JPH10102003A - Insulation film and coating liquid for forming the same - Google Patents
Insulation film and coating liquid for forming the sameInfo
- Publication number
- JPH10102003A JPH10102003A JP26315596A JP26315596A JPH10102003A JP H10102003 A JPH10102003 A JP H10102003A JP 26315596 A JP26315596 A JP 26315596A JP 26315596 A JP26315596 A JP 26315596A JP H10102003 A JPH10102003 A JP H10102003A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- metal
- forming
- film
- coating liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、絶縁膜および絶縁
膜形成用塗布液に関するものである。さらに詳しくいえ
ば、本発明はＬＳＩ素子の層間絶縁膜として用いられる
絶縁膜および絶縁膜形成用塗布液に関するものである。The present invention relates to an insulating film and a coating liquid for forming the insulating film. More specifically, the present invention relates to an insulating film used as an interlayer insulating film of an LSI element and a coating liquid for forming an insulating film.
【０００２】[0002]
【従来の技術】集積回路の高集積化の進展はめざまし
く、ＤＲＡＭの集積密度は３年ごとに４倍の割合で増加
し、それに伴ってデバイスのデザインルールも微細化の
一途をたどり、クォータミクロンルール、集積規模にし
て２５６ＭｂのＤＲＡＭの開発が本格化しているのが現
状である。クォータミクロン以降のＬＳＩ素子では、多
層配線に関する高度な技術が必要になる。すなわち、配
線パターン上に成膜した絶縁膜は、配線形状を反映した
凹凸を有することになるが、このような段差があると、
さらにその絶縁膜上にリソグラフィで配線の微細なパタ
ーニングを行うとき、焦点が合わせきれないため精度が
落ちることになる。従って、層間絶縁膜により配線パタ
ーンの有無による段差をなくす平坦化技術が求められて
いる。2. Description of the Related Art The integration density of integrated circuits has been remarkably increasing, and the integration density of DRAMs has increased at a rate of four times every three years. At present, the development of a 256 Mb DRAM with a rule and an integration scale is in full swing. For LSI devices of quarter micron or smaller, advanced technology related to multilayer wiring is required. That is, the insulating film formed on the wiring pattern has irregularities reflecting the wiring shape, but if there is such a step,
Further, when fine patterning of wiring is performed on the insulating film by lithography, accuracy cannot be reduced because focus cannot be completely achieved. Therefore, a flattening technique for eliminating a step due to the presence or absence of a wiring pattern by an interlayer insulating film is required.
【０００３】従来、このような基板上の段差をなくす層
間絶縁膜の形成技術として、ＳｉＯ 2 中に有機基を導入
した膜をスピンオングラス（ＳＯＧ）法により形成する
方法（特公平８−３０７４号公報）が知られていた。こ
の方法は、アルキル基またはフェニル基のついたアルコ
キシシランのみを加水分解することによって膜を作製す
るものである。一般にアルコキシシランは、加水分解さ
れてシラノール（−ＳｉＯＨ）基を生成し、シラノール
基同士の脱水反応で重合反応が進む。しかし、アルコキ
シシランは反応性が低く、ＳｉＯＨ基が膜中に残りやす
い。このため、アルキル基またはフェニル基のついたア
ルコキシシランのみを加水分解して得た塗布液から形成
したシリカ系被膜は絶縁性が悪いという問題があった。
また、膜中に存在するＯＨ基のために、金属配線が酸化
により劣化するのを防ぐため、Ａｌなどの配線パターン
を施した上にプラズマＣＶＤ法によりＳｉＯ2 膜を成膜
し、配線部を湿気などから遮断した上へＳＯＧ膜の塗布
を行う必要があった。Conventionally, a layer for eliminating such a step on a substrate has been disclosed.
As a technique for forming an inter-insulating film, SiO 2 TwoIntroduce organic groups into
Formed film by spin-on-glass (SOG) method
A method (Japanese Patent Publication No. Hei 8-3074) has been known. This
The method of (1) is an alcohol with an alkyl or phenyl group.
