JPH0878369A - Polishing end point detecting method and its polishing apparatus - Google Patents
Polishing end point detecting method and its polishing apparatusInfo
- Publication number
- JPH0878369A JPH0878369A JP21283694A JP21283694A JPH0878369A JP H0878369 A JPH0878369 A JP H0878369A JP 21283694 A JP21283694 A JP 21283694A JP 21283694 A JP21283694 A JP 21283694A JP H0878369 A JPH0878369 A JP H0878369A
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- Prior art keywords
- polishing
- temperature
- face
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- time
- Prior art date
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体装置等の電子
材料に適用して好適な研磨の終点検出方法及びその研磨
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing end point detecting method suitable for application to electronic materials such as semiconductor devices, and a polishing apparatus therefor.
【０００２】[0002]
【従来の技術】半導体装置を製造するウェハーとして、
例えば張り合わせ方式のＳＯＩ（Silicon on Insulato
r）ウェハーが知られている。この張り合わせＳＯＩウ
ェハーは、表面にパターンを形成した第１のＳｉ基板
と、第２のＳｉ基板をパターン形成部を介して張り合わ
せたものである。このＳＯＩウェハーを研磨する場合、
パターン内のシリコン（Ｓｉ）の過剰研磨を防止するた
め、全面に絶縁層例えばＳｉＯ2膜が露出した時に研磨
を停止する必要がある。2. Description of the Related Art As a wafer for manufacturing a semiconductor device,
For example, SOI (Silicon on Insulato)
r) Wafers are known. In this bonded SOI wafer, a first Si substrate having a pattern formed on its surface and a second Si substrate are bonded via a pattern forming portion. When polishing this SOI wafer,
In order to prevent excessive polishing of silicon (Si) in the pattern, it is necessary to stop polishing when an insulating layer such as a SiO 2 film is exposed on the entire surface.
【０００３】従来、上述したＳＯＩウェハー等の例えば
ＳｉＯ2からなる研磨ストッパー層を有する基板を研磨
する方法としては、図４に示す研磨装置を用いて研磨を
行っていた。Conventionally, as a method of polishing a substrate having a polishing stopper layer made of, for example, SiO 2 such as the above-mentioned SOI wafer, polishing has been performed by using a polishing apparatus shown in FIG.
【０００４】図４において、１は研磨装置の基盤となる
回転定盤、２は研磨対象物（被研磨部材）を研磨する研
磨布、３は被研磨部材である研磨基板、４は研磨基板３
を保持するための基板保持具、６は研磨液である。この
ように従来の研磨装置は研磨布２上に配置した所定の研
磨基板３を、回転支持体である回転定盤１で回転させる
一方、研磨基板３を基板保持具４で回転保持して研磨を
行っていた。In FIG. 4, 1 is a rotary platen which is a base of a polishing apparatus, 2 is a polishing cloth for polishing an object to be polished (a member to be polished), 3 is a polishing substrate which is a member to be polished, and 4 is a polishing substrate 3.
The substrate holder 6 for holding the substrate is a polishing liquid. As described above, in the conventional polishing apparatus, the predetermined polishing substrate 3 placed on the polishing cloth 2 is rotated by the rotary platen 1 which is a rotary support, while the polishing substrate 3 is rotationally held by the substrate holder 4 to polish. Was going on.
【０００５】[0005]
【発明が解決しようとする課題】ところで、上述の研磨
装置を使用した研磨方法では、例えばシリコン層のみの
研磨の終点判定の手段がない。一般には被研磨部材の厚
さと研磨レートから算出される研磨時間設定のみで研磨
を停止するようにしているため、研磨布や研磨液等の経
時変化により研磨レートが一定しない現状では研磨代
（厚さ）のバラツキが生じていた。By the way, in the polishing method using the above-mentioned polishing apparatus, there is no means for determining the end point of polishing only the silicon layer, for example. Generally, the polishing is stopped only by setting the polishing time calculated from the thickness of the member to be polished and the polishing rate. Therefore, the polishing allowance (thickness There was a variation of (S).
