JP3366538B2 - Temperature measuring apparatus and substrate heat treatment apparatus using the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature measuring device for measuring the temperature of an object to be measured based on heat radiation from the object to be measured,
Also, the present invention relates to a substrate heat treatment apparatus for controlling heating of a substrate based on a temperature measurement result of a substrate such as a glass substrate for liquid crystal and a semiconductor wafer (hereinafter referred to as “substrate”).

[0002]

2. Description of the Related Art Conventionally, as a temperature measuring method in a heat treatment apparatus for semiconductor substrates, etc., Japanese Patent Laid-Open No. 6-341905
There is a non-contact type technology as disclosed in the publication. That is, in a heat treatment chamber in which a substrate to be heat-treated is supported horizontally, and an upper wall and a lower wall are provided close to the substrate and above and below the substrate, a conduit is provided in a cooling plate below the lower wall. The thermal radiation incident on the conduit is provided to the radiation pyrometer, and the temperature T of the substrate is measured based on the radiation intensity captured there.

Specifically, considering the multiple reflections occurring between the substrate and the lower reflector, by considering the reflectance of the lower wall to be r = 1, the radiation intensity I of the heat radiation incident on the conduit and the black The relation between the body radiation intensity L0 (T) is approximately I = L0 (T), and the black body radiation intensity L0 (T) is based on the formula obtained by using the Stefan-Boltzmann formula. Then, the incident radiation intensity I to the conduit is measured, and T is obtained from the incident radiation intensity I using the above equation.

[0004]

By the way, in the above technique, the substrate temperature T0 is determined on the assumption that the lower wall completely satisfies the reflectance r = 1. However, in the actual lower wall, the reflectance r < It is 1, and the material which becomes "1" completely is not known. Therefore, in the above method, the temperature T determined by the incident radiation intensity I and the actual true temperature of the substrate are different from each other, so that the temperature cannot be measured with high accuracy.

The present invention is intended to overcome the above-mentioned problems in the prior art, and an object of the present invention is to provide a temperature measuring apparatus and a substrate heat treatment apparatus using the temperature measuring apparatus which can perform highly accurate temperature measurement. .

[0006]

In order to achieve the above object, the apparatus according to claim 1 of the present invention is a temperature measuring apparatus for measuring the temperature of an object to be measured based on heat radiation from the object to be measured. there are, transmission and half mirror incompletely transmitted through the heat radiation, the a first radiation intensity measuring means for obtaining a semi-permeable radiation intensity which is the intensity of the heat radiation that has passed through the half Torukyo, the semi Torukyo
Second radiation intensity measuring means for obtaining the non-reflected radiation intensity which is the intensity of the thermal radiation in a non- operating state, and temperature calculation for obtaining the temperature of the object to be measured based on the semi-transmitted radiation intensity and the non-reflected radiation intensity. Means, and the first of the semi-transparent mirror
1. First radiation intensity measuring means on the surface on the side of the first radiation intensity measuring means
The part other than the part facing the
Characterize.

The apparatus according to claim 2 of the present invention is the temperature measuring apparatus according to claim 1, wherein the semi-transparent mirror has a disk shape centered on a position facing the first radiation intensity measuring means. Is characterized by.

[0008]

[0009] The device according to claim 3 of the present invention, wherein
The temperature measuring device according to claim 1 or 2 , wherein the first
Radiation intensity measuring means and rotation means for rotating either the second radiation intensity measuring means or the object to be measured are further provided, and the first radiation intensity measuring means and the second radiation intensity measuring means by the rotation means. The relative position of each of the above with respect to the measured object is replaced with each other.

An apparatus according to a fourth aspect of the present invention is a temperature measuring apparatus for measuring the temperature of an object to be measured on the basis of heat radiation from the object to be measured, which has the first wavelength and the second wavelength. Of the heat radiation group including heat radiation, the heat radiation of the first wavelength is incompletely transmitted, and the heat radiation of the second wavelength is transmitted at a transmittance higher than the transmittance for the first wavelength.
And a semi-transmissive radiation intensity which is the intensity of the thermal radiation of the first wavelength and a non-reflective radiation intensity which is the intensity of the thermal radiation of the second wavelength of the thermal radiation group transmitted through the semi-transparent mirror. Radiation intensity measurement means and temperature calculation means for obtaining the temperature of the object to be measured based on the semi-transmission radiation intensity and the non-reflection radiation intensity.

A fifth aspect of the present invention is the temperature measuring apparatus according to the fourth aspect, wherein the semi-transparent mirror has a disk shape centered on a position facing the radiation intensity measuring means. And

[0012] The apparatus of claim 6 of the present invention, wherein
The temperature measuring device according to claim 4 or 5 , wherein a portion of the surface of the semi-transparent mirror on the side of the radiation intensity measuring means other than the portion facing the radiation intensity measuring means is blackened. To do.

