JPH0992663A - Mounting member for semiconductor element - Google Patents
Mounting member for semiconductor elementInfo
- Publication number
- JPH0992663A JPH0992663A JP24334395A JP24334395A JPH0992663A JP H0992663 A JPH0992663 A JP H0992663A JP 24334395 A JP24334395 A JP 24334395A JP 24334395 A JP24334395 A JP 24334395A JP H0992663 A JPH0992663 A JP H0992663A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- substrate
- mounting member
- thermoplastic polyimide
- polyimide resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83194—Lateral distribution of the layer connectors
Landscapes
- Die Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子を搭載
するための部材に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a member for mounting a semiconductor element.
【０００２】[0002]
【従来の技術】従来、ＩＣメーカー等で半導体素子を基
板に接着、搭載する際には、銀エポキシ樹脂を用いてい
た。即ち、図２に示すように、基板１の表面に銀エポキ
シ樹脂ペースト４ａ，４ａを点状若しくは線状にディス
ペンスし、その上に搭載すべき半導体素子３を圧着して
未硬化の銀エポキシ樹脂ペースト４ｂを半導体素子３と
基板１との間に押し広げた後、１５０℃〜２００℃で３
０分〜６０分間キュアして、硬化した銀エポキシ樹脂４
ｃにより両者を接着するようにしていた。2. Description of the Related Art Conventionally, a silver epoxy resin has been used for bonding and mounting a semiconductor element on a substrate by an IC maker or the like. That is, as shown in FIG. 2, the silver epoxy resin pastes 4a, 4a are dispensed on the surface of the substrate 1 in a dot shape or a line shape, and the semiconductor element 3 to be mounted thereon is pressure-bonded to the uncured silver epoxy resin. After the paste 4b is spread between the semiconductor element 3 and the substrate 1, the paste 4b is spread at 150 ° C. to 200 ° C.
Cured for 0 to 60 minutes and cured silver epoxy resin 4
The both were adhered by c.
【０００３】[0003]
【発明が解決しようとする課題】然しながら、そのよう
な従来方式では、銀エポキシ樹脂の硬化に３０分以上と
時間がかかること、硬化中のアウトガスにより半導体素
子表面が汚染され信頼性が低下すること、半導体素子に
欠陥がある場合、その交換ができないこと等々の不都合
があった。However, in such a conventional method, it takes 30 minutes or more to cure the silver epoxy resin, and the outgas during the curing contaminates the surface of the semiconductor element to lower the reliability. However, if the semiconductor element has a defect, it cannot be replaced, which is a problem.
【０００４】本発明は、これらの問題点を解決するため
なされたものであり、その目的とするところは、短時間
で接着可能で、信頼性に優れ、半導体素子の交換も容易
な半導体素子搭載用部材を提供することにある。The present invention has been made in order to solve these problems, and an object of the present invention is to mount a semiconductor element that can be bonded in a short time, has excellent reliability, and can be easily replaced. To provide a member for use.
【０００５】[0005]
【課題を解決するための手段】上記の目的は、基板の表
面の一部又は全面に、２５０℃以上３５０℃以下の温度
で溶融し、接着可能な熱可塑性ポリイミド樹脂をコート
して成る半導体素子搭載用部材によって達成できる。The above object is to provide a semiconductor device in which a thermoplastic polyimide resin capable of being melted at a temperature of 250 ° C. or higher and 350 ° C. or lower is coated on a part or the entire surface of a substrate to coat it. This can be achieved by the mounting member.
【０００６】上記基板としては、セラミック基板、合成
樹脂基板、金属フレーム等々、半導体素子の搭載に適し
た材質のものであれば任意のものを利用できる。As the substrate, any substrate can be used as long as it is made of a material suitable for mounting a semiconductor element, such as a ceramic substrate, a synthetic resin substrate, a metal frame and the like.
【０００７】なお、基材の表面に熱可塑性ポリイミド樹
脂を薄くコートする手段としては、スクリーン印刷、メ
タルマスク印刷、凸版印刷、凹版印刷、ディスペンス等
の手段を目的に応じて適宜選択、利用し得る。As means for thinly coating the surface of the substrate with the thermoplastic polyimide resin, means such as screen printing, metal mask printing, letterpress printing, intaglio printing, and dispensing can be appropriately selected and used according to the purpose. .