Fabricate membrane by hydrolyzing only xysilane
Things. Generally, alkoxysilanes are hydrolyzed
To form silanol (-SiOH) groups,
The polymerization reaction proceeds by a dehydration reaction between the groups. But Alkoki
Sisilane has low reactivity and SiOH groups are likely to remain in the film
No. For this reason, alkyl or phenyl groups
Formed from coating solution obtained by hydrolyzing only alkoxysilane
The resulting silica-based coating has a problem of poor insulation.
Also, metal wiring is oxidized due to the OH group present in the film.
Wiring pattern of Al etc. to prevent deterioration due to
And then SiO 2 by plasma CVDTwoDeposit the film
Then, apply SOG film on the wiring part after shielding it from moisture etc.
Had to do.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、絶縁性に優
れ、誘電率が低く、Ａｌなどの金属配線上に直接形成で
きる絶縁膜およびその絶縁膜を形成するための塗布液を
提供するものである。SUMMARY OF THE INVENTION The present invention provides an insulating film having excellent insulating properties, a low dielectric constant, and which can be directly formed on a metal wiring such as Al, and a coating solution for forming the insulating film. It is.
【０００５】[0005]
【課題を解決するための手段】前記課題は、（１）Ｍ−
Ｏ−Ｍ結合（ＭはＢ，Ａｌ，Ｔｉ，Ｇｅ，Ｙ，Ｚｒ，Ｎ
ｂ，Ｔａの中から選ばれた少なくとも１種類以上の元
素）を有する無機ポリマー骨格中のＭの一部をＳｉ（Ｒ
1)n −基（Ｒ1 はアルキル基、ｎ＝１〜３）で置換した
絶縁膜、（２）前記（１）の絶縁膜において、Ｓｉ（Ｒ
1)n −（ｎ＝１〜３）に対するＭのモル比が０．０５以
上０．７５以下であることを特徴とする絶縁膜、（３）
（Ａ）一般式Ｒ1 4-nＳｉ（ＯＲ2)n （Ｒ1 ，Ｒ2 はアル
キル基、ｎ＝１〜３）で表されるアルキルアルコキシシ
ラン化合物の加水分解生成物と、（Ｂ）Ｂ，Ａｌ，Ｔ
ｉ，Ｇｅ，Ｙ，Ｚｒ，Ｎｂ，Ｔａのアルコキシドのうち
の少なくとも１種の金属アルコキシドの加水分解生成物
とを含む絶縁膜形成用塗布液、（４）前記（３）の塗布
液において、（Ｂ）／（Ａ）のモル比が０．０５以上
０．７５以下であることを特徴とする絶縁膜形成用塗布
液、により達成される。また、本発明は、（５）前記
（１）および（２）記載の層間絶縁膜を有する半導体装
置をも提供する。The above object is achieved by (1) M-
OM bond (M is B, Al, Ti, Ge, Y, Zr, N
a part of M in the inorganic polymer skeleton having at least one element selected from b and Ta) is replaced by Si (R
1) n - group (R 1 is an alkyl group, n = 1 to 3) with substituted insulating film, the insulating film (2) wherein (1), Si (R
1 ) An insulating film, wherein the molar ratio of M to n− (n = 1 to 3) is 0.05 or more and 0.75 or less, (3)
(A) the general formula R 1 4-n Si and (OR 2) n (R 1 , R 2 is an alkyl group, n = 1 to 3) hydrolysis products of alkyl alkoxy silane compound represented by, (B) B, Al, T
i. Ge, Y, Zr, Nb, Ta An alkoxide of at least one metal alkoxide hydrolyzate and an insulating film-forming coating solution; (4) In the coating solution of (3), This is achieved by a coating liquid for forming an insulating film, wherein the molar ratio of B) / (A) is 0.05 or more and 0.75 or less. The present invention also provides (5) a semiconductor device having the interlayer insulating film described in (1) and (2).