[0013]

Further, an apparatus according to claim 7 of the present invention comprises the temperature measuring device according to any one of claims 1 to 6 as a temperature measuring means, and the object to be measured is a substrate and a heating means. A substrate heat treatment apparatus for heating the substrate, comprising heating control means for controlling the operation of the heating means based on the temperature of the substrate obtained by the temperature measuring means.

[0015]

DETAILED DESCRIPTION OF THE INVENTION

[0016]

[1. Prior to the description of each embodiment, the principle of temperature measurement of the present invention will be described below.

First, assuming that the substrate does not transmit light, its emissivity ε and reflectance ρ (each of "0" to
The relationship of (taking a value of “1” ) is as follows.

[0018]

[Equation 1]

The non-reflective radiant intensity I0, which is the radiant intensity of the thermal radiation from the substrate that does not pass through the semi-transparent mirror, is expressed using the radiant intensity L0 (T) of the black body at the temperature T including the gain of the measurement system. , Becomes the following formula.

[0020]

[Equation 2]

However, in this equation (2), T0 represents the temperature of the substrate. In the present invention, the semi-transparent mirror does not necessarily mean a mirror having a reflectance of 50%, but a mirror having a reflectance between 0% and 100%. Therefore, incomplete transmission in the present invention means that the transmittance is between 0% and 100%.

When the substrate is brought close to the semi-transparent mirror, multiple reflection occurs between the substrate and the semi-transparent mirror. FIG. 1 is an illustration of multiple reflection of thermal radiation between a substrate and a semi-transparent mirror. In the following, the reflectance r and the transmittance t of the semi-transparent mirror (each of "0" to
The value will be “1”).

First, the thermal radiation of non-reflected radiation intensity I0 radiated from the lower surface of the substrate W is reflected upward by the semitransparent mirror HM with an intensity of rI0 and transmitted downward with an intensity of tI0. The reflected heat radiation is then reflected at the lower surface of the substrate W with an intensity of rρI0. The reflected heat radiation is again incident on the semi-transparent mirror HM and is transmitted with an intensity of trρI0.
In this way, when multiple reflections occur between the substrate W and the semi-transparent mirror HM, the intensity of thermal radiation after one round trip returning from the semi-transparent mirror HM to the semi-transparent mirror HM via the reflection by the substrate W is attenuated by rρ times. ing. Therefore, the semi-transmissive radiation intensity I, which is the intensity of the thermal radiation finally captured below the semi-transparent mirror HM.
Is the sum of the intensities of the thermal radiation transmitted through the semi-transparent mirror HM after one to an infinite number of multiple reflections. And this sum is the first term tI
It becomes a geometric series of 0 and the common ratio rρ, and is given by the following equation.

[0024]

[Equation 3]

The following three equations are obtained by solving the emissivity ε, the reflectance ρ of the substrate W and the radiation intensity L0 (T0) of the substrate W by solving the above three equations.

[0026]

[Equation 4]

[0027]

[Equation 5]

[0028]

[Equation 6]

In the following embodiments, the semi-transmission radiation intensity I,
The non-reflected radiation intensity I0 is measured, and the values thereof and the values of the reflectance r and the transmittance t of the semi-transparent mirror which are known in advance are used in the equations (4), (5), and (6) to calculate the emissivity ε, The reflectance ρ and the radiation intensity L0 (T0) of the substrate W are obtained. Further, the radiation intensity L0 (T of the substrate W obtained from the equation (6) is shown in the graph showing the radiation intensity L0 (T) with respect to the temperature T of the black body as shown in FIG.
0) is used to determine the temperature T0 of the substrate W.

Further, the relational expression between the emissivity ε of the silicon substrate W and the film thickness d of the thin film (see Shiro Fujiwara (ed.): Optical thin film, 12/18, Kyoritsu Shuppan (1986)) is given by the following formula. .

[0031]

[Equation 7]

In this equation, ρ1 is the reflectance at the boundary between the thin film and air, ρ2 is the reflectance at the boundary between the thin film and Si, θ is the angle between the measurement direction and the normal to the substrate W, λ is the measurement wavelength, and n is the measurement wavelength. The refractive index of the thin film and d represent the film thickness.

Using ρ1 and ρ2 obtained by the Fresnel's formula, θ, λ, n measured in advance, and the emissivity ε of the substrate W obtained by the equation (4) in the equation (7), The film thickness d of W is obtained.

In the embodiment described below, the temperature control is performed by the temperature T0 of the substrate W obtained as described above, and the heating / film forming process is ended depending on whether the film thickness d has reached a predetermined value. To control.

[0035]

[2. First Embodiment <2-1. Mechanical Structure and Operation> FIG. 3 is a cross-sectional view of the substrate heat treatment apparatus 1 of the first embodiment. In each of FIG. 4, FIG. 4 and FIG. 6, a three-dimensional coordinate system XYZ having a horizontal plane as an XY plane and a vertical direction as a Z-axis direction is defined. The configuration of this device will be described below with reference to FIG.

The substrate heat treatment apparatus 1 according to the first embodiment mainly comprises a furnace body 10, a lamp 20, a quartz glass 30, a substrate supporting section 40, a linear motor 50, a temperature / film thickness measuring section 60, a control section 70, and a lamp. A driver 80 and a motor driver 90 are provided.

