JPH10135340A - Redundant circuit of semiconductor integrated circuit and method of testing blowing of redundant circuit fuse - Google Patents

Redundant circuit of semiconductor integrated circuit and method of testing blowing of redundant circuit fuse

Info

Publication number
JPH10135340A
JPH10135340A JP28946596A JP28946596A JPH10135340A JP H10135340 A JPH10135340 A JP H10135340A JP 28946596 A JP28946596 A JP 28946596A JP 28946596 A JP28946596 A JP 28946596A JP H10135340 A JPH10135340 A JP H10135340A
Authority
JP
Japan
Prior art keywords
fuse
wiring
redundant circuit
circuit
redundant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28946596A
Other languages
Japanese (ja)
Inventor
Atsushi Hagio
淳 荻尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Miyazaki Oki Electric Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Miyazaki Oki Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd, Miyazaki Oki Electric Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP28946596A priority Critical patent/JPH10135340A/en
Publication of JPH10135340A publication Critical patent/JPH10135340A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a redundant circuit of a semiconductor integrated circuit and method of testing blowing of a redundant circuit fuse whereby all redundant circuit fuses can be tested about their blow conditions, without increasing the test time and labor. SOLUTION: A redundant circuit has a fuse wiring 1 to be blown by a laser and wiring 2 for detecting the abnormal blow, running parallel to the fuse wiring 1 which is about 1μm width while a laser beam spot diameter is about 6μm and the space between the fuse wiring 1 and detecting wiring is about 40-5μm. When the fuse wiring is blown with a blow deviation, the laser beam spot is wide beyond necessity, or laser energy is high beyond necessity, the detecting wiring 2 is also broken to be electrically open between terminals 2a, 2b of the detecting wiring 2. Thus, the electrical connection of the detecting wiring 2 is measured to detect an abnormal blow of the fuse wiring.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体集積回路の
冗長回路および冗長回路ヒューズの切断検査方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a redundant circuit of a semiconductor integrated circuit and a method for inspecting a fuse of a redundant circuit.

【0002】[0002]

【従来の技術】従来、半導体集積回路には不良ビットと
電気的に置き換えられる冗長回路が設けられており、レ
ーザにより冗長回路ヒューズを切断することにより冗長
回路が作動する。また、冗長回路ヒューズの切断状態を
検査する場合、検査員は顕微鏡などを利用して目視で切
断ずれなどの切断異常を判断していた。
2. Description of the Related Art Conventionally, a semiconductor integrated circuit is provided with a redundant circuit that is electrically replaced with a defective bit, and the redundant circuit is activated by cutting a redundant circuit fuse with a laser. In addition, when inspecting the cutting state of the redundant circuit fuse, the inspector visually judges a cutting abnormality such as a cutting deviation using a microscope or the like.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記従
来のように冗長回路ヒューズの切断状態を目視で全数検
査する場合、検査時間が長くなり、しかも多数の人員が
必要であった。これに対し、冗長ヒューズの切断状態を
全数検査しない場合、正常な状態で冗長回路ヒューズが
切断されなくなるおそれがあるので、歩留まりや信頼性
に悪影響を及ぼす可能性があった。そこで、本発明は、
検査時間および人員を増加させることなく、簡単に冗長
回路ヒューズの切断状態を全数検査することができる半
導体集積回路の冗長回路および冗長回路ヒューズの切断
検査方法を提供することを目的とする。
However, when all of the redundant circuit fuses are visually inspected for disconnection status as in the prior art, the inspection time becomes long and a large number of personnel are required. On the other hand, if all the cut states of the redundant fuses are not inspected, the redundant circuit fuses may not be cut in a normal state, which may adversely affect the yield and reliability. Therefore, the present invention
It is an object of the present invention to provide a redundant circuit of a semiconductor integrated circuit and a method of inspecting the disconnection of the redundant circuit fuse, which can easily inspect all the disconnection states of the redundant circuit fuses without increasing the inspection time and personnel.

