JPH10163243A - Method for forming loop of lead wire in wire bonding equipment - Google Patents

Method for forming loop of lead wire in wire bonding equipment

Info

Publication number
JPH10163243A
JPH10163243A JP8334421A JP33442196A JPH10163243A JP H10163243 A JPH10163243 A JP H10163243A JP 8334421 A JP8334421 A JP 8334421A JP 33442196 A JP33442196 A JP 33442196A JP H10163243 A JPH10163243 A JP H10163243A
Authority
JP
Japan
Prior art keywords
point
loop
arc
wire
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8334421A
Other languages
Japanese (ja)
Other versions
JP3420905B2 (en
Inventor
Akira Ishibashi
昌 石橋
Yasuo Masuzawa
保雄 増澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
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Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to JP33442196A priority Critical patent/JP3420905B2/en
Publication of JPH10163243A publication Critical patent/JPH10163243A/en
Application granted granted Critical
Publication of JP3420905B2 publication Critical patent/JP3420905B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a loop forming method in a wire bonding equipment which is excellent in loop forming capability and can cope with diversified semiconductor devices. SOLUTION: After a lead wire is bonded to a first bonding point 2, a capillary 1 is a little lifted and reverse operation is performed. After the capillary 1 is lifted up to a loop-up point 4, the capillary 1 is moved from the loop-up point 4 to a second bond point 3, along a reference circular arc (d) wherein the first bond point 2 is the center. In this loop forming method, from the loop-up point 4 to a step point 7 set at an intermediate point inside the reference circular arc, a bending point 6 of a lead wire formed by reverse work is set as the center, and first loop-down operation is performed along a first circular arc setting the loop-up point 4 as a radius. From the step point 7 to the second bond point 3, the center position and the radius are changed, and second loop- down operation is performed along a second circular arc which gradually approaches the reference circular arc (d) from the step point 7 and comes into contact with the circular arc.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ワイヤボンディン
グ装置におけるリード線のループ形成方法に関する。
The present invention relates to a method for forming a loop of a lead wire in a wire bonding apparatus.

【0002】[0002]

【従来の技術】ワイヤボンディング装置では、半導体チ
ップ上のパッド(電極)とリードフレームのリード間を
結ぶリード線として、通常20〜38μmφ程度の金線
を用いている。このパッドとリード間を結ぶリード線の
ループ形状は製品品質に影響を及ぼすものであり、その
ループ形状は使用される金線の機械的性質、供給量、ボ
ンディング時のキャピラリーの移動軌跡などによって決
定される。中でも、キャピラリーの移動軌跡はループ形
状に重要な影響を与える。
2. Description of the Related Art In a wire bonding apparatus, a gold wire having a diameter of about 20 to 38 μm is usually used as a lead wire connecting a pad (electrode) on a semiconductor chip and a lead of a lead frame. The loop shape of the lead wire connecting this pad and the lead affects the product quality, and the loop shape is determined by the mechanical properties of the gold wire used, the supply amount, the path of the capillary movement during bonding, etc. Is done. In particular, the trajectory of the capillary has a significant effect on the loop shape.

【0003】図3〜図5を参照して、従来のワイヤボン
ディング装置におけるリード線のループ形成方法を説明
する。図3はワイヤボンディング時のキャピラリーの移
動軌跡図、図4は金線の供給量がループ長と同じ程度の
場合のループ形状図、図5は金線の供給量がループ長よ
りも長い場合のループ形状図である。
With reference to FIGS. 3 to 5, a method for forming a loop of a lead wire in a conventional wire bonding apparatus will be described. FIG. 3 is a diagram of the movement locus of the capillary at the time of wire bonding, FIG. 4 is a loop shape diagram when the supply amount of the gold wire is about the same as the loop length, and FIG. 5 is a case where the supply amount of the gold wire is longer than the loop length. It is a loop shape figure.