【０００６】実際には、ストッパー層迄の研磨がなされ
ず途中で研磨を終了させてしまって再研磨が必要となっ
たり、また十分にストッパー層が露出された後も研磨が
なされたためパターン内のＳｉが過剰に研磨されたりし
て、面内均一性が悪い基板となる欠点があった。Actually, since the polishing up to the stopper layer is not performed, the polishing is terminated in the middle and re-polishing is required, and the polishing is performed even after the stopper layer is sufficiently exposed. There is a drawback that Si is excessively polished, resulting in a substrate having poor in-plane uniformity.
【０００７】そこで、この発明は研磨の終点を高精度に
検出し得る研磨の終点検出方法及びその研磨装置を提供
することを目的とする。Therefore, an object of the present invention is to provide a polishing end point detecting method and a polishing apparatus therefor capable of detecting the polishing end point with high accuracy.
【０００８】[0008]
【課題を解決するための手段】上述の課題を解決するた
め、本発明の請求項１にかかる研磨の終点検出方法にお
いて、摩擦係数の異なる材料層を備えた基板を研磨する
に際し、研磨温度変化を検出し、該研磨温度が所定温度
に達した時点で研磨を自動的に停止することを特徴とす
るものである。In order to solve the above-mentioned problems, in the method for detecting the end point of polishing according to claim 1 of the present invention, when polishing a substrate having material layers having different friction coefficients, the polishing temperature change Is detected and polishing is automatically stopped when the polishing temperature reaches a predetermined temperature.
【０００９】また、本発明の請求項２によれば、請求項
１において、研磨温度が所定温度に達した後、更に、一
定時間経過後に研磨を自動的に停止することを特徴とす
るものである。According to a second aspect of the present invention, in the first aspect, the polishing is automatically stopped after the polishing temperature reaches a predetermined temperature and further after a lapse of a predetermined time. is there.
【００１０】更にまた、上述の課題を解決するため、本
発明の請求項３によれば研磨手段を表面に配置した回転
支持体と、研磨手段上に載置される被研磨部材を回転保
持する被研磨部材回転保持手段を有する研磨装置におい
て、被研磨部材の少なくとも一部またはその近傍に研磨
温度検出手段を設けると共に該研磨温度検出手段で検出
された研磨温度が所定温度に達した時点で研磨を停止す
る制御手段を設けたことを特徴とするものである。Further, in order to solve the above-mentioned problems, according to claim 3 of the present invention, a rotary support having polishing means arranged on its surface and a member to be polished placed on the polishing means are held in rotation. In a polishing apparatus having a member for rotating and holding a member to be polished, a polishing temperature detecting unit is provided at least at or near the member to be polished, and polishing is performed when the polishing temperature detected by the polishing temperature detecting unit reaches a predetermined temperature. Is provided with a control means for stopping.
【００１１】また、本発明の請求項４によれば、請求項
３において、研磨温度検出手段が熱電対又は赤外線温度
検出器であることを特徴とするものである。According to a fourth aspect of the present invention, in the third aspect, the polishing temperature detecting means is a thermocouple or an infrared temperature detector.
【００１２】[0012]
【作用】本発明によれば、熱電対で検出する場合の例と
して図２に示した熱電対１１と制御ユニット１４を備え
た研磨装置１０を用いて研磨することにより研磨温度変
化を検出できるため、研磨対象部材の変化を検知するこ
とができ、高精度に研磨終点を自動的に検出することが
できる。According to the present invention, as an example of detection with a thermocouple, a polishing temperature change can be detected by polishing with the polishing apparatus 10 having the thermocouple 11 and the control unit 14 shown in FIG. The change in the member to be polished can be detected, and the polishing end point can be automatically detected with high accuracy.