【0004】[0004]

【課題を解決するための手段】上記目的を達成するため
に、本発明の請求項1に係る半導体集積回路の冗長回路
は、レーザにより冗長回路ヒューズが切断されると作動
する半導体集積回路の冗長回路において、前記冗長回路
ヒューズの切断領域近傍に、電気的導通が測定される検
知用配線が形成されたことを特徴とする。請求項2に係
る半導体集積回路の冗長回路では、請求項1に係る半導
体集積回路の冗長回路において前記検知用配線が前記冗
長回路ヒューズに対して少なくとも片側に平行に形成さ
れたことを特徴とする。
According to a first aspect of the present invention, there is provided a redundant circuit for a semiconductor integrated circuit, which operates when a redundant circuit fuse is cut by a laser. In the circuit, a detection wiring for measuring electrical continuity is formed near a cut region of the redundant circuit fuse. In a redundant circuit of a semiconductor integrated circuit according to a second aspect, in the redundant circuit of the semiconductor integrated circuit according to the first aspect, the detection wiring is formed at least on one side in parallel with the redundant circuit fuse. .

【0005】請求項3に係る半導体集積回路の冗長回路
では、請求項1に係る半導体集積回路の冗長回路におい
て前記検知用配線が前記冗長回路ヒューズに直交するよ
うに前記切断領域の少なくとも片側に形成されたことを
特徴とする。請求項4に係る半導体集積回路の冗長回路
では、請求項1に係る半導体集積回路の冗長回路におい
て前記検知用配線が前記切断領域の周囲に形成されたこ
とを特徴とする。請求項5に係る冗長回路ヒューズの切
断検査方法は、半導体集積回路の冗長回路を作動させる
ためにレーザにより切断された冗長回路ヒューズの切断
状態を検査する冗長回路ヒューズの切断検査方法におい
て、前記冗長回路ヒューズの切断領域近傍に検知用配線
を形成しておき、該形成された検知用配線の端子間の電
気的導通を、前記冗長回路ヒューズの切断後に測定し、
該端子間が電気的に開放されている場合、前記冗長回路
ヒューズに切断異常が発生していると判断する。
According to a third aspect of the present invention, in the redundant circuit of the semiconductor integrated circuit according to the first aspect, the detection wiring is formed on at least one side of the cut region so as to be orthogonal to the redundant circuit fuse. It is characterized by having been done. According to a fourth aspect of the present invention, in the redundant circuit of the semiconductor integrated circuit according to the first aspect, the detection wiring is formed around the cutting region. A redundant circuit fuse disconnection inspection method according to claim 5, wherein the redundant circuit fuse disconnection inspection method for inspecting a disconnected state of a redundant circuit fuse cut by a laser in order to operate a redundant circuit of a semiconductor integrated circuit. A detection wiring is formed in the vicinity of the cut region of the circuit fuse, and electrical continuity between the terminals of the formed detection wiring is measured after the redundant circuit fuse is cut,
If the terminals are electrically open, it is determined that a disconnection abnormality has occurred in the redundant circuit fuse.

【0006】[0006]

【発明の実施の形態】本発明の半導体集積回路の冗長回
路および冗長回路ヒューズの切断検査方法の実施の形態
について説明する。図1は実施の形態における冗長回路
のヒューズ配線に平行に形成された検知用配線を示す図
である。冗長回路には、図示しないレーザにより切断さ
れるヒューズ配線1、および切断異常を検知するために
使用される検知用配線2がヒューズ配線1と平行に形成
されている。本実施の形態では、ヒューズ配線1の線幅
は約1μmであり、レーザビームスポットの直径は約6
μmであり、ヒューズ配線1と検知用配線2との間の距
離は約4〜5μmである。したがって、ヒューズ配線1
の切断がレーザにより切断領域8の範囲内で正常に行わ
れる場合、検知用配線2にかかることなく、ヒューズ配
線1だけを切断することができる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a redundant circuit of a semiconductor integrated circuit and a method for inspecting the disconnection of a redundant circuit fuse according to the present invention will be described. FIG. 1 is a diagram showing a detection wiring formed in parallel with a fuse wiring of a redundant circuit according to the embodiment. In the redundant circuit, a fuse wiring 1 cut by a laser (not shown) and a detection wiring 2 used to detect a cutting abnormality are formed in parallel with the fuse wiring 1. In the present embodiment, the line width of the fuse wiring 1 is about 1 μm, and the diameter of the laser beam spot is about 6 μm.
μm, and the distance between the fuse wiring 1 and the detection wiring 2 is about 4 to 5 μm. Therefore, fuse wiring 1
Is normally performed within the range of the cutting region 8 by the laser, only the fuse wiring 1 can be cut without involving the detection wiring 2.

