coupling magnetic field with the magnetically low resistance effect film is large, the blocking temperature is high, and the corrosion resistance is excellent.
Furthermore, by providing an easily manufactured antiferromagnetic film and using it for the antiferromagnetic longitudinal bias film and the antiferromagnetic exchange bias film, the binding force for making the magnetic low coercive effect film into a single magnetic domain is strong enough, It is possible to provide an unprecedented excellent magnetoresistive head which has no Barkhausen jump noise generated when reproducing information and has high performance and high reliability, and a method of manufacturing the same.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a first embodiment of the present invention.

FIG. 2 is a view showing a part of a manufacturing process of the magnetoresistive effect head according to the first embodiment disclosed in FIG. 1, and FIG.
FIG. 2B is an explanatory view showing a state in which a negative type photoresist is uniformly applied after forming a magnetoresistive effect film, and FIG. 2B is an explanatory view showing a state in which an active area is exposed and developed to be patterned into a stencil shape. FIG. 2C is an explanatory view showing a state in which an antiferromagnetic film and an electrode film are sequentially laminated.

FIG. 3 is a schematic sectional view showing a second embodiment of the present invention.

FIG. 4 is a diagram showing a part of a manufacturing process of the magnetoresistive head according to the second embodiment disclosed in FIG. 3, and FIG.
FIG. 4B is an explanatory view showing a state in which a negative type photoresist is uniformly applied after forming a magnetoresistive effect film, and FIG. 4B is an explanatory view showing a state in which an active area is exposed and developed to be patterned into a stencil shape. FIG. 4C is an explanatory view showing a state in which an antiferromagnetic film and an electrode film are sequentially laminated.

FIG. 5 is a schematic sectional view showing a third embodiment of the present invention.

FIG. 6 is a view showing a part of the manufacturing process of the magnetoresistive head according to the third embodiment disclosed in FIG. 5, and FIG.
FIG. 6 is an explanatory view showing a state in which a negative type photoresist is uniformly applied after forming a magnetoresistive effect film, and FIG. 6B is an explanatory view showing a state in which an active region is exposed and developed to be patterned into a stencil shape. FIG. 6C is an explanatory view showing a state where both sides of a laminated portion composed of a soft magnetic film, a non-magnetic spacer film, and a magnetoresistive film are tapered down.

FIG. 7 is an explanatory view showing a part of a manufacturing process performed after the manufacturing process shown in FIG. 6;

FIG. 8 is a schematic sectional view showing a fourth embodiment of the present invention.

FIG. 9 is a view showing a part of the manufacturing process of the magnetoresistive head according to the fourth embodiment disclosed in FIG. 8;
FIG. 9B is an explanatory view showing a state in which a negative type photoresist is uniformly applied after forming a magnetoresistive effect film, and FIG. 9B is an explanatory view showing a state in which an active area is exposed and developed to be patterned into a stencil shape. FIG. 9C is an explanatory view showing a state where both sides of a laminated portion composed of a soft magnetic film, a non-magnetic spacer film, and a magnetoresistive film are tapered down.

FIG. 10 is an explanatory diagram showing a part of the manufacturing process performed after the manufacturing process shown in FIG. 9;

FIG. 11 is a table showing measurement results of exchange coupling magnetic fields with respect to the composition of each sample used in each embodiment.

FIG. 12 is a schematic sectional view showing a conventional example.

FIG. 13 is a schematic sectional view showing another conventional example.

[Explanation of symbols]

11, 21, 31, 41 Substrate 12, 22, 32, 42 Soft magnetic film 13, 23, 33, 43 Nonmagnetic spacer film 14, 24, 34, 44 Magnetic low resistance effect film 15a, 15b, 15c, 25a, 25b , 25c Antiferromagnetic film 16a, 16b, 16c, 26a, 26b, 26c Electrode film 17, 27, 38, 48 Photoresist 35a, 35b, 35c, 45a, 45b, 45c Ferromagnetic film 36a, 36b, 36c, 46a, 46b, 46c Antiferromagnetic film 37a, 37b, 37c, 47a, 47b, 47c Electrode film Tw Magnetoresistive sensor operating area

Claims (50)

