JPH0992910A - Photoconductive device and its manufacture - Google Patents
Photoconductive device and its manufactureInfo
- Publication number
- JPH0992910A JPH0992910A JP7247095A JP24709595A JPH0992910A JP H0992910 A JPH0992910 A JP H0992910A JP 7247095 A JP7247095 A JP 7247095A JP 24709595 A JP24709595 A JP 24709595A JP H0992910 A JPH0992910 A JP H0992910A
- Authority
- JP
- Japan
- Prior art keywords
- photoconductive layer
- vacuum
- photoconductive
- electrode
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000007733 ion plating Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 66
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 238000001704 evaporation Methods 0.000 abstract description 14
- 238000001771 vacuum deposition Methods 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000010409 thin film Substances 0.000 abstract description 7
- 230000002776 aggregation Effects 0.000 abstract description 6
- 238000004220 aggregation Methods 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract 2
- 239000000049 pigment Substances 0.000 description 21
- 238000007740 vapor deposition Methods 0.000 description 14
- 230000008020 evaporation Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- NYGZLYXAPMMJTE-UHFFFAOYSA-M metanil yellow Chemical group [Na+].[O-]S(=O)(=O)C1=CC=CC(N=NC=2C=CC(NC=3C=CC=CC=3)=CC=2)=C1 NYGZLYXAPMMJTE-UHFFFAOYSA-M 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229910052724 xenon Inorganic materials 0.000 description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 5
- 238000000862 absorption spectrum Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- SJHHDDDGXWOYOE-UHFFFAOYSA-N oxytitamium phthalocyanine Chemical compound [Ti+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 SJHHDDDGXWOYOE-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000001720 action spectrum Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、たとえば、測光器
や光学読み取り器等に用いられる光電導素子に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoconductive element used in, for example, a photometer or an optical reader.
【０００２】[0002]
【従来の技術】光電導素子は、光電導素子の両端に電圧
を印加しておき、この光電導素子に照射される光の強弱
によって光電導素子の抵抗が変化して光電導素子に流れ
る電流が変化する機能を有しており、この機能を利用し
て、前述した測光器においては光量の変化を電気的に検
出し、また、光学読み取り器においては、文字や図形等
を電子情報に変換するようにしている。2. Description of the Related Art In a photoconductive element, a voltage is applied to both ends of the photoconductive element, and the resistance of the photoconductive element changes depending on the intensity of the light with which the photoconductive element is irradiated. It has a function to change the light quantity.By utilizing this function, the photometer described above electrically detects the change in the amount of light, and the optical reader converts characters and figures into electronic information. I am trying to do it.
【０００３】そして、この光電導素子は、ガラスやセラ
ミックスあるいはプラスチックス等によって形成された
基板上に、ＩＴＯ（インジウム・錫酸化物）やＳｎＯ2
（酸化錫）あるいはその他の金属を真空蒸着等によって
蒸着することにより薄膜状の電極を形成し、この電極の
表面に、ＣｄＳ（硫化カドミウム）やＣｄＳｅ（セレン
化カドミウム）あるいはＰｂＳ（硫化鉛）等の無機材料
からなる光電導体を、同じく真空蒸着等によって蒸着し
て光電導層を一体に形成し、さらに、この光電導層の表
面に、前述した材料を真空蒸着によって蒸着して他方の
電極を一体に形成することによって構成される。This photoconductive element is formed by depositing ITO (indium tin oxide) or SnO 2 on a substrate formed of glass, ceramics, plastics or the like.
(Tin oxide) or other metal is deposited by vacuum deposition to form a thin film electrode, and CdS (cadmium sulfide), CdSe (cadmium selenide), PbS (lead sulfide), etc. are formed on the surface of this electrode. Similarly, the photoconductor made of the inorganic material is vapor-deposited by vacuum vapor deposition or the like to integrally form the photoconductive layer, and further, the above-mentioned material is vapor-deposited on the surface of the photoconductive layer to form the other electrode. It is configured by being integrally formed.
【０００４】一方、純度を損なうことなく薄膜を形成し
やすいことや廃棄時に環境へ与える影響が少ないこと等
の理由により、前記光電導体を無機材料から、フタロシ
アニン系顔料、ナフトシアニン系顔料、アゾ系顔料、ペ
リレン系顔料、キナクリドン系顔料、シアニン系顔料、
あるいは、メロシアニン系顔料等の有機材料からなる光
電導体へ変更することが試みられている。On the other hand, the photoconductor is made of an inorganic material such as a phthalocyanine-based pigment, a naphthocyanine-based pigment, or an azo-based pigment because of the fact that a thin film can be easily formed without impairing the purity and the environmental impact at the time of disposal is small. Pigment, perylene pigment, quinacridone pigment, cyanine pigment,
Alternatively, it has been attempted to change to a photoconductor made of an organic material such as a merocyanine pigment.
【０００５】[0005]
【発明が解決しようとする課題】ところで、前述したよ
うに、前記光電導体に有機材料を用いる場合、次のよう
な改善すべき問題点が残されている。By the way, as described above, when an organic material is used for the photoconductor, there are the following problems to be improved.
【０００６】すなわち、有機材料からなる光電導体を、
電極や基板上に真空蒸着によって光電導層を形成した場
合、蒸着後の光電導層の膜密度が低く軟質であり、ま
た、電極や基板との密着強度が低いことから、形成され
た光電導層の損傷や剥離が発生しやすく、その取り扱い
が煩雑であり、また、製品としての歩留まりが悪いとい
った問題点である。That is, a photoconductor made of an organic material is
When the photoconductive layer is formed on the electrode or substrate by vacuum vapor deposition, the film density of the photoconductive layer after vapor deposition is low and soft, and the adhesion strength with the electrode or substrate is low. There are problems that the layer is apt to be damaged or peeled off, its handling is complicated, and the yield as a product is poor.