【0007】図2は図1に示すヒューズ配線をレーザで
切断した際に切断ずれが発生した場合を示す図である。
同図右側に切断ずれが発生した場合、検知用配線2も同
時に切断されて検知用配線2の端子2a、2b間が電気
的に開放されるので、検知用配線2の電気的導通を測定
することによりヒューズ配線1の切断異常が検知され
る。図3は図1に示すヒューズ配線をレーザで切断した
際に切断ずれを起こすことなく検知用配線が切断される
場合を示す図である。レーザビームスポットが必要以上
に広い場合、あるいはレーザエネルギーが必要以上に強
い場合、切断中心位置にずれが生じていなくても検知用
配線2が切断されてしまう。この場合も、検知用配線2
の端子2a、2b間が電気的に開放されるので、検知用
配線2の電気的導通を測定することによりヒューズ配線
1の切断異常が検知される。
FIG. 2 is a diagram showing a case where a disconnection occurs when the fuse wiring shown in FIG. 1 is cut by a laser.
When a cutting shift occurs on the right side of the drawing, the detection wiring 2 is also cut at the same time and the terminals 2a and 2b of the detection wiring 2 are electrically opened, so that the electrical continuity of the detection wiring 2 is measured. Thus, the disconnection abnormality of the fuse wiring 1 is detected. FIG. 3 is a view showing a case where the detection wiring is cut without causing a cutting shift when the fuse wiring shown in FIG. 1 is cut by a laser. If the laser beam spot is wider than necessary, or if the laser energy is stronger than necessary, the detection wiring 2 will be cut even if there is no deviation in the cutting center position. Also in this case, the detection wiring 2
Between the terminals 2a and 2b is electrically opened, and the disconnection of the fuse wiring 1 is detected by measuring the electrical continuity of the detection wiring 2.

【0008】一方、レーザによりヒューズ配線1が正常
に切断された場合、検知用配線2は切断されず、検知用
配線2の端子2a、2b間は電気的に短絡されたままの
状態であるので、検知用配線2の電気的導通を測定する
ことによりヒューズ配線1の切断が正常に行われたこと
が検知される。このように、ヒューズ配線1に平行に形
成された検知用配線2の端子2a、2b間の電気的導通
を測定することにより、簡単にヒューズ配線1の切断状
態を検査できる。したがって、従来のように顕微鏡を使
って目視によりヒューズ配線の切断状態を検査しなくて
もよく、作業能率を効率化できる。特に、検知用配線の
端子間の導通を自動的に測定してヒューズ配線の切断状
態を検査するシステムを構築することが可能となり、検
査時間および人員を増加させることなく、簡単に冗長回
路ヒューズの切断状態を全数検査することができる。
On the other hand, when the fuse wiring 1 is normally cut by the laser, the detection wiring 2 is not cut, and the terminals 2a and 2b of the detection wiring 2 remain electrically short-circuited. By measuring the electrical continuity of the detection wiring 2, it is detected that the fuse wiring 1 has been cut normally. In this way, by measuring the electrical continuity between the terminals 2a and 2b of the detection wiring 2 formed in parallel with the fuse wiring 1, the cut state of the fuse wiring 1 can be easily inspected. Therefore, it is not necessary to visually inspect the cut state of the fuse wiring using a microscope as in the conventional case, and the work efficiency can be improved. In particular, it is possible to construct a system for automatically measuring the continuity between the terminals of the detection wiring and inspecting the disconnection state of the fuse wiring, thereby easily adding a redundant circuit fuse without increasing the inspection time and personnel. The entire cutting state can be inspected.