[Claims] At least a soft magnetic film, a non-magnetic spacer film, a magnetoresistive film, an antiferromagnetic film, and an electrode film are sequentially laminated on a substrate, and predetermined regions of the antiferromagnetic film and the electrode film are cut off. A magnetoresistive sensor operating region in which the magnetoresistive film is exposed, wherein the magnetoresistive film and the antiferromagnetic film are exchange-coupled at an interface between the magnetoresistive film and the antiferromagnetic film. A magnetoresistive head formed by a thin film composed of rumanganese and oxygen. 2. The antiferromagnetic film according to claim 1, wherein nickel is in a range of 40 atomic percent to 55 atomic percent, manganese is in a range of 40 atomic percent to 55 atomic percent, and oxygen is 1 atomic percent to 10 atomic percent. 2. The magnetoresistive head according to claim 1, wherein the thin film is composed of nickel-manganese-oxygen in an atomic percentage range. 3. The antiferromagnetic film according to claim 1, wherein nickel is in a range of 48 atomic percent to 52 atomic percent, manganese is in a range of 45 atomic percent to 50 atomic percent, and oxygen is 1 atomic percent to 5 atomic percent. 2. A magnetoresistive head according to claim 1, wherein said thin film is made of nickel-manganese-oxygen in an atomic percentage range. 4. The antiferromagnetic film according to claim 1, wherein at least a part of the antiferromagnetic film has a face-centered square structure.
4. The magnetoresistive effect head according to 2 or 3. 5. At least a soft magnetic film, a non-magnetic spacer film, a magnetoresistive film, an antiferromagnetic film, and an electrode film are sequentially laminated on a substrate, and predetermined regions of the antiferromagnetic film and the electrode film are cut off. A magnetoresistive sensor operating region in which the magnetoresistive film is exposed, wherein the magnetoresistive film and the antiferromagnetic film are exchange-coupled at an interface between the magnetoresistive film and the antiferromagnetic film. A magnetoresistive effect head comprising a thin film of oxygen-oxygen, wherein the antiferromagnetic film is formed by sputtering in an atmosphere of argon gas or a mixed gas obtained by adding oxygen gas of 10% or less to argon gas. Of manufacturing a magnetoresistive head. 6. The method for manufacturing a magnetoresistive head according to claim 5, wherein after forming the magnetoresistive film, a surface of a region in contact with the antiferromagnetic film is subjected to an etching treatment, and thereafter, the antiferromagnetic film is etched. A method for manufacturing a magnetoresistive head, comprising forming a ferromagnetic film. 7. The method according to claim 6, wherein the etching is directional ion beam etching. 8. The method according to claim 6, wherein the thickness of the magnetoresistive film formed by the etching is set to a thickness in a range from 1 nanometer to 10 nanometers.
Or a method of manufacturing a magnetoresistive head according to claim 7. 9. The method of manufacturing a magnetoresistive head according to claim 5, wherein a heat treatment is performed in a manufacturing process after forming the antiferromagnetic film. Manufacturing method of effect head. 10. The heat treatment is performed at a temperature of 200 ° C. to 30 ° C.
The method according to claim 9, wherein the method is performed at least once at 0 ° C. for 1 hour to 20 hours. 11. The method according to claim 9, wherein the heat treatment is performed in a magnetic field in a range from 10 Oersted to 3000 Oersted. 12. At least a soft magnetic film, a non-magnetic spacer film, a magnetoresistive film, an antiferromagnetic film and an electrode film are sequentially laminated on a substrate, and predetermined regions of the antiferromagnetic film and the electrode film are cut off. A magnetoresistive sensor operating region in which the magnetoresistive film is exposed, wherein the magnetoresistive film and the antiferromagnetic film are exchange-coupled at an interface between the magnetoresistive film and the antiferromagnetic film. A magnetoresistive head, wherein the interface of the ferromagnetic film is formed of a thin film of nickel-manganese-oxygen, and the other region is formed of a thin film of nickel-manganese. 13. The method according to claim 11, wherein the interface between the antiferromagnetic film and the magnetoresistive film is 40 atomic percent to 55 atomic percent nickel.
A nickel-manganese-oxygen thin film whose atomic percentage is in the range of 40 atomic percent to 55 atomic percent and whose oxygen is in the range of 1 atomic percent to 10 atomic percent; 13. The magnetoresistive head according to claim 12, wherein said region is formed of a thin film of nickel-manganese in which manganese is in the range of 40 atomic percent to 55 atomic percent. 14. An interface between the antiferromagnetic film and the magnetoresistive film, wherein the interface between the nickel and the antiferromagnetic film is 48 at.