【０００７】そして、前述した有機材料からなる光電導
体は凝集性が高く、真空蒸着時に被蒸着面において凝集
しやすいことから、緻密で平滑な薄膜の形成が困難でピ
ンホールが発生しやすく、また、前述のように膜密度が
低いことと相俟って、耐電圧特性の向上が制限されてし
まうといった問題点もある。The above-described photoconductor made of an organic material has a high cohesive property and easily agglomerates on the surface to be vapor-deposited during vacuum vapor deposition, which makes it difficult to form a dense and smooth thin film and easily causes pinholes. However, there is also a problem that the improvement of withstand voltage characteristics is limited in combination with the low film density as described above.
【０００８】一方、このような問題点を回避する一方法
として、前記光電導層を厚くすることが検討されている
が、素子の大型化につながるばかりでなく、真空蒸着時
間ひいては製造工程の長期化を招いてしまうといった新
たな問題点を惹起し、有効な手段とはなり得ていない。On the other hand, as one method of avoiding such a problem, making the photoconductive layer thick has been studied. However, this not only leads to an increase in size of the device but also the vacuum deposition time and thus the long manufacturing process. However, it is not an effective means because it brings about new problems such as inviting people to use it.
【０００９】本発明は、前述した従来の問題点に鑑みて
なされたもので、有機光電導体を用いて滑らかな表面と
緻密な組織を有し、かつ、耐電圧特性に優れた光電導素
子およびその製造方法を提供することを解決すべき課題
とする。The present invention has been made in view of the above-mentioned problems of the prior art, and is a photoconductive element having a smooth surface and a dense structure using an organic photoconductor and having an excellent withstand voltage characteristic. It is an object to be solved to provide the manufacturing method.
【００１０】[0010]
【課題を解決するための手段】本発明の請求項１に記載
の光電導素子は、前述した課題を解決するために、電極
上に、高周波イオンプレーティングによって有機光電導
体を真空蒸着して光電導層を形成し、この光電導層上に
他の電極を真空蒸着した構成としたものである。In order to solve the above-mentioned problems, the photoconductive element according to claim 1 of the present invention is a photoelectric conversion device in which an organic photoconductor is vacuum-deposited on an electrode by high frequency ion plating. A conductive layer is formed, and another electrode is vacuum-deposited on the photoconductive layer.
【００１１】また、本発明の請求項２に記載の光電導素
子の製造方法は、真空容器中に有機光電導体および電極
を設置した後に、前記有機光電導体を加熱して蒸発させ
るとともに、前記真空容器中に高周波プラズマを発生さ
せ、この高周波プラズマ中に前記有機光電導体の蒸気を
通過させてこの有機光電導体の分子をイオン化し、この
イオン化された有機光電導体の分子を、前記電極に入射
させて蒸着させることによって単層あるいは多層の光電
導層を形成し、ついで、この光電導層上に導電性金属を
蒸着して他方の電極を形成するようにしたものである。According to a second aspect of the present invention, in the method for producing a photoconductive element, after the organic photoconductor and the electrode are placed in a vacuum container, the organic photoconductor is heated to evaporate and the vacuum is applied. A high frequency plasma is generated in the container, the vapor of the organic photoconductor is passed through the high frequency plasma to ionize the molecules of the organic photoconductor, and the molecules of the ionized organic photoconductor are incident on the electrode. By vapor deposition to form a single-layer or multi-layer photoconductive layer, and then a conductive metal is deposited on this photoconductive layer to form the other electrode.
【００１２】[0012]
【発明の実施の形態】以下、図１および図２に基づき本
発明の一実施形態について説明する。図１に符号１で示
す本実施形態に係わる光電導素子は、ガラスやセラミッ
クスあるいはプラスチックス等からなる基板２上にＩＴ
ＯあるいはＳｎＯ2 からなる第１の透明電極３を真空蒸
着によって形成し、この第１の透明電極３の上面に、有
機光電導体を高周波イオンプレーティングによって蒸着
することによって光電導層４を形成し、さらに、この光
電導層４の上面に、金属、ＩＴＯあるいはＳｎＯ2 から
なる第２の透明電極５を真空蒸着によって蒸着・形成す
ることによって構成されたものである。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to FIGS. The photoconductive element according to the present embodiment shown by reference numeral 1 in FIG.
A first transparent electrode 3 made of O or SnO 2 is formed by vacuum vapor deposition, and a photoconductive layer 4 is formed on the upper surface of the first transparent electrode 3 by vapor deposition of an organic photoconductor by high frequency ion plating. Further, the second transparent electrode 5 made of metal, ITO or SnO 2 is deposited and formed on the upper surface of the photoconductive layer 4 by vacuum vapor deposition.