【0009】尚、検知用配線2をヒューズ配線1と同一
の工程で形成することも可能であり、この場合、検知用
配線2を簡単に形成できる。 [他の実施の形態]図4はヒューズ配線に対して図1と
反対側に平行に形成された検知用配線を示す図である。
検知用配線12をヒューズ配線11の同図左側に形成し
た場合、レーザによるヒューズ配線11の切断後に検知
用配線12の電気的導通を測定することにより、切断異
常、特に同図左側への切断ずれを検知できる。図5はヒ
ューズ配線に対して両側にそれぞれ平行に形成された検
知用配線を示す図である。この場合、検知用配線22の
端子22a、22b間の電気的導通を測定すること、お
よび検知用配線23の端子23a、23b間の電気的導
通を測定することにより、ヒューズ配線21の切断異
常、特に左右の切断ずれを確実に検知できる。
Incidentally, the detection wiring 2 can be formed in the same step as that of the fuse wiring 1. In this case, the detection wiring 2 can be easily formed. [Other Embodiments] FIG. 4 is a diagram showing a detection wiring formed in parallel with the fuse wiring on the side opposite to FIG.
If the detection wiring 12 is formed on the left side of the fuse wiring 11 in the figure, the disconnection of the detection wiring 12 is measured by measuring the electrical continuity of the detection wiring 12 after the fuse wiring 11 is cut by the laser. Can be detected. FIG. 5 is a diagram showing detection wires formed in parallel on both sides with respect to the fuse wires. In this case, by measuring the electrical continuity between the terminals 22a and 22b of the detection wiring 22 and measuring the electrical continuity between the terminals 23a and 23b of the detection wiring 23, the disconnection of the fuse wiring 21 can be prevented. In particular, left and right cutting deviations can be reliably detected.

【0010】図6はヒューズ配線に直交するように切断
領域の上部に形成された検知用配線を示す図である。検
知用配線62の端子62a、62b間の電気的導通を測
定することによりヒューズ配線の切断異常、特に切断領
域68の上側への切断ずれを検知できる。図7はヒュー
ズ配線に直交するように切断領域の下部に形成された検
知用配線を示す図である。検知用配線72の端子72
a、72b間の電気的導通を測定することによりヒュー
ズ配線の切断異常、特に切断領域78の下側への切断ず
れを検知できる。
FIG. 6 is a diagram showing a detection wiring formed above the cutting region so as to be orthogonal to the fuse wiring. By measuring the electrical continuity between the terminals 62 a and 62 b of the detection wiring 62, it is possible to detect a disconnection abnormality of the fuse wiring, particularly, a disconnection of the fuse wiring above the cutting region 68. FIG. 7 is a diagram showing a detection wiring formed below the cutting region so as to be orthogonal to the fuse wiring. Terminal 72 of detection wiring 72
By measuring the electrical continuity between a and 72b, it is possible to detect a disconnection abnormality of the fuse wiring, particularly a disconnection of the disconnection to the lower side of the disconnection region 78.

【0011】図8はヒューズ配線に直交するように切断
領域の上部および下部に形成された検知用配線を示す図
である。検知用配線82の端子82a、82b間の電気
的導通を測定すること、および検知用配線83の端子8
3a、83b間の電気的導通を測定することにより、ヒ
ューズ配線81の切断異常、特に切断領域88の上側お
よび下側への切断ずれを検知できる。尚、図6、図7、
図8に示した検知用配線をヒューズ配線と一体に形成す
ることも可能であり、この場合、検知用配線を簡単に形
成できる。図9は切断領域の内側周囲に形成された検知
用配線を示す図である。切断領域98の内側に沿って略
四角形に連続的に形成された検知用配線92の端子92
a、92b間の電気的導通を測定することにより、ヒュ
ーズ配線の切断異常91を検知できる。特に、どの方向
に切断ずれが発生しても確実に切断異常を検知できる。
FIG. 8 is a diagram showing detection wirings formed above and below the cutting region so as to be orthogonal to the fuse wirings. Measuring the electrical continuity between the terminals 82a and 82b of the detection wiring 82;
By measuring the electrical continuity between 3a and 83b, it is possible to detect a disconnection abnormality of the fuse wiring 81, particularly a disconnection of the disconnection to the upper side and the lower side of the cut region 88. 6 and 7,
The detection wiring shown in FIG. 8 can be formed integrally with the fuse wiring. In this case, the detection wiring can be easily formed. FIG. 9 is a diagram showing the detection wiring formed around the inside of the cutting area. Terminals 92 of the detection wiring 92 continuously formed in a substantially rectangular shape along the inside of the cutting region 98
By measuring the electrical continuity between a and 92b, the disconnection abnormality 91 of the fuse wiring can be detected. In particular, a cutting abnormality can be reliably detected regardless of the direction in which the cutting deviation occurs.

