JPH1015822A - Abrasive circulating method for abrasive supplying device - Google Patents
Abrasive circulating method for abrasive supplying deviceInfo
- Publication number
- JPH1015822A JPH1015822A JP19007796A JP19007796A JPH1015822A JP H1015822 A JPH1015822 A JP H1015822A JP 19007796 A JP19007796 A JP 19007796A JP 19007796 A JP19007796 A JP 19007796A JP H1015822 A JPH1015822 A JP H1015822A
- Authority
- JP
- Japan
- Prior art keywords
- abrasive
- polishing
- tank
- substrate
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ等の
基板を高精度に研磨するための化学機械研磨装置に付設
される研磨剤供給装置における研磨剤循環方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for circulating an abrasive in an abrasive supply apparatus provided in a chemical mechanical polishing apparatus for polishing a substrate such as a semiconductor wafer with high precision.
【０００２】[0002]
【従来の技術】近年、半導体ディバイスの超微細化や高
段差化が進み、これに伴なってＳｉ、ＧａＡｓ、ＩｎＰ
等からなる半導体ウエハ等の基板の表面を高精度に平坦
化することが求められているが、このウエハ等の基板の
表面を高精度に平坦化するための加工手段として、次に
説明する化学機械研磨装置が知られている。2. Description of the Related Art In recent years, semiconductor devices have become ultra-miniaturized and highly stepped, and accordingly Si, GaAs, InP
It is required to flatten the surface of a substrate such as a semiconductor wafer formed with high precision. However, as a processing means for flattening the surface of the substrate such as wafer with high accuracy, a chemical method described below is used. A mechanical polishing device is known.
【０００３】この従来の化学機械研磨装置は、図４に示
すように、Ｓｉ、ＧａＡｓ、ＩｎＰ等からなる半導体ウ
エハ等の基板１０４を図示下面に着脱自在に保持するこ
とができる被加工物回転テーブル１０３と、被加工物回
転テーブル１０３の図示下方に対向して配設された基板
１０４の口径に比較して口径の非常に大きな研磨パッド
１０２が一体的に設けられた研磨工具回転テーブル１０
１と、研磨パッド１０２の上面に研磨剤（研磨スラリ
ー）１０７を供給するための研磨剤（研磨スラリー）の
供給ノズル１０６を備え、矢印Ａ方向へ回転される研磨
工具回転テーブル１０１に一体的に設けられた研磨パッ
ド１０２の上面に研磨剤（研磨スラリー）１０７を供給
しつつ、基板１０４を保持した被加工物回転テーブル１
０３の回転軸１０５に白抜き矢印で示す軸方向への加工
圧を与えて基板１０４を研磨パッド１０２に押付けた状
態で、基板１０４を保持した被加工物回転テーブル１０
３に矢印Ｂで示す回転運動と矢印Ｃで示す揺動運動を与
えて研磨するように構成されている。As shown in FIG. 4, this conventional chemical-mechanical polishing apparatus has a workpiece rotating table capable of detachably holding a substrate 104 such as a semiconductor wafer made of Si, GaAs, InP or the like on a lower surface in the figure. A polishing tool rotation table 10 integrally provided with a polishing pad 103 having a diameter very large as compared with a diameter of a substrate 104 disposed opposite to the workpiece rotation table 103 in the drawing below.
1 and an abrasive (polishing slurry) supply nozzle 106 for supplying an abrasive (polishing slurry) 107 to the upper surface of the polishing pad 102, and integrally with a polishing tool rotating table 101 rotated in the direction of arrow A. A workpiece rotating table 1 holding a substrate 104 while supplying an abrasive (polishing slurry) 107 to an upper surface of a provided polishing pad 102.
The workpiece rotating table 10 holding the substrate 104 in a state where a processing pressure in the axial direction indicated by a white arrow is applied to the rotating shaft 105 of 03 and the substrate 104 is pressed against the polishing pad 102.
Polishing is performed by giving a rotating motion indicated by an arrow B and a swinging motion indicated by an arrow C to 3.
【０００４】この従来の化学機械研磨装置において、供
給ノズル１０６は図示しないポンプが介在された供給路
を介して研磨剤（研磨スラリー）１０７を収容した供給
タンクに接続されており、研磨時に前記ポンプを起動し
て供給ノズル１０６より研磨剤（研磨スラリー）を研磨
工具１０２の研磨面上に供給し、非研磨時には前記ポン
プを停止することによって研磨剤（研磨スラリー）１０
７の供給を停止させる。In this conventional chemical mechanical polishing apparatus, a supply nozzle 106 is connected to a supply tank containing an abrasive (polishing slurry) 107 via a supply path provided with a pump (not shown). Is activated to supply the abrasive (polishing slurry) from the supply nozzle 106 onto the polishing surface of the polishing tool 102. When the polishing is not performed, the pump is stopped.
7 is stopped.
【０００５】[0005]
【発明が解決しようとする課題】しかし、上記従来の技
術では、非研磨時にはポンプを停止することによって研
磨剤（研磨スラリー）の供給を停止させるため、非研磨
時においては研磨剤（研磨スラリー）は循環されず、砥
粒等の微粒子が沈殿したり凝集してしまい、研磨レート
が設定値からずれて、高精度な研磨ができなくなるとい
う問題点があった。However, in the above conventional technique, the supply of the polishing agent (polishing slurry) is stopped by stopping the pump during non-polishing, so that the polishing agent (polishing slurry) is not used during polishing. Is not circulated, and fine particles such as abrasive grains precipitate or aggregate, and the polishing rate deviates from a set value, so that high-precision polishing cannot be performed.