【００１３】図２は、このような構成を有する光電導素
子１を製造するための高周波イオンプレーティング装置
を示すもので、この高周波イオンプレーティング装置１
０は、真空容器１１と、この真空容器１１に接続されて
その内部を真空状態となす排気系１２と、この真空容器
１１の底部に設置されて光電導体Ａが載置される蒸発源
１３（図示例では一対設けられており、異なる有機光電
導体Ａの蒸着が可能な構成となっている）と、これらの
蒸発源１３と対向配置され、前記基板２が取り付けられ
るホルダー１４と、このホルダー１４と前記蒸発源１３
との間に位置させられて、これらの間の空間部に高周波
プラズマを発生させる環状の電極１５と、この電極１５
に整合器１６を介して接続された高周波電源１７と、前
記真空容器１１内に不活性ガスあるいは反応性ガスを注
入するためのガス注入系１８と、前記蒸発源１３に接続
されて、前記有機光電導体Ａを蒸発温度に加熱する蒸着
電源１９とによって構成されており、かつ、前記排気系
１２は、油拡散ポンプ２１と、この油拡散ポンプ２１に
連設された油回転ポンプ２２とによって構成されてい
る。FIG. 2 shows a high-frequency ion plating apparatus for manufacturing the photoconductive element 1 having such a structure. The high-frequency ion plating apparatus 1 is shown in FIG.
Reference numeral 0 indicates a vacuum container 11, an exhaust system 12 connected to the vacuum container 11 to bring the inside into a vacuum state, and an evaporation source 13 (which is installed at the bottom of the vacuum container 11 and on which the photoconductor A is mounted ( In the illustrated example, a pair is provided so that different organic photoconductors A can be vapor-deposited), and a holder 14 arranged to face these evaporation sources 13 and to which the substrate 2 is attached, and this holder 14 And the evaporation source 13
And an annular electrode 15 positioned between the electrode 15 and the electrode 15 for generating high-frequency plasma in the space therebetween, and the electrode 15
A high-frequency power source 17 connected to the vacuum vessel 11 via a matching unit 16, a gas injection system 18 for injecting an inert gas or a reactive gas into the vacuum container 11, and an evaporation source 13 connected to the organic source. The exhaust system 12 is composed of an evaporation power source 19 for heating the photoconductor A to an evaporation temperature, and the exhaust system 12 is composed of an oil diffusion pump 21 and an oil rotary pump 22 connected to the oil diffusion pump 21. Has been done.
【００１４】また、このように構成された前記排気系１
２は、前記真空容器１１内の圧力を、１×１０-5Ｔｏｒ
ｒまで真空引き可能な構成となされている。Further, the exhaust system 1 constructed as described above.
2 indicates the pressure inside the vacuum container 11 of 1 × 10 −5 Tor.
It is configured to be able to vacuum up to r.
【００１５】そして、本実施形態においては、前記光電
導体Ａとして、フタロシアニン系顔料、ナフトシアニン
系顔料、アゾ系顔料、ペリレン系顔料、キナクリドン系
顔料、シアニン系顔料、あるいは、メロシアニン系顔料
等の有機材料が用いられ、前記蒸発源１３に設置され
て、蒸着電源１９から供給される電力によって蒸発させ
られた後に、前記電極１５によって発生させられる高周
波プラズマＰ中を通過させられることによってイオン化
された後に、前記基板２上の第１の透明電極２に入射さ
せられることによって蒸着されて、この第１の透明電極
３上に有機材料からなる光電導層３を形成するようにな
されている。In the present embodiment, as the photoconductor A, an organic material such as a phthalocyanine pigment, a naphthocyanine pigment, an azo pigment, a perylene pigment, a quinacridone pigment, a cyanine pigment, or a merocyanine pigment is used. After a material is used, it is installed in the evaporation source 13, evaporated by the electric power supplied from the deposition power source 19, and then ionized by being passed through the high frequency plasma P generated by the electrode 15. The photoconductive layer 3 made of an organic material is formed on the first transparent electrode 3 by being deposited by being incident on the first transparent electrode 2 on the substrate 2.
【００１６】また、有機光電導体Ａの蒸着が行われる真
空容器１１は、蒸着する有機光電導体Ａの種類によって
異なるが、アルゴンガス等の不活性ガス雰囲気、あるい
は、各種の反応性ガス雰囲気に保持され、そのガス圧が
１×１０-5Ｔｏｒｒ〜１×１０-4Ｔｏｒｒの範囲に保持
され、さらに、前記高周波プラズマを発生させる電圧
は、１３．５６ＭＨｚの高周波電圧が用いられ、その電
力は１０Ｗ〜８０Ｗの範囲で設定され、特に４０Ｗ〜７
０Ｗの範囲が好適に用いられる。The vacuum chamber 11 in which the organic photoconductor A is vapor-deposited is held in an inert gas atmosphere such as argon gas or various reactive gas atmospheres, depending on the type of the organic photoconductor A to be vapor-deposited. The gas pressure is kept in the range of 1 × 10 −5 Torr to 1 × 10 −4 Torr, and the high-frequency plasma is generated by using a high-frequency voltage of 13.56 MHz, and the power is 10 W. 〜80W range, especially 40W〜7
The range of 0 W is preferably used.
【００１７】このようにして高周波イオンプレーティン
グによって形成された有機材料からなる光電導層４は、
凝集がなく滑らかで緻密な薄膜となされ、かつ、通常の
真空蒸着によって形成される光電導層に比して硬質の光
電導層４となされ、この結果、損傷や剥離が発生しにく
くかつ耐電圧特性に優れた光電導層４が得られる。The photoconductive layer 4 made of an organic material thus formed by high frequency ion plating is
A smooth and dense thin film without aggregation is formed, and a hard photoconductive layer 4 is formed as compared with a photoconductive layer formed by ordinary vacuum deposition, and as a result, damage or peeling is less likely to occur and withstand voltage is increased. The photoconductive layer 4 having excellent characteristics can be obtained.