【０００６】[0006]
【発明の実施の形態】無機ポリマーとは、金属元素−酸
素−金属元素の結合を骨格として重合した高分子であ
る。本発明によれば、シリコンのアルコキシドに比べて
反応性の高い金属アルコキシドの加水分解生成物を含む
ことにより、ＳｉＯＨ基のＯＨを積極的に取り除くこと
ができるため、絶縁性を向上させることがでる。その理
由について詳しく述べると次のとおりである。BEST MODE FOR CARRYING OUT THE INVENTION An inorganic polymer is a polymer polymerized by using a metal element-oxygen-metal element bond as a skeleton. ADVANTAGE OF THE INVENTION According to this invention, since the OH of a SiOH group can be removed positively by including the hydrolysis product of a metal alkoxide with high reactivity compared with the alkoxide of silicon, insulation can be improved. . The reason is described in detail below.
【０００７】各種の金属アルコキシドの反応性について
は、各金属アルコキシド中の金属に対する正のパーシャ
ルチャージδ（Ｍ）で説明される（Livage et al.,“So
l-Gel Chemistry of Transition Metal Oxides”, Prog
ress in Solid State Chemistry, 18 (1988) 259-342)
。これによるとδ（Ｍ）が高いほど反応性も高くなる
のであるが、その値は、例えばＺｒ（ＯＥｔ)4では＋
０．６５、Ｔｉ（ＯＥｔ)4では＋０．６３、Ｎｂ（ＯＥ
ｔ)5では０．５３、Ｔａ（ＯＥｔ)5では＋０．４９であ
りこれらの値はＳｉ（ＯＥｔ)4の＋０．３２に対して有
意に高い。この反応性は、金属の種類を反映したもので
あり、アルコキシ基が加水分解されてＯＨ基になっても
基本的には変わらないものと考えられる。従って、アル
キル基またはフェニル基のついたアルコキシシランのみ
を加水分解して得た塗布液においては、反応性の低いＳ
ｉＯＨ基が残りやすいが、アルコキシシランがＢ，Ａ
ｌ，Ｔｉ，Ｇｅ，Ｙ，Ｚｒ，Ｎｂ，Ｔａのアルコキシド
のうち少なくとも１種の金属アルコキシドと同時に存在
している場合、加水分解された金属アルコキシド中の金
属（Ｍ）についているＯＨ基は反応性が高いためＳｉＯ
Ｈ基と反応して、Ｓｉに結合しているＯＨ基をはずすの
で、膜中に残存するＯＨ基は著しく減少する。このとき
発生する水は熱処理により簡単に膜から除去できる。こ
うしてＳｉとＭの間にＳｉ−Ｏ−Ｍという結合を形成す
ることにより、膜中のＯＨ基を大幅に低減することがで
きるため、絶縁性の高い膜ができる。The reactivity of various metal alkoxides is explained by the positive partial charge δ (M) for the metal in each metal alkoxide (Livage et al., “So
l-Gel Chemistry of Transition Metal Oxides ”, Prog
ress in Solid State Chemistry, 18 (1988) 259-342)
. According to this, the higher the δ (M), the higher the reactivity, but the value is, for example, + Zr (OEt) 4
0.65, +0.63 for Ti (OEt) 4 and Nb (OE
At t) 5 , it is 0.53, and at Ta (OEt) 5 , it is +0.49, which is significantly higher than +0.32 of Si (OEt) 4 . This reactivity reflects the type of metal, and it is considered that the reactivity is basically unchanged even when the alkoxy group is hydrolyzed to an OH group. Therefore, in a coating solution obtained by hydrolyzing only an alkoxysilane having an alkyl group or a phenyl group, S
Although the iOH group is likely to remain, the alkoxysilane is B, A
When at least one of the alkoxides of 1, Ti, Ge, Y, Zr, Nb, and Ta is present at the same time as the alkoxide, the OH group attached to the metal (M) in the hydrolyzed metal alkoxide is reactive. SiO
Since it reacts with the H group to remove the OH group bonded to Si, the OH group remaining in the film is significantly reduced. The water generated at this time can be easily removed from the film by heat treatment. By forming a bond of Si-OM between Si and M in this manner, OH groups in the film can be significantly reduced, and a film having high insulating properties can be obtained.