【０００６】本発明は上記従来の技術の有する問題点に
鑑みてなされたものであって、非研磨時における研磨剤
（研磨スラリー）の沈殿や凝集の発生を防止することが
できる、研磨剤供給装置における研磨剤循環方法を実現
することを目的とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and is intended to prevent the precipitation and aggregation of a polishing agent (polishing slurry) during non-polishing, and to provide an abrasive supply. An object of the present invention is to realize a method of circulating an abrasive in an apparatus.
【０００７】[0007]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の研磨剤供給装置における研磨剤循環方法
は、化学機械研磨装置に用いられる研磨剤供給装置にお
いて、前記研磨剤供給装置の供給路に介在された弁の上
流側から分岐する循環路を設け、非研磨時に前記循環路
を通して研磨剤をタンクへ返戻することによって研磨剤
を循環させることを特徴とするものである。In order to achieve the above object, a method of circulating an abrasive in an abrasive supply apparatus according to the present invention is directed to an abrasive supply apparatus used in a chemical mechanical polishing apparatus. A circulation path branching from the upstream side of the valve interposed in the supply path, and returning the abrasive through the circulation path to the tank during non-polishing to circulate the abrasive.
【０００８】また、非研磨時に供給路のノズルから放出
される研磨剤を受けるための研磨剤受けと、前記研磨剤
受けから研磨剤をタンクへ返戻するための返戻路を設
け、前記返戻路を介してノズルから放出された研磨剤を
タンクへ返戻する。In addition, an abrasive receiver for receiving the abrasive discharged from the nozzle of the supply path during non-polishing, and a return path for returning the abrasive from the abrasive receiver to the tank are provided. The abrasive discharged from the nozzle through the nozzle is returned to the tank.
【０００９】さらに、タンク内に収容された研磨剤を攪
拌したり、研磨剤の温度を所定の温度に温度制御する。Further, the abrasive contained in the tank is stirred or the temperature of the abrasive is controlled to a predetermined temperature.
【００１０】[0010]
【作用】非研磨時において、研磨剤（研磨スラリー）を
供給路に介在された弁の上流側から分岐する循環路を通
してタンクへ返戻することによって循環させるため、絶
えず研磨剤（研磨スラリー）が流動しており、砥粒等の
微粒子の沈殿や凝集が発生することがない。In the non-polishing operation, the abrasive (polishing slurry) is circulated by returning the abrasive (polishing slurry) to the tank through a circulation path branched from the upstream side of the valve interposed in the supply path to the tank. Therefore, precipitation and aggregation of fine particles such as abrasive grains do not occur.
【００１１】[0011]
【発明の実施の形態】本発明の実施の形態を図面に基づ
いて説明する。Embodiments of the present invention will be described with reference to the drawings.
【００１２】図１は研磨剤供給装置における研磨剤循環
方法の第１実施例の説明図であって、研磨剤供給装置Ｆ
1 は、タンク１内の研磨剤（研磨スラリー）９をポンプ
４で吸い上げて弁３を介在させた供給路２を通してその
先端側に接続されたノズル１０より放出できるととも
に、供給路２の弁３の上流側から分岐された循環路５を
通してタンク１内へ返戻することによって研磨剤（研磨
スラリー）９を循環させるように構成されている。FIG. 1 is an explanatory view of a first embodiment of a method of circulating an abrasive in an abrasive supply apparatus, and is an illustration of an abrasive supply apparatus F.
1 is that the abrasive (polishing slurry) 9 in the tank 1 can be sucked up by the pump 4 and discharged from the nozzle 10 connected to the tip side through the supply path 2 with the valve 3 interposed therebetween. The polishing agent (polishing slurry) 9 is circulated by returning to the inside of the tank 1 through a circulation path 5 branched from the upstream side of the polishing agent.
【００１３】また、タンク１には加熱手段であるヒータ
７が設けられているとともに、攪拌機６が配設されてお
り、攪拌機６により攪拌したり、ヒータ温度制御部８よ
り印加される電流値を変化させてヒータ７の発熱温度を
所定の温度とすることにより、研磨剤（研磨スラリー）
を所定の温度に温度制御できるように工夫されている。Further, the tank 1 is provided with a heater 7 as a heating means, and a stirrer 6 is provided. By changing the heating temperature of the heater 7 to a predetermined temperature, the polishing agent (polishing slurry)
Is devised so that the temperature can be controlled to a predetermined temperature.
【００１４】本実施例において、研磨時においては、弁
３を所定の開度に開き、ポンプ４によってタンク１から
吸い上げた研磨剤（研磨スラリー）９のうちの所定量を
供給路２の先端側に接続されたノズル１０より図示しな
い被加工物である基板の被研磨面上に供給するととも
に、残りの研磨剤（研磨スラリー）９を供給路２に介在
された弁３の上流側から分岐する循環路５を通してタン
ク１内へ返戻することによって循環させる。In this embodiment, at the time of polishing, the valve 3 is opened to a predetermined opening, and a predetermined amount of the polishing slurry (polishing slurry) 9 sucked from the tank 1 by the pump 4 is supplied to the front end of the supply passage 2. Is supplied from a nozzle 10 connected to the substrate to a surface to be polished of a substrate (not shown), and the remaining abrasive (polishing slurry) 9 is branched from the upstream side of the valve 3 interposed in the supply path 2. It is circulated by returning it to the tank 1 through the circulation path 5.