【００１８】以下に、具体な実施例を挙げて本発明につ
いて詳述する。なお、以下の各実施例における光電導層
４の特性評価を、表面硬度、表面状態、結晶性、組成分
析、熱特性、耐電圧性、光電特性の各項目に基づいて行
った。各項目の具体的な実施条件は以下のとおりであ
る。 １ 表面硬度 形成された光電導層４の表面に、鉛筆を４５度に傾けた
状態で約１００ｇの接触圧のもとに接触させた状態と
し、この鉛筆を約０．５ｍｍ／ｓｅｃの速度で表面を移
動させて、前記光電導層４に傷を発生させる鉛筆硬度
を、この光電導層４の表面硬度とした。 ２ 表面状態 形成された光電導層４の表面に金をスパッターコート
し、その表面を走査型電子顕微鏡で観察した。 ３ 結晶性 形成された光電導層４のＸ線回折測定を行い、そのＸ線
回折特性から結晶構造を確認した。 ４ 組成分析 形成された光電導層４の分光吸収スペクトルを、波長３
００〜９００ｎｍの領域において分光光度計で測定する
とともに元素分析を行った。 ５ 熱特性 形成された光電導層４のＸ線回折測定を行った後に、こ
の光電導素子１を乾燥大気中で転移温度を超える温度ま
で徐々に加熱しつつＸ線回折測定を行い、熱処理前後に
おける結晶性の変化を観察した。 ６ 耐電圧性 暗黒状態において、得られた光電導素子１に電圧を印加
していき、空間電荷領域を過ぎて、電子雪崩領域と思わ
れる電流の急激な増加が始まったときの印加電圧を耐電
圧として測定した。The present invention will be described in detail below with reference to specific examples. The characteristics of the photoconductive layer 4 in each of the following examples were evaluated based on the items of surface hardness, surface state, crystallinity, composition analysis, thermal characteristics, withstand voltage, and photoelectric characteristics. The specific implementation conditions for each item are as follows. 1 Surface hardness A pencil was brought into contact with the surface of the formed photoconductive layer 4 under a contact pressure of about 100 g in a state of being inclined at 45 degrees, and this pencil was moved at a speed of about 0.5 mm / sec. The pencil hardness that moves the surface to cause scratches on the photoconductive layer 4 was defined as the surface hardness of the photoconductive layer 4. 2 Surface state Gold was sputter-coated on the surface of the formed photoconductive layer 4, and the surface was observed with a scanning electron microscope. 3 Crystallinity The X-ray diffraction measurement of the formed photoconductive layer 4 was performed, and the crystal structure was confirmed from the X-ray diffraction characteristics. 4 Composition analysis The spectral absorption spectrum of the formed photoconductive layer 4
Elemental analysis was performed while measuring with a spectrophotometer in the region of 00 to 900 nm. 5 Thermal characteristics After performing X-ray diffraction measurement of the formed photoconductive layer 4, X-ray diffraction measurement is performed while gradually heating the photoconductive element 1 to a temperature exceeding the transition temperature in a dry atmosphere. The change in crystallinity was observed. 6 Withstand voltage In the dark state, a voltage is applied to the obtained photoconductive element 1 to withstand the applied voltage when a sharp increase in current, which is considered to be an electron avalanche region, starts past the space charge region. It was measured as a voltage.
【００１９】７ 光電特性 基板２上に形成された光電導層４の表面に金を蒸着し、
雰囲気の影響を除くために、約２×１０-5Ｔｏｒｒのク
ライオスタット内に設置して、室温における暗電流と光
電流の測定を行い、光電流の暗電流に対する比を求めた
（以下、この比を光電導感度と称す）。ここで、光源は
５００Ｗのキセノンランプを用い、白色光は熱吸収フィ
ルターを通して照射し、単色光照射はさらにモノクロメ
ータによる射出光を用いた。7 Photoelectric Properties Gold is vapor-deposited on the surface of the photoconductive layer 4 formed on the substrate 2,
In order to eliminate the influence of the atmosphere, the device was installed in a cryostat of about 2 × 10 -5 Torr, dark current and photocurrent were measured at room temperature, and the ratio of photocurrent to dark current was obtained (hereinafter, this ratio Is called the photoconductive sensitivity). Here, a xenon lamp of 500 W was used as a light source, white light was emitted through a heat absorption filter, and monochromatic light was emitted by a monochromator.
【００２０】[0020]
実施例１ 昇華精製した銅フタロシアニン顔料を、モリブデンボー
トからなる蒸発源１３に設置し、ＩＴＯガラス上に、８
０Ｗの高周波電力を用いた高周波イオンプレーティング
により、室温で約１ｎｍ／ｓの堆積速度で、前記銅フタ
ロシアニン顔料の加熱時間を含め約３０分間真空蒸着を
行い、約２００ｎｍの膜厚の有機光電導層４を形成し
た。Example 1 A sublimated and purified copper phthalocyanine pigment was placed in an evaporation source 13 composed of a molybdenum boat, and was placed on an ITO glass.
By high-frequency ion plating using 0 W of high-frequency power, vacuum deposition was performed at room temperature at a deposition rate of about 1 nm / s for about 30 minutes including the heating time of the copper phthalocyanine pigment, and an organic photoconductive layer having a thickness of about 200 nm was formed. Layer 4 was formed.
