JPH10135281A - Ic package - Google Patents

Ic package

Info

Publication number
JPH10135281A
JPH10135281A JP8303752A JP30375296A JPH10135281A JP H10135281 A JPH10135281 A JP H10135281A JP 8303752 A JP8303752 A JP 8303752A JP 30375296 A JP30375296 A JP 30375296A JP H10135281 A JPH10135281 A JP H10135281A
Authority
JP
Japan
Prior art keywords
package
electrode pad
element forming
forming surface
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8303752A
Other languages
Japanese (ja)
Other versions
JP3485424B2 (en
Inventor
Tetsuo Takahashi
哲男 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP30375296A priority Critical patent/JP3485424B2/en
Publication of JPH10135281A publication Critical patent/JPH10135281A/en
Application granted granted Critical
Publication of JP3485424B2 publication Critical patent/JP3485424B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To perform an electric test of a CSP(chip size package) IC package while protecting the mounting electric contact against damage. SOLUTION: An IC package having solder bumps 23 rearranged on the element forming surface of an IC chip 1 using a bump rearranging board 21 is turned, on the side face thereof, by means of an insulating frame body 11 through which conductive measuring pins 12 are penetrating. First electrode pads 2 arranged along the fringe part of the element forming surface while being connected electrically with solder bumps 23 through second bonding wires 4 are also connected with the measuring pins 12 through first bonding wires 3 and third electrode pads. Electric measurement is made by touching a measuring probe to the exposed end face of a measuring pin 13 from the rear side 11 of the IC package. Since the solder bumps 23 do not touch the measuring means at all, they are protected against abrasion, damage an falling.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、パッケージ寸法を
ICチップ本体と同等としながら高密度実装や多ピン化
に対応できるCSP(チップ・サイズ・パッケージ)型
のICパッケージに関し、特に実装用の電気接点の損傷
を防止しながら電気検査を行うことを可能とする新規な
構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CSP (chip size package) type IC package capable of supporting high-density mounting and increasing the number of pins while maintaining the same package size as an IC chip body. The present invention relates to a novel structure that enables electrical inspection while preventing damage to contacts.

【0002】[0002]

【従来の技術】電子機器の製造分野では、小型・軽量
化、低コスト化、短納期化の要望がますます高まってお
り、その心臓部を構成するICパッケージについても同
様の要求が切迫したものとなっている。現状のICパッ
ケージの主流はQFP(Quad Flat Pack- age)と呼ばれ
る、矩形のパッケージの四辺に多数の外部リードを引き
出したものである。しかし、リード・ピッチが0.4m
mから0.3mmへ移行されつつある折、接続品質の低
下が問題となっており、これ以上の小型化や多ピン化に
対応することは必ずしも容易ではない。
2. Description of the Related Art In the field of manufacturing electronic devices, there is an increasing demand for smaller, lighter, lower cost, and shorter delivery times, and similar demands are imminent for IC packages that form the heart of such devices. It has become. The current mainstream of IC packages is called QFP (Quad Flat Package), in which a number of external leads are drawn out on four sides of a rectangular package. However, the lead pitch is 0.4m
As the transition from m to 0.3 mm has occurred, the connection quality has become a problem, and it is not always easy to cope with further miniaturization and increase in the number of pins.