【0004】従来のワイヤボンディング装置において
は、図3に示すように、キャピラリー1は、第1ボンド
点(パッド)2に金線(図示せず)を接着した後、僅か
に引き上げられ、この引き上げ位置において第2ボンド
点3と反対方向へ僅かの距離引き戻された後(以後、こ
の動作を「リバース動作a」という)、第1ボンド点2
のほぼ真上のループアップ点4まで引き上げられる(以
後、この動作を「ループアップ動作b」という)。そし
て、さらに、このループアップ点4から第2ボンド点3
に向かって、ある点、例えば図示するように第1ボンド
点2を中心として半径rの円弧を描いて移動させた後
(以後、この動作を「ループダウン動作c」という)、
第2ボンド点3に金線を接着するものである。
In a conventional wire bonding apparatus, as shown in FIG. 3, a capillary 1 is slightly pulled up after a gold wire (not shown) is bonded to a first bond point (pad) 2, and the capillary 1 is pulled up. After being pulled back at the position by a small distance in the direction opposite to the second bond point 3 (hereinafter, this operation is referred to as “reverse operation a”), the first bond point 2
(Hereinafter, this operation is referred to as “loop-up operation b”). Further, from the loop-up point 4 to the second bond point 3
After moving toward a certain point, for example, an arc having a radius r around the first bond point 2 as shown in the figure (hereinafter, this operation is referred to as “loop-down operation c”)
A gold wire is bonded to the second bond point 3.

【0005】キャピラリー1を図3のような軌跡に沿っ
て移動させた場合、形成される金線のループ形状は、そ
の供給量によって次のように変わる。すなわち、図4は
金線5の供給量をループ長と同じ程度とした場合のルー
プ形状図を示すもので、キャピラリー1は、ループダウ
ン動作c(図3参照)によって形成される基準円弧d上
を移動していくため、供給された金線5を常に引っ張る
形となる。このため、最終的に形成されるループ形状
は、リバース動作a(図3参照)によって形成した金線
5の曲がり癖6を引き延ばす形となり、十分なループ高
さを取ることができなくなる。
When the capillary 1 is moved along a locus as shown in FIG. 3, the loop shape of the formed gold wire changes as follows depending on the supply amount. That is, FIG. 4 shows a loop shape diagram in the case where the supply amount of the gold wire 5 is set to be approximately the same as the loop length. , The supplied gold wire 5 is always pulled. Therefore, the finally formed loop shape becomes a shape in which the bending habit 6 of the gold wire 5 formed by the reverse operation a (see FIG. 3) is elongated, and a sufficient loop height cannot be obtained.

【0006】また、図5は金線5の供給量を曲がり癖6
を壊さない程度まで長くした場合のループ形状図を示す
もので、この時のループ形状は、金線5が余分に供給さ
れているために、曲がり癖6の部分の形状は維持できる
が、この曲がり癖6に続く直線部が垂れ下がってしま
い、金線5とチップエッジの間に十分なギャップをとる
ことができなくなる。
FIG. 5 shows that the supply amount of the gold wire 5 is
FIG. 3 shows a loop shape when the wire is long enough not to break the wire, and the loop shape at this time can maintain the shape of the bending habit 6 because the gold wire 5 is supplied extra. The straight portion following the bending habit 6 hangs down, and it is not possible to take a sufficient gap between the gold wire 5 and the chip edge.

【0007】[0007]

【発明が解決しようとする課題】上述したように、従来
のループ形成方法の場合、ループ形成能力に限界があ
り、多種多様の半導体デバイスへの対応が困難になって
いた。本発明は、このような問題を解決するためになさ
れたもので、ループ形成能力に優れ、多種多様の半導体
デバイスへの対応が可能なワイヤボンディング装置にお
けるループ形成方法を提供することを目的とする。
As described above, in the case of the conventional loop forming method, the loop forming ability is limited, and it has been difficult to cope with various semiconductor devices. The present invention has been made in order to solve such a problem, and an object of the present invention is to provide a loop forming method in a wire bonding apparatus which is excellent in loop forming ability and can cope with various semiconductor devices. .