【０００８】[0008]
【発明の実施の形態】以下、図面を参照しつゝ本発明を
具体的に説明する。図１は、本発明に係る半導体素子搭
載用部材とその使用方法を示す説明図である。本発明に
係る半導体素子搭載用部材は、基板１の表面に熱可塑性
ポリイミド樹脂２を薄くコートして成るものである。基
板１は、セラミック基板、合成樹脂基板等のほか、銅や
４２アロイで作製された金属リードフレーム等々、半導
体素子の搭載に適した材質のものが使用される。熱可塑
性ポリイミド樹脂２としては、２５０℃以上３５０℃以
下の温度で溶融して接着可能な特性を有するものを用
い、これを目的に応じて基板１の表面の一部又は全面
に、スクリーン印刷、メタルマスク印刷、凸版印刷、凹
版印刷、ディスペンス等の手段によって薄くコートす
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings. FIG. 1 is an explanatory view showing a semiconductor element mounting member according to the present invention and a method of using the same. The semiconductor element mounting member according to the present invention comprises a substrate 1 and a surface on which a thermoplastic polyimide resin 2 is thinly coated. The substrate 1 is made of a material suitable for mounting a semiconductor element, such as a ceramic substrate or a synthetic resin substrate, or a metal lead frame made of copper or 42 alloy. As the thermoplastic polyimide resin 2, one having the property of being melted and capable of adhering at a temperature of 250 ° C. or higher and 350 ° C. or lower is used, and this is screen-printed on a part or the whole surface of the substrate 1 depending on the purpose. A thin coat is made by means of metal mask printing, letterpress printing, intaglio printing, dispensing, or the like.
【０００９】２５０℃以上３５０℃以下の温度で溶融可
能な熱可塑性ポリイミド樹脂を使用する理由は、２５０
℃未満で溶融するものは、半導体素子の使用時の発熱に
よって接着性能が経時的に低下するおそれがあるためで
あり、また、３５０℃を超えなければ溶融しないもの
は、半導体素子の接着操作時に半導体素子が過熱、破損
するおそれがあるためである。The reason for using a thermoplastic polyimide resin that can be melted at a temperature of 250 ° C. or higher and 350 ° C. or lower is 250
The one that melts below ℃ is because the adhesive performance may deteriorate over time due to the heat generated when the semiconductor element is used, and the one that does not melt unless the temperature exceeds 350 ° C. is used during the bonding operation of the semiconductor element. This is because the semiconductor element may be overheated or damaged.
【００１０】而して、上記半導体素子搭載用部材を使用
する場合には、熱可塑性ポリイミド樹脂２から成るコー
ト部に半導体素子３を当接せしめ、熱可塑性ポリイミド
樹脂２を２５０℃〜３５０℃に加熱、溶融して半導体素
子に付着させ、然る後これを冷却、固化させることによ
り、半導体素子３を基板１にしっかりと装着することが
できる。熱可塑性ポリイミド樹脂２を溶融させてから硬
化させるまでに要する時間は、熱可塑性ポリイミド樹脂
の種類や量、或いは基板１の熱伝導率等にもよるが、通
常１秒〜３０秒で充分である。When the semiconductor element mounting member is used, the semiconductor element 3 is brought into contact with the coating portion made of the thermoplastic polyimide resin 2, and the thermoplastic polyimide resin 2 is heated to 250 ° C to 350 ° C. The semiconductor element 3 can be firmly attached to the substrate 1 by heating, melting and adhering it to the semiconductor element, and then cooling and solidifying it. The time required from the melting of the thermoplastic polyimide resin 2 to the curing thereof depends on the type and amount of the thermoplastic polyimide resin, the thermal conductivity of the substrate 1, and the like, but 1 second to 30 seconds is usually sufficient. .
【００１１】[0011]
【発明の効果】本発明は上記の如く構成されるから、本
発明によるときは、(1) 熱可塑性ポリイミド樹脂を使用
しているため、従来の銀エポキシ樹脂に比べて極めて短
時間で半導体素子の接着が可能となる、(2) アウトガス
が無いため信頼性が高い、(2)熱可塑性ポリイミド樹脂
を使用するため、半導体素子が不良の場合には、加熱す
るだけで交換が可能である等々、多くの利点を有する半
導体素子搭載用部材を提供し得るものである。Since the present invention is configured as described above, according to the present invention, since (1) the thermoplastic polyimide resin is used, the semiconductor element can be manufactured in an extremely short time as compared with the conventional silver epoxy resin. (2) High reliability because there is no outgas, (2) Thermoplastic polyimide resin is used, so if the semiconductor element is defective, it can be replaced simply by heating. It is possible to provide a semiconductor element mounting member having many advantages.
