JPH10160579A - Temperature measuring device and board thermal treatment device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To measure temperature accurately. SOLUTION: Among beat radiation radiated from a board (W), the heat radiation passing through a semi-transparent mirror 611 enters a probe 620a and is led to a radiation pyrometer 630a. Heat radiation passing through a transparent element 612 enters a probe 620b and is led to a radiation pyrometer 630b. Then, respective semi-transparent radiant intensity and nonreflective radiant intensity of the radiation pyrometer 630a and the radiation pyrometer 630b are derived, on the basis of these values a processor 640 calculates temperature of the board (W) and thickness of a film created under the board (W) using a given operation expression, and based on the value temperature and power of a lamp 20 are controlled. Thus, because temperature of the board (W) is derived considering transmission factor and reflectance of the semi-transparent mirror 611, temperature is accurately measured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature measuring device for measuring the temperature of a device under test based on heat radiation from the device under test.
The present invention also relates to a substrate heat treatment apparatus that controls heating of a substrate based on a temperature measurement result of a substrate such as a liquid crystal glass substrate and a semiconductor wafer (hereinafter, referred to as a “substrate”).

[0002]

2. Description of the Related Art Conventionally, a method of measuring a temperature in a heat treatment apparatus for a semiconductor substrate has been disclosed in Japanese Patent Application Laid-Open No. 6-341905.
There is a non-contact type technology as disclosed in Japanese Unexamined Patent Publication (Kokai) No. H10-26095. That is, in a heat treatment chamber which horizontally supports a substrate to be subjected to a heat treatment and has upper and lower walls close to and above the substrate, a conduit is provided in a cooling plate below the lower wall. The heat radiation incident on the conduit is guided to a radiation pyrometer, and the temperature T of the substrate is measured based on the radiation intensity captured there.

[0003] Specifically, by considering the reflectance r of the lower wall as 1 while taking into account the multiple reflections occurring between the substrate and the lower reflector, the intensity of the incident radiation I to the conduit of the thermal radiation and the blackness are reduced. The relationship between the body radiation intensity L0 (T) is approximately I = L0 (T), and the blackbody radiation intensity L0 (T) is based on the equation obtained using the Stefan-Boltzmann equation. Then, the incident radiation intensity I to the conduit is measured, and T is obtained from the incident radiation intensity I by using the above-described equation.

[0004]

In the above technique, the temperature T0 of the substrate is determined assuming that the lower wall completely satisfies the reflectance r = 1. The material which is 1 and is completely “1” is not known. Therefore, in the above-described method, a difference occurs between the temperature T obtained from the incident radiation intensity I and the actual temperature of the actual substrate, so that highly accurate temperature measurement cannot be performed.

An object of the present invention is to overcome the above-mentioned problems in the prior art, and to provide a temperature measuring apparatus capable of performing accurate temperature measurement and a substrate heat treatment apparatus using the same. .

[0006]

According to a first aspect of the present invention, there is provided a temperature measuring apparatus for measuring the temperature of a device under test based on heat radiation from the device. A semi-transmissive mirror that imperfectly transmits the heat radiation; a first radiation intensity measuring means for obtaining a semi-transmissive radiation intensity which is an intensity of the heat radiation transmitted through the semi-transparent mirror; Second radiation intensity measuring means for determining a non-reflection radiation intensity which is an intensity of the heat radiation in a state where the heat radiation is not performed,
Temperature calculating means for calculating the temperature of the measured object based on the semi-transmissive radiation intensity and the non-reflection radiation intensity.

The device according to a second aspect of the present invention is the temperature measuring device according to the first aspect, wherein the semi-transparent mirror has a disk shape centered on a position facing the first radiation intensity measuring means. It is characterized by.

According to a third aspect of the present invention, there is provided the temperature measuring apparatus according to any one of the first and second aspects, wherein the surface of the semi-transparent mirror on the side of the first radiation intensity measuring means is provided. A portion other than the portion facing the first radiation intensity measuring means is blackened.

According to a fourth aspect of the present invention, there is provided the temperature measuring apparatus according to any one of the first to third aspects, wherein the first radiation intensity measuring means and the second radiation intensity measuring means are provided. Or, further comprising rotating means for rotating any one of the measured objects, wherein the relative position of the first radiation intensity measuring means and the second radiation intensity measuring means with respect to the measured object is changed by the rotating means. It is characterized by being replaced with each other.

According to a fifth aspect of the present invention, there is provided a temperature measuring apparatus for measuring the temperature of a measured object based on heat radiation from the measured object, wherein the temperature of the first and second wavelengths is measured. Among the heat radiation group including the heat radiation, the heat radiation of the first wavelength is incompletely transmitted, and the semi-transparent mirror that transmits the heat radiation of the second wavelength almost completely, and the semi-transparent mirror that transmits the heat radiation of the second wavelength. A radiation intensity measuring means for obtaining a semi-transmissive radiation intensity which is the intensity of the heat radiation of the first wavelength and a non-reflection radiation intensity which is the intensity of the heat radiation of the second wavelength in the heat radiation group; Temperature calculating means for calculating the temperature of the measured object based on the non-reflected radiation intensity.