【0008】[0008]

【課題を解決するための手段】上記目的を達成するた
め、本発明方法は、第1ボンド点にリード線を接着した
後、キャピラリーを僅かに引き上げてリバース動作を行
なわせ、次いでループアップ点まで引き上げた後、該ル
ープアップ点から第2ボンド点まで第1ボンド点を中心
点とした基準円弧に沿って移動させるようにしたワイヤ
ボンディング装置におけるリード線のループ形成方法に
おいて、前記ループアップ点から前記基準円弧内側の中
間適宜位置に設定したステップ点までは、前記リバース
動作によって形成されるリード線の曲がり癖を中心点と
し、かつ、前記ループアップ点を半径とする第1の円弧
に沿って第1のループダウン動作を行なわせ、前記ステ
ップ点から第2ボンド点までは、その中心点の位置と半
径を変えていくことにより前記ステップ点から前記基準
円弧に向かって徐々に接近して接する第2の円弧に沿っ
て第2のループダウン動作を行なわせることを特徴とす
るものである。
In order to achieve the above object, the method of the present invention comprises the steps of bonding a lead wire to a first bond point, slightly raising the capillary to perform a reverse operation, and then to a loop-up point. In the method of forming a loop of a lead wire in a wire bonding apparatus, the wire is moved from a loop-up point to a second bond point along a reference arc centered on the first bond point after being pulled up. Up to a step point set at an intermediate appropriate position inside the reference arc, the center point is the bending habit of the lead wire formed by the reverse operation, and along the first arc having the loop-up point as a radius. Perform the first loop-down operation, and change the position and radius of the center point from the step point to the second bond point. It is characterized in that to perform the second loop-down operation along more from the step point to a second arc contact and gradually approach toward the reference arc.

【0009】[0009]

【作用】上記のように構成した場合、ループアップ点か
らステップ点の間は、キャピラリーは第1の円弧に沿っ
て移動するので、リード線が引っ張られて曲がり癖が伸
びるようなことがなくなる。また、ステップ点から第2
ボンド点の間は、キャピラリーは前記曲がり癖を始点と
して徐々にその中心位置と半径を変えながら第2の円弧
に沿って基準円弧に接していくように移動するので、リ
ード線の曲がり癖を適度な力で引っ張りながら適正量で
配線していくことができる。このため、ループ形成時に
余分な力で金線を引っ張ることがなく、また、余分な金
線を供給することもなくなるので、安定したループ形状
を得ることができる。
With the above arrangement, the capillary moves along the first arc between the loop-up point and the step point, so that the lead wire is not pulled and the bending habit does not extend. Also, the second from the step point
Between the bond points, the capillary moves so as to contact the reference arc along the second arc while gradually changing its center position and radius from the above-mentioned curl, so that the curl of the lead wire can be moderately adjusted. Wiring can be performed in an appropriate amount while pulling with a great force. For this reason, the gold wire is not pulled by an extra force at the time of forming the loop, and the extra gold wire is not supplied, so that a stable loop shape can be obtained.

【0010】[0010]

【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。図1は本発明に係るループ形成方
法におけるキャピラリーの移動軌跡図である。なお、説
明を分かり易くするために、前述した従来例と同一の部
分には同一の符号を付して示した。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing the movement locus of a capillary in the loop forming method according to the present invention. In order to make the description easy to understand, the same parts as those in the above-described conventional example are denoted by the same reference numerals.

【0011】本発明方法が、前述した従来のループ形成
方法と異なる点は、ループアップ点4から第2ボンド点
6に至るループダウン動作の途中にステップ点7を設定
し、このステップ点7を中継点として、2段階のループ
ダウン動作e,fを行なわせるようにした点である。
The method of the present invention is different from the above-described conventional loop forming method in that a step point 7 is set during the loop-down operation from the loop-up point 4 to the second bond point 6, and this step point 7 is set. This is a point in which a two-step loop-down operation e, f is performed as a relay point.