【0003】この問題に対応できるICパッケージとし
て、CSP(チップ・スケール・パッケージ)の研究・
開発が活発化している。CSPにはまだ統一された規格
が存在しておらず、各社各様のものが提案されている
が、その多くに共通している考え方は、(a)ICチッ
プの素子形成面が実装基板(マザーボード)に対面する
ごとく実装される、いわゆるフェイスダウン・ボンディ
ングであること、(b)ICチップの素子形成面にすべ
ての電極パッドが形成されており、この電極パッドの配
列パターンが何らかの仲介層(インタポーザ)を介して
規則的な電気接点の配列パターンに変換されており、こ
の電気接点が基板上の配線パターンに実際に接続される
実装用の接点となっていること、である。上記仲介層と
してはセラミクス基板やポリイミド・フィルムが使用さ
れる。また、上記電気接点は格子状にパターニングされ
た電極や格子状に配列されたバンプで構成される。特
に、後者のバンプを配列させる方式はBGA(ボール・
グリッド・アレイ)と称されている。
Research and development of CSP (Chip Scale Package) as an IC package that can solve this problem
Development is active. CSP does not yet have a unified standard, and various companies have been proposed. However, the common idea is that (a) the element formation surface of an IC chip is mounted on a mounting board ( (B) all electrode pads are formed on the element forming surface of the IC chip, and the arrangement pattern of the electrode pads is some kind of intermediate layer ( Through an interposer), which is converted into a regular arrangement pattern of electrical contacts, and this electrical contact is a mounting contact that is actually connected to a wiring pattern on the substrate. As the mediation layer, a ceramics substrate or a polyimide film is used. Further, the electric contact is constituted by electrodes patterned in a grid pattern and bumps arranged in a grid pattern. In particular, the latter method of arranging bumps is a BGA (ball
Grid array).

【0004】[0004]

【発明が解決しようとする課題】ところで、上述のよう
にICパッケージが多ピン化され、ピン間隔も微細化さ
れるに伴い、電気検査に際して電気検査用プローブを微
細な検査用端子に正確に、しかも双方に損傷を与えない
ように接触させることが困難となりつつある。
As described above, as the number of pins of the IC package is increased and the pin spacing is also reduced, the electrical inspection probe is accurately connected to the fine inspection terminal at the time of electrical inspection. Moreover, it is becoming more difficult to make contact with both without damaging them.

【0005】リードフレームを使用する従来型のパッケ
ージについては、この問題を解決するための構造上の工
夫が幾つか提案されている。たとえば、特開平5−25
9367号公報には、各リードに接続される電気検査用
ピンをフラット型ICパッケージの上面に露出させ、こ
のピンにプローブを接触させて検査を行えるようになさ
れた構造が開示されている。また、特開平6−2043
58号公報には、モールド内部のリードフレーム上に検
査用接触端を設け、かつこの検査用接触端を露出させる
開口をモールドの上面に設けることにより、該開口から
プローブ・ピンを挿入して検査を行えるようになされた
ICパッケージの構造が開示されている。上述の各広報
に記載される技術は、いずれもリードフレームの変形や
プローブとの接触不良を防止することを目的として提案
されたものである。ここで、プローブの接触相手となる
部材はリードまたはこれに接続されるピンであって、し
かもこれらの部材は露出部を除いて全面的にモールド樹
脂に固定された状態となっている。
[0005] For a conventional package using a lead frame, several structural ideas have been proposed to solve this problem. For example, JP-A-5-25
No. 9367 discloses a structure in which an electrical inspection pin connected to each lead is exposed on an upper surface of a flat type IC package, and a probe is brought into contact with the pin to perform an inspection. Also, Japanese Patent Application Laid-Open No. 6-2043
No. 58 discloses an inspection contact end provided on a lead frame inside a mold, and an opening for exposing the inspection contact end is provided on the upper surface of the mold. A structure of an IC package capable of performing the following is disclosed. The techniques described in each of the above publications have been proposed for the purpose of preventing deformation of the lead frame and poor contact with the probe. Here, the member to be contacted by the probe is a lead or a pin connected thereto, and these members are entirely fixed to the mold resin except for the exposed portions.

【0006】これに対し、CSP型のICパッケージに
ついて電気検査を行うためには、全面モールドされてい
ないICチップの素子形成面側に配列された電気接点に
プローブを配列させなければならない。特に、BGA型
のICパッケージのように電気接点がバンプである場
合、バンプ自体が近年ますます微細化され、下地との接
着強度が確保しにくくなっていることから、検査時に加
わる外圧によりバンプの磨耗,変形,脱落等の欠陥が生
じやすくなっている。これらの欠陥が生じたICパッケ
ージは、実装段階で基板取り付け不良の原因となり、製
造上不利益である。そこで本発明は、CSP型のICパ
ッケージについても、実装基板との接続に使用される電
気接点に欠陥を生ずることなく、信頼性の高い電気検査
を可能とするICパッケージを提供することを目的とす
る。
On the other hand, in order to conduct an electrical test on a CSP type IC package, it is necessary to arrange probes on electric contacts arranged on the element forming surface side of an IC chip that is not molded over the entire surface. In particular, when the electrical contact is a bump, such as a BGA-type IC package, the bump itself is increasingly miniaturized in recent years, and it is difficult to secure the adhesive strength to the base. Defects such as abrasion, deformation, and dropping are likely to occur. The IC package in which these defects occur causes a substrate mounting failure at the mounting stage, and is disadvantageous in manufacturing. Accordingly, an object of the present invention is to provide a CSP type IC package capable of performing a highly reliable electrical inspection without causing a defect in an electrical contact used for connection with a mounting substrate. I do.