According to a sixth aspect of the present invention, there is provided the temperature measuring apparatus according to the fifth aspect, wherein the semi-transparent mirror has a disk shape centered on a position facing the radiation intensity measuring means. And

A device according to a seventh aspect of the present invention is the temperature measuring device according to any one of the fifth and sixth aspects, wherein the radiation on the surface of the semi-transparent mirror on the side of the radiation intensity measuring means is provided. A portion other than the portion facing the intensity measuring means is blackened.

An apparatus according to an eighth aspect of the present invention is the temperature measuring apparatus according to any one of the fifth to seventh aspects, wherein each of the first wavelength and the second wavelength is the target wavelength. It is characterized in that the emissivity of the measurement object is included in a wavelength range that does not substantially depend on temperature.

Further, an apparatus according to a ninth aspect of the present invention includes the temperature measuring device according to any one of the first to eighth aspects as a temperature measuring means, wherein the object to be measured is a substrate and heating means is provided. A substrate heat treatment apparatus for heating the substrate, comprising: a heating control unit that controls an operation of the heating unit based on the temperature of the substrate obtained by the temperature measurement unit.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION

[0016]

[1. Prior to the description of the embodiments, the principle of temperature measurement of the present invention will be described below.

First, assuming that the substrate does not transmit light, its emissivity .epsilon. And reflectance .rho.
(Takes a value of "1") is as follows.

[0018]

(Equation 1)

The non-reflection radiation intensity I0, which is the radiation intensity of heat radiation from the substrate that does not transmit through the semi-transparent mirror, is expressed using the radiation intensity L0 (T) of a black body at a temperature T including the gain of the measurement system. The following equation is obtained.

[0020]

(Equation 2)

In the equation (2), T0 represents the temperature of the substrate. In the present invention, the semi-transparent mirror does not necessarily mean a mirror having a reflectance of 50%, but means a mirror having a reflectance other than 0% and 100%. Therefore, incomplete transmission in the present invention means that the transmittance is between 0% and 100%.

When the substrate is brought close to the semi-transparent mirror, multiple reflections occur between the substrate and the semi-transparent mirror. FIG. 1 is an explanatory diagram of multiple reflection of heat radiation between a substrate and a semi-transparent mirror. Hereinafter, the reflectance r and the transmittance t of the semi-transparent mirror (both are “0” to
This will be described using “1”.

First, the thermal radiation of the non-reflection radiation intensity I0 radiated from the lower surface of the substrate W is reflected upward by the semi-transparent mirror HM at the intensity of rI0 and transmitted downward by the intensity of tI0. The reflected heat radiation is reflected on the lower surface of the substrate W with an intensity of rρI0. The reflected heat radiation is again incident on the semi-transparent mirror HM and transmitted with an intensity of trρI0.
In this way, when multiple reflection occurs between the substrate W and the semi-transmissive mirror HM, the intensity of the heat radiation after one round trip returning from the semi-transparent mirror HM to the semi-transparent mirror HM via the reflection by the substrate W attenuates rρ times. ing. Therefore, the semi-transmissive radiation intensity I, which is the intensity of the heat radiation finally captured below the semi-transparent mirror HM
Is the sum of the intensities of the thermal radiation transmitted through the semi-transparent mirror HM after one to infinite multiple reflections. And this sum is the first term tI
0, the geometric series of the common ratio rρ is given by the following equation.

[0024]

(Equation 3)

When the above three equations are simultaneously solved for the emissivity ε, the reflectance ρ of the substrate W, and the radiation intensity L 0 (T 0) of the substrate W, the following three equations are obtained.

[0026]

(Equation 4)

[0027]

(Equation 5)

[0028]

(Equation 6)

In the following embodiment, the semi-transmitted radiation intensity I,
The non-reflective radiation intensity I0 is measured, and the values and the values of the reflectance r and the transmittance t of the semi-transparent mirror, which are known in advance, are used in equations (4), (5), and (6) to obtain the emissivity ε, The reflectance ρ and the radiation intensity L0 (T0) of the substrate W are obtained. Further, as shown in FIG. 2, a graph showing the radiation intensity L0 (T) with respect to the temperature T of the black body, the radiation intensity L0 (T
0) is used to determine the temperature T0 of the substrate W.

Further, the relational expression between the emissivity ε of the silicon substrate W and the thickness d of the thin film (see Shiro Fujiwara (ed.): Optical Thin Film, December 18, Kyoritsu Shuppan (1986)) is given by the following expression. .

[0031]

(Equation 7)

In this equation, ρ1 is the reflectance at the boundary between the thin film and air, ρ2 is the reflectance at the boundary between the thin film and Si, θ is the angle between the measurement direction and the normal to the substrate W, λ is the measurement wavelength, and n is The refractive index of the thin film, d, represents the film thickness.

The equation (7) uses ρ1, ρ2 determined by Fresnel's formula, θ, λ, n measured in advance, and the emissivity ε of the substrate W determined by equation (4). The thickness d of W is determined.