【００２１】このようにして得られた有機光電導層４
は、表面が目視において光沢を有し、また、表面硬度の
試験結果が「Ｈ」であり十分な硬度を有することが確認
された。そして、その表面を走査型電子顕微鏡によって
１００００倍に拡大しても、微結晶粒子が全く見られな
い平滑な光電導層４であることが確認された。また、組
成分析の結果、吸収スペクトル特性において、通常の室
温で真空蒸着したα型と殆ど同じ結果が得られ、有機光
電導層４の分子が高周波電圧のエネルギーによって分解
されていないことが確認された。The organic photoconductive layer 4 thus obtained
Was visually confirmed to have gloss, and the surface hardness test result was "H", indicating that the surface had sufficient hardness. Then, it was confirmed that even if the surface was magnified 10,000 times with a scanning electron microscope, it was a smooth photoconductive layer 4 in which no microcrystalline particles were observed. In addition, as a result of composition analysis, almost the same result as the α-type vacuum-deposited at normal room temperature was obtained in the absorption spectrum characteristics, and it was confirmed that the molecules of the organic photoconductive layer 4 were not decomposed by the energy of the high frequency voltage. It was
【００２２】そして、この光電導素子１を、銅フタロシ
アニンの結晶転移温度である約２５０℃を越えて１時間
加熱した後、Ｘ線回折を行い、その結晶の変化を見たと
ころ変化が全く見られず（通常の真空蒸着によって形成
された有機伝導層は、結晶転移温度以上において針状の
結晶が成長する）、この結果、熱に対する安定度が優れ
ていることが確認された。Then, this photoconductive element 1 was heated for 1 hour above the crystal transition temperature of copper phthalocyanine, which was about 250 ° C., and then subjected to X-ray diffraction. However, it was confirmed that the organic conductive layer formed by ordinary vacuum deposition grows needle-like crystals at the crystal transition temperature or higher, and as a result, it has excellent heat stability.
【００２３】また、前記光電導素子１の耐電圧性を測定
したところ１０Ｖという結果が得られ、たとえば、通常
の真空蒸着によって形成される厚さ５μｍの有機光電導
層の耐電圧性が４〜５Ｖであることと比較して、５０倍
以上の耐電圧特性を有していることが確認された。When the withstand voltage of the photoconductive element 1 was measured, a result of 10 V was obtained. For example, the withstand voltage of an organic photoconductive layer having a thickness of 5 μm and formed by ordinary vacuum vapor deposition was 4 to 4. It was confirmed to have withstand voltage characteristics of 50 times or more as compared with 5V.
【００２４】さらに、前記光電導素子１にキセノン光を
照射して、そのときに流れる光電流と暗電流とを検出す
るとともに、光電導感度を求めたところ２００という結
果が得られ、この結果から、本実施例における有機性の
光電導素子１が、薄い膜であるにも拘わらず光電導素子
として十分に作動することが確認された。Further, when the photoconductive element 1 was irradiated with xenon light and the photocurrent and dark current flowing at that time were detected and the photoconductive sensitivity was determined, a result of 200 was obtained. From this result It was confirmed that the organic photoconductive element 1 in the present example worked sufficiently as a photoconductive element even though it was a thin film.
【００２５】[0025]
実施例２ チタニルフタロシアニン顔料を、モリブデンボートから
なる蒸発源１３に設置し、ＩＴＯガラス上に、６０Ｗの
高周波電力を用いた高周波イオンプレーティングによ
り、室温で約１ｎｍ／ｓの堆積速度で、前記チタニルフ
タロシアニン顔料の加熱時間を含め約４０分間真空蒸着
を行い、約１８０ｎｍの膜厚の有機光電導層４を形成し
た。Example 2 A titanyl phthalocyanine pigment was placed in an evaporation source 13 composed of a molybdenum boat, and the above titanyl was deposited on ITO glass at room temperature at a deposition rate of about 1 nm / s by high frequency ion plating using high frequency power of 60 W. Vacuum evaporation was performed for about 40 minutes including the heating time of the phthalocyanine pigment to form the organic photoconductive layer 4 having a thickness of about 180 nm.
【００２６】このようにして得られた有機光電導層４
は、ＩＴＯガラスとの密着強度が高く、表面が目視にお
いて光沢のある緑色を呈し、また、表面硬度の試験結果
が「Ｈ」であり十分な硬度を有することが確認された。
そして、その表面を走査型電子顕微鏡によって１０００
０倍に拡大しても、微結晶粒子が全く見られない非常に
滑らかな光電導層４であることが確認された。また、組
成分析の結果、吸収スペクトル特性において、通常の室
温で真空蒸着した場合と殆ど同じ結果が得られ、有機光
電導層４の分子が高周波電圧のエネルギーによって分解
されていないことが確認された。The organic photoconductive layer 4 thus obtained
Has a high adhesion strength with ITO glass, the surface shows a green color with a gloss on visual observation, and the surface hardness test result was "H", indicating that it has sufficient hardness.
Then, the surface thereof is measured by a scanning electron microscope to 1000
It was confirmed that the photoconductive layer 4 was very smooth with no fine crystal particles even when magnified 0 times. In addition, as a result of composition analysis, almost the same result as in the case of vacuum deposition at normal room temperature was obtained in the absorption spectrum characteristic, and it was confirmed that the molecules of the organic photoconductive layer 4 were not decomposed by the energy of the high frequency voltage. .
【００２７】そして、この光電導素子１を、チタニルフ
タロシアニンの結晶転移温度である約２３０℃を越えて
１時間加熱した後、Ｘ線回折を行い、加熱前後における
結晶の変化を見たところ変化が全く見られず（通常の真
空蒸着によって形成された有機伝導層は、結晶転移温度
以上において針状の結晶が成長する）、この結果、熱に
対する安定度が優れていることが確認された。After heating the photoconductive element 1 above the crystal transition temperature of titanyl phthalocyanine of about 230 ° C. for 1 hour, X-ray diffraction was carried out, and the change in crystal before and after heating was observed. It was not observed at all (the organic conductive layer formed by ordinary vacuum vapor deposition grows needle-like crystals above the crystal transition temperature), and as a result, it was confirmed that the stability against heat was excellent.