【0007】[0007]

【課題を解決するための手段】本発明のICパッケージ
は、電気接点が再配列されたICチップの素子形成面と
は反対側の方向から電気検査用プローブを接触させるこ
とができるように、まず素子形成面に該電気接点と電気
的に接続する第1電極パッドをICチップの辺に沿って
配し、該ICチップを周回する枠体を高さ方向に貫通す
る形で該第1電極パッドに接続する導体を枠体の裏面
(ただし、実装時にはこちらが上面となる。)へ引き出
し、該裏面における導体の露出部を電気検査用プローブ
の接点とすることにより、上述の目的を達成しようとす
るものである。上記導体の役割を果たすものは、枠体に
埋め込まれた導電性の測定用ピンであり、この測定ピン
を対応する第1電極パッドと第1接続手段を用いて個々
に接続しておけば良い。
SUMMARY OF THE INVENTION An IC package according to the present invention is designed so that an electrical test probe can be contacted from a direction opposite to an element forming surface of an IC chip in which electrical contacts are rearranged. A first electrode pad electrically connected to the electrical contact is disposed on the element forming surface along a side of the IC chip, and the first electrode pad is formed so as to penetrate a frame surrounding the IC chip in a height direction. The above-mentioned object is achieved by drawing a conductor to be connected to the frame to the back surface of the frame (however, this is an upper surface during mounting) and making the exposed portion of the conductor on the back surface a contact point of the electrical inspection probe. Is what you do. What plays the role of the conductor is a conductive measurement pin embedded in the frame, and the measurement pin may be individually connected to the corresponding first electrode pad using the first connection means. .

【0008】[0008]

【発明の実施の形態】本発明は、ICチップの素子形成
面上の電極パッドの配列パターンが、何らかの仲介層を
用いて別の電気接点の配列パターンに変換されているよ
うなICパッケージを対象としている。ここで、上記仲
介層は、セラミクス基板,エポキシ樹脂基板,ポリイミ
ド・フィルム等、公知の絶縁材料を用いて構成すること
ができる。上記第1電極パッドと前記電気接点との電気
的接続は、仲介層の内部構造を介して行うことも可能で
あるが、該仲介層の辺部に該電気接点と電気的に接続さ
れる第2電極パッドを配しておき、この第2電極パッド
と上記第1電極パッドとを第2接続手段を用いて電気的
に接続することが簡便である。なお、上記第1接続手段
と第2接続手段としては、ボンディング・ワイヤを用い
ることが簡便である。なお、これら第1接続手段と第2
接続手段には、ボンディング・ワイヤのみならず、該ワ
イヤとの密着性や接触抵抗を考慮して使用される下地金
属膜も含めるものとする。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is directed to an IC package in which an arrangement pattern of electrode pads on an element forming surface of an IC chip is converted to an arrangement pattern of another electric contact by using an intermediate layer. And Here, the mediation layer can be formed using a known insulating material such as a ceramics substrate, an epoxy resin substrate, or a polyimide film. The electrical connection between the first electrode pad and the electrical contact can be made through an internal structure of the mediating layer, but the electrical connection between the electrical contact and the side of the mediating layer can be made. It is convenient to arrange two electrode pads and to electrically connect the second electrode pads to the first electrode pads using the second connection means. It is convenient to use a bonding wire as the first connection means and the second connection means. Note that the first connection means and the second connection means
The connecting means includes not only a bonding wire but also a base metal film used in consideration of adhesion and contact resistance with the wire.