In the embodiment described below, the temperature control is performed based on the temperature T0 of the substrate W obtained as described above, and the completion of the heating / film forming process is determined based on whether the film thickness d has reached a predetermined value. Control.

[0035]

[2. First Embodiment><2-1. Mechanical Structure and Operation> FIG. 3 is a sectional view of the substrate heat treatment apparatus 1 according to the first embodiment. In each of FIG. 4, FIG. 4 and FIG. 6, a three-dimensional coordinate system XYZ that defines a horizontal plane as an XY plane and a vertical direction as a Z-axis direction is defined. Hereinafter, the configuration of this device will be described with reference to FIG.

The substrate heat treatment apparatus 1 according to the first embodiment mainly includes a furnace body 10, a lamp 20, a quartz glass 30, a substrate support section 40, a linear motor 50, a temperature / film thickness measurement section 60, a control section 70, a lamp A driver 80 and a motor driver 90 are provided.

The furnace body 10 is a box-shaped furnace body having a reflector 110 at an upper part and a housing 120 at a lower part, and has a number of cooling pipes 130 therein (only a part of the cooling pipes is shown in FIG. 3). Is provided. A gas supply port GI and a gas discharge port GO are provided on a side surface of the furnace body 10, and a gas supply pipe 140 and a gas discharge pipe 15 are provided in the housing 120.
0 is provided, and a processing gas is supplied at a predetermined timing during the heating / film-forming process.

A large number of lamps 20 are provided on the lower surface of the reflector 110 (only a part of the lamps are shown in FIG. 3).

The quartz glass 30 is provided below the lamp 20 and transmits the heat radiation therefrom.

The substrate supporting section 40 supports the substrate W, and rotates the substrate W by rotating the substrate W about the Z-axis direction.

The linear motor 50 is a magnetic levitation type linear motor, and rotates the substrate support 40 supporting the substrate W.

The temperature / thickness measuring section 60 measures the heat radiation intensity from the substrate W, which will be described in detail later, obtains the temperature T0, the film thickness d, and the like of the substrate W based on the intensity, and controls those signals. Part 70
Send to

As will be described in detail later, the control unit 70 sends a control signal for the lamp 20 to a later-described lamp driver 80 and sends a drive signal to a later-described motor driver 90 at a predetermined timing.

The lamp driver 80 supplies power to the lamp 20 in response to a control signal from the control unit 70.

The motor driver 90 receives a drive signal from the control unit 70 and supplies power to the linear motor 50.

Next, the main parts will be described in more detail.

The substrate supporting portion 40 is composed of a supporting ring 410 for supporting the peripheral portion of the substrate W and supporting legs 420 for supporting at several points on the lower surface thereof. Is provided, and the substrate W
Are fitted on the upper surface of an annular rail 520 provided along the periphery of the rail. Then, the levitating unit 510 levitates and slides along the rail by the electric power from the motor driver 90, and the substrate supporting unit 40 is rotationally driven to rotate the substrate W.
This rotation makes the heating of the substrate W uniform in each part of the substrate W, and also uses the probe 620a to move the measurement target position of the substrate W for measuring the semi-transmitted radiation intensity I and the non-reflected radiation intensity I0 from the substrate W as described later. And the probe 620b.

The temperature / film thickness measuring section 60 includes a transmission plate 610, probes 620a and 620b, radiation pyrometers 630a and 63.
0b, and an operation unit 640.

FIG. 4 is a plan view of the transmission plate 610 according to the first embodiment. The transmission plate 610 is a disc-shaped member in which a transparent member 612 is provided around a semi-transparent mirror 611, and is fixed on the upper surface of the housing 120.

The semi-transparent mirror 611 is connected to a probe 620a to be described later.
And a mirror-like upper surface, and imperfectly reflects and transmits heat radiation from above. In addition, on the lower surface of the semi-transparent mirror 611, the portion facing the probe 620a is transparent, and the other portions are blackened, so that heat radiation from above is totally absorbed and not reflected.

The transparent member 612 has a property of transmitting heat radiation from the upper substrate W almost completely. The transparent member 612 is made incident on a probe 620b, which will be described below, provided therebelow, and the non-reflection radiation intensity I0 is measured. Radiation pyrometer 630b
Can be measured accurately.

The probes 620a and 620b are optical fibers for transmitting the incident thermal radiation, and transmit the thermal radiation to the radiation pyrometers 630a and 630b at the upper end in the figure.

The radiation pyrometers 630a and 630b convert the incident high-temperature heat radiation into electric signals representing a voltage, that is, a semi-transmissive radiation intensity I and a non-reflection radiation intensity I 0, respectively, and send them to the arithmetic unit 640.

The combination of the probe 620a and the radiation pyrometer 630a corresponds to the first radiation intensity measuring means, and the combination of the probe 620b and the radiation pyrometer 630b corresponds to the second radiation intensity measuring means. Equivalent to.