The furnace body 10 is a box-shaped furnace body having an upper portion as a reflector 110 and a lower portion as a housing 120, and a large number of cooling pipes 130 (only some of the reference numerals are shown in FIG. 3) inside thereof. Is provided. Further, a gas supply port GI and a gas discharge port GO are provided on the side surface of the furnace body 10, and a gas supply pipe 140 and a gas discharge pipe 15 are provided in the housing 120.
0 is provided, and the processing gas is supplied at a predetermined timing during the heating / film formation processing.

A large number of lamps 20 are provided on the lower surface of the reflector 110 (only a part of the reference numeral is shown in FIG. 3), and the substrate W is heated by its heat radiation during lighting.

The quartz glass 30 is provided below the lamp 20 and transmits the heat radiation by the quartz glass 30.

The substrate support section 40 supports the substrate W and rotates the substrate W by rotating the substrate W around the Z-axis direction.

The linear motor 50 is a magnetic levitation type linear motor and rotates the substrate support portion 40 supporting the substrate W.

As will be described in detail later, the temperature / film thickness measuring unit 60 measures the heat radiation intensity from the substrate W, obtains the temperature T0, the film thickness d, etc. of the substrate W based on the measured intensity, and controls those signals. Part 70
Send to.

As will be described in detail later, the control unit 70 sends a control signal for the lamp 20 to a lamp driver 80, which will be described later, and sends a drive signal to a motor driver 90, which will be described later, at a predetermined timing.

The lamp driver 80 receives a control signal from the control unit 70 and supplies electric power to the lamp 20.

The motor driver 90 receives a drive signal from the control unit 70 and supplies electric power to the linear motor 50.

Next, the main part will be described in more detail.

The substrate supporting portion 40 comprises a supporting ring 410 for supporting the peripheral portion of the substrate W and supporting legs 420 for supporting the lower surface of the supporting ring 410 at several points, and the levitation portion 510 of the linear motor 50 is provided at the lower end of the supporting leg 420. Is provided on the substrate W
Is fitted to the upper surface of an annular rail 520 provided along the peripheral edge of the. Then, the levitation unit 510 levitates by the electric power from the motor driver 90 and slides along the rail, and the substrate supporting unit 40 is rotationally driven to rotate the substrate W.
This rotation makes the heating of the substrate W uniform in each part of the substrate W and, as will be described later, sets the measurement target position of the substrate W for measuring the semi-transmitted radiation intensity I and the non-reflected radiation intensity I0 from the substrate W to the probe 620a. And the probe 620b are commonly used.

The temperature / film thickness measuring unit 60 includes a transmission plate 610, probes 620a and 620b, and radiation pyrometers 630a and 63.
0b, an arithmetic unit 640.

FIG. 4 is a plan view of the transmission plate 610 according to the first embodiment. The transparent plate 610 is a disk-shaped member in which a transparent member 612 is provided around the semi-transparent mirror 611, and is fixed to the upper surface of the housing 120.

The semi-transparent mirror 611 is a probe 620a described later.
It has a disk shape centered on, and its upper surface is a mirror surface, and the heat radiation from above is imperfectly reflected and transmitted. Further, on the lower surface of the semi-transparent mirror 611, the portion facing the probe 620a is transparent, and the other portions are blackened, so that the heat radiation from above is completely absorbed and not reflected.

Further, the transparent member 612 has a property of almost completely transmitting the heat radiation from the upper substrate W, and it is incident on a probe 620b, which will be described later, provided below the transparent member 612, and the non-reflected radiation intensity I0 will be described later. Radiation pyrometer 630b
Can be measured accurately.

The probes 620a and 620b are optical fibers for transmitting the incident heat radiation, and send the heat radiation to the radiation pyrometers 630a and 630b at the upper end in the figure.

The radiation pyrometers 630a and 630b convert the incident high-temperature thermal radiation into electric signals representing the voltage, that is, the semi-transmissive radiation intensity I and the non-reflected radiation intensity I0, respectively, and send them to the computing unit 640.

The combination of the probe 620a and the radiation pyrometer 630a corresponds to the first radiation intensity measuring means, and the combination of the probe 620b and the radiation pyrometer 630b serves as the second radiation intensity measuring means. Equivalent to.

Further, the arithmetic unit 640 is a CPU (not shown).
And radiation thermometers 630a and 630b.
Of the signals indicating the semi-transmissive radiation intensity I and the non-reflected radiation intensity I0 sent from time to time from the probe 620a and 6 on the rotating substrate W as described above.
The values measured at the timings above each of the 20b are used as a set of radiant intensity signals. That is,
The timings for obtaining both radiation intensities are synchronized in order to measure the same position on the substrate W. By doing so, the measurement target positions for obtaining the semi-transmission radiation intensity I and the non-reflection radiation intensity I0 are made common. Therefore, more accurate temperature measurement and film thickness measurement can be performed.