A nickel-manganese-oxygen thin film in which manganese is in the range of 45 to 50 atomic percent and oxygen is in the range of 1 to 5 atomic percent; 13. The magnetoresistive head according to claim 12, wherein said region is formed of a thin film made of nickel-manganese in which manganese is in the range of 46 atomic percent to 52 atomic percent. 15. The thin film made of nickel-manganese-oxygen formed at the interface of the antiferromagnetic film in contact with the magnetoresistive film has a thickness of 5 nm to 30 nm. Claim 12, 13, or 14
A magnetoresistive head according to any of the preceding claims. 16. The antiferromagnetic film according to claim 1, wherein at least a part thereof has a face-centered square structure.
16. The magnetoresistive head according to 2, 13, 14, or 15. 17. On a substrate, at least a soft magnetic film, a non-magnetic spacer film, a magnetoresistive film, an antiferromagnetic film and an electrode film are sequentially laminated, and predetermined regions of the antiferromagnetic film and the electrode film are cut off. A magnetoresistive sensor operating area in which the magnetoresistive film is exposed, wherein the magnetoresistive film and the antiferromagnetic film are exchange-coupled at an interface between the magnetoresistive film and the antiferromagnetic film. In the magnetoresistive effect head in which the interface of the magnetic film is constituted by a thin film composed of nickel-manganese-oxygen and the other region is constituted by a thin film composed of nickel-manganese, the antiferromagnetic film is formed of argon gas. A method for manufacturing a magnetoresistive head, wherein the method is formed by sputtering in an atmosphere. 18. On a substrate, at least a soft magnetic film, a non-magnetic spacer film, a magnetoresistive film, an antiferromagnetic film, and an electrode film are sequentially laminated, and predetermined regions of the antiferromagnetic film and the electrode film are cut off. A magnetoresistive sensor operating region in which the magnetoresistive film is exposed, wherein the magnetoresistive film and the antiferromagnetic film are exchange-coupled at the interface thereof,
The interface of the antiferromagnetic film in contact with the magnetoresistive film,
It is composed of a thin film composed of nickel-manganese-oxygen,
In a magnetoresistive effect head in which the other region is formed of a thin film made of nickel-manganese, the antiferromagnetic film near the interface in contact with the magnetoresistive effect film is first reduced to 10% or less of argon gas or argon gas. A thin film composed of nickel, manganese and oxygen is formed by sputtering in an atmosphere of a mixed gas to which oxygen gas is added, and then a thin film composed of nickel-manganese is formed by sputtering in an atmosphere of argon gas. A method of manufacturing a magnetoresistive head, comprising: 19. The method of manufacturing a magnetoresistive head according to claim 17, wherein, after forming the magnetoresistive film, the surface of a region in contact with the antiferromagnetic film is formed by adding 10% to 100% of oxygen. %. The method of manufacturing a magnetoresistive effect head, comprising exposing the antiferromagnetic film to the gas containing at least once, and thereafter forming the antiferromagnetic film. 20. The method of manufacturing a magnetoresistive head according to claim 19, wherein a surface of the magnetoresistive film in contact with the antiferromagnetic film is
A step of exposing the surface of the magnetoresistive film in contact with the antiferromagnetic film at least once to a gas containing 10% to 100% of oxygen, and thereafter forming the antiferromagnetic film. Of manufacturing a magnetoresistive head. 21. The method according to claim 20, wherein the etching is directional ion beam etching. 22. The method according to claim 20, wherein the magnetoresistive film formed by the etching is set in a range of 1 nanometer to 10 nanometers. 23. The method of claim 17, 18, 19, 20, 21.
23. The method of manufacturing a magnetoresistive head according to claim 22, wherein a heat treatment is performed in a manufacturing process after the formation of the antiferromagnetic film. 24. The heat treatment is performed at a temperature of 200 ° C. to 30 ° C.
