JPH10132957A - Micro-sensor - Google Patents
Micro-sensorInfo
- Publication number
- JPH10132957A JPH10132957A JP30370696A JP30370696A JPH10132957A JP H10132957 A JPH10132957 A JP H10132957A JP 30370696 A JP30370696 A JP 30370696A JP 30370696 A JP30370696 A JP 30370696A JP H10132957 A JPH10132957 A JP H10132957A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- sensitive
- gas
- sensitive material
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Calibration Of Command Recording Devices (AREA)
- Measuring Magnetic Variables (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリコン加工技
術、薄膜技術等を応用して作製されるマイクロセンサに
関するもので、感応物質としてはガス感応物質、温度感
応物質、磁気感応物質等があり、ガスセンサ、湿度セン
サ、温度センサ、磁気センサ等に利用されるマイクロセ
ンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microsensor manufactured by applying silicon processing technology, thin film technology, and the like. As a sensitive material, there are a gas sensitive material, a temperature sensitive material, a magnetic sensitive material, and the like. The present invention relates to a microsensor used for a gas sensor, a humidity sensor, a temperature sensor, a magnetic sensor, and the like.
【０００２】[0002]
【従来の技術】従来の技術によるマイクロセンサについ
て、図２を参照して説明する。2. Description of the Related Art A conventional microsensor will be described with reference to FIG.
【０００３】従来技術によるマイクロセンサの作製手順
は、以下の通りである。 シリコン基板１上に、例えば、スパッタ法やＣＶＤ法
等でＳｉ3Ｏ4膜等の薄膜層３を約３μｍ厚に形成する。 薄膜層３上にガス感応物質、温度感応物質、磁気感応
物質等の感応物質から成る感応部６と感応物質の電気特
性（インピーダンス、キャパシタンス、インダクタン
ス）を測定するための導電性材料からなる電極部７をス
パッタ法、ＣＶＤ法等で形成する。また、感応部６を周
囲温度より高い温度に加熱して用いる場合には、感応部
６の周辺にヒーター８を設けてヒーター８と感応部６、
及びヒーター８と電極部７の間に絶縁膜９を設けて絶縁
する。 薄膜層３に架橋部５として残す箇所を有機系のマスク
で覆い、フッ素等で薄膜層３をエッチングする。 ＫＯＨ等でシリコン基板１をエッチングし、架橋部５
となる薄膜層３の下部に空洞部２に形成して架橋構造体
を形成する。The procedure for manufacturing a microsensor according to the prior art is as follows. A thin film layer 3 such as a Si 3 O 4 film is formed on the silicon substrate 1 to a thickness of about 3 μm by, for example, a sputtering method or a CVD method. On the thin film layer 3, a sensitive portion 6 made of a sensitive material such as a gas sensitive material, a temperature sensitive material, a magnetic sensitive material, and an electrode portion made of a conductive material for measuring electrical characteristics (impedance, capacitance, inductance) of the sensitive material. 7 is formed by a sputtering method, a CVD method, or the like. When the sensitive part 6 is heated to a temperature higher than the ambient temperature and used, a heater 8 is provided around the sensitive part 6 so that the heater 8 and the sensitive part 6,
In addition, an insulating film 9 is provided between the heater 8 and the electrode unit 7 for insulation. The portion left as the cross-linking portion 5 in the thin film layer 3 is covered with an organic mask, and the thin film layer 3 is etched with fluorine or the like. Etching the silicon substrate 1 with KOH or the like,
Is formed in the cavity 2 below the thin film layer 3 to form a crosslinked structure.
【０００４】このようにして形成した架橋部５及び感応
部６は、非常に小さく加工できるため、熱容量が小さく
できる。このため、温度センサ等の場合、周囲温度の変
化に伴う感応部６の温度追従性が早いという特徴があ
る。Since the bridge portion 5 and the sensitive portion 6 formed in this way can be processed very small, the heat capacity can be reduced. For this reason, in the case of a temperature sensor or the like, there is a characteristic that the temperature following capability of the sensitive section 6 accompanying the change in the ambient temperature is fast.