【００１５】また、非研磨時には、弁３を閉鎖すること
により、研磨剤（研磨スラリー）９の供給を停止し、ポ
ンプ４によって吸い上げた研磨剤（研磨スラリー）９の
全量を供給路２に介在された弁３の上流側から分岐する
循環路５を通してタンク１内へ返戻することによって循
環させる。When the polishing is not performed, the supply of the polishing slurry (polishing slurry) 9 is stopped by closing the valve 3, and the whole amount of the polishing slurry (polishing slurry) 9 sucked up by the pump 4 is interposed in the supply passage 2. It is circulated by returning it to the tank 1 through a circulation path 5 branched from the upstream side of the valve 3 that has been set.
【００１６】次に、本発明の研磨剤供給装置における研
磨剤循環方法の第２実施例について説明する。Next, a description will be given of a second embodiment of the abrasive circulating method in the abrasive supply apparatus according to the present invention.
【００１７】図２は研磨剤供給装置における研磨剤循環
方法の第２実施例の説明図であって、研磨剤供給装置Ｆ
2 は、ノズル１０よりパージ等によって放出された研磨
剤（研磨スラリー）９を研磨に支障をきたさない部位に
配設された研磨剤受け１１で受け止め、研磨剤受け１１
の底面に一端側が開口されているとともに他端側がタン
ク１内に解放された返戻路１２に介在された返戻用ポン
プ１３を起動することにより、ノズル１０より放出され
た研磨剤（研磨スラリー）９をタンク１に返戻できるよ
うに工夫されている。これ以外は上述した第１実施例と
同様でよいので説明は省略する。FIG. 2 is an explanatory view of a second embodiment of the method of circulating the abrasive in the abrasive supply device, and shows the abrasive supply device F.
2 is for receiving an abrasive (polishing slurry) 9 discharged from the nozzle 10 by a purge or the like by an abrasive receiver 11 disposed at a portion where the polishing is not hindered.
The polishing agent (polishing slurry) 9 discharged from the nozzle 10 is activated by activating the return pump 13 interposed in the return path 12 whose one end is opened at the bottom of the tank and the other end is opened into the tank 1. Is returned to the tank 1. Except for this point, the second embodiment may be the same as the first embodiment, and a description thereof will not be repeated.
【００１８】続いて、研磨剤供給装置における研磨剤循
環方法の第２実施例を採用した化学機械研磨装置の一例
について説明する。Next, an example of a chemical mechanical polishing apparatus adopting a second embodiment of the abrasive circulation method in the abrasive supply apparatus will be described.
【００１９】この化学機械研磨装置は、図３の（ａ）お
よび（ｂ）に示すように、被加工物であるウエハ等の基
板Ｗを着脱自在に保持して回転させるとともに径方向へ
揺動させるための研磨ステーションＥ1 と、研磨ステー
ションＥ1 の図示上方に配設された研磨ヘッドＥ2 と、
前記研磨ステーションＥ1 の図示上方に前記研磨ヘッド
Ｅ2 と並んで配設されたガイド３１に案内されて前記基
板Ｗの径方向（矢印方向および反矢印方向）へ移動自在
な検出装置３２と、研磨剤（研磨スラリー）が収容され
たタンクより研磨剤（研磨スラリー）を基板Ｗ上に供給
するための、研磨ステーションＥ1 の上方部位と研磨剤
受け１１の上方部位とに移動自在なノズル１０を備えて
いる。As shown in FIGS. 3A and 3B, this chemical mechanical polishing apparatus detachably holds and rotates a substrate W such as a wafer, which is a workpiece, and oscillates in a radial direction. A polishing station E 1 for performing polishing, a polishing head E 2 disposed above the polishing station E 1 in the drawing,
And said polishing station E 1 freely detection device 32 moves the while being guided by the guide 31 which is juxtaposed with the polishing head E 2 upward in the drawing in the radial direction of the substrate W (the direction of the arrow and opposite to the arrow direction), abrasive (abrasive slurry) for supplying abrasive than tanks accommodating a (abrasive slurry) onto the substrate W, movable nozzle 10 to the upper part of the polishing station E 1 of the upper portion and an abrasive received 11 It has.
【００２０】なお、ノズル１０を移動させるかわりに、
研磨剤受け１１をノズル１０の下方部位と研磨に支障を
きたさない位置とに移動自在としてもよい。Incidentally, instead of moving the nozzle 10,
The abrasive receiver 11 may be movable to a position below the nozzle 10 and to a position that does not hinder polishing.
【００２１】研磨ステーションＥ1 は、回転テーブル２
１を支持してその径方向へ揺動させるための揺動機構２
６と、回転テーブル２１を回転させるための回転テーブ
ル回転駆動機構２４および回転テーブル２１をその軸方
向へ移動させるための基板側加圧機構２５を備え、回転
テーブル２１の上面に基板Ｗを着脱自在に保持して回転
させるとともに、径方向へ所定の揺動幅で揺動させ得る
ように構成されている。The polishing station E 1 has a rotating table 2
Swing mechanism 2 for supporting and swinging in the radial direction thereof
6, a rotary table rotation drive mechanism 24 for rotating the rotary table 21 and a substrate-side pressing mechanism 25 for moving the rotary table 21 in the axial direction thereof. , And can be swung in a radial direction with a predetermined swing width.