Further, the arithmetic unit 640 is provided with a CPU (not shown).
And pyrometers 630a and 630b
Out of the signals indicating the semi-transmissive radiation intensity I and the non-reflection radiation intensity I0 transmitted from time to time, the probe 620a and 6
The value measured at the timing located above each of 20b is used as a set of radiation intensity signals. That is,
Timing for obtaining both radiation intensities is synchronized to measure the same position on the substrate W. By doing so, the measurement target positions for obtaining the semi-transmissive radiation intensity I and the non-reflection radiation intensity I0 are common. Therefore, more accurate temperature measurement and film thickness measurement can be performed.

Then, the measurement of the substrate W is performed using the thus obtained semi-transmissive radiation intensity I and non-reflection radiation intensity I 0 and each parameter previously stored in the memory and used in the section of the principle of the invention. The temperature T0, the emissivity ε, the reflectance ρ, and the film thickness d of the target position are obtained, and these are sent to the control unit 70.

<2-2. Processing and Control> FIG. 5 is a diagram showing a control flow of the substrate heat treatment apparatus 1 according to the first embodiment. Hereinafter, the heating / film forming process and the control of the lamp 20 in this apparatus will be described with reference to FIG.

First, a substrate W is carried in from a carry-in port (not shown) with the device surface facing down, and is supported by the substrate support 40. Here, the substrate W is supported with the device surface facing down. In order to measure the film thickness d by the temperature / film thickness measuring unit 60, the heat radiation from the thin film generated on the device surface is measured by the probes 620a and 620b. This is because it is necessary to make the light incident on

Next, the control unit 70 sends a control signal to a processing gas supply means (not shown) to supply a processing gas for heating and film forming processing into the furnace body 10 and sends a control signal to the lamp driver 80. The lamp 20 is turned on to start heating. At the same time, a drive signal is sent to the motor driver 90 to drive the linear motor 50 to rotate the substrate support 40, thereby rotating the substrate W. Note that the rotation of the substrate W is continued during the following heating and film forming processing.

The radiant heat emitted from the lamp 20 passes through the quartz glass 30 and reaches the substrate W, whereby the substrate W is heated, and heat radiation corresponding to the temperature is generated.

The heat radiation from the substrate W transmitted through the semi-transparent mirror 611 of the transmission plate 610 enters the probe 620a and is guided to the radiation pyrometer 630a. Similarly, heat radiation from the substrate W transmitted through the transparent member 612 of the transmission plate 610 is transmitted to the probe 6.
20b, and is guided to the radiation pyrometer 630b.

From the radiation pyrometer 630a, the semi-transmission radiation intensity I of the heat radiation transmitted through the semi-transparent mirror 611, and from the radiation pyrometer 630b, the non-reflection radiation intensity I 0 of the heat radiation transmitted through the transparent member 612, respectively. The represented radiation intensity signal is sent to arithmetic unit 640.

The calculating section 640 calculates the semi-transmitted radiation intensity I, the non-reflected radiation intensity I 0, and the arithmetic section 640 obtained in advance.
Equation (4) described in the principle of the present invention based on the transmittance t, the reflectance r, and the like of the semi-transmissive mirror 611 stored in the internal memory,
Using the equations (5) and (6), the temperature T0 of the substrate W and the substrate W
Of the above-mentioned ρ1, ρ2, θ, which are obtained in advance and stored in the memory.
[lambda], n, and [epsilon] obtained by equation (4) are expressed by equation (7).
Is used to determine the film thickness d formed on the substrate W.

In the first embodiment, a conversion table corresponding to a graph showing the radiation intensity L0 (T) with respect to the temperature T of the black body as shown in FIG. Then, the temperature T0 of the substrate W is obtained using this.

Then, the substrate W obtained by the arithmetic unit 640 is obtained.
Is transmitted to the control unit 70 as a temperature signal. Based on the temperature T0, the control unit 70 sends a control signal to the lamp driver 80 to keep the temperature of the substrate W at a predetermined value. The corresponding electric power is supplied to the lamp 20.

The film thickness signal obtained by the arithmetic unit 640 is sent to the control unit 70 in the same manner as the temperature signal, and the control unit 70 determines whether the obtained film thickness d has reached a predetermined thickness. , Depending on whether the film thickness has reached a predetermined value or not.
A control signal indicating a power of 0 is sent to the lamp driver 80. While the control signal is ON, the lamp driver 80 performs the heating / film forming process on the substrate W while performing the temperature control for keeping the temperature T0 of the substrate W constant as described above.
When the control signal is turned off, the supply of power to the lamp 20 is stopped, and the heating / film forming process is terminated.

As described above, the temperature / film thickness measuring section 60 of the substrate heat treatment apparatus 1 of the first embodiment has the semi-transparent mirror 6.
11, a semi-transmissive radiation intensity I, which is the intensity of thermal radiation transmitted through
In addition, since the temperature T0 of the substrate W is calculated by the calculation unit 640 based on the non-reflected radiation intensity I0 which is the intensity of the heat radiation transmitted through the transparent member 612, the reflectance r and the transmittance t of the semi-transparent mirror 611 are calculated. In consideration of the above, the temperature T0 and the film thickness d of the substrate W can be obtained, so that the temperature measurement and the film thickness measurement of the substrate with high accuracy can be performed.