Then, the substrate W is measured using the semi-transmitted radiation intensity I and the non-reflected radiation intensity I 0 thus obtained and the parameters used in the section of the principle of the invention stored in advance in the memory. The temperature T0, the emissivity ε, the reflectance ρ, and the film thickness d at the target position are obtained and sent to the control unit 70.

<2-2. Processing and Control> FIG. 5 is a diagram showing a control flow of the substrate heat treatment apparatus 1 of the first embodiment. The heating / film-forming process and control of the lamp 20 in this apparatus will be described below with reference to FIG.

First, the substrate W is carried in from the carry-in port (not shown) with the device surface facing down, and is supported by the substrate supporting portion 40. In order to measure the film thickness d by the temperature / film thickness measuring unit 60, the substrate W is supported with the device surface facing down. Therefore, the heat radiation from the thin film generated on the device surface is measured by the probes 620a and 620b. This is because it is necessary to make it incident on.

Next, the control unit 70 sends a control signal to a process gas supply means (not shown) to supply the process gas for heating / film forming process into the furnace body 10, and also sends a control signal to the lamp driver 80. The lamp 20 is turned on to start heating. At the same time, a drive signal is sent to the motor driver 90 to drive the linear motor 50 to rotate the substrate support portion 40, thereby rotating the substrate W. The rotation of the substrate W is continued during the following heating / film forming process.

Radiant heat emitted from the lamp 20 passes through the quartz glass 30 and reaches the substrate W, whereby the substrate W is heated and thermal radiation corresponding to the temperature is generated.

The heat radiation from the substrate W that has passed through the semitransparent mirror 611 of the transmission plate 610 enters the probe 620a and is guided to the radiation pyrometer 630a. Similarly, the heat radiation from the substrate W transmitted through the transparent member 612 of the transmission plate 610 is generated by the probe 6
It is incident on 20b and is guided to the radiation pyrometer 630b.

Then, from the radiation pyrometer 630a, the semi-transmission radiation intensity I of the thermal radiation transmitted through the semi-transparent mirror 611, and from the radiation pyrometer 630b, the non-reflection radiation intensity I0 of the thermal radiation transmitted through the transparent member 612, respectively. The radiant intensity signal represented is sent to the computing unit 640.

In the calculation unit 640, the semi-transmitted radiation intensity I, the non-reflected radiation intensity I0, and the calculation unit 640 obtained in advance.
Formula (4) described in the principle of the invention based on the transmittance t, the reflectance r, etc. of the semi-transparent mirror 611 stored in the internal memory,
Using the equations (5) and (6), the temperature T0 of the substrate W, the substrate W
The emissivity ε and the reflectance ρ of the above are obtained, and the above-mentioned ρ1, ρ2, θ, which are obtained in advance and stored in the memory,
λ, n, and ε obtained by the equation (4) are given by the equation (7)
Then, the film thickness d formed on the substrate W is obtained.

In the first embodiment, the conversion table corresponding to the graph showing the radiation intensity L0 (T) with respect to the temperature T of the black body as shown in FIG. 2 is stored in the memory in the arithmetic unit 640. Then, using this, the temperature T0 of the substrate W is obtained.

Then, the substrate W obtained by the arithmetic unit 640
Of temperature T0 is sent to the control unit 70 as a temperature signal, and based on this, the control unit 70 sends a control signal to the lamp driver 80 in order to keep the temperature of the substrate W at a predetermined value. The corresponding power is supplied to the lamp 20.

The film thickness signal obtained by the arithmetic unit 640 is sent to the control unit 70 in the same manner as the temperature signal, and the control unit 70 judges whether the obtained film thickness d has reached a predetermined thickness. , Lamp 2 depending on whether or not a predetermined film thickness has been reached
A control signal indicating zero power is sent to the lamp driver 80. While the control signal is ON, the lamp driver 80 performs the heating / film forming process on the substrate W while performing the temperature control for keeping the temperature T0 of the substrate W constant as described above.
When the control signal is turned off, the power supply to the lamp 20 is stopped and the heating / film forming process is ended.

As described above, the semi-transparent mirror 6 is used in the temperature / film thickness measuring unit 60 of the substrate heat treatment apparatus 1 of the first embodiment.
Semi-transmissive radiation intensity I, which is the intensity of thermal radiation transmitted through 11,
Also, since the calculation unit 640 calculates the temperature T0 of the substrate W based on the non-reflected radiation intensity I0 which is the intensity of the thermal radiation transmitted through the transparent member 612, the reflectance r and the transmittance t of the semi-transparent mirror 611 are calculated. Since the temperature T0 and the film thickness d of the substrate W can be obtained in consideration of the above, it is possible to measure the substrate temperature and the film thickness with high accuracy.

Further, since the semi-transparent mirror 611 has a disk shape centering on the probe 620a, the thermal radiation incident on the probe 620a is multi-reflected between the surrounding semi-transparent mirror 611 and the substrate W. Since the influence is evenly exerted, more accurate temperature measurement and film thickness measurement can be performed.

