JPH1012541A - 露光条件測定方法 - Google Patents

露光条件測定方法

Info

Publication number
JPH1012541A
JPH1012541A JP8179879A JP17987996A JPH1012541A JP H1012541 A JPH1012541 A JP H1012541A JP 8179879 A JP8179879 A JP 8179879A JP 17987996 A JP17987996 A JP 17987996A JP H1012541 A JPH1012541 A JP H1012541A
Authority
JP
Japan
Prior art keywords
exposure
photosensitive substrate
exposure condition
pattern
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8179879A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1012541A5 (enExample
Inventor
Kazuya Ota
和哉 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8179879A priority Critical patent/JPH1012541A/ja
Publication of JPH1012541A publication Critical patent/JPH1012541A/ja
Publication of JPH1012541A5 publication Critical patent/JPH1012541A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8179879A 1996-06-20 1996-06-20 露光条件測定方法 Withdrawn JPH1012541A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8179879A JPH1012541A (ja) 1996-06-20 1996-06-20 露光条件測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8179879A JPH1012541A (ja) 1996-06-20 1996-06-20 露光条件測定方法

Publications (2)

Publication Number Publication Date
JPH1012541A true JPH1012541A (ja) 1998-01-16
JPH1012541A5 JPH1012541A5 (enExample) 2004-07-08

Family

ID=16073505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8179879A Withdrawn JPH1012541A (ja) 1996-06-20 1996-06-20 露光条件測定方法

Country Status (1)

Country Link
JP (1) JPH1012541A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114578651A (zh) * 2020-12-02 2022-06-03 株洲中车时代半导体有限公司 一种用于投影光刻最佳焦距测定的掩膜版及方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114578651A (zh) * 2020-12-02 2022-06-03 株洲中车时代半导体有限公司 一种用于投影光刻最佳焦距测定的掩膜版及方法

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Legal Events

Date Code Title Description
A977 Report on retrieval

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Effective date: 20041130

A761 Written withdrawal of application

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Effective date: 20061003