【0009】本発明は、あらゆる種類のCSPに適用し
て好適であるが、特に電気接点がハンダその他の金属か
らなるバンプで構成されているBGA型のICパッケー
ジに適用すれば、電気検査時のバンプの磨耗,損傷,脱
落を効果的に防止することができる。
The present invention is suitable for application to all kinds of CSPs. In particular, if the present invention is applied to a BGA type IC package in which electric contacts are formed of bumps made of solder or other metal, the present invention can be applied to an electric test. It is possible to effectively prevent the abrasion, damage and dropping of the bump.

【0010】次に、本発明の具体的な実施の形態とし
て、BGA型のICパッケージの一構成例について図1
および図2を参照しながら説明する。図1は、正方形の
BGA型ICパッケージの一部を破断し、かつ素子形成
面側Iを上向きに示した図であり、図2は図1のA−A
線断面図である。このICパッケージにおいて、ICチ
ップ1は四辺を枠体11で周回されている。ICチップ
1の素子形成面上には図示されない電極パッドが多数形
成されているが、その電極パッドの配列パターンを十分
な実装精度が得られる程度であってかつ規則的なハンダ
・バンプ23の配列パターンに変換している仲介層がバ
ンプ再配列基板21である。バンプ再配列基板21は、
たとえばガラス繊維強化エポキシ樹脂を用いて形成され
ている。
Next, as a specific embodiment of the present invention, a configuration example of a BGA type IC package will be described with reference to FIG.
This will be described with reference to FIG. FIG. 1 is a diagram in which a part of a square BGA type IC package is cut away and the element forming surface side I is directed upward, and FIG.
It is a line sectional view. In this IC package, the IC chip 1 is wound around four sides by a frame 11. Although a large number of electrode pads (not shown) are formed on the element forming surface of the IC chip 1, the arrangement pattern of the electrode pads is such that sufficient mounting accuracy can be obtained and the arrangement of the solder bumps 23 is regular. The intermediate layer that is converted into the pattern is the bump rearranged substrate 21. The bump rearrangement substrate 21
For example, it is formed using a glass fiber reinforced epoxy resin.

【0011】前記ICチップ1の四辺に沿った領域に
は、第1電極パッド2が配されており、また、バンプ再
配列基板21の四辺に沿った領域にも第2電極パッド2
2が配されている。第2電極パッド22は、内部配線2
4により個々のハンダ・バンプ23と電気的に接続され
ている。これら第1電極パッド2と第2電極パッド22
は、共にたとえばAl系材料膜を用いて構成され、かつ
同数設けられている。これらの電極パッドは、互いに対
応するパッド同士が各々に第2ボンディング・ワイヤ4
を用いて素子形成面側Iで接続されている。この第2ボ
ンディング・ワイヤ4は、AuまたはAl系材料を用い
て形成される。
A first electrode pad 2 is arranged in a region along four sides of the IC chip 1, and a second electrode pad 2 is also formed in a region along four sides of the bump rearrangement substrate 21.
2 are arranged. The second electrode pad 22 is connected to the internal wiring 2.
4 are electrically connected to the individual solder bumps 23. The first electrode pad 2 and the second electrode pad 22
Are formed using, for example, an Al-based material film, and are provided in the same number. These electrode pads are arranged such that the pads corresponding to each other are each provided with a second bonding wire 4.
Are connected on the element forming surface side I. This second bonding wire 4 is formed using Au or an Al-based material.

【0012】上記第1電極パッド2と第2電極パッド2
2はいずれも素子形成面側Iに形成されている電気測定
用の端子であるが、これらの端子に対して裏側IIからの
電気検査用プローブのアクセスを可能とする部材が、枠
体11とその中に埋め込まれている測定用ピン12であ
る。上記枠体11は、幅0.1mm,高さ0.4mmの
エポキシ樹脂よりなる部材である。上記高さは、ICチ
ップ1の高さよりもやや高いが、これは後述のごとくI
Cチップ1の周辺部についてのみ樹脂封止を行う際に、
封止層5の保持力を高めるためである。
The first electrode pad 2 and the second electrode pad 2
Numeral 2 denotes terminals for electric measurement formed on the element forming surface side I, and a member enabling access of the electric inspection probe from the back side II to these terminals is a frame 11 and a frame. The measuring pin 12 embedded therein. The frame 11 is a member made of epoxy resin having a width of 0.1 mm and a height of 0.4 mm. The height is slightly higher than the height of the IC chip 1, but this is
When performing resin sealing only on the peripheral portion of the C chip 1,
This is for increasing the holding power of the sealing layer 5.