Since the lower surface of the semi-transparent mirror 611 is blackened, the heat radiation transmitted through the mirror surface of the upper surface of the semi-transparent mirror 611 is reflected on the lower surface and is multiple-reflected in the semi-transparent mirror, and then enters the probe 620a. Since only the heat radiation that is not reflected on the lower surface is incident on the probe 620a, the semi-transmission radiation intensity I can be accurately measured by the radiation pyrometer 630a, and therefore, the temperature / film thickness measuring unit 60 can It is possible to perform more accurate temperature measurement and film thickness measurement.

Further, by rotating the substrate W and synchronizing the timing of capturing the semi-transmitted radiation intensity I and the non-reflected radiation intensity I0 in order to measure the same position on the substrate W, the same portion of the substrate W can be obtained. Since the thermal radiation can be captured, more accurate temperature measurement and film thickness measurement can be performed.

In addition, in the substrate heat treatment apparatus 1 of the first embodiment, the lamp 20 of the lamp 20 is measured based on the highly accurate measurement results of the temperature T0 and the film thickness d of the substrate W by the temperature / film thickness measuring unit 60 as described above. Since the temperature control and the lamp power control are performed, the substrate W can be heated and film-formed with high accuracy.

Further, unlike the conventional apparatus, since the film thickness is not controlled by processing the substrate W at a predetermined temperature for a predetermined time, the operator takes the substrate W out of the furnace body 10, measures the film thickness, and returns it again. The heating / film forming process is continued, and the temperature T0 of the substrate W does not have to be constant during the heating / film forming process, so it is necessary to perform a warm-up operation in which a dummy substrate or the like is used to heat to a predetermined temperature in advance. Therefore, the heating / film forming process can be performed with good processing efficiency.

[0073]

[3. Second Embodiment FIG. 6 is a sectional view of a substrate heat treatment apparatus 2 according to a second embodiment. Further, FIG. 7 is a plan view of the transmission plate according to the second embodiment. The substrate heat treatment apparatus 2 of the second embodiment will be described below with reference to FIGS. 6 and 7 focusing on the differences from the substrate heat treatment apparatus 1 of the first embodiment.

The transparent plate 610 in the substrate heat treatment apparatus 2 is provided with a disk-shaped semi-transparent mirror 611 at the center thereof. The upper surface thereof is a mirror surface having the property described in detail later, and conversely, the lower surface of the portion facing the probe 620 is transparent, and the other portions are blackened.

FIG. 8 is a diagram showing the nature of the semi-transparent mirror 611 of the second embodiment. The semi-transparent mirror 611 has a transparent property when it exhibits the properties of the semi-transparent mirror. That is, as shown in the figure, this semi-transparent mirror 611 has a semi-transmission wavelength λ1 = 0.9.
0.95 between μm and total transmission wavelength λ 2 = 1.0 μm
The transmittance t sharply increases in the wavelength region near μm, and conversely, the reflectance r sharply decreases near the wavelength 0.95 μm. Then, both the transmittance t and the reflectance r are about “0.5” in the wavelength range of about 0.95 μm or less. In the wavelength range above 0.95 μm, the transmittance t
Is almost “1”, and conversely, the reflectance r is almost “0”. Therefore, this semi-transparent mirror 611 is about 0.95 μm
It exhibits the properties of a semi-transparent mirror in the following wavelength regions, but it is transparent in the wavelength regions above it. Semi-transparent mirror 611
In order to have such a property, in the second embodiment, the mirror surface is made to have a thickness corresponding to the wavelength at which a thin film of SiO2 and TiO2 is transmitted, and they are laminated on each other.

Further, only one probe 620 is provided immediately below the center of the housing 20 so that one end thereof faces the semi-transparent mirror 611 in the housing 20, and the two-color high temperature is provided at the end portion not facing the semi-transparent mirror 611. It is connected to a total of 635.

Further, when the two-color pyrometer 635 receives a heat radiation group including heat radiation of two wavelengths of the above-mentioned semi-transmission wavelength λ1 and full-transmission wavelength λ2, it inputs the half-transmission wavelength λ1 from the heat radiation group. The pyrometer is capable of extracting the thermal radiation and the thermal radiation having the total transmission wavelength λ2 and measuring the radiation intensity of the thermal radiation of each wavelength. A combination of the probe 620 and the two-color pyrometer 635 corresponds to the radiation intensity measuring means.

The configuration and operation other than the above are the first.
The device is the same as that of the embodiment.

With the above-mentioned configuration, this device performs the following control.

The thermal radiation emitted downward from the substrate W supported by the substrate supporting section 40 with the device surface facing downward is incident on the upper end of the probe 620 as a thermal radiation group in which various wavelengths are mixed.

Then, of the thermal radiation sent to the two-color pyrometer 635 by the probe 620, the above-mentioned semi-transmission wavelength λ1 and total transmission wavelength λ2 are extracted, and the radiation intensity of the thermal radiation of the semi-transmission wavelength λ1 is semi-transmission. The radiant intensity I and the radiant intensity at the total transmission wavelength λ2 are respectively obtained as the non-reflected radiant intensity I0, and are sent to the computing unit 640 as a radiant intensity signal. Then, based on these signals, the temperature T0 and the film thickness d of the substrate W are obtained similarly to the first embodiment, and the temperature control of the lamp 20 and the lamp power are performed based on them.