【００２８】また、前記光電導素子１の耐電圧性を測定
したところ１０Ｖという結果が得られ、たとえば、通常
の真空蒸着によって形成される厚さ５μｍの有機光電導
層の耐電圧性が３〜４Ｖであることと比較して、７０倍
以上の耐電圧特性を有していることが確認された。When the withstand voltage of the photoconductive element 1 was measured, a result of 10 V was obtained. For example, the withstand voltage of an organic photoconductive layer having a thickness of 5 μm and formed by ordinary vacuum vapor deposition was 3 to 3. It was confirmed to have withstand voltage characteristics 70 times or more as compared with 4V.
【００２９】さらに、前記光電導素子１にキセノン光を
照射して、そのときに流れる光電流と暗電流と検出する
とともに、光電導感度を求めたところ１５０という結果
が得られ、この結果から、本実施例における有機性の光
電導素子１が、薄膜であるにも拘わらず光電導素子とし
て十分に作動することが確認された。Further, when the photoconductive element 1 was irradiated with xenon light, the photocurrent and dark current flowing at that time were detected, and the photoconductive sensitivity was determined to be 150. From this result, It was confirmed that the organic photoconductive element 1 in the present example worked sufficiently as a photoconductive element even though it was a thin film.
【００３０】[0030]
実施例３ 強い凝集性を有するモノアゾ色素（Ｃ．Ｉ．１２３１
０）をモリブデンボートからなる蒸発源１３に設置し、
ＩＴＯガラス上に、７０Ｗの高周波電力を用いた高周波
イオンプレーティングにより、室温で約１ｎｍ／ｓの堆
積速度で、前記モノアゾ色素の加熱時間を含め約２０分
間真空蒸着を行い、約１６０ｎｍの膜厚の有機光電導層
４を形成した。Example 3 Monoazo dye (CI. 1231) having a strong aggregation property
0) is installed in the evaporation source 13 composed of a molybdenum boat,
Vacuum deposition was performed on ITO glass by high-frequency ion plating using high-frequency power of 70 W at a deposition rate of about 1 nm / s at room temperature for about 20 minutes including the heating time of the monoazo dye to give a film thickness of about 160 nm. The organic photoconductive layer 4 was formed.
【００３１】このようにして得られた有機光電導層４
は、ＩＴＯガラスとの密着強度が高く、表面が目視にお
いて光沢を有し、また、表面硬度の試験結果が「Ｈ」で
あり十分な硬度を有することが確認された。The organic photoconductive layer 4 thus obtained
Has a high adhesion strength with ITO glass, has a glossy surface visually, and has a surface hardness test result of "H", indicating that it has sufficient hardness.
【００３２】そして、通常の真空蒸着によって形成され
たモノアゾ色素からなる有機光電導層が、数μｍ前後の
微結晶で覆われて非常に荒れているのに比べて、本実施
例の光電導層４においては、表面を走査型電子顕微鏡に
よって１００００倍に拡大しても、微結晶粒子が全く見
られない平滑な光電導層であることが確認された。The organic photoconductive layer made of a monoazo dye, which is formed by ordinary vacuum vapor deposition, is very rough because it is covered with microcrystals of about several μm and is very rough. In No. 4, it was confirmed that even if the surface was magnified 10,000 times with a scanning electron microscope, it was a smooth photoconductive layer in which no microcrystalline particles were seen at all.
【００３３】また、組成分析の結果、吸収スペクトル特
性において、通常の室温で真空蒸着したモノアゾ色素と
殆ど同じ結果が得られ、有機光電導層４の分子が高周波
電圧のエネルギーによって分解されていないことが確認
された。As a result of the composition analysis, the absorption spectrum characteristics are almost the same as those of the monoazo dye which is vacuum-deposited at ordinary room temperature, and the molecules of the organic photoconductive layer 4 are not decomposed by the energy of the high frequency voltage. Was confirmed.
【００３４】一方、このモノアゾ色素は、凝集性が強
く、通常の真空蒸着法でも島状に蒸着されてしまい、ピ
ンホールの発生が避けられないが、本実施例の光電導素
子１にあっては、従来に比して数十分の一の膜厚である
にも拘わらず、１カ月放置後においても凝集が発生せ
ず、安定した光電導層４が得られ、さらに、この光電導
層４の上面に、第２の透明電極５を蒸着した構成とした
場合においても、両電極３・５に導通はなく、この点か
らも光電導層４の安定度が確認された。ここで、長期に
わたって凝集が発生しないことは、すなわち凝集の緩和
時間が非常に長いことであるから、換言すれば、熱に対
して安定であるといえる。On the other hand, this monoazo dye has a strong cohesive property and is deposited in an island shape even by a usual vacuum deposition method, and pinholes cannot be avoided. However, in the photoconductive element 1 of the present embodiment. Despite the fact that the film thickness is several tenth of that of the conventional one, no agglomeration occurs even after standing for one month, and a stable photoconductive layer 4 is obtained. Even when the second transparent electrode 5 was vapor-deposited on the upper surface of No. 4, the electrodes 3 and 5 were not electrically connected, and the stability of the photoconductive layer 4 was also confirmed from this point. Here, the fact that agglomeration does not occur over a long period of time means that the relaxation time of agglomeration is very long, and in other words, it can be said that the material is stable to heat.