【００２２】研磨ヘッドＥ2 は、図示しない基台上に立
設された支持部材に回転テーブル２１に対して径方向へ
オーバーハングさせて支持された回転テーブル２１より
も口径の大きな研磨工具２２と、研磨工具２２を回転さ
せるための研磨工具回転駆動機構２７および研磨工具２
２を軸方向へ移動させるための研磨工具側加圧機構２８
を備え、研磨工具２２の図示下面に研磨パッド２３が一
体的に取付けられたものであって、研磨工具２２と一体
に研磨パッド２３を回転させることができるとともに軸
方向へ直線移動させて研磨パッド２３を基板Ｗの被研磨
面に当接させて所定の加工圧を与えたり、基板Ｗから離
間させることができるように構成されている。The polishing head E 2 includes a polishing tool 22 having a larger diameter than the rotary table 21 supported by a support member erected on a base (not shown) so as to overhang the rotary table 21 in the radial direction. Tool rotation drive mechanism 27 for rotating polishing tool 22 and polishing tool 2
Polishing tool side pressing mechanism 28 for moving shaft 2 in the axial direction
A polishing pad 23 is integrally attached to the illustrated lower surface of the polishing tool 22. The polishing pad 23 can be rotated integrally with the polishing tool 22 and moved linearly in the axial direction. It is configured such that a predetermined processing pressure can be applied by bringing the substrate 23 into contact with the surface to be polished of the substrate W, or the substrate 23 can be separated from the substrate W.
【００２３】また、制御装置４０は、研磨中における検
出装置３２により検出された基板Ｗの被研磨面の面形状
が、予め設定した基板Ｗの被研磨面の目標面形状になる
ように、揺動機構２６の揺動を制御するものであって、
基板Ｗの被研磨面における目標面形状を設定できるとと
もに設定された目標面形状を比較部４２へ送る設定部４
１と、設定部４１から送られた前記目標面形状と検出装
置３２によって検出された被研磨面の面形状とを比較し
てその差分値を出力する比較部４２と、比較部４２から
送られた前記差分値に基づいて揺動機構２６の揺動幅お
よび／または揺動位置を制御するための揺動制御信号を
算出して該揺動制御信号を出力する演算部４３と、演算
部４３から送られた前記揺動制御信号に基づいて揺動機
構２６の揺動幅および揺動位置を制御するための制御部
４４を備えている。Further, the control device 40 changes the shape of the surface to be polished of the substrate W detected by the detection device 32 during polishing so that the surface shape of the surface to be polished of the substrate W is set in advance. It controls the swing of the moving mechanism 26,
A setting unit 4 for setting a target surface shape on the surface to be polished of the substrate W and sending the set target surface shape to the comparison unit 42
1, a comparison unit 42 that compares the target surface shape sent from the setting unit 41 with the surface shape of the polished surface detected by the detection device 32, and outputs a difference value between the two. A calculating unit 43 for calculating a swing control signal for controlling the swing width and / or the swing position of the swing mechanism 26 based on the difference value and outputting the swing control signal; And a control unit 44 for controlling the swing width and the swing position of the swing mechanism 26 based on the swing control signal sent from the controller.
【００２４】また、ポンプ４および返戻用ポンプ１３の
起動および停止、弁３の開閉等は、別途設けられた図示
しない研磨装置全体を制御するための中央制御装置によ
って制御できるように構成するとよい。The start and stop of the pump 4 and the return pump 13 and the opening and closing of the valve 3 may be controlled by a central control device (not shown) for controlling the entire polishing apparatus (not shown).
【００２５】なお、研磨工具回転駆動機構２７および回
転テーブル回転駆動機構２４をそれぞれ回転速度が可変
のものとすることにより、両者またはいずれか一方を被
加工物の被研磨面の種類や材質に対応した適正回転速度
で回転させることができる。By setting the rotation speed of the polishing tool rotation drive mechanism 27 and the rotation table rotation drive mechanism 24 to be variable, both or one of them can correspond to the type and material of the surface to be polished of the workpiece. It can be rotated at the appropriate rotation speed.
【００２６】また、加圧機構として、研磨工具側加圧機
構２８および基板側加圧機構２５を設けたものを示した
が、これに限らず加圧機構はいずれか一方に設けられて
いればよい。そして、両者またはいずれか一方の加圧機
構を用いて被加工物の被研磨面の種類や材質に対応した
適性加工圧を与えることができる。Although the pressing mechanism provided with the polishing tool-side pressing mechanism 28 and the substrate-side pressing mechanism 25 has been described, the present invention is not limited to this, and if the pressing mechanism is provided in either one of them. Good. Then, an appropriate working pressure corresponding to the type and material of the surface to be polished of the workpiece can be applied using both or one of the pressing mechanisms.