【0013】上記枠体11には、その高さ方向に1辺
0.05mmのAl系もしくはCu系材料よりなる測定
用ピン12が貫通されている。この測定用ピン12は、
裏側IIではその露出面をそのまま電気測定用プローブの
接点とすることができるが、素子形成面側Iでは後述す
るようにワイヤ・ボンディングを行うため、ボンディン
グ・ワイヤの端部の金属ボールとの密着性と接触抵抗が
問題となる。ここでは、素子形成面側Iの測定用ピン1
2の端面に、Auからなる第3電極パッド13を形成し
た。
A measuring pin 12 made of an Al-based or Cu-based material having a side of 0.05 mm extends through the frame 11 in the height direction. This measuring pin 12
On the back side II, the exposed surface can be used as it is as a contact point of the probe for electric measurement, but on the element forming surface I, since wire bonding is performed as described later, the end of the bonding wire is in close contact with the metal ball. Properties and contact resistance are problems. Here, the measuring pin 1 on the element forming surface side I
The third electrode pad 13 made of Au was formed on the end face of No. 2.

【0014】なお、上述のように枠体11の高さ方向を
貫通する測定用ピン12と第3電極パッド13とを形成
するには、たとえば予め一端に第3電極パッド13とな
るAu層を被着させたAlピンまたはCuピンを成形型
の中にセットしておき、この成形型に樹脂を注入するこ
とで各ピンの隙間を充填する方法をとることができる。
In order to form the measuring pin 12 and the third electrode pad 13 penetrating in the height direction of the frame body 11 as described above, for example, an Au layer serving as the third electrode pad 13 is previously formed at one end. A method of filling the gaps between the pins by setting the adhered Al pins or Cu pins in a molding die and injecting a resin into the molding die can be adopted.

【0015】上記第3電極パッド13と第2電極パッド
13とは、互いに対応するパッド同士が第1ボンディン
グ・ワイヤ3を用いて接続されている。なお、第1ボン
ディング・ワイヤ3と第2ボンディング・ワイヤ4と
は、たとえば絶縁性樹脂よりなる封止層5で封止されて
いる。このICパッケージは実装基板上にフェイスダウ
ン・ボンディングされるので、上記封止層5の高さがハ
ンダ・バンプ23の高さの範囲内とされることが特に重
要である。このようにして、本ICパッケージにおいて
は、測定用ピン12→第3電極パッド13→第1ボンデ
ィング・ワイヤ3→第1電極パッド2→第2ボンディン
グ・ワイヤ4→第2電極パッド22→内部配線24→ハ
ンダ・バンプ23の経路にしたがって導通がとられる。
The third electrode pad 13 and the second electrode pad 13 are connected to each other by use of a first bonding wire 3. The first bonding wires 3 and the second bonding wires 4 are sealed with a sealing layer 5 made of, for example, an insulating resin. Since this IC package is face-down bonded onto a mounting substrate, it is particularly important that the height of the sealing layer 5 be within the range of the height of the solder bumps 23. Thus, in the present IC package, the measuring pin 12 → the third electrode pad 13 → the first bonding wire 3 → the first electrode pad 2 → the second bonding wire 4 → the second electrode pad 22 → the internal wiring 24 → conduction is made along the path of the solder bumps 23.