【００３５】また、本実施例における光電導素子１の耐
電圧性を測定したところ８Ｖという結果が得られ、たと
えば、通常の真空蒸着によって形成される厚さ６μｍの
有機光電導層の耐電圧性が３Ｖであることと比較して、
１００倍以上の耐電圧特性を有していることが確認され
た。When the withstand voltage of the photoconductive element 1 in this example was measured, a result of 8 V was obtained. For example, the withstand voltage of an organic photoconductive layer having a thickness of 6 μm formed by ordinary vacuum deposition. Is 3V,
It was confirmed to have a withstand voltage characteristic of 100 times or more.
【００３６】さらに、前記光電導素子１にキセノン光を
照射して、そのときに流れる光電流と暗電流と検出する
とともに、光電導感度を求めたところ約５０という結果
が得られた。ここで、従来においては、前記モノアゾ色
素は通常の真空蒸着法によって蒸着した場合、光電導感
度が１．０１以下と殆どなく、光電導素子への適用は不
向きであるとされていた物質であるが、本実施例におい
て、その実用化が可能であることが知見された。Further, when the photoconductive element 1 was irradiated with xenon light and the photocurrent and dark current flowing at that time were detected and the photoconductive sensitivity was obtained, a result of about 50 was obtained. Here, in the related art, when the monoazo dye is vapor-deposited by an ordinary vacuum vapor-deposition method, the photoconductive sensitivity is almost 1.01 or less, which is a substance which is considered unsuitable for application to a photoconductive element. However, in this example, it was found that its practical application is possible.
【００３７】[0037]
実施例４ Ｐ型有機光電導体であるチタニルフタロシアニン顔料お
よびエネルギー準位構造が異なるＮ型アゾ系有機光電導
体をそれぞれ独立した蒸発源１３に設置し、ＩＴＯガラ
ス上に、チタニルフタロシアニン顔料、アゾ系有機光電
導体の順序で、６０Ｗの高周波電力を用いた高周波イオ
ンプレーティングにより、約１ｎｍ／ｓの堆積速度で、
前記両光電導体の加熱時間を含め約７０分間真空蒸着を
行い、約３５０ｎｍの膜厚の有機光電導層４を形成し
た。Example 4 A titanyl phthalocyanine pigment, which is a P-type organic photoconductor, and an N-type azo organic photoconductor, which has a different energy level structure, are installed in independent evaporation sources 13, and a titanyl phthalocyanine pigment and an azo-type organic substance are formed on ITO glass. High-frequency ion plating using 60 W of high-frequency power, in the order of photoconductors, at a deposition rate of about 1 nm / s,
Vacuum evaporation was performed for about 70 minutes including the heating time of both photoconductors to form an organic photoconductive layer 4 having a thickness of about 350 nm.
【００３８】このようにして得られた有機光電導層４
は、ＩＴＯガラスとの密着強度が高く、また、表面硬度
の試験結果が「Ｈ」であり十分な硬度を有することが確
認された。そして、表面の走査型電子顕微鏡による観察
においても、非常に滑らかな光電導層４であることが確
認された。また、このようにして得られた本実施例の光
電導素子１を２５０℃以上で１時間加熱した後に、その
加熱前後における結晶の変化を見たところ、２層構造で
ある場合においても、Ｘ線回折特性に変化が見られず、
熱に対する安定度が高いことが確認された。The organic photoconductive layer 4 thus obtained
Has a high adhesion strength with ITO glass, and has a surface hardness test result of "H", indicating that it has sufficient hardness. It was confirmed that the surface of the photoconductive layer 4 was very smooth even when the surface was observed with a scanning electron microscope. Further, when the photoconductive element 1 of the present example thus obtained was heated at 250 ° C. or higher for 1 hour and then the change in crystal before and after the heating was observed, it was confirmed that X No change was seen in the line diffraction characteristics,
It was confirmed that the stability against heat was high.
【００３９】また、本実施例における光電導素子１の耐
電圧性を測定したところ２０Ｖ以上という高い結果が得
られ、たとえば、通常の真空蒸着によって形成される厚
さ７μｍの有機光電導層の耐電圧性が５Ｖであることと
比較して、８０倍以上の耐電圧特性を有していることが
確認された。When the withstand voltage of the photoconductive element 1 in this example was measured, a high result of 20 V or more was obtained. For example, the withstand voltage of an organic photoconductive layer having a thickness of 7 μm formed by ordinary vacuum vapor deposition. It was confirmed that the withstand voltage characteristic was 80 times or more as compared with the voltage property of 5V.
【００４０】一方、それぞれの電極３・５からの光照射
による光電流アクションスペクトルから、光電流の発生
に各光電導層ばかりでなく、両光電導層の界面に形成さ
れたＰＮヘテロ接合部も大きく寄与していることが確認
された。On the other hand, from the photocurrent action spectrum due to the light irradiation from the respective electrodes 3.5, not only each photoconductive layer for the generation of photocurrent but also the PN heterojunction portion formed at the interface between both photoconductive layers is detected. It was confirmed that it contributed greatly.
【００４１】そして、前記光電導素子１にキセノン光を
照射して、そのときに流れる光電流と暗電流と検出する
とともに、光電導感度を求めたところ約５００という結
果が得られ、有機光電導素子として有効であることが確
認された。Then, the photoconductive element 1 was irradiated with xenon light, the photocurrent and the dark current flowing at that time were detected, and the photoconductive sensitivity was determined to be about 500. It was confirmed to be effective as a device.