【０００８】本発明の絶縁膜において、−Ｓｉ（Ｒ1)n
−（ｎ＝１〜３）に対するＢ，Ａｌ，Ｔｉ，Ｇｅ，Ｙ，
Ｚｒ，Ｎｂ，Ｔａの中から選ばれる少なくとも１種類以
上の元素（Ｍ）のモル比が０．０５未満の時、金属アル
コキシドによるＳｉＯＨ基のＯＨを取り除く効果が小さ
い。この比が０．７５を超えると絶縁膜の比誘電率が高
くなる上、アルキル基の割合が低下するため膜にクラッ
クが入りやすくなる。In the insulating film of the present invention, -Si (R 1 ) n
B, Al, Ti, Ge, Y, for (n = 1 to 3)
When the molar ratio of at least one element (M) selected from Zr, Nb and Ta is less than 0.05, the effect of removing OH of the SiOH group by the metal alkoxide is small. When this ratio exceeds 0.75, the relative dielectric constant of the insulating film increases, and the ratio of the alkyl group decreases, so that the film easily cracks.
【０００９】本発明で使用するアルコキシドは特に限定
しないが、例えば、メトキシド、エトキシド、プロポキ
シド、ブトキシド等が挙げられる。また、アルコキシ基
の一部をβ−ジケトン、β−ケトエステル、アルカノー
ルアミン、アルキルアルカノールアミン、有機酸等で置
換したアルコキシド誘導体も使用できる。本発明におけ
る金属アルコキシドの加水分解では、アルコキシドに対
して１０モル倍までの水を添加して加水分解する。この
際、無機酸、有機酸あるいはそれらの両方を触媒として
使用してもよい。添加する水は、アルコール等の有機溶
媒で希釈してもよい。１０モル倍以上の水を使用すると
すぐにゲル化するために、好ましくない。The alkoxide used in the present invention is not particularly restricted but includes, for example, methoxide, ethoxide, propoxide, butoxide and the like. In addition, alkoxide derivatives in which a part of the alkoxy group is substituted by β-diketone, β-ketoester, alkanolamine, alkylalkanolamine, organic acid and the like can also be used. In the hydrolysis of the metal alkoxide in the present invention, the hydrolysis is performed by adding water up to 10 times the molar amount of the alkoxide. At this time, an inorganic acid, an organic acid or both of them may be used as a catalyst. The water to be added may be diluted with an organic solvent such as alcohol. If water is used in an amount of 10 mol times or more, gelation occurs immediately, which is not preferable.
【００１０】本発明で使用するアルキルアルコキシシラ
ンとしては、例えば、モノメチルトリメトキシシラン、
モノメチルトリエトキシシラン、モノメチルトリプロポ
キシシラン、モノメチルトリブトキシシラン、モノエチ
ルトリメトキシシラン、モノエチルトリエトキシシラ
ン、モノエチルトリプロポキシシラン、モノエチルトリ
ブトキシシラン、モノプロピルトリメトキシシラン、モ
ノプロピルトリエトキシシラン、モノプロピルトリプロ
ポキシシラン、モノプロピルトリブトキシシラン、ジメ
チルジメトキシシラン、ジメチルジエトキシシラン、ジ
メチルジプロポキシシラン、ジメチルジブトキシシラ
ン、ジエチルジメトキシシラン、ジエチルジエトキシシ
ラン、ジエチルジプロポキシシラン、ジエチルジブトキ
シシラン、ジプロピルジメトキシシラン、ジプロピルジ
エトキシシラン、ジプロピルジプロポキシシラン、ジプ
ロピルジブトキシシラン、トリメチルメトキシシラン、
トリメチルプロポキシシラン、トリエチルエトキシシラ
ン等が挙げられる。The alkylalkoxysilane used in the present invention includes, for example, monomethyltrimethoxysilane,
Monomethyltriethoxysilane, monomethyltripropoxysilane, monomethyltributoxysilane, monoethyltrimethoxysilane, monoethyltriethoxysilane, monoethyltripropoxysilane, monoethyltributoxysilane, monopropyltrimethoxysilane, monopropyltriethoxysilane , Monopropyltripropoxysilane, monopropyltributoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyldipropoxysilane, dimethyldibutoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, diethyldipropoxysilane, diethyldibutoxysilane , Dipropyldimethoxysilane, dipropyldiethoxysilane, dipropyldipropoxysilane, dipropyldibutoxysila , Trimethyl methoxy silane,
Examples include trimethylpropoxysilane and triethylethoxysilane.