However, the semi-transmission wavelength λ1 and the total transmission wavelength λ2 need to satisfy the following conditions. Figure
9 is a diagram showing the temperature dependence of the emissivity of thermal radiation of Si. As shown in the figure, when the temperature of Si is about 800 ° K or less, the emissivity of the Si is sharply reduced in the wavelength range of 1.0 to 2.0 μm, and further about 15 μm.
The emissivity gradually increases over the wavelength range of m.

On the contrary, the wavelength of heat radiation is about 0.8 to 1.0 μm.
In the wavelength range of m, the emissivity at temperatures below about 1100 ° K is almost constant.

Therefore, if the above-mentioned semi-transmission wavelength λ1 and total transmission wavelength λ2 are set in the wavelength range of 1.0 to 2.0 μm, the emissivity of the silicon substrate at both wavelengths will be different, and the semi-transmission of such wavelengths will be different. The temperature T0 and the film thickness d of the substrate W obtained based on the radiation intensity I and the non-reflected radiation intensity I0 are not reliable values, and the temperature control of the lamp 20 and the lamp power control based on such values are accurate. It's not something.

Therefore, in the substrate heat treatment apparatus 2 of the second embodiment, the semi-transmission wavelength λ1 and the total transmission wavelength λ2 are set to the above-mentioned values within the wavelength range of about 0.8 to 1.0 μm where the emissivity is stable. I am doing it.

Although it is desirable to set the semi-transmission wavelength λ1 and the total transmission wavelength λ2 as close to each other as possible in terms of equalizing the emissivity of Si, if they are too close, the reflectance r of the semi-transparent mirror 611 and Both wavelengths are included in the wavelength range in which the transmittance t is not stable (near 0.95 μm in FIG. 8), which is also undesirable in control. Therefore, in the substrate heat treatment apparatus 2 of the second embodiment, the semi-transmission wavelength λ1
And the total transmission wavelength λ2 is set to the value as described above.

Further, the reflectance r and the transmittance t of the semi-transparent mirror 611.
It is desirable that each of them has a value of "0.5". This is because if the reflectance r is too large, most of the thermal radiation is reflected and the semi-transmission radiant intensity I becomes small. On the contrary, if the transmittance t is too large, the semi-transmission radiant intensity I and the non-reflecting radiant intensity I0 are the same. This is because the accuracy of the obtained results is reduced because of the size.

With the above-mentioned structure, the second
The substrate heat treatment apparatus 2 and the temperature / film thickness measuring unit 60 thereof according to the second embodiment also have the same effects as those of the substrate heat treatment apparatus 1 according to the first embodiment except for the effect of the rotation of the substrate W.

Further, in the substrate heat treatment apparatus 2 and the temperature / film thickness measuring unit 60 of the second embodiment, both the semi-transmission wavelength λ1 and the total transmission wavelength λ2 depend on the temperature of the emissivity of the substrate W. Since it is included in the wavelength range not included, it is possible to measure the semi-transmitted radiation intensity I and the non-reflected radiation intensity I0 at the same time point at the same measurement target position on the substrate W, so that a more reliable temperature can be obtained. Measurement and film thickness measurement can be performed.

[0090]

[4. Other Embodiments FIG. 10 is a diagram showing the nature of a semi-transparent mirror 611 in a substrate heat treatment apparatus of another embodiment. This apparatus has exactly the same configuration as the substrate heat treatment apparatus 2 of the second embodiment except for the properties of the semitransparent mirror 611. As shown in FIG. 10, the semi-transparent mirror 611 has the semi-transmission wavelength λ1 and the total transmission wavelength λ2 of the substrate heat treatment apparatus 2 of the second embodiment interchanged, and the total transmission wavelength λ2 = 0.9 μm. The transmittance t of the semi-transparent mirror 611 sharply increases in the wavelength region near 0.95 μm between the semi-transmission wavelength λ1 = 1.0 μm, and conversely, the reflectance r sharply increases near the wavelength 0.95 μm. Has decreased.

In the wavelength region higher than that, the transmittance t
And the reflectance r is around "0.5". That is, the semi-transparent mirror 611 exhibits semi-transparent properties in a wavelength range of about 0.95 μm or more, but is transparent in a wavelength range lower than that. In order to provide the semi-transparent mirror 611 with such a property, the mirror surface of this substrate heat treatment apparatus is formed by laminating a multilayer thin film of, for example, SiO2 and TiO2.

With this structure, this substrate heat treatment apparatus and its temperature / film thickness measuring section also have the same effects as the substrate heat treatment apparatus 2 of the second embodiment.