【0012】すなわち、本発明方法は、従来のループダ
ウン動作cによって形成される基準円弧dの中間内側の
適宜位置であって、リバース動作aによって形成される
金線5曲がり癖6を中心点C1 とし、かつ、前記ループ
アップ点4を半径とする第1の円弧g上に位置してステ
ップ点7を設定し、このステップ点7とループアップ点
5との間は、曲がり癖6を中心として固定の半径r1
第1の円弧gに沿って第1のループダウン動作eを行な
わせることにより、キャピラリー1をこの第1の円弧g
に沿って基準円弧dの内側をステップ点7まで移動させ
るようにし、さらに、ステップ点7と第2ボンド点3と
の間は、前記ステップ点7と第2ボンド点3を結ぶ第2
の円弧hが前記ステップ点7を始点として前記基準円弧
dにその内側から徐々に近づいていって接するように、
第2の円弧hの中心点をC1 からC2 の位置に移動して
いくとともに、その半径もr1 からr2 に変えていくこ
とにより、この第2の円弧hに沿って第2のループダウ
ン動作fを行なわせ、キャピラリー1をこの第2の円弧
hに沿って第2ボンド点3まで移動させるようにしたも
のである。
That is, according to the method of the present invention, the gold wire 5 formed by the reverse operation a and the bending habit 6 at the appropriate position inside the reference arc d formed by the conventional loop-down operation c 1 and a step point 7 is set on a first arc g having a radius of the loop-up point 4, and a center between the step point 7 and the loop-up point 5 is a bending habit 6. By performing a first loop-down operation e along a first arc g having a fixed radius r 1 , the capillary 1 is moved to the first arc g.
Is moved to the step point 7 along the inside of the reference arc d, and between the step point 7 and the second bond point 3, a second point connecting the step point 7 and the second bond point 3 is formed.
From the step point 7 as a starting point, the arc h gradually approaches and touches the reference arc d from the inside thereof.
The center point of the second arc h with moves from C 1 to the position of the C 2, its radius by going changed from r 1 to r 2, the second along the second arc h A loop-down operation f is performed to move the capillary 1 to the second bond point 3 along the second arc h.

【0013】このように、ステップ点7を中に挟んで2
段階のループダウン動作を行なわせると、ループアップ
点5からステップ点7に至る第1のループダウン動作e
時には、キャピラリー1は基準円弧dの内側を通るの
で、金線5が引っ張られて曲がり癖6が伸びるようなこ
とがなくなり、また、ステップ点7から第2ボンド点3
に至る第2のループダウン動作f時には、ステップ点7
から第2ボンド点3を結ぶ第2の円弧hは、その中心点
の位置と半径をC1 →C2 、r1 →r2 のように徐々に
変えながら基準円弧dに接するように移動していくの
で、金線5の曲がり癖6も徐々に引っ張られていき、金
線5の供給量も適正となる。
As described above, step point 7 is sandwiched between 2 points.
When the loop-down operation of the stage is performed, the first loop-down operation e from the loop-up point 5 to the step point 7 is performed.
Since the capillary 1 sometimes passes through the inside of the reference arc d, the gold wire 5 is not pulled and the bending habit 6 is not extended, and the step point 7 and the second bonding point 3
At the time of the second loop-down operation f leading to
The second arc h connecting from to the second bond point 3 moves so as to be in contact with the reference arc d while gradually changing the position and radius of the center point as C 1 → C 2 , r 1 → r 2. Therefore, the bending habit 6 of the gold wire 5 is also gradually pulled, and the supply amount of the gold wire 5 becomes appropriate.