【0012】図10は切断領域の内側周囲に形成された
複数の検知用配線を示す図である。検知用配線102、
103、104、105を切断領域108の上部、下
部、左部、右部に形成しておき、各端子間の電気的導通
を測定することによりヒューズ配線101の切断異常を
検知できるともに、切断ずれが発生した場合にその方向
を特定することが可能である。尚各図によって説明した
上記各実施形態においては、通常切断領域がパッシベー
ション膜(図1における絶縁膜3)に覆われておらず、
又検知用配線とヒューズ配線は絶縁膜により互いに絶縁
されている。
FIG. 10 is a diagram showing a plurality of detection wirings formed around the inside of the cutting area. Detection wiring 102,
103, 104, and 105 are formed at the upper, lower, left, and right portions of the cutting region 108, and by measuring the electrical continuity between the terminals, it is possible to detect the cutting abnormality of the fuse wiring 101 and to detect the cutting displacement. It is possible to specify the direction when the error occurs. In each of the embodiments described with reference to the drawings, the normal cutting region is not covered with the passivation film (the insulating film 3 in FIG. 1).
The detection wiring and the fuse wiring are insulated from each other by an insulating film.

【0013】[0013]

【発明の効果】本発明の請求項1に係る半導体集積回路
の冗長回路によれば、レーザにより冗長回路ヒューズが
切断されると作動する半導体集積回路の冗長回路におい
て、前記冗長回路ヒューズの切断領域近傍に、電気的導
通が測定される検知用配線が形成されたので、レーザに
より冗長回路ヒューズを切断した後、検知用配線の電気
的導通を測定することにより簡単に冗長回路ヒューズの
切断異常を検知できる。したがって、従来のように顕微
鏡を使って目視により冗長回路ヒューズの切断異常を検
知しなくてもよく、作業能率を効率化できる。特に、検
知用配線の電気的導通を自動的に測定して冗長回路ヒュ
ーズの切断状態を検査するシステムを構築することが可
能となり、検査時間および人員を増加させることなく、
簡単に冗長回路ヒューズの切断状態を全数検査すること
ができる。
According to the redundant circuit of the semiconductor integrated circuit according to the first aspect of the present invention, in the redundant circuit of the semiconductor integrated circuit which operates when the redundant circuit fuse is cut by the laser, the cut region of the redundant circuit fuse is provided. The detection wiring for measuring the electrical continuity was formed in the vicinity, so after cutting the redundant circuit fuse with the laser, the disconnection of the redundant circuit fuse could be easily detected by measuring the electrical continuity of the detection wiring. Can be detected. Therefore, it is not necessary to visually detect an abnormal disconnection of the redundant circuit fuse using a microscope as in the related art, and the work efficiency can be improved. In particular, it is possible to construct a system for automatically measuring the electrical continuity of the detection wiring and inspecting the disconnection state of the redundant circuit fuse, without increasing the inspection time and personnel.
It is possible to easily inspect all cuts of the redundant circuit fuses.

【0014】請求項2に係る半導体集積回路の冗長回路
によれば、前記検知用配線が前記冗長回路ヒューズに対
して少なくとも片側に平行に形成されたので、冗長回路
ヒューズに対して平行に発生する切断ずれを確実に検知
できる。また、検知用配線を冗長回路ヒューズと同一の
工程で形成することも可能である。請求項3に係る半導
体集積回路の冗長回路によれば、前記検知用配線が前記
冗長回路ヒューズに直交するように前記切断領域の少な
くとも片側に形成されたので、冗長回路ヒューズに対し
て直交する側に発生する切断ずれを確実に検知できる。
また、検知用配線を冗長回路ヒューズと一体に形成する
ことが可能となり、検知用配線を簡単に形成できる。
According to the redundant circuit of the semiconductor integrated circuit according to the second aspect, since the detection wiring is formed at least on one side in parallel with the redundant circuit fuse, it is generated in parallel with the redundant circuit fuse. Cutting displacement can be reliably detected. Further, the detection wiring can be formed in the same step as the redundant circuit fuse. According to the redundant circuit of the semiconductor integrated circuit according to claim 3, since the detection wiring is formed on at least one side of the cutting region so as to be orthogonal to the redundant circuit fuse, the side orthogonal to the redundant circuit fuse is provided. Can be detected reliably.
Further, the detection wiring can be formed integrally with the redundant circuit fuse, and the detection wiring can be easily formed.