Further, in the apparatus of each of the above-mentioned embodiments, the substrate W is supported by the substrate supporting portion 40 with its device surface facing down, and the heating / film forming process is performed. On the other hand, as another embodiment, the substrate W is subjected to heating / film formation processing with its device surface facing upward. That is, the device configuration is almost the same as that of the first embodiment and the second embodiment.
Similar to the device of the embodiment, the film thickness d of the substrate W is not measured.

The temperature control is performed while keeping the substrate W at a predetermined temperature by the temperature control based on the measurement results of the semi-transmission radiation intensity I and the non-reflected radiation intensity I0, as in the case of performing the substrate W in the apparatus of each of the above-mentioned embodiments. As in the conventional apparatus, the heating / film forming process is performed for a predetermined time, and after the process, the operator takes out the substrate W and directly measures the film thickness d,
If the predetermined film thickness has not been reached, the work of heating and film-forming processing on another substrate is repeated again to finally form a film having a predetermined film thickness.

With such a structure, the substrate heat treatment apparatuses of these embodiments can perform highly accurate heating and film formation processing by the same temperature control as the apparatuses of the first and second embodiments. it can.

[0096]

[5. Modified Example In the substrate heat treatment apparatus 1 of the first embodiment described above, the non-reflected radiation intensity I0 is obtained by making the thermal radiation transmitted by the transparent member 612 incident on the probe 620b. The configuration is not limited, and the transparent member 612 may not be provided and may be directly incident on the probe 620b to be captured.

Further, in the substrate heat treatment apparatus 1 of the first embodiment, the positions of the probe 620a and the probe 620b in the XY plane are located on the opposite sides of the diametric center of the transmission plate 610. However, the present invention is not limited to this, and the probe 620b may be located adjacent to the semi-transparent mirror and equidistant from the center of the transmission plate 610.

The substrate heat treatment apparatus 1 of the first embodiment has one probe 620a and one probe 620b, and the substrate heat treatment apparatus 2 of the second embodiment has one probe 620 at the center of the transmission plate 610. However, the present invention is not limited to this. For example, in the device of the first embodiment, a plurality of semitransparent mirrors 611 and a plurality of probes 620a below the semitransparent mirrors 611 are provided on the transmission plate 610, and the transparent member 6 is provided.
A plurality of probes 620b are provided below 12, to collect the thermal radiation incident on each of the probes 620a to a radiation pyrometer 630a, and collect the thermal radiation incident to each of the probes 620b to send to a radiation pyrometer 630b. It is also possible to adopt a configuration in which heating / film formation control is performed based on the radiant intensity obtained in.

Further, in the apparatus of the second embodiment, when the substrate W is processed only at the temperature of about 850 to 1100 ° K, the semi-transmission wavelength λ1 and the total transmission wavelength λ2 are 0.8 to.
It may be 15 μm.

[0100]

As described above, according to the inventions of claims 1 to 3 , the semi-transmissive radiation intensity, which is the intensity of the heat radiation from the object to be measured that has passed through the semi-transparent mirror , and the semi-transparent mirror.
And a configuration to determine the temperature of the object to be measured by the temperature calculating means on the basis of the non-reflected radiation intensity is an intensity of thermal radiation from the object to be measured in the state not, the invention of claims 4 to 6, the semi With the semi-transmissive radiation intensity, which is the intensity of the thermal radiation of the first wavelength from the DUT that is incompletely transmitted by the transparent mirror, and with the transmissivity higher than the transmittance for the first wavelength by the semi-transparent mirror .
Since the temperature calculation means obtains the temperature of the measured object based on the non-reflected radiation intensity, which is the intensity of the thermal radiation of the second wavelength transmitted from the measured object, the reflectance and the transmittance of the semi-transparent mirror can be calculated. Since the temperature of the object to be measured can be calculated in consideration, it is possible to perform highly accurate temperature measurement.

In the invention of claim 2, the semi-transparent mirror in the invention of claim 1 has a disk shape centered on a position facing the first radiation intensity measuring means, and in the invention of claim 5 ,
In the invention of claim 4 , since the semi-transparent mirror has a disk shape centered on a position facing the radiant intensity measuring means, the thermal radiation incident on the first radiant intensity measuring means and the radiant intensity measuring means is surrounded by the semi-transparent mirror and the substrate. Since they are evenly affected by the heat radiation that is reflected multiple times between them, it is possible to perform more accurate temperature measurement.

[0102] Further, in the invention of claim 1 first a portion other than the portion facing the radiation intensity measuring means of the surface of the first radiation intensity measuring means side of the semi Torukyo are blackened, according to claim 6 According to the invention, in the invention of claim 4 or claim 5 , since a portion of the surface of the semi-transparent mirror on the side of the radiant intensity measuring means other than the portion facing the radiant intensity measuring means is blackened, both are inside the semi-transparent mirror. Since multiple reflection does not occur, more accurate temperature measurement can be performed.

In the invention of claim 3 , the invention according to claim 1 or
In the invention of claim 2 , since the relative positions of the first radiant intensity measuring means and the second radiant intensity measuring means with respect to the object to be measured are replaced with each other, the first radiant intensity measuring means and the second radiant intensity measuring means. Since the means and the means can capture the heat radiation from the same portion of the object to be measured, it is possible to perform more accurate temperature measurement.