【００１３】また、本発明では研磨温度が所定温度に達
した後、更に一定時間経過した後に研磨を停止するた
め、研磨の終点を確実に検出することが可能となる。Further, according to the present invention, since the polishing is stopped after the polishing temperature reaches the predetermined temperature and further after a predetermined time has passed, the end point of the polishing can be surely detected.
【００１４】[0014]
【実施例】以下、本発明の実施例を図面を参照して詳細
に説明する。図１は本発明に係る研磨の終点検出方法を
説明するための工程図であり、図２はその方法を実施す
るための研磨装置である。図２で示した研磨装置の構成
部分のうち、図４で示した構成部分と同一の構成部分は
同一符号で示し、その詳細は説明を省略した。Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a process diagram for explaining a polishing end point detecting method according to the present invention, and FIG. 2 is a polishing apparatus for carrying out the method. Of the constituent parts of the polishing apparatus shown in FIG. 2, the same constituent parts as the constituent parts shown in FIG. 4 are denoted by the same reference numerals, and the detailed description thereof is omitted.
【００１５】まず本実施例では、図１（ａ）に示すよう
に、５インチのシリコン（Ｓｉ）基板３０の表面をパタ
ーニングした後、その全表面にＣＶＤ法により厚さ０．
５〜１．０μｍの二酸化シリコン（ＳｉＯ2）膜３１を
形成し、更にその上面にＣＶＤ法により厚さ５μｍ程度
のポリシリコン（Ｐｏｌｙ Ｓｉ）膜３３を形成する。
この時点では、Ｐｏｌｙ Ｓｉ膜３３がＳｉ基板３０上
方に凹凸状に形成されている。First, in the present embodiment, as shown in FIG. 1A, after patterning the surface of a 5-inch silicon (Si) substrate 30, the entire surface of the silicon (Si) substrate 30 is made to have a thickness of 0.
A silicon dioxide (SiO 2 ) film 31 having a thickness of 5 to 1.0 μm is formed, and a polysilicon (Poly Si) film 33 having a thickness of about 5 μm is further formed on the upper surface thereof by the CVD method.
At this point, the Poly Si film 33 is formed in an uneven shape above the Si substrate 30.
【００１６】続いて、図１（ｂ）に示すように、Ｐｏｌ
ｙ Ｓｉ膜３３の凸部（段差）をポリッシュにより平坦
化し、その平坦化されたＰｏｌｙ Ｓｉ平坦膜３３ａ面
に第２のシリコン（Ｓｉ）基板４０を張り合わせ、張り
合わせＳＯＩウェハーを形成する（図１（ｃ））。Then, as shown in FIG. 1 (b), Pol
The convex portion (step) of the y Si film 33 is flattened by polishing, and the second silicon (Si) substrate 40 is bonded to the surface of the flattened Poly Si flat film 33a to form a bonded SOI wafer (see FIG. c)).
【００１７】次に、図１（ｄ）に示すように、張り合わ
された基板を上下逆にして張り合わせＳＯＩウェハーを
構成するＳｉＯ2膜３１とＳｉ基板３０及びＰｏｌｙ Ｓ
ｉ平坦膜３３ａのそれぞれ外周側面を面取りし、図１
（ｅ）に示すようにＳｉ基板３０の上面（図１（ａ）で
は下面に対応）を研削機により研削する。この研削では
ＳｉＯ2膜３１上に数μｍの厚さにＳｉ基板３０が残存
するように平坦に行う。Next, as shown in FIG. 1D, the bonded substrates are turned upside down to form a bonded SOI wafer, the SiO 2 film 31, the Si substrate 30 and the poly S.
The outer peripheral side surface of each of the i flat films 33a is chamfered, and
As shown in (e), the upper surface of the Si substrate 30 (corresponding to the lower surface in FIG. 1A) is ground by a grinder. This grinding is performed flat so that the Si substrate 30 remains on the SiO 2 film 31 to a thickness of several μm.