【０００５】また、感応部６周囲にヒーター８を設けて
感応部６を周囲温度以上に加熱して用いる場合にも加熱
開始時から温度が安定するまでの時間が短いという特徴
がある。[0005] Also, when the heater 8 is provided around the sensitive section 6 and the sensitive section 6 is heated to a temperature higher than the ambient temperature, the time from the start of heating until the temperature is stabilized is short.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、さらに
熱容量を小さくして特性改善をするためには、ヒーター
８周辺の感応部６、絶縁膜９の熱容量が大きいという欠
点があった。However, in order to further reduce the heat capacity and improve the characteristics, there is a disadvantage that the heat capacity of the sensitive portion 6 around the heater 8 and the insulating film 9 is large.
【０００７】従って、本発明の技術的課題は、上記欠点
を解決し、架橋部の熱容量を小さくし、周囲温度の変化
に伴う感応部の温度追従性の早いマイクロセンサを提供
することである。SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a microsensor which solves the above-mentioned drawbacks, reduces the heat capacity of the cross-linking portion, and has a high sensitivity to the temperature of the sensitive portion as the ambient temperature changes.
【０００８】[0008]
【課題を解決するための手段】本発明は、シリコン基板
上に空洞部を設け、該空洞部上に架橋構造状の空中に浮
いた構造をしている単層以上の絶縁膜層からなる架橋部
が位置しており、該架橋部表面、あるいは架橋部内に抵
抗体からなるヒータと前記架橋部表面に感応膜を設けて
いるマイクロセンサにおいて、前記抵抗体からなるヒー
タ周辺の前記絶縁膜層と感応膜に通気孔を設けることを
特徴とするマイクロセンサである。SUMMARY OF THE INVENTION According to the present invention, there is provided a cross-link comprising at least one insulating film layer having a hollow structure on a silicon substrate and having a cross-linked structure floating in the air. In the microsensor in which a portion is located, a heater made of a resistor in the surface of the bridge, or a bridge in the bridge, and a sensitive film provided on the surface of the bridge, the insulating film layer around the heater made of the resistor is provided. A microsensor characterized in that a vent is provided in a sensitive film.
【０００９】[0009]
【発明の実施の形態】本発明の実施の形態のマイクロセ
ンサを図面を用いて詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A microsensor according to an embodiment of the present invention will be described in detail with reference to the drawings.
【００１０】図１は、本発明の実施の形態のマイクロセ
ンサの説明図を示す。図１（ａ）は正面図を示す。図１
（ｂ）は図１（ａ）のＡ−Ａ断面図を示す。図１（ｃ）
は図１（ａ）のヒーター部の正面図を示す。図１（ｄ）
は図１（ａ）の架橋部５の拡大図を示す。FIG. 1 is an explanatory view of a microsensor according to an embodiment of the present invention. FIG. 1A shows a front view. FIG.
FIG. 1B is a sectional view taken along line AA of FIG. FIG. 1 (c)
1 shows a front view of the heater section shown in FIG. Fig. 1 (d)
1 shows an enlarged view of the bridging portion 5 in FIG.
【００１１】本発明によるマイクロセンサの作製手順
は、従来の作製手順と同様であるが、本発明において
は、ヒーター８周辺の感応部６及び絶縁膜９に通気孔４
を設け、架橋部５全体の熱容量を小さくしたものであ
る。The manufacturing procedure of the microsensor according to the present invention is the same as the conventional manufacturing procedure. However, in the present invention, the sensitive portion 6 around the heater 8 and the insulating film 9 are provided with the ventilation holes 4.
Is provided to reduce the heat capacity of the entire bridging portion 5.
【００１２】抵抗式ガスセンサは、感応部６として酸化
すず等のガス感応物質の薄膜を用い、非加熱あるいはヒ
ーター８で加熱されたガス感応物質のガス濃度に伴う電
気抵抗変化を利用してガスを検出する。The resistive gas sensor uses a thin film of a gas-sensitive substance such as tin oxide as the sensitive section 6 and uses a thin film of a gas-sensitive substance which is not heated or heated by the heater 8 to change the gas using the electric resistance change accompanying the gas concentration. To detect.
【００１３】熱電動式ガスセンサは、感応部６として白
金等の温度感応物質の薄膜を用い、ヒーター８で温度感
応物質を加熱し、ガス濃度に伴う温度感応物質の温度の
変化を利用してガスを検出する。The thermoelectric gas sensor uses a thin film of a temperature-sensitive substance such as platinum as the sensitive section 6, heats the temperature-sensitive substance with a heater 8, and utilizes a change in the temperature of the temperature-sensitive substance caused by the gas concentration. Is detected.