Further, since the semi-transmissive mirror 611 has a disk shape with the probe 620a at the center, the heat radiation incident on the probe 620a is reflected by the multi-reflected heat radiation between the semi-transparent mirror 611 and the substrate W around it. Since the influences are uniformly received, more accurate temperature measurement and film thickness measurement can be performed.

Further, since the lower surface of the semi-transparent mirror 611 is blackened, the heat radiation transmitted through the mirror surface of the upper surface of the semi-transparent mirror 611 is reflected on the lower surface and is multiply reflected in the semi-transparent mirror before being incident on the probe 620a. Since only the heat radiation not reflected on the lower surface of the probe 620 enters the probe 620a, the transflective radiation intensity I can be accurately measured by the radiation pyrometer 630a. In addition, more accurate temperature measurement and film thickness measurement can be performed.

Further, by rotating the substrate W and synchronizing the timing for capturing the semi-transmissive radiation intensity I and the non-reflection radiation intensity I 0 to measure the same position on the substrate W, Since thermal radiation can be captured, more accurate temperature measurement and film thickness measurement can be performed.

Further, in the substrate heat treatment apparatus 1 of the first embodiment, the lamp 20 is controlled based on the highly accurate measurement result of the temperature T0 and the film thickness d of the substrate W by the temperature / film thickness measuring section 60 as described above. Since the temperature control and the lamp power control are performed, the substrate W can be heated and formed with high accuracy.

Further, since the film thickness is not controlled by treating the substrate W at a predetermined temperature for a predetermined time as in the conventional apparatus, the operator takes out the substrate W from the furnace body 10, measures the film thickness, and returns it again. It is necessary to perform a warm-up operation in which the temperature T0 of the substrate W is not constant during the heating and film forming process, and the substrate is heated to a predetermined temperature using a dummy substrate or the like in advance. Since there is no heat treatment, it is possible to perform a heating and film forming process with high processing efficiency.

[0073]

[3. FIG. 6 is a sectional view of a substrate heat treatment apparatus 2 according to a second embodiment. FIG. 7 is a plan view of a transmission plate according to the second embodiment. Hereinafter, the substrate heat treatment apparatus 2 according to the second embodiment will be described with reference to FIGS. 6 and 7 focusing on differences from the substrate heat treatment apparatus 1 according to the first embodiment.

The transmission plate 610 in the substrate heat treatment apparatus 2 is provided with a disk-shaped semi-transparent mirror 611 at the center. The upper surface is a mirror surface having a property described in detail later. Conversely, on the lower surface, a portion facing the probe 620 is transparent, and the other portions are blackened.

FIG. 8 is a diagram showing the properties of the semi-transparent mirror 611 according to the second embodiment. The semi-transmissive mirror 611 has both the properties of a semi-transparent mirror and the property of being transparent. That is, as shown, the semi-transparent mirror 611 has a semi-transmissive wavelength λ 1 = 0.9.
0.95 μm and the total transmission wavelength λ 2 = 1.0 μm.
The transmittance t sharply increases in a wavelength region near μm, and the reflectance r sharply decreases near 0.95 μm in wavelength. In the wavelength region of about 0.95 μm or less, the transmittance t and the reflectance r are both about “0.5”. In the wavelength region above about 0.95 μm, the transmittance t
Is almost “1”, and conversely, the reflectance r is almost “0”. Therefore, this semi-transparent mirror 611 is about 0.95 μm
In the following wavelength range, the property of the semi-transparent mirror is exhibited, but in the wavelength range higher than that, the property is transparent. Semi-transparent mirror 611
In order to have such properties, in the second embodiment, the mirror surface is made to have a thickness corresponding to, for example, a wavelength at which a thin film of SiO2 and TiO2 is transmitted, and is laminated on each other.

Further, only one probe 620 is provided immediately below the center of the housing 20 so that one end thereof faces the semi-transmissive mirror 611 in the housing 20. 635 in total.

Further, when a two-color pyrometer 635 receives a heat radiation group including heat radiation of two wavelengths of the above-described semi-transmission wavelength λ1 and total transmission wavelength λ2, the two-color pyrometer 635 outputs a semi-transmission wavelength λ1 from the heat radiation group. This is a pyrometer capable of extracting heat radiation and heat radiation of the total transmission wavelength λ2 and measuring the radiation intensity of the heat radiation of each wavelength. The combination of the probe 620 and the two-color pyrometer 635 corresponds to a radiation intensity measuring unit.

The configuration and operation other than the above are the first
This is the same as the device of the embodiment.

With this configuration, this apparatus performs the following control.

The heat radiation emitted downward from the substrate W supported on the substrate support part 40 with the device surface down is incident on the upper end of the probe 620 as a heat radiation group in which various wavelengths are mixed.