【００１８】このようにして得られた図１（ｅ）の状態
のパターンを形成した張り合わせＳＯＩウェハーを、図
２の研磨装置１０に研磨基板３としてセットする。この
時、図１（ｅ）に示された張り合わせＳＯＩ基板のＳｉ
基板３０面が研磨されるように下に向けられる。The bonded SOI wafer on which the pattern in the state shown in FIG. 1E is formed is set as the polishing substrate 3 in the polishing apparatus 10 shown in FIG. At this time, Si of the bonded SOI substrate shown in FIG.
The substrate 30 surface is faced down so that it is polished.
【００１９】研磨装置１０は図４に示した従来の研磨装
置の構成に、更に研磨温度を検出する熱電対１１、回転
式接触端子１２、信号ケーブル１３、制御ユニット１４
及び制御信号ケーブル１６等が付加された構成となって
いる。The polishing apparatus 10 has the structure of the conventional polishing apparatus shown in FIG. 4, and further includes a thermocouple 11, a rotary contact terminal 12, a signal cable 13, and a control unit 14 for detecting the polishing temperature.
Also, the control signal cable 16 and the like are added.
【００２０】熱電対１１は研磨基板３の裏面または裏面
近傍に配置され、研磨温度を検出し、検出した信号は回
転式接触端子１２により外部へ取り出される。The thermocouple 11 is arranged on the back surface of the polishing substrate 3 or in the vicinity of the back surface, detects the polishing temperature, and the detected signal is taken out by the rotary contact terminal 12.
【００２１】以下、上述した図１（ｅ）の構造の研磨を
説明する。まず、本研磨装置でＳｉ基板３０を所定の回
転数で研磨していく。ＳｉはＳｉＯ2より摩擦係数が大
きいので発生する熱量が大きく、Ｓｉを研磨している時
の方が研磨温度が高くなる。従って、同一研磨条件では
ＳｉＯ2の研磨温度は低くなる。本実施例は、このＳｉ
とＳｉＯ2の研磨温度変化を検出して研磨の終点を検出
する。図１（ｆ）が研磨終点時の状態であり、３０ａは
研磨後のＳｉ基板である。The polishing of the structure shown in FIG. 1E will be described below. First, the Si substrate 30 is polished by the present polishing device at a predetermined rotation speed. Since Si has a larger friction coefficient than SiO 2 , the amount of heat generated is large, and the polishing temperature becomes higher when Si is being polished. Therefore, under the same polishing condition, the polishing temperature of SiO 2 becomes low. In this embodiment, the Si
And the polishing temperature change of SiO 2 is detected to detect the polishing end point. FIG. 1F shows the state at the end of polishing, and 30a is the Si substrate after polishing.
【００２２】Ｓｉ面を研磨し始めると図３に示すよう
に、研磨時間の経過と共に研磨温度はｔ3迄上昇し、そ
の温度で安定する。研磨が進行してＳｉ面からＳｉＯ2
面（ＳｉＯ2膜３１）が露出し始めると研磨温度も低下
し始め、全面がＳｉＯ2面になると研磨温度はｔ1で安定
する。When polishing of the Si surface is started, as shown in FIG. 3, the polishing temperature rises to t3 with the lapse of polishing time, and becomes stable at that temperature. As the polishing progresses, SiO 2 is removed from the Si surface.
When the surface (SiO 2 film 31) begins to be exposed, the polishing temperature also begins to decrease, and when the entire surface becomes the SiO 2 surface, the polishing temperature stabilizes at t1.
【００２３】信号の検出方法としては、研磨温度がｔ3
からｔ1へ低下する間の温度に設定した温度ｔ2を通過す
る時点迄の研磨時間Ｔ1の信号を検出する。時間Ｔ1はＳ
ＯＩウェハー全面がＳｉ面からＳｉＯ2面に変化する途
中の信号であるため、全面がＳｉＯ2面になるための余
裕時間を考慮した時間Ｔ2で研磨を停止する。Ｔ1からＴ
2迄の時間は研磨する材料に応じて適宜決定される。As a method of detecting a signal, the polishing temperature is t3.