【００２７】検出装置３２としては、電気的または光学
的に基板の部分的な厚みを検出する厚み測定装置や、電
気的また光学的に研磨の最終点を検出する終点検出装置
が用いられる。そして、基板の径方向において互いに異
なる多数の部位の厚みや設定された終点を検出すること
により、基板の面形状を検出することができる。As the detecting device 32, a thickness measuring device for electrically or optically detecting the partial thickness of the substrate or an end point detecting device for electrically or optically detecting the final point of polishing is used. The surface shape of the substrate can be detected by detecting the thickness and the set end point of many different portions in the radial direction of the substrate.
【００２８】次に動作について説明する。Next, the operation will be described.
【００２９】 設定部４１によって基板Ｗの被研磨面
の目標面形状を設定し、回転テーブル２１の上面に基板
Ｗを着脱自在に保持させ、ついで研磨工具側加圧機構２
８を起動して研磨工具２２を基板Ｗに向けて軸方向へ移
動させることにより所定の加工圧を与えた状態で研磨パ
ッド２３を基板Ｗの被研磨面に当接させる。The setting section 41 sets the target surface shape of the surface to be polished of the substrate W, holds the substrate W on the upper surface of the turntable 21 in a detachable manner, and then presses the polishing tool side pressing mechanism 2
The polishing pad 23 is brought into contact with the surface to be polished of the substrate W in a state in which a predetermined processing pressure is applied by starting the polishing tool 8 and moving the polishing tool 22 in the axial direction toward the substrate W.
【００３０】 上記ののち、研磨剤（研磨スラリ
ー）９を収容したタンク１（図２参照）よりノズル１０
を介して研磨剤（研磨スラリー）を基板Ｗの被研磨面と
研磨パッド２３の基板Ｗに当接する面、つまり研磨工具
の研磨面、との間に供給しつつ、基板Ｗを保持した回転
テーブル２１および研磨工具２２を回転させるとともに
揺動機構２６を揺動させることにより、回転テーブル２
１に保持された基板Ｗを所定のストローク（揺動幅）で
揺動させて化学機械研磨を開始する。After the above, the nozzle 10 from the tank 1 (see FIG. 2) containing the abrasive (polishing slurry) 9
The rotary table holding the substrate W while supplying an abrasive (polishing slurry) between the surface to be polished of the substrate W and the surface of the polishing pad 23 that abuts on the substrate W, ie, the polishing surface of the polishing tool, By rotating the swinging mechanism 26 while rotating the polishing tool 22 and the polishing tool 22,
The chemical mechanical polishing is started by oscillating the substrate W held at 1 by a predetermined stroke (oscillation width).
【００３１】 上記ののち、検出装置３２がガイド
３１に沿って基板Ｗの径方向へ走査されて基板Ｗの被研
磨面の面形状が逐次検出され、制御装置４０によって上
述した如く揺動機構２６の揺動が制御されて均一に研磨
され、被研磨面の面形状が前記目標面形状になった時点
で研磨を終える。After the above, the detection device 32 is scanned in the radial direction of the substrate W along the guide 31 to sequentially detect the surface shape of the polished surface of the substrate W, and the swing mechanism 26 is controlled by the control device 40 as described above. Is controlled so as to be polished uniformly, and the polishing is completed when the surface shape of the surface to be polished becomes the target surface shape.
【００３２】 上記のちの非研磨時において、上述
した如く供給路２に介在された弁３を閉鎖することによ
り、循環路５を通して研磨剤（研磨スラリー）９をタン
ク１へ返戻することにより循環させる。そしてこれに併
行して、ノズル１０を研磨剤受け１１の上方へ移動させ
たのち、所定のタイミングでパージを行ない、研磨剤受
け１１で受けた研磨剤（研磨スラリー）９を返戻路１２
を通してタンク１内へ返戻し、ノズル１０の目詰まり等
を防止する。また、前記パージを行なうかわりに弁３を
開いておき、ノズル１０を研磨剤（研磨スラリー）９を
研磨剤受け１１へ放出し、返戻路１２を通してタンク１
内へ返戻してもよい。これ以外は上記第１実施例と同様
でよいので説明は省略する。At the time of non-polishing, the polishing agent (polishing slurry) 9 is circulated by returning the polishing slurry (polishing slurry) 9 to the tank 1 through the circulation path 5 by closing the valve 3 interposed in the supply path 2 as described above. . At the same time, after the nozzle 10 is moved above the abrasive receiver 11, purging is performed at a predetermined timing, and the abrasive (polishing slurry) 9 received by the abrasive receiver 11 is returned to the return path 12.
Through the tank 1 to prevent the nozzle 10 from being clogged. Instead of purging, the valve 3 is opened, the nozzle 10 discharges the abrasive (polishing slurry) 9 to the abrasive receiver 11, and the tank 1 passes through the return path 12.
You may return it inside. Except for this point, the second embodiment may be the same as the first embodiment, and a description thereof will not be repeated.
【００３３】なお、本発明は、上述した図３に示す化学
機械研磨装置に限らず、図４に示した従来の化学機械研
磨装置等にも適用できることはいうまでもない。It is needless to say that the present invention can be applied not only to the chemical mechanical polishing apparatus shown in FIG. 3 but also to the conventional chemical mechanical polishing apparatus shown in FIG.