Then, the above-mentioned semi-transmission wavelength λ1 and total transmission wavelength λ2 are extracted from the heat radiation sent to the two-color pyrometer 635 by the probe 620, and the radiation intensity of the heat radiation of the semi-transmission wavelength λ1 is semi-transmitted. The radiation intensity I and the radiation intensity of the total transmission wavelength λ2 are obtained as the non-reflection radiation intensity I0, respectively, and sent to the arithmetic unit 640 as a radiation intensity signal. Then, the temperature T0 and the film thickness d of the substrate W are obtained based on these signals in the same manner as in the first embodiment, and the temperature control and the lamp power of the lamp 20 are performed based on these.

However, the semi-transmission wavelength λ1 and the total transmission wavelength λ2 need to satisfy the following conditions. FIG. 8 is a diagram showing the temperature dependence of the emissivity of thermal radiation of Si. As shown in the figure, the emissivity of Si rapidly decreases in the wavelength range of thermal radiation between 1.0 and 2.0 μm at a temperature of about 800 ° K or less, and further decreases by about 15 μm.
The emissivity gradually increases over the wavelength range of m.

On the contrary, the wavelength of the heat radiation is about 0.8 to 1.0 μm.
In the wavelength range of m, the emissivity at a temperature of about 1100 ° K or less is almost constant.

Therefore, when the above-mentioned semi-transmission wavelength λ 1 and total transmission wavelength λ 2 are set in the wavelength range of 1.0 to 2.0 μm, the emissivity of the silicon substrate at both wavelengths becomes different, and the semi-transmission wavelength of such a wavelength becomes different. The temperature T0 and the film thickness d of the substrate W obtained based on the radiation intensity I and the non-reflection radiation intensity I0 are not reliable values, and the temperature control of the lamp 20 and the control of the lamp power based on such values are also accurate. It is no longer a thing.

Therefore, in the substrate heat treatment apparatus 2 of the second embodiment, the semi-transmission wavelength λ1 and the total transmission wavelength λ2 are set to the above-mentioned values within a wavelength range of about 0.8 to 1.0 μm where the emissivity is stable. It is doing.

It is desirable to set the semi-transmission wavelength λ 1 and the total transmission wavelength λ 2 as close as possible in terms of the emissivity of Si being equal. Both wavelengths are included in a wavelength range where the transmittance t is not stable (around 0.95 μm in FIG. 8), which is also undesirable for control. Therefore, in the substrate heat treatment apparatus 2 of the second embodiment, the semi-transmission wavelength λ1
And the total transmission wavelength λ2 is set to the value described above.

The reflectance r and the transmittance t of the semi-transmissive mirror 611
Is desirably about 0.5. This is because if the reflectance r is too large, much of the heat radiation will be reflected and the transflective radiation intensity I will be small. Conversely, if the transmissivity t is too large, the transflective radiation intensity I and the non-reflected radiation intensity I0 will be the same. This is because the accuracy of the obtained results is reduced due to the large size.

With the above configuration, the second
The substrate heat treatment apparatus 2 and the temperature / thickness measurement unit 60 of the second embodiment also have the same effects as those of the substrate heat treatment apparatus 1 of the first embodiment except for the effects of the rotation of the substrate W.

Further, in the substrate heat treatment apparatus 2 and the temperature / thickness measuring section 60 of the second embodiment, both the semi-transmission wavelength λ1 and the total transmission wavelength λ2 are substantially dependent on the temperature of the emissivity of the substrate W. Since the configuration is included in a wavelength range that is not included, the semi-transmitted radiation intensity I and the non-reflected radiation intensity I 0 at the same time at the same measurement target position on the substrate W can be measured, so that a more reliable temperature Measurement and film thickness measurement can be performed.

[0090]

[4. Other Embodiments FIG. 10 is a view showing the properties of a semi-transparent mirror 611 in a substrate heat treatment apparatus according to another embodiment. This apparatus has exactly the same configuration as the substrate heat treatment apparatus 2 of the second embodiment except for the properties of the semitransparent mirror 611. Then, as shown in FIG. 10, the semi-transmissive mirror 611 switches the semi-transmission wavelength λ1 and the total transmission wavelength λ2 of the substrate heat treatment apparatus 2 of the second embodiment, and the total transmission wavelength λ2 = 0.9 μm. The transmittance t of the semi-transmissive mirror 611 sharply increases in the wavelength range around 0.95 μm between the semi-transmission wavelength λ 1 = 1.0 μm, and the reflectance r sharply increases when the wavelength is around 0.95 μm. Has decreased.

In the higher wavelength range, the transmittance t
And the reflectance r is near “0.5”. That is, the semi-transmissive mirror 611 exhibits the properties of a semi-transparent mirror in a wavelength range of about 0.95 μm or more, but exhibits a transparent property in a wavelength range lower than that. In order to impart such properties to the semi-transparent mirror 611, the substrate heat treatment apparatus has a mirror surface formed by laminating, for example, a multilayer thin film of SiO2 and TiO2.

With such a configuration, this substrate heat treatment apparatus and its temperature / thickness measurement unit have the same effects as the substrate heat treatment apparatus 2 of the second embodiment.