【0015】請求項4に係る半導体集積回路の冗長回路
によれば、前記検知用配線が前記切断領域の周囲に形成
されたので、どの方向に切断ずれが発生しても確実に切
断異常を検知できる。請求項5に係る冗長回路ヒューズ
の切断検査方法によれば、半導体集積回路の冗長回路を
作動させるためにレーザにより切断された冗長回路ヒュ
ーズの切断状態を検査する冗長回路ヒューズの切断検査
方法において、前記冗長回路ヒューズの切断領域近傍に
検知用配線を形成しておき、該形成された検知用配線の
端子間の電気的導通を、前記冗長回路ヒューズの切断後
に測定し、該端子間が電気的に開放されている場合、前
記冗長回路ヒューズに切断異常が発生していると判断す
るので、レーザにより冗長回路ヒューズを切断した後、
検知用配線の電気的導通を測定することにより簡単に冗
長回路ヒューズの切断異常を検知できる。
According to the redundant circuit of the semiconductor integrated circuit according to the fourth aspect, since the detection wiring is formed around the cutting region, the cutting abnormality can be reliably detected regardless of the cutting displacement in any direction. it can. According to the method for inspecting the disconnection of a redundant circuit fuse according to claim 5, in the method of inspecting the disconnection of a redundant circuit fuse cut by a laser for operating a redundant circuit of a semiconductor integrated circuit, A detection wiring is formed in the vicinity of the cut region of the redundant circuit fuse, and electrical continuity between terminals of the formed detection wiring is measured after the redundant circuit fuse is cut. If it is opened to, since it is determined that a disconnection abnormality has occurred in the redundant circuit fuse, after cutting the redundant circuit fuse by laser,
By measuring the electrical continuity of the detection wiring, the disconnection abnormality of the redundant circuit fuse can be easily detected.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施の形態における冗長回路のヒューズ配線に
平行に形成された検知用配線を示す図である。
FIG. 1 is a diagram showing a detection wiring formed in parallel with a fuse wiring of a redundant circuit in an embodiment.

【図2】図1に示すヒューズ配線をレーザで切断した際
に切断ずれが発生した場合を示す図である。
FIG. 2 is a diagram showing a case where a disconnection occurs when the fuse wiring shown in FIG. 1 is cut by a laser.

【図3】図1に示すヒューズ配線をレーザで切断した際
に切断ずれを起こすことなく検知用配線が切断される場
合を示す図である。
FIG. 3 is a diagram showing a case where the detection wiring is cut without causing a cutting shift when the fuse wiring shown in FIG. 1 is cut by a laser.

【図4】ヒューズ配線に対して図1と反対側に平行に形
成された検知用配線を示す図である。
FIG. 4 is a diagram showing a detection wiring formed in parallel with the fuse wiring on the opposite side of FIG. 1;

【図5】ヒューズ配線に対して両側にそれぞれ平行に形
成された検知用配線を示す図である。
FIG. 5 is a diagram showing detection wires formed in parallel on both sides with respect to the fuse wires.

【図6】ヒューズ配線に直交するように切断領域の上部
に形成された検知用配線を示す図である。
FIG. 6 is a diagram showing a detection wiring formed above a cutting region so as to be orthogonal to a fuse wiring.

【図7】ヒューズ配線に直交するように切断領域の下部
に形成された検知用配線を示す図である。
FIG. 7 is a diagram showing a detection wiring formed below a cutting region so as to be orthogonal to the fuse wiring.

【図8】ヒューズ配線に直交するように切断領域の上部
および下部に形成された検知用配線を示す図である。
FIG. 8 is a diagram showing detection wirings formed above and below a cutting region so as to be orthogonal to fuse wirings.

【図9】切断領域の内側周囲に形成された検知用配線を
示す図である。
FIG. 9 is a diagram showing a detection wiring formed around the inside of a cutting area.

【図10】切断領域の内側周囲に形成された複数の検知
用配線を示す図である。
FIG. 10 is a diagram showing a plurality of detection wires formed around the inside of a cutting region.

【符号の説明】[Explanation of symbols]

1,11,21,61,71,81,91,101 ヒ
ューズ配線 2,12,22,23,62,72,82,83,9
2,102,103,104,105 検知用配線 8,68,78,88,98,108 切断領域
1, 11, 21, 61, 71, 81, 91, 101 Fuse wiring 2, 12, 22, 23, 62, 72, 82, 83, 9
2,102,103,104,105 Wiring for detection 8,68,78,88,98,108 Cutting area