【００１１】本発明のアルキルアルコキシシランの加水
分解では、アルコキシ基に対して０．５〜１０．０モル
倍の水を添加する。この際、無機酸、有機酸あるいはそ
れらの両方を触媒として使用してもよい。添加する水
は、アルコール等の有機溶媒で希釈してもよい。０．５
モル倍未満の水では、重合度が低く、熱処理の際に揮発
するために塗布できない。一方、１０．０モル倍を超え
ると、すぐにゲル化して塗布できない。In the hydrolysis of the alkylalkoxysilane of the present invention, water is added in an amount of 0.5 to 10.0 times the mole of the alkoxy group. At this time, an inorganic acid, an organic acid or both of them may be used as a catalyst. The water to be added may be diluted with an organic solvent such as alcohol. 0.5
If the amount of water is less than the molar ratio, the degree of polymerization is low, and it cannot be applied because it volatilizes during heat treatment. On the other hand, if it exceeds 10.0 mol times, it gels immediately and cannot be applied.
【００１２】加水分解においては、アルキルアルコキシ
シランおよびアルコキシドを均一に分散、溶解できる有
機溶媒が使用される。例えば、メタノール、エタノー
ル、プロパノール、ブタノール等の各種アルコール、ア
セトン、トルエン、キシレン等である。加水分解後、溶
媒、加水分解で生成したアルコール等を常圧あるいは減
圧下で留去して塗布してもよい。In the hydrolysis, an organic solvent capable of uniformly dispersing and dissolving the alkylalkoxysilane and the alkoxide is used. For example, various alcohols such as methanol, ethanol, propanol and butanol, acetone, toluene, xylene and the like. After the hydrolysis, the solvent, the alcohol generated by the hydrolysis, and the like may be distilled off under normal pressure or under reduced pressure for application.
【００１３】基板への塗布は、スプレーコート法、ディ
ップコート法、スピンコート法等で行われる。塗布後の
熱処理は、１００〜５００℃で行う。１００℃未満であ
ると、溶媒等が十分蒸発せず、固化できない。５００℃
を超えると、有機成分の分解が始まる。The coating on the substrate is performed by a spray coating method, a dip coating method, a spin coating method or the like. The heat treatment after the application is performed at 100 to 500C. If the temperature is lower than 100 ° C., the solvent or the like does not sufficiently evaporate and cannot be solidified. 500 ℃
When the temperature exceeds, decomposition of organic components starts.
【００１４】本発明による絶縁膜は、半導体装置の絶縁
膜の他、電線の被覆など各種電子部品に応用することも
できる。The insulating film according to the present invention can be applied not only to an insulating film of a semiconductor device but also to various electronic components such as a coating of an electric wire.
【００１５】[0015]
【実施例】本発明の絶縁膜を以下の実施例によって具体
的に説明する。ただし、本発明は、これらの実施例のみ
に限定されるものではない。表１に示した条件でゾルを
作製した。溶媒としてエトキシエタノールを用い、金属
アルコキシドはアセト酢酸エチルで化学改質してから使
用した。水のエトキシエタノール溶液を金属アルコキシ
ドおよびアルキルアルコキシシランを含む溶液に滴下し
て加水分解を行い塗布液を調製した。得られた塗布液を
スピンコータで成膜後、２００℃で熱処理した。作製し
た膜の比誘電率は周波数１MHz で測定した。絶縁抵抗
は、塗布液をシャーレに流し込んで厚さ約０．５mmのシ
ート状に成形し、２００℃で熱処理後、直流電圧５００
Ｖを印可して測定した。EXAMPLES The insulating film of the present invention will be specifically described with reference to the following examples. However, the present invention is not limited to only these examples. A sol was prepared under the conditions shown in Table 1. Ethoxyethanol was used as a solvent, and the metal alkoxide was chemically modified with ethyl acetoacetate before use. An ethoxyethanol solution of water was added dropwise to a solution containing a metal alkoxide and an alkylalkoxysilane for hydrolysis to prepare a coating solution. The obtained coating solution was formed into a film by a spin coater and then heat-treated at 200 ° C. The relative dielectric constant of the prepared film was measured at a frequency of 1 MHz. The insulation resistance was measured by pouring the coating solution into a Petri dish and forming a sheet having a thickness of about 0.5 mm.