The signal of the polishing time T1 up to the point of passing the temperature t2 set to the temperature during the decrease from t1 to t1 is detected. Time T1 is S
Since the signal is in the process of changing the entire surface of the OI wafer from the Si surface to the SiO 2 surface, the polishing is stopped at time T 2 in consideration of the margin time for the entire surface to become the SiO 2 surface. T1 to T
The time up to 2 is appropriately determined according to the material to be polished.
【００２４】上述した信号検出のシーケンス動作を図２
と関連させて説明する。FIG. 2 shows the sequence operation of signal detection described above.
It will be explained in relation to.
【００２５】熱電対１１で検出した研磨ウェハーの温度
による電圧信号は、回転式接触端子１２で外部へ導か
れ、ケーブル１３を経由して制御ユニット１４に入る。
制御ユニット１４はある研磨時間を経過した後、急激な
温度変化点ｔ2信号と、その後Ｔ2迄の時間経過で研磨が
停止するように、あらかじめ設定しておく。実際の研磨
では、Ｔ2の時間になると制御ユニット１４のリレーが
動作して、研磨液停止→洗浄水供給→回転停止の各動作
を行うことになる。この検出方法は基本的に研磨材料の
摩擦係数の違いによる研磨温度の変化を利用するもので
あるため、例えば初めにＳｉＯ2を研磨しＳｉ層で止め
たい場合は、本実施例とは反対に温度上昇の変化点を検
出することにより可能となる。従って、研磨温度に違い
の生じる材料であれば、どのような研磨材料でもその界
面で研磨を自動的に停止させることができる。A voltage signal according to the temperature of the polished wafer detected by the thermocouple 11 is guided to the outside by the rotary contact terminal 12, and enters the control unit 14 via the cable 13.
The control unit 14 is preset so that after a certain polishing time elapses, the polishing is stopped after a sharp temperature change point t2 signal and after the time elapses until T2. In the actual polishing, at time T2, the relay of the control unit 14 operates to perform the operations of stopping the polishing liquid, supplying the cleaning water, and stopping the rotation. Since this detection method is to utilize a change in polishing temperature due to a difference in coefficient of friction essentially abrasive material, for example, when you want to stop at the Si layer by polishing of SiO 2 at the beginning, in contrast to the present embodiment It becomes possible by detecting the change point of the temperature rise. Therefore, as long as the polishing temperature is different, any polishing material can automatically stop polishing at its interface.
【００２６】更に、第２の実施例として、赤外線温度検
出器を用いる方法もある。この場合は研磨布２の表面温
度を研磨中に非接触で検出するため、出力信号を直接制
御ユニット１４へ送ることができ回転式接触端子１２は
不用となる。Further, as a second embodiment, there is also a method using an infrared temperature detector. In this case, since the surface temperature of the polishing cloth 2 is detected without contact during polishing, the output signal can be directly sent to the control unit 14, and the rotary contact terminal 12 is unnecessary.
【００２７】[0027]
【発明の効果】以上説明したように本発明によれば、各
材料の研磨温度を検出することにより研磨対象材を区別
して研磨の終点を検出するようにしたものである。その
ため、研磨残りや過剰研磨のない面内均一性を向上させ
た高精度の研磨終点検出を行うことができる。As described above, according to the present invention, by detecting the polishing temperature of each material, the material to be polished is distinguished and the end point of polishing is detected. Therefore, it is possible to perform highly accurate polishing end point detection with improved in-plane uniformity without polishing residue or excessive polishing.
【００２８】しかも研磨温度、時間等を制御することが
でき、終点検出を自動化することができ、量産化にも対
応し易くなる。Moreover, the polishing temperature, time, etc. can be controlled, the end point detection can be automated, and mass production can be easily accommodated.
【図１】本発明に係る研磨の終点検出方法の一実施例を
説明するための工程図である。FIG. 1 is a process chart for explaining one embodiment of a polishing end point detecting method according to the present invention.