【００３４】本発明の研磨剤供給装置における研磨剤循
環方法を採用した化学機械研磨方法により研磨するに好
適な被加工物としては、Ｓｉ、Ｇｅ、ＧａＡｓ、ＩｎＰ
等の半導体ウエハ、または、表面上に複数の島状の半導
体領域が形成された石英やガラス基板が挙げられる。Workpieces suitable for polishing by the chemical mechanical polishing method employing the abrasive circulation method in the abrasive supply apparatus of the present invention include Si, Ge, GaAs, and InP.
And a quartz or glass substrate having a plurality of island-shaped semiconductor regions formed on the surface.
【００３５】いずれも、フォトリソグラフィーによりパ
ターニングされた配線や絶縁領域を形成するために、平
坦な面が要求されるものである。よって、被研磨面は、
絶縁膜または金属膜あるいはそれらが混在した面になっ
ている。In any case, a flat surface is required to form a wiring or an insulating region patterned by photolithography. Therefore, the surface to be polished
The surface is an insulating film or a metal film or a mixed surface thereof.
【００３６】また、研磨工具の研磨面としては、不織
布、発泡ポリウレタン等のパッドの表面を利用すること
が望ましい。As the polishing surface of the polishing tool, it is desirable to use the surface of a pad made of a nonwoven fabric, polyurethane foam or the like.
【００３７】本発明に用いられる研磨剤としては、微粒
子を含む液体が望ましく、具体的には、微粒子としては
シリカ（ＳｉＯ2 ）、アルミナ（Ａｌ2 Ｏ3 ）、酸化マ
ンガン（ＭｎＯ2 ）、酸化セリウム（ＣｅＯ）等が挙げ
られ、液体としては水酸化ナトリウム（ＮａＯＨ）、水
酸化カリウム（ＫＯＨ）、過酸化水素水（Ｈ2 Ｏ2 ）等
が挙げられる。As the abrasive used in the present invention, a liquid containing fine particles is desirable. Specifically, fine particles include silica (SiO 2 ), alumina (Al 2 O 3 ), manganese oxide (MnO 2 ), Examples of the liquid include sodium hydroxide (NaOH), potassium hydroxide (KOH), and aqueous hydrogen peroxide (H 2 O 2 ).
【００３８】微粒子の粒径は８ｎｍ〜５０ｎｍが好まし
く、例えば、水酸化カリウム（ＫＯＨ）のｐＨを変化さ
せることで粒子の凝集の度合いを制御できる。特に、非
研磨時に研磨スラリーを循環させることで、非研磨時に
おける微粒子の沈殿や凝集の発生を防止して研磨レート
が設定値からずれないようにすることができる。The particle size of the fine particles is preferably 8 nm to 50 nm. For example, the degree of aggregation of the particles can be controlled by changing the pH of potassium hydroxide (KOH). In particular, by circulating the polishing slurry during non-polishing, it is possible to prevent precipitation and aggregation of fine particles during non-polishing and to prevent the polishing rate from deviating from a set value.
【００３９】半導体表面の研磨の際には、シリカ分散水
酸化ナトリウム溶液が好ましく、絶縁膜の研磨の際には
シリカ分散水酸化カリウム溶液が好ましく、タングステ
ン等の金属膜の研磨の際にはアルミナや酸化マンガン分
散の過酸化水素水が好ましいものである。When polishing the semiconductor surface, a silica-dispersed sodium hydroxide solution is preferable, when polishing an insulating film, a silica-dispersed potassium hydroxide solution is preferable, and when polishing a metal film such as tungsten, alumina is used. And manganese oxide-dispersed hydrogen peroxide water are preferred.
【００４０】例えば、半導体表面の研磨の場合、研磨剤
としてシリカ分散ＮａＯＨ水溶液を用いると、シリコン
表面がＮａＯＨと反応し反応生成分であるＮａ2 ＳｉＯ
3 層を作る。これをシリカと研磨パッドによる機械的研
磨により除去し、新たなシリコン表面を露出させること
で、反応が進行する。このようなメカニズムが化学機械
研磨と呼ばれる由縁である。For example, in the case of polishing a semiconductor surface, when a silica-dispersed aqueous solution of NaOH is used as an abrasive, the silicon surface reacts with NaOH and the reaction product Na 2 SiO
Make three layers. This is removed by mechanical polishing using silica and a polishing pad to expose a new silicon surface, whereby the reaction proceeds. Such a mechanism is called a chemical mechanical polishing.
【００４１】[0041]
【発明の効果】本発明は上述のとおり構成されているの
で、次に記載するような効果を奏する。Since the present invention is configured as described above, the following effects can be obtained.
【００４２】非研磨時において、研磨剤（研磨スラリ
ー）を循環路を通してタンクに返戻することによって循
環させるため、研磨剤（研磨スラリー）が絶えず流動し
て微粒子が沈殿したり凝縮することが防止される。その
結果、研磨レートが設定値からずれることがなく、高精
度な研磨を行なうことができる。During non-polishing, the abrasive (polishing slurry) is circulated by returning it to the tank through the circulation path, thereby preventing the abrasive (polishing slurry) from constantly flowing to prevent fine particles from settling or condensing. You. As a result, the polishing rate does not deviate from the set value, and highly accurate polishing can be performed.
【図１】本発明の第１実施例の研磨剤供給装置における
研磨剤循環方法の第１実施例の説明図である。FIG. 1 is an explanatory diagram of a first embodiment of an abrasive circulation method in an abrasive supply device according to a first embodiment of the present invention.