【0014】この結果、ループ形成時に余分な力で金線
を引っ張ることがなく、また、余分な金線を供給するこ
ともなくなるので、図2に示したように、最終的に金線
5のループ形状は曲がり癖6がそのまま残るとともに、
この曲がり癖6に続く金線部分が直線的に伸びた安定し
たループ形状を得ることができる。このため、十分なル
ープ高さをとることができると同時に、金線とチップエ
ッジ間にも十分なギャップをとることができ、どのよう
な半導体デバイスに対しても用いることが可能となる。
As a result, the gold wire is not pulled by an extra force at the time of forming the loop, and the extra gold wire is not supplied, so that as shown in FIG. In the loop shape, the bending habit 6 remains as it is,
A stable loop shape in which the gold wire portion following the bending habit 6 extends linearly can be obtained. For this reason, a sufficient loop height can be obtained, and at the same time, a sufficient gap can be provided between the gold wire and the chip edge, so that the semiconductor device can be used for any semiconductor device.

【0015】なお、前記の例では、図面を分かり易くす
るために、便宜上、第2の円弧hの最終的な中心点C2
の位置を第1ボンド点2に一致させて描いたが、最終的
な中心点C2 の位置はこの位置に限定されるものではな
い。少なくとも、第2の円弧hが最終的に基準円弧dに
接するようになる位置であればよい。また、前記の例で
は、リード線として金線を用いたが、他の金属線を用い
た場合であっても同様に実施できることは勿論である。
In the above-mentioned example, for the sake of simplicity, the final center point C 2 of the second arc h is shown for the sake of simplicity.
The position has been drawn to match the first bonding point 2, the final position of the center point C 2 is not limited to this position. At least a position at which the second arc h finally comes into contact with the reference arc d may be used. Further, in the above-described example, the gold wire is used as the lead wire.

【0016】[0016]

【発明の効果】以上説明したように、本発明方法による
ときは、ループアップ点から基準円弧内側の中間適宜位
置に設定したステップ点までは、リバース動作によって
形成されるリード線の曲がり癖を中心点とし、かつ、ル
ープアップ点を半径とする第1の円弧に沿って第1のル
ープダウン動作を行なわせ、ステップ点から第2ボンド
点までは、その中心点の位置と半径を変えていくことに
よりステップ点から基準円弧に向かって徐々に接近して
接する第2の円弧に沿って第2のループダウン動作を行
なわせるようにしたので、ループ形成時に余分な力でリ
ード線を引っ張ることがなく、また、余分なリード線を
供給することもなくなり、安定した形状のループを形成
することができる。このため、どのような半導体デバイ
スに対しても適用することが可能となる。また、ループ
形状が安定するため、不良品の発生率が小さくなり、生
産効率も向上できる。
As described above, according to the method of the present invention, the bending habit of the lead wire formed by the reverse operation is centered from the loop-up point to the step point set at an appropriate intermediate position inside the reference arc. A first loop-down operation is performed along a first circular arc having a point and a loop-up point as a radius, and the position and radius of the center point are changed from the step point to the second bond point. As a result, the second loop-down operation is performed along the second arc that gradually approaches and comes into contact with the reference arc from the step point, so that the lead wire may be pulled by extra force when forming the loop. No extra lead wire is supplied, and a loop having a stable shape can be formed. Therefore, the present invention can be applied to any semiconductor device. Further, since the loop shape is stabilized, the incidence of defective products is reduced, and the production efficiency can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のループ形成方法におけるキャピラリー
の移動軌跡図である。
FIG. 1 is a diagram illustrating a movement locus of a capillary in a loop forming method according to the present invention.

【図2】本発明のループ形成方法における金線のループ
形状図である。
FIG. 2 is a loop shape diagram of a gold wire in the loop forming method of the present invention.

【図3】従来のループ形成方法におけるキャピラリーの
移動軌跡図である。
FIG. 3 is a movement locus diagram of a capillary in a conventional loop forming method.

【図4】従来のループ形成方法において金線の供給量が
ループ長と同じ程度の場合のループ形状図である。
FIG. 4 is a loop shape diagram when a supply amount of a gold wire is approximately the same as a loop length in a conventional loop forming method.