【００１２】なお、本発明は叙上の実施例に限定される
ものでなく、本発明の目的の範囲内において上記の説明
から当業者が容易に想到し得るすべての変更実施例を包
摂するものである。It should be noted that the present invention is not limited to the above embodiments, and includes all modified embodiments which can be easily conceived by those skilled in the art from the above description within the scope of the object of the present invention. Is.
【図１】本発明に係る半導体素子搭載用部材とその使用
方法を示す説明図である。FIG. 1 is an explanatory view showing a semiconductor element mounting member according to the present invention and a method of using the member.
【図２】従来の半導体素子の装着方式を示す説明図であ
る。FIG. 2 is an explanatory diagram showing a conventional semiconductor element mounting method.
1 基板 2 熱可塑性ポリイミド樹脂 3 半導体素子 4a〜4c 銀エポキシ樹脂 1 Substrate 2 Thermoplastic polyimide resin 3 Semiconductor element 4a-4c Silver epoxy resin
Claims (4)
０℃以上３５０℃以下の温度で溶融し、接着可能な熱可
塑性ポリイミド樹脂（２）をコートして成る半導体素子
搭載用部材。1. A part or all of the surface of the substrate (1) is provided with 25
A member for mounting a semiconductor element, which is formed by coating a thermoplastic polyimide resin (2) which melts at a temperature of 0 ° C. or more and 350 ° C. or less and can be bonded.
求項１に記載の半導体素子搭載用部材。2. The member for mounting a semiconductor element according to claim 1, wherein the substrate (1) is a ceramic substrate.
項１に記載の半導体素子搭載用部材。3. The semiconductor element mounting member according to claim 1, wherein the substrate (1) is a synthetic resin substrate.
項１に記載の半導体素子搭載用部材。4. The semiconductor element mounting member according to claim 1, wherein the substrate (1) is a metal frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24334395A JPH0992663A (en) | 1995-09-21 | 1995-09-21 | Mounting member for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24334395A JPH0992663A (en) | 1995-09-21 | 1995-09-21 | Mounting member for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0992663A true JPH0992663A (en) | 1997-04-04 |
Family
ID=17102422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24334395A Pending JPH0992663A (en) | 1995-09-21 | 1995-09-21 | Mounting member for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0992663A (en) |
-
1995
- 1995-09-21 JP JP24334395A patent/JPH0992663A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6479323B1 (en) | Method for attaching a lead frame to a heat spreader/heat slug structure | |
| US5624750A (en) | Adhesive heater and method for securing an object to a surface | |
| JPH027180B2 (en) | ||
| JPH065760A (en) | Package lead for surface mountint type semiconductor device | |
| US6313533B1 (en) | Function element, substrate for mounting function element thereon, and method of connecting them to each other | |
| JPH09505444A (en) | Multi-chip electronic package module using adhesive sheet | |
| JP2002353347A (en) | Semiconductor device and method of manufacturing same | |
| CN108447840A (en) | A kind of semiconductor resistor bridge encapsulating structure and technique | |
| JPH0992663A (en) | Mounting member for semiconductor element | |
| JP3430096B2 (en) | Semiconductor device mounting method | |
| JP2000058597A (en) | Method of mounting electronic component | |
| JPH0521522A (en) | Semiconductor chip mounting method | |
| JPH02185051A (en) | Tape carrier for double-side protective coat type tab | |
| JPH066023A (en) | Electronic part mounting method | |
| JPH0367337B2 (en) | ||
| JPH11154689A (en) | Method for mounting electronic component with gold bump | |
| JP2526666B2 (en) | How to attach the film to the lead frame | |
| JP2830824B2 (en) | Mounting method and mounting structure of work with bump | |
| JPH08124931A (en) | Semiconductor device, fabrication thereof and mounting method of semiconductor chip | |
| JP2732991B2 (en) | Semiconductor device | |
| JPH0491446A (en) | Flip-chip mounting method for semiconductor element | |
| JPH08162482A (en) | Semiconductor device | |
| JPH08321505A (en) | Construction of bump and its forming method | |
| KR100585583B1 (en) | Semiconductor package and method therefor | |
| JP2001274269A (en) | Semiconductor device and its manufacturing method |