【図２】本発明の研磨剤供給装置における研磨剤循環方
法の第２実施例の説明図である。FIG. 2 is an explanatory view of a second embodiment of an abrasive circulation method in the abrasive supply device of the present invention.
【図３】第２実施例の研磨剤供給装置における研磨剤循
環方法を採用した化学機械研磨装置の一例を示し、
（ａ）は主要部の模式斜視図、（ｂ）は制御装置のブロ
ック図である。FIG. 3 shows an example of a chemical mechanical polishing apparatus employing an abrasive circulation method in an abrasive supply apparatus of a second embodiment,
(A) is a schematic perspective view of a main part, and (b) is a block diagram of a control device.
【図４】従来の化学機械研磨装置の一例を示す模式斜視
図である。FIG. 4 is a schematic perspective view showing an example of a conventional chemical mechanical polishing apparatus.
１ タンク ２ 供給路 ３ 弁 ４ ポンプ ５ 循環路 ６ 攪拌機 ７ ヒータ ８ ヒータ温度制御部 ９ 研磨剤（研磨スラリー） １０ ノズル １１ 研磨剤受け １２ 返戻路 １３ 返戻用ポンプ ２１ 回転テーブル ２２ 研磨工具 ２３ 研磨パッド ２４ 回転テーブル回転駆動機構 ２５ 基板側加圧機構 ２６ 揺動機構 ２７ 研磨工具回転駆動機構 ２８ 研磨工具側加圧機構 ３１ ガイド ３２ 検出装置 ４０ 制御装置 ４１ 設定部 ４２ 比較部 ４３ 演算部 ４４ 制御部 DESCRIPTION OF SYMBOLS 1 Tank 2 Supply path 3 Valve 4 Pump 5 Circulation path 6 Stirrer 7 Heater 8 Heater temperature control part 9 Abrasive (polishing slurry) 10 Nozzle 11 Abrasive receiver 12 Return path 13 Return pump 21 Rotary table 22 Polishing tool 23 Polishing pad Reference Signs List 24 Rotary table rotation drive mechanism 25 Substrate side pressing mechanism 26 Swinging mechanism 27 Polishing tool rotation driving mechanism 28 Polishing tool side pressing mechanism 31 Guide 32 Detector 40 Control unit 41 Setting unit 42 Comparison unit 43 Operation unit 44 Control unit
Claims (4)
給装置において、前記研磨剤供給装置の供給路に介在さ
れた弁の上流側から分岐する循環路を設け、非研磨時に
前記循環路を通して研磨剤をタンクへ返戻することによ
って研磨剤を循環させることを特徴とする研磨剤供給装
置における研磨剤循環方法。An abrasive supply device used in a chemical mechanical polishing apparatus, wherein a circulation path branching from an upstream side of a valve interposed in a supply path of the abrasive supply apparatus is provided, and polishing is performed through the circulation path during non-polishing. A method for circulating an abrasive in an abrasive supply device, wherein the abrasive is circulated by returning the agent to a tank.
る研磨剤を受けるための研磨剤受けと、前記研磨剤受け
から研磨剤をタンクへ返戻するための返戻路を設け、前
記返戻路を介してノズルから放出された研磨剤をタンク
へ返戻することを特徴とする請求項１記載の研磨剤供給
装置における研磨剤循環方法。2. An abrasive receiving device for receiving an abrasive discharged from a nozzle of a supply passage during non-polishing, and a return passage for returning the abrasive from the abrasive receiving agent to a tank are provided. 2. A method for circulating an abrasive in an abrasive supply apparatus according to claim 1, wherein the abrasive discharged from the nozzle through the nozzle is returned to the tank.
ことを特徴とする請求項１または２に記載の研磨剤供給
装置における研磨剤循環方法。3. A method for circulating an abrasive in an abrasive supply apparatus according to claim 1, wherein the abrasive contained in the tank is agitated.