V was applied and measured.
【００１６】実施例１〜６では、絶縁抵抗が１×１０15
Ωcm以上、比誘電率が４．０以下のクラックのない良好
な絶縁膜が得られた。一方、金属アルコキシドのみを含
む場合（比較例７〜９）、比誘電率が高く、膜にクラッ
クが入った。クラックのため、絶縁抵抗の測定はできな
かた。また、アルキルアルコキシシランのみを含む場合
（比較例１０〜１１）、絶縁抵抗が１．５×１０15Ωcm
以下で低かった。In Examples 1 to 6, the insulation resistance was 1 × 10 15
A good crack-free insulating film having a resistivity of Ωcm or more and a relative dielectric constant of 4.0 or less was obtained. On the other hand, when only the metal alkoxide was contained (Comparative Examples 7 to 9), the dielectric constant was high, and the film was cracked. Due to cracks, insulation resistance could not be measured. When only alkylalkoxysilane was contained (Comparative Examples 10 to 11), the insulation resistance was 1.5 × 10 15 Ωcm.
It was low below.
【００１７】[0017]
【表１】 [Table 1]
【００１８】次に、本発明に関わる絶縁膜を用いた半導
体装置の実施例を図１により説明する。まず、シリコン
基板１１上に絶縁膜１２を形成し、絶縁膜１２上に配線
１３をパターニングする。次に、３０００rpm の回転数
でスピンコート法により本発明による絶縁膜を塗布し、
７０℃で５分、１５０℃で５分、３００℃で３０分の熱
処理を行う。得られる絶縁膜の厚みは約７０００Åであ
る。この絶縁膜の全面エッチバックを行って平坦化した
絶縁膜１４とし、この上にレジスト膜１５を塗布してそ
の後の処理を行う。一方、従来の層間絶縁膜を用いた半
導体装置は、図２に示すように、シリコン基板２１上に
絶縁膜２２を形成し、その上に配線２３をパターニング
し、プラズマＣＶＤ法でＳｉＯ2 膜２４を形成後、絶縁
膜２５の形成とエッチバックによる平坦化を行い、更に
プラズマＣＶＤ法でＳｉＯ2 膜２４′を形成してから、
レジスト膜２６を塗布する。本発明によれば、吸湿性が
なく絶縁性の高い絶縁膜が得られるため、図２に示す従
来の層間絶縁膜２５を用いた半導体装置に比較して、層
間絶縁膜に含まれる水分から素子を保護するためのプラ
ズマＣＶＤ法によるＳｉＯ2 膜２４，２４′の形成が不
要となるため、製造コストの大幅な低減が期待できる。Next, an embodiment of a semiconductor device using an insulating film according to the present invention will be described with reference to FIG. First, an insulating film 12 is formed on a silicon substrate 11, and a wiring 13 is patterned on the insulating film 12. Next, an insulating film according to the present invention is applied by a spin coating method at a rotation speed of 3000 rpm,
Heat treatment is performed at 70 ° C. for 5 minutes, at 150 ° C. for 5 minutes, and at 300 ° C. for 30 minutes. The thickness of the obtained insulating film is about 7,000 °. The entire surface of the insulating film is etched back to form a flattened insulating film 14, on which a resist film 15 is applied, and then the subsequent processing is performed. On the other hand, in a conventional semiconductor device using an interlayer insulating film, as shown in FIG. 2, an insulating film 22 is formed on a silicon substrate 21, a wiring 23 is patterned thereon, and an SiO 2 film 24 is formed by plasma CVD. Is formed, an insulating film 25 is formed, planarization is performed by etch back, and a SiO 2 film 24 ′ is further formed by a plasma CVD method.
A resist film 26 is applied. According to the present invention, since an insulating film having no hygroscopicity and a high insulating property can be obtained, an element formed from moisture contained in the interlayer insulating film is compared with a semiconductor device using the conventional interlayer insulating film 25 shown in FIG. Since the formation of the SiO 2 films 24 and 24 ′ by the plasma CVD method for protecting the semiconductor device is not required, a significant reduction in the manufacturing cost can be expected.