【0016】上記ICパッケージに対して電気測定を行
うには、図3に示されるようにICパッケージの裏側II
から電気検査用プローブ31を測定用ピン12に接触さ
せる。この電気検査用プローブ31は、たとえば市販の
プローブ・カードに装備されている類のものである。こ
のように、本発明では測定用ピン12にプローブ31を
接触させた状態で、該プローブ31から様々な試験用信
号を入力することができる。つまり、ハンダ・バンプ2
3はプローブ31と一切接触される虞れがないので、バ
ンプの磨耗,損傷,脱落といった欠陥を生ずることがな
い。なお、図3ではICパッケージをフェイスダウン式
に載置した状態で電気検査用プローブ31を接触させて
いるが、フェイスアップ式に載置してこれを行っても良
い。
In order to perform the electrical measurement on the IC package, as shown in FIG.
Then, the electrical inspection probe 31 is brought into contact with the measurement pin 12. The electrical inspection probe 31 is, for example, of the type provided in a commercially available probe card. As described above, in the present invention, various test signals can be input from the probe 31 while the probe 31 is in contact with the measurement pin 12. That is, solder bump 2
Since there is no risk of the probe 3 coming into contact with the probe 31, no defect such as abrasion, damage, and dropping of the bump is generated. In FIG. 3, the electrical inspection probe 31 is brought into contact with the IC package in a state where the IC package is mounted face-down, but this may be performed by mounting the IC package in a face-up manner.

【0017】以上、本発明の実施の形態について述べた
が、本発明は上述の形態に何ら限定されるものではな
く、ICチップの構成の細部,各部材の寸法,各部材の
構成材料については適宜変更や選択が可能である。
Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and the details of the configuration of the IC chip, the dimensions of each member, and the constituent materials of each member are not limited thereto. It can be changed or selected as appropriate.

【0018】[0018]

【発明の効果】以上の説明からも明らかなように、本発
明のICパッケージは実装基板との接続に使用される電
気接点に欠陥を生ずることなく、信頼性の高い電気検査
を可能とするものである。したがって、BGA型を始め
とするあらゆる種類のCSP型ICパッケージの信頼性
と製造歩留りを高めることができる。また、実装前に良
品チップであることが証明されたチップ、すなわちKG
D (known good die) の入手が容易となり、CSPの実
用化に果たす役割は極めて大である。
As is clear from the above description, the IC package of the present invention enables highly reliable electrical inspection without causing defects in electrical contacts used for connection with a mounting substrate. It is. Therefore, the reliability and manufacturing yield of all types of CSP type IC packages including the BGA type can be improved. A chip that has been proved to be a good chip before mounting, ie, KG
D (known good die) can be easily obtained, and the role of CSP in practical use is extremely large.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明を適用したBGA型ICパッケージの一
部を破断して示す部分拡大斜視図である。
FIG. 1 is a partially enlarged perspective view showing a part of a BGA type IC package to which the present invention is applied.

【図2】図1のA−A線断面である。FIG. 2 is a sectional view taken along line AA of FIG.

【図3】図1のICパッケージの裏面側から電気検査用
プローブを接触させ、電気的検査を行っている状態を示
す模式的斜視図である。
FIG. 3 is a schematic perspective view showing a state in which an electrical inspection probe is brought into contact with the IC package of FIG.

【符号の説明】[Explanation of symbols]

1 ICパッケージ 2 第1電極パッド 3 第2ボンディング・ワイヤ 4 第1ボンディング・ワイヤ 5 封止層 6 配線パターン 11 枠体 12 測定用ピン 13 第3電極パッド 21 バンプ再配列基板 22 第2電極パッド 23 ハンダ・バンプ 24 接続孔 31 電気検査用プローブ DESCRIPTION OF SYMBOLS 1 IC package 2 1st electrode pad 3 2nd bonding wire 4 1st bonding wire 5 Sealing layer 6 Wiring pattern 11 Frame 12 Measurement pin 13 3rd electrode pad 21 Bump rearrangement board 22 2nd electrode pad 23 Solder bump 24 Connection hole 31 Electrical inspection probe