【図5】従来のループ形成方法において金線の供給量が
ループ長よりも長い場合のループ形状図である。
FIG. 5 is a diagram showing a loop shape when a supply amount of a gold wire is longer than a loop length in a conventional loop forming method.

【符号の説明】[Explanation of symbols]

1 キャピラリー 2 第1ボンド点(パッド) 3 第2ボンド点(リード) 4 リープアップ点 5 金線(リード線) 6 曲がり癖 7 ステップ点 8 金線(リード線) a リバース動作 b ループアップ動作 c ループダウン動作 d 基準円弧 e 第1のループダウン動作 f 第2のループダウン動作 g 第1の円弧 h 第2の円弧 C1 第1の円弧の中心点 C2 第2の円弧の最終中心点 r1 第1の円弧の半径 r2 第2の円弧の最終半径REFERENCE SIGNS LIST 1 Capillary 2 First bond point (pad) 3 Second bond point (lead) 4 Leap-up point 5 Gold wire (lead wire) 6 Bending habit 7 Step point 8 Gold wire (lead wire) a Reverse operation b Loop-up operation c loop down operation d reference arc e first loop down operation f the second loop-down operation g first arc h second arc C 1 first arc center point C 2 second circular final center point r 1 Radius of the first arc r 2 Final radius of the second arc

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 第1ボンド点にリード線を接着した後、
キャピラリーを僅かに引き上げてリバース動作を行なわ
せ、次いでループアップ点まで引き上げた後、該ループ
アップ点から第2ボンド点まで第1ボンド点を中心点と
した基準円弧に沿って移動させるようにしたワイヤボン
ディング装置におけるリード線のループ形成方法におい
て、 前記ループアップ点から前記基準円弧内側の中間適宜位
置に設定したステップ点までは、前記リバース動作によ
って形成されるリード線の曲がり癖を中心点とし、か
つ、前記ループアップ点を半径とする第1の円弧に沿っ
て第1のループダウン動作を行なわせ、 前記ステップ点から第2ボンド点までは、その中心点の
位置と半径を変えていくことにより前記ステップ点から
前記基準円弧に向かって徐々に接近して接する第2の円
弧に沿って第2のループダウン動作を行なわせることを
特徴とするワイヤボンディング装置におけるリード線の
ループ形成方法。
After bonding a lead wire to a first bond point,
After the capillary was slightly raised to perform the reverse operation, and then raised to the loop-up point, the capillary was moved from the loop-up point to the second bond point along a reference arc centered on the first bond point. In the method of forming a loop of a lead wire in a wire bonding apparatus, from the loop-up point to a step point set at an intermediate appropriate position inside the reference arc, a bending habit of the lead wire formed by the reverse operation is set as a center point, In addition, a first loop-down operation is performed along a first arc having the loop-up point as a radius, and the position and radius of the center point are changed from the step point to the second bond point. A second loop down along a second arc gradually approaching and coming into contact with the reference arc from the step point. Loop forming method of the lead in a wire bonding apparatus, characterized in that to perform the operation.
JP33442196A 1996-12-02 1996-12-02 Lead wire loop forming method in wire bonding apparatus Expired - Lifetime JP3420905B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33442196A JP3420905B2 (en) 1996-12-02 1996-12-02 Lead wire loop forming method in wire bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33442196A JP3420905B2 (en) 1996-12-02 1996-12-02 Lead wire loop forming method in wire bonding apparatus

Publications (2)

Publication Number Publication Date
JPH10163243A true JPH10163243A (en) 1998-06-19
JP3420905B2 JP3420905B2 (en) 2003-06-30

Family

ID=18277193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33442196A Expired - Lifetime JP3420905B2 (en) 1996-12-02 1996-12-02 Lead wire loop forming method in wire bonding apparatus

Country Status (1)

Country Link
JP (1) JP3420905B2 (en)

Also Published As

Publication number Publication date
JP3420905B2 (en) 2003-06-30

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