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 レーザにより冗長回路ヒューズが切断さ
れると作動する半導体集積回路の冗長回路において、 前記冗長回路ヒューズの切断領域近傍に、電気的導通が
測定される検知用配線が形成されたことを特徴とする半
導体集積回路の冗長回路。
1. A redundant circuit of a semiconductor integrated circuit which operates when a redundant circuit fuse is cut by a laser, wherein a detection wiring for measuring electrical continuity is formed near a cut region of the redundant circuit fuse. A redundant circuit for a semiconductor integrated circuit, comprising:
【請求項2】 前記検知用配線が前記冗長回路ヒューズ
に対して少なくとも片側に平行に形成されたことを特徴
とする請求項1記載の半導体集積回路の冗長回路。
2. The redundant circuit of a semiconductor integrated circuit according to claim 1, wherein said detection wiring is formed at least on one side in parallel with said redundant circuit fuse.
【請求項3】 前記検知用配線が前記冗長回路ヒューズ
に直交するように前記切断領域の少なくとも片側に形成
されたことを特徴とする請求項1記載の半導体集積回路
の冗長回路。
3. The redundant circuit of a semiconductor integrated circuit according to claim 1, wherein said detection wiring is formed on at least one side of said cut region so as to be orthogonal to said redundant circuit fuse.
【請求項4】 前記検知用配線が前記切断領域の周囲に
形成されたことを特徴とする請求項1記載の半導体集積
回路の冗長回路。
4. The redundant circuit of a semiconductor integrated circuit according to claim 1, wherein said detection wiring is formed around said cutting region.
【請求項5】 半導体集積回路の冗長回路を作動させる
ためにレーザにより切断された冗長回路ヒューズの切断
状態を検査する冗長回路ヒューズの切断検査方法におい
て、 前記冗長回路ヒューズの切断領域近傍に検知用配線を形
成しておき、 該形成された検知用配線の端子間の電気的導通を、前記
冗長回路ヒューズの切断後に測定し、 該端子間が電気的に開放されている場合、前記冗長回路
ヒューズに切断異常が発生していると判断する冗長回路
ヒューズの切断検査方法。
5. A redundant circuit fuse disconnection inspection method for inspecting a disconnected state of a redundant circuit fuse cut by a laser for operating a redundant circuit of a semiconductor integrated circuit, comprising: Wiring is formed, and electrical continuity between terminals of the formed detection wiring is measured after cutting the redundant circuit fuse. If the terminals are electrically open, the redundant circuit fuse is For inspecting the disconnection of a redundant circuit fuse for determining that a disconnection abnormality has occurred in a fuse.
JP28946596A 1996-10-31 1996-10-31 Redundant circuit of semiconductor integrated circuit and method of testing blowing of redundant circuit fuse Pending JPH10135340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28946596A JPH10135340A (en) 1996-10-31 1996-10-31 Redundant circuit of semiconductor integrated circuit and method of testing blowing of redundant circuit fuse

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28946596A JPH10135340A (en) 1996-10-31 1996-10-31 Redundant circuit of semiconductor integrated circuit and method of testing blowing of redundant circuit fuse

Publications (1)

Publication Number Publication Date
JPH10135340A true JPH10135340A (en) 1998-05-22

Family

ID=17743631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28946596A Pending JPH10135340A (en) 1996-10-31 1996-10-31 Redundant circuit of semiconductor integrated circuit and method of testing blowing of redundant circuit fuse

Country Status (1)

Country Link
JP (1) JPH10135340A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100791340B1 (en) 2006-09-04 2008-01-07 삼성전자주식회사 Semiconductor device and method for fabricating the same
KR100809708B1 (en) 2006-10-17 2008-03-06 삼성전자주식회사 Laser alignment monitoring fuse structure and semiconductor device having the same and laser alignment monitoring circuit
CN104282659A (en) * 2013-07-03 2015-01-14 中芯国际集成电路制造(上海)有限公司 Testing structure, testing method and laser cutting method of corresponding wafer and fuses

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100791340B1 (en) 2006-09-04 2008-01-07 삼성전자주식회사 Semiconductor device and method for fabricating the same
US7763887B2 (en) 2006-09-04 2010-07-27 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US8071469B2 (en) 2006-09-04 2011-12-06 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
KR100809708B1 (en) 2006-10-17 2008-03-06 삼성전자주식회사 Laser alignment monitoring fuse structure and semiconductor device having the same and laser alignment monitoring circuit
CN104282659A (en) * 2013-07-03 2015-01-14 中芯国际集成电路制造(上海)有限公司 Testing structure, testing method and laser cutting method of corresponding wafer and fuses

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