Further, in the apparatus of each of the above embodiments, the substrate W is supported by the substrate support portion 40 with its device surface down, and the heating and film forming process is performed. On the other hand, as another embodiment, a configuration is adopted in which the substrate W is subjected to a heating and film forming process with its device surface facing upward. That is, the device configuration is substantially the same as that of the first embodiment and the second device.
In the same manner as in the apparatus of the first embodiment, the measurement of the film thickness d of the substrate W is not performed.

The temperature control is performed while maintaining the substrate W at a predetermined temperature by the temperature control based on the measurement results of the semi-transmissive radiation intensity I and the non-reflection radiation intensity I 0, as in the case of performing the substrate W in the apparatus of each of the above embodiments. The heating and film forming process is performed only for a predetermined time as in the conventional apparatus, and after the process, the operator takes out the substrate W and directly measures the film thickness d.
If the film thickness has not reached the predetermined value, the operation of heating and forming a film on another substrate again is repeated to finally form a film having a predetermined thickness.

With such a configuration, even in the substrate heat treatment apparatuses of these embodiments, highly accurate heating and film forming processing can be performed by the same temperature control as the apparatuses of the first and second embodiments. it can.

[0096]

[5. Modification In the substrate heat treatment apparatus 1 according to the first embodiment, the non-reflection radiation intensity I0 is obtained by making the thermal radiation transmitted by the transparent member 612 incident on the probe 620b. The present invention is not limited to this, and a configuration may be adopted in which the light is directly incident on the probe 620b and captured without providing the transparent member 612.

Further, in the substrate heat treatment apparatus 1 of the first embodiment, the positions of the probes 620a and 620b in the XY plane are located on the opposite sides of the center on one diameter of the transmission plate 610. However, the present invention is not limited to this, and the probe 620b may be located at a position adjacent to the semi-transparent mirror and equidistant from the center of the transmission plate 610.

In the substrate heat treatment apparatus 1 of the first embodiment, one probe 620a and one probe 620b are provided, and in the substrate heat treatment apparatus 2 of the second embodiment, one probe 620 is provided at the center of the transmission plate 610. However, the present invention is not limited to this. For example, in the apparatus of the first embodiment, a plurality of semi-transparent mirrors 611 and a plurality of probes 620a are provided below the transmission plate 610 in the transmission plate 610, and the transparent member 6
A plurality of probes 620b are provided below 12, and the thermal radiation incident on each of the probes 620a is collected and transmitted to the radiation pyrometer 630a, and the thermal radiation incident on each of the probes 620b is collected and transmitted to the radiation pyrometer 630b. It is also possible to adopt a configuration or the like in which heating and film formation are controlled based on the radiation intensity obtained in (1).

Further, when the substrate W is processed only at a temperature of about 850 to 1100 ° K in the apparatus of the second embodiment, the semi-transmission wavelength λ 1 and the total transmission wavelength λ 2 are 0.8 to 0.8.
It may be 15 μm.

[0100]

As described above, according to the first to fourth aspects of the present invention, the semi-transmissive radiation intensity, which is the intensity of the heat radiation from the object to be measured transmitted through the semi-transparent mirror, and the effect of any object The temperature of the object to be measured is obtained by the temperature calculating means based on the non-reflection radiation intensity which is the intensity of the heat radiation from the object to be measured which is not substantially reflected. Semi-transmissive radiation intensity, which is the intensity of the first-wavelength thermal radiation from the test object that is incompletely transmitted by the semi-transparent mirror, and heat of the second wavelength that is almost completely transmitted by the semi-transparent mirror from the test object. Since the temperature of the object to be measured is obtained by the temperature calculating means based on the non-reflected radiation intensity, which is the intensity of the radiation, the temperature of the object to be measured can be obtained in consideration of the reflectance and transmittance of the semi-transparent mirror. Perform accurate temperature measurement Door can be.

According to a second aspect of the present invention, in the first aspect of the present invention, the semi-transparent mirror has a disk shape centered on a position opposed to the first radiation intensity measuring means. Since the semi-transparent mirror has a disk shape centered on the position facing the radiation intensity measuring means, the heat radiation incident on the first radiation intensity measuring means and the radiation intensity measuring means is transmitted between the semi-transparent mirror and the substrate therearound. Since the effects of the multiple-reflected heat radiation are equally affected, more accurate temperature measurement can be performed in each case.

According to a third aspect of the present invention, in any one of the first and second aspects of the present invention, a portion of the surface of the semi-transparent mirror on the first radiation intensity measurement means side facing the first radiation intensity measurement means. 8. A portion other than the blackened portion is blackened.
In the invention according to any one of claims 5 and 6, since the portion of the surface of the semi-transparent mirror on the side of the radiation intensity measuring means other than the portion facing the radiation intensity measuring means is blackened, In any case, since multiple reflection does not occur inside the semi-transparent mirror, more accurate temperature measurement can be performed.

According to a fourth aspect of the present invention, in any one of the first to third aspects, the relative positions of the first radiation intensity measuring means and the second radiation intensity measuring means with respect to the measured object. Are replaced with each other, the first radiation intensity measuring means and the second radiation intensity measuring means can capture the heat radiation from the same part of the object to be measured, so that more accurate temperature measurement can be performed. .