24. The method of manufacturing a magnetoresistive head according to claim 23, wherein the method is performed at least once at 0 [deg.] C. for 1 hour to 20 hours. 25. The method according to claim 23, wherein the heat treatment is performed in a magnetic field within a range of 10 to 3000 Oe. 26. At least a soft magnetic film, a non-magnetic spacer film, and a magnetoresistive film are sequentially laminated on a substrate, and a magnetoresistive sensor operating region is provided on the magnetoresistive film to form the sensor operating region. One side and the other side of the soft magnetic film, the non-magnetic spacer film, and the magnetoresistive film are cut off to form a cut surface, and the cut surface is covered with magnetic continuity. The ferromagnetic film and the antiferromagnetic film are sequentially stacked as described above, and the ferromagnetic film and the antiferromagnetic film are exchange-coupled at the interface, and the antiferromagnetic film is formed of nickel-manganese-oxygen. A magnetoresistive head comprising a thin film. 27. The antiferromagnetic film, wherein nickel is in the range of 40 to 55 atomic percent, manganese is in the range of 40 to 55 atomic percent, and oxygen is in the range of 1 to 10 atomic percent. 27. The magnetoresistive head according to claim 26, wherein the thin film is made of nickel-manganese-oxygen within the range of atomic percentage. 28. The antiferromagnetic film, wherein nickel is in the range of 48 to 52 atomic percent, manganese is in the range of 45 to 50 atomic percent, and oxygen is 1 to 5 atomic percent. 27. The magnetoresistive head according to claim 26, wherein the thin film is made of nickel-manganese-oxygen within the range of atomic percentage. 29. The antiferromagnetic film according to claim 2, wherein at least a part thereof has a face-centered square structure.
29. The magnetoresistive head according to 6, 27 or 28. 30. At least a soft magnetic film, a non-magnetic spacer film, and a magnetoresistive effect film are sequentially laminated on a substrate, and a magnetoresistive sensor operation region is provided on the magnetoresistive effect film.
The soft magnetic film, the non-magnetic spacer film, and the one end and the other end of the magnetoresistive film forming the sensor operation region are cut off to form cut surfaces. A ferromagnetic film and an antiferromagnetic film are sequentially laminated so as to have continuity, and the ferromagnetic film and the antiferromagnetic film are exchange-coupled at the interface,
In the magnetoresistive head, wherein the antiferromagnetic film is formed of a thin film made of nickel-manganese-oxygen, the antiferromagnetic film is formed of argon gas or a mixed gas obtained by adding oxygen gas of 10% or less to argon gas. A method for manufacturing a magnetoresistive head, wherein a film is formed by sputtering in an atmosphere of (1). 31. The method of manufacturing a magnetoresistive head according to claim 30, wherein after forming the ferromagnetic film, a surface of a region in contact with the antiferromagnetic film is etched, and thereafter the antiferromagnetic film is formed. A method for manufacturing a magnetoresistive head, wherein a film is formed. 32. The method according to claim 31, wherein the etching is directional ion beam etching. 33. The ferromagnetic film according to claim 1, wherein said ferromagnetic film is 1 nanometer to 1 nanometer.
32. A film thickness of 0 nanometer.
33. The method of manufacturing a magnetoresistive head according to 32. 34. The method according to claim 30, 31, 32 or 33.
The method of manufacturing a magnetoresistive head according to claim 1, wherein a heat treatment is performed in a manufacturing process after forming the antiferromagnetic film. 35. The heat treatment is performed at a temperature of 200 ° C. to 30 ° C.
The method according to claim 34, wherein the method is performed at least once at 0 ° C for 1 to 20 hours. 36. The method according to claim 34, wherein the heat treatment is performed in a magnetic field in a range of 10 Oersteds to 3000 Oersteds. 37. At least a soft magnetic film, a non-magnetic spacer film, and a magnetoresistive effect film are sequentially laminated on a substrate, and a magnetoresistive sensor operation region is provided on the magnetoresistive film to form the sensor operation region. One side and the other side of the soft magnetic film, the non-magnetic spacer film and the magnetoresistive film are cut off to form a cut surface, and the cut surface is magnetically continuous. A ferromagnetic film and an anti-ferromagnetic film are sequentially laminated so as to cover, the ferromagnetic film and the anti-ferromagnetic film are exchange-coupled at an interface between the ferromagnetic film and the anti-ferromagnetic film. A magnetoresistive head, wherein the interface is formed of a thin film of nickel-manganese-oxygen, and the other area is formed of a thin film of nickel-manganese. 38. An interface of the antiferromagnetic film in contact with the ferromagnetic film, wherein nickel is in a range of 40 atomic percent to 55 atomic percent, manganese is in a range of 40 atomic percent to 55 atomic percent, And a nickel-manganese-oxygen thin film in which oxygen is in the range of 1 atomic percentage to 10 atomic percentage, and manganese in the other region is 40 atomic percent.