ることを特徴とする請求項１ないし３いずれか１項記載
の研磨剤供給装置における研磨剤循環方法。4. The method of circulating abrasive in an abrasive supply apparatus according to claim 1, wherein the temperature of the abrasive is controlled to a predetermined temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19007796A JPH1015822A (en) | 1996-07-01 | 1996-07-01 | Abrasive circulating method for abrasive supplying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19007796A JPH1015822A (en) | 1996-07-01 | 1996-07-01 | Abrasive circulating method for abrasive supplying device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1015822A true JPH1015822A (en) | 1998-01-20 |
Family
ID=16251987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19007796A Withdrawn JPH1015822A (en) | 1996-07-01 | 1996-07-01 | Abrasive circulating method for abrasive supplying device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1015822A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000308967A (en) * | 1999-04-23 | 2000-11-07 | Matsushita Electronics Industry Corp | Regenerator of abrasive and regenerating method of abrasive |
| US6319099B1 (en) | 1998-11-24 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| KR100474365B1 (en) * | 2000-01-06 | 2005-03-08 | 닛본 덴끼 가부시끼가이샤 | Apparatus for polishing wafer and method of doing the same |
| KR100835330B1 (en) * | 2000-10-06 | 2008-06-04 | 가부시키가이샤 에바라 세이사꾸쇼 | Method for supplying slurry to polishing apparatus |
| KR100850179B1 (en) * | 2003-12-22 | 2008-08-04 | 동부일렉트로닉스 주식회사 | Slurry suppler having slurry circulation means in a slurry tank |
| WO2009019756A1 (en) | 2007-08-06 | 2009-02-12 | Teoss Co., Ltd. | Silicon heating furnace |
| JP2011005590A (en) * | 2009-06-25 | 2011-01-13 | Denso Corp | Polishing device |
| JP2014000644A (en) * | 2012-06-19 | 2014-01-09 | Disco Abrasive Syst Ltd | Liquid mixture supply system |
| WO2019087271A1 (en) * | 2017-10-31 | 2019-05-09 | 株式会社 日立ハイテクノロジーズ | Dispensing device and sample analysis device |
| CN109759957A (en) * | 2019-02-21 | 2019-05-17 | 中国工程物理研究院激光聚变研究中心 | The circulating feeding liquid device and feed liquid method of polishing fluid in ring throwing |
-
1996
- 1996-07-01 JP JP19007796A patent/JPH1015822A/en not_active Withdrawn
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7331844B2 (en) | 1998-11-24 | 2008-02-19 | Matsushita Electric Industrial Co., Ltd. | Polishing method |
| US7052377B2 (en) | 1998-11-24 | 2006-05-30 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| US7249995B2 (en) | 1998-11-24 | 2007-07-31 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| US6319099B1 (en) | 1998-11-24 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| US6790127B2 (en) | 1998-11-24 | 2004-09-14 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| KR100611830B1 (en) * | 1998-11-24 | 2006-08-11 | 마츠시타 덴끼 산교 가부시키가이샤 | Apparatus and method for feeding slurry |
| US7166018B2 (en) | 1998-11-24 | 2007-01-23 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
| JP2000308967A (en) * | 1999-04-23 | 2000-11-07 | Matsushita Electronics Industry Corp | Regenerator of abrasive and regenerating method of abrasive |
| KR100474365B1 (en) * | 2000-01-06 | 2005-03-08 | 닛본 덴끼 가부시끼가이샤 | Apparatus for polishing wafer and method of doing the same |
| KR100835330B1 (en) * | 2000-10-06 | 2008-06-04 | 가부시키가이샤 에바라 세이사꾸쇼 | Method for supplying slurry to polishing apparatus |
| KR100850179B1 (en) * | 2003-12-22 | 2008-08-04 | 동부일렉트로닉스 주식회사 | Slurry suppler having slurry circulation means in a slurry tank |
| WO2009019756A1 (en) | 2007-08-06 | 2009-02-12 | Teoss Co., Ltd. | Silicon heating furnace |
| JP2011005590A (en) * | 2009-06-25 | 2011-01-13 | Denso Corp | Polishing device |
| JP2014000644A (en) * | 2012-06-19 | 2014-01-09 | Disco Abrasive Syst Ltd | Liquid mixture supply system |
| WO2019087271A1 (en) * | 2017-10-31 | 2019-05-09 | 株式会社 日立ハイテクノロジーズ | Dispensing device and sample analysis device |
| US11313872B2 (en) | 2017-10-31 | 2022-04-26 | Hitachi High-Tech Corporation | Dispensing device and sample analysis device |
| CN109759957A (en) * | 2019-02-21 | 2019-05-17 | 中国工程物理研究院激光聚变研究中心 | The circulating feeding liquid device and feed liquid method of polishing fluid in ring throwing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6162112A (en) | Chemical-mechanical polishing apparatus and method | |
| US8870625B2 (en) | Method and apparatus for dressing polishing pad, profile measuring method, substrate polishing apparatus, and substrate polishing method | |
| US5540810A (en) | IC mechanical planarization process incorporating two slurry compositions for faster material removal times | |
| US6152805A (en) | Polishing machine | |
| US20020023715A1 (en) | Substrate polishing apparatus and substrate polishing mehod | |
| JPH0929620A (en) | Polishing device | |
| US6258205B1 (en) | Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material | |
| WO2010062910A2 (en) | Using optical metrology for feed back and feed forward process control | |
| JPH1015822A (en) | Abrasive circulating method for abrasive supplying device | |
| US6595220B2 (en) | Apparatus for conveying a workpiece | |
| JPH10329011A (en) | Precise polishing device and method | |
| JP3011113B2 (en) | Substrate polishing method and polishing apparatus | |
| JP2000280170A (en) | Abrasive liquid supply device | |
| JP2011224758A (en) | Polishing method | |
| US6354908B2 (en) | Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system | |
| US20010010305A1 (en) | Precision polishing method and apparatus of substrate | |
| US6929755B2 (en) | Method of and apparatus for chemical mechanical polishing and slurry supplying device | |
| US6316276B1 (en) | Apparatus and method of planarizing a semiconductor wafer that includes a first reflective substance and a second reflective substance | |
| JPH10315131A (en) | Polishing method of semiconductor wafer and device therefor | |
| JPH10146751A (en) | Chemical machine polishing device | |
| JPH0878369A (en) | Polishing end point detecting method and its polishing apparatus | |
| US6478659B2 (en) | Chemical mechanical polishing method for slurry free fixed abrasive pads | |
| US20070243797A1 (en) | Polishing method and polishing apparatus | |
| JPH1015810A (en) | Chemical-mechanical polishing method and its device | |
| JPH09300209A (en) | Chemical machinery polishing device and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050216 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050426 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050816 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20050906 |