【図２】本発明に係る研磨装置の一実施例を示す図であ
る。FIG. 2 is a diagram showing an embodiment of a polishing apparatus according to the present invention.
【図３】本発明に係る研磨の終点検出方法を説明するた
めの研磨温度−研磨時間の関係を示す図である。FIG. 3 is a diagram showing a relationship between a polishing temperature and a polishing time for explaining a polishing end point detecting method according to the present invention.
【図４】従来の研磨装置を示す図である。FIG. 4 is a diagram showing a conventional polishing apparatus.
１ 回転定盤 ２ 研磨布 ３ 研磨基板 ４ 基板保持具 ６ 研磨液 １０ 研磨装置 １１ 熱電対 １２ 回転式接触端子 １３ 信号ケーブル １４ 制御ユニット １６ 制御信号ケーブル ３０ Ｓｉ基板 ３１ ＳｉＯ2膜 ３３ Ｐｏｌｙ Ｓｉ膜 ３３ａ Ｐｏｌｙ Ｓｉ平坦膜 ４０ Ｓｉ基板DESCRIPTION OF SYMBOLS 1 rotating surface plate 2 polishing cloth 3 polishing substrate 4 substrate holder 6 polishing liquid 10 polishing device 11 thermocouple 12 rotary contact terminal 13 signal cable 14 control unit 16 control signal cable 30 Si substrate 31 SiO 2 film 33 Poly Si film 33a Poly Si flat film 40 Si substrate
Claims (4)
研磨するに際し、研磨温度変化を検出し、該研磨温度が
所定温度に達した時点で研磨を自動的に停止することを
特徴とする研磨の終点検出方法。1. When polishing a substrate provided with a material layer having a different friction coefficient, a change in the polishing temperature is detected, and the polishing is automatically stopped when the polishing temperature reaches a predetermined temperature. Method of detecting end point of polishing.
に、一定時間経過後に上記研磨を自動的に停止すること
を特徴とする請求項１記載の研磨の終点検出方法。2. The method of detecting the end point of polishing according to claim 1, wherein after the polishing temperature reaches a predetermined temperature, the polishing is automatically stopped after a certain period of time has elapsed.
と、 上記研磨手段上に載置される被研磨部材を回転保持する
被研磨部材回転保持手段を有する研磨装置において、 上記被研磨部材の少なくとも一部またはその近傍に研磨
温度検出手段を設けると共に該研磨温度検出手段で検出
された研磨温度が所定温度に達した時点で研磨を停止す
る制御手段を設けたことを特徴とする研磨装置。3. A polishing apparatus comprising: a rotary support having polishing means arranged on the surface thereof; and a member-to-be-polished rotating-holding means for rotatingly holding a member-to-be-polished mounted on the polishing means. A polishing apparatus comprising: a polishing temperature detecting means provided at least in a part thereof or in the vicinity thereof, and a control means for stopping the polishing when the polishing temperature detected by the polishing temperature detecting means reaches a predetermined temperature.