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 ICチップの素子形成面上に積層された
絶縁性の仲介層を用いて該素子形成面上の第1電極パッ
ドと電気的に接続された実装用の電気接点が再配列され
てなるICパッケージであって、 前記第1電極パッドが前記素子形成面上において前記仲
介層の積層領域外の露出面に配列され、 前記ICチップの側面が前記第1電極パッドと同数の導
電性の測定用ピンが高さ方向に貫通されてなる絶縁性の
枠体に周回され、 前記第1電極パッドとこれに対応する前記測定用ピンと
が素子形成面側で第1接続手段を用いて各々電気的に接
続されることにより、 前記素子形成面とは反対側の方向から前記枠体に露出す
る前記測定用ピンに対して電気検査用プローブを接触さ
せるようになされたICパッケージ。
1. An electrical contact for mounting electrically connected to a first electrode pad on an element forming surface using an insulating mediating layer laminated on an element forming surface of an IC chip. An IC package comprising: the first electrode pads are arranged on an exposed surface of the element forming surface outside the lamination region of the mediation layer; and the side surfaces of the IC chip have the same number of conductive members as the first electrode pads. The first electrode pad and the corresponding measurement pin are respectively wrapped around an insulating frame formed by penetrating the measurement pin in the height direction using the first connection means on the element forming surface side. An IC package which is electrically connected so that an electrical inspection probe is brought into contact with the measurement pin exposed on the frame from a direction opposite to the element formation surface.
【請求項2】 前記第1電極パッドと前記電気接点との
電気的接続は、 前記仲介層の辺部に配され該電気接点と電気的に接続さ
れた第2電極パッドと、 該第1電極パッドと該第2電極パッドとを各々電気的に
接続する第2接続手段とを用いて達成される請求項1記
載のICパッケージ。
2. An electrical connection between the first electrode pad and the electrical contact, comprising: a second electrode pad disposed on a side of the mediation layer and electrically connected to the electrical contact; 2. The IC package according to claim 1, wherein said IC package is achieved by using a second connection means for electrically connecting each of said pads and said second electrode pad.
【請求項3】 前記第1接続手段と前記第2接続手段が
共にボンディング・ワイヤを含む請求項1記載のICパ
ッケージ。
3. The IC package according to claim 1, wherein said first connection means and said second connection means both include bonding wires.
【請求項4】 前記ボンディング・ワイヤによる接続部
の近傍のみ選択的に絶縁封止材料を用いて封止されてな
る請求項3記載のICパッケージ。
4. The IC package according to claim 3, wherein only the vicinity of the connection portion by the bonding wire is selectively sealed with an insulating sealing material.
【請求項5】 前記電気接点がバンプである請求項1記
載のICパッケージ。
5. The IC package according to claim 1, wherein said electric contact is a bump.
JP30375296A 1996-10-29 1996-10-29 IC package Expired - Fee Related JP3485424B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30375296A JP3485424B2 (en) 1996-10-29 1996-10-29 IC package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30375296A JP3485424B2 (en) 1996-10-29 1996-10-29 IC package

Publications (2)

Publication Number Publication Date
JPH10135281A true JPH10135281A (en) 1998-05-22
JP3485424B2 JP3485424B2 (en) 2004-01-13

Family

ID=17924853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30375296A Expired - Fee Related JP3485424B2 (en) 1996-10-29 1996-10-29 IC package

Country Status (1)

Country Link
JP (1) JP3485424B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003032387A1 (en) * 2001-10-09 2003-04-17 Koninklijke Philips Electronics N.V. Electrical or electronic component and method of producing same
US6900654B2 (en) * 1999-05-28 2005-05-31 Bae Systems - Information & Electronic Warfare Systems Method and apparatus for evaluating a known good die using both wire bond and flip-chip interconnects

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6900654B2 (en) * 1999-05-28 2005-05-31 Bae Systems - Information & Electronic Warfare Systems Method and apparatus for evaluating a known good die using both wire bond and flip-chip interconnects
USRE43607E1 (en) * 1999-05-28 2012-08-28 Jones Farm Technology, Llc Method and apparatus for evaluating a known good die using both wire bond and flip-chip interconnects
WO2003032387A1 (en) * 2001-10-09 2003-04-17 Koninklijke Philips Electronics N.V. Electrical or electronic component and method of producing same
CN100397628C (en) * 2001-10-09 2008-06-25 Nxp股份有限公司 Electrical or electronic component and method of producing same

Also Published As

Publication number Publication date
JP3485424B2 (en) 2004-01-13

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