[0104]

Furthermore, the invention of claim 7 is provided with the temperature measuring device according to any one of claims 1 to 6 as temperature measuring means, and the heating control means measures the temperature of the substrate obtained by the temperature measuring means. Since the substrate heat treatment apparatus controls the operation of the heating unit, the heating control can be performed based on the highly accurate temperature measurement by the temperature measuring unit, so that the excellent heat treatment of the substrate can be performed.

[Brief description of drawings]

FIG. 1 is an explanatory view of multiple reflection of thermal radiation between this substrate and a semi-transparent mirror.

FIG. 2 is a graph showing radiation intensity with respect to temperature of a black body.

FIG. 3 is a cross-sectional view of the substrate heat treatment apparatus of the first embodiment.

FIG. 4 is a plan view of the transmission plate according to the first embodiment.

FIG. 5 is a diagram showing a control flow of the substrate heat treatment apparatus of the first embodiment.

FIG. 6 is a cross-sectional view of the substrate heat treatment apparatus of the second embodiment.

FIG. 7 is a plan view of a transmission plate according to a second embodiment.

FIG. 8 is a diagram showing properties of the semi-transparent mirror according to the second embodiment.

FIG. 9 is a diagram showing the temperature dependence of the emissivity of Si.

FIG. 10 is a diagram showing properties of a semi-transparent mirror according to another embodiment.

[Explanation of symbols]

1, 2 substrate heat treatment equipment 20 lamps 50 linear motor 60 Temperature / film thickness measurement unit 70 Control unit 611 Semi-transparent mirror 620, 620a, 620b probes 630a, 630b Radiation pyrometer 640 operation unit I0 Non-reflected radiation intensity I Semi-transmitted radiation intensity T0 substrate temperature W board d film thickness r Semi-transparent mirror reflectance transmissivity of semi-transparent mirror λ1 half transmission wavelength λ2 Total transmission wavelength

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) G01J 5/00-5/62 H01L 21/66

Claims (7)

(57) [Claims] 1. A temperature measuring device for measuring the temperature of an object to be measured based on heat radiation from the object to be measured, comprising: a semi-transparent mirror that transmits the thermal radiation incompletely; First radiation intensity measuring means for obtaining a semi-transmission radiation intensity which is the intensity of radiation, and second radiation intensity measuring means for obtaining a non-reflected radiation intensity which is the intensity of the thermal radiation not transmitted through the semi-transparent mirror, Temperature calculating means for determining the temperature of the object to be measured based on the semi-transmissive radiant intensity and the non-reflected radiant intensity .
1 The part other than the part facing the radiation intensity measuring means is blackened
A temperature measuring device characterized by being processed. 2. The temperature measuring device according to claim 1, wherein the semi-transparent mirror has a disk shape centered on a position facing the first radiation intensity measuring means. 3. The temperature measuring device according to claim 1 or 2.
And said first radiation intensity measuring means and said second radiation intensity measurement
Rotating either the means or the object to be measured
Rotation means is further provided, and the first release is performed by the rotation means.
Radiation intensity measuring means and that of the second radiation intensity measuring means
The relative positions of each of them are interchanged.
A temperature measuring device characterized in that 4. The measurement target based on heat radiation from the measurement target
A temperature-measuring device for measuring a temperature of a body, comprising: a thermal radiation group including the thermal radiation having a first wavelength and a second wavelength;
Of which, the heat radiation of the first wavelength is not completely transmitted.
And transmits the second wavelength of thermal radiation to the first wavelength.
A semi- transmissive mirror that transmits with a transmissivity higher than the transmissivity, and the first wavelength of the heat radiation group that has transmitted through the semi- transparent mirror.
Radiation intensity, which is the intensity of the thermal radiation of, and the second wave
Radiant intensity to obtain non-reflected radiant intensity, which is the intensity of long thermal radiation
Measuring means, and based on the semi-transmitted radiation intensity and the non-reflected radiation intensity
A temperature measuring device , comprising: temperature calculating means for obtaining the temperature of the object to be measured . 5. The temperature measuring device according to claim 4, wherein the semi-transparent mirror is located at a position facing the radiation intensity measuring means.
A temperature measuring device characterized by having a disc shape with a core. 6. A temperature measuring device according to claim 4 or claim 5.
A is, wherein the radiation strength of the surface of the radiation intensity measuring means side of the semi Torukyo
The portion other than the portion facing the degree measuring means has been blackened
A temperature measuring device characterized in that 7. Any one of claims 1 to 6.
Equipped with a temperature measuring device as a temperature measuring means,
Using a fixed body as a substrate, the substrate is heated by heating means.
A substrate heat treatment apparatus for heating, wherein the temperature of the substrate obtained by the temperature measuring means is
Based on the above, a heating control means for controlling the operation of the heating means is provided.
A substrate heat treatment apparatus characterized by the above.