According to the eighth aspect of the present invention, in any one of the fifth to seventh aspects, neither the first wavelength nor the second wavelength substantially depends on the temperature of the emissivity of the measured object. Since the configuration is included in the wavelength range, it is possible to measure the transflective radiation intensity and the non-reflective radiation intensity at the same time at the same measurement target position on the substrate, so that a more reliable temperature measurement can be performed. Can be.

Further, a ninth aspect of the present invention includes the temperature measuring device according to any one of the first to eighth aspects as a temperature measuring means, and the heating control means measures the temperature of the substrate obtained by the temperature measuring means. Since the substrate heat treatment apparatus performs the operation control of the heating means, the heating control can be performed based on the highly accurate temperature measurement by the temperature measurement means, so that good heat treatment of the substrate can be performed.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of multiple reflection of thermal radiation between a substrate and a semi-transparent mirror.

FIG. 2 is a graph showing radiation intensity with respect to temperature of a black body.

FIG. 3 is a cross-sectional view of the substrate heat treatment apparatus according to the first embodiment.

FIG. 4 is a plan view of the transmission plate according to the first embodiment.

FIG. 5 is a diagram showing a control flow of the substrate heat treatment apparatus of the first embodiment.

FIG. 6 is a cross-sectional view of a substrate heat treatment apparatus according to a second embodiment.

FIG. 7 is a plan view of a transmission plate according to a second embodiment.

FIG. 8 is a diagram illustrating properties of a semi-transparent mirror according to the second embodiment.

FIG. 9 is a diagram showing the temperature dependence of the emissivity of Si.

FIG. 10 is a diagram illustrating properties of a semi-transparent mirror according to another embodiment.

[Explanation of symbols]

 Reference Signs List 1, 2 substrate heat treatment apparatus 20 lamp 50 linear motor 60 temperature / thickness measurement unit 70 control unit 611 semi-transparent mirror 620, 620a, 620b probe 630a, 630b radiation pyrometer 640 operation unit I0 non-reflective radiation intensity I semi-transmissive radiation intensity T0 Substrate temperature W Substrate d Film thickness r Reflectance of semi-transmissive mirror t Transmittance of semi-transparent mirror λ1 Semi-transmission wavelength λ2 Total transmission wavelength

Claims (9)

[Claims] 1. A temperature measuring device for measuring the temperature of an object to be measured based on heat radiation from the object to be measured, wherein: a semi-transparent mirror that incompletely transmits the heat radiation; First radiation intensity measuring means for obtaining a semi-transmissive radiation intensity which is the intensity of radiation; and second radiation intensity measuring means for obtaining a non-reflection radiation intensity which is the intensity of the heat radiation substantially not reflected by any object. And a temperature calculating means for calculating a temperature of the object to be measured based on the transflective radiation intensity and the non-reflection radiation intensity. 2. The temperature measuring apparatus according to claim 1, wherein the semi-transparent mirror is formed in a disk shape centered on a position facing the first radiation intensity measuring means. 3. The temperature measuring device according to claim 1, wherein a surface of said semi-transparent mirror on a side of said first radiation intensity measuring means faces said first radiation intensity measuring means. A temperature measuring device characterized in that a portion other than the portion is blackened. 4. The temperature measuring device according to claim 1, wherein the first radiation intensity measuring means, the second radiation intensity measuring means, or the object to be measured is provided. A temperature measuring device, further comprising: rotating means for rotating the first radiation intensity measuring means and the second radiation intensity measuring means relative to the object to be measured by the rotating means. . 5. A temperature measuring device for measuring the temperature of a device under test based on the heat radiation from the device under test, wherein the heat radiation group includes the heat radiation of a first wavelength and a second wavelength. A semi-transmissive mirror that imperfectly transmits the heat radiation of one wavelength and transmits the heat radiation of the second wavelength almost completely; heat radiation of the first wavelength in the group of heat radiation that has transmitted through the semi-transparent mirror A radiation intensity measuring means for calculating a semi-transmissive radiation intensity which is an intensity of the non-reflective radiation intensity which is an intensity of the thermal radiation of the second wavelength; and And a temperature calculating means for determining the temperature of the temperature. 6. The temperature measuring apparatus according to claim 5, wherein said semi-transparent mirror is formed in a disk shape centered on a position facing said radiation intensity measuring means. 7. The temperature measuring device according to claim 5, wherein a portion of the surface of the semi-transparent mirror on the side of the radiation intensity measuring means other than a portion facing the radiation intensity measuring means. A temperature measuring device characterized in that a blackening process is performed. 8. The temperature measuring device according to claim 5, wherein each of the first wavelength and the second wavelength substantially depends on the temperature of the emissivity of the measured object. A temperature measuring device characterized in that the temperature measuring device is included in a wavelength range not to be used. 9. A substrate heat treatment apparatus comprising: the temperature measurement device according to claim 1 as temperature measurement means, wherein the object to be measured is a substrate and the substrate is heated by heating means. And a heating control unit for controlling the operation of the heating unit based on the temperature of the substrate obtained by the temperature measurement unit.