【００１４】抵抗式温度センサは、感応部６として白金
等の温度感応物質の薄膜を用い、周囲温度変化に伴う温
度感応物質の抵抗変化を利用して温度を検出する。The resistance-type temperature sensor uses a thin film of a temperature-sensitive substance such as platinum as the sensitive section 6, and detects a temperature using a resistance change of the temperature-sensitive substance caused by a change in ambient temperature.
【００１５】[0015]
【発明の効果】以上説明したように、本発明によれば、
熱容量を小さくしたので温度追従性の早いマイクロセン
サが得られた。As described above, according to the present invention,
Since the heat capacity was reduced, a microsensor having a quick temperature tracking property was obtained.
【図１】本発明の実施の形態のマイクロセンサの説明
図。図１（ａ）は正面図。図１（ｂ）は図１（ａ）のＡ
−Ａ断面図。図１（ｃ）は図１（ａ）のヒーター部の正
面図。図１（ｄ）は図１（ａ）の架橋部５の拡大図。FIG. 1 is an explanatory diagram of a microsensor according to an embodiment of the present invention. FIG. 1A is a front view. FIG. 1B is a view showing A in FIG.
-A sectional drawing. FIG. 1C is a front view of the heater section shown in FIG. FIG. 1D is an enlarged view of the bridge portion 5 in FIG.
【図２】従来のマイクロセンサの説明図。図２（ａ）は
正面図。図２（ｂ）は図２（ａ）のＢ−Ｂ断面図。図２
（ｃ）は図２（ａ）のヒーター部の正面図。FIG. 2 is an explanatory diagram of a conventional microsensor. FIG. 2A is a front view. FIG. 2B is a cross-sectional view taken along the line BB of FIG. FIG.
FIG. 2C is a front view of the heater section shown in FIG.
１ シリコン基板 ２ 空洞部 ３ 薄膜層 ４ 通気孔 ５ 架橋部 ６ 感応部 ７ 電極部 ８ ヒーター ９ 絶縁膜 DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Cavity part 3 Thin film layer 4 Vent hole 5 Bridge part 6 Sensitive part 7 Electrode part 8 Heater 9 Insulating film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｇ０１Ｎ 27/12 Ｇ０１Ｎ 27/12 Ｂ Ｇ Ｇ０１Ｒ 33/06 Ｇ０１Ｒ 33/06 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification symbol FI G01N 27/12 G01N 27/12 B G G01R 33/06 G01R 33/06
Claims (1)
部上に架橋構造状の単層以上の絶縁膜層からなる架橋部
が位置しており、該架橋部表面、あるいは架橋部内に抵
抗体からなるヒーターと前記架橋部表面に感応膜を設け
ているマイクロセンサにおいて、前記抵抗体からなるヒ
ーター周辺の前記絶縁膜層と感応膜に通気孔を設けるこ
とを特徴とするマイクロセンサ。1. A cavity is provided on a silicon substrate, and a bridge comprising at least one insulating film layer of a bridge structure is located on the cavity, and a resistance is provided on the surface of the bridge or in the bridge. A microsensor provided with a heater made of a body and a sensitive film on the surface of the bridge portion, wherein a vent is provided in the insulating film layer and the sensitive film around the heater made of the resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30370696A JPH10132957A (en) | 1996-10-28 | 1996-10-28 | Micro-sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30370696A JPH10132957A (en) | 1996-10-28 | 1996-10-28 | Micro-sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10132957A true JPH10132957A (en) | 1998-05-22 |
Family
ID=17924279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30370696A Pending JPH10132957A (en) | 1996-10-28 | 1996-10-28 | Micro-sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10132957A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009079910A (en) * | 2007-09-25 | 2009-04-16 | Citizen Watch Co Ltd | Thin-film gas sensor |
| US8501101B2 (en) | 2010-12-03 | 2013-08-06 | Industrial Technology Research Institute | Gas sensor |
-
1996
- 1996-10-28 JP JP30370696A patent/JPH10132957A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009079910A (en) * | 2007-09-25 | 2009-04-16 | Citizen Watch Co Ltd | Thin-film gas sensor |
| US8501101B2 (en) | 2010-12-03 | 2013-08-06 | Industrial Technology Research Institute | Gas sensor |
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Legal Events
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|---|---|---|---|
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Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050120 |
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| A131 | Notification of reasons for refusal |
Effective date: 20050201 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
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