【００４２】なお、前記各実施例において示した各構成
部材の組み合わせや諸形状あるいは寸法等は一例であっ
て、設計要求等に基づき種々変更可能である。たとえ
ば、前記各実施例においては、光電導層４を基板２によ
って補強した構造とした例について示したが、使用状態
によってはこの基板２を省略することも可能である。Note that the combinations, various shapes, dimensions, etc. of the respective constituent members shown in each of the above-mentioned embodiments are merely examples, and can be variously changed based on design requirements and the like. For example, in each of the above-described embodiments, an example in which the photoconductive layer 4 is reinforced by the substrate 2 has been shown, but the substrate 2 may be omitted depending on the usage condition.
【００４３】[0043]
【発明の効果】以上説明したように、本発明の請求項１
に係わる光電導素子は、電極上に、高周波イオンプレー
ティングによって有機光電導体を真空蒸着して光電導層
を形成し、この光電導層上に他の電極を真空蒸着してな
ることを特徴とするもので、有機光電導体を用いて光電
導層を形成するに際して、薄膜でかつ高硬度の光電導層
を形成して、その損傷や剥離の発生が抑制された光電導
素子を提供することができるとともに、表面が滑らかで
かつ緻密でピンホールのない薄膜状の有機光電導層を形
成して、耐電圧特性に優れた光電導素子を提供すること
ができる。As described above, according to the first aspect of the present invention.
The photoconductive element according to, characterized in that an organic photoconductor is vacuum-deposited on the electrode by high-frequency ion plating to form a photoconductive layer, and another electrode is vacuum-deposited on the photoconductive layer. Thus, when forming a photoconductive layer using an organic photoconductor, a thin and high-hardness photoconductive layer is formed, and it is possible to provide a photoconductive element in which the occurrence of damage or peeling is suppressed. In addition, it is possible to provide a photoconductive element having a smooth and dense surface, a thin film-shaped organic photoconductive layer having no pinholes, and excellent withstand voltage characteristics.
【００４４】また、本発明の請求項２に係わる光電導素
子の製造方法によれば、請求項１における光電導素子を
効率よくかつ確実に製造することができる。According to the method for manufacturing a photoconductive element according to the second aspect of the present invention, the photoconductive element according to the first aspect can be efficiently and reliably manufactured.
【図１】本発明の一実施形態を示すもので、光電導素子
の概略側面図である。FIG. 1 shows an embodiment of the present invention and is a schematic side view of a photoconductive element.
【図２】本発明の一実施形態を示すもので、光電導素子
の製造に用いられる高周波イオンプレーティング装置の
概略構成図である。FIG. 2 shows an embodiment of the present invention, and is a schematic configuration diagram of a high-frequency ion plating apparatus used for manufacturing a photoconductive element.
１ 光電導素子 ２ 基板 ３ 第１の透明電極（電極） ４ （有機）光電導層 ５ 第２の透明電極（他方の電極） １０ 高周波イオンプレーティング装置 １１ 真空容器 １２ 排気系 １３ 蒸発源 １４ ホルダー １９ 蒸着電源 Ａ 有機光電導体 1 Photoconductive Element 2 Substrate 3 First Transparent Electrode (Electrode) 4 (Organic) Photoconductive Layer 5 Second Transparent Electrode (Other Electrode) 10 High Frequency Ion Plating Device 11 Vacuum Container 12 Exhaust System 13 Evaporation Source 14 Holder 19 Evaporation power supply A Organic photoconductor
Claims (2)
によって有機光電導体を真空蒸着して光電導層を形成
し、この光電導層上に他の電極を真空蒸着してなること
を特徴とする光電導素子。1. A photoelectric conversion device comprising: an organic photoconductor is vacuum-deposited on an electrode by high-frequency ion plating to form a photoconductive layer, and another electrode is vacuum-deposited on the photoconductive layer. Conductor element.
設置した後に、前記有機光電導体を加熱して蒸発させる
とともに、前記真空容器中に高周波プラズマを発生さ
せ、この高周波プラズマ中に前記有機光電導体の蒸気を
通過させてこの有機光電導体の分子をイオン化し、この
イオン化された有機光電導体の分子を前記電極に入射さ
せて蒸着させることによって、単層あるいは多層の光電
導層を形成し、ついで、この光電導層上に導電性金属を
蒸着して他方の電極を形成することを特徴とする光電導
素子の製造方法。2. An organic photoconductor and an electrode are placed in a vacuum container, the organic photoconductor is heated to evaporate, and high frequency plasma is generated in the vacuum container. Ionize the molecules of the organic photoconductor by passing the vapor of the conductor, by depositing the ionized molecules of the organic photoconductor to the electrode to form a single-layer or multi-layer photoconductive layer, Next, a method for producing a photoconductive element, characterized in that a conductive metal is vapor-deposited on the photoconductive layer to form the other electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7247095A JPH0992910A (en) | 1995-09-26 | 1995-09-26 | Photoconductive device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7247095A JPH0992910A (en) | 1995-09-26 | 1995-09-26 | Photoconductive device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0992910A true JPH0992910A (en) | 1997-04-04 |
Family
ID=17158363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7247095A Pending JPH0992910A (en) | 1995-09-26 | 1995-09-26 | Photoconductive device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0992910A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007088033A (en) * | 2005-09-20 | 2007-04-05 | Fujifilm Corp | Organic photoelectric conversion device and imaging device |
-
1995
- 1995-09-26 JP JP7247095A patent/JPH0992910A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007088033A (en) * | 2005-09-20 | 2007-04-05 | Fujifilm Corp | Organic photoelectric conversion device and imaging device |
| JP4677314B2 (en) * | 2005-09-20 | 2011-04-27 | 富士フイルム株式会社 | Sensor and organic photoelectric conversion element driving method |
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