38. The magnetoresistive head according to claim 37, wherein the thin film is made of nickel-manganese having an atomic percentage in the range of 55 to 55 atomic percent. 39. An interface of the antiferromagnetic film in contact with the ferromagnetic film, wherein nickel is in a range of 48 atomic percent to 52 atomic percent, manganese is in a range of 45 atomic percent to 50 atomic percent, And a thin film of nickel-manganese-oxygen in which oxygen is within a range of 1 atomic percent to 5 atomic percent, and the other region is composed of 4 atomic% of manganese.
The magnetoresistive head according to claim 37, wherein the thin film is made of nickel-manganese in a range of 6 atomic percent to 52 atomic percent. 40. The thin film made of nickel-manganese-oxygen formed at the interface of the antiferromagnetic film in contact with the ferromagnetic film has a thickness of 5 nm to 30 nm. 38. The magnetoresistive head according to 38 or 39. 41. A magnetoresistive head according to claim 37, wherein at least a part of said antiferromagnetic film has a face-centered square structure. 42. At least a soft magnetic film, a non-magnetic spacer film, and a magnetoresistive effect film are sequentially laminated on a substrate, and a magnetoresistive sensor operating region is provided on the magnetoresistive film to form the sensor operating region. One side and the other side of the soft magnetic film, the non-magnetic spacer film, and the magnetoresistive film are cut off to form a cut surface, and the cut surface is covered with magnetic continuity. Thus, the ferromagnetic film and the antiferromagnetic film are sequentially laminated, the ferromagnetic film and the antiferromagnetic film are exchange-coupled at the interface, and the interface of the antiferromagnetic film in contact with the ferromagnetic film. Is composed of a thin film composed of nickel-manganese-oxygen, and the other region is composed of a thin film composed of nickel-manganese. Method of manufacturing the magnetoresistive head being characterized in that as formed by a sputtering in the gas. 43. At least a soft magnetic film, a non-magnetic spacer film, and a magnetoresistive film are sequentially laminated on a substrate, and a magnetoresistive sensor operating region is provided on the magnetoresistive film to form the sensor operating region. One side and the other side of the soft magnetic film, the non-magnetic spacer film, and the magnetoresistive film are cut off to form a cut surface, and the cut surface is covered with magnetic continuity. Thus, the ferromagnetic film and the antiferromagnetic film are sequentially laminated, the ferromagnetic film and the antiferromagnetic film are exchange-coupled at the interface, and the interface of the antiferromagnetic film in contact with the ferromagnetic film. Is composed of a thin film composed of nickel-manganese-oxygen, and the other region is composed of a thin film composed of nickel-manganese. As a method of obtaining a sex film, first, an argon gas or argon gas 10
% Of oxygen gas is added to form a thin film composed of nickel, manganese and oxygen by sputtering in an atmosphere of a mixed gas, and then a thin film composed of nickel-manganese is formed by sputtering in an atmosphere of argon gas. A method of manufacturing a magnetoresistive head, comprising forming an antiferromagnetic film. 44. After the formation of the ferromagnetic film, the surface of the ferromagnetic film in contact with the antiferromagnetic film is reduced by 10% to 10% of oxygen.
The method of manufacturing a magnetoresistive head according to claim 42 or 43, wherein the antiferromagnetic film is formed at least once after being exposed to a gas containing 0%. 45. The surface of the ferromagnetic film in contact with the antiferromagnetic film is exposed at least once to a gas containing 10% to 100% oxygen, and then the surface of the ferromagnetic film in contact with the antiferromagnetic film is etched. 45. The method according to claim 44, wherein the antiferromagnetic film is formed after the step. 46. The method according to claim 45, wherein the etching is directional ion beam etching. 47. The method of manufacturing a magnetoresistive head according to claim 45, wherein the ferromagnetic film is set at 1 to 10 nanometers in the etching. 48. A heat treatment is performed in a manufacturing process after forming the antiferromagnetic film.
49. The method of manufacturing a magnetoresistive head according to 3, 44, 45, 46 or 47. 49. The heat treatment at a temperature of 200 ° C. to 30 ° C.
49. The method of manufacturing a magnetoresistive head according to claim 48, wherein the method is performed at least once at 0 [deg.] C. for 1 hour to 20 hours. 50. The method according to claim 48, wherein the heat treatment is performed in a magnetic field within a range of 10 Oersteds to 3000 Oersteds.