線温度検出器であることを特徴とする請求項３記載の研
磨装置。4. The polishing apparatus according to claim 3, wherein the polishing temperature detecting means is a thermocouple or an infrared temperature detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21283694A JPH0878369A (en) | 1994-09-06 | 1994-09-06 | Polishing end point detecting method and its polishing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21283694A JPH0878369A (en) | 1994-09-06 | 1994-09-06 | Polishing end point detecting method and its polishing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0878369A true JPH0878369A (en) | 1996-03-22 |
Family
ID=16629160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21283694A Pending JPH0878369A (en) | 1994-09-06 | 1994-09-06 | Polishing end point detecting method and its polishing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0878369A (en) |
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|---|---|---|---|---|
| WO2002043922A1 (en) * | 2000-11-29 | 2002-06-06 | Psiloquest, Inc. | Crosslinked polyethylene polishing pad for chemical-mechnical polishing, polishing apparatus and polishing method |
| US6575823B1 (en) | 2001-03-06 | 2003-06-10 | Psiloquest Inc. | Polishing pad and method for in situ delivery of chemical mechanical polishing slurry modifiers and applications thereof |
| US6579604B2 (en) | 2000-11-29 | 2003-06-17 | Psiloquest Inc. | Method of altering and preserving the surface properties of a polishing pad and specific applications therefor |
| US6596388B1 (en) | 2000-11-29 | 2003-07-22 | Psiloquest | Method of introducing organic and inorganic grafted compounds throughout a thermoplastic polishing pad using a supercritical fluid and applications therefor |
| US6688956B1 (en) | 2000-11-29 | 2004-02-10 | Psiloquest Inc. | Substrate polishing device and method |
| US6764574B1 (en) | 2001-03-06 | 2004-07-20 | Psiloquest | Polishing pad composition and method of use |
| US6838169B2 (en) | 2002-09-11 | 2005-01-04 | Psiloquest, Inc. | Polishing pad resistant to delamination |
| US6846225B2 (en) | 2000-11-29 | 2005-01-25 | Psiloquest, Inc. | Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor |
| US7059946B1 (en) | 2000-11-29 | 2006-06-13 | Psiloquest Inc. | Compacted polishing pads for improved chemical mechanical polishing longevity |
| JP2010231854A (en) * | 2009-03-27 | 2010-10-14 | Hoya Corp | Method for manufacturing substrate for magnetic disk |
| WO2020225973A1 (en) * | 2019-05-09 | 2020-11-12 | 信越半導体株式会社 | Single surface polishing method |
-
1994
- 1994-09-06 JP JP21283694A patent/JPH0878369A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7059946B1 (en) | 2000-11-29 | 2006-06-13 | Psiloquest Inc. | Compacted polishing pads for improved chemical mechanical polishing longevity |
| US6579604B2 (en) | 2000-11-29 | 2003-06-17 | Psiloquest Inc. | Method of altering and preserving the surface properties of a polishing pad and specific applications therefor |
| US6596388B1 (en) | 2000-11-29 | 2003-07-22 | Psiloquest | Method of introducing organic and inorganic grafted compounds throughout a thermoplastic polishing pad using a supercritical fluid and applications therefor |
| US6688956B1 (en) | 2000-11-29 | 2004-02-10 | Psiloquest Inc. | Substrate polishing device and method |
| WO2002043922A1 (en) * | 2000-11-29 | 2002-06-06 | Psiloquest, Inc. | Crosslinked polyethylene polishing pad for chemical-mechnical polishing, polishing apparatus and polishing method |
| US6846225B2 (en) | 2000-11-29 | 2005-01-25 | Psiloquest, Inc. | Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor |
| US6575823B1 (en) | 2001-03-06 | 2003-06-10 | Psiloquest Inc. | Polishing pad and method for in situ delivery of chemical mechanical polishing slurry modifiers and applications thereof |
| US6764574B1 (en) | 2001-03-06 | 2004-07-20 | Psiloquest | Polishing pad composition and method of use |
| US6838169B2 (en) | 2002-09-11 | 2005-01-04 | Psiloquest, Inc. | Polishing pad resistant to delamination |
| JP2010231854A (en) * | 2009-03-27 | 2010-10-14 | Hoya Corp | Method for manufacturing substrate for magnetic disk |
| WO2020225973A1 (en) * | 2019-05-09 | 2020-11-12 | 信越半導体株式会社 | Single surface polishing method |
| JP2020188036A (en) * | 2019-05-09 | 2020-11-19 | 信越半導体株式会社 | Single-sided polishing method |
| CN113766994A (en) * | 2019-05-09 | 2021-12-07 | 信越半导体株式会社 | Single-side polishing method |
| CN113766994B (en) * | 2019-05-09 | 2024-03-08 | 信越半导体株式会社 | Single-sided polishing method |
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