【００１９】[0019]
【発明の効果】本発明の絶縁膜および絶縁膜形成用塗布
液によれば、絶縁抵抗が高く、しかも比誘電率が低い、
優れた絶縁膜をＡｌなどの金属配線上に直接形成するこ
とが可能である。さらに、この絶縁膜により製造プロセ
スを簡略化できるので、半導体装置製造のコストを低減
することができる。According to the insulating film and the coating liquid for forming the insulating film of the present invention, the insulation resistance is high and the relative dielectric constant is low.
An excellent insulating film can be formed directly on a metal wiring such as Al. Further, since the manufacturing process can be simplified by the insulating film, the cost of manufacturing the semiconductor device can be reduced.
【図１】本発明の半導体装置の実施例を説明する図であ
る。FIG. 1 is a diagram illustrating an embodiment of a semiconductor device of the present invention.
【図２】従来の半導体装置を説明する図である。FIG. 2 is a diagram illustrating a conventional semiconductor device.
１１，２１…シリコン基板 １２，２２…絶縁膜 １３，２３…配線 １４…本発明による絶縁膜 １５，２６…レジスト ２４…ＳｉＯ2 膜 ２５…従来の絶縁膜11, 21 ... insulated by a silicon substrate 12, 22 ... insulating film 13, 23 ... wiring 14 ... present invention film 15, 26 ... resist 24 ... SiO 2 film 25 ... conventional insulating film
フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/768 Ｈ０１Ｌ 21/90 Ｓ Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/768 H01L 21/90 S
Claims (5)
Ｇｅ，Ｙ，Ｚｒ，Ｎｂ，Ｔａの中から選ばれた少なくと
も１種類以上の元素）を有する無機ポリマー骨格中のＭ
の一部をＳｉ（Ｒ1)n −（Ｒ1 はアルキル基、ｎ＝１〜
３）で置換した絶縁膜。1. An MOM bond (M is B, Al, Ti,
At least one element selected from the group consisting of Ge, Y, Zr, Nb, and Ta).
Is a part of Si (R 1 ) n- (R 1 is an alkyl group, n = 1 to
The insulating film replaced in 3).
n −（ｎ＝１〜３）に対するＭのモル比が０．０５以上
０．７５以下であることを特徴とする絶縁膜。2. The insulating film according to claim 1, wherein Si (R 1 )
An insulating film, wherein the molar ratio of M to n− (n = 1 to 3) is 0.05 or more and 0.75 or less.
1 ，Ｒ2 はアルキル基、ｎ＝１〜３）で表されるアルキ
ルアルコキシシラン化合物の加水分解生成物と、（Ｂ）
Ｂ，Ａｌ，Ｔｉ，Ｇｅ，Ｙ，Ｚｒ，Ｎｂ，Ｔａのアルコ
キシドのうちの少なくとも１種の金属アルコキシドの加
水分解生成物とを含む絶縁膜形成用塗布液。(A) a compound represented by the general formula R 14 -n Si (OR 2 ) n (R
1 and R 2 are an alkyl group, n = 1 to 3), a hydrolysis product of an alkylalkoxysilane compound represented by (B)
A coating liquid for forming an insulating film, comprising a hydrolysis product of at least one metal alkoxide among alkoxides of B, Al, Ti, Ge, Y, Zr, Nb, and Ta.
（Ａ）のモル比が０．０５以上０．７５以下であること
を特徴とする絶縁膜形成用塗布液。4. The coating liquid according to claim 3, wherein (B) /
A coating liquid for forming an insulating film, wherein the molar ratio of (A) is from 0.05 to 0.75.
半導体装置。5. A semiconductor device having the insulating film according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26315596A JPH10102003A (en) | 1996-10-03 | 1996-10-03 | Insulation film and coating liquid for forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26315596A JPH10102003A (en) | 1996-10-03 | 1996-10-03 | Insulation film and coating liquid for forming the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10102003A true JPH10102003A (en) | 1998-04-21 |
Family
ID=17385569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26315596A Pending JPH10102003A (en) | 1996-10-03 | 1996-10-03 | Insulation film and coating liquid for forming the same |
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| Country | Link |
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